KR20130049080A - 회전식 박막 증착 장치 및 그것을 이용한 박막 증착 방법 - Google Patents
회전식 박막 증착 장치 및 그것을 이용한 박막 증착 방법 Download PDFInfo
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- KR20130049080A KR20130049080A KR1020110114126A KR20110114126A KR20130049080A KR 20130049080 A KR20130049080 A KR 20130049080A KR 1020110114126 A KR1020110114126 A KR 1020110114126A KR 20110114126 A KR20110114126 A KR 20110114126A KR 20130049080 A KR20130049080 A KR 20130049080A
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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Abstract
Description
도 2는 도 1에 도시된 박막 증착 장치 중 지지유닛을 확대하여 도시한 사시도이다.
도 3은 도 1에 도시된 박막 증착 장치에서 증착 대상체의 이동 과정을 보인 도면이다.
도 4 및 도 5는 도 1에 도시된 박막 증착 장치에서 장치 규모를 줄일 수 있는 규격을 예시한 도면이다.
도 6은 도 1은 본 발명의 다른 실시예에 따른 박막 증착 장치의 구조를 도시한 사시도이다.
100...순환주행유닛 110...구동풀리
120...종동풀리 130...순환벨트
200...지지유닛 210...지지판
220...연결바 230...클램핑기구
231...클램퍼 232...액츄에이터
300...가이드유닛 310...가이드돌기
320...가이드레일 400...증착기
D...증착영역
Claims (16)
- 증착기와,
상기 증착기의 증착영역을 경유하는 순환궤도를 주행하는 순환주행유닛 및,
증착 대상체를 지지하여 상기 순환궤도를 따라 이동하는 지지유닛을 포함하는 박막 증착 장치.
- 제 1 항에 있어서,
상기 순환주행유닛은,
모터에 의해 회전하는 구동풀리 및 그와 대응하는 종동풀리,
상기 구동풀리와 종동풀리에 결합되어 상기 순환궤도를 형성하며 주행하는 순환벨트;를 포함하는 박막 증착 장치.
- 제 2 항에 있어서,
상기 지지유닛은,
상기 순환벨트에 결합된 연결바와,
상기 대상체가 탑재되도록 상기 연결바에 결합된 지지판과,
상기 지지판에 탑재된 상기 대상체를 고정시키는 클램핑기구를 포함하는 박막 증착 장치.
- 제 3 항에 있어서,
상기 클래핑기구는
상기 지지판에 회전가능하게 설치된 클램퍼와,
상기 클램퍼가 상기 대상체를 상기 지지판 측으로 눌러서 고정시키도록 그 클램퍼를 회전구동시키는 액츄에이터를 포함하는 박막 증착 장치.
- 제 3 항에 있어서,
상기 지지판의 상기 주행 방향으로의 길이는 상기 풀리의 원주 길이와 같은 박막 증착 장치.
- 제 3 항에 있어서,
상기 순환벨트에 상기 지지판 5개가 결합되어 주행하는 박막 증착 장치.
- 제 1 항에 있어서,
상기 지지유닛의 주행 중 유동을 억제하는 가이드유닛이 더 구비된 박막 증착 장치.
- 제 7 항에 있어서,
상기 가이드유닛은,
상기 순환궤도를 따라 마련된 가이드레일과,
상기 가이드레일에 결합되도록 상기 지지유닛에 마련된 가이드돌기를 포함하는 박막 증착 장치.
- 제 1 항에 있어서,
상기 순환궤도는 상기 대상체가 수평인 상태로 주행하도록 배치된 박막 증착 장치.
- 제 1 항에 있어서,
상기 순환궤도는 상기 대상체가 수직인 상태로 주행하도록 배치된 박막 증착 장치.
- 제 1 항에 있어서,
상기 증착기는 상기 순환주행유닛을 사이에 두고 양측에 한 쌍이 설치된 박막 증착 장치.
- 증착기의 증착영역을 경유하는 순환궤도를 마련하는 단계;
상기 순환궤도를 따라 이동하는 지지판에 대상체를 로딩하는 단계;
상기 대상체를 상기 순환궤도를 따라 순환시키며 상기 증착영역에서 증착이 진행되게 하는 단계;
증착이 완료된 상기 대상체를 상기 지지판으로부터 언로딩하는 단계;를 포함하는 박막 증착 방법.
- 제 12 항에 있어서,
상기 순환궤도는 상기 대상체가 수평인 상태로 주행하도록 배치된 박막 증착 방법.
- 제 12 항에 있어서,
상기 순환궤도는 상기 대상체가 수직인 상태로 주행하도록 배치된 박막 증착 방법.
- 제 12 항에 있어서,
상기 대상체의 로딩 및 언로딩은 상기 지지판이 상기 순환궤도를 따라 진행방향을 반대방향으로 바꾸기 시작하는 위치에서 수행되는 박막 증착 방법.
- 제 13 항에 있어서,
상기 증착기는 상기 순환궤도를 사이에 두고 양측에 한 쌍이 설치된 박막 증착 방법.
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Application Number | Priority Date | Filing Date | Title |
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KR1020110114126A KR20130049080A (ko) | 2011-11-03 | 2011-11-03 | 회전식 박막 증착 장치 및 그것을 이용한 박막 증착 방법 |
US13/443,268 US9028613B2 (en) | 2011-11-03 | 2012-04-10 | Rotating type thin film deposition apparatus and thin film deposition method used by the same |
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KR1020110114126A KR20130049080A (ko) | 2011-11-03 | 2011-11-03 | 회전식 박막 증착 장치 및 그것을 이용한 박막 증착 방법 |
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Cited By (6)
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KR20180050422A (ko) * | 2016-08-25 | 2018-05-14 | 가부시키가이샤 알박 | 성막 장치 및 성막 방법 그리고 태양 전지의 제조 방법 |
US10508332B2 (en) | 2016-08-25 | 2019-12-17 | Ulvac, Inc. | Film formation apparatus, film formation method, and manufacturing method of solar battery |
KR20180102197A (ko) * | 2016-11-02 | 2018-09-14 | 가부시키가이샤 알박 | 진공 처리 장치 |
KR20190002726A (ko) * | 2016-11-04 | 2019-01-08 | 가부시키가이샤 알박 | 성막 장치 |
KR20190087651A (ko) * | 2017-06-14 | 2019-07-24 | 가부시키가이샤 알박 | 진공 처리 장치 |
KR20180137835A (ko) * | 2017-06-19 | 2018-12-28 | 주식회사 유니코어 | 대상물 이송용 가변식 컨베이어 장치 |
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US20130115373A1 (en) | 2013-05-09 |
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