KR20250009179A - Apparatus for processing substrate - Google Patents

Abstract

The present invention relates to a substrate processing device, and more particularly, to a substrate processing device equipped with a diffusion means for diffusing a process gas and supplying it to a showerhead.
A substrate processing device according to an embodiment of the present invention includes a process chamber that provides a process processing space for a substrate process, a gas diffusion unit that diffuses a process gas supplied to the process chamber, a showerhead that sprays the process gas diffused by the gas diffusion unit onto the substrate, and an injection nozzle provided in the gas diffusion unit that diffuses the process gas supplied to the process chamber and supplies it to the showerhead, wherein the injection nozzle includes a central injection nozzle that is arranged at the center of the gas diffusion unit and diffuses and sprays the process gas through a nozzle injection hole formed toward the showerhead, and a peripheral injection nozzle that is arranged around the central injection nozzle and diffuses and sprays the process gas using a diffusion plate formed between the central injection nozzle and the showerhead.

Description

{Apparatus for processing substrate}

The present invention relates to a substrate processing device, and more specifically, to a substrate processing device equipped with a diffusion means for diffusing a process gas and supplying it to a showerhead.

In order to deposit a thin film on a substrate, a thin film deposition method such as chemical vapor deposition (CVD) or atomic layer deposition (ALD) can be used. In the case of chemical vapor deposition or atomic layer deposition, a thin film can be formed by a process gas causing a chemical reaction on the surface of the substrate. In particular, in the case of atomic layer deposition, since one layer of the process gas attached to the surface of the substrate forms a thin film, it is possible to form a thin film with a thickness similar to the diameter of an atom.

To extend the range of process temperatures, plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD) can be used. Since plasma enhanced chemical vapor deposition and plasma enhanced atomic layer deposition can be processed at lower temperatures than chemical vapor deposition and atomic layer deposition, the properties of the thin film can be improved.

A substrate processing device that performs a process on a substrate may include a process chamber and a showerhead. The process chamber provides a space for fixing the substrate, and the showerhead may spray a process gas onto the substrate.

The showerhead may include a plurality of injection holes for injecting process gas. If the process gas is supplied concentratedly or sparsely to some of the plurality of injection holes, the distribution of the process gas injected through the showerhead may be formed unevenly. If the distribution of the process gas injected from the showerhead is uneven, the quality of the thin film deposited on the substrate may be reduced.

Therefore, an invention is required to form a uniform distribution of process gas sprayed through a showerhead.

Patent Publication No. 10-1306315 (2013.09.09)

The problem to be solved by the present invention is to provide a substrate processing device equipped with a diffusion means for diffusing process gas and supplying it to a showerhead.

The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the description below.

A substrate processing device according to an embodiment of the present invention includes a process chamber that provides a process processing space for a substrate process, a gas diffusion unit that diffuses a process gas supplied to the process chamber, a showerhead that sprays the process gas diffused by the gas diffusion unit onto the substrate, and an injection nozzle provided in the gas diffusion unit that diffuses the process gas supplied to the process chamber and supplies it to the showerhead, wherein the injection nozzle includes a central injection nozzle that is arranged at the center of the gas diffusion unit and diffuses and sprays the process gas through a nozzle injection hole formed toward the showerhead, and a peripheral injection nozzle that is arranged around the central injection nozzle and diffuses and sprays the process gas using a diffusion plate formed between the central injection nozzle and the showerhead.

The above central injection nozzle includes a nozzle diffusion space for diffusion of a process gas, and the nozzle injection hole injects the process gas diffused in the nozzle diffusion space into the showerhead.

The above nozzle injection holes include a vertical injection hole formed in a vertical direction with respect to the surface of the showerhead and connected to a central area of the nozzle diffusion space, and an inclined injection hole formed at an angle with respect to the surface of the showerhead and connected to an edge area of the nozzle diffusion space.

The above gas diffusion portion is formed by a sunken surface facing the showerhead and includes a nozzle groove into which the spray nozzle is coupled.

The above nozzle groove includes a central nozzle groove to which the central injection nozzle is coupled, and a peripheral nozzle groove to which the peripheral injection nozzles are coupled, and the peripheral nozzle groove is formed to be external to the central nozzle groove.

The above-mentioned central nozzle groove includes a central fixing groove into which the central injection nozzle is inserted and coupled, and a central guide groove that guides the process gas injected from the central injection nozzle in the diffusion direction.

The above peripheral nozzle groove includes a peripheral fixing groove into which the peripheral injection nozzle is inserted and coupled, and a peripheral guide groove that guides the diffusion direction of the process gas injected from the peripheral injection nozzle.

The above showerhead includes a shower injection hole that injects a process gas supplied from the gas diffusion unit, and the nozzle injection hole and the shower injection hole are arranged so as not to overlap each other when viewed from the injection direction.

The diameter of the central injection nozzle is formed larger than the diameters of the peripheral injection nozzles.

The diameter of the central injection nozzle is formed smaller than the diameters of the peripheral injection nozzles.

Specific details of other embodiments are included in the detailed description and drawings.

According to the substrate processing device according to the embodiment of the present invention as described above, since a diffusion means for diffusing process gas and supplying it to the showerhead is provided, there is an advantage in that the distribution of the process gas sprayed through the showerhead is formed uniformly.

Figure 1 is a drawing showing a substrate processing device according to an embodiment of the present invention.
Figure 2 is a drawing showing a gas injection unit.
Figure 3 is a bottom view of the gas diffusion section.
Figure 4 is a bottom view of a gas diffusion region in which the diameter of the central injection nozzle is smaller than the diameters of the peripheral injection nozzles.
Figure 5 is a drawing showing a central injection nozzle installed in a gas diffusion section.
Figure 6 is a drawing for explaining the arrangement relationship between the nozzle injection hole and the shower injection hole.
Figure 7 is a drawing showing a peripheral injection nozzle.
Figure 8 is a drawing showing a peripheral injection nozzle installed in a gas diffusion section.
Figure 9 is a drawing showing a central injection nozzle equipped with an inclined injection hole installed in a gas diffusion section.
Figure 10 is a drawing for explaining the arrangement relationship between the gas diffusion section and the central injection nozzle illustrated in Figure 9.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages and features of the present invention, and the methods for achieving them, will become apparent with reference to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and the present embodiments are provided only to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

Unless otherwise defined, all terms (including technical and scientific terms) used in this specification may be used with a meaning that can be commonly understood by a person of ordinary skill in the art to which the present invention belongs. In addition, terms defined in commonly used dictionaries shall not be ideally or excessively interpreted unless explicitly specifically defined.

Figure 1 is a drawing showing a substrate processing device according to an embodiment of the present invention.

Referring to FIG. 1, a substrate processing device (10) according to an embodiment of the present invention is configured to include a process chamber (100), a chamber lid (200), a substrate support unit (300), a gas supply unit (400), a gas injection unit (500), a power supply unit (600), and a control unit (700).

The substrate processing device (10) according to an embodiment of the present invention can deposit a thin film on a substrate (W). Specifically, the substrate processing device (10) can deposit a thin film on the substrate (W) using a plasma enhanced chemical vapor deposition (PECVD) method or a plasma enhanced atomic layer deposition (PEALD) method. Alternatively, the substrate processing device (10) can deposit a thin film on the substrate (W) using a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method. In this case, the power supply unit (600) used to generate plasma can be omitted.

The process chamber (100) provides a process treatment space for the process of the substrate (W). For this purpose, the process chamber (100) may be equipped with a substrate support unit (300) and a gas injection unit (500).

The chamber lid (200) is provided in the form of a plate and can seal the upper opening of the process chamber (100). In addition, the chamber lid (200) can support the gas injection unit (500). The gas injection unit (500) can be fixed to the lower surface of the chamber lid (200).

The substrate support (300) can support the substrate (W). The substrate support (300) can have a mounting surface on which the substrate (W) can be mounted. A process can be performed on the substrate (W) mounted on the mounting surface of the substrate support (300).

The substrate support (300) can heat the substrate (W). For this purpose, a coil (310) may be provided inside the substrate support (300). The coil (310) can generate heat with the supplied power. The heat emitted from the coil (310) can be transferred to the substrate (W) through the body of the substrate support (300). The coil (310) can serve as an electrode for forming an electric field. As described below, when RF power is supplied to the showerhead (520), an electric field can be formed between the showerhead (520) and the coil (310).

A gas transfer line (800) may be connected to the gas supply unit (400). The gas transfer line (800) may provide a transfer path for process gas transferred to the gas supply unit (400). A plurality of gas transfer lines (800) may be provided. The plurality of gas transfer lines (800) may transfer different process gases.

The gas supply unit (400) serves to supply process gas to the gas injection unit (500). The gas supply unit (400) can be connected to the gas injection unit (500).

The gas injection unit (500) performs the function of injecting the process gas to the substrate (W). Specifically, the gas injection unit (500) can inject the process gas with a uniform distribution over the entire surface area of the substrate (W). In the present invention, the process gas may include a source gas, a source purge gas, a reaction gas, and a reaction purge gas. The source gas, the source purge gas, the reaction gas, and the reaction purge gas may be sequentially injected from the gas injection unit (500), or at least some of them may be injected simultaneously. The source gas and the reaction gas may collide with each other and react after being injected from the gas injection unit (500). Then, the source gas activated by the reaction gas may come into contact with the substrate (W) to perform a process treatment on the substrate (W). For example, the activated source gas may be deposited as a thin film on the substrate (W).

The gas injection unit (500) is configured to include a gas diffusion unit (510) and a showerhead (520). The gas diffusion unit (510) performs the role of diffusing the process gas supplied to the process chamber (100). The process gas can be supplied from the gas supply unit (400) to the gas diffusion unit (510). The gas diffusion unit (510) can diffuse the process gas and deliver it to the showerhead (520).

The showerhead (520) can spray the process gas diffused by the gas diffusion unit (510) onto the substrate (W). The showerhead (520) can be provided with shower injection holes (521) for spraying the process gas. The shower injection holes (521) can spray the process gas supplied from the gas diffusion unit (510). The shower injection holes (521) can be distributed over a certain range of the showerhead (520). If the process gas is supplied concentratedly or sparsely to some of the shower injection holes (521), the distribution of the process gas sprayed through the showerhead (520) can be formed unevenly. If the process gas is unevenly distributed and sprayed, the quality of the thin film deposited on the substrate (W) can deteriorate. Since the process gas diffused by the gas diffusion unit (510) is sprayed through the showerhead (520), the distribution of the process gas sprayed onto the substrate (W) can be formed uniformly. As a result, the quality of the thin film deposited on the substrate (W) can be improved.

The power supply unit (600) can supply RF power for generating plasma to the process chamber (100). Specifically, the power supply unit (600) can supply RF power to the showerhead (520). The showerhead (520) may have a separate electrode plate (not shown) that receives RF power, or may serve as an electrode that receives RF power on its own. As described above, the substrate support unit (300) may include a coil (310) that serves as an electrode. When RF power is supplied to the showerhead (520), an electric field may be formed between the showerhead (520) and the coil (310) of the substrate support unit (300). The electric field formed by the supply of RF power causes the process gas introduced into the process chamber (100) to be converted into particles in a plasma state, and the plasma particles react with the process gas settled on the surface of the substrate (W), so that process processing for the substrate (W) may be performed.

The control unit (700) can perform overall control of the substrate processing device (10). For example, the control unit (700) can control the gas supply unit (400) to control the supply of process gas to the gas injection unit (500) or control the supply of RF power to the showerhead (520).

Fig. 2 is a drawing showing a gas injection part, Fig. 3 is a bottom view of a gas diffusion part, and Fig. 4 is a bottom view of a gas diffusion part in which the diameter of the central injection nozzle is smaller than the diameters of the peripheral injection nozzles.

Referring to FIGS. 2 and 3, the gas injection unit (500) may include a gas diffusion unit (510), a showerhead (520), and an injection nozzle (530, 540).

A gas diffusion groove (511) may be formed in the gas diffusion unit (510). The gas diffusion groove (511) may be formed by one side of the gas diffusion unit (510) being sunken inward. The gas diffusion groove (511) serves to diffuse the process gas supplied from the gas supply unit (400) to a certain range. The process gas diffused in the gas diffusion groove (511) may be distributed to the injection nozzles (530, 540) through the gas distribution line (516).

An injection nozzle (530, 540) may be provided at the end of a gas distribution line (516) branched from a gas diffusion groove (511). The injection nozzle (530, 540) may inject process gas supplied through the gas distribution line (516).

The gas diffusion portion (510) may include a nozzle groove (513, 514) in which a surface facing the showerhead (520) is sunken and a spray nozzle (530, 540) is coupled. The spray nozzle (530, 540) may be arranged in the nozzle groove (513, 514). The nozzle groove (513, 514) may include a central nozzle groove (513) and peripheral nozzle grooves (514). A central spray nozzle (530) may be coupled to the central nozzle groove (513), and peripheral spray nozzles (540) may be coupled to the peripheral nozzle groove (514).

The peripheral nozzle groove (514) may be formed to be external to the central nozzle groove (513). In this case, it is possible to form the size of the central nozzle groove (513) to the maximum for a plurality of peripheral nozzle grooves (514) arranged in a ring shape, and the injection amount of the process gas injected by the central injection nozzle (530) may be improved.

The injection nozzles (530, 540) are provided in the gas diffusion unit (510) and can diffuse the process gas supplied to the process chamber (100) and spray it to the showerhead (520). The injection nozzles (530, 540) may include a central injection nozzle (530) and a peripheral injection nozzle (540). The central injection nozzle (530) may be arranged in the center of the gas diffusion unit (510), and the peripheral injection nozzles (540) may be arranged around the central injection nozzle (530). A plurality of peripheral injection nozzles (540) may be provided. The plurality of peripheral injection nozzles (540) may be arranged in a circular shape centered around the central injection nozzle (530). For example, the distances between each of the plurality of peripheral injection nozzles (540) and the central injection nozzle (530) may all be formed to be the same.

The central injection nozzle (530) and the peripheral injection nozzles (540) can simultaneously inject the process gas. One peripheral injection nozzle (540) can inject the process gas in a certain injection range, and at least some of the injection ranges of adjacent peripheral injection nozzles (540) can overlap. A diffusion space for diffusion of the process gas can be formed between the gas diffusion unit (510) and the showerhead (520). The process gas injected by the central injection nozzle (530) and the peripheral injection nozzles (540) is diffused in the diffusion space, and the diffused process gas can be injected through the injection holes of the showerhead (520) to reach the substrate (W).

The central injection nozzle (530) may include a nozzle diffusion space (531) and a nozzle injection hole (532). The nozzle diffusion space (531) may be provided for diffusion of a process gas. The process gas supplied through the gas distribution line may be diffused in the nozzle diffusion space (531). A nozzle injection hole (532) may be connected to the nozzle diffusion space (531). The nozzle injection hole (532) may spray the process gas diffused in the nozzle diffusion space (531) to the showerhead (520).

The process gas injected through the nozzle injection hole (532) can be diffused in the gas diffusion space (513) formed between the gas diffusion part (510) and the showerhead (520). The process gas diffused in the gas diffusion space (513) can be injected onto the substrate (W) through the shower injection hole (521) of the showerhead (520).

The peripheral injection nozzle (540) may include a diffusion plate (542) (see FIG. 7). The peripheral injection nozzle (540) may diffuse and inject the process gas using the diffusion plate (542) formed between it and the showerhead (520).

As the process gas diffused by the central injection nozzle (530) and the peripheral injection nozzles (540) is further diffused in the gas diffusion space (513) and then sprayed through the showerhead (520), a process gas of uniform density can be sprayed onto the substrate (W).

In particular, the central injection nozzle (530) can diffuse and inject the process gas through a plurality of nozzle injection holes (532) formed toward the showerhead (520). In this case, the injection amount of the process gas injected toward the center of the substrate (W) can be improved. The process gas injected toward the center of the substrate (W) can be attached to the surface of the substrate (W) while diffusing to the edge of the substrate (W).

The diameter (D) of the central injection nozzle (530) may be formed larger than the diameter (d1) of the peripheral injection nozzles (540). The central injection nozzle (530) may inject the process gas toward the central area of the showerhead (520), and the peripheral injection nozzles (540) may diffuse and inject the process gas toward the edge of the showerhead (520).

The ratio of the diameter (d2) of the peripheral nozzle groove (514) to the diameter (d1) of the peripheral injection nozzle (540) can be determined within a range of 1 to 8. Specifically, d2/d1 can be included in a range of 1 to 8. The ratio of the diameter (D) of the central injection nozzle (530) to the diameter (d2) of the peripheral nozzle groove (514) can be determined within a range of 1 to 19. Specifically, D/d2 can be included in a range of 1 to 19. Here, the diameter (D) of the central injection nozzle (530) can be included in a range of 30 to 190 mm, the diameter (d1) of the peripheral injection nozzle (540) can be included in a range of 5 to 70 mm, and the diameter (d2) of the peripheral nozzle groove (514) can be included in a range of 10 to 80 mm.

As the diameters (D, d1, d2) of the central injection nozzle (530), the peripheral injection nozzle (540), and the peripheral nozzle grooves (514) are determined to appropriate sizes, the uniformity of the thin film deposited on the substrate (W) is improved, and the film properties such as resistivity and aspect ratio can be improved. The diameters (D, d1, d2) of the central injection nozzle (530), the peripheral injection nozzle (540), and the peripheral nozzle grooves (514) can be determined to appropriate sizes by considering the properties of the process gas, the flow rate of the process gas, the temperature of the process chamber (100), and the process time. For example, as illustrated in FIG. 4, the diameter of the central injection nozzle (530) can be formed smaller than the diameter of the peripheral injection nozzle (540). In this case, the process gas may be concentrated and sprayed into a portion of the central area of the showerhead (520) through the central spray nozzle (530), and the process gas may be diffused and sprayed into the remaining area of the showerhead (520) through the peripheral spray nozzle (540).

Figure 5 is a drawing showing a central injection nozzle installed in a gas diffusion section.

Referring to FIG. 5, the central injection nozzle (530) can be installed in the central nozzle groove (513) of the gas diffusion portion (510).

The gas diffusion unit (510) may include a center nozzle groove (513). The center injection nozzle (530) may be inserted into the center nozzle groove (513) and coupled to the gas diffusion unit (510). In the present invention, the center injection nozzle (530) may be provided to be detachable from the gas diffusion unit (510). A user may replace an old center injection nozzle (530) with a new center injection nozzle (530) or couple a center injection nozzle (530) suitable for the characteristics of the process to the gas diffusion unit (510).

Figure 6 is a drawing for explaining the arrangement relationship between the nozzle injection hole and the shower injection hole.

Referring to FIG. 6, the nozzle spray hole (532) and the shower spray hole (521) can be arranged so as not to overlap each other when viewed from the spraying direction.

If the nozzle injection hole (532) and the shower injection hole (521) overlap each other, the process gas injected from the nozzle injection hole (532) may pass through the shower injection hole (521) as is, and the diffusion of the process gas may not be performed normally. Since the nozzle injection hole (532) and the shower injection hole (521) do not overlap each other, the process gas injected from the nozzle injection hole (532) may collide with the surface of the showerhead (520) and be normally diffused in the gas diffusion space (513).

Figure 7 is a drawing showing a peripheral injection nozzle.

Referring to FIG. 7, the peripheral injection nozzle (540) is configured to include a nozzle body (541), a diffusion plate (542), and a leg (543).

The nozzle body (541) can provide a transport path for the process gas supplied to the process chamber (100). The process gas supplied to the gas diffusion unit (510) through the gas supply unit (400) can be transported to the surrounding injection nozzle (540) through the gas distribution line (516). The nozzle body (541) can provide a transport path for the process gas transported through the gas distribution line (516). The nozzle body (541) can include a through hole (PH) for transporting the process gas, and the process gas passing through the through hole (PH) can be discharged from the nozzle body (541).

The diffusion plate (542) plays a role in diffusing the process gas discharged from the nozzle body (541). The process gas discharged from the nozzle body (541) collides with the diffusion plate (542) and diffuses to the surroundings. The diffusion plate (542) may be arranged at a predetermined interval from the nozzle body (541) on the process gas discharge path. Accordingly, the process gas colliding with the diffusion plate (542) can diffuse to the surroundings through the gap between the nozzle body (541) and the diffusion plate (542).

The diffusion plate (542) can be coupled to the nozzle body (541). For this purpose, a leg (543) can be provided between the diffusion plate (542) and the nozzle body (541). For example, two legs (543) can be provided. The posture and position of the diffusion plate (542) with respect to the nozzle body (541) can be fixed by the legs (543), and the gap between the nozzle body (541) and the diffusion plate (542) can be maintained.

Figure 8 is a drawing showing a peripheral injection nozzle installed in a gas diffusion section.

Referring to FIG. 8, a peripheral injection nozzle (540) can be installed in a peripheral nozzle groove (514) of a gas diffusion portion (510).

The peripheral nozzle groove (514) may include a peripheral fixing groove (514a) and a peripheral guide groove (514b). The peripheral injection nozzle (540) may be inserted and coupled into the peripheral fixing groove (514a). Specifically, the peripheral fixing groove (514a) may provide a space in which the nozzle body (541) of the peripheral injection nozzle (540) is inserted and fixed. The nozzle body (541) may be inserted and fixed into the peripheral fixing groove (514a). Meanwhile, although not shown, the nozzle body (541) may be fixed to the gas diffusion unit (510) using a fastening means such as a bolt. For this purpose, the nozzle body (541) may be provided with a flange (not shown) for coupling with the bolt. In a state in which the nozzle body (541) is inserted into the peripheral fixing groove (514a), the nozzle body (541) may be fixed to the gas diffusion unit (510) by the fastening means.

The peripheral guide groove (514b) may serve to guide the diffusion direction of the process gas injected from the peripheral injection nozzle (540). The diffusion plate (542) of the peripheral injection nozzle (540) may be arranged in the peripheral guide groove (514b). The peripheral guide groove (514b) may include a peripheral guide inclined surface (515). The peripheral guide inclined surface (515) may be an inner surface of the peripheral guide groove (514b). The peripheral guide inclined surface (515) is formed to surround the diffusion plate (542) and may guide the process gas diffused from the diffusion plate (542) toward the showerhead (520). To this end, the distance between the peripheral guide inclined surface (515) and the showerhead (520) may decrease as it progresses from the center to the edge of the peripheral guide groove (514b). The process gas diffused by colliding with the diffusion plate (542) generally includes a horizontally moving component, but a vertically moving component of the process gas can be formed by the surrounding guide slope (515).

Fig. 9 is a drawing showing a central injection nozzle equipped with an inclined injection hole installed in a gas diffusion section, and Fig. 10 is a drawing for explaining the arrangement relationship between the gas diffusion section and the central injection nozzle shown in Fig. 9.

Referring to FIGS. 9 and 10, a central injection nozzle (550) can be installed in a gas diffusion portion (510).

The central injection nozzle (550) may include a gas diffusion groove (551) and a nozzle injection hole (552a, 552b). The gas diffusion groove (551) may be formed by one side of the gas diffusion unit (510) being sunken inward. The gas diffusion groove (551) serves to diffuse the process gas supplied from the gas supply unit (400) to a certain range.

The nozzle injection holes (552a, 552b) may include a vertical injection hole (552a) and an inclined injection hole (552b). The vertical injection hole (552a) is formed in a vertical direction with respect to the surface of the showerhead (520) and may be connected to a central region of the nozzle diffusion space (531). The vertical injection hole (552a) may inject a process gas in a direction perpendicular to the surface of the showerhead (520). The inclined injection hole (552b) may be formed at an angle with respect to the surface of the showerhead (520) and may be connected to an edge region of the nozzle diffusion space (531). The inclined injection hole (552b) may inject a process gas in an inclined direction with respect to the surface of the showerhead (520). Specifically, the inclined injection hole (552b) may inject a process gas from the center of the central injection nozzle (550) toward the outside. The injection range of the process gas by the central injection nozzle (550) can be expanded by the inclined injection hole (552b).

The gas diffusion unit (510) may include a center nozzle groove (513) for coupling a center injection nozzle (550). The center nozzle groove (513) may include a center fixing groove (513a) and a center guide groove (513b). The center injection nozzle (550) may be inserted and coupled into the center fixing groove (513a). Specifically, the center fixing groove (513a) may provide a space in which the center injection nozzle (550) is inserted and fixed.

The center guide groove (513b) may serve to guide the diffusion direction of the process gas sprayed from the center injection nozzle (550). The inclined injection hole (552b) of the center injection nozzle (550) may be arranged adjacent to the center guide groove (513b). The center guide groove (513b) may include a center guide inclined surface (516). The center guide inclined surface (516) may be an inner surface of the center guide groove (513b). The center guide inclined surface (516) is formed to surround the inclined injection hole (552b) and may guide the process gas sprayed from the inclined injection hole (552b) toward the showerhead (520). To this end, the distance between the center guide inclined surface (516) and the showerhead (520) may decrease as it progresses from the center to the edge of the center guide groove (513b). The process gas injected from the inclined injection hole (552b) can be guided by the center guide inclined surface (516) so that its injection range can be determined.

An angle (hereinafter referred to as a first angle) (A) between a surface of the showerhead (520) and a peripheral guide inclined surface (515), an angle (hereinafter referred to as a second angle) (B) between a surface of the showerhead (520) and a central guide inclined surface (516), and an angle (hereinafter referred to as a third angle) (C) between a surface of the showerhead (520) and an inclined spray hole (552b) may be provided as preset values. For example, the second angle (B) may be formed larger than the first angle (A), and the third angle (C) may be formed larger than the second angle (B). To explain this more specifically, the first angle (A) may be determined within a range of 5 to 45 degrees, the second angle (B) may be determined within a range of 10 to 90 degrees, and the third angle (C) may be determined within a range of 15 to 90 degrees.

As the first angle (A), the second angle (B), and the third angle (C) are determined to appropriate values, the uniformity of the thin film deposited on the substrate (W) can be improved, and the film properties such as resistivity and aspect ratio can be improved. The first angle (A), the second angle (B), and the third angle (C) can be determined to appropriate values by considering the properties of the process gas, the flow rate of the process gas, the temperature of the process chamber (100), and the process time.

Although the embodiments of the present invention have been described with reference to the above and the attached drawings, those skilled in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing the technical idea or essential characteristics thereof. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

10: Substrate processing device 100: Process chamber
200: Chamber lid 300: Substrate support
400: Gas supply section 500: Gas injection section
510: Gas diffusion section 520: Shower head
530, 550: Center injection nozzle 540: Peripheral injection nozzle
600: Power supply unit 700: Control unit

Claims (10)

A process chamber providing a process treatment space for a substrate process;
A gas diffusion unit for diffusing process gas supplied to the above process chamber;
A showerhead that sprays the process gas diffused by the gas diffusion unit onto the substrate; and
A spray nozzle is provided in the gas diffusion section and diffuses the process gas supplied to the process chamber and supplies it to the showerhead.
The above injection nozzle,
A central injection nozzle that is positioned at the center of the gas diffusion section and diffuses and injects process gas through a nozzle injection hole formed toward the shower head; and
A substrate processing device including a peripheral injection nozzle arranged around the central injection nozzle and spraying a process gas by diffusing it using a diffusion plate formed between the central injection nozzle and the showerhead. In the first paragraph,
The above central injection nozzle includes a nozzle diffusion space for diffusion of process gas,
The above nozzle injection hole is a substrate processing device that injects process gas diffused in the nozzle diffusion space to the showerhead. In the second paragraph,
The above nozzle injection hole is,
A vertical injection hole formed in a vertical direction with respect to the surface of the shower head and connected to the central area of the nozzle diffusion space; and
A substrate processing device including an inclined spray hole formed at an angle with respect to the surface of the showerhead and connected to an edge area of the nozzle diffusion space. In the first paragraph,
A substrate processing device wherein the gas diffusion portion is formed by a sunken surface facing the showerhead and includes a nozzle groove into which the spray nozzle is coupled. In the fourth paragraph,
The above nozzle home,
The above nozzle groove is a central nozzle groove to which the central injection nozzle is coupled; and
It includes a peripheral nozzle groove into which the peripheral injection nozzle is coupled,
A substrate processing device in which the peripheral nozzle groove is formed so as to be external to the central nozzle groove. In clause 5,
The above central nozzle home,
A central fixing groove into which the central injection nozzle is inserted and joined; and
A substrate processing device including a center guide groove that guides the diffusion direction of process gas injected from the center injection nozzle. In clause 5,
The above surrounding nozzle home,
A peripheral fixing groove into which the peripheral injection nozzle is inserted and joined; and
A substrate processing device including a peripheral guide groove that guides the diffusion direction of a process gas injected from the peripheral injection nozzle. In the first paragraph,
The above showerhead includes a shower injection hole that injects process gas supplied from the gas diffusion unit,
A substrate processing device in which the nozzle injection hole and the shower injection hole are positioned so as not to overlap each other when viewed from the direction in which they are injected. In the first paragraph,
A substrate processing device in which the diameter of the central injection nozzle is formed larger than the diameters of the peripheral injection nozzles. In the first paragraph,
A substrate processing device in which the diameter of the central injection nozzle is formed smaller than the diameters of the peripheral injection nozzles.

Images