KR20200010805A - Light emitting device - Google Patents

Abstract

The light emitting device disclosed in the embodiment includes a conductive substrate; A plurality of light emitting cells disposed on the conductive substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer and spaced apart from each other; And a first insulating layer disposed between the plurality of light emitting cells and the conductive substrate, wherein the first insulating layer includes a first insulating portion disposed between the plurality of light emitting cells, and the first insulating portion The conductive substrate may include a first protrusion protruding in a direction toward the top surfaces of the plurality of light emitting cells, and the top surface of the first protrusion may be higher than the top surfaces of the plurality of active layers and disposed in the first conductive type.

Description

Light Emitting Device {LIGHT EMITTING DEVICE}

An embodiment of the invention relates to a light emitting device.

An embodiment of the present invention relates to an ultraviolet light emitting device having a plurality of light emitting cells.

Embodiments of the present invention relate to a light emitting device package having a light emitting device having a plurality of light emitting cells.

Light emitting diodes (LEDs) are widely used as one of light emitting devices. Light-emitting diodes use the properties of compound semiconductors to convert electrical signals into light, such as infrared, visible and ultraviolet light.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or 2-6 compound semiconductor materials have been developed using thin film growth technology and device materials. There is an advantage that can implement light of various wavelength bands such as blue and ultraviolet. In addition, a light emitting device such as a light emitting diode or a laser diode using a group 3-5 or 2-6 compound semiconductor material can be implemented with a white light source having high efficiency by using a fluorescent material or a combination of colors. Such a light emitting device has advantages of low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

For example, light emitting diodes using compound semiconductors are receiving great attention in the field of optical and high power electronic devices due to their high thermal stability and wide band gap energy. In particular, a blue light emitting device, a green light emitting device, an ultraviolet light emitting device, a red light emitting device, etc. using nitride semiconductors are commercially used and widely used.

In the case of the ultraviolet light emitting device, a light emitting diode that generates light distributed in the wavelength range of 200nm to 400nm, it is used in the wavelength band, in the case of short wavelength, sterilization, purification, etc., in the case of long wavelength can be used in an exposure machine or a curing machine.

Ultraviolet rays can be classified into UV-A (315nm ~ 400nm), UV-B (280nm ~ 315nm), and UV-C (200nm ~ 280nm) in order of long wavelength. The UV-A (315nm ~ 400nm) area is applied to various fields such as industrial UV curing, printing ink curing, exposure machine, forgery discrimination, photocatalyst sterilization, special lighting (aquarium / agriculture, etc.), and UV-B (280nm ~ 315nm). ) Area is used for medical purposes, and UV-C (200nm ~ 280nm) area is applied to air purification, water purification and sterilization products.

An embodiment of the present invention provides a light emitting device having a plurality of light emitting cells.

An embodiment of the present invention provides an ultraviolet light emitting device having a plurality of light emitting cells.

An embodiment of the present invention provides a light emitting device including an electrode that connects adjacent light emitting cells under a plurality of light emitting cells.

Provided is a light emitting device package having a light emitting device according to an embodiment of the present invention.

A light emitting device according to an embodiment of the present invention includes a conductive substrate; A plurality of light emitting cells disposed on the conductive substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer and spaced apart from each other; And a first insulating layer disposed between the plurality of light emitting cells and the conductive substrate, wherein the first insulating layer includes a first insulating portion disposed between the plurality of light emitting cells, and the first insulating portion The conductive substrate may include a first protrusion protruding in a direction toward the top surfaces of the plurality of light emitting cells, and the top surface of the first protrusion may be higher than the top surfaces of the plurality of active layers and disposed in the first conductive type.

According to an embodiment of the present invention, a plurality of first electrodes are disposed between the plurality of light emitting cells and the conductive substrate, and the first electrodes include a second protrusion that overlaps the first insulating portion in a vertical direction. The second protrusion may be higher than a bottom surface of the light emitting cell or a bottom surface of the second conductive semiconductor layer.

According to an embodiment of the present invention, a first recess is disposed in each of the plurality of light emitting cells, and the first recess extends from a lower surface of the second conductive semiconductor layer to a lower portion of the first conductive semiconductor layer. The first electrode may extend through the first recess and be electrically connected to the first conductive semiconductor layer.

According to an embodiment of the present invention, the plurality of light emitting cells include first, second and third light emitting cells spaced apart from each other, and the first to third light emitting cells are electrically connected to a second electrode disposed below. The second electrode connected to the first light emitting cell may be connected to the first electrode connected to the second light emitting cell, and the second electrode connected to the second light emitting cell may be connected to the first electrode connected to the third light emitting cell. have.

In example embodiments, the second light emitting cell may be disposed between the first and third light emitting cells, and the first protrusion may be disposed on at least two side surfaces of the second light emitting cell.

According to an embodiment of the present invention, the second light emitting cell is disposed between the first and third light emitting cells, and the first protrusion is an area in which the second light emitting cell and the first light emitting cell face each other, and the first light emitting cell faces each other. The second light emitting cell and the third light emitting cell may be disposed to face each other.

In example embodiments, the first insulating layer may include a second insulating part disposed in the first recess, and a width of an upper surface of the first insulating part may be wider than a gap between the light emitting cells.

According to an embodiment of the present invention, the outer side of each light emitting cell may include an outer recess having an inclined side surface, and the depth of the outer recess of each of the light emitting cells may be equal to the depth of the first recess.

In example embodiments, the first electrode includes a connection part connected to the first conductive semiconductor layer in the first recess, and the length of the connection part is greater than a distance between the first recesses of the light emitting cells. Can be large.

According to an embodiment of the present invention, the length of the first recess has a long length in one direction, the length direction of the first recess is disposed in the same direction in each of the light emitting cells, and the first recess The longitudinal direction of may be disposed in a direction orthogonal to each other with respect to adjacent light emitting cells.

According to an embodiment of the present invention, the upper surface of the plurality of light emitting cells may include an uneven portion and a reflecting portion disposed in an area between the plurality of light emitting cells.

According to an embodiment of the present invention, the plurality of light emitting cells are connected to each other in series, and each of the plurality of light emitting cells may emit a wavelength of 280 nm or less.

A light emitting device package according to an embodiment of the present invention, the light emitting device disclosed above; A translucent film on the light emitting element; And a support member under the light emitting device.

The embodiment of the present invention can improve the reliability of the high voltage light emitting device by disposing a plurality of light emitting cells.

The embodiment of the present invention can improve the reliability of the high current light emitting device by disposing a plurality of light emitting cells.

The embodiment of the present invention can increase the area of the connection electrode for connecting a plurality of light emitting cells emitting ultraviolet light or a wavelength of 280nm or less in series or in parallel, thereby improving current spreading.

Embodiment of the present invention can improve the reliability of the ultraviolet light emitting device and the package having the same.

1 is a plan view of a light emitting device having a plurality of light emitting cells according to an embodiment of the present invention.
FIG. 2 is an example of a cross-sectional view at the AA side of the light emitting device of FIG. 1.
3 is a partially enlarged view of the light emitting device of FIG. 2.
FIG. 4 is a diagram illustrating a region of a second connection electrode connecting regions between light emitting cells and adjacent light emitting cells on the light emitting device of FIG. 1.
5 illustrates an example in which a reflector is disposed between light emitting cells in the light emitting device of FIG. 3.
6 is a diagram illustrating edge regions of respective light emitting cells on the light emitting device of FIG. 4.
7 is a plan view illustrating another example of a contact electrode of the light emitting device of FIG. 1.
FIG. 8 is a plan view illustrating a modified example of the contact electrode of the light emitting device of FIG. 7.
9 is a plan view of a light emitting device having a plurality of light emitting cells according to another embodiment of the present invention.
10 is another example of the light emitting device.
11 is an example of a light emitting device package having a light emitting device according to an embodiment of the present invention.

Hereinafter, embodiments will be described with reference to the accompanying drawings. In the description of an embodiment, each layer (film), region, pattern, or structure is “on / over” or “under” the substrate, each layer (film), region, pad, or pattern. In the case where it is described as being formed at, "on / over" and "under" include both "directly" or "indirectly" formed. do. In addition, the criteria for the top / top or bottom of each layer will be described based on the drawings, but the embodiment is not limited thereto.

Hereinafter, a light emitting device according to embodiments will be described in detail with reference to the accompanying drawings.

1 is a plan view of a light emitting device having a plurality of light emitting cells according to an embodiment of the present invention, FIG. 2 is an example of a cross-sectional view of the light emitting device of FIG. 1, and FIG. 3 is a partially enlarged view of the light emitting device of FIG. 2. 4 is a view illustrating a region of a second connection electrode connecting the region between the light emitting cells and adjacent light emitting cells on the light emitting device of FIG. 1.

1 to 4, the light emitting device 100 may include two or more light emitting cells. At least two light emitting cells in the light emitting device 100 may be disposed in the first direction, in the second direction, or in the first and second directions. At least two light emitting cells in the light emitting device 100 may be disposed on a single conductive substrate. At least one of the at least two light emitting cells in the light emitting device 100 may be electrically connected to a single conductive substrate. At least two light emitting cells in the light emitting device 100 may be connected in parallel with each other, or in series with each other. For example, three or four or more light emitting cells may be connected in series or in parallel with each other on a single conductive substrate. The plurality of light emitting cells may be spaced apart from each other at predetermined intervals.

According to an embodiment of the present invention, a first group having a plurality of light emitting cells and a second group having a plurality of light emitting cells may be disposed on a conductive substrate, and the first group and the second group may be connected in parallel to each other It can be driven separately. The first and second groups may include two or more light emitting cells or three or more light emitting cells. Here, the spaced apart light emitting cells are examples in which semiconductor layers of each light emitting cell and semiconductor layers of another light emitting cell are separated from each other. Hereinafter, the light emitting device 100 will be described as three or more light emitting cells for convenience of description, but the present invention is not limited thereto.

The light emitting device 100 may include a plurality of light emitting cells 111, 112, 113, and 114. The plurality of light emitting cells are examples in which at least four light emitting cells are arranged in first and second directions. That is, at least four light emitting cells may be arranged in a matrix or lattice shape. The plurality of light emitting cells 111, 112, 113, and 114 may be arranged in a first direction and a second direction, and may be connected in series. The light emitting cells may be driven in group units, for example, simultaneously driven, sequentially driven, or driven in rows or columns. At least one of the plurality of light emitting cells 111, 112, 113, and 114 may be the same size or different size as other light emitting cells.

2, in the light emitting device 100, the first and fourth light emitting cells 111 and 114 are adjacent to the first side surface S1, and the second and third light emitting cells 112 and 113 are formed on the first side surface S1. It may be adjacent to the second side S2 opposite to. The first and second light emitting cells 111 and 112 may be adjacent to the third side surface S3, and the third and fourth light emitting cells 113 and 114 may be disposed adjacent to the fourth side surface S4. Here, the first and second side surfaces S1 and S2 may be surfaces facing each other or facing each other. The third and fourth side surfaces S3 and S4 may face each other or face each other. The light emitting device 100 may have a top view shape of a polygonal shape such as a square or a rectangle, or a circular shape.

For example, the first light emitting cell 111 is connected in series with the second light emitting cell 112, and the second light emitting cell 112 is connected in series with the third light emitting cell 113. 113 may be connected in series with the fourth light emitting cell 114. The first light emitting cell 111 may be electrically connected to the conductive substrate 81, and the fourth light emitting cell 91 may be electrically connected to the pad 91.

In the light emitting device 100, the pad 91 may be disposed outside at least one of the light emitting cells 111, 112, 113, and 114. As another example, the pads may be arranged in plurality, and the plurality of pads may be disposed in the same light emitting cell or in different light emitting cells. The plurality of pads may be electrically connected to the same light emitting cells, or may be electrically connected to different light emitting cells.

The first interval d1 between the light emitting cells 111, 112, 113, and 114 may be the same in the first direction and the second direction. The first interval d1 may be 50 micrometers or less, for example, in the range of 10 to 50 micrometers. The gap 115 between the light emitting cells 111, 112, 113, and 114 may have a width of at least a first interval d1, and the maximum width of the gap 115 may be a gap between upper ends of the light emitting cells.

Referring to FIG. 2, each of the light emitting cells 111, 112, 113, and 114 in the light emitting device 100 may include a light emitting structure. The light emitting structure of each light emitting cell may include the same semiconductor stacked structure. Each of the light emitting cells may include a first conductive semiconductor layer 11, an active layer 12, and a second conductive semiconductor layer 13. In each of the light emitting cells 111, 112, 113, and 114, at least one of a superlattice structure layer and a cladding layer may be disposed between the first conductive semiconductor layer 11 and the active layer 12. At least one of an electron blocking layer and a cladding layer may be disposed between the second conductive semiconductor layer 13 and the active layer 12. The superlattice structure may include a stacked structure in which different semiconductor layers or layers having different refractive indices are alternately arranged.

The active layer 12 may be disposed between the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13. The active layer 12 may be disposed under the first conductive semiconductor layer 11, and the second conductive semiconductor layer 13 may be disposed under the active layer 12.

The first conductivity type semiconductor layer 11 includes a first conductivity type dopant, for example, an n type semiconductor layer to which an n type dopant is added, and the second conductivity type semiconductor layer 13 includes a second conductivity type dopant, It may include a p-type semiconductor layer to which a p-type dopant is added. In addition, the first conductive semiconductor layer 11 may be formed of a p-type semiconductor layer, and the second conductive semiconductor layer 13 may be formed of an n-type semiconductor layer. The first and second conductive semiconductor layers 11 and 13 and the active layer 12 may be implemented as compound semiconductor layers. The compound semiconductor layer may be implemented as at least one of a group II-VI compound semiconductor and a group III-V compound semiconductor.

The first conductive semiconductor layer 11 is _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) or (Al _x Ga _{1 - x} ) _y In _{1 - y} P (0≤x≤1, 0≤y≤1) can be implemented with a semiconductor material. The first conductive semiconductor layer 11 may be selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like, and Si, Ge, Sn, Se, Te, and the like. An n-type dopant may be doped. An upper surface of the first conductive semiconductor layer 11 may be formed as a rough uneven portion f1, and the uneven portion f1 may improve light extraction efficiency.

In the active layer 12, electrons (or holes) injected through the first conductive semiconductor layer 11 and holes (or electrons) injected through the second conductive semiconductor layer 13 meet each other. The layer emits light due to a band gap difference between energy bands of the active layer 12. The active layer 12 may be formed of any one of a single well structure, a multiple well structure, a quantum dot structure, or a quantum line structure, but is not limited thereto.

The active layer 12 may include a pair of a well layer and a barrier layer. When the active layer 12 is implemented in a multi-well structure, the active layer 12 may be implemented by stacking a plurality of well layers and a plurality of barrier layers. The well / barrier layer pair includes InGaN / GaN, GaN / AlGaN, AlGaN / AlGaN, InGaN / AlGaN, InGaN / InGaN, AlGaAs / GaAs, InGaAs / GaAs, InGaP / GaP, AlInGaP / InGaP, InP / GaAs It may include at least one selected from the group.

The second conductive semiconductor layer 13 may be formed of In _x Al _y Ga _{1 -x- y} N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1) or (Al _x Ga _{1 − x} ) _y In _{1 - y} P (0≤x≤1, 0≤y≤1) can be implemented with a semiconductor material. The second conductive semiconductor layer 13 may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and Mg, Zn, Ca, P-type dopants such as Sr and Ba may be doped.

The light emitting cells 111, 112, 113, and 114 may have at least one of np, pn, npn, and pnp junction structures. In addition, the doping concentrations of the impurities in the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be uniformly or non-uniformly formed. That is, the structure of the light emitting structure 10 may be formed in various ways, but is not limited thereto. The light emitting cells 111, 112, 113, and 114 may emit light of blue, green, red, or ultraviolet wavelengths. The light emitting cells 111, 112, 113, and 114 may emit the same peak wavelengths. The light emitting cells 111, 112, 113, and 114 may emit light having an ultraviolet wavelength.

For example, the light emitting cells 111, 112, 113, and 114 may emit an ultraviolet wavelength of about 280 nm or less or about 200 nm to 280 nm, and the first and second conductive semiconductor layers 11 and 13 may include AlGaN-based semiconductors. . The pair of the well layer and the barrier layer of the active layer 12 according to the embodiment may be implemented with AlGaN / AlGaN. The aluminum composition of the barrier layer may be higher than that of aluminum of the well layer. The aluminum composition of the well layer may range from 20% to 40%, and the aluminum composition of the barrier layer may range from 40% to 95%. The barrier layer may have a band gap wider than the band gap of the well layer. The barrier layer may have a thickness thicker than that of the well layer. The thickness of the well layer may range from 3 nm to 5 nm or from 2 nm to 4 nm. If the thickness of the well layer is thinner than the above range, the confinement efficiency of the carrier is lowered. The barrier layer may have a thickness in the range of 4 nm to 20 nm or in the range of 4 nm to 10 nm. When the thickness of the barrier layer is thinner than the above range, the blocking efficiency of the electrons is lowered, and when the barrier layer is thicker than the above range, the electrons are excessively blocked. According to the thickness of the barrier layer, the wavelength of light and the quantum well structure, each carrier can be effectively confined to the well layer. The barrier layer may comprise a dopant, for example an n-type dopant. The barrier layer may be an n-type semiconductor layer because an n-type dopant is added. When the barrier layer is an n-type semiconductor layer, the injection efficiency of electrons injected into the active layer 12 may be increased.

An electron blocking layer may be disposed between the active layer 12 and the second conductive semiconductor layer. The electron blocking layer may include a band gap wider than the band gap of the barrier layer. The electron blocking layer may include a single layer or a multilayer structure. The electron blocking layer may include at least one of an AlN-based semiconductor and an AlGaN-based semiconductor.

Each of the plurality of light emitting cells 111, 112, 113, and 114 may include one or a plurality of first recesses h1. The first recess h1 may penetrate the upper surface of the active layer 12 through the lower surface of the second conductive semiconductor layer 13 and expose the inside of the first conductive semiconductor layer 11. . The first recess h1 may be disposed in a plurality of light emitting cells. The first recess may decrease in width or diameter from the lower surface of the second conductive semiconductor layer 13 toward the upper surface of the first conductive semiconductor layer 11. The first contact electrode c1 may be disposed in the first recess h1. The first contact electrode c1 may be in contact with the first conductive semiconductor layer 11 in each of the first recesses h1. The first contact electrode c1 may include a metal or a non-metal material. The first contact electrode c1 may include, for example, at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo.

An external recess r1 may be disposed below the gap 115 between the light emitting cells 111, 112, 113, and 114. The external recess r1 may be disposed at a second interval d2 that is wider than the first interval d1 between the light emitting cells. The second interval d2 may be larger than the first interval d1. The external recess r1 may be inclined at an angle of 91 degrees or more with respect to a straight line horizontal to the lower side surfaces of the light emitting cells 111, 112, 113, and 114. Upper sides of the light emitting cells 111, 112, 113, and 114 may be inclined at an angle of 91 degrees or more with respect to a horizontal straight line. The first interval d1 may be an interval between adjacent active layers 12 among the light emitting cells 111, 112, 113, and 114, or an interval between lower surfaces of the adjacent first conductive semiconductor layers 11. The first and second recesses h1 and r1 may be formed through the same etching process, and may have the same depth d4. The depth d4 may be a distance from a lower surface of the second conductive semiconductor layer 13 to a lower portion of the first conductive semiconductor layer 11.

The light emitting device 100 includes a conductive substrate 81 supporting a plurality of light emitting cells 111, 112, 113, and 114, and a first electrode 83 and a second electrode between the conductive substrate 81 and the light emitting cells 111, 112, 113, and 114. 60), at least one first connection part c2 and at least one connection electrode 85, 86, and 87. Insulating layers 30, 40, and 50 may be disposed between the light emitting cells 111, 112, 113, and 114 and the conductive substrate 81. The insulating layers 30, 40, and 50 may include the light emitting cells 111, 112, 113, and 114, the first and second electrodes 83 and 60, the first connection part c2 and the connection electrodes 85, 86, and 87, and The conductive substrates 81 can be selectively insulated from each other.

The conductive substrate 81 is a layer supporting the plurality of light emitting cells 111, 112, 113, and 114, and may include a material having thermal conductivity and electrical conductivity. The conductive substrate 81 may include at least one of a metal material, for example, Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, and Cu-W. As another example, the light emitting device may be formed in a semiconductor substrate (eg, Si, Ge, GaN, GaAs, ZnO, SiC, SiGe, etc.) implanted with impurities as a supporting member.

The thickness of the conductive substrate 81 is 80% or more of the thickness of the light emitting device, and may be 30 micrometers or more, or 30 to 300 micrometers. The conductive substrate 81 may be formed in a single layer or a multilayer structure.

A bonding layer may be disposed below the conductive substrate 81. The first electrode 83 and the third insulating layer 50 may be disposed on the conductive substrate 81. At least one of a diffusion barrier layer and a bonding layer formed of a metal material may be included between the conductive substrate 81 and the first electrode 83. The diffusion barrier layer and the bonding layer may be formed in a single layer or multiple layers using at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, or Ta and optional alloys thereof. Can be.

The lower surface area of the conductive substrate 81 may be larger than the sum of the lower surface areas of the plurality of light emitting cells 111, 112, 113, and 114. The upper edge portion of the conductive substrate 81 may protrude outwardly from the side surfaces of the light emitting cells 111, 112, 113, and 114. The conductive substrate 81 may overlap the light emitting cells 111, 112, 113, and 114 and the pad 91 in a vertical direction.

The first electrode 83 may be disposed between at least one light emitting cell and the conductive substrate 81. The second electrode 60 may be disposed between the light emitting cells 111, 112, 113, and 114 and the conductive substrate 81.

The first electrode 83 may be electrically connected to the conductive substrate 81. The first electrode 83 may be electrically connected to the conductive substrate 81 and the first conductive semiconductor layer 11 of the first light emitting cell 111.

The first electrode 83 may be disposed under the first light emitting cell 1111. The first electrode 83 may not overlap with the second, third, and fourth light emitting cells 112, 113, and 114 in the vertical direction. The first electrode 83 may be spaced apart from the second to fourth light emitting cells 112, 113, and 114. As shown in FIG. 4, an upper surface area of the first electrode 83 may be smaller than an area of the lower surface of the first light emitting cell 111. An upper surface area of the first electrode 83 may be 1/4 or less of an upper surface area of the conductive substrate 81. An upper surface area of the first electrode 83 may be smaller than an area of the lower surface of the first light emitting cell 111 to reduce interference with electrodes connected to adjacent light emitting cells.

The first electrode 83 may include at least one of Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, Mo, and a material of an alloy having at least one of them. . The thickness of the first electrode 83 may be formed in the range of 300 to 900 nm.

The first electrode 83 may include a first connection part c2, and the first connection part c2 extends from the first electrode 83 in the direction of the first conductive semiconductor layer 11. It may protrude. The first connector c2 may be made of the same material as or different from that of the first electrode 83. A lower recess r2 may be disposed below the first connection part c2, and the lower recess r2 is concave in the direction of the first light emitting cell 111. A portion of the conductive substrate 81 may protrude from the lower recess r2.

The second electrode 60 may be disposed under each of the light emitting cells 111, 112, 113, and 114. The second electrode 60 may be disposed under the second conductive semiconductor layer 13 of each of the light emitting cells 111, 112, 113, and 114 and may be electrically connected to the second conductive semiconductor layer 13. The second electrode 60 may include a contact layer 15 and a reflective layer 62. The contact layer 61 is disposed between the reflective layer 62 and the second conductive semiconductor layer 13, and the reflective layer 62 is disposed between the contact layer 61 and the second insulating layer 40. Can be arranged. The contact layer 61 and the reflective layer 62 may be formed of different conductive materials, but are not limited thereto.

The contact layer 61 may be in contact with the second conductivity type semiconductor layer 13. The contact layer 61 may form an ohmic contact with the second conductivity-type semiconductor layer 13. The contact layer 61 may be formed of, for example, a conductive oxide film, a conductive nitride, or a metal. For example, the contact layer 61 may be formed of indium tin oxide (ITO), indium zinc oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZON), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), Indium Zinc Tin Oxide (IZTO), Indium Aluminum Zinc Oxide (IAZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZO Nitride ), ZnO, IrOx, RuOx, NiO, Pt, Ag, Ti may be formed of at least one.

The reflective layer 62 may be disposed between the contact layer 61 and each connection electrode 85, 86, 87 and may be electrically connected to the contact layer 61 and each connection electrode 85, 86, 87. . The reflective layer 62 may reflect light incident from the light emitting cells 111, 112, 113, and 114. The reflective layer 62 may be formed of a metal having a light reflectance of 70% or more. For example, the reflective layer 62 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the reflective layer 62 may be formed of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-zinc-tin-oxide (IZTO), and indium-aluminum-zinc- (AZO). Light-transmitting materials such as Oxide), Indium-Gallium-Zinc-Oxide (IGZO), Indium-Gallium-Tin-Oxide (IGTO), Aluminum-Zinc-Oxide (AZO), and Antimony-Tin-Oxide (ATO) It can be formed in multiple layers. For example, the reflective layer 62 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy. For example, the reflective layer 62 may be formed by alternately forming an Ag layer and a Ni layer, and may include a Ni / Ag / Ni, Ti layer, or Pt layer. As another example, the contact layer 61 may be formed under the reflective layer 62, and at least a portion thereof may pass through the reflective layer 62 to be in contact with the second conductive semiconductor layer 13. As another example, the reflective layer 62 may be disposed under the contact layer 61, and a portion thereof may pass through the contact layer 61 to be in contact with the second conductive semiconductor layer 13.

The second electrode 60 may include a capping layer disposed under the reflective layer 62. The capping layer 35 may connect the reflective layer 62 and the connection electrodes 85, 86, and 87. The capping layer may be formed of a metal, and may include, for example, at least one of Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials. The capping layer may protect the reflective layer 62.

The pad 91 may be disposed on the second electrode 60. The pad 91 may be disposed on the reflective layer 62 of the second electrode 60. The second electrode 60 disposed below the pad 91 may be disposed outside the side surface of the fourth light emitting cell 114. The pad 91 may be formed in a single layer or multiple layers. The pad 91 may include at least one of Ti, Ag, Cu, and Au. For example, the pad 91 may have a stacked structure of Ti / Ag / Cu / Au or a Ti / Cu / Au stacked structure in the case of a multilayer. The pad 91 may be disposed in the recessed area 91A disposed at a corner of the fourth light emitting cell 114. An area of the fourth light emitting cell 114 may be smaller than that of other light emitting cells.

One or more first connection parts c2 of the first electrode 83 may be disposed depending on a connection method of the light emitting cells 111, 112, 113, and 114. For example, when the plurality of light emitting cells 111, 112, 113, and 114 are connected in series, the first connection part c2 may be one, and when connected in parallel, two or more may be provided. When the plurality of light emitting cells 111, 112, 113, and 114 are connected in series, the connection electrodes 85, 86, and 87 may be disposed one smaller than the number of light emitting cells. For example, when four light emitting cells are arranged, three connection electrodes 85, 86, and 87 may be arranged.

Here, the insulating layer may include first to third insulating layers 30, 40, and 50. At least one or all of the first to third insulating layers 30, 40, and 50 may be disposed between the light emitting cells 111, 112, 113, and 114 and the conductive substrate 81.

The first insulating layer 30 may be disposed under and around the light emitting cells 111, 112, 113, and 114, and may be disposed on the first electrode 83 and the connection electrodes 85, 86, and 87. The second insulating layer 40 may be disposed below and around the second electrode 60, and may be disposed on the first electrode 83 and the connection electrodes 85, 86, and 87. The third insulating layer 50 may be disposed between the connection electrodes 85, 86, and 87 and the conductive substrate 81.

The first insulating layer 30 may be disposed around the first connector c2 and the fourth connector c4. The first insulating layer 30 may include a first insulating portion 31 disposed between the plurality of light emitting cells 111, 112, 113, and 114 and a second insulating portion 33 disposed in the first recess h1. Can be. The first and second insulating parts 31 and 33 may be simultaneously formed in the process of forming the first insulating layer 30. The first insulating layer 30 may be formed before the second electrode 60 is formed, or may be formed after the second electrode 60 is formed.

1 and 3, the first insulating portion 31 may include a first protrusion p1 protruding on the conductive substrate 81 in the upper direction of the plurality of light emitting cells 111, 112, 113, and 114. An upper surface of the first protrusion p1 may be higher than an upper surface of the active layer 12 of the light emitting cells. An upper surface of the first protrusion p1 may be lower than an upper surface of the first conductive semiconductor layer 11 of the light emitting cells. An upper surface width of the first protrusion p1 may be greater than a distance d1 between the light emitting cells. The length of the first protrusion p1 is a length extending along adjacent light emitting cells, and may be greater than the length of one side of each light emitting cell.

As illustrated in FIG. 1, the first protrusion p1 may be disposed between the first and second light emitting cells 111 and 112 and between the third and fourth light emitting cells 113 and 114. The first protrusion p1 may be disposed between the second and third light emitting cells 112 and 113 and between the first and fourth light emitting cells 111 and 114. The first protrusion p1 may be disposed on two side surfaces of the light emitting cells 111, 112, 113, and 114. The first protrusion p1 may be disposed between two light emitting cells 111, 112, 113, and 114 facing each other.

For example, the first insulating layer 30 may be formed of oxide or nitride. For example, the first insulating layer 30 may be formed of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, or the like. At least one may be selected and formed. For example, the thickness of the first insulating layer 30 may be 100 nanometers or more or 100 to 2000 nanometers. If the thickness of the first insulating layer 30 is formed to less than 100 nanometers may cause a problem in the insulating properties, if the thickness of the first insulating layer 30 is formed to exceed 2000 nanometers Cracking may occur at the process stage. The first insulating layer 30 may be in contact with the side surface of the first contact electrode c1 and may be in contact with the contact layer 61 and the reflective layer 62. The second insulating portion 33 may be disposed between the reflective layer 62 and the second conductive semiconductor layer 13. The second insulating portion 33 may be in contact with the bottom surface of the second conductive semiconductor layer 13.

In the region between the light emitting cells 111, 112, 113, and 114, a width of an upper surface and a lower surface of the first insulating portion 31 may be greater than a distance d1 between the light emitting cells 111, 112, 113, and 114. An upper surface width of the first insulating portion 31 or an upper surface width of the first protrusion p1 may be greater than a minimum distance d1 between the light emitting cells 111, 112, 113, and 114. Accordingly, both side surfaces of the first insulating part 31 may be disposed inside the side surfaces of the light emitting cells 111, 112, 113, and 114 so as to be in contact with a lower portion of the first conductive semiconductor layer 11 and overlap in a vertical direction. Can be. The first insulating part 31 may be disposed under the lower surface of the first conductive semiconductor layer 11 of each of the light emitting cells 111, 112, 113, and 114 to prevent moisture penetration.

In the first insulating layer 30, the first and second insulating parts 31 and 33 may be formed of the same insulating material or different insulating materials. For example, the first insulating part 31 may be formed of a reflective material having a distributed bragg reflector (DBR) structure.

The first connection part c2 of the first electrode 83 may be in contact with and electrically connected to the first contact electrode c1 disposed in the first light emitting cell 1111. The second insulating part 33 of the first insulating layer 30 may be disposed around the first connection part c2 and the first contact electrode c1. The second insulating part 33 may be disposed on a surface of the first recess h1 and a bottom surface of each of the light emitting cells 111, 112, 113, and 114. The second insulating part 33 may be in contact with the second conductive semiconductor layer 13, the active layer 12, and the first conductive semiconductor layer 11 disposed on the surface of the first recess h1. have. A portion of the second insulating portion 33 may extend on the bottom surface of the second conductive semiconductor layer 13. The second insulating part 33 blocks contact between the first connection part c2, the first contact electrode c1, the active layer 12, and the second conductive semiconductor layer 13. The second insulation portion 33 and the first insulation portion 31 may be connected to the second insulation layer 40. When the first and second insulating layers 30 and 40 are made of the same material, there may be no boundary between the two layers.

The second insulating layer 40 covers the bottom and side surfaces of the second electrode 60. The second insulating layer 40 insulates the bottom and the circumference of the second electrode 60 disposed below the light emitting cells 111, 112, 113, and 114. The second insulating layer 40 blocks the connection between the second electrode 60 and the first electrode 83 or the connection electrodes 83, 85, and 87.

A portion of the second insulating layer 40 may extend on an outer upper portion of the conductive substrate 81 to be exposed to the outer sides of the light emitting cells 111, 112, 113, and 114. An outer portion of the second insulating layer 40 may be in contact with a portion 35 of the first insulating layer 30 disposed around the pad 91. The second insulating layer 40 may be the same material as or different from the first insulating layer 30.

Here, an upper end of the second insulating part 33 of the first insulating layer 30 may be higher than an upper end of the active layer 12. An upper end of the first insulating part 31 may be disposed higher than an upper end of the active layer 12. Upper ends of the first and second insulating parts 31 and 33 may be disposed lower than an upper surface of the first conductive semiconductor layer 11. The first insulating part 31 may be disposed in the gap 115 between two adjacent light emitting cells 111, 112, 113, and 114.

When the first insulating portion 31 of the first insulating layer 30 is disposed higher than the upper end of the active layer 12 and is made of a reflective material, optical interference between adjacent light emitting cells 111, 112, 113, and 114 may be blocked. As shown in FIG. 4, the first insulating part 31 is exposed to the gap 115 between the plurality of light emitting cells 111, 112, 113, and 114, and functions as a sidewall, thereby blocking optical interference between them. As another example, when the material of the second insulating layer 40 is a reflective material, the first insulating part 31 may be a reflective material or a transmissive material. The second protrusions 41 of the second insulating layer 40 may protrude into regions between the light emitting cells 111, 112, 113, and 114. The second protrusion 41 may protrude into the gap 115 and may be in contact with the first insulating part 31. An upper end of the second protrusion 41 may protrude higher than a bottom surface of the second conductive semiconductor layer 13. The first protrusion p1 of the first insulating layer 30 and the second protrusion 41 of the second insulating layer 40 may be integrally formed.

Each of the light emitting cells 111, 112, 113, and 114 may include a light emitting structure having semiconductor layers and first and second electrodes. In this case, the second electrode of the first light emitting cell 111 may be connected to the first electrode of the second light emitting cell 112, and the second electrode of the second light emitting cell 112 may be the third light emitting device. The first electrode of the cell 113 may be connected, and the second electrode of the third light emitting cell 113 may be connected to the first electrode of the fourth light emitting cell 114.

The connection electrodes 85, 86, and 87 connect two adjacent light emitting cells with each other. The connection electrodes 85, 86, and 87 connect two electrodes of different light emitting cells disposed on the connection circuit to each other. The first connection electrode 85 connects the first and second light emitting cells 111 and 112, for example, the second conductive semiconductor layer 13 of the first light emitting cell 111 and the second light emitting cell 112. The first conductive semiconductor layer 11 is connected. Each of the connection electrodes 85, 86, and 87 may function as a first electrode of the second to fourth light emitting cells 112, 113, and 114, or may include a first electrode.

The second connection electrode 86 may connect the second and third light emitting cells 112 and 113. For example, the second connection electrode 86 may include the second conductive semiconductor layer 13 of the second light emitting cell 112 and the first conductive semiconductor layer 11 of the third light emitting cell 113. Connect it. The third connection electrode 87 connects the third and fourth light emitting cells 113 and 114, for example, the second conductive semiconductor layer 13 and the fourth light emitting cell 114 of the third light emitting cell 113. The first conductive semiconductor layer 11 of) is connected.

The first connection electrode 85 is a second electrode 60 connected to the second conductive semiconductor layer 13 of the first light emitting cell 111 and the first conductive semiconductor layer of the second light emitting cell 112. The first contact electrode c1 connected to (11) is connected. The second connection electrode 86 is a second electrode 60 connected to the second conductive semiconductor layer 13 of the second light emitting cell 112 and the first conductive semiconductor layer of the third light emitting cell 113. The first contact electrode c1 connected to (11) is connected. The third connection electrode 87 is a second electrode 60 connected to the second conductive semiconductor layer 13 of the third light emitting cell 113 and the first conductive semiconductor layer of the fourth light emitting cell 114. The first contact electrode c1 connected to (11) is connected.

The connection electrodes 85, 86, and 87 may be disposed under the second insulating layer 40. The connection electrodes 85, 86, and 87 may include a second connection part c3 and a third connection part c4. The second connection part c3 is connected to the second electrode 60 disposed under the first, second, and third light emitting cells 112, 113, and 114, or is disposed under the first, second, third, light emitting cells 112, 113, and 114. It may be connected to the reflective layer 62. The second connector c3 may be connected to the second electrode 60 disposed under the second, third, and fourth light emitting cells 112, 113, and 114 through the second insulating layer 40. The third connector c4 may overlap the first recess h1 of the second to fourth light emitting cells 112, 113, and 114 in a vertical direction.

The third connection part c4 penetrates through the second insulating layer 40 and is disposed in the first recess h1 of the second to fourth light emitting cells 112, 113, and 114 and the first contact electrode c1. Can be connected. In an embodiment, the first and third connectors c2 and c4 may function as first electrodes, extend into the first recess h1 of each light emitting cell, and may be electrically connected to each light emitting cell.

As shown in FIG. 4, the protrusion p2 overlapping the first protrusion p1 in the vertical direction among the connection electrodes 85, 86, and 87 may protrude in the direction of the first protrusion p1. The protrusion p2 may be disposed higher than a lower surface of the light emitting cells 111, 112, 113, and 114 or a lower surface of the second conductive semiconductor layer 13. Since the protrusion p2 is disposed higher than the lower surface of the light emitting cell or the lower surface of the second conductive semiconductor layer, the side leakage light may be reflected. That is, the protrusion p2 may be arranged to surround the lower circumference of the light emitting cells 111, 112, 113, and 114, thereby improving reflection efficiency.

Referring to FIG. 4, an upper surface area of each of the first to third connection electrodes 85, 86, and 87 may be smaller or larger than an upper surface area of each of the second, third, and fourth light emitting cells 112, 113, and 114. An upper surface area of each of the first to third connection electrodes 85, 86, and 87 may be 50% or more of an upper surface area of each of the second, third, and fourth light emitting cells 112, 113, and 114, for example, 50% to 120%. Can be placed in a range. The width b1 of each of the first to third connection electrodes 85, 86, and 87 may be smaller than the length b2. The width b1 and the length b2 may be lengths in an orthogonal direction. Each of the first to third connection electrodes 85, 86, and 87 may overlap with the adjacent light emitting cells 111, 112, 113, and 114 in a vertical direction. The second connection portion c3 of each of the first to third connection electrodes 85, 86, and 87 may have a length (eg, b1) smaller than the width b0 of the first to third light emitting cells 111, 112, and 113. Can be. The second connection portion c3 of each of the first to third connection electrodes 85, 86, and 87 may be larger than a distance between the first recess h1 disposed in each of the light emitting cells 111, 112, 113, and 114. The second connection portion c3 of each of the first to third connection electrodes 85, 86, and 87 may have a circular shape or a polygonal shape. The length (eg b1) of each of the second connectors c3 may be disposed to be longer than an interval between at least two first recesses h1. Alternatively, the second connector c3 may be 50% or more of the length b0 of one side of the light emitting cells 111, 112, 113, and 114. The second connector c3 may have a plurality of contacts spaced apart from each other under the light emitting cells 111, 112, 113, and 114, and may be connected to the second electrode 60. The second connection portion c3 of the connection electrodes 85, 86, and 87 are disposed in a length corresponding to the length b0 of the light emitting cells 111, 112, 113, and 114, or distributed therein, and thus, through the first recess r1. The current transmitted to the first conductive semiconductor layer 11 may be diffused and transferred through the second electrode 60 and the second connection part c3 in contact with the second conductive semiconductor layer 13.

Therefore, the current is diffused in the lower portions of the light emitting cells 111, 112, 113, and 114, thereby preventing the problem of breakage at different electrode interfaces at high voltage or high current. That is, the current aggregation problem can be prevented at the lower portions of the light emitting cells 111, 112, 113, and 114. In addition, optical interference between the light emitting cells 111, 112, 113, and 114 can be prevented, thereby improving the brightness.

The second connector c3 and the third connector c4 may be made of the same material as or different from those of the connection electrodes 85, 86, and 87. The connection electrodes 85, 86, and 87 may be made of the same material as the first electrode 83. The fourth connector c4 may be connected to the first contact electrode c1 in the first recess h1. The connection electrodes 85, 86, and 87 may be formed after forming the second insulating layer 40. The first connection part c2 and the third connection part c4 may be formed of the same material.

A third insulating layer 50 may be disposed between the connection electrodes 85, 86 and 87 and the conductive substrate 81. A part g1 of the third insulating layer 50 is connected between the first electrode 83 and the connection electrodes 85, 86 and 87, or the protrusions g2 and g3 are connected to the first recess h1. ) And protrude in the gap 115 direction. Here, the protrusions g2 and g3 may be disposed in the lower recesses r2 and r3 of the connection electrodes 85, 86 and 87.

5 is a modified example of FIG. 3.

Referring to FIG. 5, a reflector Ra may be disposed on the gap 115 between the light emitting cells 111, 112, 113, and 114. The reflector Ra may reflect light incident in an area between two adjacent light emitting cells 111, 112, 113, and 114. The reflective part Ra may be disposed on the first insulating part 31 of the first insulating layer 30. A lower surface width of the reflective part Ra may be smaller than an upper surface width of the first insulating part 31 of the first insulating layer 30. The inclined surface of the reflector Ra may be inclined in the range of 40 degrees to 70 degrees, thereby reflecting the incident light upward. The height of the reflector Ra may be arranged in the range of 5 micrometers or more, for example, 5 to 20 micrometers. The height of the reflector Ra may be greater than or equal to 50% of the thickness of the first conductive semiconductor layer 11 to reflect light traveling in the lateral direction of the light emitting cells 111, 112, 113, and 114.

Referring to FIG. 6, an external recess r1 may be disposed in a lower region between the light emitting cells 111, 112, 113, and 114 and an outer lower region of each of the light emitting cells 111, 112, 113, and 114. The external recess r1 is disposed along a lower circumference of each of the light emitting cells 111, 112, 113, and 114, thereby preventing a current leakage problem at an edge portion of the light emitting cells 111, 112, 113, and 114. At least one of the first and second insulating layers 30 and 40 may be disposed in the external recess r1. The structure of the outer recess r1 will be referred to the structures of FIGS. 3 and 5.

7 is a plan view illustrating another example of a contact electrode of the light emitting device of FIG. 1. The configuration of FIG. 7 can be selectively applied to the above configuration.

Referring to FIG. 7, the first contact electrode c1 and the first recess h1 disposed under each of the light emitting cells 111, 112, 113, and 114 may be disposed to have a long length b5 in a second direction perpendicular to the first direction. Can be. The first contact electrode c1 and the first recess h1 may have the same length and may overlap at least a portion in the first direction. Accordingly, the first contact electrode c1 may be uniformly distributed in all areas of the light emitting cells 111, 112, 113, and 114, thereby spreading current. The length b5 of the first contact electrode c1 may be disposed in a range of 10% or more, for example, 10% to 60% of the length b0 of one side of each of the light emitting cells 111, 112, 113, and 114. The length b5 of the first contact electrode c1 may be smaller than the length of the second connection part c3 of each connection electrode.

FIG. 8 is a plan view illustrating a modified example of the contact electrode of the light emitting device of FIG. 7. The configuration of FIG. 8 can be selectively applied to the above configuration.

Referring to FIG. 8, the first contact electrode c1 and the first recess h1 disposed under each of the light emitting cells 111, 112, 113, and 114 may be disposed to have a long length b5 in at least one or two directions. The first contact electrode c1 and the first recess h1 may have the same length and may overlap at least a portion in the first and second directions. Accordingly, the first contact electrode c1 may be uniformly distributed in all areas of the light emitting cells 111, 112, 113, and 114, thereby spreading current. The length b5 of the first contact electrode c1 may be disposed in a range of 10% or more, for example, 10% to 60% of the length b0 of one side of each of the light emitting cells 111, 112, 113, and 114. The length b5 of the first contact electrode c1 may be smaller than the length of the second connection part c3 of each connection electrode.

The first contact electrode c1 and the first recess h1 may be disposed in a direction orthogonal to each other under the light emitting cells 111, 112, 113, and 114. For example, the first contact electrode c1 and the first recess h1 disposed under the first and second light emitting cells 111 and 112 may be disposed in directions perpendicular to each other, for example, the third and fourth light emitting cells. The first contact electrode c1 and the first recess h1 disposed below the 113 and 114 may be disposed in directions perpendicular to each other. For example, the first contact electrode c1 and the first recess h1 disposed under the second and third light emitting cells 112 and 113 are disposed in directions perpendicular to each other, for example, the first and fourth light emitting cells. The first contact electrode c1 and the first recess h1 disposed below the 111 and 114 may be disposed in directions perpendicular to each other. A plurality of first contact electrodes c1 disposed on each of the light emitting cells 111, 112, 113, and 114 may be disposed in a direction in which current flows. For example, when the first contact electrode c1 is disposed in the first light emitting cell 111, the first contact electrode c1 may be disposed to have a long length in the direction of the second light emitting cell in the first light emitting cell. The first contact electrode c1 disposed in the last fourth light emitting cell 114 may be disposed to have a long length in the direction of the second light emitting cell 111.

9 is a plan view of a light emitting device having a plurality of light emitting cells according to another embodiment of the present invention. The configuration disclosed in FIGS. 1 to 8 can be applied to FIG. 9.

Referring to FIG. 9, in the light emitting device, a plurality of light emitting cells 131, 132, and 133 may be spaced apart from each other in a first direction x. Each of the light emitting cells 131, 132, and 133 may have a length longer in a second direction than a length in a first direction, and the first contact electrodes c31, c32, c33 and the first recess h1 may have a second length. It can be arranged with a long length in the direction. The second connection portion c3 of the connection electrodes 88 and 89 may be disposed to have a long length in the second direction or longer than the second direction lengths of the first contact electrodes c31, c32, and c33. As a result, current between regions between adjacent light emitting cells 131, 132, and 133 may be diffused.

A lower portion of the gap 115 between the light emitting cells 131, 132, and 133 may be disposed to have a structure in which the first insulating portion 31 of the first insulating layer 30 protrudes, or a reflecting portion may be disposed.

10 is another example of FIG. 9.

Referring to FIG. 10, the plurality of pads 91 and 92 may be connected in series with a group of the plurality of light emitting cells 131, 132 and 133. When connected in series, the plurality of pads 91 and 92 may be connected to the first and third light emitting cells 131 and 133. As another example, a plurality of pads 91 and 92 may be connected to the second electrode of the third light emitting cell 133 to distribute the power path.

As another example, when the plurality of light emitting cells 131, 132, 133 are connected in parallel to each other, the plurality of pads 91, 92 may be connected in parallel with each of the light emitting cells 131, 132, 133.

When the plurality of pads 91 and 92 are provided, the lower conductive substrate may be connected to any one of the light emitting cells, or may function as a simple heat dissipation member.

<Light emitting device package>

11 is a view showing a light emitting device package having the light emitting device disclosed above.

Referring to FIG. 11, the light emitting device package includes a support member 510, a reflective member 511 having a cavity 512 on the support member 510, a top of the support member 510, and a cavity 512. Light emitting element 100. And a light transmissive film 515 on the support member 510.

The support member 510 may be a resin based printed circuit board (PCB), silicon based on silicon or silicon carbide (SiC), ceramic based on aluminum nitride (AlN), or polyphthal. It may be formed of at least one of a resin series such as amide (Polyphthalamide: PPA), a liquid crystal polymer (PCB), and a metal core PCB (MCPCB) having a metal layer on the bottom thereof, but is not limited thereto.

The support member 510 may include a first pad part 531, a second pad part 533, a first connection member 538, a second connection member 539, a first frame 535, and a second frame ( 537). The first pad part 531 and the second pad part 533 are disposed on the bottom of the support member 510 so as to be spaced apart from each other. The first frame 535 and the second frame 537 are spaced apart from each other on the upper surface of the support member 510. The first connection member 538 may be disposed inside or on the first side surface of the support member 510 and connects the first pad part 531 and the first frame 535 to each other. The second connection member 539 may be disposed inside or on the second side surface of the support member 510, and connects the second pad part 533 and the second frame 537 to each other.

The first pad part 531, the second pad part 533, the first frame 535, and the second frame 537 may be formed of a metal material, for example, titanium (Ti), copper (Cu), or nickel ( Ni, gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), or may be formed of an optional alloy thereof. It may be formed of a single metal layer or a multilayer metal layer.

The first connection member 538 and the second connection member 539 include at least one of a via, a via hole, and a through hole.

The reflective member 511 may be disposed around the cavity 512 on the support member 510 to reflect the ultraviolet light emitted from the light emitting device 100.

The reflective member 511 may be a resin based printed circuit board (PCB), silicon based on silicon (silicon) or silicon carbide (silicon carbide (SiC)), ceramic based on AlN (aluminum nitride; AlN), or polyphthalamide. It may be formed of at least one of a resin series such as (polyphthalamide: PPA) and a liquid crystal polymer (Liquid Crystal Polymer), but is not limited thereto. The support member 510 and the reflective member 511 may include a ceramic-based material, and the ceramic-based material may have a higher heat dissipation efficiency than the resin material.

The light emitting device 100 may be disposed on the second frame 537 or on the support member 510 and electrically connected to the first frame 535 and the second frame 537. do. The light emitting device 100 may be connected to the first frame 535 by a wire. The light emitting device 100 may emit an ultraviolet wavelength.

The light transmissive film 515 is disposed on the cavity 512 and emits light emitted from the light emitting device 100. The light transmissive film 515 may include a glass material, a ceramic material, or a light transmissive resin material. In addition, an optical lens or a phosphor layer may be further disposed on the cavity 512, but is not limited thereto.

The light emitting device or the light emitting device package according to the embodiment may be applied to a light unit. The light unit is an assembly having one or more light emitting devices or light emitting device packages, and may include an ultraviolet lamp.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be interpreted that the contents related to such a combination and modification are included in the scope of the present invention.

In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to these modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

11: first conductivity type semiconductor layer
12: active layer
13: second conductivity type semiconductor layer
30,40,50: insulation layer
60: second electrode
61: contact layer
62: reflective layer
c1: first contact electrode
h1: first recess
r1: external recess
81: conductive substrate
83: first electrode
85,86,87: connecting electrode
100: light emitting element
111,112,113,114: light emitting cells

Claims (13)

Conductive substrates;
A plurality of light emitting cells disposed on the conductive substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer and spaced apart from each other; And
And a first insulating layer disposed between the plurality of light emitting cells and the conductive substrate.
The first insulating layer includes a first insulating portion disposed between the plurality of light emitting cells,
The first insulating part includes a first protrusion protruding from the conductive substrate toward a top surface of the plurality of light emitting cells;
The upper surface of the first protrusion is higher than the upper surface of the plurality of active layers and the first conductive type light emitting device disposed. The method of claim 1, further comprising a plurality of first electrodes disposed between the plurality of light emitting cells and the conductive substrate,
The first electrode includes a second protrusion that overlaps the first insulation in a vertical direction.
And the second protrusion is disposed higher than a lower surface of the light emitting cell or a lower surface of the second conductive semiconductor layer. The method of claim 2,
A first recess disposed in each of the plurality of light emitting cells,
The first recess penetrates from a lower surface of the second conductive semiconductor layer to a lower portion of the first conductive semiconductor layer.
The first electrode extends into the first recess and is electrically connected to the first conductive semiconductor layer. The method of claim 3,
The plurality of light emitting cells includes first, second and third light emitting cells spaced apart from each other,
The first to third light emitting cells are electrically connected to a second electrode disposed below,
A second electrode connected to the first light emitting cell is connected to a first electrode connected to the second light emitting cell,
And a second electrode connected to the second light emitting cell is connected to a first electrode connected to a third light emitting cell. The method of claim 4, wherein
The second light emitting cell is disposed between the first and third light emitting cells,
The first protrusion part is disposed on at least two side surfaces of the second light emitting cell. The method of claim 4, wherein
The second light emitting cell is disposed between the first and third light emitting cells,
The first protrusion part is disposed in an area where the second light emitting cell and the first light emitting cell face each other, and a region in which the second light emitting cell and the third light emitting cell face each other. The method according to any one of claims 3 to 6,
The first insulating layer includes a second insulating portion disposed in the first recess,
The upper surface width of the first insulating portion is wider than the gap between the light emitting cells. The method of claim 7, wherein the outer side of each light emitting cell includes an outer recess having an inclined side,
And a depth of an outer recess of each of the light emitting cells is equal to a depth of the first recess. The method of claim 8, wherein the first electrode includes a connection portion connected to the first conductive semiconductor layer in the first recess,
The light emitting device has a length greater than a distance between the first recesses of the light emitting cells. The method of claim 9, wherein the length of the first recess has a long length in one direction,
The longitudinal direction of the first recess is disposed in the same direction in each of the light emitting cells,
The longitudinal direction of the first recess is disposed in a direction orthogonal to each other with respect to adjacent light emitting cells. The light emitting device according to any one of claims 3 to 6, wherein the upper surfaces of the plurality of light emitting cells include an uneven portion and a reflecting portion disposed in an area between the plurality of light emitting cells. The method according to any one of claims 2 to 6, wherein the plurality of light emitting cells are connected in series with each other,
And each of the plurality of light emitting cells emits a wavelength of 280 nm or less. Light emitting element;
A translucent film on the light emitting element; And
A support member below the light emitting device,
The light emitting device is a light emitting device package of claim 12.

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