KR20120084553A - Package of light emitting device and method of manufacturing the same and lead frame - Google Patents

Abstract

A light emitting device package, a method of manufacturing the same, and a lead frame are disclosed. The disclosed light emitting device package includes a chip including a light emitting device, a lead frame on which the chip is mounted, a mold covering a side of the chip, a fluorescent layer covering a light emitting surface of the chip, and a transparent encapsulant covering the fluorescent layer. The electrode of the chip faces the lead frame. The chip and the lead frame may be flip chip bonded or contacted through an adhesion layer. The lead frame may have holes or grooves in areas where the chip is mounted, and the holes and grooves may be filled with a material having conductivity and adhesion.

Description

Package of light emitting device and method for manufacturing same and lead frame

One embodiment of the present invention relates to a light emitting device, and more particularly, to a package of a light emitting device, a method of manufacturing the same, and a lead frame.

Light emitting devices, such as light emitting diodes (LEDs) and laser diodes, are mounted on a lead frame and packaged in a production stage. In this case, wire bonding is performed between the light emitting element and the lead frame.

1 shows a package of a light emitting device according to the prior art.

Referring to FIG. 1, first and second bonding pads 12 and 14 spaced apart from each other on an upper surface of a submount 10 are formed. The submount 10 is a silicon submount having a low coefficient of thermal expansion for reliability and heat dissipation of the bonding using the solder bumps 22. A light emitting diode (LED) chip 16 is positioned on the submount 10. The first and second electrode pads 18 and 20 spaced apart from the bottom surface of the LED chip 16 are provided. The first and second electrode pads 18 and 20 are formed at positions corresponding to the first and second bonding pads 12 and 14. The submount 10 and the LED chip 16 are flipchip bonded using solder bumps 22. The solder bumps 22 are provided between the first electrode pad 18 and the first bonding pad 12 and between the second electrode pad 20 and the second bonding pad 14, respectively. Below the submount 10 is a heat sink 24 for dissipating heat generated by the LED chip 16. An attachment layer 26 is provided between the heat sink 24 and the submount 10 for attachment of both sides. The first and second electrode layers 28 and 30 are provided at positions spaced apart from the sub mount 10. The first and second electrode layers 28, 30 are provided at positions facing the submount 10. Third and fourth electrode pads 28a and 30a are formed on the first and second electrode layers 28 and 30, respectively. The first electrode pad 18 and the third electrode pad 28a are bonded with the first wire 32. The second electrode pad 20 and the fourth electrode pad 30a are bonded with the second wire 34.

In the light emitting device package according to the related art shown in FIG. 1, the sub-mount 10 in which the LED chip 16 is mounted is attached to the heat sink 24 for heat dissipation. Therefore, the manufacturing process is complicated, and the manufacturing cost may also be high.

SUMMARY OF THE INVENTION The present invention has been made in an effort to improve the above-described problems, and provides a light emitting device package which is simple in a manufacturing process and may improve light extraction efficiency and mechanical reliability of a product.

Another technical problem of the present invention is to provide a method of manufacturing such a light emitting device package.

Another technical problem of the present invention is to provide a lead frame used in such a light emitting device package.

An embodiment of the present invention provides a chip including a light emitting device, a lead frame on which the chip is mounted, a mold covering a side of the chip, a fluorescent layer covering a light emitting surface of the chip, and a transparent encapsulant covering the fluorescent layer. The electrode of the chip provides a light emitting device package facing the lead frame.

In the light emitting device package, the chip and the lead frame are flip chip bonded. In addition, the chip and the lead frame may be contacted via an adhesion layer.

The mold may fill between the chip and the lead frame.

The mold may cover the side of the lead frame.

The upper surface of the mold is located higher than the fluorescent layer.

The lead frame may include a through hole, the through hole may be filled with a conductive material, and the flip chip bonding may be formed between the conductive material and the chip.

A gold stud bump is present on a surface of the chip facing the lead frame, and the lead frame includes a through hole filled with a conductive material, and the gold stud bump is in contact with the conductive material to be mounted. Can be.

The lead frame may include spaced apart first and second lead frames, one of the first and second lead frames may contact the P electrode of the chip, and the other may contact the N electrode of the chip, respectively.

A plurality of light emitting device chips are mounted on the lead frame, and the lead frame may include a first, second and third lead frame spaced apart to form a single package.

The planar shape of the through hole may be circular, non-circular or polygonal.

The lead frame includes a plurality of grooves, wherein the grooves are filled with a conductive material, and the chip and the conductive material may be flip chip bonded or bonded with gold stud bumps.

According to an embodiment of the present invention, preparing a lead frame on which a chip including a light emitting device is mounted, mounting the chip on the lead frame, and mounting the chip, form a mold covering a side surface of the chip. And forming a fluorescent layer covering the light emitting surface of the chip, and forming a transparent encapsulant covering the fluorescent layer, wherein the electrode of the chip has a light emitting device package facing the lead frame. Provide a method.

In this manufacturing method, preparing the lead frame may further include removing at least a portion of the lead frame at various places of the lead frame and filling a conductive material where at least a portion of the lead frame is removed. Can be. In this case, removing at least a part of the lead frame may include forming a plurality of through holes in the lead frame. In addition, removing a part of the lead frame may include forming a plurality of grooves in the lead frame.

In the mounting of the chip, the chip and the lead frame may be flip chip bonded. The flip chip bonding may be performed using gold stud bumps.

The mounting of the chip may further include forming an adhesion layer on an area in which the chip of the lead frame is to be mounted, and mounting the chip on the adhesion layer.

The forming of the mold may include forming the mold between the chip and the lead frame.

In the forming of the mold, the mold may be formed to cover side surfaces of the lead frame.

A plurality of chips may be mounted on the lead frame, and the lead frame may include first to third lead frames to form a unit package.

An upper surface of the mold may be formed higher than the fluorescent layer to form a concave region in the mold. In this case, the concave region may be formed in a circular shape or the same shape as the chip.

An embodiment of the present invention provides a lead frame in which a chip including a light emitting device is mounted, the lead frame including a hole or groove formed in an area where the chip is mounted, and a conductive material filling the hole and the groove.

The light emitting device according to the embodiment of the present invention does not need a separate member such as a sub-mount or a heat sink, so that the manufacturing process can be simplified.

The light emitting device according to the embodiment of the present invention also has a mechanical bonding structure in which the lead frame and the light emitting device chip are not only directly flip chip bonded, but also at least a part of the flip chip bonding is embedded in the lead frame to a predetermined depth. Accordingly, the mechanical reliability of the light emitting device package can be improved.

The light emitting device according to an embodiment of the present invention is also molded in a post mold (post mold) method. In other words, molding is performed after bonding is made between the LED chip and the lead frame. Accordingly, the light emitting device chip may be molded to cover the side surface of the light emitting device chip, and the light emitted from the side surface of the light emitting device chip may be reflected toward the main light emitting direction of the light emitting device chip, for example, the top of the light emitting device chip. Accordingly, the light extraction efficiency or the light emission efficiency can be increased.

In addition, in the package of the light emitting device according to an embodiment of the present invention, the light emitting device is covered with a mold except for the light emitting surface of the upper portion. Therefore, the fluorescent layer is applied only to the light emitting surface of the light emitting element. Therefore, the fluorescent layer coating process is simple, and the fluorescent layer can be coated with a uniform thickness, thereby preventing the phenomenon of deteriorating color quality such as a yellow ring.

In addition, in the case of the package of the light emitting device according to an embodiment of the present invention, a post-mold technique is applied. Immediately after the light emitting device chip is mounted on the lead frame, the mold process proceeds. This process can be applied to not only a single chip but also multiple chips, and thus, various package structures can be implemented.

1 is a cross-sectional view showing a light emitting device package according to the prior art.
2 to 6 are cross-sectional views showing light emitting device packages and modified examples thereof according to an embodiment of the present invention.
7 is a cross-sectional view (left side) and a plan view (right side) illustrating a case in which a multi-chip is mounted on one package in a light emitting device package according to an exemplary embodiment of the present invention.
8 to 13 are cross-sectional views illustrating a method of manufacturing a light emitting device package according to an embodiment of the present invention.
14 is a cross-sectional view illustrating a cross-sectional shape of a through hole formed in a light emitting device chip mounting region of a lead frame of a light emitting device package according to embodiments of the present disclosure.
FIG. 15 is a cross-sectional view illustrating a groove formed in a light emitting device chip mounting region of a lead frame of a light emitting device package according to embodiments of the present disclosure.
16 and 17 are plan views illustrating a lead frame used in a light emitting device package according to embodiments of the present invention.
18 is a cross-sectional view (top) and a plan view (bottom) showing an upper design of a mold of a light emitting device package according to an embodiment of the present invention. In FIG. 18, the upper left side is a cross-sectional view of the lower end cut in the 18A-18A 'direction, and the upper right side is a cross-sectional view of the lower end cut in the 18B-18B' direction.

Hereinafter, a package of a light emitting device according to an embodiment of the present invention, a method of manufacturing the same, and a lead frame used in the light emitting device package will be described in detail with reference to the accompanying drawings. In this process, the thicknesses of layers or regions illustrated in the drawings are exaggerated for clarity.

First, a light emitting device package (hereinafter, referred to as a first package) according to an embodiment of the present invention will be described with reference to FIG. 2.

2 is a cross-sectional view showing a first package 40 according to an embodiment of the present invention.

2, the first package 40 includes first and second lead frames 42 and 44 spaced apart from each other, a light emitting device chip 46, a fluorescent layer 52, and a lens-shaped encapsulant. 54, a mold 50, and a solder 48 for flip chip bonding. One of the first and second lead frames 42 and 44 may be a P electrode, and the other may be an N electrode. The light emitting device chip 46 may be, for example, a chip including an LED or a laser diode (LD). The light emitting device chip 46 includes a P-type electrode and an N-type electrode. The P-type electrode corresponds to a lead frame used as a P electrode among the first and second lead frames 42 and 44. The N-type electrode corresponds to a lead frame used as the N electrode of the first and second lead frames 42 and 44. The first and second lead frames 42 and 44 and the light emitting device chip 46 are flip chip bonded using the solder 48. The mold 50 is in contact with the side surface of the light emitting device chip 46. The mold 50 covers the side surface of the light emitting device chip 46, fills the spaced space between the light emitting device chip 46 and the first and second lead frames 42 and 44, and the first and second lead frames. Also fill between (42, 44). The mold 50 is a material having high light reflectivity, and may be a white or colored material. In the case of a white material, for example, it may be TiO2. In addition, the mold 50 complements the mechanical properties between the light emitting device chip 46 and the first and second lead frames 42 and 44, and may be a material having high thermal conductivity. Since the side surface of the light emitting device chip 46 is covered with the mold 50, light emitted to the side surface of the light emitting device chip 46 may be reflected to the upper portion of the light emitting device chip 46, and the light emitting device chip 46 may be formed. It may be emitted in the same direction as the light emitted through the light emitting surface of the upper surface of the). Accordingly, since the amount of light emitted from the light emitting device chip 46 can be increased, the brightness can be increased. The upper surface of the mold 50 is higher than the upper surface of the light emitting device chip 46. The mold 50 has a downwardly inclined surface 50S1 starting at the inner edge of the upper surface. The inclined surface 50S1 may contact the edge of the upper surface of the light emitting device chip 46. Since the upper surface of the mold 50 is higher than the upper surface of the light emitting device chip 46, the inside of the upper surface of the mold 50 becomes a concave region. The bottom of the concave region may be the top surface of the light emitting device chip 46. The upper surface of the light emitting element chip 46 is covered with a fluorescent layer 52 of uniform thickness. The upper surface of the fluorescent layer 52 is lower than the upper surface of the mold 50. The fluorescent layer 52 may be a resin layer including a phosphor. The phosphor may include a plurality of kinds of phosphors in one kind. The resin layer may be silicon, for example. The convex lens-shaped transparent encapsulant 54 covers the fluorescent layer 52 and the inclined surface 50S1 of the mold 50 and also covers a part of the upper surface of the mold 50. The encapsulant 54 may be, for example, heat resistant epoxy or silicone.

3 shows a light emitting device package (hereinafter referred to as a second package) according to another embodiment of the present invention.

Referring to FIG. 3, in the case of the second package, a plurality of through holes 56 are formed in the first and second lead frames 42 and 44, respectively. The through hole 56 is filled with the filler 58. The planar shape of the through hole 56 may be circular, elliptical or polygonal, for example rectangular. The cross-sectional shape of the through hole 56 may be trapezoidal or rectangular, as shown in FIG. 14. The inner surface of the through hole 56 may be a curved surface rather than a plane. In addition, grooves may be formed in the first and second lead frames 42 and 44 as shown in FIG. 9C instead of the through holes 56. The solder 48 is present between the light emitting element chip 46 and the filler 58 and is in contact with both sides. Filler 58 may be a conductive and adhesive material. The filler 58 may be, for example, a solder paste, or may be a polymer including a nano-sized metal, for example, an epoxy including silver (Ag). In the case of epoxy containing silver, the content of silver may be greater than zero and up to 90 wt%. The remaining configuration of the second package may be the same as the first package 40. In the second package, the first and second lead frames 42 and 44 and the solder 48 are not simply interfacially bonded as in the case of the first package 40, but the filler 58 is formed in the first and second leads. It is a structure embedded in the frames 42 and 44. Therefore, the coupling force between the first and second lead frames 42 and 44 and the light emitting device chip 46 may be increased.

Meanwhile, the solder 48 in the second package may be a gold stud bump 60 as shown in FIG. 4. As such, when the solder 48 is the gold stud bump 60, the protrusion of the upper surface of the gold stud bump 60 is embedded in the upper end of the through hole 56 formed in the first and second lead frames 42 and 44. Bonding is formed. Accordingly, the coupling force between the light emitting device chip 46 and the first and second lead frames 42 and 44 may be increased.

5 illustrates a light emitting device package (hereinafter, referred to as a third package) according to another embodiment of the present invention.

Referring to FIG. 5, first and second metal bonding layers 66 and 68 are present between the first and second lead frames 42 and 44 and the light emitting device chip 46 instead of solder. The first and second metal bonding layers 66 and 68 may be adhesion layers having electrical conductivity. The first and second lead frames 42 and 44 are in contact with the light emitting device chip 46 in a large area through the first and second metal bonding layers 66 and 68, respectively. The contact area between the first and second lead frames 42 and 44 and the light emitting device chip 46 may be wider than that of the first and second packages. In the case of the third package, since the bonding area between the light emitting device chip 46 and the first and second lead frames 42 and 44 is large, the bonding force between both sides can be increased and heat dissipation can be effective. .

Meanwhile, in the third package of FIG. 5, there may be flip chip bonding using solder instead of the first and second metal bonding layers 66 and 68.

6 shows another modification of FIG. 3.

Referring to FIG. 6, first and second lead frames 42 and 44 are present in mold 50. In other words, similarly to the light emitting device chip 46, the side surfaces of the first and second lead frames 42 and 44 are also covered with the mold 50. As a result, the first and second lead frames 42 and 44 are covered with the mold 50 except for the bottom surface. Accordingly, since the contact area between the first and second lead frames 42 and 44 and the mold 50 is increased, mechanical reliability may be increased. In FIG. 6, bottom surfaces of the first and second lead frames 42 and 44 are connected to a power source.

FIG. 7 illustrates a case in which the light emitting device package according to the embodiment of the present invention is applied, and a plurality of light emitting device chips, that is, multi-chips are mounted in one package. In FIG. 7, the right side view is a plan view, and the left side view is a cross-sectional view of the right side view cut in the 7-7 'direction.

Referring to FIG. 7, first to fourth light emitting device chips 80, 82, 84, and 86 are mounted on the first to third lead frames 72, 74, and 78. Bonding methods of the first to third lead frames 72, 74, and 78 and the first to fourth light emitting device chips 80, 82, 84, and 86 may be the same as those described with reference to FIGS. 3 and 4. Therefore, the first to fourth light emitting device chips 80, 82, 84, and 86 may be firmly mounted on the first to third lead frames 72, 74, and 76. Although four light emitting device chips 80, 82, 84, and 86 are mounted in one package, the number of light emitting device chips to be mounted may be four or more or four or less. The first and second lead frames 72 and 74 may be the same electrode, for example, a P electrode. The third lead frame 76 may be, for example, an N electrode. The recessed area 50A1 of the mold 50 is rectangular. The concave region 50A1 may be a circular shape in which the fluorescent layer 52 covering the first to fourth light emitting device chips 80, 82, 84, and 86 is circumscribed, or may be in another form. The first to fourth light emitting device chips 80, 82, 84, and 86 are mounted in the concave region 50A1 of the mold 50. The first to fourth light emitting device chips 80, 82, 84, and 86 are mounted in a lattice alignment manner. The relationship between the first to fourth LED chips 80, 82, 84, and 86 and the mold 50 may be the same as those of FIGS. 2 to 6. The bonding method of the first to fourth light emitting device chips 80, 82, 84, and 86 and the first to third lead frames 72, 74, and 76 may be as described with reference to FIG. 5. In FIG. 7, the first to third lead frames 72, 74, and 76 are covered by the mold 50 except for the bottom surface. However, side surfaces of the first and second lead frames 72 and 74 may be exposed out of the mold 50. It is not difficult to form packages of various structures by combining the light emitting device packages according to the embodiments of the present invention illustrated in FIGS. 2 to 7. Therefore, examples other than the above-described package is omitted.

Next, a method of manufacturing a light emitting device package according to an embodiment of the present invention will be described with reference to FIG. 8.

Referring to FIG. 8, first and second lead frames 42 and 44 are prepared. A plurality of holes 42h are formed in the first and second lead frames 42 and 44. The planar shape of the hole 42h may be circular, non-circular or square. When the planar shape of the hole 42h is circular, the diameter of the hole 42h may be, for example, larger than zero and 150 μm or less. When the planar shape of the hole 42h is a quadrangle, the horizontal length and the length of the hole 42h may be, for example, greater than 0 and less than or equal to 170 μm and less than or equal to 100 μm. The cross-sectional shape of the hole 42h may be different from that shown in FIG. 8, for example, may be trapezoidal as shown in FIG. 14. In addition, grooves 90 having a predetermined depth, not holes, may be formed at positions of the holes 42h of the first and second lead frames 42 and 44.

Next, as shown in FIG. 9, the hole 42h is filled with the conductive material 58. Conductive material 58 may be a solder paste or a polymer comprising nano size metal.

Next, for flip chip bonding, as shown in FIG. 10, the light emitting device chip 46 having the solder 48 is aligned on the first and second lead frames 42 and 44. The solder 48 is in contact with the P electrode and the N electrode (not shown) of the light emitting device chip 46. The solder 48 of the light emitting device chip 46 and the holes 58h of the first and second lead frames 42 and 44 correspond one-to-one. As such, the light emitting device chip 46 is lowered while the light emitting device chip 46 and the first and second lead frames 42 and 44 are aligned, and the holes 58h of the first and second lead frames 42 and 44 are lowered. ) And the solder 48 of the light emitting device chip 46 and the conductive material 58 filled with ().

Next, as shown in FIG. 11, the mold 50 covering the side surface of the light emitting device chip 46 is formed on the first and second lead frames 42 and 44. The mold 50 is formed between the first and second lead frames 42 and 44 as well as between the bottom surface of the light emitting device chip 46 and the first and second lead frames 42 and 44. Accordingly, the space between the solder 48 and the solder 48 is filled with the mold 50. When the mold 50 is formed, the upper surface 50S2 of the mold 50 is formed higher than the upper surface 48S2 of the light emitting device chip 46. Accordingly, the portion where the light emitting device chip 46 is formed becomes a concave region of the mold 50. In addition, the mold 50 is formed to have an inclined surface 50S1 between the upper surface 50S2 and the edge of the upper surface 46S2 of the light emitting device chip 46. The inclined surface 50S2 may be a downwardly inclined surface that starts at the inner end of the upper surface 50S2 of the mold 50 and contacts the edge of the upper surface of the light emitting device chip 46. Since the inclined surface 50S2 is formed in the mold 50, the emission angle of the light emitted from the light emitting device chip 46 may be wider. In other words, the viewing angle of the light emitting device chip 46 may be increased.

Next, as shown in FIG. 12, the fluorescent layer 52 covering the upper surface 46S2 of the light emitting device chip 46 is formed in the recessed portion inside the upper surface 50S2 of the mold 50. The fluorescent layer 52 is formed only on the upper surface 48S2 of the light emitting device chip 46, and the upper surface 46S2 of the light emitting device chip 46 has a flat surface, and thus may be formed to have a uniform thickness. The fluorescent layer 52 may be a resin layer including one or more kinds of phosphors, for example, a silicone resin layer. The fluorescent layer 52 may be formed before the mold 50 is formed. For example, the fluorescent layer 52 may emit light before flip chip bonding of the light emitting device chip 46 and the first and second lead frames 42 and 44. It may be formed on the upper surface of the element chip 46.

Next, as shown in FIG. 13, an encapsulant 54 in the form of a lens covering the fluorescent layer 52 may be formed. The encapsulant 54 may be in the form of a flat plate having a uniform thickness rather than a lens shape. The encapsulant 54 may be formed to cover the inclined surface 50S1 of the mold 50 and to cover a part of the upper surface 50S2 of the mold 50. The material of the sealing material 54 may be silicone or heat resistant epoxy, for example.

On the other hand, as shown in Figure 7, when a plurality of light emitting device chips (80, 82, 84, 86) is provided in one package it is recommended to use three lead frames (72, 74, 76) spaced apart Except, it can be formed according to the manufacturing method of FIGS.

16 and 17 illustrate a lead frame used in a method of manufacturing a light emitting device package according to an embodiment of the present invention.

16 and 17 illustrate that the lead frame 100 includes only six unit lead frames 95 in two rows and three columns for convenience, but the actual lead frame 100 includes dozens or more of unit lead frames 95. Or hundreds. A bump contact area 106 exists in the center of each unit lead frame 95. The bump connection area 106 includes a plurality of holes 108 aligned. The plurality of holes 108 are filled with the above-described conductive material and correspond to the solder of the light emitting device chip.

The molding of the lead frame 100 of FIG. 16 simultaneously molds the unit lead frames existing vertically among the unit lead frames 95. In other words, two unit lead frames 95 present in each longitudinal direction are molded at a time. In FIG. 16, the horizontal and vertical lines 93 and 97 are a cutting line for separating the lead frame 100 into the unit lead frames 95, and the dotted lines 99 inside the cutting lines 93 and 97 are illustrated in FIG. 16. ) Is a molding region in which a mold is formed inside the dotted line 99. Accordingly, in the case of FIG. 16, as shown in FIGS. 2, 3, and 4, the cut edges of the lead frame are partially exposed from the mold 50. In FIG. 16 and FIG. 17, reference numeral 102 denotes a slot formed at the boundary of each unit lead frame 95, and 104 denotes a tie bar. The presence of the slot 102 can facilitate cutting. The tie bar 104 serves to fix each unit lead frame 95 to the lead frame 100 during molding.

In the case of the lead frame 200 shown in FIG. 17, the edge of each unit lead frame 95 is to implement a package located inside the mold 50 as shown in FIG. 6. In the lead frame 200 of FIG. 17, in the molding process, the entire lead frame 200 on which the light emitting device chip (not shown) is mounted is molded and cut along the cutting lines 93 and 97. The unit lead frame 95 may be separated. In this way, a unit light emitting device package is formed.

Meanwhile, as shown in FIG. 7, the lead frame used when a plurality of light emitting device chips are provided in one package has three partial lead frames in the unit lead frame 95 of FIG. 16 or 17. It may be the same as FIG. 16 or 17 except for being configured. In FIG. 16 or FIG. 17, the unit lead frame 95 is composed of two partial lead frames.

18 shows a top design embodiment of a mold 50 of a light emitting device package according to an embodiment of the present invention. In FIG. 18, the upper left side is a cross section of the lower end cut in the 18A-18A 'direction, and the upper right side is a cross section of the lower end cut in the 18B-18B' direction.

FIG. 18 shows a case where the planar shape of the concave region 50A2 of the mold 50 is a circle circumscribed with the edge of the light emitting device chip 46. At this time, the surface of the concave region 50A2 of the mold 50 around the light emitting device chip 46 and the surface of the fluorescent layer 52 have the same height. FIG. 18 shows a case where the planar shape of the concave region of the mold 50 is a quadrangle shaped like the light emitting device chip 40. 18, the area of the concave region of the mold 50 may be the same as the light emitting device chip 46.

While many details are set forth in the foregoing description, they should be construed as illustrative of preferred embodiments, rather than to limit the scope of the invention. Therefore, the scope of the present invention should not be defined by the described embodiments, but should be determined by the technical spirit described in the claims.

42, 44: first and second lead frames 42h, 56, 108: holes
46: light emitting device chip 48: solder
48S2: Top surface of light emitting device chip 50: Mold
50A1, 50S2: Concave area of mold 50 50S1: Inclined surface of mold 50
50S2: upper surface 52 of mold 50: fluorescent layer
54: Lenticular Encapsulant 58: Conductive Material
60: gold stud bump 66, 68: first and second metal bonding layer
72, 74, and 76: first to third lead frames
80, 82, 84, 86: first to fourth light emitting device chips
90: groove 93, 97: cutting line
95: unit lead frame 99: mold boundary
100, 200: Lead frame 102: Slot
104: tie bar
106: bump contact area

Claims (25)

A chip comprising a light emitting element;
A lead frame on which the chip is mounted;
A mold covering the side of the chip;
A fluorescent layer covering the light emitting surface of the chip; And
It includes; transparent encapsulation material covering the fluorescent layer;
The electrode of the chip is a light emitting device package facing the lead frame. The method of claim 1,
The chip and the lead frame is a flip chip bonded light emitting device package. The method of claim 1,
The chip and the lead frame is in contact with the light emitting device package via an adhesion layer. The method of claim 2,
The mold is a light emitting device package to fill between the chip and the lead frame. The method of claim 1,
The mold is a light emitting device package covering a side of the lead frame. The method of claim 1,
The upper surface of the mold is a light emitting device package located higher than the fluorescent layer. The method of claim 2,
The lead frame includes a through hole, wherein the through hole is filled with a conductive material, the flip chip bonding is formed between the conductive material and the chip. The method of claim 1,
A gold stud bump is present on a surface of the chip facing the lead frame, and the lead frame includes a through hole filled with a conductive material, and the gold stud bump is in contact with the conductive material. Light emitting device package. The method of claim 1,
The lead frame includes spaced apart first and second lead frames, wherein one of the first and second lead frames is in contact with the P electrode of the chip and the other is connected to the N electrode of the chip. package. The method according to any one of claims 1, 7, and 8,
A light emitting device package comprising a plurality of light emitting device chips mounted on the lead frame, wherein the lead frame comprises spaced apart first, second and third lead frames. 9. The method according to claim 7 or 8,
The planar shape of the through hole is a light emitting device package of circular, non-circular or polygonal. The method of claim 1,
The lead frame includes a plurality of grooves, wherein the grooves are filled with a conductive material, and the chip and the conductive material are flip chip bonded or bonded with gold stud bumps. Preparing a lead frame on which a chip including a light emitting device is mounted;
Mounting the chip on the lead frame;
After mounting the chip, forming a mold covering the side of the chip;
Forming a fluorescent layer covering a light emitting surface of the chip; And
Forming a transparent encapsulant covering the fluorescent layer;
The electrode of the chip manufacturing method of the light emitting device package facing the lead frame. The method of claim 13,
Preparing the lead frame,
Removing at least a portion of the lead frame at various places in the lead frame; And
Filling a conductive material where at least a portion of the lead frame is removed; Method of manufacturing a light emitting device package further comprising. 15. The method of claim 14,
Removing at least a portion of the lead frame,
A method of manufacturing a light emitting device package comprising forming a plurality of through holes in the lead frame. 15. The method of claim 14,
Removing a part of the lead frame,
Forming a plurality of grooves in the lead frame manufacturing method of a light emitting device package. The method of claim 13,
In the step of mounting the chip,
The chip and the lead frame is a flip chip bonding method of manufacturing a light emitting device package. The method of claim 17,
The flip chip bonding method of manufacturing a light emitting device package is performed using a gold stud bump. The method of claim 13,
Mounting the chip,
Forming an adhesion layer on an area of the lead frame on which the chip is to be mounted; And
And mounting the chip on the adhesion layer. The method of claim 13,
Forming the mold,
The method of manufacturing a light emitting device package comprising the step of forming the mold between the chip and the lead frame. The method of claim 13,
In the forming of the mold, the mold is formed to cover the side of the lead frame manufacturing method of the light emitting device package. The method of claim 13,
A plurality of chips are mounted on the lead frame, wherein the lead frame includes a first to third lead frame to form a unit package. The method of claim 13,
And forming a concave region in the mold by forming an upper surface of the mold higher than the fluorescent layer. 24. The method of claim 23,
The concave region is a method of manufacturing a light emitting device package to form a circular shape or the same shape as the chip circumscribed by the chip. A lead frame in which a chip including a light emitting element is mounted,
Holes or grooves formed in areas where the chips are to be mounted; And
And a conductive material filling the holes and grooves.

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