KR20200051380A - Micro light emitting diode and method for manufacturing the same - Google Patents

Abstract

The present invention, a substrate; An n-type semiconductor layer formed on the substrate; A mask layer including an opening pattern formed on the n-type semiconductor layer; A light emitting structure layer penetrating the opening on the mask layer and forming a connection with the n-type semiconductor layer; An n-type electrode layer electrically connected to at least a portion of the n-type semiconductor layer; A p-type semiconductor layer formed on the light emitting structure layer; And a p-type electrode layer formed on the p-type semiconductor layer. The light emitting structure layer includes a plurality of distinct regions each including one or more light emitting structures emitting light of different wavelengths, and the plurality of distinct regions are repeatedly arranged to form a row and column matrix. It relates to a passive matrix driving type micro LED device and a manufacturing method thereof, which form a (matrix) structure and can form electrical disconnections between each other.

Description

MICRO LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME

The present invention relates to a passive matrix driving type micro LED device and a method for manufacturing the same.

The current display market is developing based on liquid crystal display (LCD) and organic lighting emitting diodes (OLED). Since the LCD is not a self-emission type device, other devices (polarizing film, back light unit, etc.) are required, and in the case of a display based on the self-emission type OLED, a material that emits red, blue, and green, respectively. Because the display is implemented using, it is possible to implement a thinner display. Most of the OLED display is applied as a display of an outdoor device, and since it uses organic materials, there is a fatal weakness that it is weak to the external environment, and there is a problem of low efficiency.

In order to solve the problems of the above-mentioned OLED and LCD, a display has been proposed using a light emitting diode (LED), which is a self-emissive element of an inorganic semiconductor. In the case of the micro LED developed to date, there are the following problems for commercialization. In order to realize a display, each LED structure constituting a sub-pixel must emit red, blue, and green light. In the case of forming an emission layer on a single substrate, conventional LEDs can implement only one color. Therefore, the process of transferring the LED structures that emit each color onto the substrate of the display must be additionally performed. Since such a transfer process requires a fine and precise process, it increases the difficulty of the display manufacturing process and lowers the yield, making it difficult to commercialize, and there is a limit to realizing a full color with excellent quality.

The present invention provides a passive matrix driving type micro LED device capable of realizing a display in a passive matrix method by forming a 3D light emitting structure of various colors on a single substrate in a pixel unit.

The present invention is to provide a method of manufacturing a passive matrix-driven micro LED device capable of forming a three-dimensional light-emitting structure of various colors on a single substrate on a single substrate without a complicated transfer process of an LED chip.

According to an aspect of the present invention, it is to provide a technology capable of realizing three or more distinct areas to realize a micro LED as a full color display device.

The problems to be solved by the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

A passive matrix driven micro LED substrate according to an embodiment of the present invention; The device includes a substrate; An n-type semiconductor layer formed on the substrate; A light emitting structure layer formed on the n-type semiconductor layer; An n-type electrode layer electrically connected to at least a portion of the n-type semiconductor layer; A p-type semiconductor layer formed on the light emitting structure layer; And a p-type electrode layer formed in connection with a part of the p-type semiconductor layer. The light emitting structure layer includes a plurality of distinct regions each including one or more light emitting structures emitting light of different wavelengths, and the plurality of distinct regions are repeatedly arranged to form a row and column matrix. It relates to a passive matrix-driven micro LED device that forms a (matrix) structure and is capable of forming electrical disconnections between each other.

According to an embodiment of the present invention, a current passivation layer formed between rows of the plurality of divided regions and forming electrical insulation between the rows of the divided regions may be further included.

According to an embodiment of the present invention, the current blocking layer may be formed to extend through the n-type semiconductor layer to the substrate.

According to an embodiment of the present invention, the n-type electrode layer may be provided for each row of the plurality of distinct regions, and the p-type electrode layer may be provided for each column of the plurality of distinct regions. have.

According to an embodiment of the present invention, the p-type electrode layer is formed to simultaneously cover at least a portion of each of the divided regions formed in the same column, indium tin oxide (ITO), indium zinc oxide (IZO), zinc Transparent containing at least one selected from the group consisting of oxide (ZnO), indium zinc tin oxide (IZTO), cadmium tin oxide (CTO), PEDOT (poly (3,4-ethylenedioxythiophene)) and carbon nanotubes (CNT) electrode; And a metal pad electrode formed to be connected to a part of the transparent electrode.

According to an embodiment of the present invention, the n-type electrode layer may be formed to be connected to the n-type semiconductor layer.

According to an embodiment of the present invention, the substrate may include an insulator layer.

According to an embodiment of the present invention, the thickness of the p-type semiconductor layer may be 100 nm to 5 μm.

According to an embodiment of the present invention, the light emitting structure layer may include an active layer including In and Ga formed thereon.

According to an embodiment of the present invention, the divided regions may be formed to have different in-migration levels in the active layer because one or more of the spacing and density between the centers between the light emitting structures are different from each other.

According to an embodiment of the present invention, the divided regions may have different average concentrations of In compared to Ga in the active layer, an average thickness of the active layer, or both.

According to an embodiment of the present invention, at least one of the heights or intervals of the light emitting structures of each of the divided regions is different from each other, and the separated regions of the light emitting structure layer have a higher gap between the light emitting structures. The larger it may be, the longer the wavelength may shine.

According to an embodiment of the present invention, the light emitting structure layer includes at least three or more distinct regions, and each of the three or more distinct regions may be arranged in the matrix structure.

According to an embodiment of the present invention, the light emitting structure may have a height of 100 nm to 50 μm, and an area of each of the divided regions may be 1 μm ² to 1 cm ² .

According to an embodiment of the present invention, the light-emitting structure, a cone; Polygonal horns; Cylinder; Polygonal columns; Circular ring; Polygonal rings; hemisphere; A truncated cone, polygonal pyramid, circular ring and polygonal ring shape with a flat top; And a cone, a polygonal pyramid and a polygonal column including a hollow recessed portion; And a line-shaped pillar; It may include one or more selected from the group consisting of structures,

A method of manufacturing a passive matrix-driven micro LED device according to another embodiment of the present invention includes forming an n-type semiconductor layer on a prepared substrate including an insulating material; Forming a light emitting structure layer on the n-type semiconductor layer; Forming a current blocking layer between the plurality of divided regions of the light emitting structure layer; And forming an n-type electrode layer connected to the n-type semiconductor layer and a p-type electrode layer formed on the light emitting structure layer, wherein the light emitting structure layer includes a plurality of light emitting structures, respectively. It may include a plurality of distinct regions including light emitting structures emitting light of different wavelengths, and the plurality of distinct regions may be repeatedly arranged to form a matrix structure forming rows and columns.

According to an embodiment of the present invention, the step of forming the current blocking layer may include a plurality of divided regions of the light emitting structure layer by forming grooves in a depth direction between the plurality of divided regions of the light emitting structure layer. Etching the mask layer and the n-type semiconductor layer to form electrical insulation with adjacent regions thereof; Electrical insulation comprising at least one selected from the group consisting of Al ₂ 0 ₃ , TiO ₂ , TiN, SiC _x , Si0 _x , Si _x N _y , SiO _x N _y and HSQ (Hydrogen silsesquioxane) in the groove formed in the depth direction. Injecting a material; It may be to include.

According to an embodiment of the present invention, forming a light emitting structure layer includes: forming a mask layer on the n-type semiconductor layer; Patterning a plurality of distinct regions, each of which includes a plurality of opening patterns in the mask layer, each pattern being separated from each other; Forming a light emitting structure layer by etching or growing on an n-type semiconductor layer opened through the opening pattern; And forming an n-type electrode layer connected to the n-type semiconductor layer and a p-type electrode layer formed on the light emitting structure layer. It may be to include.

According to an embodiment of the present invention, the groove may be formed through the mask layer and the n-type semiconductor layer to the substrate layer.

According to an embodiment of the present invention, the opening pattern includes at least one selected from the group consisting of circular, line, or polygonal shapes, and the opening pattern is different in at least one of shape, depth, and interval between centers. It may include a plurality of distinct regions, and a plurality of distinct regions of the light emitting structure layer may be generated according to the distinct regions of the opening pattern.

According to an embodiment of the present invention, the groove may be formed through the mask layer and the n-type semiconductor layer to the substrate layer.

According to an embodiment of the present invention, the light emitting structures of a plurality of distinct regions of the light emitting structure layer may be formed simultaneously.

According to an embodiment of the present invention, the light emitting structure layer, the active layer containing In and Ga is formed on the top, the step of forming the light emitting structure layer, 600 ℃ to 1100 ℃ and 50 torr to 500 torr It may be to form a light emitting structure.

According to an embodiment of the present invention, the opening pattern may have a diameter of 50 nm to 50 μm, and an interval between centers between respective openings of the opening pattern may be 50 nm to 30 μm.

The present invention can provide a passive matrix-driven micro LED device capable of realizing a color display and capable of dramatically reducing the manufacturing process and cost.

The present invention can provide a full color display device of high quality and economical cost, which is commercially available using the micro LED device according to the present invention.

The present invention is subdivided into units of sub-pixels, and various sizes and spacings are adjusted to form three-dimensional red, green, and blue light-emitting structures on a single substrate at a time, and through a series of processes, the three-dimensional structure It is possible to provide a method of manufacturing a passive matrix-driven micro LED device capable of realizing a passive matrix-type display for red, green, and blue light-emitting sources.

1 is a diagram illustrating a cross-section of a micro LED device of a passive matrix driving method according to the present invention according to an embodiment of the present invention.
2 shows an example of the configuration of a passive matrix driving method micro LED device according to an embodiment of the present invention, and is a) cross-sectional view and (b) top view of the micro LED device.
Figure 3, according to an embodiment of the present invention, illustratively shows the emission wavelength of the light emitting structure according to the present invention.
Figure 4, according to an embodiment of the present invention, illustratively shows the divided regions of the light emitting structure layer according to the present invention.
5 exemplarily shows a light emitting structure of divided regions according to the present invention according to an embodiment of the present invention.
6 exemplarily shows the arrangement of the divided regions of the micro LED device according to the present invention, according to an embodiment of the present invention.
7A to 11 illustrate exemplary processes of a method for manufacturing a micro LED device according to the present invention, according to an embodiment of the present invention.
12 is a view showing an exemplary light emitting structure grown according to the size of an opening pattern according to the present invention according to an embodiment of the present invention.
13 exemplarily shows various forms of a light emitting structure grown according to the size and shape of an opening pattern according to the present invention, according to an embodiment of the present invention.
14A shows an SEM image of a light emitting structure grown according to the size and spacing between centers of an opening pattern according to an embodiment of the present invention.
14B shows SEM images and light emission characteristics of a light emitting structure grown according to an interval between a size and a center of an opening pattern according to the present invention, according to an embodiment of the present invention.
Figure 15, according to an embodiment of the present invention, according to the size of the opening pattern according to the present invention and the distance between the centers of the elements in the distance (migration length) is shown by way of control.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. However, various changes may be made to the embodiments, and the scope of the patent application right is not limited or limited by these embodiments. It should be understood that all modifications, equivalents, or substitutes for the embodiments are included in the scope of rights.

The terms used in the examples are used for illustrative purposes only and should not be construed as limiting. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, the terms "include" or "have" are intended to indicate the presence of features, numbers, steps, actions, components, parts or combinations thereof described herein, one or more other features. It should be understood that the existence or addition possibilities of fields or numbers, steps, operations, components, parts or combinations thereof are not excluded in advance.

Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by a person skilled in the art to which the embodiment belongs. Terms, such as those defined in a commonly used dictionary, should be interpreted as having meanings consistent with meanings in the context of related technologies, and should not be interpreted as ideal or excessively formal meanings unless explicitly defined in the present application. Does not.

In addition, in the description with reference to the accompanying drawings, the same reference numerals are assigned to the same components regardless of reference numerals, and redundant descriptions thereof will be omitted. In describing the embodiments, when it is determined that detailed descriptions of related known technologies may unnecessarily obscure the subject matter of the embodiments, detailed descriptions thereof will be omitted.

As described above, although the embodiments have been described with limited drawings, those skilled in the art can apply various technical modifications and variations based on the above. For example, even if the described techniques are performed in a different order than the described method, and / or the described components are combined or combined in a different form from the described method, or replaced or replaced by another component or equivalent Appropriate results can be achieved.

Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.

The present invention relates to a passive matrix driving type micro LED device, and according to an embodiment of the present invention, a plurality of distinct regions each including one or more light emitting structures emitting light of different wavelengths on a single substrate The formed 3D light emitting structure may be formed, and a plurality of distinct areas including the 3D light emitting structure may be implemented as a passive matrix.

A passive matrix driven micro LED substrate according to an embodiment of the present invention; The device includes a substrate; An n-type semiconductor layer formed on the substrate; A light emitting structure layer formed in connection with the n-type semiconductor layer; An n-type electrode layer electrically connected to at least a portion of the n-type semiconductor layer; A p-type semiconductor layer formed on the light emitting structure layer; And a p-type electrode layer formed in connection with a part of the p-type semiconductor layer. The light emitting structure layer includes a plurality of distinct regions each including one or more light emitting structures emitting light of different wavelengths, and the plurality of distinct regions are repeatedly arranged to form a row and column matrix. It relates to a passive matrix-driven micro LED device that forms a (matrix) structure and is capable of forming electrical disconnections between each other.

According to an embodiment of the present invention, a passive matrix driving type micro LED device will be described with reference to FIG. 1, and FIG. 1 is a passive matrix driving type micro LED according to the present invention, according to an embodiment of the present invention. Illustratively showing the cross-section of the device, the device 100 in Figure 1, the substrate 110; n-type semiconductor layer 120; A light emitting structure layer 140; p-type electrode layer 150; And an n-type electrode layer 160.

More specifically, it will be described with reference to Figure 2, Figure 2, according to an embodiment of the present invention, showing an example of the configuration of a passive matrix driving method micro LED device according to the present invention, (a) cross-sectional view And (b) a top view.

In FIG. 2, the substrate 110 is applicable to a micro LED device, and may be appropriately selected according to an application field of the micro LED device, for example, sapphire (Al ₂ O ₃ ), Si, SiC, GaN, and It may include one or more selected from the group consisting of AlN, may include a single or multiple layers of the same or different components. For example, the substrate 110 may include a sapphire transparent substrate 110a and an undoped GaN insulator layer 110b.

The n-type semiconductor substrate layer 120 is formed on the substrate 110 and may include an n-type gallium nitride semiconductor. For example, the n-type gallium nitride semiconductor may include one or more selected from the group consisting of GaN, GaNP, GaNAs, GaNSb, AlGaN, InGaN, BAlGaN, GaAlNP, GaAlNAs, InAlGaN, GaAlNSb, GaInNP, GaInNAs, and GaInNSb. Can be. The n-type semiconductor substrate layer 120 may further include an n-type impurity element, for example, the n-type impurity may be N, P, As, Ge, Si, Cu, Ag, Au, Sb, Bi and the like.

The n-type semiconductor substrate layer 120 may be formed to a thickness of 1 μm to 10 μm, and according to an example, may be 2 μm to 4 μm. If the thickness of the n-type semiconductor substrate layer 120 is thinner than 1 μm, the quality of the micro LED device may not be sufficiently good, and if it is thicker than 10 μm, cracks in the semiconductor substrate layer may occur.

 The n-type semiconductor substrate layer 120 may be a small area or a large area, for example, 2 inches or more; More than 5 inches; Or it may be a large area of 12 inches or more.

The light emitting structure layer 140 may include a light emitting structure 141 that is connected to the n-type semiconductor layer 120 and emits light of a single or various wavelengths.

At this time, the growth angle of the light emitting structure is determined according to the components of the n-type semiconductor. It is not possible to grow at various angles, and the cross-sectional shape may be sharp, trapezoidal, or hexagonal, depending on the size of the opening while growing equally at a constant angle.

The light emitting structure layer 140 may include a plurality of light emitting structures 141 that are the same or different. The plurality of light emitting structures 141 may include a structure type, a size (eg, height, volume, cross-sectional area, diameter, length, bottom length, etc.), components, and arrangement methods (eg, spacing between centers, arrangement types, Density), components, growth methods, crystal structures, and the like, and at least one of these factors may be changed to control the emission wavelength of the light emitting structure 141.

Referring to Figure 3, Figure 3, according to an embodiment of the present invention, illustratively showing the emission wavelength of the light-emitting structure according to the present invention, the light-emitting structure 141 in FIG. 3, n- type semiconductor layer It may include a three-dimensional structure (141a) grown on (120) and the active layer (141b) formed on at least a portion on the three-dimensional structure (141a).

The three-dimensional structure 141a includes the same n-type semiconductor as the n-type semiconductor substrate 120, and the three-dimensional structure 141a is formed through etching or growth on the n-type semiconductor substrate 120. Can be. The three-dimensional structure 141a includes a cone; Polygonal horns; Cylinder; Polygonal columns; Circular ring; Polygonal rings; hemisphere; A truncated cone, polygonal pyramid, circular ring and polygonal ring shape with a flat top; A cone, a polygonal pyramid and a polygonal column including a hollow recess in the form of a cylinder; And a line-shaped pillar; It may include one or more selected from the group consisting of structures.

The active layer 141b includes a light emitting material and may be formed of a single layer or multiple layers. The active layer 141b may control the wavelength of light emitted by adjusting the thickness, growth rate, concentration ratio and migration of components, and the number of layers of the active layer 141b. More specifically, the active layer 141b, in order to control the wavelength of the light emitting light, according to the surface of the three-dimensional structure (141a), for example, the side (or, oblique), the thickness of the active layer according to the top, growth rate , It is possible to control the wavelength of light emitted by changing one or more selected from the group consisting of concentration ratio and migration and number of layers of the constituents.

Referring to FIG. 3, in FIG. 3 (a), the emission wavelengths R ₁ and R ₂ are different depending on the surface of the light emitting structure 141, and, for example, the green color is on the top surface of the hexagonal pyramid structure with the end cut off. Light emission (R ₁ ), and blue (R ₂ ) may emit light on the side surface of the hexagonal pyramid structure. In addition, in FIG. 3 (b), the wavelength of light emitted according to the height of the structure is different, and the upper surface may emit green (R ₁ ) or red (R ₃ ) depending on the height of the hexagonal pyramid structure with the end cut off. .

The active layer 141b may change the growth rate according to the growth temperature of the active layer on the three-dimensional structure 141a in order to control the wavelength of light emitted. Each layer in the plurality of active layers 141b may include active layers having the same or different growth rates from each other.

The active layer 141b may adjust the degree of in-migration in the active layer when the active layer is grown on the three-dimensional structure 141a in order to control the wavelength of light emitting light. The degree of in-migration may be changed according to the surface of the three-dimensional structure 141a, that is, the side surface (or the oblique surface), the top surface, and the like, to control the wavelength of light emitted. Alternatively, the degree of in-migration may be changed according to the size and volume of the three-dimensional structure 141a to control the wavelength of light emitted. Alternatively, the degree of in-migration may be changed according to the spacing between the arrangement and size and center of the 3D structure 141a to control the wavelength of light emitted. Alternatively, the degree of in-migration may be changed according to process conditions when the active layer is grown to control the wavelength of light emitted. This will be described in more detail in the manufacturing method. Each layer in the plurality of active layers 141b may include an active layer having the same or different In-migration degree to each other.

The active layer 141b may adjust an average concentration ratio of In to Ga in the active layer when growing the active layer on the three-dimensional structure 141a in order to control the wavelength of light emitted. Each layer in the plurality of active layers 141b may include an active layer having an average concentration ratio of In to Ga in the same or different active layers.

The active layer 141b includes one or more selected from the group consisting of BAlGaN, GaAlNP, GaAlNAs, InAlGaN, GaAlNSb, GaInNP, GaInNAs, and GaInNSb, and may be preferably InGaN.

The active layer 141b may further include a super lattice layer when formed in a plurality of layers, and may induce long-wavelength light emission by insertion of a super lattice layer. The superlattice layer may be formed of a single layer or multiple layers, and may include a quantum well layer.

The light emitting structures 141 may be randomly or regularly arranged. The light emitting structure 141 includes: a circle; Ellipse; polygon; Circles, ellipses, and polygons with center points; And lines; may be arranged in one or more patterns selected from the group consisting of. The circle, ellipse, and polygon with the center point may be a shape in which one center point is surrounded by a single or a plurality of circles, ellipses, or polygons.

The light emitting structure 141 may have a diameter of 50 nm to 30 μm (or a length of the bottom) and / or a height of 50 nm to 10 μm (or a length). The light emitting structure 141 can emit light having a longer wavelength as the height is higher.

The light emitting structures 141 may be arranged to have a gap between centers of 10 nm to 50 μm. In this case, the distance between the centers of the light emitting structures may be a level corresponding to the interval between the centers formed in the mask layer. The light emitting structure 141 may emit light having a longer wavelength as the spacing between the structures increases.

The light emitting structure layer 140 may be divided into a plurality of regions, and the light emitting structure 141 may be arranged. That is, each of a plurality of distinct regions including one or more light emitting structures 141 emitting light of different wavelengths, and the plurality of distinct regions are arranged repeatedly to form a row and column matrix (matrix) structure To form, it may be possible to form an electrical disconnection between each other.

The plurality of divided regions may be zoned in units of pixels, driving may be controlled for each region, and emission wavelength may be adjusted for each region. That is, the light emitting structure 141 may be arranged to form a single or a plurality of light emitting regions, and the light emitting structure layer 140 may be partitioned according to the wavelength of light emitting light. For example, at least three distinct regions may be included in the matrix structure, a first region R emitting red light, a second region G emitting green light, and a third emitting blue light. At least three distinct regions including the region B may be formed.

Each of the plurality of divided regions may have a shape, size (height, volume, cross-sectional area, diameter, length, bottom length, etc.) of the light emitting structure 141, and a distance between centers (for example, a space between the centers of each light emitting structure), Array type, density (e.g., volume ratio of the light emitting structure 141 to the area of the divided regions), component, growth method, crystal structure, and composition of the active layer (active layer thickness, In-migration, average of In compared to Ga Concentration, etc.) may be different.

Referring to Figure 4, Figure 4, according to an embodiment of the present invention, illustratively showing the divided regions of the light emitting structure layer according to the present invention, in Figure 4, the divided regions are each of the light emitting structure The space between the centers and / or the volume ratio of the light emitting structures to the area of the divided areas may be different, and the space between the centers of the light emitting structures of the first to third areas may be a first area> a second area> a third area. The volume ratio of the light emitting structure to the area of each of the first to third regions may be in the order of first region> second region> third region. That is, the longer the gap and the higher the density, the longer the wavelength of light can be emitted.

The light emitting structures of each of the plurality of divided areas have different heights or cross-sectional areas, and the divided areas of the light emitting structure layer emit light having a longer wavelength as the height or cross section of the light emitting structure is smaller. Can be.

The plurality of divided regions may include the same or different light emitting structures 141, respectively, in order to adjust the emission wavelength. Referring to FIG. 4, FIG. 4 is a view showing light emitting structures of divided regions according to the present invention according to an embodiment of the present invention by way of example. In FIG. 4 (a), a first region emitting red light ( R), a hexagonal columnar structure, a second region G emitting green light, a hexagonal pyramid structure having a truncated shape, and a third region B emitting blue light may include a pyramid structure. Alternatively, in FIG. 4B, the first region R emitting red light, a hexagonal pyramid structure having a truncated cylinder end, and the second region G emitting green light are hexagonal with a truncated shape. The pyramid structure and the third region B emitting blue light may include a hexagonal pyramid structure. The heights of the hexagonal pyramid structures, the hexagonal pyramid structures, and the hexagonal columnar structures of the truncated form may be the same or different.

Alternatively, the first region R emitting red light, the second region G emitting green light, and the third region B emitting blue light have a hexagonal pyramidal structure, a hexagonal columnar structure, or a truncated shape. The third region (B) that includes a hexagonal pyramid structure and emits blue light uses a light emission wavelength of the side surface of the hexagonal pyramid structure or hexagonal columnar structure and emits green light and a second area (G) that emits green light and red light. The emitting region 1 may use the side, top, or both emission wavelengths of a hexagonal pyramid structure having a truncated shape. That is, the second region G emitting green light and the first region R emitting red light are determined according to the height of the upper surface of the cut-off hexagonal pyramid, and the higher the height of the upper surface, the longer the wavelength of light. Can be.

The plurality of divided regions may each include the same or different active layer 141b, and the separated regions may have different degrees of In-migration in the active layer, and the first region to the first region The degree of In-migration in the active layer on the light emitting structure of the three regions may be in the order of first region> second region> third region.

The plurality of divided regions may have different in-migration levels in the active layer because at least one of a distance and a density between centers between the light-emitting structures are different from each other.

Each of the plurality of divided regions may have a different average concentration of In compared to Ga in the active layer, and a ratio of the average concentration of In compared to Ga in the active layer on the light emitting structures of the first to third regions is first. Region> second region> third region. Alternatively, each of the divided regions may have a different thickness of the active layer.

The plurality of divided regions may be regularly or randomly arranged in the matrix structure to have a constant periodic pattern. Referring to FIG. 6, according to an embodiment of the invention of FIG. 6, the micro LED according to the present invention The arrangement of the divided regions of the tank is exemplarily illustrated, and in FIG. 6, the regions (S1, S2, S3, ... Sn) divided in the X direction (row direction) and the Y direction (column direction) are separated. The regions S1 ', S1'',S2', S2 '' ... Sn ^m are arranged, Sn and Sn ^m are Each is a red, green, or blue light-emitting region, and the light-emitting regions may be arranged at the same or different intervals between centers of the light-emitting structures inside. The interval (b) between the centers of the divided regions may be 5 μm to 50 μm. In addition, the light emitting regions arranged in the X direction and the Y direction, as shown in FIG. 4, include the same or different light emitting structures, and the light emitting wavelengths of the light emitting structures may be adjusted according to an arrangement of desired light emitting regions. . For example, the plurality of light emitting areas may form a pixel unit including red, green, and blue light emitting areas as subpixels, which can provide a light source of a color required by a display in subpixel units, A color or full color micro display can be implemented.

The plurality of distinct regions may include one or more light emitting structures of a circle (or dot), a polygon (eg, a triangle, a square, a rectangle, and a hexagon), or both types of the divided regions. The diameter (a) is 5 µm or more; It may be 10 μm or more or 15 μm or more.

The plurality of distinct regions may form an electrical disconnection between each other, and may further include a current passivation layer for electrical isolation between the plurality of distinct regions. A current passivation layer (P) may be formed between the rows of the plurality of distinct regions and may divide the current injection region to form electrical insulation between the rows of the divided regions.

The current blocking layer (P) may be formed to extend vertically through the mask layer 130 and the n-type semiconductor layer 120 to at least a portion of the substrate 110.

In order to prevent the current blocking layer (P) from contacting the n-type semiconductor layer 120 exposed by the etching process and the transparent electrode, Al ₂ 0 ₃ , TiO ₂ , TiN, SiC _x , Si0 _x , Si _x N _y , SiO _x N _y and HSQ (Hydrogen silsesquioxane).

According to an embodiment of the present invention, a p-type semiconductor layer 142 may be further formed on the light emitting structure 141. The p-type semiconductor layer 142 may include a p-type gallium nitride semiconductor. For example, the p-type gallium nitride semiconductor includes one or more selected from the group consisting of GaN, GaNP, GaNAs, GaNSb, AlGaN, InGaN, BAlGaN, GaAlNP, GaAlNAs, InAlGaN, GaAlNSb, GaInNP, GaInNAs, and GaInNSb. , Preferably it is a p-type GaN comprising an AlGaN electron blocking layer. Further, a p-type impurity element may be further included, and the p-type impurity may be Mg, B, In, Ga, Al, Tl, or the like.

The thickness of the p-type semiconductor layer 142 may be 100 nm to 5 μm. At this time, when the thickness of the p-type semiconductor layer is formed to be thin at a level of several tens of nm, a p-type semiconductor layer in which the convex cross-sectional shape of the lower light emitting structure is revealed can be formed. As another example, when the thickness of the p-type semiconductor layer is formed to a thickness of several μm, the cross-sectional shape of the lower light emitting structure is all buried in the p-type semiconductor layer, and the p-type semiconductor layer having a flat top surface Can be formed.

The p-type electrode layer 150 and the n-type electrode layer 160 are for driving a micro LED element, and the p-type electrode layer 150 and the n-type electrode layer 160 are classified as above in the micro LED element. Each of the regions may be individually connected to an electrode to be driven in a passive matrix driving method, and light emission control may be individually possible.

Referring to FIG. 2, the p-type electrode layer 150 may be provided for each column of the plurality of distinct regions, and the n-type electrode layer 160 may be provided for each row of the plurality of distinct regions. .

The p-type electrode layer 150 is formed on at least a portion of the light emitting structure layer 140, for example, the p-type semiconductor layer 142, and simultaneously covers at least a portion of each of the divided regions formed in the same column. Can be formed. That is, in the column direction, transparent electrodes 151 such as ITO and ZnO cover the divided regions, and a metal pad electrode 152 formed to be connected to a part of the transparent electrode 161 may be formed.

 The p-type electrode layer 150 may include a transparent semiconductor oxide, metal, or both. For example, Co, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, Pt, Ni, Au, Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Zinc Oxide (ZnO), Indium Zinc Tin Oxide (IZTO), Cadmium Tin Oxide (CTO), PEDOT (poly (3,4-ethylenedioxythiophene)) and carbon nanotubes (CNT). The p-type electrode layer 160 may be composed of a single layer or multiple layers.

The n-type electrode layer 160 is electrically connected to at least a portion of the n-type semiconductor layer 120, and the n-type electrode layer 160 is at least partially on the n-type semiconductor substrate layer 120. Or formed on the mask layer 130 to form an n-type contact with the n-type semiconductor layer 120. The n-type electrode layer 150 is Co, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, Pt, Ni, Au, ITO and ZnO. It may include one or more selected from the group consisting of, n- type electrode layer 160 may be composed of a single layer or a plurality of layers.

The p-type electrode layer 150 and the n-type electrode layer 160 act as ohmic electrons to supply electric current to the micro LED device, thereby enabling electric driving, and may be formed to a thickness of 10 nm to 500 nm, preferably Is 50 nm to 200 nm thick.

The present invention relates to a micro display including a passive matrix driving type micro LED element according to the present invention. According to one embodiment of the present invention, since the micro-display applies the micro LED device of the passive matrix driving method according to the present invention, the manufacturing process and cost can be reduced, and the light emitting source is driven by the passive matrix driving method. Color implementation may be possible.

Since the micro-display uses a light-emitting structure grown on an n-type semiconductor substrate, it is possible to precisely control subpixel and / or pixel size, arrangement, and color of light, and implement a full color display.

The subpixels include subpixels of red, green, and blue emission regions, and the subpixels may be arranged regularly or randomly. That is, it can configure the divided regions S1..Sn and S1 '... Sn ^m of FIGS. 4 and 6 as light emitting sources of subpixels. The size of the sub-pixels of the red, green and blue light-emitting regions has a width (a) of 5 µm or more; It may be 10 μm or more or 15 μm or more. The red, green, and blue light-emitting sources may be in the form of circles (or dots), polygons (eg, triangles, squares, rectangles, hexagons), or both. In addition, various types of light emitting sources may be formed.

The present invention relates to a method of manufacturing a passive matrix driving type micro LED device according to the present invention. According to an embodiment of the present invention, the manufacturing method forms a light emitting structure layer having various light emitting regions on a single substrate in a single growth step, and performs a series of processes on the light emitting structure layer. By doing so, it is possible to manufacture a micro LED device capable of driving a passive matrix. Furthermore, the manufacturing process of the micro LED display can be simplified and the manufacturing cost can be drastically reduced.

According to an embodiment of the present invention, the manufacturing method will be described with reference to FIGS. 7 to 11, and FIGS. 7 to 11 are passive matrix driving methods according to the present invention, according to an embodiment of the present invention. Illustratively showing the process of the manufacturing method of the micro LED device, the manufacturing method in FIGS. 7A to 7B includes preparing a substrate 210; forming an n-type semiconductor layer (220); Forming a mask layer and a light emitting structure layer (230); Forming a current blocking layer (240); And forming an electrode layer (250).

The step 210 of preparing the substrate is a step of preparing the substrate 110 including the above-mentioned insulating material.

The step of forming the n-type semiconductor layer 220 is a step of forming the n-type semiconductor layer 120 on at least a portion of the prepared substrate 110 including an insulating material, and metal-organic chemical vapor deposition (MOCVD) ), MBE (Molecular Beam Epitaxy) or HVPE (Hydride Vapor Phase Epitaxy) may be used to form the n-type semiconductor layer 120. The process conditions are not particularly limited in the present invention, and the n-type semiconductor layer 120 is as mentioned above.

The forming of the mask layer and the light emitting structure layer 230 is a step of forming the mask layer 130 and the light emitting structure layer 140 on at least a portion of the n-type semiconductor layer 120, and forming a mask layer The step 231 may include a step 232 of patterning a plurality of distinct regions and a step 233 of forming a light emitting structure layer through etching or growth.

The step 231 of forming the mask layer is a step of depositing the mask layer 130 on at least a portion of the n-type semiconductor layer 120. The mask layer 130 may be formed to a thickness of 10 nm to 500 nm.

Referring to FIG. 8, in step 232 of patterning a plurality of distinct regions, the mask layer 130 includes a plurality of opening patterns, but patterning a plurality of distinct regions in which each pattern is separated from each other. It is a step. Since the opening pattern is formed in a single process on a single substrate, the light emitting source of the micro LED device forms the light emitting structure layer at one time without a transfer process, and it is possible to apply a large area substrate.

The step 232 of patterning the plurality of distinct regions forms a plurality of opening patterns in the mask layer 130 to form the above-mentioned distinct regions, and the gaps, shapes, or both between the centers are different from each other. Thus, it can be patterned into at least three or more regions separated from each other. It can be patterned by subdividing it into sub-pixels consisting of red, green and blue light emitting regions, and providing a light source for display on a single substrate in a single process.

The opening pattern may include one or more selected from the group consisting of circular, line, or polygonal shapes, and may include a plurality of distinct regions in which at least one of shape, depth, and center spacing is different. A plurality of distinct regions of the light emitting structure layer may be generated according to the distinct regions of the opening pattern.

According to the size (or diameter or width) of the opening pattern and the arrangement interval of the opening pattern, it is possible to adjust the shape, size, and composition of the active layer of the light emitting structure 141, as well as the fine emission wavelength of the light emitting structure 141 Can be adjusted.

Referring to Figure 12, Figure 12, according to an embodiment of the present invention, showing the light emitting structure grown according to the size of the opening pattern according to the present invention by way of example, Figure 12 (a) of the opening pattern It can be seen that the growth region and the capture radius are determined according to the size, and structures of various shapes are grown according to the growth region and the capture radius in FIG. 12B. The growth region and the capture radius can control the width and height of the grown structure, and further, can be utilized to control the composition of the active layer after the structure growth.

Referring to FIG. 13, FIG. 13 exemplarily shows various forms of a light emitting structure grown according to the size and shape of an opening pattern according to an embodiment of the present invention. Depending on the shape, a pyramid structure including a hexagonal pillar, a pyramid structure, a pyramid structure with a truncated end, and a hollow depression in the form of a cylinder may be formed.

 14A and 14B, FIG. 14A is a SEM image of a light emitting structure grown according to an interval between a size and a center of an opening pattern according to the present invention, according to an embodiment of the present invention. Looking at it, a pyramid structure may be formed according to the size of the opening pattern, and a pyramid structure with a truncated end may be formed, and the distance between the centers of the structures may be adjusted according to the size of the opening pattern.

 Referring to FIG. 14B, FIG. 14B exemplarily shows changes in the light emitting structure and the emission wavelength grown according to the size and spacing between the centers of the aperture pattern according to an embodiment of the present invention. It can be seen from (a) that the shape and size of the light emitting structure are changed according to the distance between the size and the center of the opening pattern, and the light emission wavelength of the light emitting structure is changed in FIG. 14B (b). That is, it can be confirmed that fine adjustment of the emission wavelength is possible according to the configuration of the aperture pattern. Also, referring to (b) of FIG. 14B, a pyramid structure having a pyramid structure and a truncated end is formed, and as the size of the opening pattern increases, the size and height of the truncated pyramid structure change. That is, it can be seen that the shape and height of the structure are adjusted according to the size of the opening pattern.

The step 232 of patterning a plurality of distinct regions may be patterned using a lithography process, reactive ion etching, wet etching, or the like. For example, the lithography process may use photo-lithography, laser lithography, e-beam lithography, nano-lithography, or the like.

The diameter (a, or width) of the opening pattern may be appropriately selected depending on the shape of the light emitting structure, preferably 50 nm to 50 μm, and the arrangement spacing of the opening pattern is greater than the diameter. Can be. The cross section of the opening pattern has a shape of at least one of a circle and a polygon, and the n-type semiconductor layer 120 is opened at a lower portion of the opening pattern. The distance between the centers between the openings in the opening pattern may be 50 nm to 30 μm.

The opening pattern includes at least one selected from the group consisting of circular, line, or polygonal shapes, and the opening pattern forms a plurality of distinct regions in which at least one of shape, depth, and center spacing is different, and Depending on the divided region, a plurality of divided regions of the light emitting structure layer may be generated.

Referring to FIG. 9, the step 233 of forming a light emitting structure layer is a step of forming a light emitting structure layer by etching or growing on an n-type semiconductor layer opened through an opening pattern, and growing the 3D structure. (233a); And forming an active layer (233b).

 The step 233 of forming the light emitting structure layer is a step of forming the light emitting structure layer 140 over the entire substrate in a single growth process according to the opening pattern, and includes a plurality of distinct regions of the light emitting structure layer 140. The light emitting structures 141 may be formed by growing at the same time. That is, the n-type semiconductor layer opened on the mask layer opening pattern of each of the divided regions is grown upwards ((230a in FIGS. 7A and 7B)) or etched ((230B in FIGS. 7A and 7B)). It is possible to form a light emitting structure layer 140 including at least three regions separated from each other to emit red, green, and blue light, which can form various light emitting regions on a single substrate without a transfer process and are required for display. The light source can be produced in a single process.

 The step 233a of growing a three-dimensional structure is a step of growing the three-dimensional structure 131a on an n-type semiconductor layer opened in the opening pattern.

In step 233a of growing the 3D structure, the height and / or shape of the structure may be adjusted according to the growth time. For example, it is possible to grow from a truncated pyramid structure to a pyramid structure by increasing the growth time. As another example, when the growth time is the same, the structure may be designed according to the size and spacing of the aforementioned opening pattern. For example, a pyramid structure is formed in a circular pattern with a wide or small gap, and a pyramid structure with a truncated end is formed in a circular pattern with a narrow or large gap. In addition, the smaller the size of the pattern, the higher the height of the pyramid structure with the end cut off.

The step (233a) of growing the three-dimensional structure may be performed at 900 ° C to 1100 ° C and 50 torr to 500 torr. In the above step, metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or hydrogen vapor phase epitaxy (HVPE) may be used.

In step 233a of growing the three-dimensional structure, the three-dimensional structure 141a is made of the same or different components from the n-type semiconductor layer 120, and the shape of the three-dimensional structure is as described above.

The step of forming the active layer 233b is a step of forming the active layer 141b on at least a portion of the three-dimensional structure 141a, and as described above, the configuration of the active layer can be adjusted. For example, an active layer including In and Ga may be formed on the grown light emitting structure layer.

The step (233b) of forming the active layer is performed at 500 ° C to 850 ° C, and the temperature range may be appropriately selected according to a desired growth rate of the active layer. In the forming of the active layer, metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or hydrogen vapor phase epitaxy (HVPE) may be used, and components and configurations of the active layer are as described above. .

 When forming the active layer, the difference in the growth rate and the content of the components can be applied to control the emission wavelength. For example, in the InGaN active layer, the emission wavelength of the hexagonal pyramidal structure and the truncated hexagonal pyramidal structure is changed by using the difference between the growth rate and the indium content of the InGaN layer formed on the c-axis crystal surface and the semi-polar crystal surface. I can do it.

When forming the active layer, the emission wavelength can be controlled by using a difference in the migration length of the component elements. For example, a light emitting region may be set according to the height of a hexagonal pyramid structure with a truncated end using a difference in migration length between indium and gallium. That is, the moving distance of the component elements can be adjusted by the size of the opening pattern and the distance between the centers. More specifically, referring to Figure 15, Figure 15, according to an embodiment of the present invention, according to the size of the opening pattern according to the present invention and the distance between the center of the center of the element (migration length) control by way of example As shown, when the distance between the centers increases, the degree of overlap of the capture radius is reduced, and when forming the active layer, it may affect the migration length of the element. This can control the degree of In-migration of the active layer. In addition, a super lattice layer may be further inserted to form an effective long-wavelength light emitting structure.

10 and 11, forming the current blocking layer 240 is a step of forming the current blocking layer between the plurality of divided regions of the light emitting structure layer. In operation 240 of forming the current blocking layer, grooves are formed in a depth direction between the plurality of divided regions of the light emitting structure layer to electrically insulate the plurality of divided regions of the light emitting structure layer from adjacent regions. Etching the mask layer and the n-type semiconductor layer so that they are formed (241); Injecting an electrical insulating material into the groove formed in the depth direction (242); may include.

The step of removing the mask layer 130 before the step of forming the current blocking layer 240 may be further included. This can be referred to as the process of Figure 7a.

Step 241 of etching the mask layer and the n-type semiconductor layer is etched such that the n-type semiconductor layer 120 enters to form an n-type contact region for electron injection, and the current blocking layer is transversely oriented. A mask layer for distinguishing sub-pixel regions (a plurality of divided regions) in the (row direction) and through the n-type semiconductor layer may be etched to the substrate layer. For example, in the etching, a reactive ion etching process may be performed.

In the step 242 of injecting the material, in order to prevent the n-type semiconductor layer exposed in the groove from contacting the transparent electrode layer, an electrical insulating material may be injected by a physical vapor deposition method. The electrically insulating material is as described above.

According to an embodiment of the present invention, after the step of forming the active layer (233b) or after the step of forming the current blocking layer (240) 240, the p-type gallium nitride semiconductor layer 142 on the three-dimensional structure 140 Forming may further include (not shown in the drawings). The step of forming the p-type gallium nitride semiconductor layer may use metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or hydrogen vapor phase epitaxy (HVPE), and p-type gallium nitride semiconductor layer 140 The components and composition of) are as mentioned above.

The forming of the electrode layer 250 includes: forming an n-type electrode layer 150 (251); And forming the p-type electrode layer 160 (252).

The step 251 of forming the n-type electrode layer 150 includes forming the n-type electrode layer 150 including metal on at least a portion of the n-type semiconductor layer 120 on which the etching process or the mask layer is not formed. It is a step of forming and connecting with an n-type semiconductor layer. The step 251 of forming the n-type electrode layer 150 may be formed along each column so that distinct regions are individually driven in a passive matrix manner.

 The step 252 of forming the p-type electrode layer 160 may include p-type electrode layer 150 on at least a portion of the light emitting structure layer 140, for example, at least a portion of the p-type gallium nitride semiconductor layer 142. ), And may include forming a transparent electrode layer (252a) and forming a metal pad layer on at least a portion of the transparent electrode layer (252b). The process conditions in forming the electrode layer 250 are not particularly limited.

As described above, although the present invention has been described with limited embodiments and drawings, the present invention is not limited to the above embodiments, and various modifications and variations from these descriptions will be made by those skilled in the art to which the present invention pertains. This is possible. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined not only by the following claims, but also by the claims and equivalents.

Claims (23)

Board;
An n-type semiconductor layer formed on the substrate;
A light emitting structure layer formed in connection with the n-type semiconductor layer;
An n-type electrode layer electrically connected to at least a portion of the n-type semiconductor layer;
A p-type semiconductor layer formed on the light emitting structure layer; And
A p-type electrode layer formed in connection with a part of the p-type semiconductor layer;
Including,
The light emitting structure layer includes a plurality of distinct regions each including one or more light emitting structures emitting light of different wavelengths.
The plurality of distinct regions are repeatedly arranged to form a matrix structure forming rows and columns, and it is possible to form electrical disconnections between each other.
Micro LED device with passive matrix driving.
According to claim 1,
Further comprising; a current passivation layer formed between the rows of the plurality of distinct regions and forming electrical insulation between the rows of the distinct regions;
Micro LED device with passive matrix driving.
According to claim 2,
The current blocking layer is formed to extend through the n-type semiconductor layer to the substrate,
Micro LED device with passive matrix driving.
According to claim 1,
The n-type electrode layer is provided for each row of the plurality of distinct regions,
The p-type electrode layer is provided for each column of the plurality of distinct regions,
Micro LED device with passive matrix driving.
According to claim 1,
The p-type electrode layer is formed to simultaneously cover at least a portion of each of the divided regions formed in the same column, and is provided with indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and indium zinc tin oxide. (IZTO), cadmium tin oxide (CTO), PEDOT (poly (3,4-ethylenedioxythiophene)) and a transparent electrode comprising at least one selected from the group consisting of carbon nanotubes (CNT); And a metal pad electrode formed to be connected to a part of the transparent electrode.
Micro LED device with passive matrix driving.
According to claim 1,
The n-type electrode layer is formed on a mask layer including an opening pattern formed on the n-type semiconductor layer,
It is formed to be connected to the n- type semiconductor layer through the mask layer,
Micro LED device with passive matrix driving.
According to claim 1,
The substrate is to include an insulator layer,
Micro LED device with passive matrix driving.
According to claim 1,
The p-type semiconductor layer has a thickness of 10 nm to 10 μm,
Micro LED device with passive matrix driving.
According to claim 1,
In the light emitting structure layer, an active layer including In and Ga is formed thereon,
Micro LED device with passive matrix driving.
The method of claim 9,
In the divided regions, one or more of the spacing and density between the centers between the light emitting structures are different from each other, so that the degree of In-migration in the active layer is differently formed.
Micro LED device with passive matrix driving.
The method of claim 9,
The divided regions, the average concentration of In compared to Ga in the active layer, the average thickness of the active layer, or both are different from each other,
Micro LED device with passive matrix driving.
According to claim 1,
At least one of height, size, or spacing of the light emitting structures of the divided regions is different from each other,
The divided regions of the light emitting structure layer, the higher the height of the light emitting structure, the larger the spacing, the longer the wavelength of light,
Micro LED device with passive matrix driving.
According to claim 1,
The light emitting structure layer includes at least three distinct regions,
Each of the three or more distinct regions is arranged in the matrix structure with a constant periodic pattern,
Micro LED device with passive matrix driving.
According to claim 1,
The light emitting structure has a height of 50 nm to 50 μm,
The area of each of the divided regions is 1 μm ² to 1 cm ² ,
Micro LED device with passive matrix driving.
According to claim 1,
The light emitting structure includes a cone; Polygonal horns; Cylinder; Polygonal columns; Circular ring; Polygonal rings; hemisphere; A truncated cone, polygonal pyramid, circular ring and polygonal ring shape with a flat top; And a cone, a polygonal pyramid and a polygonal column including a hollow recessed portion; And a line-shaped pillar; It includes at least one selected from the group consisting of structures,
Micro LED device with passive matrix driving.
Forming an n-type semiconductor layer on the prepared substrate including an insulating material;
Forming a mask layer and a light emitting structure layer in some regions on the n-type semiconductor layer;
Forming a current blocking layer between the plurality of divided regions of the light emitting structure layer;
And forming an n-type electrode layer connected to the n-type semiconductor layer and a p-type electrode layer formed on the light emitting structure layer.
The light emitting structure layer includes a plurality of light emitting structures, and each includes a plurality of distinct regions including light emitting structures emitting light of different wavelengths,
The plurality of distinct regions are repeatedly arranged to form a matrix structure consisting of rows and columns,
Method for manufacturing a passive matrix-driven micro LED device.
The method of claim 16,
The step of forming the current blocking layer,
A mask layer and an n-type semiconductor layer are formed to form a groove in a depth direction between the plurality of divided regions of the light emitting structure layer, so that the plurality of divided regions of the light emitting structure layer are electrically insulated from adjacent regions. Etching;
Electrical insulation comprising at least one selected from the group consisting of Al ₂ 0 ₃ , TiO ₂ , TiN, SiC _x , Si0 _x , Si _x N _y , SiO _x N _y and HSQ (Hydrogen silsesquioxane) in the groove formed in the depth direction. Injecting a material; Containing,
Method for manufacturing a passive matrix-driven micro LED device.
The method of claim 16,
Forming the mask layer and the light emitting structure layer,
Forming a mask layer on the n-type semiconductor layer;
Patterning a plurality of distinct regions, each of which includes a plurality of opening patterns in the mask layer, each pattern being separated from each other;
Forming a light emitting structure layer by etching or growing on the n-type semiconductor layer opened through the opening pattern; And
Forming an n-type electrode layer connected to the n-type semiconductor layer and a p-type electrode layer formed on the light emitting structure layer;
Containing,
Method for manufacturing a passive matrix-driven micro LED device.
The method of claim 16,
The grooves are formed through the mask layer and the n-type semiconductor layer to the substrate layer.
Method for manufacturing a passive matrix-driven micro LED device.
The method of claim 16,
The opening pattern includes at least one selected from the group consisting of circular, line, or polygonal shapes,
The opening pattern includes a plurality of distinct regions in which at least one of shape, depth, and center spacing is different,
A plurality of distinct regions of the light emitting structure layer is generated according to the distinct regions of the opening pattern,
Method for manufacturing a passive matrix-driven micro LED device.
The method of claim 16,
The light emitting structures of a plurality of distinct regions of the light emitting structure layer are formed by growing at the same time,
Method for manufacturing a passive matrix-driven micro LED device.
The method of claim 16,
In the light emitting structure layer, an active layer containing In and Ga is formed on the top,
The step of forming the light emitting structure layer is to grow the light emitting structure at 900 ° C to 1100 ° C and 50 torr to 500 torr, and to grow the active layer at 500 ° C to 850 ° C,
Method for manufacturing a passive matrix-driven micro LED device.
The method of claim 16,
The opening pattern has a diameter of 50 nm to 50 μm,
The distance between the centers between the respective openings of the opening pattern is 50 nm to 100 μm,
Method for manufacturing a passive matrix-driven micro LED device.

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