KR20150116448A - 네마틱 액정 조성물 및 이것을 사용한 액정 표시 소자 - Google Patents
네마틱 액정 조성물 및 이것을 사용한 액정 표시 소자 Download PDFInfo
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Abstract
Description
Claims (12)
- 제1항에 있어서,
25℃에 있어서의 유전율 이방성(Δε)이 -2.0∼-8.0의 범위이며, 20℃에 있어서의 굴절률 이방성(Δn)이 0.08∼0.14의 범위이며, 20℃에 있어서의 점도(η)가 10∼30mPa·s의 범위이며, 20℃에 있어서의 회전 점성(γ1)이 60∼130mPa·s의 범위이며, 네마틱상-등방성 액체상 전이 온도(Tni)가 60℃∼120℃의 범위인 액정 조성물. - 제1항 또는 제2항에 있어서,
제3 성분으로서, 일반식(Ⅱ-1) 및 일반식(Ⅱ-2)
(식 중, R1 및 R2는, 각각 독립적으로 탄소 원자수 1∼10의 알킬기, 탄소 원자수 1∼10의 알콕시기, 탄소 원자수 2∼10의 알케닐기 또는 탄소 원자수 2∼10의 알케닐옥시기를 나타내고, R1 및 R2 중에 존재하는 1개의 -CH2- 또는 인접하고 있지 않은 2개 이상의 -CH2-는 각각 독립적으로 -O- 및/또는 -S-로 치환되어도 되며, 또한, R1 및 R2 중에 존재하는 1개 또는 2개 이상의 수소 원자는 각각 독립적으로 불소 원자 또는 염소 원자로 치환되어도 된다. 환A 및 환B는, 각각 독립적으로 트랜스-1,4-시클로헥실렌기, 1,4-페닐렌기, 2-플루오로-1,4-페닐렌기, 3-플루오로-1,4-페닐렌기, 3,5-디플루오로-1,4-페닐렌기, 2,3-디플루오로-1,4-페닐렌기, 1,4-시클로헥세닐렌기, 1,4-비시클로[2.2.2]옥틸렌기, 피페리딘-1,4-디일기, 나프탈렌-2,6-디일기, 데카히드로나프탈렌-2,6-디일기 또는 1,2,3,4-테트라히드로나프탈렌-2,6-디일기를 나타낸다. Z1 및 Z2는, 각각 독립적으로, -OCH2-, -CH2O-, -CF2O-, -OCF2-, -CH2CH2-, -CF2CF2- 또는 단결합을 나타낸다)으로 표시되는 화합물군에서 선택되는 화합물을 1종 또는 2종 이상 함유하는 액정 조성물. - 제1항 내지 제3항 중 어느 한 항에 있어서,
제4 성분으로서, 일반식(Ⅲ-A)∼일반식(Ⅲ-J)
(식 중, R5는, 탄소 원자수 1∼5의 알킬기 또는 탄소 원자수 2∼5의 알케닐기, R6은, 탄소 원자수 1∼5의 알킬기, 탄소 원자수 1∼5의 알콕시기, 탄소 원자수 2∼5의 알케닐기 또는 탄소 원자수 2∼5의 알케닐옥시기를 나타낸다. 단, 일반식(Ⅲ-A)으로 표시되는 화합물에 있어서, 식(I-1) 및 식(I-2)으로 표시되는 화합물과 동일한 화합물은 포함하지 않는다)으로 표시되는 화합물군에서 선택되는 화합물을 1종 또는 2종 이상 함유하는 액정 조성물. - 제3항 또는 제4항에 있어서,
일반식(Ⅱ-1)으로 표시되는 화합물과 일반식(Ⅱ-2)으로 표시되는 화합물을 동시에 함유하는 액정 조성물. - 제3항 내지 제6항 중 어느 한 항에 있어서,
일반식(Ⅱ-1) 및 일반식(Ⅱ-2) 중의 R1이 프로페닐기인 화합물의 군에서 선택되는 화합물을 1종 또는 2종 이상 함유하는 액정 조성물. - 제1항 내지 제7항 중 어느 한 항에 있어서,
중합성 화합물을 1종 또는 2종 이상 함유하는 액정 조성물. - 제8항에 있어서,
중합성 화합물이, 일반식(M)
(식 중, X201 및 X202는, 각각 독립적으로, 수소 원자, 메틸기 또는 -CF3기를 나타내고, Sp201 및 Sp202는, 각각 독립적으로, 단결합, 탄소 원자수 1∼8의 알킬렌기 또는 -O-(CH2)s-(식 중, s는 2∼7의 정수를 나타내고, 산소 원자는 환에 결합하는 것으로 한다)를 나타내고, 환M201, 환M202 및 환M203은, 각각 독립적으로, 트랜스-1,4-시클로헥실렌기(기 중의 1개 또는 비인접의 2개 이상의 -CH2-는 -O- 또는 -S-에 의해 치환되어 있어도 된다), 1,4-페닐렌기(기 중의 1개 또는 비인접의 2개 이상의 -CH=는 -N=에 의해 치환되어 있어도 된다), 1,4-시클로헥세닐렌기, 1,4-비시클로[2.2.2]옥틸렌기, 피페리딘-1,4-디일기, 나프탈렌-2,6-디일기, 데카히드로나프탈렌-2,6-디일기 또는 1,2,3,4-테트라히드로나프탈렌-2,6-디일기를 나타내고, 기 중의 수소 원자는, 각각 독립적으로, 불소 원자, -CF3기, 탄소 원자수 1∼10의 알킬기, 탄소 원자수 1∼10의 알콕시기 또는 식(R-1)∼식(R-15) 중 어느 하나에 의해 치환되어 있어도 되며,
Z201 및 Z202는, 각각 독립적으로, -OCH2-, -CH2O-, -COO-, -OCO-, -CF2O-, -OCF2-, -CH2CH2-, -CF2CF2-, -CH=CH-COO-, -CH=CH-OCO-, -COO-CH=CH-, -OCO-CH=CH-, -COO-CH2CH2-, -OCO-CH2CH2-, -CH2CH2-COO-, -CH2CH2-OCO-, -COO-CH2-, -OCO-CH2-, -CH2-COO-, -CH2-OCO-, -CY1=CY2-(식 중, Y1 및 Y2는, 각각 독립적으로, 불소 원자 또는 수소 원자를 나타낸다), -C≡C- 또는 단결합을 나타내고, n201은, 0, 1 또는 2를 나타내지만, 환M202 및 Z202가 각각 복수 존재할 경우, 각각 달라도 되며, 동일해도 된다)인 액정 조성물. - 제1항 내지 제9항 중 어느 한 항에 기재된 액정 조성물을 사용한 액정 표시 소자.
- 제1항 내지 제9항 중 어느 한 항에 기재된 액정 조성물을 사용한 액티브 매트릭스 구동용 액정 표시 소자.
- 제1항 내지 제9항 중 어느 한 항에 기재된 액정 조성물을 사용한 VA 모드, PSA 모드, PSVA 모드, IPS 모드 또는 ECB 모드용 액정 표시 소자.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013043990 | 2013-03-06 | ||
JPJP-P-2013-043990 | 2013-03-06 | ||
PCT/JP2014/054921 WO2014136654A1 (ja) | 2013-03-06 | 2014-02-27 | ネマチック液晶組成物及びこれを用いた液晶表示素子 |
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KR20150116448A true KR20150116448A (ko) | 2015-10-15 |
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KR (1) | KR20150116448A (ko) |
CN (1) | CN105026520B (ko) |
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KR102301504B1 (ko) * | 2015-01-12 | 2021-09-14 | 삼성디스플레이 주식회사 | 액정 조성물 및 이를 포함하는 액정 표시 장치 |
CN108350362A (zh) * | 2015-10-23 | 2018-07-31 | 捷恩智株式会社 | 液晶组合物及液晶显示元件 |
JP6848140B2 (ja) * | 2016-03-31 | 2021-03-24 | Jnc株式会社 | 液晶組成物および液晶表示素子 |
DE102017002925A1 (de) | 2016-04-21 | 2017-10-26 | Merck Patent Gmbh | Flüssigkristallines Medium |
WO2017212933A1 (ja) * | 2016-06-10 | 2017-12-14 | Dic株式会社 | 組成物及び液晶表示素子 |
JP6308414B1 (ja) * | 2016-10-25 | 2018-04-11 | Dic株式会社 | 液晶組成物及び液晶表示素子 |
CN108219801B (zh) * | 2016-12-15 | 2021-05-25 | 江苏和成显示科技有限公司 | 具有负介电各向异性的液晶组合物及其应用 |
CN113122271A (zh) * | 2019-12-30 | 2021-07-16 | 石家庄诚志永华显示材料有限公司 | 液晶组合物、液晶显示元件、液晶显示器 |
CN113913196B (zh) * | 2021-10-12 | 2024-04-09 | 重庆汉朗精工科技有限公司 | 一种快速响应液晶组合物及其应用 |
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-
2014
- 2014-02-26 TW TW103106443A patent/TWI623609B/zh active
- 2014-02-27 EP EP14760588.5A patent/EP2966150B1/en active Active
- 2014-02-27 WO PCT/JP2014/054921 patent/WO2014136654A1/ja active Application Filing
- 2014-02-27 JP JP2014543696A patent/JP6128660B2/ja active Active
- 2014-02-27 KR KR1020157023623A patent/KR20150116448A/ko not_active Ceased
- 2014-02-27 US US14/773,019 patent/US20160075947A1/en not_active Abandoned
- 2014-02-27 CN CN201480012325.XA patent/CN105026520B/zh active Active
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2015
- 2015-04-15 JP JP2015083364A patent/JP2015180729A/ja active Pending
Also Published As
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CN105026520A (zh) | 2015-11-04 |
JP2015180729A (ja) | 2015-10-15 |
EP2966150A1 (en) | 2016-01-13 |
EP2966150B1 (en) | 2020-08-05 |
US20160075947A1 (en) | 2016-03-17 |
JPWO2014136654A1 (ja) | 2017-02-09 |
WO2014136654A1 (ja) | 2014-09-12 |
JP6128660B2 (ja) | 2017-05-17 |
CN105026520B (zh) | 2018-06-08 |
TW201502250A (zh) | 2015-01-16 |
TWI623609B (zh) | 2018-05-11 |
EP2966150A4 (en) | 2016-12-28 |
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