KR20110076388A - Mold Process Film for Semiconductor Package - Google Patents
Mold Process Film for Semiconductor Package Download PDFInfo
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- KR20110076388A KR20110076388A KR1020090133087A KR20090133087A KR20110076388A KR 20110076388 A KR20110076388 A KR 20110076388A KR 1020090133087 A KR1020090133087 A KR 1020090133087A KR 20090133087 A KR20090133087 A KR 20090133087A KR 20110076388 A KR20110076388 A KR 20110076388A
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18165—Exposing the passive side of the semiconductor or solid-state body of a wire bonded chip
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Abstract
본 발명은 반도체 패키지용 몰드공정필름에 관한 것으로서, 보다 상세하게는 몰딩공정시 리드와 단자의 노출부분을 밀접하게 마스킹하여, 몰딩 수지로부터 리드와 단자를 보호하고, 몰딩 공정 후에는 리드와 단자 및 몰딩수지와 닿는 면에서 원활히 제거되며, 또한 몰드공정이 진행된 후, 몰딩된 표면에 요철을 형성하여 패키지를 개개의 칩으로 분리하기 위한 펀칭 공정시 칩 가장자리의 깨짐을 방지하여 펀칭공정시 효율을 극대화 할 수 있는 반도체 패키지용 몰드공정필름에 관한 것이다. 이를 위해 본 발명에 따른 반도체 패키지용 몰드공정필름은 한쪽 면을 코로나 처리한 기재필름과, 상기 기재필름의 코로나 처리된 면에 도포된 점착층으로서, 아크릴계 폴리머와 입자, 자외선 경화형 아크릴레이트 올리고머, 광개시제 및 경화제를 포함하는 점착제 조성물로 도포되되, 2~30㎛의 두께를 가지는 점착층을 포함하는 것을 특징으로 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mold process film for a semiconductor package, and more particularly, to closely mask an exposed portion of a lead and a terminal during a molding process, thereby protecting the lead and the terminal from a molding resin, and after the molding process, the lead and the terminal and It is smoothly removed from the surface in contact with the molding resin, and after the mold process is progressed, the unevenness is formed on the molded surface to prevent cracking of the chip edge during the punching process to separate the package into individual chips, thereby maximizing the efficiency during the punching process. It relates to a mold process film for a semiconductor package that can be. To this end, the mold process film for a semiconductor package according to the present invention is a base film treated with a corona treatment on one side, and an adhesive layer applied to the corona treated side of the base film, and includes an acrylic polymer and particles, an ultraviolet curable acrylate oligomer, and a photoinitiator. And it is applied to the pressure-sensitive adhesive composition comprising a curing agent, characterized in that it comprises an adhesive layer having a thickness of 2 ~ 30㎛.
반도체패키지, 몰드공정필름, 점착제 Semiconductor Package, Mold Process Film, Adhesive
Description
본 발명은 반도체 패키지용 몰드공정필름에 관한 것으로서, 보다 상세하게는 몰딩공정시 리드와 단자의 노출부분을 밀접하게 마스킹하여, 몰딩 수지로부터 리드와 단자를 보호하고, 몰딩 공정 후에는 리드와 단자 및 몰딩수지와 닿는 면에서 원활히 제거되며, 또한 몰드공정이 진행된 후, 몰딩된 표면에 요철을 형성하여 패키지를 개개의 칩으로 분리하기 위한 펀칭 공정시 칩 가장자리의 깨짐을 방지하여 펀칭공정시 효율을 극대화 할 수 있는 반도체 패키지용 몰드공정필름에 관한 것이다.BACKGROUND OF THE
최근 전자기기의 소형화, 경량화, 박형화와 같은 시장의 요구에 의해 고집적, 고기능, 고성능의 다양한 반도체 패키지의 수요가 급속히 증가함에 따라 새로운 패키지 개발이 중요하게 부각되었다. 이러한 수요로 인하여 칩사이즈 패키지 또는 칩스케일 패키지(chip size package or chip scale package, CSP)를 포함하는 고밀도 실장에 대응한 다양한 패키지의 개발이 가속적으로 진행되고 있다. 칩사이즈 패키지는 칩 사이즈와 동등 또는 약간 큰 패키지를 총칭하는 것으로, 기존의 패키지의 파생품으로 볼 그리드 어레이(ball grid array, BGA), 랜드 그리드 어레 이(land grid array, LGA), 스몰 아웃라인 노-리드 패키지(small outline no-lead package, SON) 및 쿼드 플렛 노-리드 패키지(quad flat no-lead package, QFN) 등으로 구성된다. 이 중 본 발명의 몰드공정 필름은 스몰 아웃라인 노-리드 패키지(SON)와 쿼드 플렛 노-리드 패키지(QFN)의 몰딩공정시에 적용 가능하다.Recently, due to the demand of the market such as miniaturization, light weight, and thinning of electronic devices, the development of new packages has been important as the demand of various semiconductor packages of high integration, high performance, and high performance rapidly increases. Due to this demand, development of various packages corresponding to high-density packaging including chip size packages or chip scale packages (CSPs) is being accelerated. Chip size packages are generic to packages that are equal to or slightly larger than the chip size, and are derivatives of conventional packages such as ball grid arrays (BGAs), land grid arrays (LGA), and small outlines. It consists of a small outline no-lead package (SON) and a quad flat no-lead package (QFN). Among them, the mold process film of the present invention can be applied at the time of molding process of small outline no-lead package (SON) and quad flat no-lead package (QFN).
이러한 몰드공정 필름은 몰딩공정시 리드와 단자의 노출부분을 밀접하게 마스킹하여, 몰딩 수지로부터 리드와 단자를 보호하고, 몰딩 공정 후에는 리드와 단자 및 몰딩수지와 닿는 면에서 원활히 제거되어야 한다. 또한 몰드공정 후, 패키지를 개개의 칩으로 분리하기 위한 펀칭 공정시 칩의 가장자리의 깨짐 없이 분리되어야만 한다.Such a mold process film should closely mask the exposed portions of the lead and the terminal during the molding process to protect the lead and the terminal from the molding resin, and after the molding process should be removed smoothly in contact with the lead, the terminal and the molding resin. In addition, after the molding process, the punching process for separating the package into individual chips must be separated without cracking the edge of the chip.
기존의 몰딩공정필름은 몰딩공정시 리드와 단자의 노출부분을 밀접하게 마스킹하여, 몰딩 수지로부터 리드와 단자를 보호하고, 몰딩 공정 후에는 리드와 단자 및 몰딩수지와 닿는 면에서 원활히 제거되어야 하는 물성에 초점을 맞추어 이형성이 우수하면서 열수축율(%)을 제어한 기재필름을 사용하거나(대한민국 공개특허번호2000-0071391참조), 기재필름에 에틸렌/테트라플루오로에틸렌계 공중합체등의 불소 수지와 같은 이형성이 우수한 물질을 형성하는 방법이 있다 (대한민국 공개특허번호 2009-0018032 참조). Existing molding process film closely masks exposed part of lead and terminal during molding process to protect lead and terminal from molding resin, and after molding process, it should be removed smoothly in contact with lead, terminal and molding resin. Focus on the use of a base film having excellent release properties and controlling the thermal shrinkage (%) (see Korean Laid-Open Patent No. 2000-0071391), or a base film such as a fluorine resin such as ethylene / tetrafluoroethylene copolymer. There is a method of forming a material having excellent releasability (see Korean Patent Publication No. 2009-0018032).
그러나, 이러한 종래의 기술은 몰딩공정시 리드와 단자의 노출부분을 밀접하게 마스킹하여, 몰딩 수지로부터 리드와 단자를 보호하고, 몰딩 공정 후에는 리드와 단자 및 몰딩수지와 닿는 면에서 원활히 제거되어야 하는 물성 이외에 몰딩 후 얻어지는 몰딩면이 매끈하게 얻어지므로 개개의 칩으로 분리하기 위해 펀칭공정작 업시 충격이 가해져 크랙(crack)이 생기면 칩의 깨짐이 발생하게 되어 펀칭공정시 효율저하가 우려된다.However, such a conventional technique closely masks the exposed portions of the leads and terminals during the molding process, thereby protecting the leads and terminals from the molding resin, and after the molding process, the lead and terminals and the molding resin should be smoothly removed. In addition to the physical properties, the molding surface obtained after molding is smoothly obtained, so that an impact is applied during the punching process in order to separate the individual chips, and if cracks occur, chip breakage may occur, resulting in a decrease in efficiency during the punching process.
상기와 같은 문제의 해결을 위하여 몰딩공정시 리드와 단자의 노출부분을 밀접하게 마스킹하여, 몰딩 수지로부터 리드와 단자를 보호하고, 몰딩 공정 후에는 리드와 단자 및 몰딩수지와 닿는 면에서 원활히 제거되며, 또한 몰드공정이 진행된 후, 몰딩된 표면에 요철을 형성하여 패키지를 개개의 칩으로 분리하기 위한 펀칭 공정시 칩의 가장자리의 깨짐을 방지하여 펀칭공정의 효율을 극대화 할 수 있는 몰드공정필름이 필요한 실정이다.In order to solve the above problems, the exposed part of the lead and the terminal are closely masked during the molding process to protect the lead and the terminal from the molding resin, and after the molding process, the lead and the terminal and the molding resin are smoothly removed. In addition, after the mold process is progressed, a molding process film is needed to prevent the cracking of the edges of the chip during the punching process for forming irregularities on the molded surface to separate the package into individual chips. It is true.
본 발명은 상기와 같은 문제점을 해결하기 위해 안출한 것으로서, 본 발명의 목적은 몰딩공정시 리드와 단자의 노출부분을 밀접하게 마스킹하여, 몰딩 수지로부터 리드와 단자를 보호하고, 몰딩 공정 후에는 리드와 단자 및 몰딩수지와 닿는 면에서 원활히 제거되며, 또한 몰드공정이 진행된 후, 몰딩된 표면에 요철을 형성하여 패키지를 개개의 칩으로 분리하기 위한 펀칭 공정시 칩 가장자리의 깨짐을 방지하여 펀칭공정시 효율을 극대화 할 수 있는 반도체 패키지용 몰드공정필름을 제공하고자 하는 것이다.The present invention has been made to solve the above problems, an object of the present invention is to closely mask the exposed portion of the lead and the terminal during the molding process, to protect the lead and the terminal from the molding resin, and after the molding process When the punching process prevents cracking of the edges of the chip during the punching process to separate the package into individual chips by forming irregularities on the molded surface after the mold process is progressed. It is to provide a mold process film for semiconductor packages that can maximize efficiency.
본 발명의 상기 및 다른 목적과 이점은 바람직한 실시예를 설명한 하기의 설명으로부터 보다 분명해질 것이다.These and other objects and advantages of the present invention will become more apparent from the following description of preferred embodiments.
상기 목적은, 한쪽 면을 코로나 처리한 기재필름과, 상기 기재필름의 코로나 처리된 면에 도포된 점착층으로서, 아크릴계 폴리머와 입자, 자외선 경화형 아크릴레이트 올리고머, 광개시제 및 경화제를 포함하는 점착제 조성물로 도포되되, 2~30㎛의 두께를 가지는 점착층을 포함하는 것을 특징으로 것을 특징으로 하는 반도체 패키지용 몰드공정필름에 의해 달성된다.The object is an adhesive layer coated on one side of the corona-treated base film and the corona-treated side of the base film, and coated with an adhesive composition comprising an acrylic polymer and particles, an ultraviolet curable acrylate oligomer, a photoinitiator and a curing agent. Is achieved by a mold process film for a semiconductor package, characterized in that it comprises an adhesive layer having a thickness of 2 ~ 30㎛.
여기서, 상기 점착제 조성물은 상기 아크릴계 폴리머 100중량부에 대하여 5~100중량부의 상기 입자, 10~200중량부의 상기 자외선 경화형 아크릴레이트 올리고머, 0.6~5중량부의 상기 광개시제 및 0.5~5중량부의 상기 경화제를 포함하는 것 을 특징으로 한다.Here, the pressure-sensitive adhesive composition is 5 to 100 parts by weight of the particles, 10 to 200 parts by weight of the ultraviolet curable acrylate oligomer, 0.6 to 5 parts by weight of the photoinitiator and 0.5 to 5 parts by weight of the curing agent with respect to 100 parts by weight of the acrylic polymer It is characterized by including.
바람직하게는, 상기 입자는 유기입자로서, 0.5~ 50㎛ 의 크기를 갖는 것을 특징으로 한다.Preferably, the particles are organic particles, characterized in that having a size of 0.5 ~ 50㎛.
바람직하게는, 상기 입자의 최소 크기 및 최대 크기는 상기 점착층 두께에 대해 30% 내지 200%인 것을 특징으로 한다.Preferably, the minimum size and the maximum size of the particles are characterized in that 30% to 200% with respect to the thickness of the adhesive layer.
바람직하게는, 상기 아크릴계 폴리머의 분자량은 100,000~1,500,000인 것을 특징으로 한다.Preferably, the molecular weight of the acrylic polymer is characterized in that 100,000 ~ 1,500,000.
본 발명에 따르면, 몰딩공정시 리드와 단자의 노출부분을 밀접하게 마스킹하여, 몰딩 수지로부터 리드와 단자를 보호하고, 몰딩 공정 후에는 리드와 단자 및 몰딩수지와 닿는 면에서 원활히 제거되며, 또한 몰드공정이 진행된 후, 몰딩된 표면에 요철을 형성하여 패키지를 개개의 칩으로 분리하기 위한 펀칭 공정시 칩 가장자리의 깨짐을 방지하여 펀칭공정시 효율을 극대화 할 수 있는 등의 효과를 가진다.According to the present invention, the exposed part of the lead and the terminal are closely masked during the molding process to protect the lead and the terminal from the molding resin, and after the molding process, the lead and the terminal and the molding resin are smoothly removed from the surface and the mold is also removed. After the process is progressed, forming irregularities on the molded surface to prevent cracking of the chip edge during the punching process for separating the package into individual chips, such as to maximize the efficiency during the punching process.
이하, 본 발명의 실시예와 도면을 참조하여 본 발명을 상세히 설명한다. 이들 실시예는 오로지 본 발명을 보다 구체적으로 설명하기 위해 예시적으로 제시한 것일 뿐, 본 발명의 범위가 이들 실시예에 의해 제한되지 않는다는 것은 당업계에서 통상의 지식을 가지는 자에 있어서 자명할 것이다.Hereinafter, the present invention will be described in detail with reference to embodiments and drawings of the present invention. These examples are only presented by way of example only to more specifically describe the present invention, it will be apparent to those skilled in the art that the scope of the present invention is not limited by these examples. .
도 1은 본 발명에 따른 반도체 패키지용 몰드공정필름의 단면도이고, 도 2a, 2b, 2c, 2d 및 2e는 반도체 패키지 공정 중, 와이어 본딩공정 후 몰드공정 필름을 마스킹하여 EMC몰딩하는 공정을 차례로 설명하기 위한 도면들이다.1 is a cross-sectional view of a mold process film for a semiconductor package according to the present invention, Figures 2a, 2b, 2c, 2d and 2e sequentially describes the process of EMC molding by masking the mold process film after the wire bonding process during the semiconductor package process Drawings for the following.
본 발명에 따른 반도체 패키지용 몰드공정필름은 요구물성을 확보하기 위하여 기재필름 위에 입자를 포함하는 점착층을 형성하는 2층 구조를 채택하였고, 점착층에 자외선경화기술을 활용하여 몰드공정필름의 이형성과 입자를 포함하는 점착층의 내구성을 충족시키는 것을 특징으로 한다. The mold process film for semiconductor package according to the present invention adopts a two-layer structure for forming a pressure-sensitive adhesive layer containing particles on the base film in order to secure the required properties, the release of the mold process film by utilizing ultraviolet curing technology in the adhesive layer It is characterized by satisfying the durability of the pressure-sensitive adhesive layer containing the performance particles.
보다 상세하게는, 본 발명에 따른 반도체 패키지용 몰드공정필름은 한쪽 면을 코로나 처리한 기재필름과 상기 기재필름의 코로나 처리된 면에 도포된 점착층으로서, 아크릴계 폴리머와 입자, 자외선 경화형 아크릴레이트 올리고머, 광개시제 및 경화제를 포함하는 점착제 조성물로 도포되되, 2~30㎛의 두께를 가지는 점착층을 포함하는 것을 특징으로 것을 특징으로 한다.More specifically, the mold process film for a semiconductor package according to the present invention is an adhesive layer coated on one side of the corona-treated base film and the corona-treated side of the base film, the acrylic polymer and particles, UV curable acrylate oligomer It is applied to the pressure-sensitive adhesive composition comprising a photoinitiator and a curing agent, characterized in that it comprises an adhesive layer having a thickness of 2 ~ 30㎛.
상기 기재필름은 폴리이미드 필름, 폴리에틸렌테레프탈레이트 필름, 폴리에틸렌나프탈레이트 필름 및 폴리부틸렌테레프탈레이트 필름 같은 폴리에스테르 필름 등을 들 수 있다. 상기 기재필름의 두께는 통상 10~100㎛이며, 바람직하게는 20~50㎛이다. 또한 상기 기재필름은 점착층과의 밀착성, 유지성 등을 높이기 위해서 매트처리, 코로나 방전처리, 프라이머 처리 및 가교결합 처리와 같은 통상적인 물리 또는 화학적인 표면처리가 실시될 수 있다.The base film may be a polyester film such as a polyimide film, polyethylene terephthalate film, polyethylene naphthalate film and polybutylene terephthalate film. The thickness of the said base film is 10-100 micrometers normally, Preferably it is 20-50 micrometers. In addition, the base film may be subjected to conventional physical or chemical surface treatments such as mat treatment, corona discharge treatment, primer treatment, and crosslinking treatment in order to increase adhesion to the adhesive layer, retention, and the like.
또한 본 발명에 따른 점착제 조성물에 사용되는 아크릴계 폴리머는 (메타)아크릴레이트 폴리머를 사용할 수 있으며, 그 예로는 메틸아크릴레이트, 에틸아크릴레이트, 프로필아크릴레이트, 부틸아크릴레이트, 옥틸아크릴레이트, 부틸메타크릴 레이트, 2-에틸헥실메타크릴레이트 또는 옥틸메타크릴레이트 등이 있다. 이들 아크릴계 폴리머는 단독 또는 2종 이상 혼합하여 사용할 수 있다. 특히, 분자량은 바람직하게는 100,000~1,500,000이며, 더욱 바람직하게는 500,000~1,000,000까지의 범위인 것이 점착제의 응집력을 높이고, 다른 첨가물과의 상용성을 높이는데 유리하다. In addition, the acrylic polymer used in the pressure-sensitive adhesive composition according to the present invention may be a (meth) acrylate polymer, for example methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, octyl acrylate, butyl methacryl Latex, 2-ethylhexyl methacrylate or octyl methacrylate. These acrylic polymers can be used individually or in mixture of 2 or more types. In particular, the molecular weight is preferably 100,000 to 1,500,000, and more preferably in the range of 500,000 to 1,000,000, it is advantageous to increase the cohesive force of the pressure-sensitive adhesive and to improve the compatibility with other additives.
또한 본 발명에 따른 점착제 조성물의 상기 아크릴계 폴리머는 경화제를 사용하여 응집력을 임의의 값으로 설정하여 조절이 가능하다. 이러한 경화제로서는 다가 이소시아네이트 화합물, 멜라민 수지, 폴리아민, 카르복시기 함유 폴리머 등을 들 수 있다. 상기 경화제는 상기 아크릴계 폴리머 100중량부에 대하여 0.5~5중량부로 포함되는 것이 바람직하다.In addition, the acrylic polymer of the pressure-sensitive adhesive composition according to the present invention can be adjusted by setting the cohesion force to an arbitrary value using a curing agent. As such a hardening | curing agent, a polyhydric isocyanate compound, a melamine resin, a polyamine, a carboxyl group-containing polymer, etc. are mentioned. It is preferable that the hardening | curing agent is contained in 0.5-5 weight part with respect to 100 weight part of said acrylic polymers.
또한 본 발명에 따른 점착제 조성물의 상기 입자는 그 종류에 크게 제한을 두지 않으며, 그 예로는 메틸메타크릴레이트, 에틸메타크릴레이트, 이소부틸메타크릴레이트, 노말부틸메타크릴레이크, 노말부틸메틸메타크릴레이트, 아크릴산, 메타크릴산, 히드록시에틸메타크릴레이트, 히드록시프로필메타크릴레이트, 히드록시 에틸아크릴레이트, 아크릴레이트, 메티롤아크릴아미드, 글리시딜메타크릴레이트, 에틸아크릴레이트, 이소부틸아크릴레이트, 노말부틸아크릴레이트, 2-헥실아크릴레이드 중합체 혹은 공중합체 등의 아크릴계, 폴리에틸렌, 폴리스타이렌, 폴리프로필렌 등의 올레핀계 입자, 아크릴과 올레핀계의 공중합체 그 외 실리콘 수지 등의 유기입자와 경질 탄산칼슘, 실리카, 황산바륨, 산화나트륨, 황산나트륨, 고령토, 카오린, 탈크 등의 무기입자를 들 수 있다. 이 중 유기 입자를 사용하는 것이 제품선택 의 용이성, 점착층에 적절한 분산성을 위해 적용하기에 적합하다. 상기 입자는 상기 아크릴계 폴리머 100중량부에 대하여 5~100중량부로 포함될 수 있으며, 바람직하게는 20~60중량부로 포함될 수 있다. 또한 입자는 단독 혹은 2종 이상 혼합하여 사용할 수 있다. 또한 상기 입자의 최소 크기 및 최대 크기는 상기 점착층 두께에 대해 30% 내지 200%인 것이 바람직하다.In addition, the particles of the pressure-sensitive adhesive composition according to the present invention is not limited to the kind, for example, methyl methacrylate, ethyl methacrylate, isobutyl methacrylate, normal butyl methacrylate, normal butyl methyl methacrylate Acrylate, acrylic acid, methacrylic acid, hydroxyethyl methacrylate, hydroxypropyl methacrylate, hydroxyethyl acrylate, acrylate, metyrolacrylamide, glycidyl methacrylate, ethyl acrylate, isobutyl acryl Olefinic particles such as acryl, polyethylene, polystyrene and polypropylene, such as acrylate, normal butyl acrylate, 2-hexyl acrylate polymer or copolymer, copolymers of acryl and olefin and other organic particles such as silicone resin and hard carbonic acid No calcium, silica, barium sulfate, sodium oxide, sodium sulfate, kaolin, kaolin, talc A writer. Among them, the use of organic particles is suitable for application for ease of product selection and proper dispersibility in the adhesive layer. The particles may be included in 5 to 100 parts by weight based on 100 parts by weight of the acrylic polymer, preferably 20 to 60 parts by weight. Moreover, particle | grains can be used individually or in mixture of 2 or more types. In addition, the minimum size and the maximum size of the particles are preferably 30% to 200% with respect to the thickness of the adhesive layer.
또한 본 발명에 따른 상기 점착층은 열경화 이후에 추가적인 가교 구조를 통해 내부망상구조(IPN,interpenetrating network structure)를 형성하여 몰드공정필름의 이형성과 입자를 포함하는 점착층의 내구성을 확보하기 위하여 자외선 경화형으로 설계하는 것이 바람직하다. 이를 위한 상기 자외선 경화형 아크릴레이트 올리고머(또는 모노머)는 하나 이상의 탄소-탄소 이중결합을 분자 내에 가지고 있는 저분자 화합물로서 광 조사에 의해 3차원 망상구조를 형성할 수 있는 것을 널리 사용한다. 이러한 자외선 경화형으로 사용되는 화합물의 예로는 트리메틸올프로판 트리아크릴레이트, 테트라메틸올 메탄 테트라아크릴레이트, 펜타에리스리톨 트리아크릴레이트, 디펜타에리스리톨 모노히드록시 펜타아크릴레이트, 디펜타에리스피톨 헥사아크릴레이트, 우레탄 아크릴레이트, 폴리에테르 및 폴리에스터 아크릴레이트, 에폭시 아크릴레이트, 그리고 아크릴릭 아크릴레이트 등과 같은 아크릴레이트 화합물을 포함한다. 그 중 본 발명에서는 자외선 조사시 빠른 속도로 경화가 진행되고 경화도를 높이기 위해 관능기 3~8관능의 아크릴레이트 올리고머를 단독 또는 두 종 이상 혼합하여 사용하는 것이 바람직하다. 상기 자외선 경화형 아크릴레이트 올리고머의 함유량은 아크릴계 폴리머 점착제 100중량부에 대해 통상 10~200중량부가 사용되며, 바람직하게는 30~100중량부가 사용된다.In addition, the pressure-sensitive adhesive layer according to the present invention forms an internal network structure (IPN) through an additional crosslinking structure after thermal curing, so as to secure the release property of the mold process film and durability of the pressure-sensitive adhesive layer including particles. It is preferable to design in a hardening type. The ultraviolet curable acrylate oligomer (or monomer) for this purpose is widely used as a low molecular compound having at least one carbon-carbon double bond in a molecule, which can form a three-dimensional network structure by light irradiation. Examples of the compound used in such UV curing type include trimethylolpropane triacrylate, tetramethylol methane tetraacrylate, pentaerythritol triacrylate, dipentaerythritol monohydroxy pentaacrylate, dipentaerythritol hexaacrylate, urethane Acrylate compounds such as acrylates, polyethers and polyester acrylates, epoxy acrylates, acrylic acrylates, and the like. Among them, in the present invention, it is preferable to use a mixture of three or more functional acrylate oligomers alone or in combination of two or more functional groups to cure at a rapid rate during ultraviolet irradiation and to increase the degree of curing. As for content of the said ultraviolet curable acrylate oligomer, 10-200 weight part is used normally with respect to 100 weight part of acrylic polymer adhesives, Preferably 30-100 weight part is used.
또한 본 발명에 따른 점착제 조성물에서 상기 자외선 경화형 아크릴레이트 올리고머의 경화를 촉진하기 위하여 사용하는 상기 광개시제는 벤질다이메틸케탈, 하이드록시싸이클로헥실 페닐 케톤, 4-벤질-4’-메틸다이페닐설파이드, 아이소프로필티옥산톤, 2-클로로티옥산톤, 에틸-4-다이메틸아미노벤조에이트, 2-에틸헥실-4-다이메틸아미노벤조에이트, 4-메틸벤조페논, 메틸-오르소-벤조-벤조에이트, 메틸벤조일포메이트, 4-페닐벤조페논, 2,4,6-트라이메틸벤조일-다이페닐 포스핀, 2-하이드록시-1,2-다이페닐 에타논벤조페논, 아세토페논, 벤조인, 벤조인 메틸 에테르, 벤조인 에틸 에테르, 벤조인 안식향산, 벤조인디메틸케탈 등이 있다. 이러한 광개시제는 개시를 원하는 조건 및 개시제의 효율 및 특성에 따라 단독 또는 2종 이상을 혼합하여 사용하기도 한다. 상기 광개시제는 자외선 경화형 올리고머의 100중량부에 대해 일반적으로 0.01~15중량부, 바람직하게는 1.0~10중량부, 더욱 바람직하게는 2~5중량부의 비율(상기 아크릴계 폴리머 100중량부 기준으로는 상기 광개시제 0.6~5중량부)로 사용된다.In addition, the photoinitiator used to promote curing of the ultraviolet curable acrylate oligomer in the pressure-sensitive adhesive composition according to the present invention benzyldimethyl ketal, hydroxycyclohexyl phenyl ketone, 4-benzyl-4'-methyldiphenyl sulfide, iso Propyl thioxanthone, 2-chlorothioxanthone, ethyl-4-dimethylaminobenzoate, 2-ethylhexyl-4-dimethylaminobenzoate, 4-methylbenzophenone, methyl-ortho-benzo-benzoate , Methylbenzoylformate, 4-phenylbenzophenone, 2,4,6-trimethylbenzoyl-diphenyl phosphine, 2-hydroxy-1,2-diphenyl ethanone benzophenone, acetophenone, benzoin, benzo Phosphorus methyl ether, benzoin ethyl ether, benzoin benzoic acid, benzoin dimethyl ketal and the like. Such photoinitiators may be used alone or in combination of two or more according to the conditions to be initiated and the efficiency and characteristics of the initiator. The photoinitiator is generally 0.01 to 15 parts by weight, preferably 1.0 to 10 parts by weight, and more preferably 2 to 5 parts by weight, based on 100 parts by weight of the ultraviolet curable oligomer (based on 100 parts by weight of the acrylic polymer) Photoinitiator 0.6-5 parts by weight).
또한 본 발명에 따른 점착제 조성물은 상기 성분 이외에 용매 및 광증감제, 노화방지제, 레벨링제와 같은 첨가제를 추가로 사용할 수 있다. 또한 점착층의 두께가 너무 얇으면 포함하는 입자를 적절히 분포하고, 드러나게 할 수 없고, 두께가 너무 두꺼우면 입자가 점착층 표면에 드러나지 않아 적절한 요철을 형성하기 어려우며 또한 원활한 자외선 경화효율을 기대하기 어렵고, 이로 인해 점착층의 물성이 저하되어 공정시 가해지는 압력과 자극에 취약하게 된다. 따라서 상기 점착층의 두 께는 2~30㎛인 것이 바람직하다.In addition, the pressure-sensitive adhesive composition according to the present invention may further use additives such as solvents and photosensitizers, anti-aging agents, leveling agents in addition to the above components. In addition, if the thickness of the adhesive layer is too thin, the particles to be included may not be properly distributed and exposed, and if the thickness is too thick, the particles may not be exposed to the surface of the adhesive layer, making it difficult to form appropriate irregularities, and it is difficult to expect smooth ultraviolet curing efficiency. As a result, the physical properties of the pressure-sensitive adhesive layer is lowered, making it vulnerable to pressure and stimulus applied during the process. Therefore, the thickness of the adhesive layer is preferably 2 ~ 30㎛.
이하, 본 발명의 실시예를 참조하여 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to examples of the present invention.
[실시예 1]Example 1
기재필름으로서, 한쪽면에 코로나 처리한 PET(50㎛)를 사용하고, 통상의 아크릴계 폴리머(고형분 30중량%의 농도) 100중량부와 평균입경이 10㎛인 폴리메틸메타크릴레이트 입자(소켄, 상품명 MX-1000) 30중량부와 5관능의 자외선 경화형 아크릴레이트 올리고머(유성화학, 상품명 SE-1656)와 자외선 경화형 실리콘 아크릴레이트 올리고머(에스케이사이텍, 상품명 Ebecryl 1360)를 혼합하여 50중량부, 광개시제(시바 스페셜티 케미칼, 상품명 Irgaqure-2100) 4중량부, 경화제(주식회사 삼원, 상품명 SAMVINOL SM-20) 5중량부를 첨가하여 제조한 자외선 경화형 조성물을 기재필름의 코로나 처리면에 8㎛두께로 점착층을 형성하고, 자외선을 조사하였다.As the base film, 100 parts by weight of a normal acrylic polymer (concentration of solid content of 30% by weight) and a polymethyl methacrylate particle (soken, MX-1000) 30 parts by weight, a 5-functional UV-curable acrylate oligomer (oil chemical, trade name SE-1656) and a UV-curable silicone acrylate oligomer (EsciCytec, trade name Ebecryl 1360) by mixing 50 parts by weight, photoinitiator ( A UV curable composition prepared by adding 4 parts by weight of Ciba Specialty Chemical, Irgaqure-2100) and 5 parts by weight of a curing agent (Samwon Co., Ltd., SAMVINOL SM-20) to form an adhesive layer on the corona treated surface of the base film with a thickness of 8 μm. And ultraviolet light was irradiated.
[실시예 2][Example 2]
실시예 1과 동일한 방법으로 점착층을 형성하되, 단 입자의 평균입경이 5㎛(MX-500)이며, 점착층의 두께가 4㎛이다.A pressure-sensitive adhesive layer was formed in the same manner as in Example 1 except that the average particle diameter of the single particles was 5 μm (MX-500) and the thickness of the pressure-sensitive adhesive layer was 4 μm.
[실시예 3]Example 3
실시예 1과 동일한 방법으로 점착층을 형성하되, 단 입자의 종류가 평균입경이 5㎛인 스타이렌(SX-500H)이며, 점착층의 두께가 4㎛이다.A pressure-sensitive adhesive layer was formed in the same manner as in Example 1 except that the type of single particles was styrene (SX-500H) having an average particle diameter of 5 μm, and the thickness of the pressure-sensitive adhesive layer was 4 μm.
[비교예 1]Comparative Example 1
실시예 1과 동일한 방법으로 점착층을 형성하되, 단 점착제 층의 두께가 40㎛ 이다.A pressure-sensitive adhesive layer was formed in the same manner as in Example 1 except that the pressure-sensitive adhesive layer had a thickness of 40 μm.
[비교예 2]Comparative Example 2
실시예 1과 동일한 방법으로 점착층을 형성하되, 단 자외선을 조사하지 않았다.A pressure-sensitive adhesive layer was formed in the same manner as in Example 1 except that no ultraviolet light was irradiated.
[비교예 3]Comparative Example 3
실시예 1과 동일한 방법으로 점착층을 형성하되, 단 입자를 첨가하지 않았다.An adhesive layer was formed in the same manner as in Example 1 except that no particles were added.
다음으로, 본 발명에서 사용한 물성시험법과 그 결과를 기재한다.Next, the physical property test used in the present invention and the results are described.
[실험예 1: 표면 거칠기 측정]Experimental Example 1 Surface Roughness Measurement
제작된 몰드공정 필름의 표면거칠기 값을 ACCRETECH의 SURFCOM1500SD2를 이용하여 JIS-01' 규격으로 측정되며, 그 Ra결과를 아래의 표 1에 나타내었다.The surface roughness value of the produced mold process film was measured according to JIS-01 'standard using SURFCOM1500SD2 of ACCRETECH, and the Ra results are shown in Table 1 below.
[실험예 2: 몰딩 공정시 몰딩 효율]Experimental Example 2: Molding Efficiency in Molding Process
몰딩공정을 거친 후, 패키지의 몰드수지의 샘 발생 여부 및 리드프레임, 단자부 및 EMC몰드 표면의 점착층 잔사 및 오염 등의 확인을 통해 몰딩공정이 원활하게 진행되었는지 여부를 확인하였다. 몰드수지의 샘 및 점착층 잔사 및 오염이 발생되지 않아 몰딩 효율이 좋으면 ○, 그렇지 않으면 X로 표기하기로 하며, 그 결과를 아래의 표1에 나타내었다.After the molding process, it was checked whether the molding process proceeded smoothly by checking whether or not leakage of the mold resin of the package occurred and the adhesion layer residue and contamination on the surface of the lead frame, the terminal part, and the EMC mold. If the molding efficiency is good because the spring and adhesive layer residue and contamination of the mold resin is not good, otherwise it will be denoted by X, the results are shown in Table 1 below.
[실험예 3: 펀칭공정시 펀칭작업효율]Experimental Example 3: Punching work efficiency during punching process
몰드공정이 진행된 후, 패키지를 개개의 칩으로 분리하기 위한 펀칭 공정시 칩의 가장자리의 몰딩부분의 깨짐없이 펀칭공정이 원활하게 진행되는지의 여부를 확인하였다. 전체 칩 개수 108개를 기준으로 관찰하여, 칩의 깨짐 발생이 5개 이하 로 발생하면 ○, 20개 이하로 발생하면△, 20개 이상이면 X 라고 정하여, 펀칭시 작업 효율을 나타내었다.After the mold process was progressed, it was checked whether the punching process proceeded smoothly without cracking the molding part of the edge of the chip during the punching process for separating the package into individual chips. Based on the total number of chips of 108, the chip breakage occurred when 5 or less chips were generated, and when 20 or less chips were generated, △, and 20 or more, X was set.
[표 1]TABLE 1
상기 표 1에서 확인할 수 있는 바와 같이, 본 발명에 따른 실시예의 경우 입자 혼입을 통하여 입자 혼입하기 전과 비교하여, 표면거칠기 값의 확인으로부터 표면의 요철형성을 확인할 수 있고, 또한 그 요철이 몰딩 공정시 피착제의 몰딩된 부분의 요철을 형성하여 그로 인해 펀칭공정시 펀칭공정 효율을 높일 수 있다는 것을 알 수 있다.As can be seen in Table 1, in the case of the embodiment according to the present invention, the surface roughness can be confirmed from the confirmation of the surface roughness value compared to before the particle mixing through the particle incorporation, and the unevenness is formed during the molding process. It can be seen that the unevenness of the molded part of the adherend can be formed, thereby increasing the punching process efficiency during the punching process.
본 명세서에서는 본 발명자들이 수행한 다양한 실시예와 분석실험 가운데 몇 개의 예만을 들어 설명하는 것이나 본 발명의 기술적 사상은 이에 한정하거나 제한되지 않고, 당업자의 제작환경에 의해 변형되어 다양하게 실시될 수 있음은 물론이다.In the present specification, only a few examples of various embodiments and analytical experiments performed by the present inventors are described, but the technical idea of the present invention is not limited thereto, and may be variously modified and modified by production environments of those skilled in the art. Of course.
도 1은 본 발명에 따른 반도체 패키지용 몰드공정필름의 단면도이고,1 is a cross-sectional view of a mold process film for a semiconductor package according to the present invention,
도 2a, 2b, 2c, 2d 및 2e는 반도체 패키지 공정 중, 와이어 본딩공정 후 몰드공정필름을 마스킹하여 EMC몰딩하는 공정을 차례로 설명하기 위한 도면들이다.2A, 2B, 2C, 2D, and 2E are diagrams for sequentially describing a process of EMC molding by masking a mold process film after a wire bonding process during a semiconductor package process.
<도면의 주요부분에 대한 부호의 간단한 설명>BRIEF DESCRIPTION OF THE DRAWINGS FIG.
1 : 기재필름 2 : 점착층1: base film 2: adhesive layer
3 : 칩 4 : 와이어3: chip 4: wire
5 : 단자 6 : EMC5: terminal 6: EMC
7 : 상판몰드 8 : 하판몰드7: upper plate mold 8: lower plate mold
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090133087A KR20110076388A (en) | 2009-12-29 | 2009-12-29 | Mold Process Film for Semiconductor Package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090133087A KR20110076388A (en) | 2009-12-29 | 2009-12-29 | Mold Process Film for Semiconductor Package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20110076388A true KR20110076388A (en) | 2011-07-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020090133087A Withdrawn KR20110076388A (en) | 2009-12-29 | 2009-12-29 | Mold Process Film for Semiconductor Package |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8922024B2 (en) | 2012-05-04 | 2014-12-30 | Samsung Electronics Co., Ltd. | Semiconductor packages including molding layers |
| WO2024247356A1 (en) * | 2023-06-02 | 2024-12-05 | 日東電工株式会社 | Adhesive sheet for manufacturing semiconductor package |
-
2009
- 2009-12-29 KR KR1020090133087A patent/KR20110076388A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8922024B2 (en) | 2012-05-04 | 2014-12-30 | Samsung Electronics Co., Ltd. | Semiconductor packages including molding layers |
| WO2024247356A1 (en) * | 2023-06-02 | 2024-12-05 | 日東電工株式会社 | Adhesive sheet for manufacturing semiconductor package |
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