KR20170064193A - 진공 초음파를 이용한 복합 세정 디버링 장치 - Google Patents
진공 초음파를 이용한 복합 세정 디버링 장치 Download PDFInfo
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- KR20170064193A KR20170064193A KR1020150169623A KR20150169623A KR20170064193A KR 20170064193 A KR20170064193 A KR 20170064193A KR 1020150169623 A KR1020150169623 A KR 1020150169623A KR 20150169623 A KR20150169623 A KR 20150169623A KR 20170064193 A KR20170064193 A KR 20170064193A
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- cleaning
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- cleaning liquid
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- 238000004140 cleaning Methods 0.000 claims abstract description 80
- 239000007788 liquid Substances 0.000 claims abstract description 39
- 238000005406 washing Methods 0.000 claims abstract description 29
- 230000007423 decrease Effects 0.000 claims abstract description 6
- 239000010419 fine particle Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 9
- 229910052736 halogen Inorganic materials 0.000 claims description 7
- 150000002367 halogens Chemical class 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 5
- 238000002604 ultrasonography Methods 0.000 abstract description 10
- 239000002131 composite material Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000007872 degassing Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000001464 adherent effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000011086 high cleaning Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000011805 ball Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010981 drying operation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/449—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428 involving the application of mechanical vibrations, e.g. ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
이를 구현하기 위한 본 발명은 내부에 세정액이 담겨지는 공간이 형성된 세정조, 상기 세정조의 바닥면 위에 설치되며 저면에 설치되어 있는 초음파진동자의 진동으로 상기 공간에 담겨진 세정액으로 초음파를 방출하여 상기 세정액에 침수되어 있는 피세정물을 초음파 세정하는 라운드형 진동판으로 구성한 진공 초음파를 이용한 복합 세정 디버링 장치에 있어서, 상기 라운드형 진동판은 외곽면에서 센터를 향할수록 높이가 점차적으로 낮아지도록 오목한 돔 형태로 성형한 것을 기술적 요지로 한다.
Description
22: 미세입자 30: 리프팅수단
34: 승강로드 36: 덮개부재
38: 브라켓 40: 할로겐램프
50: 라운드형 진동판 50a: 외곽면
50b: 센터 60: 초음파진동자
70: 고주파발진기 80: 진공수단
200: 피세정물
Claims (4)
- 내부에 세정액(20)이 담겨지는 공간(12)이 형성된 세정조(10), 상기 세정조(10)의 바닥면 위에 설치되며 저면에 설치되어 있는 초음파진동자(60)의 진동으로 상기 공간(12)에 담겨진 세정액(20)으로 초음파를 방출하여 상기 세정액(20)에 침수되어 있는 피세정물(200)을 초음파 세정하는 라운드형 진동판(50)으로 구성한 진공 초음파를 이용한 복합 세정 디버링 장치에 있어서,
상기 라운드형 진동판(50)은 외곽면(50a)에서 센터(50b)를 향할수록 높이가 점차적으로 낮아지도록 오목한 돔 형태로 성형함을 특징으로 하는 진공 초음파를 이용한 복합 세정 디버링 장치.
- 제 1항에 있어서,
상기 세정액(20)에는 미세입자(22)가 혼합됨을 특징으로 하는 진공 초음파를 이용한 복합 세정 디버링 장치.
- 제 1항 또는 제 2항에 있어서,
상기 세정조(10)의 일측에 설치되며 구동원의 동력으로 상, 하 이동하는 승강로드(34);
상기 승강로드(34)의 선단에 설치되며 상기 세정조(10)의 개방된 상단을 덮어 밀폐시키는 덮개부재(36);
상기 덮개부재(36)의 하면 일측에 설치되며 상기 피세정물(200)을 거치하는 브라켓(38) 및 ;
상기 세정조(10)의 일측에 연결 설치되며 상기 세정조(10)의 내부 공간(12)을 진공 감압하는 진공수단(80)이 더 포함되어 설치됨을 특징으로 하는 진공 초음파를 이용한 복합 세정 디버링 장치.
- 제 3항에 있어서,
상기 덮개부재(36)의 저면에는 할로겐램프(40)가 더 설치됨을 특징으로 하는 진공 초음파를 이용한 복합 세정 디버링 장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020150169623A KR20170064193A (ko) | 2015-12-01 | 2015-12-01 | 진공 초음파를 이용한 복합 세정 디버링 장치 |
Applications Claiming Priority (1)
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---|---|---|---|
KR1020150169623A KR20170064193A (ko) | 2015-12-01 | 2015-12-01 | 진공 초음파를 이용한 복합 세정 디버링 장치 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20170064193A true KR20170064193A (ko) | 2017-06-09 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020150169623A Ceased KR20170064193A (ko) | 2015-12-01 | 2015-12-01 | 진공 초음파를 이용한 복합 세정 디버링 장치 |
Country Status (1)
Country | Link |
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KR (1) | KR20170064193A (ko) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108325936A (zh) * | 2018-04-13 | 2018-07-27 | 苏州浦灵达自动化科技有限公司 | 一种智能机器人零部件生产用清洗装置 |
CN109013546A (zh) * | 2018-09-10 | 2018-12-18 | 盐城市自强化纤机械有限公司 | 一种移动方便的真空清洗炉 |
CN112974396A (zh) * | 2021-01-22 | 2021-06-18 | 北京北方华创微电子装备有限公司 | 半导体清洗设备及晶片清洗方法 |
CN114733842A (zh) * | 2022-04-11 | 2022-07-12 | 卓尔半导体设备(苏州)有限公司 | 一种节能高效的超声波真空清洗单元 |
CN118768542A (zh) * | 2024-08-09 | 2024-10-15 | 宁波丰灵机械有限公司 | 一种铝压铸件表面毛刺去除装置 |
-
2015
- 2015-12-01 KR KR1020150169623A patent/KR20170064193A/ko not_active Ceased
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108325936A (zh) * | 2018-04-13 | 2018-07-27 | 苏州浦灵达自动化科技有限公司 | 一种智能机器人零部件生产用清洗装置 |
CN109013546A (zh) * | 2018-09-10 | 2018-12-18 | 盐城市自强化纤机械有限公司 | 一种移动方便的真空清洗炉 |
CN109013546B (zh) * | 2018-09-10 | 2024-01-26 | 盐城市自强化纤机械有限公司 | 一种移动方便的真空清洗炉 |
CN112974396A (zh) * | 2021-01-22 | 2021-06-18 | 北京北方华创微电子装备有限公司 | 半导体清洗设备及晶片清洗方法 |
CN112974396B (zh) * | 2021-01-22 | 2022-07-22 | 北京北方华创微电子装备有限公司 | 半导体清洗设备及晶片清洗方法 |
CN114733842A (zh) * | 2022-04-11 | 2022-07-12 | 卓尔半导体设备(苏州)有限公司 | 一种节能高效的超声波真空清洗单元 |
CN118768542A (zh) * | 2024-08-09 | 2024-10-15 | 宁波丰灵机械有限公司 | 一种铝压铸件表面毛刺去除装置 |
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