KR20100058779A - 발광 다이오드 패키지 및 이의 제조방법 - Google Patents
발광 다이오드 패키지 및 이의 제조방법 Download PDFInfo
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- KR20100058779A KR20100058779A KR1020080117310A KR20080117310A KR20100058779A KR 20100058779 A KR20100058779 A KR 20100058779A KR 1020080117310 A KR1020080117310 A KR 1020080117310A KR 20080117310 A KR20080117310 A KR 20080117310A KR 20100058779 A KR20100058779 A KR 20100058779A
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Abstract
Description
Claims (15)
- 기판;상기 기판 상부에 실장되는 LED 칩;상기 LED 칩의 외표면을 포함한 상기 기판의 상부에 도포되는 몰딩재; 및상기 기판의 하부에 도포되는 봉지재;를 포함하는 발광 다이오드 패키지.
- 제1항에 있어서,상기 기판은, 중앙부에 관통홀이 형성된 되어 상기 관통홀 상부에 상기 LED 칩이 복개되도록 안착된 발광 다이오드 패키지.
- 제2항에 있어서,상기 관통홀은, 상기 기판에 실장되는 상기 LED 칩이 복개 가능한 크기로 형성되며, 상기 관통홀이 형성된 상기 기판의 내측 테두리부에 상기 LED 칩의 하면이 안착되는 발광 다이오드 패키지.
- 제1항에 있어서,상기 기판과 LED 칩은 상기 LED 칩의 하면에 일단이 본딩되고, 상기 LED 칩의 와이어 본딩면에서 인출된 타단이 상기 기판의 하면에 본딩되어 전기적으로 접속된 발광 다이오드 패키지.
- 제1항에 있어서,상기 몰딩재는, 형광체와 실리콘이 혼합된 수지로 구성되어 상기 기판에 실장된 상기 LED 칩이 매립 가능하며, 상기 LED 칩의 상면을 비롯한 측부의 사면이 직접 접촉되게 소정의 두께로 도포되는 발광 다이오드 패키지.
- 제5항에 있어서,상기 형광체는, 청색, 적색 또는 녹색 형광체 중 어느 하나인 발광 다이오드 패키지.
- 제1항에 있어서,상기 기판의 상면 또는 LED 칩의 하면에 반사층이 형성되거나, 상기 기판의 상면과 LED 칩의 하면에 모두 반사층이 형성된 발광 다이오드 패키지.
- 제1항에 있어서,상기 기판은, 광 투과성 재질로 구성된 발광 다이오드 패키지.
- 평판형의 기판에 등간격으로 관통홀을 형성하는 단계;상기 기판의 관통홀이 복개되도록 상기 관통홀 상부에 LED 칩을 실장하는 단계;상기 LED 칩과 상기 기판을 와이어 본딩하는 단계;상기 기판의 상면에 상기 LED 칩의 사면과 상면을 덮도록 몰딩재를 도포하는 단계;상기 기판의 하면에 본딩된 와이어를 포함하도록 봉지재를 도포하는 단계; 및상기 몰딩재와 봉지재의 경화 후 다이싱 라인을 따라 단위 발광 다이오드 패키지로 절단하는 단계;를 포함하는 발광 다이오드 패키지의 제조방법.
- 제9항에 있어서,상기 기판에 관통홀을 형성하는 단계에서,상기 관통홀은, 상기 LED 칩에 의해서 복개될 수 있는 크기로 형성되는 발광 다이오드 패키지의 제조방법.
- 제9항에 있어서,상기 몰딩재와 봉지재는, 스퀴즈, 스크린 프린팅, 실크 스크린 및 스텐실 등의 도포 방법 중 어느 하나의 도포 방법을 이용하여 소정의 두께로 도포되는 발광 다이오드 패키지의 제조방법.
- 제11항에 있어서,상기 몰딩재와 봉지재는, 상기 기판의 상, 하부에 디스펜싱 방식으로 도포되는 발광 다이오드 패키지의 제조방법.
- 제12항에 있어서,상기 몰딩재와 봉지재가 디스펜싱 방식에 의해 도포될 경우에는, 상기 LED 칩이 실장된 상기 기판을 개별적으로 제작한 후 상기 몰딩재와 봉지재를 형성하는 발광 다이오드 패키지의 제조방법.
- 제9항에 있어서,상기 몰딩재는, 형광체와 실리콘이 혼합된 수지로 구성되며, 상기 형광체는 청색, 적색 또는 녹색 형광체 중 어느 하나인 발광 다이오드 패키지의 제조방법.
- 제9항에 있어서,상기 기판의 상면과 하면에 상기 몰딩재와 봉지재가 도포되는 단계 이전에는,상기 기판의 상면 또는 상기 LED 칩의 하면에 반사층을 형성하거나, 상기 기판의 상면과 상기 LED 칩의 하면에 모두 반사층이 형성되는 발광 다이오드 패키지의 제조방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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KR1020080117310A KR101521260B1 (ko) | 2008-11-25 | 2008-11-25 | 발광 다이오드 패키지 및 이의 제조방법 |
US12/360,250 US8445927B2 (en) | 2008-11-25 | 2009-01-27 | Light emitting diode package and manufacturing method thereof |
US12/785,024 US8507299B2 (en) | 2008-11-25 | 2010-05-21 | Light emitting diode package and manufacturing method thereof |
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KR1020080117310A KR101521260B1 (ko) | 2008-11-25 | 2008-11-25 | 발광 다이오드 패키지 및 이의 제조방법 |
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KR20100058779A true KR20100058779A (ko) | 2010-06-04 |
KR101521260B1 KR101521260B1 (ko) | 2015-05-18 |
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Cited By (2)
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US8952404B2 (en) | 2011-01-20 | 2015-02-10 | Samsung Electronics Co., Ltd. | Light-emitting device package and method of manufacturing the light-emitting device package |
KR20170070642A (ko) * | 2015-12-14 | 2017-06-22 | 엘지디스플레이 주식회사 | 광원 모듈 및 이를 이용한 백라이트 유닛과 표시장치 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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KR20120062302A (ko) * | 2010-12-06 | 2012-06-14 | 삼성엘이디 주식회사 | 발광소자 패키지 및 그 제조방법 |
US9583681B2 (en) * | 2011-02-07 | 2017-02-28 | Cree, Inc. | Light emitter device packages, modules and methods |
US8896010B2 (en) | 2012-01-24 | 2014-11-25 | Cooledge Lighting Inc. | Wafer-level flip chip device packages and related methods |
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US20130309792A1 (en) * | 2012-05-21 | 2013-11-21 | Michael A. Tischler | Light-emitting dies incorporating wavelength-conversion materials and related methods |
CN102795005B (zh) | 2012-07-09 | 2015-12-02 | 厦门飞德利照明科技有限公司 | 一种led模组的荧光粉丝网印刷工艺 |
US8765500B2 (en) * | 2012-08-24 | 2014-07-01 | Tsmc Solid State Lighting Ltd. | Method and apparatus for fabricating phosphor-coated LED dies |
US20140208689A1 (en) | 2013-01-25 | 2014-07-31 | Renee Joyal | Hypodermic syringe assist apparatus and method |
EP2948709B1 (en) | 2013-01-25 | 2016-10-05 | Koninklijke Philips N.V. | Lighting assembly and method for manufacturing a lighting assembly |
US10094523B2 (en) * | 2013-04-19 | 2018-10-09 | Cree, Inc. | LED assembly |
JP6608359B2 (ja) * | 2013-07-19 | 2019-11-20 | ルミレッズ ホールディング ベーフェー | 基板キャリアを有さず光学素子を有するpcled |
US9343443B2 (en) | 2014-02-05 | 2016-05-17 | Cooledge Lighting, Inc. | Light-emitting dies incorporating wavelength-conversion materials and related methods |
TWI575676B (zh) * | 2014-11-17 | 2017-03-21 | 矽品精密工業股份有限公司 | 電子封裝結構及其製法 |
EP3534414B1 (en) | 2016-10-25 | 2023-09-27 | Seoul Semiconductor Co., Ltd. | Display apparatus based on light-emitting diode packages |
CN113238312A (zh) | 2016-11-14 | 2021-08-10 | 首尔半导体株式会社 | 显示装置 |
CN110235259A (zh) * | 2017-02-02 | 2019-09-13 | 西铁城电子株式会社 | Led封装体及其制造方法 |
US10260683B2 (en) | 2017-05-10 | 2019-04-16 | Cree, Inc. | Solid-state lamp with LED filaments having different CCT's |
CN108133670B (zh) * | 2017-11-27 | 2020-09-18 | 长春希达电子技术有限公司 | 集成封装led显示模块封装方法及led显示模块 |
US20190267525A1 (en) | 2018-02-26 | 2019-08-29 | Semicon Light Co., Ltd. | Semiconductor Light Emitting Devices And Method Of Manufacturing The Same |
JP7531715B2 (ja) * | 2021-03-03 | 2024-08-09 | 泉州三安半導体科技有限公司 | Ledパッケージデバイス及びその製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02123773A (ja) * | 1988-11-02 | 1990-05-11 | Matsushita Electric Ind Co Ltd | 発光ダイオード |
US6515355B1 (en) * | 1998-09-02 | 2003-02-04 | Micron Technology, Inc. | Passivation layer for packaged integrated circuits |
US6260417B1 (en) * | 1999-10-13 | 2001-07-17 | Denso Corporation | Semiconductor pressure sensor device with multi-layered protective member that reduces void formation |
US6733880B2 (en) * | 2000-01-19 | 2004-05-11 | Hitachi Chemical Co., Ltd. | Adhesive film for semiconductor, lead frame with adhesive film for semiconductor and semiconductor device using the same |
US6650044B1 (en) * | 2000-10-13 | 2003-11-18 | Lumileds Lighting U.S., Llc | Stenciling phosphor layers on light emitting diodes |
US6545350B2 (en) * | 2001-01-31 | 2003-04-08 | United Microelectronics Corp. | Integrated circuit packages and the method for the same |
US6661167B2 (en) * | 2001-03-14 | 2003-12-09 | Gelcore Llc | LED devices |
US6531328B1 (en) * | 2001-10-11 | 2003-03-11 | Solidlite Corporation | Packaging of light-emitting diode |
ES2335878T3 (es) * | 2002-08-30 | 2010-04-06 | Lumination, Llc | Led recubierto con eficacia mejorada. |
TW561636B (en) * | 2002-10-11 | 2003-11-11 | Highlink Technology Corp | Optoelectronic device |
TW567566B (en) * | 2002-10-25 | 2003-12-21 | Siliconware Precision Industries Co Ltd | Window-type ball grid array semiconductor package with lead frame as chip carrier and method for fabricating the same |
US6835960B2 (en) * | 2003-03-03 | 2004-12-28 | Opto Tech Corporation | Light emitting diode package structure |
DE10339762B4 (de) * | 2003-08-27 | 2007-08-02 | Infineon Technologies Ag | Chipstapel von Halbleiterchips und Verfahren zur Herstellung desselben |
JP3852462B2 (ja) * | 2004-09-27 | 2006-11-29 | 日亜化学工業株式会社 | 発光装置及びその形成方法 |
KR100726969B1 (ko) | 2005-11-28 | 2007-06-14 | 한국광기술원 | 서브마운트를 적용하지 않는 고방열기판을 구비한발광다이오드 패키지 |
KR100854328B1 (ko) * | 2006-07-07 | 2008-08-28 | 엘지전자 주식회사 | 발광 소자 패키지 및 그 제조방법 |
US7662672B2 (en) * | 2006-10-13 | 2010-02-16 | Chipmos Technologies (Bermuda) Ltd. | Manufacturing process of leadframe-based BGA packages |
US20080128665A1 (en) * | 2006-12-04 | 2008-06-05 | 3M Innovative Properties Company | Nanoparticle based thin films |
-
2008
- 2008-11-25 KR KR1020080117310A patent/KR101521260B1/ko active Active
-
2009
- 2009-01-27 US US12/360,250 patent/US8445927B2/en active Active
-
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- 2010-05-21 US US12/785,024 patent/US8507299B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8952404B2 (en) | 2011-01-20 | 2015-02-10 | Samsung Electronics Co., Ltd. | Light-emitting device package and method of manufacturing the light-emitting device package |
KR20170070642A (ko) * | 2015-12-14 | 2017-06-22 | 엘지디스플레이 주식회사 | 광원 모듈 및 이를 이용한 백라이트 유닛과 표시장치 |
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US20100227424A1 (en) | 2010-09-09 |
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US20100127290A1 (en) | 2010-05-27 |
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