KR20100066219A - Liquid crystal display device and method of fabricating the same - Google Patents

Abstract

The liquid crystal display of the present invention and a method of manufacturing the same are for improving the aperture ratio of a pixel region by forming a light blocking film with a data line on a gate line and forming a pixel electrode to overlap the light blocking film, thereby reducing the width of the black matrix. A gate electrode and a gate line formed on the array substrate; A gate insulating layer formed on the array substrate on which the gate electrode and the gate line are formed; An active pattern formed on the gate insulating layer; A data line defining a pixel region crossing the source / drain electrode electrically connected to the source / drain region of the active pattern and the gate line; A light blocking film formed on the gate line and formed of a conductive film constituting the source / drain electrode and the data line; A passivation layer formed on the array substrate on which the source / drain electrodes, the data line, and the light blocking layer are formed; A contact hole exposing a portion of the drain electrode by removing a portion of the passivation layer; A pixel electrode electrically connected to the drain electrode through the contact hole; And a color filter substrate bonded to face the array substrate.

Description

Liquid crystal display and its manufacturing method {LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device and a method for manufacturing the same, and more particularly, to a liquid crystal display device and a method for manufacturing the same having improved aperture ratio of a pixel region.

Recently, with increasing interest in information display and increasing demand for using a portable information carrier, a lightweight flat panel display (FPD), which replaces a conventional display device, a cathode ray tube (CRT), is used. The research and commercialization of Korea is focused on. In particular, the liquid crystal display (LCD) of the flat panel display device is an image representing the image using the optical anisotropy of the liquid crystal, is excellent in resolution, color display and image quality, and is actively applied to notebooks or desktop monitors have.

The liquid crystal display is largely composed of a color filter substrate and an array substrate, and a liquid crystal layer formed between the color filter substrate and the array substrate.

The active matrix (AM) method, which is a driving method mainly used in the liquid crystal display device, uses an amorphous silicon thin film transistor (a-Si TFT) as a switching device to drive the liquid crystal in the pixel portion. to be.

Hereinafter, a structure of a general liquid crystal display device will be described in detail with reference to FIG. 1.

1 is an exploded perspective view schematically illustrating a general liquid crystal display.

As shown in the figure, the liquid crystal display device is largely a liquid crystal layer (liquid crystal layer) formed between the color filter substrate 5 and the array substrate 10 and the color filter substrate 5 and the array substrate 10 ( 30).

The color filter substrate 5 includes a color filter C composed of a plurality of sub-color filters 7 for implementing colors of red (R), green (G), and blue (B); A black matrix 6 that separates the sub-color filters 7 and blocks light passing through the liquid crystal layer 30, and a transparent common electrode that applies a voltage to the liquid crystal layer 30. 8)

In addition, the array substrate 10 may be arranged vertically and horizontally to define a plurality of gate lines 16 and data lines 17 and a plurality of gate lines 16 and data lines 17 that define a plurality of pixel regions P. The thin film transistor T, which is a switching element formed in the cross region, and the pixel electrode 18 formed on the pixel region P, are formed.

The color filter substrate 5 and the array substrate 10 configured as described above are joined to face each other by sealants (not shown) formed on the outer side of the image display area to form a liquid crystal display market value. 5) and the array substrate 10 are bonded through a bonding key (not shown) formed in the color filter substrate 5 or the array substrate 10.

FIG. 2 is a plan view schematically illustrating a portion of an array substrate of a general liquid crystal display, and FIG. 3 is a cross-sectional view schematically illustrating a liquid crystal display panel in which the array substrate illustrated in FIG. 2 and the color filter substrate opposing thereto are bonded.

As shown in the figure, a gate line 16 and a data line 17 are formed on the array substrate 10 to be arranged vertically and horizontally on the array substrate 10 to define a pixel area. In addition, a thin film transistor, which is a switching element, is formed in an intersection area of the gate line 16 and the data line 17, and the common electrode 8 of the color filter substrate 5 is connected to the thin film transistor in the pixel area. ), A pixel electrode 18 for driving the liquid crystal layer 30 is formed.

The thin film transistor includes a gate electrode 21 constituting a part of the gate line 16, a source electrode 22 connected to the data line 17, and a drain electrode 23 connected to the pixel electrode 18. It is. In addition, the thin film transistor includes an active pattern 24 that forms a conductive channel between the source electrode 22 and the drain electrode 23 by the gate voltage supplied to the gate electrode 21.

In this case, a part of the source electrode 22 extends in one direction to form a part of the data line 17, and a part of the drain electrode 23 extends toward the pixel area to form a contact hole formed in the passivation layer 15b. Electrically connected to the pixel electrode 18 through 40.

At this time, a part of the common line 12 arranged in the pixel area in the direction of the gate line 16 overlaps a part of the pixel electrode 18 therebetween with the gate insulating film 15a and the passivation film 15b interposed therebetween. As a result, a storage capacitor Cst is formed.

The array substrate 10 as described above is bonded to face the color filter substrate 5 by a sealant (not shown) formed outside the image display area to form the liquid crystal display device 1.

As described above, the color filter substrate 5 distinguishes between the color filter 7 composed of a plurality of sub-color filters that implements red, green, and blue colors and the sub-color filter, and separates the liquid crystal layer 30. It consists of a black matrix (6) for blocking the transmitted light, and a transparent common electrode (8) for applying a voltage to the liquid crystal layer (30).

In the general liquid crystal display device 1 configured as described above, the pixel electrode 18 thereon is disposed at a predetermined distance from the gate line 16 to prevent the liquid crystal from being arranged in an undesired direction due to signal interference of the gate line 16. On the other hand, the black matrix 6 is formed on the color filter substrate 5 on the gate line 16. In particular, as described above, while blocking the light transmitted through the liquid crystals arranged in an undesired direction, the upper part of the gate line 16 may be disposed in consideration of an alignment error caused by the adhesion of the color filter substrate 5 and the array substrate 10. The black matrix 6 is formed to overlap a part of the edge of the pixel electrode 18.

In this case, reference numeral W denotes the width of the black matrix 6 formed on the gate line 16, and the aperture ratio of the pixel region decreases as it is formed to overlap a part of the edges of the adjacent pixel electrodes 18. Will occur.

This reduction in aperture ratio is particularly problematic in a structure in which the shape of the pixel region is elongated horizontally.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a liquid crystal display device and a method of manufacturing the same for improving the aperture ratio.

Other objects and features of the present invention will be described in the configuration and claims of the invention described below.

In order to achieve the above object, the manufacturing method of the liquid crystal display device of the present invention comprises the steps of forming a gate electrode and a gate line on the array substrate; Forming a gate insulating film on the array substrate on which the gate electrode and the gate line are formed; Forming an active pattern on the gate insulating layer; Forming a data line defining a pixel region by crossing the source / drain electrode electrically connected to the source / drain region of the active pattern and the gate line, and forming a light shielding layer on the gate line; Forming a passivation layer on the array substrate on which the source / drain electrodes, the data line, and the light blocking layer are formed; Removing a portion of the passivation layer to form a contact hole exposing a portion of the drain electrode; Forming a pixel electrode electrically connected to the drain electrode through the contact hole; And bonding the array substrate and the color filter substrate.

A liquid crystal display of the present invention includes a gate electrode and a gate line formed on an array substrate; A gate insulating film formed on the array substrate on which the gate electrode and the gate line are formed; An active pattern formed on the gate insulating layer; A data line defining a pixel region crossing the source / drain electrode electrically connected to the source / drain region of the active pattern and the gate line; A light blocking film formed on the gate line and formed of a conductive film constituting the source / drain electrode and the data line; A passivation layer formed on the array substrate on which the source / drain electrodes, the data line, and the light blocking layer are formed; A contact hole exposing a portion of the drain electrode by removing a portion of the passivation layer; A pixel electrode electrically connected to the drain electrode through the contact hole; And a color filter substrate bonded to face the array substrate.

As described above, the liquid crystal display device and the manufacturing method thereof according to the present invention provide an effect of improving the transmittance of the liquid crystal display device due to the improvement of the aperture ratio of the pixel region.

Hereinafter, exemplary embodiments of a liquid crystal display and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

4 is a plan view schematically illustrating a portion of an array substrate of a liquid crystal display according to a first exemplary embodiment of the present invention.

At this time, in the actual liquid crystal display device, N gate lines and M data lines cross each other, and there are M × N pixels. However, for simplicity, one pixel is shown in the drawing.

FIG. 5 is a cross-sectional view schematically illustrating a liquid crystal display device according to a first embodiment of the present invention in which the array substrate shown in FIG. 4 and the color filter substrate opposite to each other are bonded to each other. The cross-sectional structure of the display device is shown as an example.

As shown in the drawing, in the array substrate 110 according to the first embodiment of the present invention, a gate line 116 and a data line 117 are arranged vertically and horizontally on the array substrate 110 to define a pixel area. Formed. In addition, a thin film transistor, which is a switching element, is formed in an intersection area between the gate line 116 and the data line 117, and the common electrode 108 of the color filter substrate 105 is connected to the thin film transistor in the pixel area. And a pixel electrode 118 for driving the liquid crystal layer 130.

The thin film transistor includes a gate electrode 121 constituting part of the gate line 116, a source electrode 122 connected to the data line 117, and a drain electrode 123 connected to the pixel electrode 118. It is. In addition, the thin film transistor includes an active pattern 124 that forms a conductive channel between the source electrode 122 and the drain electrode 123 by a gate voltage supplied to the gate electrode 121. For reference, reference numeral 125n denotes an ohmic contact layer for ohmic contact between the source / drain region of the active pattern 124 and the source / drain electrodes 122 and 123 thereon.

In this case, a part of the source electrode 122 extends in one direction to form a part of the data line 117, and a part of the drain electrode 123 extends toward the pixel area to form a contact hole formed in the passivation layer 115b. It is electrically connected to the pixel electrode 118 through 140.

In this case, the common line 112 is arranged in the pixel area in the direction of the gate line 116, and a part of the common line 112 is disposed between the gate insulating layer 115a and the passivation layer 115b. The storage capacitor Cst is formed by overlapping a portion of the upper pixel electrode 118. The storage capacitor Cst keeps the voltage applied to the liquid crystal capacitor constant until the next signal comes in. That is, the pixel electrode 118 of the array substrate 110 forms a liquid crystal capacitor together with the common electrode 108 of the color filter substrate 105. In general, a voltage applied to the liquid crystal capacitor is applied when a next signal is input. It cannot be maintained until it is leaked and disappears. Therefore, in order to maintain the applied voltage, the storage capacitor Cst needs to be connected to the liquid crystal capacitor.

The storage capacitor Cst has effects such as stability of gray scale display and reduction of flicker and afterimage in addition to signal retention.

The liquid crystal display device 101 according to the first exemplary embodiment of the present invention configures the source / drain electrodes 122 and 123 and the data line 117 on the gate insulating film 115a on the gate line 116. A light shielding film 126 made of data wirings is formed.

The array substrate 110 as described above is bonded to face the color filter substrate 105 by a sealant (not shown) formed outside the image display area to form the liquid crystal display device 101.

The color filter substrate 105 distinguishes between the color filter 107 composed of a plurality of sub-color filters that implements red, green, and blue colors and the sub-color filter, and transmits light transmitted through the liquid crystal layer 130. The blocking black matrix 106 and the transparent common electrode 108 applying a voltage to the liquid crystal layer 130 are formed.

As described above, the liquid crystal display device 101 according to the first exemplary embodiment of the present invention forms a light blocking film 126 on the gate line 116 with data wirings, and overlaps the pixel electrode so as to overlap the light blocking film 126. By forming 118, the width W ′ of the black matrix 106 on the gate line 116 can be reduced (W → W ′), thereby improving the aperture ratio of the pixel region.

That is, by forming an electrically shielded light shielding film 126 between the gate line 116 and the vertical structure of the pixel electrode 118, it is possible to block signal interference from the lower gate line 116. As a result, the pixel electrode 118 may be formed to partially overlap the light blocking film 126 and the gate line 116 thereunder, thereby reducing the width W ′ of the black matrix 106 above the gate line 116. Will be.

Meanwhile, the liquid crystal display according to the first exemplary embodiment of the present invention is an example in which an array substrate is formed through five mask processes, but the present invention is not limited thereto. It can be applied regardless of the number of mask processes as long as a light shielding film is formed by data wirings and a pixel electrode is formed so as to overlap the light shielding film.

FIG. 6 is a schematic cross-sectional view of a liquid crystal display according to a second exemplary embodiment of the present invention, and illustrates a liquid crystal display of a four mask process in which an active pattern, a data line, and a light shielding film are formed through one mask process. have.

As shown in the drawing, in the array substrate 210 according to the second embodiment of the present invention, a gate line 216 and a data line (not shown) are arranged vertically and horizontally on the array substrate 210 to define a pixel area. Is formed. In addition, a thin film transistor, which is a switching element, is formed in an intersection region of the gate line 216 and the data line, and is connected to the thin film transistor in the pixel region, and is connected to the common electrode 208 of the color filter substrate 205. The pixel electrode 218 for driving the liquid crystal layer 230 is formed.

The thin film transistor includes a gate electrode 221 constituting a portion of the gate line 216, a source electrode 222 connected to the data line, and a drain electrode 223 connected to the pixel electrode 218. In addition, the thin film transistor includes an active pattern 224 that forms a conductive channel between the source electrode 222 and the drain electrode 223 by a gate voltage supplied to the gate electrode 221. For reference, reference numeral 225n denotes an ohmic contact layer for ohmic contact between the source / drain region of the active pattern 224 and the source / drain electrodes 222 and 223 thereon.

In this case, a part of the source electrode 222 extends in one direction to form a part of the data line, and a part of the drain electrode 223 extends toward the pixel area to extend the contact hole formed in the passivation layer 215b. It is electrically connected to the pixel electrode 218.

Here, the liquid crystal display device 201 according to the second embodiment of the present invention is the same as the liquid crystal display device according to the first embodiment of the present invention described above on the gate insulating film 215a on the gate line 216. And a light shielding film 226 formed of the / drain electrodes 222 and 223 and the data wirings constituting the data line.

However, the liquid crystal display 201 according to the second exemplary embodiment of the present invention forms the active pattern 224, the source / drain electrodes 222 and 223, and the light shielding film 226 through one mask process. An amorphous silicon thin film and an n + amorphous silicon thin film are formed below the light blocking film 226, and the amorphous silicon thin film pattern 224 ′ and the n + amorphous silicon thin film pattern 225 ′ that are patterned in substantially the same shape as the light blocking film 226 are formed. Will be.

The array substrate 210 as described above is bonded to face the color filter substrate 205 by a sealant (not shown) formed outside the image display area to form the liquid crystal display device 201.

The color filter substrate 205 distinguishes between the color filter 207 composed of a plurality of sub-color filters that implements red, green, and blue colors and the sub-color filter, and transmits the light passing through the liquid crystal layer 230. The blocking black matrix 206 and the transparent common electrode 208 applying a voltage to the liquid crystal layer 230 are formed.

As described above, the liquid crystal display according to the second exemplary embodiment of the present invention uses one mask using a half-tone mask or a diffraction mask (hereinafter, referred to as a half-tone mask). By forming an active pattern, a data line, and a light shielding film in the process, an array substrate can be fabricated in the fourth mask process, which will be described in detail with the following manufacturing method of the liquid crystal display.

7A to 7D are plan views sequentially illustrating a manufacturing process of the array substrate illustrated in FIG. 6, and FIGS. 8A to 8D are cross-sectional views sequentially illustrating a manufacturing process of the array substrate illustrated in FIG. 6.

As shown in FIGS. 7A and 8A, a gate electrode 221, a gate line 216, and a common line 212 are formed on an array substrate 210 made of a transparent insulating material such as glass.

In this case, the gate electrode 221, the gate line 216, and the common line 212 may be selectively patterned through a photolithography process (first mask process) after depositing a first conductive layer on the entire surface of the array substrate 210. To form.

Here, the first conductive layer may include aluminum (Al), aluminum alloy (Al alloy), tungsten (W), copper (Cu), chromium (Cr), molybdenum (Mo), Low resistance opaque conductive materials such as molybdenum alloys (Mo alloy) can be used. In addition, the first conductive film may be formed in a multilayer structure in which two or more low-resistance conductive materials are stacked.

Next, as shown in FIGS. 7B and 8B, the gate insulating layer 215a and the amorphous silicon thin film are formed on the entire surface of the array substrate 210 on which the gate electrode 221, the gate line 216, and the common line 212 are formed. and depositing the n + amorphous silicon thin film and the second conductive film, and then selectively removing them through a photolithography process (second mask process) to form an active pattern 224 of the amorphous silicon thin film on the array substrate 210. Meanwhile, source / drain electrodes 222 and 223 formed of the second conductive layer and electrically connected to the source / drain regions of the active pattern 224 are formed.

In addition, a data line 217 formed of the second conductive layer through the second mask process and crossing the gate line 216 to define a pixel region is formed, and a light shielding layer is formed on the gate line 216. 226 is formed.

In this case, an ohmic contact layer 225n formed of the n + amorphous silicon thin film and patterned in the same form as the source / drain electrodes 222 and 223 is formed on the active pattern 224.

In addition, the amorphous silicon thin film pattern 224 ′ and the n + amorphous silicon thin film pattern 225 ′ formed of the amorphous silicon thin film and the n + amorphous silicon thin film, respectively, and patterned in the same shape as the light shielding film 226. ) Is formed.

Here, the active pattern 224, the source / drain electrodes 222 and 223, the data line 217, and the light blocking layer 226 according to the second embodiment of the present invention are once masked using a half-tone mask. (2nd mask process) can be formed simultaneously.

In this case, the second conductive layer may be made of a low resistance opaque conductive material such as aluminum, aluminum alloy, tungsten, copper, chromium, molybdenum and molybdenum alloy to form a source / drain electrode, a data line, and a light blocking layer. In addition, the second conductive layer may be formed in a multilayer structure in which two or more low-resistance conductive materials are stacked.

Next, as illustrated in FIGS. 7C and 8C, an entire surface of the array substrate 210 on which the active patterns 224, the source / drain electrodes 222 and 223, the data lines 217, and the light blocking film 226 are formed. After the protective film 215b is formed on the contact hole 240, a contact hole 240 is formed in the array substrate 210 to expose a portion of the drain electrode 223 by selectively removing the passivation layer 215b through the photolithography process (third mask process). do.

The protective layer 215b may be formed of an inorganic insulating layer such as a silicon nitride layer or a silicon oxide layer, or may be formed of an organic insulating layer such as photoacryl or benzocyclobutene (BCB).

Next, as shown in FIGS. 7D and 8D, after forming the third conductive film on the entire surface of the array substrate 210 on which the protective film 215b is formed, it is selectively removed through a photolithography process (fourth mask process). As a result, the pixel electrode 218 is electrically connected to the drain electrode 223 through the contact hole 240.

In this case, the third conductive layer includes a transparent conductive material having excellent transmittance such as indium tin oxide (ITO) or indium zinc oxide (IZO) to form a pixel electrode.

The array substrate according to the second embodiment of the present invention manufactured as described above is bonded to the color filter substrate by a sealant formed on the outside of the image display area, wherein the thin film transistor, the gate line, A black matrix is formed to prevent light leakage from the data line, and a color filter is formed to realize red, green, and blue colors.

At this time, the bonding of the color filter substrate and the array substrate is made through a bonding key formed on the color filter substrate or the array substrate.

The second embodiment of the present invention describes an amorphous silicon thin film transistor using an amorphous silicon thin film as an active pattern as an example, but the present invention is not limited thereto, and the present invention is not limited thereto. The same applies to silicon thin film transistors.

In addition, the liquid crystal display device according to the first and second embodiments of the present invention is a twisted nematic (TN) type liquid crystal display device for driving the nematic liquid crystal molecules in a direction perpendicular to the substrate Although described, the present invention is not limited thereto, and the present invention also applies to an in-plane switching (IPS) type liquid crystal display device in which a liquid crystal molecule is driven in a horizontal direction with respect to a substrate to improve the viewing angle to 170 degrees or more. Applicable

In addition, the present invention can be used not only in liquid crystal display devices but also in other display devices fabricated using thin film transistors, for example, organic light emitting display devices in which organic light emitting diodes (OLEDs) are connected to driving transistors. have.

Many details are set forth in the foregoing description but should be construed as illustrative of preferred embodiments rather than to limit the scope of the invention. Therefore, the invention should not be defined by the described embodiments, but should be defined by the claims and their equivalents.

1 is an exploded perspective view schematically showing a general liquid crystal display device.

2 is a plan view schematically illustrating a portion of an array substrate of a general liquid crystal display;

FIG. 3 is a schematic cross-sectional view of a liquid crystal display device in which the array substrate shown in FIG. 2 and the color filter substrate opposing thereto are bonded.

4 is a plan view schematically illustrating a portion of an array substrate of a liquid crystal display according to a first exemplary embodiment of the present invention.

FIG. 5 is a schematic cross-sectional view of a liquid crystal display according to a first exemplary embodiment of the present invention, in which an array substrate shown in FIG. 4 and a color filter substrate opposing the same are bonded.

6 is a schematic cross-sectional view of a liquid crystal display according to a second exemplary embodiment of the present invention.

7A to 7D are plan views sequentially illustrating a manufacturing process of the array substrate illustrated in FIG. 6.

8A to 8D are cross-sectional views sequentially illustrating a manufacturing process of the array substrate illustrated in FIG. 6.

DESCRIPTION OF REFERENCE NUMERALS

101,201 liquid crystal display 105,205 color filter substrate

106,206: Black Matrix 107,207: Color Filter

108,208: common electrode 110,210: array substrate

115a, 215a: gate insulating film 115b, 215b: protective film

116,216 Gate line 117,217 Data line

118,218 pixel electrode 121,221 gate electrode

122,222 source electrode 123,223 drain electrode

126,226 Shading Film

Claims (12)

Forming a gate electrode and a gate line on the array substrate; Forming a gate insulating film on the array substrate on which the gate electrode and the gate line are formed; Forming an active pattern on the gate insulating layer; Forming a data line defining a pixel region intersecting the source / drain electrode and the gate line electrically connected to the source / drain region of the active pattern, and forming a light shielding layer on the gate line; Forming a passivation layer on the array substrate on which the source / drain electrodes, the data line, and the light blocking layer are formed; Removing a portion of the passivation layer to form a contact hole exposing a portion of the drain electrode; Forming a pixel electrode electrically connected to the drain electrode through the contact hole; And And bonding the array substrate to the color filter substrate. The method of claim 1, wherein the active pattern, the source / drain electrodes, the data lines, and the light blocking film are formed through the same mask process. The method of claim 1, wherein the light blocking film is formed of a conductive film constituting the source / drain electrode and the data line. The method of claim 1, further comprising forming an ohmic contact layer formed of an n + amorphous silicon thin film under the active pattern, and ohmic contacting a source / drain region of the active pattern and the source / drain electrode. Method of manufacturing a liquid crystal display device comprising a. 5. The method of claim 4, further comprising forming an amorphous silicon thin film pattern consisting of the amorphous silicon thin film constituting the active pattern and the n + amorphous silicon thin film and an n + amorphous silicon thin film pattern under the light shielding film. Method of manufacturing a liquid crystal display device. The method of claim 1, wherein the pixel electrode is formed to overlap a portion of a light blocking film under the pixel electrode. The method of claim 1, wherein the pixel electrode is formed to overlap a portion of a gate line below the pixel electrode. A gate electrode and a gate line formed on the array substrate; A gate insulating layer formed on the array substrate on which the gate electrode and the gate line are formed; An active pattern formed on the gate insulating layer; A data line defining a pixel region crossing the source / drain electrode electrically connected to the source / drain region of the active pattern and the gate line; A light blocking film formed on the gate line and formed of a conductive film constituting the source / drain electrode and the data line; A passivation layer formed on the array substrate on which the source / drain electrodes, the data line, and the light blocking layer are formed; A contact hole exposing a portion of the drain electrode by removing a portion of the passivation layer; A pixel electrode electrically connected to the drain electrode through the contact hole; And And a color filter substrate bonded to the array substrate. The semiconductor device of claim 8, further comprising an ohmic contact layer formed of an n + amorphous silicon thin film on the active pattern and ohmic contacting a source / drain region of the active pattern and the source / drain electrode. LCD display device. The liquid crystal display device of claim 9, further comprising an amorphous silicon thin film pattern formed of the active pattern and an n + amorphous silicon thin film and an n + amorphous silicon thin film pattern formed under the light blocking layer. 10. The liquid crystal display device according to claim 8, wherein the pixel electrode overlaps a part of a light shielding film under the pixel electrode. 10. The liquid crystal display device according to claim 8, wherein the pixel electrode overlaps a portion of a gate line below the pixel electrode.

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