KR20120040550A - Semiconductor light emitting device and manufacturing method of the same - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device and a method of manufacturing the same. According to an aspect of the present invention, a plurality of nanorods including a first conductive semiconductor material, an active layer formed to cover each of the plurality of nanorods, and the active layer are provided. A second conductive semiconductor layer formed to cover the first electrode, a first electrode electrically connected to the plurality of nanorods, an insulating portion formed on at least an upper surface of the second conductive semiconductor layer, the second conductive semiconductor layer, and A semiconductor light emitting device is formed to cover the insulating part and includes a second electrode contacting a side surface of the second conductive semiconductor layer.
According to an embodiment of the present invention, by employing a nanorod-shaped active layer, it is possible to obtain a semiconductor light emitting device capable of improving crystallinity, having a wide light emitting area, and further improving current spreading performance.

Description

Semiconductor light emitting device and method of manufacturing the same {Semiconductor light emitting device and manufacturing method of the same}

The present invention relates to a semiconductor light emitting device and a method of manufacturing the same.

A light emitting diode (LED), which is a kind of semiconductor light emitting device, is a semiconductor device capable of generating light of various colors based on recombination of electrons and holes at junctions of p and n type semiconductors when current is applied thereto. Such semiconductor light emitting devices have a number of advantages, such as long lifespan, low power supply, excellent initial driving characteristics, high vibration resistance, etc., compared to filament based light emitting devices. In particular, in recent years, group III nitride semiconductors capable of emitting light in a blue series short wavelength region have been in the spotlight.

After such a nitride light emitting device has been developed, many technical developments have been made, and the range of its use has been expanded, and thus, much research has been conducted into general lighting and electric light sources. In particular, conventionally, nitride light emitting devices have been mainly used as components applied to low current / low power mobile products, and recently, their application ranges are gradually expanded to high current / high power fields.

As LEDs are required in high current / high power fields, researches for improving light emission characteristics have been continued in the art, and these studies are mainly performed for growth conditions of quantum well structures (MQW), quantum well layers, and quantum barriers. The focus is on improving the crystallinity of the layers.

An object of the present invention is to provide a semiconductor light emitting device that can improve the crystallinity by having a nano-rod-shaped active layer, has a wide light emitting area, and further improve the current diffusion performance.

Another object of the present invention is to provide a method for efficiently manufacturing a semiconductor light emitting device having the above structure.

In order to solve the above problems, an aspect of the present invention,

A plurality of nanorods comprising a first conductive semiconductor material, an active layer formed to cover each of the plurality of nanorods, a second conductive semiconductor layer formed to cover the active layer, and electrically connected to the plurality of nanorods A first electrode connected to the second conductive semiconductor layer, an insulating portion formed on at least an upper surface of the second conductive semiconductor layer, and a second conductive semiconductor layer and the insulating portion to be in contact with a side surface of the second conductive semiconductor layer. Provided is a semiconductor light emitting device comprising two electrodes.

In an embodiment of the present invention, the thickness of the portion covering the side of the nanorod may be greater than the thickness of the portion covering the top surface of the nanorod.

In an embodiment of the present disclosure, the semiconductor device may further include a first conductivity type semiconductor layer formed under the plurality of nanorods to form an integrated structure with the plurality of nanorods.

In this case, the first conductive semiconductor layer may further include an electrically insulating dielectric layer formed in a region corresponding to the plurality of nanorods.

In addition, the dielectric layer may be made of the same material as the insulating portion.

In addition, the first electrode may be disposed on one surface of the first conductivity type semiconductor layer.

In example embodiments, the second electrode may be formed on the ohmic contact portion and the ohmic contact portion formed to cover the second conductive semiconductor layer and the insulating portion to be in contact with a side surface of the second conductive semiconductor layer. It may include a pad portion formed.

In this case, the ohmic contact part may be made of a light transmissive material. Alternatively, the ohmic contact part may be made of a light reflective material.

In one embodiment of the present invention, the second electrode may be integrally formed by connecting portions covering each of the plurality of nanorods.

In one embodiment of the present invention, the plurality of nanorods may have a side and top surface perpendicular to each other and an inclined surface connecting the side and the top surface.

In this case, an upper surface of the nanorods may be a (0001) plane, the side surface is a (1000) plane, and the inclined surface may be a (1-101) plane or (11-22) plane.

In one embodiment of the present invention, the active layer and the second conductive semiconductor layer may be formed to maintain the nano-rod shape.

On the other hand, for another aspect of the present invention,

A plurality of nanorods including a first conductive semiconductor material, an active layer formed to cover each of the plurality of nanorods, a second conductive semiconductor layer formed to cover the active layer, and having different thicknesses; And an insulating part formed to cover a first electrode electrically connected to the plurality of nanorods, an area thinner than another area of a surface of the second conductive semiconductor layer, and the second conductive semiconductor layer and the insulating part. A semiconductor light emitting device is formed so as to cover a second light emitting device including a second electrode in contact with a region not covered by the insulating portion in the second conductive semiconductor layer.

On the other hand, in the case of another aspect of the present invention,

Forming an active layer to cover each of the plurality of nanorods having a first conductivity type semiconductor material, forming a second conductivity type semiconductor layer to cover the active layer, and an upper surface of the second conductivity type semiconductor layer Forming an insulating portion in the insulating layer, forming a second electrode covering the second conductive semiconductor layer and the insulating portion to be in contact with the side surface of the second conductive semiconductor layer, and electrically connecting the plurality of nanorods. It provides a method for manufacturing a semiconductor light emitting device comprising the step of forming a first electrode.

In an embodiment, the method may further include forming the plurality of nanorods on the first conductive semiconductor layer after forming the first conductive semiconductor layer on the substrate.

In this case, the forming of the plurality of nanorods may include forming a dielectric layer having an opening exposing the first conductive semiconductor layer on the first conductive semiconductor layer and through the openings. And re-growing the first conductivity type semiconductor material.

In addition, the dielectric layer may be made of the same material as the insulating portion.

In an embodiment, the forming of the insulating part may include forming an insulating material to cover the top and side surfaces of the second conductive semiconductor layer and the insulating material covering the side surface of the second conductive semiconductor layer. And removing the exposed portions of the second conductive semiconductor layer.

In this case, in the forming of the insulating material, the insulating material may be formed thicker on the upper surface than the side surface of the second conductivity-type semiconductor layer.

In addition, in the exposing the side surface of the second conductivity type semiconductor layer, the portion formed on the side of the second conductivity type semiconductor layer and the portion formed on the upper surface may be removed to the same thickness.

In addition, the insulating material may be removed by wet etching.

In one embodiment of the present invention, the plurality of nanorods may have a side and top surface perpendicular to each other and an inclined surface connecting the side and the top surface.

According to an embodiment of the present invention, by employing a nanorod-shaped active layer, it is possible to obtain a semiconductor light emitting device capable of improving crystallinity, having a wide light emitting area, and further improving current spreading performance.

In addition, a method capable of efficiently manufacturing a semiconductor light emitting device having the above structure can be obtained.

1 is a cross-sectional view schematically showing a semiconductor light emitting device according to an embodiment of the present invention.
2 and 3 are enlarged regions of the nanorods according to the embodiment and the comparative example of the present invention, respectively.
4 is a schematic cross-sectional view of a semiconductor light emitting device according to another embodiment of the present invention.
5 to 8 are cross-sectional views of processes illustrating an example of manufacturing the semiconductor light emitting device of the present invention.
9 is a schematic cross-sectional view of a semiconductor light emitting device according to an embodiment modified from the embodiment of FIG. 4.
10 is a schematic cross-sectional view of a semiconductor light emitting device according to still another embodiment of the present invention.
11 is a configuration diagram schematically showing an example of a semiconductor light emitting device proposed in the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. In addition, the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape and size of elements in the drawings may be exaggerated for clarity, and the elements denoted by the same reference numerals in the drawings are the same elements.

1 is a cross-sectional view schematically showing a semiconductor light emitting device according to an embodiment of the present invention. 2 and 3 are enlarged regions of the nanorods according to the embodiment and the comparative example of the present invention, respectively. Referring to FIG. 1, the semiconductor light emitting device 100 according to the present embodiment may include a substrate 101 and a first conductive semiconductor layer 102 having an nanorod 102b structure, an active layer 103, and a second conductive semiconductor layer. And a semiconductor layer 104, electrically insulating dielectric layers 105 and 106, an insulating portion 107, and an ohmic contact portion 108. A first electrode 109a is formed on one surface of the first conductivity type semiconductor layer 102; The pad portion 109b is formed on the ohmic contact portion 108. In this case, the ohmic contact 108 and the pad 109b may be viewed as elements that constitute the second electrode.

The substrate 101 is provided as a substrate for semiconductor growth, and may be a substrate made of an electrically insulating and conductive material such as sapphire, SiC, MgAl ₂ O ₄ , MgO, LiAlO ₂ , LiGaO ₂ , GaN, or the like. In this case, the most preferable one can be used is sapphire having electrical insulation, and sapphire is Hexa-Rhombo R3c symmetry, and the lattice constants of c-axis and a-direction are 13.001Å and 4.758Å, respectively. And a C (0001) plane, an A (1120) plane, an R (1102) plane, and the like. In this case, the C plane is mainly used as a nitride growth substrate because the C surface is relatively easy to grow and stable at high temperatures.

The first and second conductivity-type semiconductor layers 102 and 104 may be formed of semiconductors doped with n-type and p-type impurities, respectively, but are not limited thereto, and conversely, may be p-type and n-type semiconductor layers, respectively. will be. In addition, the first and second conductivity-type semiconductor layers 102 and 104 may be formed of nitride semiconductors such as Al _x In _y Ga _(1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x +). It can be made of a material having a composition of y≤1). However, the first and second conductivity-type semiconductor layers 102 and 104 may be made of AlGaInP-based semiconductors or AlGaAs-based semiconductors instead of nitride semiconductors. The active layer 103 disposed between the first and second conductivity type semiconductor layers 102 and 104 emits light having a predetermined energy by recombination of electrons and holes, and the quantum well layer and the quantum barrier layer alternate with each other. For example, in the case of a nitride semiconductor, a GaN / InGaN structure may be used. Meanwhile, the first and second conductivity-type semiconductor layers 102 and 104 and the active layer 103 constituting the light emitting structure may be formed of metal organic chemical vapor deposition (MOCVD) and hydrogenation vapor phase epitaxy. , 'HVPE'), Molecular Beam Epitaxy (MBE) and the like can be grown using processes known in the art.

In the present embodiment, the light emitting structure has a nanorod shape. That is, the first conductivity type semiconductor layer 102 has a portion 102a corresponding to the base layer and a plurality of nanorods 102b connected thereto. The active layer 103 is formed to cover each of the plurality of nanorods 102b, and the second conductive semiconductor layer 104 is formed to cover the active layer 103 to maintain the nanorod shape as a whole of the light emitting structure. Since the light emitting structure is formed to have a nanorod shape, it is possible to block propagation of threading dislocations generated in the growth process of the semiconductor layer, thereby improving crystallinity of the semiconductor layer constituting the light emitting structure. In addition, since the total area of the light-emitting active layer 103 is increased, the effect of increasing the luminous efficiency can be expected. In this case, an electrically insulating dielectric layer 105 is formed in a region corresponding to the plurality of nanorods 102b among upper surfaces of the portion 102a corresponding to the base layer, and the dielectric layer 105 is formed of silicon oxide, silicon nitride, or the like. Could be done. In the case of the dielectric layer 105, as well as a function of electrically separating the first and second conductivity-type semiconductor layers 102 and 104, the dielectric layer 105 may also function as a mask for forming the nanorods 102b.

Meanwhile, in the case of the second conductivity type semiconductor layer 104, the thickness t1 of the portion covering the side surface of the nanorod 102b is the thickness of the portion covering the upper surface of the nanorod 102b as shown in FIG. 2. It is formed larger than (t2). The reason is related to the growth plane of the substrate. For example, in the case of the p-type nitride semiconductor layer grown on the C plane of the hexagonal system, that is, the (0001) plane, the (1000) plane is indicated by the S2 plane. This is because the growth rate is faster than the growth rate on the (0001) plane denoted by S1, which can be understood as a p-type dopant such as Mg to prevent deposition on the (0001) plane. When the overall contact with the ohmic contact portion 108 ′ is maintained, if the thickness in the (0001) plane direction of the second conductivity-type semiconductor layer 104 becomes relatively thin, as shown in FIG. 3, the current is thin. Concentrated on the (0001) plane. This is because the second conductivity-type semiconductor layer 104 has a relatively low electrical conductivity, so that current flows in the second conductive-type semiconductor layer 104 in a small thickness. As such, when the current is concentrated in a specific region of the second conductivity-type semiconductor layer 104, there is a problem that the forward leakage current increases and the light output decreases. Since the problem of current concentration may occur when regions having different thicknesses exist in the second conductivity-type semiconductor layer 104, the growth rate difference of the semiconductor layer according to the crystal plane described above will not always affect. However, thickness irregularities may occur due to other causes (eg, forced etching).

In the present embodiment, in order to reduce the thickness non-uniformity problem of the second conductivity type semiconductor layer 104, the region of the second conductivity type semiconductor layer 104 having a relatively thin thickness, that is, the example of FIGS. As a reference, an insulating portion 107 is formed on the upper surface of the second conductivity-type semiconductor layer 104 so that current can be dispersed. Accordingly, the ohmic contact portion 108 is in contact with the side of the second conductivity-type semiconductor layer 104, and since the current can be more uniformly injected into the second conductivity-type semiconductor layer 104, Reliability and light efficiency can be greatly improved. In this case, the insulating part 107 may be used as long as it has a material having electrical insulation. For example, the insulating part 107 may be made of silicon oxide or silicon nitride, and may be made of the same material as the dielectric layer 105. In addition, a dielectric layer 106 filled with an insulating material may be formed in a region between the nanorod-shaped light emitting structures, and the dielectric layer 106 may also be made of the same material as the dielectric layer 105 or the insulating portion 107.

On the other hand, the ohmic contact portion 108 may be formed integrally by connecting portions covering each of the plurality of light emitting structures of the nano-rod shape, may be made of a translucent material, for example, the light transmittance of the transparent electrode material It may be formed of a transparent conductive oxide such as ITO, CIO, ZnO and the like which have high ohmic contact performance. On the contrary, as will be described later, the ohmic contact unit 108 may be formed of a light reflective material, and in this case, the ohmic contact unit 108 may be suitable for mounting the light emitting device 100 in the form of a so-called flip chip.

4 is a schematic cross-sectional view of a semiconductor light emitting device according to another embodiment of the present invention. Referring to FIG. 4, the semiconductor light emitting device 200 according to the present embodiment may include a first conductive semiconductor layer 202, an active layer 203, and a second conductive semiconductor structure having a substrate 201 and a nanorod 202b. The semiconductor layer 204, the electrically insulating dielectric layers 205 and 206, the insulating portion 207, and the ohmic contact portion 208 are formed on one surface of the first conductive semiconductor layer 202. The pad portion 209b is formed on the ohmic contact portion 208. Referring to the difference from the above embodiment, in the present embodiment, the nanorods 202b of the first conductivity-type semiconductor layer 202 have the side surface S2 and the upper surface S1 perpendicular to each other, and the inclined surface connecting these surfaces ( S3). In this case, the upper surface S1 and the side surface S2 become the (0001) plane and the (1000) plane, respectively, as in the previous embodiment, and the inclined surface S3 is the (1-101) plane or the (11-22) plane. And so on. Also in the present embodiment, the second conductive semiconductor layer 204 has a portion covering the side of the nanorod 202b thicker than the portion covering the upper surface, so as to cover the upper surface S1 to minimize current concentration. The insulating portion 207 is disposed. In this case, the insulating portion 207 is not necessarily formed to be limited to the upper surface S1, and the forming range may be appropriately adjusted in a range capable of performing the current dispersion function. That is, as shown in FIG. 4, the insulating part 207 may be formed to cover the inclined surface S3.

5 to 8 are cross-sectional views of processes illustrating an example of manufacturing the semiconductor light emitting device of the present invention, and will be described with reference to the semiconductor light emitting device of FIG. 2. In this case, first, as shown in FIG. 5, a rod-shaped light emitting structure is formed, i.e., the process includes: i) growing a portion 202a of the first conductivity-type semiconductor layer, and ii) dielectric layer 205 having an opening. Forming, iii) regrowing the nanorod-shaped first conductive semiconductor layer 202b and iv) growing the active layer 203 and the second conductive semiconductor layer 204 to maintain the nanorod shape. Can be. Next, as shown in FIG. 6, an insulating material 210, such as silicon oxide or silicon nitride, is formed to cover the top and side surfaces of the second conductivity-type semiconductor layer 204. In this case, according to a conventional deposition process, the insulating material 210 is formed thicker than the side surface of the second conductivity-type semiconductor layer 204 except for this.

Next, as shown in FIG. 7, the side surface of the second conductivity-type semiconductor layer 204 is exposed. In this case, the second conductive semiconductor layer 204 may be performed by removing at least a portion of the insulating material 210 formed on the side surface of the second conductive semiconductor layer 204. Since the side thickness of the second conductive semiconductor layer 204 is exposed, even if the portion formed on the side of the side and the remaining portion are removed to the same thickness, the insulating portion 207 may be formed on the upper surface of the second conductive semiconductor layer 204 is exposed. have. That is, the insulating material 210 may be easily removed by applying a wet etching process, and the process convenience may be increased because the etching thickness does not need to be precisely adjusted to leave only the insulating part 207. Next, as shown in FIG. 8, an ohmic contact portion 208 having a shape in which portions covering each of the plurality of light emitting structures having a nanorod shape are connected by using a process such as deposition and sputtering is formed, and as described above. The ohmic contact portion 208 may be made of a light transmissive material or a light reflective material as necessary. Thereafter, although not separately shown, the device may be completed by forming an electrode structure.

9 is a cross-sectional view schematically illustrating a semiconductor light emitting device according to an embodiment modified from the embodiment of FIG. 4. In the case of the semiconductor light emitting device 200 ′ according to the embodiment of FIG. 9, the rest of the structure except for the ohmic contact portion 208 ′ is the same as that of FIG. 4, and the ohmic contact portion 208 ′ is formed of a light reflecting material. The light may be reflected toward the active layer 203. Accordingly, the device 200 ′ may be mounted and used in a flip chip structure. In the case of the ohmic contact portion 208` having a light reflection function, a metal having high reflectance such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, etc. is deposited, sputtered, plated, or the like. It can be formed by a process.

Meanwhile, in the above embodiment, the first conductive semiconductor layer is exposed by partially removing the light emitting structure to form the first electrode, and thus, the first and second electrodes are arranged to face the same direction. However, the first and second electrodes may be disposed to face each other with the light emitting structure therebetween. 10 is a schematic cross-sectional view of a semiconductor light emitting device according to still another embodiment of the present invention. The semiconductor light emitting device 300 according to the present embodiment includes a first conductive semiconductor layer 302 having an nanorod 302b structure, an active layer 303, and a second conductive semiconductor layer 304. The insulating portion 307 is formed so as to cover a region having a thin thickness among the two conductive semiconductor layers 304. In addition, the second electrode connected to the second conductivity-type semiconductor layer 304 includes a reflective metal layer 308 and a conductive substrate 309b. In the case of the first electrode 309a, the semiconductor growth substrate (in FIG. 201 is removed to form the exposed first conductive semiconductor layer 302. Also in this embodiment, since the region having a relatively thin thickness in the second conductivity type semiconductor layer 304 can be electrically separated from the reflective metal layer 308 by the insulating portion 307, the current spreading performance is improved. .

The reflective metal layer 308 is in contact with the side surface of the second conductivity type semiconductor layer 304, and the light emitted from the active layer 303 is directed toward the top of the device 300, that is, toward the first conductivity type semiconductor layer 302. It can perform the function of reflecting. In addition, it is preferable to make an ohmic contact with the second conductivity type semiconductor layer 304 from an electrical point of view. In consideration of this function, the reflective metal layer 308 includes a material such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and the like, and may be formed by an appropriate deposition process. In this case, although not shown in detail, the reflective metal layer 308 may be adopted in two or more layers to improve reflection efficiency. As a specific example, Ni / Ag, Zn / Ag, Ni / Al, Zn / Al, Pd / Ag, Pd / Al, Ir / Ag. Ir / Au, Pt / Ag, Pt / Al, Ni / Ag / Pt, etc. are mentioned. However, the reflective metal layer 308 is not necessarily required in this embodiment, and may not be used in some cases.

The conductive substrate 309a serves as a support for supporting the light emitting structure in a process such as laser lift-off for removing the semiconductor growth substrate (201 in FIG. 4), and a second conductive semiconductor layer 304. It can also carry out the function of delivering an electrical signal to it. To this end, the conductive substrate 309b may be formed of a material including any one of Au, Ni, Al, Cu, W, Si, Se, and GaAs, for example, a material doped with Al on a Si substrate. In the case of the present embodiment, the conductive substrate 309b may be formed by bonding to the light emitting structure through a conductive adhesive layer (not shown) or by plating.

On the other hand, the semiconductor light emitting device having the above structure can be applied in various fields. 11 is a configuration diagram schematically showing an example of a semiconductor light emitting device proposed in the present invention. Referring to FIG. 11, the dimming device 400 includes a light emitting module 401, a structure 404 on which the light emitting module 401 is disposed, and a power supply unit 403, and the light emitting module 401 includes the present invention. One or more semiconductor light emitting devices 402 obtained in the manner proposed by the present invention may be disposed. In this case, the semiconductor light emitting device 402 may be mounted on the module 401 or may be provided in a package form. The power supply unit 403 may include an interface 405 for receiving power and a power control unit 406 for controlling the power supplied to the light emitting module 401. In this case, the interface 405 may include a fuse that blocks overcurrent and an electromagnetic shielding filter that shields an electromagnetic interference signal.

When the AC power is input to the power source, the power control unit 406 may include a rectifying unit for converting AC into DC and a constant voltage control unit for converting into a voltage suitable for the light emitting module 401. If the power source itself is a direct current source (for example, a battery) having a voltage suitable for the light emitting module 401, the rectifying unit or the constant voltage control unit may be omitted. In addition, when the light emitting module 401 itself employs an element such as an AC-LED, AC power may be directly supplied to the light emitting module 401, and in this case, the rectifier or the constant voltage controller may be omitted. In addition, the power control unit may control the color temperature and the like to enable the illumination of the human emotion. In addition, the power supply unit 403 may include a feedback circuit device for performing a comparison between the light emission amount of the light emitting element 402 and a predetermined light amount, and a memory device in which information such as desired luminance and color rendering properties are stored.

The dimming device 400 may be used as a backlight unit used in a display device such as a liquid crystal display device having an image panel, an indoor lighting device such as a lamp, a flat panel light, or an outdoor lighting device such as a street lamp, a signboard, a sign, and the like. It can be used in various transportation lighting devices, such as automobiles, ships, aircrafts, and the like. Furthermore, it may be widely used in home appliances such as TVs and refrigerators, and medical devices.

The present invention is not limited by the above-described embodiments and the accompanying drawings, but is intended to be limited only by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

101: substrate 102: first conductive semiconductor layer
103: active layer 104: second conductive semiconductor layer
105, 106: dielectric layer 107: insulation
108: ohmic contact portions 109a and 109b: first and second electrodes
210: insulating material 308: reflective metal layer
309b: conductive substrate

Claims (23)

A plurality of nanorods having a first conductivity type semiconductor material;
An active layer formed to cover each of the plurality of nanorods;
A second conductivity type semiconductor layer formed to cover the active layer;
A first electrode electrically connected to the plurality of nanorods;
An insulation portion formed on at least an upper surface of the second conductivity type semiconductor layer; And
A second electrode formed to cover the second conductive semiconductor layer and the insulating part and contacting side surfaces of the second conductive semiconductor layer;
Semiconductor light emitting device comprising a.
The method of claim 1,
The second conductive semiconductor layer is a semiconductor light emitting device, characterized in that the thickness of the portion covering the side of the nanorod is greater than the thickness of the portion covering the upper surface of the nanorod.
The method of claim 1,
And a first conductive semiconductor layer formed under the plurality of nanorods to form an integrated structure with the plurality of nanorods.
The method of claim 3,
And an electrically insulating dielectric layer formed on a region of the upper surface of the first conductive semiconductor layer between the plurality of nanorods.
The method of claim 4, wherein
The dielectric layer is a semiconductor light emitting device, characterized in that made of the same material as the insulating portion.
The method of claim 3,
The first electrode is a semiconductor light emitting device, characterized in that disposed on one surface of the first conductive semiconductor layer.
The method of claim 1,
The second electrode may include an ohmic contact portion formed to cover the second conductive semiconductor layer and the insulating portion and contacting a side surface of the second conductive semiconductor layer, and a pad portion formed on the ohmic contact portion. A semiconductor light emitting device.
The method of claim 7, wherein
The ohmic contact portion is a semiconductor light emitting device, characterized in that made of a translucent material.
The method of claim 7, wherein
The ohmic contact portion is a semiconductor light emitting device, characterized in that made of a light reflective material.
The method of claim 1,
The second electrode is a semiconductor light emitting device, characterized in that formed integrally by connecting portions covering each of the plurality of nanorods.
The method of claim 1,
The plurality of nanorods have a side and top surface perpendicular to each other and a semiconductor light emitting device, characterized in that having a slope connecting the side and the top surface.
The method of claim 11,
The top surface of the nanorods is a (0001) plane, the side surface is a (1000) plane, the inclined surface is a (1-101) plane or a (11-22) plane, characterized in that the semiconductor light emitting device.
The method of claim 1,
The active layer and the second conductivity type semiconductor layer is a semiconductor light emitting device, characterized in that formed to maintain a nano-rod shape.
A plurality of nanorods having a first conductivity type semiconductor material;
An active layer formed to cover each of the plurality of nanorods;
A second conductivity type semiconductor layer formed to cover the active layer and having regions having different thicknesses;
A first electrode electrically connected to the plurality of nanorods;
An insulation part formed to cover an area thinner than another area of the surface of the second conductivity type semiconductor layer;
A second electrode formed to cover the second conductive semiconductor layer and the insulating portion and contacting a region of the second conductive semiconductor layer not covered by the insulating portion;
Semiconductor light emitting device comprising a.
Forming an active layer to cover each of the plurality of nanorods having the first conductivity type semiconductor material;
Forming a second conductivity type semiconductor layer to cover the active layer;
Forming an insulating part on an upper surface of the second conductivity type semiconductor layer;
Forming a second electrode covering the second conductive semiconductor layer and the insulating part to be in contact with a side surface of the second conductive semiconductor layer;
Forming a first electrode to be electrically connected to the plurality of nanorods;
Gt; a < / RTI > semiconductor light emitting device.
16. The method of claim 15,
And forming the plurality of nanorods on the first conductive semiconductor layer after forming the first conductive semiconductor layer on the substrate.
The method of claim 16,
The forming of the plurality of nanorods may include forming a dielectric layer having an opening exposing the first conductive semiconductor layer on the first conductive semiconductor layer and forming the plurality of nanorods through the opening. A method for manufacturing a semiconductor light emitting device comprising the step of regrowing a conductive semiconductor material.
The method of claim 17,
The dielectric layer is a semiconductor light emitting device manufacturing method, characterized in that made of the same material as the insulating portion.
16. The method of claim 15,
The forming of the insulating part may include forming an insulating material covering the top and side surfaces of the second conductive semiconductor layer and removing the insulating material covering the side surface of the second conductive semiconductor layer. A semiconductor light emitting device manufacturing method comprising the step of exposing the side of the semiconductor layer.
20. The method of claim 19,
In the forming of the insulating material, the insulating material is a semiconductor light emitting device manufacturing method, characterized in that formed on the upper surface thicker than the side of the second conductive semiconductor layer.
The method of claim 20,
In the exposing the side surface of the second conductive semiconductor layer, the insulating material is a semiconductor light emitting device, characterized in that the portion formed on the side of the second conductive semiconductor layer and the portion formed on the upper surface are removed with the same thickness. Manufacturing method.
The method of claim 21,
The insulating material is a semiconductor light emitting device manufacturing method, characterized in that removed by wet etching.
16. The method of claim 15,
The plurality of nanorods has a side surface and the upper surface perpendicular to each other and a semiconductor light emitting device, characterized in that it has an inclined surface connecting the side and the top surface.

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