KR20110117410A - Nitride semiconductor light emitting device - Google Patents

Abstract

The present invention relates to a nitride semiconductor light emitting device, n-type nitride semiconductor layer; At least one of a plurality of quantum barrier layers and quantum well layers alternately stacked on the n-type nitride semiconductor layer and having a negative interface polarization charge among the quantum barrier layers adjacent to the quantum well layer; An active layer delta-doped with donor impurities at an interface of the quantum barrier layer; It provides a nitride semiconductor light emitting device comprising a; and a p-type nitride semiconductor layer formed on the active layer.

Description

Nitride semiconductor light emitting device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nitride semiconductor light emitting device, and more particularly, to a nitride semiconductor light emitting device in which donor or acceptor impurities are delta doped at an interface between a quantum well layer and an adjacent quantum barrier layer.

Recently, III-V nitride semiconductors such as GaN have been spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their excellent physical and chemical properties. have. Light emitting devices using III-V group nitride semiconductor materials are widely used in light emitting devices for obtaining light in the blue or green wavelength band, and such light emitting devices are used as light sources for various products such as home appliances, electronic displays, general lighting, and headlamps of automobiles. It is applied to.

The conventional nitride semiconductor light emitting device includes a sapphire substrate and an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed thereon. The p-type nitride semiconductor layer and the active layer are mesa-etched to expose a portion of the upper surface of the n-type nitride semiconductor layer, and the n-type and p-type electrodes are provided on the upper surface of the exposed n-type nitride semiconductor layer and the upper surface of the p-type nitride semiconductor layer, respectively. It is.

The active layer may have a multi-quantum well (MQW) structure in which a plurality of GaN quantum barrier layers and an InGaN quantum well layer are alternately stacked, and an n-type nitride semiconductor is applied when a predetermined current is applied to each electrode. Electrons provided from the layer and holes provided from the p-type nitride semiconductor layer are recombined in the active layer of the multi-quantum well structure to emit light.

However, in the active layer of the conventional nitride semiconductor light emitting device, there is a spontaneous polarization inherent in the quantum barrier layer and the quantum well layer, and piezoelectric polarization generated from the lattice constant difference between the two layers. The sum of branch spontaneous polarization and piezoelectric polarization becomes net polarization present in the active layer.

That is, polarization sheet charge is generated at the interface between the quantum barrier layer made of GaN and the quantum well layer made of InGaN, thereby generating an electric field corresponding to several MV / cm in the active layer. It causes energy band bending. The energy band warpage phenomenon causes a decrease in the radiative recombination efficiency by reducing the overlap of electron and hole wave functions in the quantum well layer.

In addition, as the current injection amount increases, electrons that cannot be recombined easily overflow to the p-type nitride semiconductor layer, thereby causing an efficiency droop phenomenon in which quantum efficiency is significantly reduced.

Accordingly, an object of the present invention is to solve the above problems, and an object of the present invention is to delta-dope donor or acceptor impurities at an interface between a quantum well layer and an adjacent quantum barrier layer. The present invention provides a nitride semiconductor light emitting device capable of canceling interfacial polarization charges to improve luminous efficiency.

A nitride semiconductor light emitting device according to an embodiment of the present invention for achieving the above object, an n-type nitride semiconductor layer; At least one of a plurality of quantum barrier layers and quantum well layers alternately stacked on the n-type nitride semiconductor layer and having a negative interface polarization charge among the quantum barrier layers adjacent to the quantum well layer; An active layer delta-doped with donor impurities at an interface of the quantum barrier layer; And a p-type nitride semiconductor layer formed on the active layer.

Here, the donor impurity may be a Group 4 element, and the Group 4 element may include any one of Si, Ge, and Sn.

In addition, the donor impurity may be doped to a density capable of canceling the whole of the negative interfacial polarization charge density of the negative interfacial polarization charge density.

The semiconductor device may further include an electron blocking layer formed between the quantum barrier layer disposed at the top of the quantum barrier layer of the active layer and the p-type nitride semiconductor layer.

In addition, acceptor impurities may be delta doped at an interface between the electron blocking layer and the quantum barrier layer.

In addition, the acceptor impurity may be a Group 2 element, and the Group 2 element may include Mg.

In addition, acceptor impurities may be delta-doped at an interface between at least one quantum well layer having a positive interfacial polarization charge among the quantum well layers adjacent to the quantum barrier layer.

In addition, the acceptor impurity may be a Group 2 element, and the Group 2 element may include Mg.

In addition, the acceptor impurity may be doped to a density capable of canceling the total amount of the interfacial polarization charge density from 0.5 to the total amount of the interfacial polarization charge density.

In addition, the nitride semiconductor light emitting device according to another embodiment of the present invention for achieving the above object, an n-type nitride semiconductor layer; At least one of a plurality of quantum barrier layer and the quantum well layer formed on the n-type nitride semiconductor layer, and alternately stacked, the positive interfacial polarization charge of the quantum well layer adjacent to the quantum barrier layer An active layer having delta doped acceptor impurities at an interface of the quantum well layer; And a p-type nitride semiconductor layer formed on the active layer.

Here, the acceptor impurity may be a Group 2 element, and the Group 2 element may include Mg.

In addition, the acceptor impurity may be doped to a density capable of canceling the total amount of the interfacial polarization charge density from 0.5 to the total amount of the interfacial polarization charge density.

The semiconductor device may further include an electron blocking layer formed between the quantum barrier layer disposed at the top of the quantum barrier layer of the active layer and the p-type nitride semiconductor layer.

In addition, acceptor impurities may be delta doped at an interface between the electron blocking layer and the quantum barrier layer.

In addition, the acceptor impurity may be a Group 2 element, and the Group 2 element may include Mg.

As described above, according to the nitride semiconductor light emitting device according to the present invention, ionization is performed by delta doping of a donor impurity such as Si at the interface between the quantum well layer and the quantum barrier layer in which the negative interfacial polarization charge is present. Donor impurities, i.e., Si ⁺ atoms, can be made to cancel the negative interfacial polarization charge.

Accordingly, the present invention can reduce the electric field polarization in the active layer by reducing the interfacial polarization charge between the quantum barrier layer and the quantum well layer. In addition, the reduction of the electric field in the active layer may suppress the energy band warpage and increase the overlap of the electron and hole wave functions in the quantum well layer. Accordingly, the present invention has the effect of improving the light output by improving the internal quantum efficiency.

In addition, the present invention can be expected to reduce the forward voltage (Vf) by suppressing the energy band bending phenomenon as described above.

In addition, the present invention has the advantage of reducing the droop phenomenon in the high-current region by reducing the generation of the electric field in the active layer.

Therefore, since the present invention can obtain high luminous efficiency at high current as well as low current, it is possible to provide a highly efficient nitride semiconductor light emitting device applicable to various fields such as general lighting devices and automobile head lamps.

1 is a cross-sectional view showing the structure of a nitride semiconductor light emitting device according to the first embodiment of the present invention.
FIG. 2 is an enlarged partial cross-sectional view of the periphery of the active layer of FIG. 1; FIG.
3 is an energy band diagram schematically showing the interfacial polarization charge around the active layer of FIG.
FIG. 3A illustrates the case where the impurities are not delta-doped, and FIG. 3B illustrates the case where the impurities are delta-doped.
4 is a cross-sectional view illustrating a structure of a nitride semiconductor light emitting device according to a second exemplary embodiment of the present invention.
5 is an enlarged partial cross-sectional view of the periphery of the active layer of FIG.
FIG. 6 is an energy band diagram schematically showing interfacial polarization charges around the active layer of FIG. 5.
FIG. 6A illustrates the case where the impurities are not delta-doped, and FIG. 6B illustrates the case where the impurities are delta-doped.
7 is an enlarged partial cross-sectional view of a periphery of an active layer of a nitride semiconductor light emitting device according to a modification of the second exemplary embodiment of the present invention;
FIG. 8 is an energy band diagram schematically showing interfacial polarization charges around the active layer of FIG. 7; FIG.
9 is an enlarged partial cross-sectional view of a periphery of an active layer of a nitride semiconductor light emitting device according to a third exemplary embodiment of the present invention.
FIG. 10 is an energy band diagram schematically showing interfacial polarization charges around the active layer of FIG. 9; FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings of the nitride semiconductor light emitting device. The following embodiments are provided as examples to sufficiently convey the spirit of the present invention to those skilled in the art. Accordingly, the invention is not limited to the embodiments described below and may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.

First, the nitride semiconductor light emitting device according to the first embodiment of the present invention will be described in detail with reference to FIGS. 1 to 3.

1 is a cross-sectional view illustrating a structure of a nitride semiconductor light emitting device according to a first exemplary embodiment of the present invention, and FIG. 2 is an enlarged partial cross-sectional view of the periphery of the active layer of FIG. 1.

1 and 2, the nitride semiconductor light emitting device according to the embodiment of the present invention, the substrate 110, the n-type nitride semiconductor layer 120 formed on the substrate 110, and the n An active layer 130 having a multi-quantum well (MQW) structure formed on the type nitride semiconductor layer 120 and a p-type nitride semiconductor layer 150 formed on the active layer 130 may be included.

Here, the partial region of the p-type nitride semiconductor layer 150 and the active layer 130 is removed by a mesa etching process, a part of the upper surface of the n-type nitride semiconductor layer 120 is exposed, An n-type electrode 160 is formed on the exposed n-type nitride semiconductor layer 120, and a p-type electrode 170 is formed on the p-type nitride semiconductor layer 150.

Although not shown in the drawings, a transparent electrode (not shown) may be further formed on the p-type nitride semiconductor layer 150 under the p-type electrode 170.

The transparent electrode is to improve the current spreading effect by increasing the current injection area, indium tin oxide (ITO), tin oxide (TO), indium zinc oxide (IZO) and indium tin zinc oxide (ITZO) It may be made, including at least one.

The substrate 110 is a substrate suitable for growing a nitride semiconductor single crystal, and may be formed using a transparent material such as sapphire, and in addition to sapphire, zinc oxide (ZnO), gallium nitride (GaN) ), Gallium asenide (GaAs), silicon carbide (SiC), aluminum nitride (AlN), and the like.

The n-type nitride semiconductor layer 120 may be formed of a nitride semiconductor material doped with n-type conductive impurities such as Si as a layer for supplying electrons to the active layer 130. Representative nitride semiconductor materials include GaN, AlGaN, InGaN, and the like. In addition to Si, Ge, Sn, and the like may be used as the n-type conductive impurity doped in the n-type nitride semiconductor layer 120.

The n-type nitride semiconductor layer 120 is composed of an Al _x In _y Ga _(1-xy) N composition formula doped with n-type impurities, where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, and 0 ≦ x + y ≦. 1). As the n-type impurity, Si, Ge, Sn, or the like may be used, of which Si is typically used.

The n-type nitride semiconductor layer 120 is formed on the substrate 110 through a nitride deposition process such as metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or hybrid vapor phase epitaxy (HVPE). Can be.

In general, a buffer layer (not shown) may be formed between the n-type nitride semiconductor layer 120 and the substrate 110 to mitigate lattice mismatch. The buffer layer may be made of GaN or AlN.

The active layer 130 is a layer in which electrons and holes respectively supplied from the n-type nitride semiconductor layer 120 and the p-type nitride semiconductor layer recombine and emit light. The plurality of quantum barrier layers 131 and the quantum well layer 132 are provided. It consists of a multi-quantum well structure stacked alternately.

The quantum barrier layer 131 of the active layer 130 may be formed of a GaN layer or the like, and the quantum well layer 132 may be formed of an InGaN layer or the like.

The p-type nitride semiconductor layer 150 has an Al _x In _y Ga _(1-xy) N composition formula doped with p-type impurities, where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, and 0 ≦ x + y ≦. 1). As the p-type impurity, Mg, Zn or Be or the like may be used, and Mg is representatively used.

The active layer 130 and the p-type nitride semiconductor layer 150 may be formed through a known nitride deposition process such as MOCVD, MBE, or HVPE, like the n-type nitride semiconductor layer 120.

In the nitride semiconductor light emitting device according to the first embodiment of the present invention, at least one quantum barrier in which the negative interface polarization charge δ ⁻ is present among the quantum barrier layer 131 adjacent to the quantum well layer 132. Donor impurities D are delta doped at the interface of the layer 131.

As the donor impurity (D), a Group 4 element such as Si may be used, and in addition to Si, a Group 4 element such as Ge or Sn may be used.

When Si is used as the donor impurity (D), delta doping of Si forms a GaN layer, which is a quantum barrier layer 131, and then stops supply of TEGa (triethylgallium) gas, which is the source gas of the GaN layer. In one state, SiH ₄ gas, which is a source gas of Si, may be supplied for a few seconds, for example, for 1 to 2 seconds.

In the delta doping, since impurities are doped to form an atomic layer of 1 to 2 coverage, the crystallinity of the quantum barrier layer 131 is not reduced by the impurities.

FIG. 3 is an energy band diagram schematically showing the interfacial polarization charge around the active layer of FIG. 2, in which FIG. 3A illustrates delta doping without impurities and FIG. 3B illustrates delta doping of impurities.

First, as illustrated in FIG. 3A, when the dopant is not delta-doped in the active layer 130, the quantum barrier layer 131 and the quantum well layer 132 are formed at the interface between the quantum barrier layer 131 and the quantum well layer 132. Due to the difference in net polarization between), there is a negative interfacial polarization charge (δ ⁻ ) and a positive interfacial polarization charge (δ ⁺ ).

These negative and positive interfacial polarization charges δ ⁻ , δ ⁺ generate polarization-induced electric fields in the active layer 130, causing energy band bending in the active layer 130.

However, like the nitride semiconductor light emitting device according to the first exemplary embodiment of the present invention, the quantum barrier layer in which the negative interface polarization charge δ ⁻ is present in the quantum barrier layer 131 adjacent to the quantum well layer 132 is present. When the donor impurity D such as Si is delta doped at the interface of 131, as shown in FIG. 3B, the ionized donor impurity, i.e., Si ⁺ valence negative interface polarization charge (δ ⁻ ) Can be eliminated completely.

Here, in the present exemplary embodiment, the case where the negative interfacial polarization charge (δ ⁻ ) is canceled to zero through Si delta doping is shown. However, the donor impurity (D) may have a density of the negative interfacial polarization charge (δ ⁻ ). It is preferred to be doped to a density capable of canceling 0.5 to the entirety of the negative interfacial polarization charge δ ⁻ .

This is because when the donor impurity D cancels by a density smaller than 0.5 of the negative interfacial polarization charge δ ⁻ , it may be difficult to sufficiently suppress the generation of a polarization induced electric field in the active layer 130.

In general, an interface polarization sheet charge having a density of about 1e13 / cm 2 to 2e13 / cm 2 exists at the interface between the quantum barrier layer 131 made of the GaN layer and the quantum well layer 132 made of the InGaN layer. .

Thus, for example, when a negative interface polarization charge is present at an interface of the quantum barrier layer 131 and the quantum well layer 132 at a density of 2e13 / cm 2, the donor impurity (D) has an interface of the above-mentioned value. It may be doped to a density of 1e13 / cm 2 to 2e13 / cm 2, which is a density capable of reducing or completely eliminating the polarized charge by more than half.

That is, the donor impurity (D) may be doped at a density of 0.5 or more of the negative interfacial polarization charge density or less.

As described above, in the present embodiment, the delta doping of the donor impurity (D) completely eliminates or halves the negative interfacial polarization charge (δ ⁻ ) among the interfacial polarization charges existing between the quantum barrier layer 131 and the quantum well layer 132. By reducing the above, there is an effect that the generation of the electric field in the active layer 130 can be suppressed to reduce the degree of energy band warpage as shown in FIG. 3B.

Accordingly, in the present exemplary embodiment, the overlapping of the electron and hole wave functions in the quantum well layer 132 may be increased, thereby improving the internal quantum efficiency (IQE), and thus improving the light output of the device.

In addition, when the energy band warpage phenomenon can be suppressed as described above, a reduction effect of the forward voltage Vf can be expected.

In addition, in this embodiment, as described above, by reducing the generation of the electric field in the active layer 130, there is an advantage that can reduce the efficiency droop phenomenon in the high current region.

Therefore, according to the embodiment of the present invention, it is possible to obtain a high luminous efficiency at high current as well as low current, it is possible to provide a nitride semiconductor light emitting device that can be used in headlamps and general lighting devices of automobiles.

Next, the nitride semiconductor light emitting device according to the second embodiment of the present invention will be described in detail with reference to FIGS. 4 to 6.

4 is a cross-sectional view illustrating a structure of a nitride semiconductor light emitting device according to a second exemplary embodiment of the present invention, and FIG. 5 is an enlarged partial cross-sectional view of the periphery of the active layer of FIG. 4.

4 and 5, the nitride semiconductor light emitting device according to the second embodiment of the present invention has the same structure as most of the nitride semiconductor light emitting device according to the first embodiment of the present invention, except that the active layer An electron having an energy band gap greater than that of the p-type nitride semiconductor layer 150 between the quantum barrier layer 131 disposed at the top of the quantum barrier layer 131 of the 130 and the p-type nitride semiconductor layer 150. It differs from the first embodiment only in that it further includes an electron blocking layer (EBL) 140.

The electron blocking layer 140 may be formed of Al _X Ga _(1-X) N (0 < _X ≦ 1), and the p-type nitride semiconductor layer 150 may not be recombined in the active layer of the multi-quantum well structure. This will effectively prevent overflow.

In this case, an acceptor impurity (A) is delta-doped at an interface between the electron blocking layer 140 and the quantum barrier layer 131 adjacent to the electron blocking layer 140. The acceptor impurity (A) may be a Group 2 element such as Mg.

FIG. 6 is an energy band diagram schematically showing the interfacial polarization charge around the active layer of FIG. 5, in which FIG. 6A illustrates the case where the impurities are not delta-doped, and FIG. 6B illustrates the case where the impurities are delta-doped.

As shown in FIG. 6A, when the dopant is not delta-doped in the active layer 130, a negative interface polarization charge is generated at the interface between the quantum barrier layer 131 and the quantum well layer 132 due to the difference in net polarization therebetween. (δ ⁻ ) and positive interfacial polarization charge (δ ⁺ ).

In addition, a positive interface polarization charge (δ ⁺ ) exists at an interface between the quantum barrier layer 131 and the electron blocking layer 140 disposed at the top of the plurality of quantum barrier layers 131 due to the difference in net polarization therebetween. do.

However, like the nitride semiconductor light emitting device according to the second embodiment of the present invention, the quantum barrier layer in which the negative interface polarization charge δ ⁻ is present in the quantum barrier layer 131 adjacent to the quantum well layer 132 is present. A donor impurity (D) such as Si is delta-doped at the interface of 131, and an acceptor impurity (A) such as Mg is delta-doped at the interface of the quantum barrier layer 131 adjacent to the electron blocking layer 140. away to offset a and the amount of the interface polarization charge (δ ^{+) -} atom each interface polarization charge of the negative (δ ^-), the, the ionized donor impurity and an acceptor impurity, i.e. Si ⁺ atoms and Mg, as shown in Figure 6b Can be reduced or reduced.

The nitride semiconductor light emitting device according to the second embodiment of the present invention can obtain the same operation and effect as in the first embodiment of the present invention, and between the active layer 130 and the p-type nitride semiconductor layer 150 Since the electron blocking layer 140 is formed in the electron blocking layer 140, electrons consumed due to overflowing may be reduced to further improve light efficiency of the light emitting device.

Next, a nitride semiconductor light emitting device according to a modification of the second embodiment of the present invention will be described in detail with reference to FIGS. 7 and 8.

FIG. 7 is an enlarged partial cross-sectional view of a periphery of an active layer of a nitride semiconductor light emitting device according to a modification of the second exemplary embodiment of the present invention, and FIG. 8 is an energy band diagram schematically showing the interfacial polarization charge around the active layer of FIG. 7. .

7 and 8, the nitride semiconductor light emitting device according to the modification of the second embodiment of the present invention, the nitride semiconductor light emitting device according to the second embodiment of the present invention shown in Figure 6b and most of the configuration Is the same, but acceptor impurities are formed at the interface of at least one quantum well layer 132 in which the positive interfacial polarization charge δ ⁺ is present in the quantum well layer 132 adjacent to the quantum barrier layer 131. It differs from the second embodiment only in that A) is further delta doped.

In this case, the acceptor impurity (A) may be a Group 2 element such as Mg, and may offset the total of the positive interfacial polarization charge (δ ⁺ ) density from 0.5 to the positive interfacial polarization charge (δ ⁺ ) density. Can be doped to any density.

That is, as shown in FIG. 6B, when acceptor impurities are not doped at the interface of the quantum well layer 132, their net polarization is formed at the interface between the quantum well layer 132 and the quantum barrier layer 131. Due to the difference of positive interfacial polarization charge (δ ⁺ ) is present.

However, in the nitride semiconductor light emitting device according to the modified example of the second embodiment of the present invention, the positive polarization polarization charge δ ⁺ is present in the quantum well layer 132 adjacent to the quantum barrier layer 131 as described above. By further delta doping the acceptor impurity (A), such as Mg, at the interface of the quantum well layer 132, the ionized acceptor impurity, ie, Mg ^- valence positive interface polarization charge (δ ⁺⁾ , as shown in FIG. ) Can be canceled out completely or reduced by more than half.

The nitride semiconductor light emitting device according to the modification of the second embodiment of the present invention can obtain the same operation and effect as in the second embodiment of the present invention, and not only the positive interface polarization charge but also the positive interface polarization charge By canceling, there is an advantage that the degree of energy band warpage can be further reduced and the light efficiency of the light emitting device can be further improved as compared with the second embodiment.

Next, the nitride semiconductor light emitting device according to the third embodiment of the present invention will be described in detail with reference to FIGS. 6A, 9, and 10.

FIG. 9 is an enlarged partial cross-sectional view of an active layer around a nitride semiconductor light emitting device according to a third exemplary embodiment of the present invention, and FIG. 10 is an energy band diagram schematically showing interfacial polarization charges around the active layer of FIG.

9 and 10, the nitride semiconductor light emitting device according to the third embodiment of the present invention has the same structure as that of the nitride semiconductor light emitting device according to the second embodiment of the present invention, except that it is a quantum barrier. At least one of positive interfacial polarization charges (δ ⁺ ) present in the quantum well layer 132 adjacent to the quantum barrier layer 131 instead of delta-doped donor impurity (D) at the interface of the layer 131. The second embodiment differs only in that the acceptor impurity A is delta-doped at the interface of the quantum well layer 132.

That is, as shown in FIG. 6A, when the active layer 130 is not delta-doped with impurities, the negative polarity between the quantum barrier layer 131 and the quantum well layer 132 is negative due to the difference in net polarization therebetween. Interfacial polarization charge (δ ⁻ ) and positive interfacial polarization charge (δ ⁺ ). In addition, a positive interface polarization charge (δ ⁺ ) exists at an interface between the quantum barrier layer 131 and the electron blocking layer 140 disposed at the top of the plurality of quantum barrier layers 131 due to the difference in net polarization therebetween. do.

However, an acceptor impurity (A) such as Mg is formed at the interface between the quantum barrier layer 131 and the quantum well layer 132 adjacent to the quantum well layer 132 where the positive interfacial polarization charge δ ⁺ exists. In the present embodiment in which the dope is delta doped and the acceptor impurity (A) such as Mg is delta-doped at the interface between the electron blocking layer 140 and the quantum barrier layer 131 adjacent to the electron blocking layer 140, as shown in FIG. Separator impurities, i.e., Mg ^- valences, can be eliminated or reduced by counteracting positive interfacial polarized charges (δ ⁺ ).

In this case, the acceptor impurity (A) may be a Group 2 element such as Mg, and may offset the total of the positive interfacial polarization charge (δ ⁺ ) density from 0.5 to the positive interfacial polarization charge (δ ⁺ ) density. Can be doped to any density.

In the nitride semiconductor light emitting device according to the third embodiment of the present invention, the interfacial polarization charge existing between the quantum barrier layer 131 and the quantum well layer 132 through delta doping of acceptor impurities A such as Mg. By eliminating or reducing by more than half of the positive interfacial polarization charge (δ ⁺ ), the same effects and effects as in the second embodiment of the present invention can be obtained.

Preferred embodiments of the present invention described above are disclosed for the purpose of illustration, and various substitutions, modifications, and changes within the scope without departing from the spirit of the present invention for those skilled in the art to which the present invention pertains. It will be possible, but such substitutions, changes and the like should be regarded as belonging to the following claims.

110: substrate
120: n-type nitride semiconductor layer
130: active layer
131: quantum barrier layer
132: quantum well layer
140: p-type nitride semiconductor layer
150: electronic blocking layer
160: n-type electrode
170: p-type electrode
D: donor impurities
A: acceptor impurity

Claims (20)

an n-type nitride semiconductor layer;
At least one of a plurality of quantum barrier layers and quantum well layers alternately stacked on the n-type nitride semiconductor layer and having a negative interface polarization charge among the quantum barrier layers adjacent to the quantum well layer; An active layer delta-doped with donor impurities at an interface of the quantum barrier layer; And
A p-type nitride semiconductor layer formed on the active layer;
Nitride semiconductor light emitting device comprising a.
The method of claim 1,
The donor impurity is a nitride semiconductor light emitting device, characterized in that the element.
The method of claim 2,
The group IV element includes any one of Si, Ge, and Sn.
The method of claim 1,
The donor impurity is nitride semiconductor light emitting device, characterized in that doped to a density capable of canceling the whole of the negative interface polarization charge density of the negative interface polarization charge density.
The method of claim 1,
And an electron blocking layer formed between the quantum barrier layer disposed at the top of the quantum barrier layer of the active layer and the p-type nitride semiconductor layer.
The method of claim 5,
A nitride semiconductor light emitting device according to claim 1, wherein acceptor impurities are delta doped at an interface between the electron blocking layer and the quantum barrier layer.
The method of claim 6,
And the acceptor impurity is a Group 2 element.
The method of claim 7, wherein
The group 2 element is nitride semiconductor light emitting device, characterized in that containing Mg.
The method of claim 1,
And an acceptor impurity delta-doped at an interface between at least one quantum well layer having positive interfacial polarization charges in the quantum well layer adjacent to the quantum barrier layer.
10. The method of claim 9,
And the acceptor impurity is a Group 2 element.
The method of claim 10,
The group 2 element is nitride semiconductor light emitting device, characterized in that containing Mg.
10. The method of claim 9,
The acceptor impurity is nitride semiconductor light emitting device, characterized in that the doped to a density capable of canceling the whole of the positive interfacial polarization charge density of the positive interfacial polarization charge density.
an n-type nitride semiconductor layer;
At least one of a plurality of quantum barrier layer and the quantum well layer formed on the n-type nitride semiconductor layer, and alternately stacked, the positive interfacial polarization charge of the quantum well layer adjacent to the quantum barrier layer An active layer having delta doped acceptor impurities at an interface of the quantum well layer; And
A p-type nitride semiconductor layer formed on the active layer;
Nitride semiconductor light emitting device comprising a.
The method of claim 13,
And the acceptor impurity is a Group 2 element.
The method of claim 14,
The group 2 element is nitride semiconductor light emitting device, characterized in that containing Mg.
The method of claim 13,
The acceptor impurity is nitride semiconductor light emitting device, characterized in that the doped to a density capable of canceling the whole of the positive interfacial polarization charge density of the positive interfacial polarization charge density.
The method of claim 13,
And an electron blocking layer formed between the quantum barrier layer disposed at the top of the quantum barrier layer of the active layer and the p-type nitride semiconductor layer.
The method of claim 17,
A nitride semiconductor light emitting device according to claim 1, wherein acceptor impurities are delta doped at an interface between the electron blocking layer and the quantum barrier layer.
The method of claim 18,
And the acceptor impurity is a Group 2 element.
20. The method of claim 19,
The group 2 element is nitride semiconductor light emitting device, characterized in that containing Mg.

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