KR20200021775A - Support handle and method for manufacturing a compound semiconductor solar cell using the same - Google Patents

Abstract

The present invention relates to a support handle and a method for producing a compound semiconductor solar cell using the same.
According to one aspect of the invention, a support handle includes: a flexible substrate; An adhesive layer located on one side of the flexible substrate; And a foam type self-adhesive film adhered to the flexible substrate by the adhesive layer and having a self-adhesive surface on a surface opposite to the surface bonded to the adhesive layer.

Description

SUPPORT HANDLE AND METHOD FOR MANUFACTURING A COMPOUND SEMICONDUCTOR SOLAR CELL USING THE SAME}

The present invention relates to a support handle and a method for manufacturing a compound semiconductor solar cell using the same, and more particularly, a support handle capable of stably separating a compound semiconductor layer from a mother substrate after an epitaxial lift off (ELO) process, and the same. The manufacturing method of the used compound semiconductor solar cell is related.

A compound semiconductor solar cell is a method of manufacturing a compound semiconductor solar cell by using a mother substrate (GaAs wafer or Ge wafer) for forming the compound semiconductor layer together as a component of the solar cell without separating from the compound semiconductor layer, or ELO The mother substrate (GaAs wafer or Ge wafer) is separated from the compound semiconductor layer by removing the sacrificial layer using an epitaxial lift off process, and only the compound semiconductor layer is used as a component of the solar cell. It can manufacture by the method of manufacturing.

In the latter case, an Epitaxial Lift Off (ELO) process prevents damage to the compound semiconductor layer and uses a support handle for supporting the compound semiconductor layer in a subsequent process.

However, the support handles used in the related art can be used only once because of shrinkage of the support handle material generated in the ELO process and deformation of the adhesive layer for bonding the support handle to the compound semiconductor layer, thereby increasing the manufacturing cost of the compound semiconductor solar cell. There is a problem.

The present invention can be reused to reduce the manufacturing cost of the compound semiconductor solar cell, and a support handle that can stably separate the compound semiconductor layer from the mother substrate after the Epitaxial Lift Off (ELO) process and the compound semiconductor using the same It is an object to provide a method of manufacturing a solar cell.

According to one aspect of the invention, a support handle includes: a flexible substrate; An adhesive layer located on one side of the flexible substrate; And a foam type self-adhesive film adhered to the flexible substrate by the adhesive layer and having a self-adhesive surface on a surface opposite to the surface adhered to the adhesive layer.

The foam type self-adhesive film may be formed of any one material selected from acrylic, polyurethane, and polyethylene, and may be peeled at a temperature of 30 ° C. to 60 ° C.

A plurality of pores are formed on the self-adhesive surface, and the plurality of pores may be further formed inside the foam type self-adhesive film.

The plurality of pores formed on the self-adhesive surface and the plurality of pores further formed inside the self-adhesive film may be formed in non-uniform size, and may be unevenly distributed.

The flexible substrate may be formed of any one selected from glass, polypropylene, polyethylene, polycarbonate, polyurethane, and has a thickness of 100 μm or more. It may have acid resistance and solvent resistance.

Method for producing a compound semiconductor solar cell using the support handle of this configuration, forming a sacrificial layer on one side of the mother substrate; Forming a compound semiconductor layer on the sacrificial layer; Attaching an epitaxial lift off (ELO) film on the compound semiconductor layer; Performing an ELO process; Attaching a support handle to the ELO film; And separating the compound semiconductor layer from the mother substrate by using the support handle.

According to one aspect of the invention, a support handle includes: a flexible substrate; An adhesive layer located on one side of the flexible substrate; And a foam type self-adhesive film adhered to the flexible substrate by the adhesive layer and having a self-adhesive surface on a surface opposite to the surface adhered to the adhesive layer.

The foam type self-adhesive film may be formed of any one material selected from acrylic, polyurethane, and polyethylene, and may be peeled at a temperature of 30 ° C. to 60 ° C.

A plurality of pores are formed on the self-adhesive surface, and the plurality of pores may be further formed inside the foam type self-adhesive film.

The plurality of pores formed on the self-adhesive surface and the plurality of pores further formed inside the self-adhesive film may be formed in non-uniform size, and may be unevenly distributed.

The flexible substrate may be formed of any one selected from glass, polypropylene, polyethylene, polycarbonate, polyurethane, and has a thickness of 100 μm or more. It may have acid resistance and solvent resistance.

Method for producing a compound semiconductor solar cell using the support handle of this configuration, forming a sacrificial layer on one side of the mother substrate; Forming a compound semiconductor layer on the sacrificial layer; Attaching an epitaxial lift off (ELO) film on the compound semiconductor layer; Performing an ELO process; Attaching a support handle to the ELO film; And separating the compound semiconductor layer from the mother substrate by using the support handle.

1 is a perspective view of a compound semiconductor solar cell.
2 is a cross-sectional view of a support handle according to an embodiment of the present invention.
3 is a photograph of the self-adhesive surface shown in FIG. 2.
FIG. 4 is a process chart showing a method for manufacturing a compound semiconductor solar cell using the support handle shown in FIG. 2.
Figure 5 is a photograph comparing the embodiment of the present invention using a conventional type using a general adhesive tape and a foam type self-adhesive tape.

As the invention allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the written description. It is not intended to limit the invention to the specific embodiments, it can be understood to include all changes, equivalents, and substitutes included in the spirit and scope of the present invention.

In describing the present invention, terms such as first and second may be used to describe various components, but the components may not be limited by the terms. The terms may be used only for the purpose of distinguishing one component from another component.

For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component.

The term "and / or" may include a combination of a plurality of related items or any of a plurality of related items.

When a component is said to be "connected" or "coupled" to another component, it may be directly connected to or coupled to the other component, but other components may be present in the middle. Can be understood.

On the other hand, when a component is referred to as being "directly connected" or "directly coupled" to another component, it may be understood that there is no other component in between.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions may include plural expressions unless the context clearly indicates otherwise.

In this application, the terms "comprise" or "have" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It may be understood that the present invention does not exclude the possibility of the presence or addition of numbers, steps, operations, components, parts, or a combination thereof.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. When a portion of a layer, film, region, plate, etc. is said to be "on top" of another part, this includes not only when the other part is "right over" but also when there is another part in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.

Unless defined otherwise, all terms used herein, including technical or scientific terms, may have the same meaning as commonly understood by one of ordinary skill in the art.

Terms such as those defined in the commonly used dictionaries may be interpreted to have meanings consistent with the meanings in the context of the related art, and shall be interpreted in ideal or excessively formal meanings unless clearly defined in the present application. It may not be.

In addition, the following embodiments are provided to more fully describe those skilled in the art, and the shape and size of the elements in the drawings may be exaggerated for clarity.

Hereinafter, a support handle and a method of manufacturing a compound semiconductor solar cell using the same according to an embodiment of the present invention will be described with reference to the accompanying drawings.

1 is a perspective view of a compound semiconductor solar cell, FIG. 2 is a cross-sectional view of a support handle according to an embodiment of the present invention, and FIG. 3 is a process diagram showing a method of manufacturing a compound semiconductor solar cell using the support handle shown in FIG. 2. .

First, a compound semiconductor solar cell will be described with reference to FIG. 1.

The compound semiconductor solar cell includes a light absorbing layer PV, a window layer 10 positioned on the front surface of the light absorbing layer PV, a front electrode 20 positioned on the front surface of the window layer 10, and a window layer ( 10) the front contact layer 30 positioned between the front electrode 20, the antireflection film 40 positioned on the window layer 10, the rear contact layer 50 positioned on the rear surface of the light absorbing layer PV, and The rear electrode 60 may include a rear electrode 60 positioned on the rear surface of the rear contact layer 50.

Here, at least one of the anti-reflection film 40, the window layer 10, the front contact layer 30, and the rear contact layer 50 may be omitted, but as shown in FIG. It demonstrates as an example.

The light absorbing layer PV may be formed including a III-VI semiconductor compound. For example, GaInP compounds containing gallium (Ga), indium (In) and phosphorus (P) or GaAs compounds containing gallium (Ga) and arsenic (As) may be formed.

Hereinafter, the light absorbing layer (PV) will be described with an example containing a GaAs compound.

The light absorption layer PV is a p-type semiconductor layer PV-p doped with an impurity of a first conductivity type, for example, a p-type impurity, and an n-type semiconductor doped with an impurity of a second conductivity type, for example, an n-type impurity. Layer (PV-n).

Although not shown, the light absorbing layer PV may further include a rear electric field layer disposed at the rear of the p-type semiconductor layer PV-p.

The p-type semiconductor layer PV-p is formed by doping the compound semiconductor described above with a first conductivity type, that is, a p-type impurity, and the n-type semiconductor layer PV-n is formed by the second compound semiconductor in the aforementioned compound semiconductor. That is, n-type impurities may be formed by doping.

Here, the p-type impurity may be selected from carbon, magnesium, zinc or a combination thereof, and the n-type impurity may be selected from silicon, selenium, tellurium or a combination thereof.

The n-type semiconductor layer PV-n may be located in an area adjacent to the front electrode 20, and the p-type semiconductor layer PV-p may be disposed directly below the n-type semiconductor layer PV-n. It may be located in an area adjacent to).

That is, the distance between the n-type semiconductor layer PV-n and the front electrode 20 is smaller than the distance between the p-type semiconductor layer PV-p and the front electrode, and the n-type semiconductor layer PV-n The spacing between the back electrodes 60 is greater than the spacing between the p-type semiconductor layer PV-p and the back electrodes.

As a result, a pn junction in which the p-type semiconductor layer PV-p and the n-type semiconductor layer PV-n are bonded to each other is formed in the light absorbing layer PV. The generated electron-hole pair is separated into electrons and holes by the internal potential difference formed by the pn junction of the light absorbing layer PV so that the electrons move toward the n-type and the holes move toward the p-type.

Accordingly, holes generated in the light absorbing layer PV move to the back electrode 60 through the back contact layer 50, and electrons generated in the light absorbing layer PV are transferred to the window layer 10 and the front contact layer 30. It moves to the front electrode 20 through).

In contrast, the p-type semiconductor layer PV-p is positioned in the region adjacent to the front electrode 20 and the n-type semiconductor layer PV-n is directly below the p-type semiconductor layer PV-p. When located in the region adjacent to the hole generated in the light absorbing layer (PV) is moved to the front electrode 20 through the front contact layer 30, the electrons generated in the light absorbing layer (PV) is the back contact layer 50 It moves to the rear electrode 60 through).

In the case where the light absorbing layer PV further includes a rear electric field layer, the rear electric field layer is of the same conductive type as the upper layer in direct contact, that is, the n-type semiconductor layer PV-n or the p-type semiconductor layer PV-p. It may be formed of the same material as the window layer 10.

And the rear electric field layer is an upper layer in direct contact, that is, an n-type semiconductor layer (PV-n) or in order to effectively block the movement of charges (holes or electrons) to be moved toward the front electrode toward the rear electrode. The back surface of the p-type semiconductor layer PV-p is entirely formed.

That is, in the compound semiconductor solar cell illustrated in FIG. 1, when the rear field layer is formed on the rear side of the p-type semiconductor layer PV-p, the rear field layer serves to block electrons from moving toward the rear electrode. In order to effectively block electrons from moving toward the rear electrode, the rear electric field layer is located on the entire rear surface of the p-type semiconductor layer PV-p.

The light absorbing layer (PV) of this configuration can be prepared from a mother substrate by a metal organic chemical vapor deposition (MOCVD) method, a molecular beam epitaxy (MBE) method or any other suitable method for forming an epitaxial layer. Can be.

The p-type semiconductor layer PV-p and the n-type semiconductor layer PV-n may be made of the same material having the same bandgap (homogeneous junction), and different materials having different bandgaps may be different. It may consist of (heterojunction).

The window layer 10 may be formed between the light absorbing layer PV and the front electrode 20, and may be formed by doping a III-VI group semiconductor compound with a second conductivity type, that is, an n-type impurity.

However, when the p-type semiconductor layer PV-p is positioned on the n-type semiconductor layer PV-n and the window layer 10 is positioned on the p-type semiconductor layer PV-p, the window layer 10 is formed. It may include one conductivity type, that is, p-type impurities.

However, the window layer 10 may not include n-type or p-type impurities.

The window layer 10 functions to passivate the front surface of the light absorbing layer PV. Therefore, when the carrier (electrons or holes) move to the surface of the light absorbing layer PV, the window layer 10 can prevent the carrier from recombining at the surface of the light absorbing layer PV.

In addition, since the window layer 10 is disposed on the entire surface of the light absorbing layer PV, that is, on the light incident surface, the window layer 10 may be disposed in an amount greater than that of the energy band gap of the light absorbing layer PV so as to hardly absorb light incident on the light absorbing layer PV. It can have a high energy bandgap.

In order to form an energy band gap of the window layer 10 higher than that of the light absorbing layer, the window layer 10 may further contain aluminum (Al).

The anti-reflection film 40 may be located on the remaining area of the window layer 10 except for the area where the front electrode 20 and / or the front contact layer 30 is located.

Alternatively, the anti-reflection film 40 may be disposed on the front contact layer 30 and the front electrode 20 as well as the exposed window layer 10.

In this case, the compound semiconductor solar cell may further include a bus bar electrode that physically connects the plurality of front electrodes 20, and the bus bar electrode may be exposed to the outside without being covered by the anti-reflection film 40. .

The anti-reflection film 40 may include magnesium fluoride, zinc sulfide, titanium oxide, silicon oxide, derivatives thereof, or a combination thereof.

The front electrode 20 may be formed to extend in the first direction X-X ', and the plurality of front electrodes 20 may be spaced apart at regular intervals along the second direction Y-Y' perpendicular to the first direction. .

The front electrode 20 having such a configuration may be formed by including an electrically conductive material. For example, the front electrode 20 may include at least one of gold (Au), germanium (Ge), and nickel (Ni).

The front contact layer 30 positioned between the window layer 10 and the front electrode 20 is formed by doping the group III-VI semiconductor compound with a second impurity at a doping concentration higher than the impurity doping concentration of the window layer 10. can do.

The front contact layer 30 forms an ohmic contact between the window layer 10 and the front electrode 20. That is, when the front electrode 20 directly contacts the window layer 10, the ohmic contact between the front electrode 20 and the light absorbing layer PV may not be well formed due to the low impurity doping concentration of the window layer 10. Do not. Therefore, the carrier moved to the window layer 10 may disappear easily without moving to the front electrode 20.

However, when the front contact layer 30 is formed between the front electrode 20 and the window layer 10, the carrier is smoothly moved by the front contact layer 30 forming the ohmic contact with the front electrode 20. As a result, the short-circuit current density (Jsc) of the compound semiconductor solar cell increases. Accordingly, the efficiency of the solar cell can be further improved.

In order to form an ohmic contact with the front electrode 20, the doping concentration of the second impurity doped in the front contact layer 30 may be higher than the doping concentration of the second impurity doped in the window layer 10.

The front contact layer 30 may be formed in the same shape as the front electrode 20.

When the back of the p-type semiconductor layer PV-p of the light absorbing layer PV and the light absorbing layer PV have a rear electric field layer, the rear contact layer 50 located on the rear of the rear electric field layer may be a light absorbing layer ( PV) or the backside of the backside electric field layer as a whole, and may be formed by doping the III-VI semiconductor compound with a higher doping concentration than the p-type semiconductor layer (PV-p).

The back contact layer 50 may form an ohmic contact with the back electrode 160, thereby further improving the short circuit current density Jsc of the compound semiconductor solar cell. Accordingly, the efficiency of the solar cell can be further improved.

The thickness of the front contact layer 30 and the thickness of the back contact layer 50 may be formed to a thickness of 100nm to 300nm, respectively. For example, the front contact layer 30 is formed to a thickness of 100nm and the back contact layer ( 50) may be formed to a thickness of 300 nm.

In addition, unlike the front electrode 20, the rear electrode 60 positioned on the rear surface of the rear contact layer 50 may be formed of a sheet-shaped conductor positioned entirely on the rear surface of the rear contact layer 50. . That is, the rear electrode 60 may also be referred to as a sheet electrode positioned on the entire rear surface of the rear contact layer 50.

In this case, the rear electrode 60 may be formed in the same plane as the light absorbing layer PV, and may include gold (Au), platinum (Pt), titanium (Ti), tungsten (W), silicon (Si), and nickel (Ni). ), Magnesium (Mg), palladium (Pd), copper (Cu), and germanium (Ge) may be formed as a single film or a multi-layer including at least one material selected from, and the material forming the rear electrode is It may be appropriately selected depending on the conductivity type of the contact layer.

For example, when the back contact layer contains a p-type impurity, the back electrode 60 is made of gold (Au), platinum (Pt) / titanium (Ti), tungsten-silicon alloy (WSi), and silicon (Si) / It may be formed of any one selected from nickel (Ni) / magnesium (Mg) / nickel (Ni), and preferably, may be formed of gold (Au) having low contact resistance with a p-type back contact layer.

In addition, when the back contact layer 50 contains n-type impurities, the back electrode 60 may include palladium (Pd) / gold (Au), copper (Cu) / germanium (Ge), and nickel (Ni) / germanium- It may be formed of any one selected from alloys of gold (GeAu) / nickel (Ni) and gold (Au) / titanium (Ti), and preferably palladium (Pd) / with low contact resistance with a p-type back contact layer. It may be formed of gold (Au).

However, the material forming the back electrode may be appropriately selected from the above materials, and particularly, may be appropriately selected from materials having low contact resistance with the back contact layer.

In the above description, the compound semiconductor solar cell is provided with one light absorbing layer as an example, but a plurality of light absorbing layers may be formed.

In this case, the lower light absorbing layer (light absorbing layer of the middle cell and / or the bottom cell) may include a GaAs compound that absorbs light of the long wavelength band and photoelectrically converts the light absorbing layer (light absorbing layer of the top cell). It may include a GaInP compound that absorbs light of the photoelectric conversion, the tunnel junction layer may be located between the upper light absorbing layer and the lower light absorbing layer.

An intrinsic semiconductor layer may be further formed between the p-type semiconductor layer and the n-type semiconductor layer of the light absorbing layer.

Hereinafter, the method of manufacturing the compound semiconductor solar cell of the above-mentioned structure, and the support handle used for this method are demonstrated.

A method of manufacturing a compound semiconductor solar cell is largely provided by forming a sacrificial layer on one side of a mother substrate, forming a compound semiconductor layer on the sacrificial layer, and attaching an epitaxial lift off (ELO) film on the compound compound semiconductor layer. The method may include performing an ELO process, attaching a support handle to the ELO film, and separating the compound semiconductor layer from the mother substrate using the support handle.

Specifically, first, a sacrificial layer (1) on one side of a mother substrate (ie, a GaAs wafer or a Ge wafer) serving as a base for providing a suitable lattice structure in which a light absorbing layer (PV) is formed is described. 120, a compound semiconductor layer CS is formed on the sacrificial layer 120, and the ELO film 130 is attached to the compound semiconductor layer CS.

The compound semiconductor layer CS may include a back contact layer 50, a light absorbing layer PV, a window layer 10, and a front contact layer 30.

When the compound semiconductor layer CS includes the front contact layer 30, the front contact layer 30 may be formed entirely on the window layer 10, and may be formed of GaAs having excellent electrical conductivity for ohmic contact. have.

The ELO film 130 supports the compound semiconductor layer CS and the compound semiconductor layer CS when the sacrificial layer 120 is removed using hydrofluoric acid (HF) in the ELO process.

After attaching the ELO film 130 on the compound semiconductor layer CS, an ELO process is performed.

In the case where the compound semiconductor layer CS is formed using an inverse growth method, after the ELO process is performed, a front electrode is formed on one side (lower surface in FIG. 4) of the compound semiconductor layer CS, The compound semiconductor solar cell shown in FIG. 1 can be manufactured by forming a back electrode on the other side (upper surface in FIG. 4) of the compound semiconductor layer CS.

Here, the inverse growth method is a method of laminating in order from a layer (for example, a front contact layer) located on the front electrode side to a layer (for example, a back contact layer) located on the rear electrode side.

On the other hand, when the compound semiconductor layer CS is formed using the regular growth method, after the ELO process is performed, a rear electrode is formed on one side (lower surface in FIG. 4) of the compound semiconductor layer CS. The compound semiconductor solar cell shown in FIG. 1 can be manufactured by forming and forming a front electrode on the other surface (upper surface in FIG. 4) of the compound semiconductor layer CS.

Here, the regular growth method refers to a method of laminating in order from a layer (for example, a rear contact layer) located on the rear electrode side to a layer (for example, a front contact layer) located on the front electrode side.

As such, in order to form the front electrode and the rear electrode on both surfaces of the compound semiconductor layer CS, it is necessary to invert the compound semiconductor layer CS separated from the mother substrate 110.

At this time, the support handle according to the embodiment of the present invention shown in Figures 2 and 3 can be used.

The support handle 200 of the present embodiment is bonded to the flexible substrate 210 by the flexible substrate 210, the adhesive layer 220 positioned on one side of the flexible substrate 210, and the adhesive layer 220. It may include a foam type self-adhesive film 230 having a self-adhesive surface 230A on a surface opposite to the surface adhered to the adhesive layer 220.

A plurality of pores 230A-1 are formed on the self-adhesive surface 230A of the self-adhesive film, and a separate pressure-sensitive adhesive for adhesion with the ELO film 220 is not applied.

The plurality of pores 230A-1 formed on the self-adhesive surface 230A may be formed in a non-uniform size, as shown in FIG. 3, and may be non-uniformly distributed.

Although not shown, a plurality of pores may be further formed in the self-adhesive film 230, and the plurality of pores formed in the self-adhesive film 230 may be formed in a non-uniform size, and are distributed unevenly. Can be.

When a plurality of pores are formed inside the self-adhesive film 230, the cross section of the self-adhesive film may have the same cross section as shown in FIG. 3.

Foam-type self-adhesive film 230 may be formed of any one material selected from acrylic (acrylic), polyurethane (polyurethane), polyethylene (polyethylene).

The self-adhesive film 230 having such a configuration has a self-adhesive surface 230A when the support handle 200 is adhered to the ELO film 130 with the self-adhesive surface 230A facing the ELO film 130. Bubbles between the ELO film 130 and the ELO film 130 are trapped in the plurality of pores 230A-1 formed on the self-adhesive surface 230A, and thus, due to the bubbles between the ELO film 130 and the self-adhesive film 230. The adhesive force between the support handle 200 and the ELO film 130 may be suppressed from being lowered, and the adhesion state between the support handle 200 and the ELO film 130 may be maintained firmly.

The self-adhesive film 230 firmly adhered to the ELO film 130 is a thermal expansion of air trapped in the pores 230A-1 of the self-adhesive surface 230A under constant temperature conditions (30 ° C. to 60 ° C.). Due to this, it can be easily peeled from the ELO film.

The reason for limiting the temperature condition to 30 ° C to 60 ° C is that thermal expansion of air is not well performed at a temperature of less than 30 ° C, so that the self-adhesive film 230 and the ELO film 130 are not effectively peeled off. This is because thermal damage may be applied to the compound semiconductor layer at a temperature of 60 ° C or higher.

Therefore, the self-adhesive film 230 is preferably peeled from the ELO film 220 at a temperature of 30 ℃ to 60 ℃.

The flexible substrate 210 may be formed of any one material selected from glass, polypropylene, polyethylene, polycarbonate, and polyurethane, and has a thickness of 100 μm or more. It may be formed of (T1), and may have acid resistance and solvent resistance.

When the compound semiconductor layer is handled using the support handle 200 having such a configuration, the flexible substrate 210 and the mother substrate 110 may be in a vacuum fixed state by a chuck, respectively.

In this case, the support handle 200 may be attached to the ELO film 220 while the self-adhesive surface 230A faces the ELO film 220.

Alternatively, the support handle 200 may be lined with the ELO film 130 by a roll method.

Subsequently, in the process of removing the support handle 200, the foam type self-adhesive film 230 is separated from the ELO film 220 at a temperature of 30 ° C. to 60 ° C., and the foam type self adhesive film 230 is included. The support handle 200 is reused after cleaning the self-adhesive surface (230A).

FIG. 5 is a photograph comparing a conventional embodiment using a general adhesive tape with an embodiment of the present invention using a foam type self-adhesive tape, and in the case of using a conventional support handle using a general adhesive tape, it is impossible to remove fine bubbles. It can be seen that poor adhesion occurs, and lifting and wrinkles occur in some areas.

However, in the embodiment of the present invention using a foam type self-adhesive tape it can be seen that the above problems according to the prior art can be suppressed.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

110: mother substrate 120: sacrificial layer
130: ELO film 200: support handle
210: flexible substrate 220: adhesive layer
230: foam type self-adhesive film 230A: self-adhesive side

Claims (14)

Flexible substrates;
An adhesive layer located on one side of the flexible substrate; And
A foam type self-adhesive film adhered to the flexible substrate by the adhesive layer and having a self-adhesive surface on a surface opposite to the surface bonded to the adhesive layer.
Support handle comprising a. In claim 1,
The foam type self-adhesive film is a support handle formed of any one material selected from acrylic (acrylic), polyurethane (polyurethane), polyethylene (polyethylene). In claim 2,
And a plurality of pores formed in the self-adhesive surface. In claim 3,
And the plurality of pores are unevenly distributed in non-uniform size. In claim 3,
And a plurality of pores are further formed inside the foam type self-adhesive film. In claim 5,
And a plurality of pores formed inside the foam type self-adhesive film, which are unevenly distributed in a non-uniform size. In claim 2,
The foam type self-adhesive film is peeled at a temperature of 30 ℃ to 60 ℃ support handle. The method according to any one of claims 1 to 7,
The flexible substrate is a support handle formed of any one selected from glass, polypropylene, polyethylene, polycarbonate, and polyurethane. In claim 8,
The flexible substrate is formed to a thickness of 100㎛ or more, the support handle having acid resistance and solvent resistance. Forming a sacrificial layer on one side of the mother substrate;
Forming a compound semiconductor layer on the sacrificial layer;
Attaching an epitaxial lift off (ELO) film on the compound semiconductor layer;
Performing an ELO process;
Attaching a support handle to the ELO film; And
Separating the compound semiconductor layer from the mother substrate by using the support handle.
Including;
The support handle,
Flexible substrates;
An adhesive layer located on one side of the flexible substrate; And
A foam type self-adhesive film adhered to the flexible substrate by the adhesive layer and having a self-adhesive surface on a surface opposite to the surface bonded to the adhesive layer.
Including,
A plurality of pores are formed on the self-adhesive surface,
A method for producing a compound semiconductor solar cell, wherein the support handle is attached to the ELO film in a state in which the self-adhesive side faces the ELO film. In claim 10,
Method of manufacturing a compound semiconductor solar cell to form the foam type self-adhesive film of any one material selected from acrylic (acrylic), polyurethane (polyurethane), polyethylene (polyethylene). In claim 11,
A method of manufacturing a compound semiconductor solar cell, wherein the foam type self-adhesive film is peeled off from the ELO film at a temperature of 30 ° C. to 60 ° C. The method according to any one of claims 10 to 12,
A method for producing a compound semiconductor solar cell, wherein the flexible substrate is formed of any one selected from glass, polypropylene, polyethylene, polycarbonate, and polyurethane. In claim 13,
A method for producing a compound semiconductor solar cell, wherein the flexible substrate is formed to a thickness of 100 μm or more.

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