KR20130138475A - Apparatus for treating a substrate - Google Patents

Abstract

An apparatus for processing a substrate is provided. The apparatus for processing the substrate includes a plasma boundary limiting unit. The plasma boundary limiting unit includes a first body and a second body which vertically moves with regard to the first body. The first body is combined with the second body to form a ring shape. The second body is fixed to a door assembly which opens or closes an opening part to input and output a substrate and vertically moves with the door assembly.

Description

Substrate Processing Unit {APPARATUS FOR TREATING A SUBSTRATE}

TECHNICAL FIELD The present invention relates to a substrate processing apparatus, and more particularly, to an apparatus and method for processing a substrate using plasma, and a plasma boundary limiting unit used therein.

Generally, the semiconductor manufacturing process is divided into various kinds of processes such as a deposition process, a photolithography process, an etching process, a polishing process, and a cleaning process. Of these, the deposition process, the etching process, and the like process the substrate using plasma. Some of the substrate processing apparatuses using plasma may have a confinement ring that confines the plasma so that the plasma in the process chamber remains in the vertical upper space of the wafer during the process.

In general, the confinement ring is provided to enclose the vertical upper space of the substrate and has an integral annular body. The plurality of conforming rings are provided so as to be spaced apart from each other in the vertical direction. The spacing between the confinement rings is relatively narrow so as to prevent the plasma from escaping through the gap therebetween.

However, the confinement ring interferes with the path of travel of the substrate as it enters and exits the process chamber. Therefore, the confinement ring moves to the standby position where the movement path of the substrate does not interfere with the substrate when the substrate enters and exits the process chamber by the ring driver.

Therefore, many processing steps are required since the conforming ring must move to the standby position before or after the opening of the substrate is carried out during the loading or unloading of the substrate.

Further, since the ring driver has to be provided for movement of the conforming ring, the structure of the apparatus is complicated.

Further, since the ring driver needs to move the whole of the conforming ring up and down, a large load is applied to the ring driver.

Embodiments of the present invention are to provide a substrate processing apparatus and method that can reduce the steps required to bring the substrate into or out of the process chamber.

In addition, embodiments of the present invention to provide a substrate processing apparatus and method that can reduce the time required to bring the substrate in or out of the process chamber.

In addition, embodiments of the present invention to provide a substrate processing apparatus and method that can reduce the number of components used for the movement of the confinement ring.

Embodiments of the present invention also provide a substrate processing apparatus and method capable of reducing the load required for the vertical movement of the conforming ring.

The problems to be solved by the present invention are not limited thereto, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

According to an embodiment of the present invention, a substrate processing apparatus is provided. The substrate processing apparatus includes a process chamber having an opening through which a substrate is entered and having a door assembly opening and closing the opening, a support unit positioned in the process chamber to support a substrate, and a gas supply unit supplying a process gas into the process chamber. A plasma generating unit for generating a plasma from the process gas and a plasma boundary limiting unit provided to surround a discharge space located above the support unit in the process chamber, thereby minimizing the escape of the plasma from the discharge space; plasma boundary limiter unit). The plasma boundary confinement unit includes a first body and a second body provided to be movable up and down relative to the first body in the process chamber. The first body and the second body are combined with each other to have a ring shape.

According to an example embodiment, the second body may be coupled to the door assembly, and may be moved up and down together with the door assembly.

In an example, the first body and the second body each include a ring body provided as part of the ring and a plurality of plates provided on one surface of the ring body. The plurality of plates may be spaced apart from each other along the longitudinal direction of the ring body such that gas in the discharge space flows out of the discharge space through a passage provided between adjacent plates.

The gaps between the plates along the longitudinal direction of the ring body may be provided equally.

Each of the plates may be provided perpendicular to the ring body.

The plate may be provided in a different thickness along the up and down direction so that the width of the passage is different in the up and down direction. The width of the passage may be provided with the lower side narrower than the upper side.

The first body and the second body may be combined with each other to form an annular ring shape. The plate may be provided with a length of the side parallel to the radial direction of the ring body longer than the length of the side perpendicular to the radial direction of the ring body.

The width of the plates may be provided equally along the longitudinal direction of the ring so that the distance between the plates along the radial direction of the ring body increases toward the outside of the discharge space. Optionally, the width of the plates may become thicker along the longitudinal direction toward the outside of the discharge space so that the spacing between the plates along the radial direction of the ring body is the same.

Spacing between the plates along the longitudinal direction of the ring body may be provided differently.

The lower end of the plate may be provided at a position adjacent to the upper end of the support unit. Optionally the bottom of the plate may be provided below the top of the support unit.

In another example, the plasma boundary confinement unit may have a plurality of plasma boundary confinement rings provided to be spaced apart from each other in the vertical direction, and each of the plasma boundary confinement rings may have the first body and the second body. have.

The apparatus may further include a bracket for coupling the second bodies of the plurality of plasma boundary confinement rings, wherein the bracket is coupled to the door assembly to move up and down together with the door assembly.

The door assembly may include an outer door provided outside the process chamber, an inner door provided inside the process chamber to face the outer door and coupled to the second body, and connecting the outer door and the inner door. It is provided with a coupling member, the outer door can be driven in the vertical direction by the door driver.

According to another example, a body driver for driving the second body in the vertical direction may be further provided.

The plasma boundary limiting unit may be provided of a conductive material, and the plasma boundary limiting unit may be installed to be in contact with the upper electrode so as to be electrically connected to the upper electrode.

The present invention also provides a plasma boundary confinement unit. The plasma boundary suggestion unit is used to minimize the escape of the plasma from the discharge space to the outside in the apparatus for processing the substrate using the plasma. The plasma boundary confinement unit includes a first body and a second body provided to be movable up and down with respect to the first body, wherein the first body and the second body have a ring shape in combination with each other.

The first body and the second body each include a ring body provided as part of the ring and a plurality of plates provided on one surface of the ring body, wherein a passage is provided between the inside and the outside of the ring body in the radial direction of the ring body. The plurality of plates may be spaced apart from each other along the longitudinal direction of the ring body.

The plate may be provided longer than the length of the side perpendicular to the radial direction of the ring body when the length of the side parallel to the radial direction of the ring body viewed from the top.

The present invention also provides a method of treating a substrate using plasma. According to the method, a plasma boundary limiting unit provided in a ring is provided so as to limit the discharge space in which the plasma is discharged in the process chamber, when the substrate enters and exits the process chamber, facing the opening of the process chamber through which the substrate enters and exits. The relative height is adjusted relative to the first body, which is the remainder of the ring, so that the second body, which is part of the ring in the region, is located at a different height than the opening, and the plasma is used to process the second body during the process. The relative height of the second body relative to the first body is adjusted such that is positioned at the same height as the first body.

The second body may be coupled with the door assembly that opens and closes the opening and may move together with the door.

Each of the first body and the first body includes a ring body provided as part of the ring and a plurality of plates provided on one surface of the ring body, wherein gas in the discharge space passes through a passage provided between adjacent plates. Through the discharge space can flow to the outside.

The intervals between the plates along the length direction of the ring body are different from each other, so that the etching rate for each region of the substrate may be adjusted.

Spaces between the plates in the vertical direction may be provided differently.

According to an embodiment of the present invention, since the plasma boundary limiting unit is divided into the first body and the second body and the first body is coupled to the door and moved up and down together with the door, the number of parts for moving the first body Can be reduced.

In addition, according to the embodiment of the present invention, it is possible to reduce the time and time required for bringing the substrate into or out of the process chamber.

Further, according to the embodiment of the present invention, since the plasma boundary limiting unit is separated into the first body and the second body and only the second body moves up and down when the substrate is moved in and out, the load on the second body have.

Further, according to the embodiment of the present invention, it is possible to smoothly exhaust gas in the discharge space by providing a plurality of plates provided along the longitudinal direction of the ring body.

In addition, according to embodiments of the present invention, the etching rate can be improved in the entire region of the substrate or the etching rate of each region of the substrate can be controlled according to the arrangement and shape of the plates.

1 is a perspective view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
2 and 3 are perspective views showing an example of the plasma boundary limiting unit of FIG.
FIG. 4 is a plan view schematically showing a state of coupling the plasma boundary limiting unit and the door assembly of FIG. 1;
FIGS. 5 to 8 are views sequentially illustrating a process of performing the process using the substrate processing apparatus of FIG. 1. FIG.
Figs. 9 to 11 are views showing a modified example of the substrate processing apparatus of Fig. 1, respectively.
12 to 22 are diagrams showing another example of the plasma boundary limiting unit, respectively.

Hereinafter, a substrate processing apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

1 is a cross-sectional view illustrating a substrate processing apparatus 10 according to an embodiment of the present invention. The substrate processing apparatus 10 processes the substrate W using plasma. In the embodiment of the present invention, an apparatus for etching a substrate W using plasma is taken as an example. However, the technical features of the present invention are not limited thereto, and may be applied to various kinds of apparatuses for treating the substrate W using plasma.

1, a substrate processing apparatus 10 includes a process chamber 100, a support unit 200, a gas supply unit 300, a plasma generation unit 400, and a plasma boundary restriction unit 500 .

The process chamber 100 has a space for performing a process therein. An exhaust hole 103 is formed in the bottom surface of the process chamber 100. The exhaust hole 103 is connected to the exhaust line 121 on which the pump 122 is mounted. The reaction byproducts generated in the process and the gas staying in the process chamber 100 may be discharged to the outside through the exhaust line 121. In addition, the internal space of the process chamber 100 is reduced to a predetermined pressure by the exhaust process. The exhaust hole 103 is provided at a position in direct communication with the outer space of the plasma boundary limiting unit 500 described later in the process chamber 100. According to an example, the exhaust hole 103 may be provided at a vertically lower position of the plasma boundary limiting unit 500.

An opening 104 is formed in the sidewall of the process chamber 100. The opening 104 serves as a passage through which the substrate (W in FIG. 6) enters and exits the process chamber 100. The opening 104 is opened and closed by the door assembly 140. According to one example, the door assembly 140 has an outer door 142, an inner door 144, and a connecting member 146. The outer door 142 is provided on the outer wall of the process chamber 100. The inner door 144 is provided on the inner wall of the process chamber 100. The outer door 142 and the inner door 144 are fixedly coupled to each other by the connecting member 146. The connecting member 146 is provided to extend from the inside to the outside of the process chamber 100 through the opening 104. The door driver 148 moves the outer door 142 in the vertical direction. The door driver 148 may include a hydraulic cylinder or a motor.

The support unit 200 is located in a lower region of the inside of the process chamber 100. The support unit 200 supports the substrate W by the electrostatic force. Alternatively, the support unit 200 may support the substrate W in various ways such as mechanical clamping.

The support unit 200 has a base 220, an electrostatic chuck 240, and a ring assembly 260. The electrostatic chuck 240 supports the substrate W on its upper surface by electrostatic force. The electrostatic chuck 240 is fixedly coupled to the base 220. The ring assembly 260 is provided so as to surround the periphery of the electrostatic chuck 240. In one example, the ring assembly 260 has a focus ring 262 and an insulating ring 264. The focus ring 262 is provided to surround the electrostatic chuck 240 and concentrates the plasma on the substrate W. An insulating ring 264 is provided to surround the focus ring 262. Optionally, the ring assembly 260 may include an edge ring (not shown) provided in close contact with the focus ring 262 to prevent the side of the electrostatic chuck 240 from being damaged by the plasma. Unlike the above, the structure of the ring assembly 260 may be variously changed.

For example, the electrostatic chuck 240 may be made of a ceramic material, the focus ring 262 may be made of silicon, and the insulating ring 264 may be made of quartz. The electrostatic chuck 240 or the base 220 may be provided with a heating member 282 and a cooling member 284 for keeping the substrate W at a processing temperature during the process. The heating member 282 may be provided as a hot wire. The cooling member 284 may be provided as a cooling line through which the refrigerant flows. According to one example, the heating member 282 may be provided to the electrostatic chuck 240, and the cooling member 284 may be provided to the base 220.

The gas supply unit 300 supplies a process gas into the process chamber 100. The gas supply unit 300 includes a gas storage unit 310, a gas supply line 320, and a gas inflow port 330. The gas supply line 320 connects the gas storage 310 and the gas inflow port 330. The gas supply line 320 supplies the process gas stored in the gas storage 310 to the gas inflow port 330. The gas supply line 320 may be provided with a valve 322 for opening and closing the passage or adjusting the flow rate of the fluid flowing through the passage.

The plasma generation unit 400 generates a plasma from the process gas staying in the discharge space 102. The discharge space 102 corresponds to an upper region of the support unit 200 in the process chamber 100. The plasma generation unit 400 may have a capacitive coupled plasma source.

The plasma generation unit 400 includes an upper electrode 420, a lower electrode 440, and a high frequency power source 460. The upper electrode 420 and the lower electrode 440 are provided to face each other in the vertical direction. The upper electrode 420 has a showerhead 422 and a ring member 424. The shower head 422 is positioned opposite the electrostatic chuck 240 and may be provided with a larger diameter than the electrostatic chuck 240. The shower head 422 is formed with holes 422a for injecting gas. A ring member 424 is provided to surround the shower head 422. The ring member 424 may be provided to be in contact with the shower head 422 so as to be electrically connected to the shower head 422. The ring member 424 may be provided in close contact with the shower head 422. According to one example, the shower head 422 may be provided in silicon. Optionally, the shower head 422 may be provided with a metal material. The ring member 424 may be provided in the same material as the shower head 422. The lower electrode 440 may be provided in the electrostatic chuck 240. In an example, the upper electrode 420 may be grounded 429, and the high frequency power source 460 may be connected to the lower electrode 440. Optionally, the high frequency power source 460 may be connected to the upper electrode 420, and the lower electrode 440 may be grounded. Also, a high frequency power source 460 may be selectively connected to both the upper electrode 420 and the lower electrode 440. According to an example, the high frequency power source 460 may continuously apply power or pulse power to the upper electrode 420 or the lower electrode 440.

A plasma boundary limiter unit 500 has a ring shape and is provided to surround the discharge space 102. The plasma boundary limiting unit 500 suppresses the plasma from escaping from the discharge space 102 to the outside thereof. The plasma boundary limiting unit 500 has a first body 520 and a second body 540.

FIGS. 2 and 3 are perspective views showing an example of the plasma boundary limiting unit 500. FIG. FIG. 2 shows a state where the first body 520 and the second body 540 are positioned at the same height. FIG. 3 shows a state where the first body 520 and the second body 540 are positioned at different heights Lt; / RTI > Referring to FIGS. 2 and 3, the first body 520 and the second body 540 have a ring shape in combination with each other. When the substrate W is a disk-shaped semiconductor wafer, the first body 520 and the second body 540 may be provided in an annular shape in combination with each other. In the process chamber 100, the second body 540 is provided in an area opposed to the opening 104 through which the substrate W enters and exits. The first body 520 and the second body 540 have arc shapes. The first body 520 is provided with a greater central angle than the second body 540.

The first body 520 and the second body 540 each include a ring body 562 provided as a part of a ring and a plurality of plates 564 coupled thereto. The ring body 562 has a rounded rod shape in an arc shape and can be provided on substantially the same plane. The plate 564 may be provided so as to protrude downward on the bottom surface of the ring body 562. The plate 564 may have a rectangular plate shape. Plate 564 has a length side (L), a width side (W), and a height side (H). The length side L of the plate 564 is provided substantially parallel to the radial direction of the ring body 562. The width W of the plate 564 is provided generally perpendicular to the radial direction of the ring body 562 when viewed from above. The height side H of the plate 564 is generally provided in the up-and-down direction perpendicular to the ring body 562. The length L of the plate 564 is provided longer than the width W of the plate 564. [ The width of the plate 564 may be equally provided along the longitudinal direction of the plate 564.

A plurality of plates 564 are provided. The plates 564 have the same shape and size. The plates 564 are provided spaced apart from each other along the radial direction of the ring body 562. A space provided between the adjacent plates 564 is provided as a passage through which the gas in the discharge space 102 is discharged. The spacing between the plates 564 may be provided substantially identical to one another. The spacing between the plates 564 may be provided to such an extent that plasma in the discharge space 102 can be prevented from escaping through the space provided between the plates 564. [ The spacing between the plates in the figures of the present invention is shown exaggerated in practice.

The lower end of the plate 564 may be located at the same height as or adjacent to the upper surface of the support unit 200. For example, the lower end of the plate 564 may be located at the same height as or adjacent to the upper surface of the insulating ring 264. Alternatively, the lower end of the plate 564 may be provided higher than the support unit 200.

According to the embodiment of FIG. 1, the space between adjacent plates 564 is radially and downwardly open, respectively. A part of the gas flowing from the discharge space 102 to the space between the plates 564 flows along the radial direction of the ring body 562 and is discharged outside the plate 564. [ Other portions of the gas may also flow downward in the space between the plates 564 and out of the plate 564. Therefore, the gas can be exhausted more smoothly than a general reclamation ring in which a plurality of rings are stacked up and down.

The substrate W is introduced into the discharge space 102 in the process chamber 100 through the opening 104 from the outside of the process chamber 100 and placed on the lift pin 170 provided to be movable up and down , And is placed in the support unit 200 by the descent of the lift pin 170. Since the first body 520 and the second body 540 have a ring shape in a state where they are coupled to each other, they interfere with the movement path of the substrate W.

In this embodiment, the second body 540 and the first body 520 are provided such that their relative heights are changeable. For example, the first body 520 may be fixedly installed in the process chamber 100, and the second body 540 may be provided movably in the up and down direction. When the substrate W is moved through the opening 104, the second body 540 is positioned so as not to interfere with the movement path of the substrate W as shown in FIG. 3, 520).

FIG. 4 is a plan view schematically showing a coupled state of the plasma boundary limiting unit 500 and the door assembly 140 of FIG. Referring to FIG. 4, the second body 540 may be fixedly coupled to the door assembly 140 and moved up and down together with the door assembly 140. According to one example, the second body 540 is fixedly coupled to the inner door 144. In this case, the door assembly 140 and the second body 540 can be moved together by the door driver 148 without a separate actuator for driving the second body 540. The second body 540 is generally positioned flush with the first body 520 with the opening 104 closed by the door assembly 140 and the opening 104 is opened by the door assembly 140 The second body 540 is positioned at a different height from the first body 520. [ For example, the second body 540 may be positioned lower than the first body 520 with the opening 104 open.

In addition, the plasma boundary limiting unit 500 may be provided to be in contact with the upper electrode 420 to be electrically connected to the upper electrode 420. According to one example, the upper surface of the first body 510 may be provided to be in contact with the lower surface of the ring member 424. [ The plasma boundary limiting unit 500 may be provided with a conductive material. According to an example, the plasma boundary limiting unit 500 may be provided with the same material as the upper electrode 420. For example, the plasma boundary limiting unit 500 may be provided with silicon or a metal material. In this case, the plasma boundary limiting unit 500 can perform a function similar to the upper electrode 420. Since the sum of the areas of the plasma boundary limiting unit 500 and the upper electrode 420 is larger than the area of the lower electrode, the plasma is more concentrated in the region adjacent to the lower electrode 440. This improves the etching rate of the substrate.

According to another embodiment, the plasma boundary limiting unit 500 may be provided with an insulating material. For example, the plasma boundary limiting unit 500 may be provided in quartz. In addition, the plasma boundary limiting unit 500 may be provided apart from the upper electrode 420.

5 to 8 are views sequentially illustrating a process of performing the process using the substrate processing apparatus 10 of FIG. An example of a method of processing the substrate W in the substrate processing apparatus 10 of Fig. 1 is as follows. 5, when the door assembly 140 is moved downward to open the opening 104 of the process chamber 100, the second body 540 is moved downwardly of the first body 520 at the same time. The substrate W is introduced into the discharge space 102 through the opening 104 and the plasma boundary limiting unit 500 by the carrying member 190 carrying the substrate W as shown in Fig. The substrate W is seated in the support unit 200 and the transfer member 190 is moved out of the process chamber 100 as shown in Fig. 8, the door assembly 140 is moved upwardly to close the opening 104 of the process chamber 100. At the same time, the second body 540 is coupled with the first body 520, (500) is ring-shaped as a whole. In this state, a process gas is supplied into the discharge space 102, a plasma is generated in the discharge space 102, and the substrate W is processed by the plasma.

According to the embodiment of the present invention, since the plasma boundary limiting unit 500 is separated into the first body 520 and the second body 540 and only the second body 540 moves up and down when the substrate W is taken in and out The load on the vertical movement can be reduced.

According to the embodiment of the present invention, the plasma boundary limiting unit 500 is divided into the first body 520 and the second body 540 and the second body 540 is coupled to the door assembly 140, It is not necessary to additionally provide a driver for movement of the second body 540 because it is moved up and down together with the assembly 140.

Also, according to the embodiment of the present invention, since the movement of the second body 540 is provided so as to be structurally concurrent with the movement of the door assembly 140, the control of the substrate processing apparatus 10 is simpler.

According to the embodiment of the present invention, since opening and closing of the opening 104 and movement of the second body 540 are performed at the same time, from the time when the substrate W is carried into the process chamber 100, It is possible to reduce the time or the time required until the substrate W is taken out from the substrate 100.

9 to 11 each show a modified example of the substrate processing apparatus 10 of Fig. In the substrate processing apparatuses 10a, 10b, and 10c in Figs. 9 to 11, the plasma boundary limiting units 500a, 500b, and 500c are provided in substantially the same or similar structure as the plasma boundary limiting unit 500 in Fig.

9, the plasma source 400a has an inductively coupled plasma source. The plasma source 400a has an antenna 420a disposed outside the process chamber 100a and a high frequency power source 460a can be connected to the antenna 420a. According to one example, the antenna 420a may be provided at an upper portion of the process chamber 100a.

In the substrate processing apparatus 10b of Fig. 10, the door assembly 140b has only the outer door 142b without the inner door. In this case, the second body 540b may be directly coupled to the outer door 142b by the connecting member 146b.

In the substrate processing apparatus 10c of Fig. 11, the second body 540c is provided to be separated from the door assembly 140c. The second body 540c is adjusted in height relative to the first body 520c by a body driver 590c provided independently of the door driver 140c. In this case as well, the body driver 590c only needs to drive the second body 540c, not the entire plasma boundary limiting unit 500c, so that the load is small.

12 to 22 are diagrams illustrating another example of the plasma boundary limiting units 500d to 500j, respectively. Each of the plasma boundary limiting units 500d to 500k and 500m of FIGS. 12 to 22 may be provided to the substrate processing apparatuses 500, 500a, 500b, and 500c of FIGS. 1 and 9 to 11. 12 to 22, relative heights of the second bodies 540d to 540j of the plasma boundary limiting units 500d to 500j may be adjusted with respect to the first bodies 520d to 520j.

Plate 564d in plasma boundary limiting unit 500d of Fig. 12 is provided in a downward direction longer than plate 564 in Fig. The lower end of the plate 564d may be provided higher than the upper surface of the support unit 200d. According to an example, the plate 564d of the second body 540d may be provided at a position adjacent to the exhaust hole 103 in a state in which the second body 540d is moved downward. When the plasma boundary limiting unit 500d of FIG. 12 is used, since the plate 564d is provided long in the height direction, the flow of the gas along the height direction of the plate 564d is interrupted in the space provided between the plates 564d, The plasma can more effectively prevent the plasma from escaping to the outside of the boundary limiting unit.

The first body 520e and the second body 540e in the plasma boundary limiting unit 500e of FIG. 13 have two ring bodies 562e and 566e facing each other in the vertical direction, (562e, 566e). In this case, it is possible to more effectively prevent the plasma in the discharge space 102 from escaping outside the plasma boundary limiting unit 500e along the height direction of the plate 564e.

In the plasma boundary limiting unit 500f of Fig. 14, each plate 564f has a bent shape along the height direction. In this case, it is possible to more effectively prevent the plasma in the discharge space 102f from escaping outside the plasma boundary limiting unit 500f along the height direction of the plate 564f.

In the plasma boundary limiting unit 500g of Fig. 15, each plate 564g has a bent shape along the longitudinal direction. In this case, it is possible to more effectively prevent the plasma in the discharge space 102 from escaping out of the plasma boundary limiting unit 500g along the longitudinal direction of the plate 564g.

The width of the plate 564h in the plasma boundary limiting unit 500h of Fig. 16 may be provided so as to be thicker away from the discharge space 102 along the longitudinal direction of the plate 564h. For this reason, the spacing between adjacent plates 564h is provided to be the same along the radial direction. In this case, it is possible to more effectively prevent the plasma within the discharge space 102 from escaping outside the plasma boundary limiting unit 500h along the longitudinal direction of the plate 564h, as compared with the plasma boundary limiting unit 500 of FIG. .

The width of the plate 564i in the plasma boundary limiting unit 500i of Fig. 17 can be changed according to the height of the plate 564i. As a result, the gap between the adjacent plates 564i is provided differently in the up-and-down direction. In this case, the amount of gas exhausted from the discharge space 102 through the region adjacent to the upper electrode (420 in FIG. 1) and the region adjacent to the lower electrode (440 in FIG. 1) can be controlled. According to one example, the width of the plate 564i may be gradually increased toward the bottom, thereby reducing the amount of plasma escaping from the upper region within the discharge space 102. [ Alternatively, the width of the plate 564j, such as the plasma boundary limiting unit 500j of FIG. 18, may be provided stepwise and thickly as it goes down. When the plasma boundary limiting units 500i and 500j shown in FIGS. 17 and 18 are used, the etching rate in the entire region of the substrate W can be improved.

The spacing of the plates 564k along the circumferential direction in the plasma boundary limiting unit 500k of Fig. 19 may be provided differently. In this case, the etching rate can be adjusted for each region of the substrate W. The etching rate of the substrate W in the region adjacent to the region where the distance between the plates 564k is narrow is higher than the etching rate of the substrate W in the region adjacent to the region where the distance between the plates 564k is relatively large.

The position of the ring body 520m in the plasma boundary limiting unit 500m of Figure 20 may be provided differently from Figure 1. For example, as shown in Figure 20, the ring body 520m is provided on the upper side of the outer surface of the plates 540m . Alternatively, the ring body may be provided on the inner upper side of the plates.

21 shows that the coupling member for coupling the plates in the plasma boundary limiting unit 500n may be provided in a configuration other than the ring body. For example, the coupling member may be provided with a plurality of connection rods 520n connecting the adjacent plates 540n. The connection rods 520n are provided between the plates 540n and may be coupled to the upper region of the adjacent plates 540n.

22 is a view showing another embodiment of the plasma boundary limiting unit 500p.

Referring to FIG. 22, the plasma boundary limiting unit 500p has a plurality of plasma boundary limiting rings 510p and brackets 570p. Each plasma boundary confinement ring 510p generally has the same shape as the ring body 562 in the plasma boundary confinement unit 500 of FIG. 3. That is, each plasma boundary confinement ring 510p has a first body 520p and a second body 540p, and the plate 564 of FIG. 3 is not provided to the plasma boundary confinement unit 500p of FIG. 22. .

The plurality of plasma boundary confinement rings 510p generally have the same shape. The plurality of plasma boundary confinement rings 510p are provided to be spaced apart from each other in a vertical direction. The spacing between adjacent plasma boundary confinement rings 510p is provided as a passage through which gas in the discharge space 102 escapes. In one example, three plasma boundary confinement rings 510p may be provided. However, the number of plasma boundary confinement rings 510p is not limited thereto. The second body 540p of the plasma boundary confinement rings 510p is coupled to each other by a bracket 570p. The bracket 570p may be fixedly coupled to the door assembly (140 of FIG. 1) as shown in FIG. Optionally, the bracket 570p may be coupled to the body driver 590c of FIG. 11 and moved in the vertical direction as shown in FIG. 11.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.

100 process chamber 140 door assembly
520: first body 540: second body
562: ring body 564: plate
200: support unit 300: gas supply unit
400: plasma generating unit 500: plasma boundary limiting unit

Claims (2)

A process chamber having an opening through which the substrate enters and exits and having a door assembly for opening and closing the opening;
A support unit positioned within the process chamber and supporting the substrate;
A gas supply unit for supplying a process gas into the process chamber;
A plasma generation unit for generating plasma from the process gas;
A plasma boundary limiter unit that is provided to enclose a discharge space located above the support unit in the process chamber and minimizes the escape of plasma from the discharge space,
The plasma boundary limiting unit includes:
A first body;
And a second body that is provided so as to be movable up and down with respect to the first body in the process chamber,
Wherein the first body and the second body have a ring shape in combination with each other. The method of claim 1,
Wherein the second body is coupled to the door assembly and moves up and down together with the door assembly.

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