KR20120048418A - 플라즈마 임피던스 매칭 장치 및 그 방법 - Google Patents
플라즈마 임피던스 매칭 장치 및 그 방법 Download PDFInfo
- Publication number
- KR20120048418A KR20120048418A KR1020100110037A KR20100110037A KR20120048418A KR 20120048418 A KR20120048418 A KR 20120048418A KR 1020100110037 A KR1020100110037 A KR 1020100110037A KR 20100110037 A KR20100110037 A KR 20100110037A KR 20120048418 A KR20120048418 A KR 20120048418A
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- South Korea
- Prior art keywords
- plasma
- variable capacitor
- impedance matching
- high frequency
- impedance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
Abstract
Description
도 2는 본 발명의 다른 일실시예에 따른 플라즈마 임피던스 매칭 장치를 나타낸 구성도이다.
도 3은 본 발명의 일실시예에 따른 플라즈마 임피던스 매칭 장치가 결합된 플라즈마 기판 처리 장치를 나타낸 구성도이다.
도 4는 본 발명의 다른 일실시예에 따른 플라즈마 임피던스 매칭 장치가 결합된 플라즈마 기판 처리 장치를 나타낸 구성도이다.
도 5는 본 발명의 또다른 일실시예에 따른 플라즈마 임피던스 매칭 장치가 결합된 플라즈마 기판 처리 장치를 나타낸 구성도이다.
도 6은 본 발명의 일실시예에 따른 플라즈마 임피던스 매칭 방법을 나타낸 순서도이다.
도 7은 본 발명의 다른 일실시예에 따른 플라즈마 임피던스 매칭 방법을 나타낸 순서도이다.
도 8은 본 발명의 또다른 일실시예에 따른 플라즈마 임피던스 매칭 방법을 나타낸 순서도이다.
도 9는 펄스 모드의 고주파 전력을 공급할 때 본 발명에 따른 플라즈마 상태 변화를 나타낸 파형도이다.
2110 고주파 전원 2120 고주파 전송 라인
2140 임피던스 측정기 2150 반사 파워 측정기
2160 공정 챔버 2170 전극
2180 인덕터
2200 플라즈마 임피던스 매칭 장치
2210 임피던스 정합기
2220 제 1 가변 커패시터
2221 커패시터 2223 기계적 구동 수단
2240 제 2 가변 커패시터
2241 커패시터 2243 스위치
2250 제어기
Claims (2)
- 고주파 전력의 전송로에 연결되어 플라즈마 임피던스를 매칭시키는 임피던스 정합기; 및
상기 임피던스 정합기에 제어 신호를 송출하는 제어기를 포함하되,
상기 임피던스 정합기는,
상기 제어기의 제어신호를 받아 기계적 구동 수단에 의해 커패시턴스를 조절하는 제 1 가변 커패시터; 및
복수 개의 커패시터에 스위치를 연결하고 상기 스위치를 상기 제어부의 제어신호에 따라 온/오프하여 커패시턴스를 전기적으로 조절하는 제 2 가변 커패시터를 포함하는 것을 특징으로 하는 플라즈마 임피던스 매칭 장치. - 제 1 항에 있어서,
상기 제 2 가변 커패시터의 복수 개의 커패시터는 서로 병렬로 연결되는 것을 특징으로 하는 플라즈마 임피던스 매칭 장치.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100110037A KR20120048418A (ko) | 2010-11-05 | 2010-11-05 | 플라즈마 임피던스 매칭 장치 및 그 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100110037A KR20120048418A (ko) | 2010-11-05 | 2010-11-05 | 플라즈마 임피던스 매칭 장치 및 그 방법 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150071156A Division KR20150064722A (ko) | 2015-05-21 | 2015-05-21 | 플라즈마 임피던스 매칭 장치 및 그 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20120048418A true KR20120048418A (ko) | 2012-05-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020100110037A Ceased KR20120048418A (ko) | 2010-11-05 | 2010-11-05 | 플라즈마 임피던스 매칭 장치 및 그 방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20120048418A (ko) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170059720A (ko) * | 2015-11-23 | 2017-05-31 | 주식회사 원익아이피에스 | 반도체 소자의 제조 방법 및 장치 |
| CN109412574A (zh) * | 2018-10-25 | 2019-03-01 | 北京北方华创微电子装备有限公司 | 一种射频电源的功率传输方法 |
| KR20230018278A (ko) * | 2021-07-29 | 2023-02-07 | 주식회사 알에프피티 | 플라즈마 처리 장치 및 이에 사용되는 미세 제어 회로 |
-
2010
- 2010-11-05 KR KR1020100110037A patent/KR20120048418A/ko not_active Ceased
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170059720A (ko) * | 2015-11-23 | 2017-05-31 | 주식회사 원익아이피에스 | 반도체 소자의 제조 방법 및 장치 |
| CN109412574A (zh) * | 2018-10-25 | 2019-03-01 | 北京北方华创微电子装备有限公司 | 一种射频电源的功率传输方法 |
| KR20230018278A (ko) * | 2021-07-29 | 2023-02-07 | 주식회사 알에프피티 | 플라즈마 처리 장치 및 이에 사용되는 미세 제어 회로 |
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