KR20120016830A - Semiconductor light emitting device and light emitting device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device and a light emitting device using the same, and an aspect of the present invention includes a substrate, a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer disposed on the substrate. A light emitting structure, at least one hole formed by removing a portion of the light emitting structure so that the first conductive semiconductor layer is exposed, a second conductive semiconductor layer formed on the second conductive semiconductor layer, Provided is a semiconductor light emitting device comprising a second electrode electrically connected to the first conductive semiconductor layer and a first electrode having a light transmitting property formed to cover an inner wall of the hole and an upper surface of the second conductive semiconductor layer. do.
In the case of the semiconductor light emitting device according to the present invention, the external light extraction efficiency can be improved by forming a first electrode having a light transmittance while achieving sufficient current dispersion.

Description

Semiconductor Light Emitting Device and Light Emitting Apparatus

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device and a light emitting device, and more particularly, to a semiconductor light emitting device and a light emitting device having an electrode structure in which light loss caused by an electrode is minimized and current dispersing effect can be improved.

The nitride single crystal constituting the light emitting device using the semiconductor is formed on a specific growth substrate such as sapphire or SiC substrate. However, in the case of using an insulating substrate such as sapphire, the arrangement of electrodes is greatly limited. That is, in the conventional nitride semiconductor light emitting device, since the electrodes are generally arranged in the horizontal direction, the current flow becomes narrow. Due to such a narrow current flow, the operating voltage of the light emitting device is increased to reduce the current efficiency, and at the same time, may be vulnerable to electrostatic discharge. In this case, in order to spread the current uniformly throughout the light emitting surface, there are attempts such as dividing the first conductive type and the second electrode into pads and finger electrodes and alternately disposing each other.

However, current is concentrated around the pad and the finger, and holes and electrons are unevenly injected into the light emitting layer, thereby reducing light emission efficiency. In addition, as the ratio of the pad and the finger is increased, the area occupied by the electrode in the light emitting surface is also increased, and there is a problem in that light loss is caused by the increased electrode area. Accordingly, there is a need in the art for a method of obtaining an electrode structure having excellent current dispersion effect and minimizing light loss.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor light emitting device and a light emitting device in which light loss by the electrode is minimized and current dispersing effect can be improved.

In order to achieve the above object, one aspect of the present invention,

A light emitting structure disposed on the substrate, the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer; and a portion of the light emitting structure to expose the first conductive semiconductor layer. A first electrode having a light transmitting property connected to the at least one hole formed, the first conductive semiconductor layer, and covering an inner wall of the hole and an upper surface of the second conductive semiconductor layer; and the second conductive semiconductor layer A semiconductor light emitting device is formed on and includes a second electrode electrically connected to the second conductivity type semiconductor layer.

In this case, an insulator may be disposed in a region between the first electrode and the second conductive semiconductor layer and a region between the first electrode and the active layer.

In addition, a first electrode pad may be disposed on the first electrode, and a second electrode pad may be disposed in a region in which the first electrode is not positioned above the second conductive semiconductor layer. It may be located above the second conductivity type semiconductor layer.

In addition, two or more holes may be provided, and the light transmitting first electrode may be formed to connect regions of the first conductivity-type semiconductor layer exposed by the two or more holes, and the holes It may be arranged to form one or more columns on the semiconductor light emitting device. In addition, the region excluding the hole may include a region in which the first electrode having the light transmitting property is not formed.

A contact metal may be formed between the first electrode having the light transmission property and the first conductive semiconductor layer.

Another aspect of the invention,

A substrate, a two or more semiconductor light emitting devices disposed on the substrate, and a connection wiring structure electrically connecting the two or more semiconductor light emitting devices to each other and made of a transparent conductive material,

The at least two semiconductor light emitting devices may include a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and a portion of the light emitting structure is removed to expose the first conductive semiconductor layer. A second electrode formed on at least one hole, the second conductive semiconductor layer and electrically connected to the second conductive semiconductor layer, and connected to the first conductive semiconductor layer, the inner wall of the hole and the first It provides a light emitting device comprising a first electrode having a light-transmitting formed to cover the upper surface of the two conductivity type semiconductor layer.

In this case, the connection wiring structure may be formed in which the first electrodes of the plurality of semiconductor light emitting devices are electrically connected to a second conductive semiconductor layer of another semiconductor light emitting device.

In this case, an electrode pad may be further included on the connection wiring structure among regions of the two or more semiconductor light emitting devices, and a contact metal formed between the first electrode and the first conductive semiconductor layer is further included. Light emitting device comprising a.

In the case of the semiconductor light emitting device according to the present invention, the light extraction efficiency can be improved by using a conductive transparent electrode layer while implementing sufficient current dispersion through the hole structure. In addition, it is possible to prevent the area loss of the light emitting layer due to the formation of the pad and the finger in the prior art.

1 (a) and 1 (b) schematically show a semiconductor light emitting device according to an embodiment of the present invention, respectively, and are a plan view and a cross-sectional view taken along line AA ′, respectively.
FIG. 2 illustrates a semiconductor light emitting device provided in a form including a contact metal in the semiconductor light emitting device shown in FIG. 1.
3 to 6 are plan views schematically showing a semiconductor light emitting device according to another embodiment of the present invention, respectively.
7 is a circuit diagram showing some components of a light emitting device according to an embodiment of the present invention as an equivalent circuit.
8A is a plan view schematically illustrating a light emitting device according to an embodiment of the present invention for implementing the circuit diagram of FIG. 7, and FIGS. 8B and 8C are diagrams of FIGS. Are cross-sectional views showing sections of lines BB 'and C-C', respectively.
FIG. 9 is a cross-sectional view of a light emitting device provided in a form including a contact metal in the light emitting device shown in FIG. 8.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. In addition, the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape and size of elements in the drawings may be exaggerated for clarity, and the elements denoted by the same reference numerals in the drawings are the same elements.

1 schematically shows a semiconductor light emitting device according to an embodiment of the present invention. In this case, FIG. 1A is a plan view of the semiconductor light emitting device, and FIG. 1B is a sectional view taken along line A-A 'of the semiconductor light emitting device of FIG.

First, referring to FIGS. 1A and 1B, the semiconductor light emitting device 100 provided in the present embodiment includes a light emitting structure stacked on the substrate 110, and first and second light emitting structures. The second conductivity type semiconductor layers 111 and 121, and first and second electrodes 112 and 122 electrically connected to them, respectively, and first and second electrode pads 113 electrically connected to these electrodes, respectively. , 123, and in particular, the first conductive semiconductor layer 111 and the first electrode 112 have a hole H structure. In this case, the first electrode 112 is disposed in the entire region except for the region where the hole H is formed and the region where the first and second electrode pads 113 and 123 are formed among the upper regions of the light emitting structure. This is to achieve the effect of ultimately improving the luminous efficiency by allowing the current flow to flow in as wide a region as possible without concentrating the partial flow of the semiconductor light emitting device.

Specifically, a light emitting structure is formed on the substrate 110, and the light emitting structure includes a first conductive semiconductor layer 111, an active layer 131, and a second conductive semiconductor layer 121. Corresponds to In this case, although not shown, in order to improve the crystallinity of the semiconductor layer grown thereon between the first conductivity-type semiconductor layer 111 and the substrate 110, one or more buffer layers provided on the side surface are provided. Can be. On some surfaces of the light emitting structure, the second conductive semiconductor layer 121 and the active layer 131 are removed to form a hole H from which the first conductive semiconductor layer 111 is exposed to the outside. In addition, a second electrode 122 is formed on a portion of the second conductive semiconductor layer 121 so as to be electrically connected to the second conductive semiconductor layer 121. A first electrode 112 having light transmission is formed so as to be connected to and cover the inner wall of the hole H and the upper surface of the second conductivity-type semiconductor layer 121. A first electrode pad 113 may be formed on the first electrode 112, and the first electrode 112 and the first electrode pad 113 may be electrically connected to each other, and the second electrode 122 may be formed on the first electrode 112. The second electrode pad 123 is formed in an area in which the first electrode 112 is not disposed. A second electrode pad 123 may be formed on one edge surface of the semiconductor light emitting device 100 in the upper region of the second electrode 122, and the surfaces of the second electrode pad 123 and the hole H may be formed. All surfaces except the insulating layer 141 is formed. That is, the first electrode 112 is formed on the surface of the insulating layer 141 to be electrically connected to the first conductive semiconductor layer 111 through the hole H. A first electrode pad 113 may be formed at an edge of the surface of the first electrode 112 opposite to the second electrode pad 123, and the first electrode 112 and the first electrode pad 113 may be electrically connected. The first electrode pad 113 and the second electrode pad 123 may be located as far as possible in the semiconductor light emitting device 100. By doing so, an improvement in current flow, which is one of the important objects of the present invention, can be effectively achieved.

In addition, the first electrode 112 having a light transmittance transmits a current applied through the first electrode pad 113 to the entire semiconductor light emitting device 100 through holes, and transmits light to be extracted to the outside. It is made of a conductive transparent material, preferably made of indium tin oxide (ITO). The light transmitting first electrode 112 does not necessarily cover the entire surface of the semiconductor light emitting device 100, and may be formed in various shapes as necessary. As such, by forming the first electrode 112 with a material having excellent light transmittance, light can be prevented from being absorbed, reflected, and extinguished, and the light extraction efficiency can be improved.

In addition, the insulating layer 141 may include the first electrode 112 such that the first electrode 112 having light transmissivity does not come into contact with the second electrode 122, the second conductivity type semiconductor layer 121, or the active layer 131. ) Is formed between the second conductive semiconductor layer 121 and the region between the first electrode 112 and the active layer 131, and is formed of a material that optically transmits the light loss.

Next, the current flow of the semiconductor light emitting element provided in this embodiment will be described in detail with reference to FIG. 1 (b). In this case, an arrow indicated by a solid line indicates a flow of electrons, an arrow indicated by a dotted line indicates a flow of holes, and a flow of electrons applied through the first pad 113 is a semiconductor light emitting device 100. It is provided so that it flows on the 1st conductivity type semiconductor 111 through the hole H along the whole surface. In addition, holes applied through the second pad 123 may also flow into the second conductive semiconductor 121 through the second electrode 122 along the entire surface of the LED chip 100.

In the conventional horizontal structure semiconductor light emitting device, pads and fingers are formed at the edges of the devices to achieve current diffusion, but current concentration around the electrodes cannot be avoided, and light efficiency is increased due to high light absorption of the pads and fingers. Although there was a low problem, in the same manner as in the present embodiment, it is possible to obtain the effect that the current is evenly distributed on the entire surface of the semiconductor light emitting device 100, and at the same time, the light extraction efficiency can be improved.

Therefore, the above-described semiconductor light emitting device 100 receives current through the first and second electrode pads 113 and 123 through the first and second electrodes 112 and 122 so as to show an even current distribution throughout the light emitting structure. Will be authorized. In addition, a plurality of holes H may be formed in a part of the light emitting structure so that the first electrode 112 and the first conductive semiconductor layer may be connected to each other. It may be formed to spread and be distributed to further improve current flow characteristics.

In the case of the semiconductor light emitting device provided in this embodiment, the substrate 110 is provided for growth of a nitride semiconductor single crystal, and sapphire, Si, ZnO, GaAs, SiC, MgAl ₂ O ₄ , MgO, LiAlO ₂ , LiGaO ₂ , A substrate made of a material such as GaN can be used. In this case, the sapphire is a Hexa-Rhombo R3c symmetric crystal and the lattice constants of c-axis and a-direction are 13.001 13. and 4.758Å, respectively, C (0001) plane, A (1120) plane, R 1102 surface and the like. In this case, since the C surface is relatively easy to grow a nitride thin film and stable at high temperature, it is mainly used as a substrate for growing a nitride semiconductor.

In addition, the first conductivity type and the second conductivity type semiconductor layers 102 and 104 are nitride semiconductors, specifically, Al _x In _y Ga _(1-xy) N composition formulas, where 0 ≦ x ≦ 1 and 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), for example, a material such as GaN, AlGaN, InGaN, or the like. The active layer 131 formed between the first conductive type and the second conductive type semiconductor layers 111 and 121 emits light having a predetermined energy by recombination of electrons and holes, and the quantum well layer and the quantum barrier layer Multiple quantum well (MQW) structures, such as InGaN / GaN structures, stacked alternately with each other may be used. Meanwhile, the first conductive type and the second conductive type semiconductor layers 111 and 121 and the active layer 131 may be formed using a semiconductor layer growth process such as MOCVD, MBE, HVPE, and the like known in the art.

In addition, the holes H may be formed at one or more locations, and the holes H may be formed to be symmetrical so as not to be biased in a specific area of the semiconductor light emitting device 100 while keeping the distance between the holes H as constant as possible. Desirably, current dispersion may be formed at various locations as needed to exhibit optimal properties. In this case, in the present invention, as shown in FIG. 1, the hole H may have a circular surface formed when the semiconductor light emitting device 100 is viewed from above, but is not particularly limited thereto. Hexagons and the like can be formed into various shapes as necessary.

FIG. 2 is a semiconductor light emitting device according to another embodiment of the present invention, in which the first conductivity-type semiconductor layer 111 and the first electrode 112 do not directly contact each other in the semiconductor light emitting device shown in FIG. A semiconductor light emitting device provided in a form in which a contact metal 250 is formed between components is shown. In this case, except that the contact metal 250 is formed, it is the embodiment of the same structure as the semiconductor light emitting element shown in FIG. As such, by forming the contact metal 250 between the first conductivity-type semiconductor layer 111 and the first electrode 112, the resistance characteristic at the time of applying the current can be further improved.

3 to 6 illustrate a semiconductor light emitting device according to still another embodiment of the present invention. The basic configuration is the same as that of the semiconductor light emitting device shown in FIG. 1, but the formation position of the hole H and the hole ( The semiconductor light emitting element comprised by the form of H) and the form of a 1st electrode is shown.

First, referring to FIG. 3, the insulating layer 341, the first and second electrodes 312 and 322, and the first and second electrode pads 313 and 323 are the semiconductor light emitting device of the embodiment shown in FIG. 1. It can be seen that the same configuration, and provided that the formation position of the hole (H) is formed in a row in a diagonal direction rather than up, down, left, and right.

In addition, referring to FIG. 4, the insulating layer 441, the second electrode 422, the first and second electrode pads 413 and 423, and the hole H are the semiconductor light emitting device of the embodiment illustrated in FIG. 1. It can be seen that the configuration is the same as, except that the shape of the first electrode 412 is not formed on the entire surface of the insulating layer 441, while the hole (H) and the other adjacent hole (H) facing in the diagonal direction In the space of the first electrode 412 is provided in a form that is not formed.

In addition, referring to FIG. 5, the insulating layer 541, the second electrode 522, the first and second electrode pads 513 and 523, and the hole H are the semiconductor light emitting device of the embodiment illustrated in FIG. 1. It can be seen that the configuration is the same as, except that the shape of the first electrode 512 is not formed on the entire surface of the insulating layer 541, a part of the space between the column formed by the hole (H) in the vertical direction, and other adjacent columns The region is provided in a form in which the first electrode 512 is not formed.

6, the insulating layer 441, the second electrode 422, and the first and second electrode pads 413 and 423 have the same configuration as the semiconductor light emitting device of the embodiment shown in FIG. 1. However, the first electrode 412 is not formed on the entire surface of the insulating layer 441, but the first electrode is disposed in a portion of the space between the columns formed by the holes H in the vertical direction and the space between the neighboring columns. 412 is not formed, and the hole H is formed at a diagonal position instead of up, down, left, or right.

As such, according to the embodiment, the optimum current dispersion effect and the resistance characteristic may be obtained through the arrangement of the various holes H and the first electrode.

7 to 8 illustrate an AC driven light emitting device using the semiconductor light emitting device proposed in the present invention. In this case, FIG. 7 is an equivalent diagram showing the components of some of the light emitting devices provided in this embodiment and a coupling relationship thereof. 8A is a plan view schematically illustrating the light emitting device provided in the present embodiment, and FIG. 8B is a side cross-sectional view taken along line B-B 'of the light emitting device shown in FIG. FIG. 8C is a cross-sectional side view taken along line C-C 'of the light emitting device shown in FIG.

First, referring to FIG. 7, light emitting diodes D1 and D2 are provided, which are connected in parallel to both AC electrodes 701 and 702 to which power is applied, and are disposed so that forward directions thereof face opposite directions. This is an example of an equivalent circuit that briefly illustrates some components of FIG. 8 to be described below, and shows a configuration of a light emitting device that can operate even when AC power is applied to both electrodes 701 and 702. That is, when one of the light emitting diodes D1 and D2 is not operated in the reverse direction with respect to the power supply, the other one is complementarily configured to be in the forward direction so that the operation can be performed even when the power supply is an alternating current instead of a direct current. .

8 (a), 8 (b) and 8 (c), the light emitting device according to the embodiment of the present invention includes a light emitting device according to an embodiment of the present invention shown in FIG. The light emitting device is configured by providing two and electrically connecting both light emitting elements in the form of the circuit diagram shown in FIG.

Prior to describing such a configuration in detail, the present invention is not limited to configuring the light emitting device in the same form as the present embodiment by using two semiconductor light emitting elements as in the present embodiment, but the present embodiment For convenience of explanation, hereinafter, the semiconductor light emitting device formed on the left side of the present specification will be described as a 'first semiconductor light emitting device' and the semiconductor light emitting device formed on the right side will be described as a 'second semiconductor light emitting device'. Also, in the present embodiment, the first conductive semiconductor layers 811D1 and 811D2 of the first and second light emitting devices formed in FIG. 8 are n-type, and the second conductive semiconductor layers 821D1 and 821D2 are p-type semiconductor layers. Assuming that the components shown in FIG. 8 will be described in correspondence with the equivalent circuit of FIG. 7, the present invention is not limited thereto, and the n and p types of semiconductor layers may be appropriately selected according to the embodiment. will be. In addition, in the present embodiment, as shown in FIG. 8, the first and second electrodes 812D1 and 812D2 are integrally formed as connection wiring structures for connecting the first and second semiconductor light emitting devices. The present invention is not limited thereto, and the first and second semiconductor light emitting devices may be connected using a light-transmissive conductive material in an appropriate form according to the embodiment.

Now, the light emitting device presented in this embodiment will be described in detail with reference to FIGS. 8A, 8B, and 8C. 8A, 8B, and 8C, one semiconductor light emitting element is formed in common on the left side and the right side. Two first conductive semiconductor layers 811D1 and 811D2 of one of the first and second semiconductor light emitting devices extending from the second conductive semiconductor layer 821D1 and 821D2 of the other semiconductor light emitting device. The electrodes 812D1 and 812D2 connect the first and second structures in the form of legs and are arranged in parallel with each other to form a circulation structure, and the first and second electrodes 812D1 and 812D2 are arranged in the center of each of the parallel electrodes. The second AC electrode pads 801 and 802 are formed to provide AC power. By taking such a shape, it is possible to implement the configuration of the circuit diagram shown in FIG.

That is, the first semiconductor light emitting device corresponds to the light emitting diode D1 formed on the left side in FIG. 7, and the second semiconductor light emitting device corresponds to the light emitting diode D2 formed on the right side in FIG. 7, and the first AC electrode pad ( 801 corresponds to the AC electrode 701 located in the upper part of the circuit diagram in FIG. 7, and the second AC electrode pad 802 corresponds to the AC electrode 702 located in the lower part of the circuit diagram in FIG. 7, and corresponds to the second semiconductor light emitting device. The first electrode of the second semiconductor light emitting element connecting the first conductive semiconductor layer 811D2, the second conductive semiconductor layer 821D1 of the first semiconductor light emitting element, and the first AC electrode pad 801 together ( 812D2 corresponds to a conductive line connecting the left and right light emitting diodes D1 and D2 and the AC electrode 701 located at the top of the circuit diagram in FIG. 7, and the first conductive semiconductor layer 811D1 of the first light emitting device. And a second conductivity type semiconductor of the second light emitting device The first electrode 812D1 of the first semiconductor light emitting device for connecting the 821D2 and the second AC electrode pad 802 together is illustrated in FIG. 7 as the left and right light emitting diodes D1 and D2 and the AC electrode located below the circuit diagram. 702) corresponds to the conductor connecting all at once. As such, the first and second semiconductor light emitting devices have a method in which electrodes having different polarities are connected to each other.

In addition, an area between the first and second semiconductor light emitting devices may be provided as an exposed area where the substrate 810 is exposed, and the first and second structures may cause the first and second structures of the first and second semiconductor light emitting devices to be exposed. The electrical insulation state may be maintained except that the first electrodes 812D1 and 812D2 are connected to each other.

Further, in the present embodiment, the first and second semiconductor light emitting elements are each of the first conductive semiconductor layers 811D1 and 811D2, the active layers 831D1 and 831D2, and the second conductive semiconductor layer on the substrate 810, respectively. At least one hole H formed by removing a portion of the light emitting structure such that the light emitting structure includes 821D1 and 821D2 and exposes the first conductive semiconductor layers 811D1 and 811D2. The second electrodes 822D1 and 822D2 formed on the conductive semiconductor layers 821D1 and 821D2 and connected to the second conductive semiconductor layers 821D1 and 821D2 and the first conductive semiconductor layers 811D1 and 811D2. The first electrode 811D1 of the first semiconductor light emitting device and the first electrode of the second semiconductor light emitting device are formed to cover the inner wall of the hole H and the top surfaces of the second conductive semiconductor layers 821D1 and 821D2. 811D2 is the same as that described in the embodiment of the present invention shown in FIG.

As described above, configuring an AC semiconductor light emitting device by connecting two semiconductor light emitting devices is only an example, and various light emitting devices may be configured by connecting two or more semiconductor light emitting devices in the same manner.

9 is a semiconductor light emitting device according to another embodiment of the present invention. In the cross-sectional view of the semiconductor light emitting device shown in FIG. 8A, the first conductive semiconductor layers 911D1 and 911D2 and the first electrodes 912D1, 912D2 is not directly in contact with each other, and represents a semiconductor light emitting device provided in a form of forming a contact metal 950 between both components. In this case, except that the contact metal 950 is formed, all of the light emitting devices shown in FIG. 8 have the same configuration. In this way, by forming the contact metal 950, the resistance characteristics at the time of applying the current can be further improved.

The present invention is not to be limited by the embodiments described and the accompanying drawings, but is intended to be limited by the appended claims, and various forms of substitutions, modifications, and changes within the scope not departing from the technical spirit of the present invention described in the claims. It will be apparent to those skilled in the art that changes are possible.

H: hole
100: semiconductor light emitting element
110, 210, 810, 910: substrate
111, 211, 311, 411, 511, and 611: first conductive semiconductor layer
121, 221, 321, 421, 521, and 621: second conductive semiconductor layer
131, 231, 331, 431, 531, 631: active layer
112, 212, 312, 412, 512, 612: first electrode
122, 222, 322, 422, 522, 622: second electrode
141, 242, 342, 442, 542, 642: insulating layer
113, 213, 313, 413, 513, 613: first electrode pad
123, 223, 323, 423, 523, 623: second electrode pad
250: contact metal
701: first alternating electrode
702: second alternating electrode
D1, D2: light emitting diode
811D1 and 911D1: first conductive semiconductor layer of the first semiconductor light emitting element
812D1 and 912D1: first electrode of the first semiconductor light emitting element
813D1 and 913D1: first electrode pads of the first semiconductor light emitting element
821D1, 921D1: Second conductive semiconductor layer of the first semiconductor light emitting element
822D1 and 922D1: second electrodes of the first semiconductor light emitting element
823D1 and 923D1: second electrode pads of the first semiconductor light emitting device
831D1 and 931D1: active layers of the first semiconductor light emitting device
841D2 and 941D2: Insulating Layer of Second Semiconductor Light-Emitting Element
811D2 and 911D2: first conductive semiconductor layer of second semiconductor light emitting element
812D2 and 912D2: first electrode of the second semiconductor light emitting element
813D2 and 913D2: first electrode pads of the second semiconductor light emitting element
821D2 and 921D2: second conductive semiconductor layer of second semiconductor light emitting element
822D2 and 922D2: second electrodes of the second semiconductor semiconductor light emitting element
823D2 and 923D2: second electrode pads of the second semiconductor semiconductor light emitting element
831D2 and 931D2: active layers of the second semiconductor light emitting element
841D2 and 941D2: Insulating Layer of Second Semiconductor Light-Emitting Element
950: contact metal

Claims (13)

Board;
A light emitting structure disposed on the substrate, the light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
At least one hole formed by removing a portion of the light emitting structure to expose the first conductivity type semiconductor layer;
A first electrode having a light transmitting property connected to the first conductive semiconductor layer and formed to cover an inner wall of the hole and an upper surface of the second conductive semiconductor layer; And
And a second electrode formed on the second conductive semiconductor layer and electrically connected to the second conductive semiconductor layer. The semiconductor light emitting device of claim 1, further comprising an insulator disposed in a region between the first electrode and the second conductive semiconductor layer and in a region between the first electrode and the active layer. The semiconductor device of claim 1, further comprising a first electrode pad formed on the first electrode and a second electrode pad disposed in a region where the first electrode is not positioned above the second conductive semiconductor layer. A semiconductor light emitting element. The semiconductor light emitting device of claim 3, wherein the first electrode pad is positioned above the second conductivity type semiconductor layer. The semiconductor light emitting device of claim 1, wherein two or more holes are provided. 6. The semiconductor light emitting device of claim 5, wherein the first electrode is formed to connect regions of the first conductivity type semiconductor layer exposed by the two or more holes. The semiconductor light emitting device of claim 6, wherein the holes are arranged to form one or more rows on the semiconductor light emitting device. 8. The semiconductor light emitting device according to claim 7, wherein a portion of the region where the hole is not formed is a region where the first electrode is not formed. The semiconductor light emitting device of claim 1, further comprising a contact metal formed between the first electrode and the first conductive semiconductor layer. Board;
Two or more semiconductor light emitting devices disposed on the substrate;
And electrically connecting the two or more semiconductor light emitting devices to each other and comprising a connection wiring structure made of a transparent conductive material.
The at least two semiconductor light emitting devices may include a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and a portion of the light emitting structure is removed to expose the first conductive semiconductor layer. A second electrode formed on at least one hole, the second conductive semiconductor layer and electrically connected to the second conductive semiconductor layer, and connected to the first conductive semiconductor layer, the inner wall of the hole and the first A light emitting device comprising a first electrode having a light transmitting property formed to cover an upper surface of a two-conducting semiconductor layer. The light emitting device according to claim 10, wherein the connection wiring structure is formed by electrically connecting the first electrodes of the plurality of semiconductor light emitting devices with a second conductive semiconductor layer of another semiconductor light emitting device. The light emitting device of claim 10, further comprising an electrode pad formed on the connection wiring structure among regions of the two or more semiconductor light emitting devices. The light emitting device of claim 10, further comprising a contact metal formed between the first electrode and the first conductive semiconductor layer.

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