KR20250019240A - Apparatus for treating a substrate and plasma generation unit - Google Patents

Abstract

A substrate processing device is provided, comprising: a housing having a processing space; a support unit disposed inside the processing space and supporting a substrate; a gas supply unit supplying a processing gas into the processing space; and a plasma generation unit forming an induced magnetic field inside the processing space to excite the processing gas into a plasma state; wherein the plasma generation unit comprises an antenna having a plurality of segments arranged in series with respect to one another, with a segment space formed between adjacent segments; and a control body inserted into the segment space and provided such that its position is adjustable.

Description

{APPARATUS FOR TREATING A SUBSTRATE AND PLASMA GENERATION UNIT}

The present invention relates to a substrate processing device and a plasma generation unit for processing a substrate.

In order to manufacture semiconductor devices or flat panel display panels, various processes such as a deposition process, a photo process, an etching process, and a cleaning process are performed. Among these processes, the etching process includes a dry etching process and a wet etching process, and the dry etching process mainly etches the substrate by generating a plasma discharge in the etching target area of the substrate.

Among plasma etching devices used in the dry etching process, there is an inductive plasma generation device that forms a plasma field inside a chamber by applying high-frequency power to an antenna.

The antenna used in the induction plasma generator is formed in a circular ring shape and placed in the upper space of the substrate. At this time, the length of the antenna is designed to be limited to 1/4 or less of the wavelength of the electromagnetic wave generated. The reason for this is that when the length of the antenna increases to more than 1/4 of the wavelength of the electromagnetic wave, a standing wave is generated, and the magnetic field is not uniformly generated due to the standing wave, which deteriorates the plasma uniformity.

However, this limitation of the entire antenna acts as a technical obstacle in the current technology market where substrates are becoming larger in area.

Accordingly, the antenna is sometimes distributed in a parallel configuration with a number of antennas so that the number of antennas does not increase by more than 1/4 of the electromagnetic wave wavelength. However, since the structure of combining a number of antennas in a parallel configuration makes the input terminal structure of the antenna very complex, the size of the equipment increases, causing a problem of exceeding the specifications of the equipment.

The technical problem of the present invention is to provide a substrate processing device and plasma generating unit capable of controlling the uniformity of the electromagnetic field by preventing the generation of standing waves without limiting the total length of the plasma generating unit for generating an induced magnetic field when processing a substrate, thereby generating a uniform electromagnetic field throughout the entire plasma generating unit.

The technical problems to be solved by the present invention are not limited thereto, and those skilled in the art will understand that other technical problems not mentioned can be derived from the configurations used in the specification and drawings below.

In order to achieve the above technical problem, the substrate processing device of the present invention comprises: a substrate processing device, comprising: a housing having a processing space; a support unit disposed inside the processing space and supporting a substrate; a gas supply unit supplying a processing gas into the processing space; and a plasma generation unit forming an induced magnetic field inside the processing space to excite the processing gas into a plasma state; wherein the plasma generation unit comprises an antenna having a plurality of segments arranged in series with respect to one another, with a segment space formed between adjacent segments; and a control body inserted into the segment space and provided so as to be positioned adjustable.

In one embodiment, the controller may include a distance controller that controls the separation distance of the segmented space.

In one embodiment, among the segments, one of the segments connected to the segment space further includes an extension region extending in a direction in which the segment space is formed; the extension region is formed with an area smaller than a cross-section of the segment; and the distance adjusting member further includes a stacking region extending in a direction in which the extension region is formed; the stacking region can be stacked on the extension region.

In one embodiment, the combined area of the cross-section of the extended region and the cross-section of the laminated region can be provided to be equal to the area of the cross-section of the segmented body.

In one embodiment, the distance adjusting member is moveable between a first position and a second position, and when each of the first position and the second position is viewed from above, the extended region and the laminated region can at least partially overlap each other.

In one embodiment, the area where the extended region and the laminated region overlap at the first position and the area where the extended region and the laminated region overlap at the second position may be formed differently from each other.

In one embodiment, the segmented body and the distance adjusting body are formed of a conductive metal material, and the segmented body and the distance adjusting body can be formed of the same material.

In one embodiment, the control body may include an area control body positioned between the segmented spaces and rotatably provided;

According to one embodiment, one side of the segmented body connected to the segmented space and one side of the area adjusting body connected to the segmented space may be provided with different facing areas depending on the rotation angle of the area adjusting body.

In one embodiment, the capacitance of the segmented space can be varied depending on the rotation angle of the area adjusting body.

In one embodiment, the segmented body and the area adjusting body are formed of a conductive metal material, and the segmented body and the area adjusting body can be formed of the same material.

In one embodiment, the length of each of the plurality of segments may be formed to be less than or equal to 1/4 of the wavelength of the electromagnetic wave forming the induced magnetic field, and the combined length of the plurality of segments may be formed to be greater than or equal to 1/4 of the wavelength of the electromagnetic wave.

Meanwhile, another substrate processing device of the present invention for achieving the above-described technical task is a device for processing a substrate, comprising: a housing having a processing space; a support unit disposed inside the processing space and supporting a substrate; a gas supply unit supplying a processing gas into the processing space; and a plasma generation unit forming an induced magnetic field inside the processing space to excite the processing gas into a plasma state; wherein the plasma generation unit may include a plurality of segmented bodies having a segmented space formed between each of the plurality of segmented bodies; and an extension plate disposed spaced apart from each other and inserted into the segmented space.

In one embodiment, the plasma generating unit may further include an insulating plate inserted between the expansion plates and rotating between the expansion plates.

In one embodiment, the insulating plate can adjust the insulating area between the expansion plates according to the rotation angle, thereby controlling the capacitance of the expansion plates.

In one embodiment, the length of each of the plurality of segments may be formed to be less than or equal to 1/4 of the wavelength of the electromagnetic wave forming the induced magnetic field, and the combined length of the plurality of segments may be formed to be greater than or equal to 1/4 of the wavelength of the electromagnetic wave.

On the other hand, the plasma generation unit of the present invention for achieving the above-mentioned technical task is provided in a substrate processing device, and may include a plasma generation unit for forming an induced magnetic field, an antenna having a plurality of segments arranged in series with respect to each other, and a segment space formed between adjacent segments; and a control body inserted into the segment space and provided such that its position can be adjusted.

In one embodiment, the control body may include at least one of a distance control body that controls a separation distance between the segmented spaces and an area control body that is positioned between the segmented spaces and is rotatably provided.

In one embodiment, the length of each of the plurality of segments may be formed to be less than or equal to 1/4 of the wavelength of the electromagnetic wave forming the induced magnetic field, and the combined length of the plurality of segments may be formed to be greater than or equal to 1/4 of the wavelength of the electromagnetic wave.

On the other hand, another plasma generation unit of the present invention for achieving the above-mentioned technical problem is provided in a substrate processing device, and in a plasma generation unit forming an induced magnetic field, it may include: a plurality of segmented bodies each having a segmented space formed between each of the plurality of segmented bodies; a plurality of expansion plates each of which is spaced apart from each other and inserted into the segmented space; and an insulating plate inserted between the expansion plates and rotating between the expansion plates.

The present invention has the effect of preventing the generation of standing waves without limiting the total length of a plasma generating unit for generating an induced magnetic field when processing a substrate, thereby generating a uniform electromagnetic field throughout the entire plasma generating unit and controlling the uniformity of the electromagnetic field.

The effects of the present invention are not limited to the effects described above, and those skilled in the art will understand that other effects not mentioned can be derived from the configurations used in the specification and drawings below.

The various features and advantages of the non-limiting embodiments of the present disclosure will become more apparent upon review of the detailed description in conjunction with the accompanying drawings. The accompanying drawings are provided for illustrative purposes only and should not be construed as limiting the scope of the claims. The accompanying drawings are not to be considered to be drawn to scale unless expressly stated otherwise. Various dimensions in the drawings may be exaggerated for clarity.
FIG. 1 is a cross-sectional view schematically showing a substrate processing device according to one embodiment of the present invention.
Figure 2 is a partial perspective view of the plasma generation unit illustrated in Figure 1 as viewed from above.
Figure 3 is an enlarged perspective view of the plasma generation unit illustrated in Figure 2 positioned at the first position.
Figure 4 is a perspective view of the distance control body illustrated in Figure 3 moved to the second position.
Figure 5 is a perspective view of a single antenna according to a comparative example.
Figure 6 is an equivalent circuit diagram of the single antenna shown in Figure 5.
Figure 7 is a contour map of the current intensity showing the current intensity distribution when power is supplied to the plasma generation unit illustrated in Figure 5.
Figure 8 is a contour map of the induced magnetic field showing the distribution of the induced magnetic field when power is supplied to the plasma generation unit illustrated in Figure 5.
FIG. 9 is an equivalent circuit diagram of a plasma generation unit and a distance controller according to one embodiment of the present invention.
Figure 10 is a contour map of the current intensity showing the current intensity distribution when power is supplied to the plasma generation unit illustrated in Figure 9.
Figure 11 is a contour map of the induced magnetic field showing the distribution of the induced magnetic field when power is supplied to the plasma generation unit illustrated in Figure 10.
FIG. 12 is a perspective view of a plasma generation unit of a substrate processing device according to another embodiment of the present invention, viewed from a diagonal direction.
Figure 13 is an enlarged perspective view of the area control body illustrated in Figure 12.
Figure 14 is a perspective view of the area control body illustrated in Figure 13 rotated by a first angle.
Figure 15 is a perspective view of the area control body illustrated in Figure 13 rotated by a second angle.
Figure 16 is a cross-sectional view showing the contact area between the second segment and the area adjusting body shown in Figure 14.
Figure 17 is a cross-sectional view showing the contact area between the second segment and the area adjusting body shown in Figure 16.
FIG. 18 is a perspective view of a plasma generation unit of a substrate processing device according to another embodiment of the present invention, viewed from a diagonal direction.
Figure 19 is an enlarged perspective view of the insulating plate illustrated in Figure 18.
Fig. 20 is a perspective view of the insulating plate illustrated in Fig. 18 rotated by a first angle.
Fig. 21 is a perspective view of the insulating plate illustrated in Fig. 18 rotated by a second angle.
Figure 22 is a perspective view of the insulating plate illustrated in Figure 18 rotated by a third angle.
FIG. 23 is a perspective view of a plasma generation unit of a substrate processing device according to another embodiment of the present invention, viewed from a diagonal direction.

The exemplary embodiments will now be described more fully with reference to the accompanying drawings. The exemplary embodiments are provided so that this disclosure will be thorough, and will fully convey the scope thereof to those skilled in the art. In order to provide a thorough understanding of the embodiments of the present disclosure, numerous specific details are set forth, such as examples of specific components, devices, and methods. It will be apparent to those skilled in the art that the specific details need not be utilized, and that the exemplary embodiments may be implemented in many different forms and that neither should be construed as limiting the scope of the present disclosure. In some exemplary embodiments, well-known processes, well-known device structures, and well-known techniques are not described in detail.

The terminology used herein is for the purpose of describing particular exemplary embodiments only and is not intended to be limiting of the exemplary embodiments. As used herein, the singular or non-plural terms are intended to include the plural terms, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "having," and "are open-ended and thus specify the presence of the stated features, elements, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, elements, steps, operations, elements, components, and/or groups thereof. The method steps, processes, and operations herein are not necessarily to be construed as being performed in the particular order discussed or described, unless the order is otherwise specified. Additionally, additional or alternative steps may be selected.

When a component or layer is referred to as being "on," "connected," "joined," "attached," "adjacent," or "covering" another component or layer, it can be directly on, connected, coupled, attached, adjacent, or covering said other component or layer, or there may be intermediate components or layers present. Conversely, when a component is referred to as being "directly on," "directly connected," or "directly coupled to" another component or layer, it should be understood that no intermediate components or layers are present. Like reference numerals refer to like components throughout. The term "and/or" as used herein includes all combinations and subcombinations of one or more of the listed items.

Although the terms first, second, third, etc. may be used herein to describe various components, regions, layers, and/or sections, it should be understood that these components, regions, layers, and/or sections are not limited by these terms. These terms are used solely to distinguish one component, region, layer, or section from another component, region, layer, or section. Thus, a first component, a first region, a first layer, or a first section discussed below could also be referred to as a second component, a second region, a second layer, or a second section without departing from the teachings of the exemplary embodiments.

The terms "... part", "... unit", "... module", "... body", etc., used in the specification are considered to mean a unit that processes at least one function or operation when describing electronic hardware or electronic software, and at least one component, assembly of components, function, use, point, or driving element when describing a mechanical device.

Spatially relative terms (e.g., “below,” “under,” “lower,” “above,” “top,” etc.) may be used for convenience of description to describe one component or feature in relation to another component(s) or feature(s), as depicted in the drawings. It should be understood that spatially relative terms are intended to encompass other orientations of the device in use or operation, in addition to the orientation depicted in the drawings. For example, if the device in the drawings were flipped over, components described as “below” or “below” other components or features would then be oriented “above” the other components or features. Thus, the term “below” can encompass both above and below orientations. The device can be oriented differently (rotated 90 degrees, or at a different orientation), and the spatially relative descriptive phrases used herein can be interpreted accordingly.

It should be understood that when the terms "same" or "same" are used in the description of embodiments, there may be some inaccuracy. Thus, when one configuration or value is referred to as being the same as another configuration or value, it should be understood that the configuration or value is the same as the other configuration or value within a manufacturing or operating tolerance (e.g., 10%).

When the words "approximately" or "substantially" are used in this specification with respect to a numerical value, it should be understood that the numerical value includes a manufacturing or operating tolerance (e.g., 10%) of the stated value. Also, when the words "typically" and "substantially" are used with respect to a geometrical shape, it should be understood that geometrical accuracy is not required, but that latitude with respect to the shape is within the scope of the disclosure.

Unless otherwise defined, all terms (including technical and scientific terms) used in this disclosure have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments belong. In addition, terms, including terms defined in commonly used dictionaries, should be interpreted to have a meaning consistent with their meaning in the context of the relevant art, and will not be interpreted in an idealized or overly formal sense unless explicitly defined in this disclosure.

In this embodiment, a wafer is used as an example as an object to be processed. However, the technical idea of the present invention can also be applied to devices used for processing other types of substrates other than wafers as an object to be processed.

Hereinafter, embodiments of the present invention will be described with reference to the attached drawings.

FIG. 1 is a cross-sectional view schematically showing a substrate processing device according to one embodiment of the present invention. FIG. 2 is a partial perspective view of the plasma generation unit illustrated in FIG. 1 when viewed from an upper perspective. FIG. 3 is an enlarged perspective view of the plasma generation unit illustrated in FIG. 2 when positioned at a first position. FIG. 4 is a perspective view of the distance adjusting body illustrated in FIG. 3 when moved to a second position.

A substrate processing device according to one embodiment of the present invention may include a housing (10), a window unit (20), a support unit (30), a gas supply unit (40), a baffle (50), an exhaust unit (60), a power application unit (70), and a plasma generation unit (80).

The housing (10) may have a processing space (11) in which a substrate (W) is processed and an upper space (12). The processing space (11) and the upper space (12) are separated by a window unit (20) installed inside the housing (10). The housing (10) is provided with a metal material, and for example, the housing (10) may be provided with a material including aluminum. The housing (10) may be grounded.

The window unit (20) may be provided in a plate shape. The window unit (20) may seal the processing space (11). The window unit (20) may include a dielectric substance window. An opening may be formed in the window unit (20). For example, an opening may be formed in the center of the window unit (20). A gas supply nozzle (42) described below may be installed in the opening formed in the window unit (20). The gas supply nozzle installed in the window unit (20) may be provided in a detachable manner.

The support unit (30) supports the substrate (W) in the processing space (11). The support unit (30) may further include a chuck (31). In one example, the chuck (31) may be configured as a chuck or a heater chuck. When the chuck (31) is configured as an electrostatic chuck, it may generate static electricity by power applied from an external power source. At this time, the static electricity generated by the chuck (31) may fix the substrate (W) to the support unit (30). However, the configuration of the chuck (31) in the present invention is not limited to the above-described example, and it goes without saying that it may be implemented by being modified into various chuck shapes. Meanwhile, the support unit (30) may be connected to the housing (10) by a connecting member (32).

The gas supply unit (40) can supply process gas to the processing space (11). The process gas supplied to the processing space (11) by the gas supply unit (40) may include fluorine and/or hydride. However, the present invention is not limited thereto, and the type of process gas supplied to the processing space (11) by the gas supply unit (40) may be variously modified to include any known process gas.

The gas supply unit (40) may include a gas supply source (41) and a gas supply nozzle (42). The gas supply source (41) may store a process gas or supply a process gas to the gas supply nozzle (42). The gas supply nozzle (42) supplies a process gas to the processing space (11). The gas supply nozzle (42) may supply a process gas supplied from the gas supply source (41) to the processing space (11). The gas supply nozzle (42) may be installed in the window unit (20). For example, the gas supply nozzle (42) may be installed in an opening formed in the center of the window unit (20).

The baffle (50) uniformly exhausts plasma by region in the processing space (11). The baffle (50) has an annular ring shape when viewed from above. The baffle (50) may be positioned between the inner wall of the housing (10) and the chuck (31) within the processing space (11). In addition, a plurality of baffle holes (51) are formed in the baffle (50). The baffle holes (51) may be provided so as to face the vertical direction. The baffle holes (51) may be provided as holes extending from the top to the bottom of the baffle (50). The baffle holes (51) may be arranged to be spaced apart from each other along the circumferential direction of the baffle (50).

The exhaust unit (60) can exhaust process gas and impurities inside the processing space (11) to the outside. The exhaust unit (60) can exhaust impurities and particles, etc. generated during the process of processing the substrate (W), to the outside of the process chamber (500). The exhaust unit (60) can exhaust process gas supplied into the processing space (11) to the outside of the housing (10).

As an example of such an exhaust unit (60), the exhaust unit (60) may include an exhaust line (61) and a pressure reducing member (62). The exhaust line (61) may be connected to an exhaust hole (11) formed on the bottom surface of the housing (10). As an example, the exhaust line (61) may be connected to an exhaust hole (11) formed on the bottom surface of the housing (10). The exhaust line (61) may be connected to a pressure reducing member (62) that provides pressure reduction.

The pressure reducing member (62) can provide negative pressure to the processing space (11). The pressure reducing member (62) can discharge plasma, impurities, particles, etc. remaining in the processing space (11) to the outside of the housing (10). In addition, the pressure reducing member (62) can provide negative pressure to maintain the pressure of the processing space (11) at a preset pressure. The pressure reducing member (62) can be a pump. However, it is not limited thereto, and the pressure reducing member (62) can be provided in various modified forms as a known device providing negative pressure.

The power supply unit (70) may include a power source (71), a power line (72), a matching device (73), and a ground line (74).

The power source (71) generates power. The power source (71) may be a high-frequency power source. For example, the power source (71) may generate high-frequency power. The power source (71) may apply power to the plasma generation unit (80) through a power line (72) described below. The power source (71) may apply high-frequency current to the plasma generation unit (80) through the power line (72). The high-frequency current applied to the plasma generation unit (80) forms an induced magnetic field within the processing space (11), and the induced magnetic field energizes a process gas supplied into the processing space (11) to discharge plasma. At this time, the discharged plasma etches and ashes a film of the substrate (W).

The power line (72) can transmit high-frequency power generated by the power source (71) to one end of the plasma generation unit (80).

The matching device (73) can perform matching for the high-frequency power applied from the power source (71) to one end of the plasma generation unit (80). The matching device (73) is connected to the output terminal of the power source (71) and can match the output impedance and input impedance on the power source (71) side.

The ground line (74) can be connected to the other end of the plasma generation unit (80). The ground line (74) causes the current flowing from the power source (71) to the plasma generation unit (80) to flow toward the ground side.

The plasma generation unit (80) may be formed in a single loop shape spaced apart from the outer periphery of the substrate (W) at a certain interval inward when viewed from above. For example, the plasma generation unit (80) may be formed in a ring shape in which some sections are short-circuited. In addition, the plasma generation unit (80) may be formed in a form in which a circular rod or a square rod made of a conductive metal material forms a single loop as a ring-shaped segment, and a regulator is inserted into each of the segment spaces (80b). In addition, the plasma generation unit (80) has a separation space (80a) formed in some sections. In this case, one end of the plasma generation unit (80) in which the separation space (80a) is formed is electrically connected to a power line (71), and the other end of the plasma generation unit (80) in which the separation space (80a) is formed is electrically connected to a ground line (74). The plasma generation unit (80) forms an induced magnetic field inside the processing space (11) through high-frequency power input between the power line (71) and the ground line (74). At this time, the induced magnetic field energizes the process gas to form plasma.

As an example of such a plasma generating unit (80), the plasma generating unit (80) may include an antenna and a controller.

The antenna may include a first segment (81) and a second segment (82).

The first segment (81) can be formed in an arc shape. One end of the first segment (81) can be connected to a ground line (74), and the other end of the first segment (81) can be in close contact with a distance adjusting member (83).

The second segment (82) may be formed in an arc shape. One end of the second segment (82) may be in close contact with the distance adjusting member (83), and the other end of the second segment (82) may be electrically connected to the power line (72). In addition, the second segment (82) may be arranged symmetrically with the first segment (81) so as to form a circle together with the first segment (81). A segment space (80b) may be formed between the second segment (82) and the first segment (81). In this case, a distance adjusting member (83) may be inserted into the segment space (80b). In addition, a separation space (80a) as described above may be formed between the first segment (81) and the second segment (82). The separation space (80a) has a separation distance greater than that of the segment space (80b) so as not to act as a capacitor. In addition, the second segment (82) is electrically connected to the distance adjusting member (83) at one end adjacent to the first segment (81). In this case, an extension region (82a) is formed at one end of the second segment (82), and a stacked region (83a) of the distance adjusting member (83) is connected to the extension region (82a) in a stacked state. In this case, the area of the cross-section of the extension region (82a) can be formed to be smaller than that of the cross-section of the second segment (82).

The regulator may include a distance regulator (83).

The distance adjusting member (83) is roughly formed in a rod shape. Such a distance adjusting member (83) may include a laminated region (83a) laminated on an extended region (82a) of a second segment (82), and a regulating region (83b) formed by extending from the laminated region (83a) in a direction in which one end of the first segment (81) is located. Here, a segmented space (80b) is formed between the distance adjusting member (83) and the first segment (81).

In this case, the combined area of the cross-sectional area of the extended region (82a) of the second segment (82) and the cross-sectional area of the laminated region (83a) is provided to be equal to the area of the cross-sectional area of the second segment (82), thereby preventing the uniformity of the induced magnetic field from changing.

In addition, the distance adjusting member (83) is provided so that its position can be moved between the first position and the second position as shown in FIGS. 3 and 4. That is, the distance adjusting member (83) can be moved in the longitudinal direction so that its position can be adjusted. In this case, when the distance adjusting member (83) is viewed from above at each of the first position and the second position, the extension region and the laminated region at least partially overlap each other, thereby preventing the uniformity of the induced magnetic field from being changed.

In addition, the area where the extension region (82a) and the laminated region (83a) overlap at the first position and the area where the extension region (82a) and the laminated region (83a) overlap at the second position may be formed differently from each other.

In addition, the first segment (81), the second segment (82) and the distance adjusting body (83) are formed of a conductive metal material and are formed of the same material to each other, thereby preventing the uniformity of the induced magnetic field from changing.

In addition, the segment space (80b) between the distance adjusting body (83) and the first segment body (81) acts as a parasitic capacitor. In this case, the distance adjusting body (83) adjusts the distance from the first segment body (81) while being electrically connected to the second segment body (82). Therefore, the distance adjusting body (83) adjusts the separation distance of the segment space (80b) to adjust the permittivity of the parasitic capacitor, thereby controlling the size of the induced magnetic field generated from the plasma generation unit (80). In the present embodiment, the distance adjusting body (83) is configured as one, but may be configured as multiple pieces as needed, and the coupling position of the distance adjusting body (83) may be configured at any position selected within the length range of the first segment body (81) and the second segment body (82).

Below, the current intensity distribution and magnetic field distribution of the substrate processing device described above will be described in detail in comparison with a comparative example.

Fig. 5 is a perspective view of a single antenna according to a comparative example. Fig. 6 is an equivalent circuit diagram of the single antenna illustrated in Fig. 5. Fig. 7 is a contour diagram of current intensity showing the distribution of current intensity when power is supplied to the plasma generation unit illustrated in Fig. 5. Fig. 8 is a contour diagram of an induced magnetic field showing the distribution of an induced magnetic field when power is supplied to the plasma generation unit illustrated in Fig. 5.

As illustrated in FIG. 5, the single antenna (1a) according to the comparative example is in a state where the segmented space (80b) exemplified in this embodiment is not formed, and the total length is in a state where it exceeds 1/4 of the electromagnetic wave wavelength. The single antenna (1a) according to the comparative example has an electromagnetic wave frequency of 60 MHz and an electromagnetic wave wavelength of 5 m, and 1/4 of the electromagnetic wave wavelength is formed as 1.25 m. In this case, the total length of the single antenna (1a) according to the comparative example is configured as 1.5 m.

As illustrated in Fig. 6, a single antenna (1a) according to a comparative example is implemented with one inductance (L). When high-frequency power is supplied to the single antenna (1a) according to such a comparative example, as illustrated in Fig. 7, the lowest current intensity is formed in some sections of the entire length area of the single antenna (1a), and a relatively high current intensity is formed in other sections.

Accordingly, as shown in Fig. 8, when examining the distribution of the induced magnetic field of the single antenna (1a) according to the comparative example, depending on the current intensity, an induced magnetic field with a relatively lower density is formed around some sections than in other sections, and an induced magnetic field with a relatively higher density is formed around other sections than in other sections. That is, the single antenna (1a) forms an induced magnetic field that is asymmetrical on both sides with respect to the midpoint of the entire length as the standard.

Therefore, when the substrate (W) is etched using a single antenna (1a) as in the comparative example, the substrate (W) is etched unevenly because uneven plasma is formed within the processing space (11).

Meanwhile, looking at the substrate processing device according to one embodiment of the present invention, FIG. 9 is an equivalent circuit diagram of a plasma generation unit and a distance controller according to one embodiment of the present invention. FIG. 10 is a contour diagram of current intensity showing the distribution of current intensity when power is supplied to the plasma generation unit shown in FIG. 9. FIG. 11 is a contour diagram of an induced magnetic field showing the distribution of an induced magnetic field when power is supplied to the plasma generation unit shown in FIG. 10.

First, looking at Fig. 9, an equivalent circuit in which a distance adjusting member (83) is inserted between a first segment (81) and a second segment (82) can be expressed as two inductances (L) for the first segment (81) and the second segment (82), and the segment space (80b) is composed of one capacitor (C), so that two inductances (L) and one capacitor (C) can be expressed in a LC resonance form connected in series.

In this case, the plasma generation unit (80) is in a state where the length of each of the first segment (81) and the second segment (82) forming the inductance does not exceed 1/4 of the electromagnetic wave wavelength, and the total length of the first segment (81) and the second segment (82) exceeds 1/4 of the electromagnetic wave wavelength. For example, if the frequency of the electromagnetic wave is 60 MHz and the electromagnetic wave wavelength is 5 m, 1/4 of the electromagnetic wave wavelength can be formed as 1.25 m. In this case, the total length of the plasma generation unit (80) can be configured as 1.43 m, and the length of each of the first segment (81) and the second segment (82) can be configured as approximately 0.7 m.

In this state, when the power supply unit (70) supplies power to the plasma generation unit (80), the plasma generation unit (80) generates an induced magnetic field within the treatment space (11). At this time, the current flowing in the plasma generation unit (80) flows uniformly throughout the entire section, as shown in Fig. 10.

In this case, when examining the distribution of the induced magnetic field formed around the plasma generation unit (80), a symmetrical distribution is formed based on the segmented space (80b) formed at the midpoint of the entire length, as shown in Fig. 11.

Accordingly, the substrate processing device according to one embodiment of the present invention can uniformly etch the entire area of the substrate, unlike the comparative example described above, where a specific area of the substrate (W) is intensively etched, because the induced magnetic field is symmetrically generated even when the entire length of the plasma generating unit (80) exceeds 1/4 of the electromagnetic wave wavelength.

In addition, the substrate processing device according to one embodiment of the present invention is configured such that the distance adjusting body (83) is movable in the longitudinal direction while being electrically connected to the second segment (82). At this time, since the distance adjusting body (83) is configured such that it is movable in the direction in which the first segment (81) is located, the size of the induced magnetic field generated in the first segment (81) and the second segment (82) can be adjusted by adjusting the separation distance of the segment space (80b).

In this way, since the substrate processing device according to one embodiment of the present invention can vary the storage capacity of the segmented space (80b) to a size required by the specifications, the storage capacity can be controlled when designing the plasma generation unit (80), thereby adjusting the plasma uniformity to match the design specifications.

Therefore, the substrate processing device according to one embodiment of the present invention can adjust the size of the induced magnetic field according to the size of the substrate (W), and thus can adjust the etching rate according to the size of the substrate (W).

FIG. 12 is a perspective view of a plasma generation unit of a substrate processing apparatus according to another embodiment of the present invention when viewed from a diagonal direction. FIG. 13 is an enlarged perspective view of the area control body illustrated in FIG. 12. FIG. 14 is a perspective view of the area control body illustrated in FIG. 13 rotated by a first angle. FIG. 15 is a perspective view of the area control body illustrated in FIG. 13 rotated by a second angle. FIG. 16 is a cross-sectional view illustrating a contact area between the second segmented body and the area control body illustrated in FIG. 14. FIG. 17 is a cross-sectional view illustrating a contact area between the second segmented body and the area control body illustrated in FIG. 16.

A plasma generation unit (90) as shown in FIGS. 12 to 17 may include an antenna and a controller.

The antenna may include a first segment (91) and a second segment (92).

The first segment (91) and the second segment (92) are each formed in an arc shape and can be arranged symmetrically with respect to each other to form a circle in a similar manner to the above-described embodiment.

The regulator may include an area regulator (93).

The area adjusting body (93) is roughly formed in a rod shape. The area adjusting body (93) is arranged between the first segment (91) and the second segment (92). In this case, the area adjusting body (93) is separated from the first segment (91) to form a segment space (90a). Here, the area adjusting body (93) is electrically connected to the second segment (92). If necessary, the area adjusting body (93) may also be separated from the second segment (92) to form a segment space (90a). In this case, the area adjusting body (93) may be fixed in a state where the rotation angle is adjusted by a fastening member (not shown). In the present embodiment, the area adjusting body (93) is configured as one, but may be configured as a plurality of pieces if necessary, and the joining position may be configured at any position selected within the length range of the first segment (91) and the second segment (92). In this case, the first segment (91), the second segment (92) and the area adjusting body (93) are formed of a conductive metal material, and by being formed of the same material as each other, the uniformity of the induced magnetic field can be prevented from changing.

In addition, the area adjusting body (93) may be provided so that its position can be rotated, unlike the distance adjusting body (83) that moves in the longitudinal direction. In this case, the areas where one side of the first segment (91) connected to the segment space (90a) and one side of the area adjusting body (93) connected to the segment space (90a) face each other are provided differently according to the rotation angle of the area adjusting body (93), thereby controlling the capacitance of the segment space (90a), which is a parasitic capacitor. For example, as illustrated in FIGS. 14 and 16, the area adjusting body (93) may be rotated at a first angle so that the area where the first segment (91) and the area adjusting body (93) face each other is controlled to the first area (90b). In addition, as illustrated in FIGS. 15 and 17, the area adjusting body (93) can adjust the area where the first segment (91) and the area adjusting body (93) face each other to the second area (90c) by rotating its position at a second angle. In this case, the area adjusting body (93) can adjust the capacitance of the parasitic capacitor to a smaller capacity than the first area (90b) by adjusting the area where the first segment (91) and the area adjusting body (93) face each other to the second area (90c). In this way, the area adjusting body (93) can adjust the size of the induced magnetic field generated in the first segment (91) and the second segment (92) depending on the position of the rotation angle. Meanwhile, the area adjusting body (93) can be coupled to the second segment (92) by a fastening member or a bonding member, which is not illustrated.

In this way, since the substrate processing device according to another embodiment of the present invention can vary the storage capacity of the segmented space (90b) to a size required by the specifications, the storage capacity can be controlled when designing the plasma generation unit (90), thereby adjusting the plasma uniformity to match the design specifications.

Therefore, the substrate processing device according to one embodiment of the present invention can adjust the size of the induced magnetic field according to the size of the substrate (W), and thus can adjust the etching rate according to the size of the substrate (W).

Furthermore, since the plasma generation unit (90) of the substrate processing device according to another embodiment of the present invention generates an induced magnetic field symmetrically even when the total length exceeds 1/4 of the electromagnetic wave wavelength, unlike the form in which a specific area of the substrate (W) is intensively etched as in the comparative example described above, the entire area of the substrate can be uniformly etched.

FIG. 18 is a perspective view of a plasma generation unit of a substrate processing device according to another embodiment of the present invention when viewed from a diagonal direction. FIG. 19 is an enlarged perspective view of the insulating plate illustrated in FIG. 18. FIG. 20 is a perspective view of the insulating plate illustrated in FIG. 18 rotated by a first angle. FIG. 21 is a perspective view of the insulating plate illustrated in FIG. 18 rotated by a second angle. FIG. 22 is a perspective view of the insulating plate illustrated in FIG. 18 rotated by a third angle.

As illustrated in FIG. 18 and FIG. 22, a plasma generation unit (100) of a substrate processing device according to another embodiment of the present invention may include an antenna and an extension plate (103).

The antenna may include a first segment (101) and a second segment (102).

Each of the first segment (101) and the second segment (102) is formed in an arc shape and is arranged in combination with each other to form a circle. A segment space is formed between the first segment (101) and the second segment (102). Such first segment (101) and second segment (102) can be formed in a shape similar to that of the first segment and the second segment of the above-described embodiments.

The expansion plate (103) is formed in a plate shape. In addition, the expansion plate (103) is composed of a plurality of pieces. The plurality of expansion plates (103) are arranged at a predetermined interval while being horizontal to each other. Such an expansion plate (103) is electrically connected to each of the first segment (101) and the second segment (102) while being arranged between the segment spaces of the first segment (101) and the second segment (102), thereby forming a parasitic capacitor between the expansion plates (103). At this time, since the plurality of expansion plates (103) form a parasitic capacitor at each interval, the accumulation capacity of the parasitic capacitor can be adjusted depending on the number of pieces configured. Accordingly, since the substrate processing device according to another embodiment of the present invention can vary the storage capacity to a size required for the specifications by adjusting the number of expansion plates (103), the plasma uniformity can be adjusted to meet the design specifications by controlling the storage capacity when designing the plasma generation unit (90).

In addition, the plasma generation unit (100) of the substrate processing device according to another embodiment of the present invention may be formed by further including an insulating plate (104).

The insulating plate (104) may include an insulating plate (104a) and a rotating pin (104b).

The insulating plate (104a) is formed in a plate shape. In addition, the insulating plates (104a) may be composed of a plurality of pieces and arranged at a predetermined interval while being horizontal to each other. The insulating plate (104a) may be formed of an insulating material. The insulating plate (104) may control the insulation rate between the expansion plates (130) by insulating between the expansion plates (103).

The pivot pin (104b) is coupled to each of the plurality of insulating plates (104a), so that when the insulating plates (104a) rotate, the plurality of insulating plates (104a) are rotated simultaneously. Therefore, the insulating plates (104a) are coupled by the pivot pin (104b) and insulate each of the expansion plates (103) at a constant ratio when rotated, so that the capacitance of the parasitic capacitor can be uniformly adjusted according to the rotation angle. In this case, the pivot pin (104b) can be formed so that the shaft end is coupled to one corner or one side of the insulating plate (104a), so that the insulation area varies according to the rotation angle of the insulating plate (104a).

Meanwhile, the insulating plate (104) can adjust the storage capacity of the expansion plate (103) depending on the rotation angle.

For example, as illustrated in FIG. 20, when the insulating plate (104) is rotated at a first angle, the insulating area of the expansion plate (103) can be formed as the first area, thereby setting the capacitance of the expansion plates (103) to the first capacitance.

In addition, as shown in Fig. 21, when the insulating plate (104) is rotated at a second angle, the insulating area of the expansion plate (103) is formed as a second area, thereby setting the capacitance of the expansion plates (103) to the second capacitance.

In addition, as shown in Fig. 22, when the insulating plate (104) is rotated at a third angle, the insulating area of the expansion plate (103) is formed as a third area, thereby setting the capacitance of the expansion plates (103) to the third capacitance. Since the third area is a form in which the insulating plate (104) insulates between the expansion plates (103), the insulation rate is formed to be 0.

Here, the third capacitance is formed to be larger than the second capacitance because the insulation area of the insulating plate (104) is formed close to 0, and the first capacitance is formed to be smaller than the second capacitance because the insulation area of the insulating plate (104) is formed to be the largest.

In this way, the substrate processing device according to another embodiment of the present invention can vary the capacitor capacity of the dielectric to a size required by the specifications, so that the plasma uniformity can be adjusted to meet the design specifications by controlling the capacitor capacity when designing the plasma generation unit.

Meanwhile, in the case of the present embodiment, the extension plate (103) and the insulating plate (104) are configured as one, but may be configured as multiple pieces as needed, and the joining position may be configured at any position selected within the length range of the first segment (101) and the second segment (102).

FIG. 23 is a perspective view of a plasma generation unit of a substrate processing device according to another embodiment of the present invention, viewed from a diagonal direction.

As illustrated in FIG. 23, the plasma generation unit (110) of the substrate processing device according to another embodiment of the present invention may be configured such that the plasma generation units (100) illustrated in FIG. 18 are configured to be connected in parallel to each other, and the segments constituting the antenna are configured such that they do not overlap each other on the same plane.

In this way, the plasma generation unit (110) of the substrate processing device according to another embodiment of the present invention can be configured in a parallel configuration according to the required specifications in a state where a standing wave is not formed as described above, thereby controlling the shape of the induced magnetic field in various forms.

As seen in these examples, the above-described plasma generating units (80, 90) may be configured in multiples and arranged in parallel with each other, but the segments forming the antenna may be arranged so as not to overlap each other on the same plane. When the plasma generating units are configured in parallel with each other in this way, the current flowing through the antenna can be increased to form a high plasma density.

That is, it should be understood that exemplary embodiments have been disclosed herein and that other variations are possible. Individual features or characteristics of a particular embodiment are generally not limited to that particular embodiment, but, where applicable, may be used interchangeably and in selected embodiments, even if not specifically illustrated or described. Such variations should not be considered as a departure from the spirit and scope of the present disclosure, and all such variations that would be obvious to one of ordinary skill in the art are intended to be included within the scope of the following claims.

10: Housing 20: Window Unit
30: Support unit 40: Gas supply unit
50 : Baffle 60 : Exhaust unit
70: Power application unit
80, 90, 100, 110: Plasma generating unit

Claims (20)

In a device for processing a substrate,
A housing having a processing space;
A support unit positioned inside the above processing space and supporting the substrate;
A gas supply unit for supplying process gas into the above processing space; and
A plasma generating unit that forms an induced magnetic field within the processing space to excite the process gas into a plasma state;
The above plasma generating unit,
An antenna having a plurality of segments arranged in series with respect to each other, with a segment space formed between adjacent segments; and
A substrate processing device, comprising: a regulator inserted into the above segmented space and provided so as to be positioned controllably;
In the first paragraph,
A substrate processing device, wherein the above-mentioned control body comprises a distance control body that controls the separation distance of the segmented space.
In the second paragraph,
Among the above segments, one of the segments connected to the segment space further includes an extension region extending in the direction in which the segment space is formed;
The above extension region is formed with an area smaller than the cross-section of the segment,
The distance control body further includes a laminated region extending in the direction in which the extension region is formed;
A substrate processing device in which the above-mentioned laminated region is laminated to the above-mentioned extended region.
In the third paragraph,
A substrate processing device, wherein the combined area of the cross-section of the extended region and the cross-section of the laminated region is provided equal to the area of the cross-section of the segmented body.
In the third paragraph,
The above distance adjusting body is movable between a first position and a second position,
A substrate processing device, wherein when each of the first position and the second position is viewed from above, the extension region and the laminated region at least partially overlap each other.
In paragraph 5,
A substrate processing device, wherein the area where the extension region and the laminated region overlap at the first position and the area where the extension region and the laminated region overlap at the second position are formed differently from each other.
In the second paragraph,
The above-mentioned segment and the above-mentioned distance adjusting body are formed of a conductive metal material,
A substrate processing device, wherein the above-mentioned dividing body and the above-mentioned distance adjusting body are formed of the same material.
In the first paragraph,
A substrate processing device, comprising: an area adjusting body positioned between the segmented spaces and rotatably provided;
In Article 8,
A substrate processing device, wherein one side of a segmented body connected to the segmented space and one side of the area adjusting body connected to the segmented space have different facing areas depending on the rotation angle of the area adjusting body.
In Article 9,
A substrate processing device, wherein the capacitance of the segmented space varies depending on the rotation angle of the area adjusting body.
In Article 8,
The above-mentioned segmented body and the above-mentioned area adjusting body are formed of a conductive metal material,
A substrate processing device, wherein the above-mentioned dividing body and the above-mentioned area adjusting body are formed of the same material.
In the first paragraph,
The length of each of the above plurality of segments is formed to be less than 1/4 of the wavelength of the electromagnetic wave forming the induced magnetic field,
A substrate processing device, wherein the combined length of the above plurality of segments is formed to be at least 1/4 of the wavelength of the electromagnetic wave.
In a device for processing a substrate,
A housing having a processing space;
A support unit positioned inside the above processing space and supporting the substrate;
A gas supply unit for supplying process gas into the above processing space; and
A plasma generating unit that forms an induced magnetic field within the processing space to excite the process gas into a plasma state;
The above plasma generating unit,
A segmented body consisting of a plurality of pieces, each of which has a segmented space formed between them; and
A substrate processing device comprising: an extension plate comprising a plurality of extension plates spaced apart from each other and inserted into the segmented space;
In Article 13,
The above plasma generating unit,
A substrate processing device further comprising an insulating plate inserted between the expansion plates and rotating between the expansion plates.
In Article 14,
A substrate processing device in which the insulating plate adjusts the insulating area between the expansion plates according to the rotation angle, thereby controlling the storage capacity of the expansion plates.
In Article 13,
The length of each of the above plurality of segments is formed to be less than 1/4 of the wavelength of the electromagnetic wave forming the induced magnetic field,
A substrate processing device, wherein the combined length of the above plurality of segments is formed to be at least 1/4 of the wavelength of the electromagnetic wave.
In a plasma generating unit provided to a substrate processing device and forming an induced magnetic field,
An antenna having a plurality of segments arranged in series with respect to each other, with a segment space formed between adjacent segments; and
A plasma generation unit, comprising a regulator inserted into the above segmented space and having its position adjustable.
In Article 17,
The above regulator is,
A plasma generation unit comprising at least one of a distance adjusting body for adjusting a separation distance between the segmented spaces and an area adjusting body positioned between the segmented spaces and rotatably provided.
In Article 17,
The length of each of the above plurality of segments is formed to be less than 1/4 of the wavelength of the electromagnetic wave forming the induced magnetic field,
A substrate processing device, wherein the combined length of the above plurality of segments is formed to be at least 1/4 of the wavelength of the electromagnetic wave.
In a plasma generating unit provided to a substrate processing device and forming an induced magnetic field,
A segmented body composed of a plurality of pieces, with a segmental space formed between each of the pieces;
An extension plate composed of a plurality of pieces, spaced apart from each other and inserted into said segmented space; and,
A plasma generation unit, comprising an insulating plate inserted between the expansion plates and rotating between the expansion plates.

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