KR20100032315A - Vapor deposition reactor using plasma and method for forming thin film using the same - Google Patents

Abstract

PURPOSE: A vapor deposition reactor using plasma and a method for manufacturing a thin film using the same are provided to inject a source precursor or reactant precursor to a substrate using an electrode for generating the plasma. CONSTITUTION: A vapor deposition reactor includes a first electrode(301), a second electrode(302), and a power source(303). The first electrode includes a first channel(311) and one first injection hole(312) or more. The first injection hole is connected to the first channel. The second electrode is electrically separated from the first electrode. The power source applies power between the first electrode and the second electrode and generates plasma from a reactive gas between the first electrode and the second electrode.

Description

Vapor Deposition Reactor Using Plasma and Thin Film Formation Method Using The Same {VAPOR DEPOSITION REACTOR USING PLASMA AND METHOD FOR FORMING THIN FILM USING THE SAME}

A vapor deposition reactor using plasma and a thin film formation method using the same are disclosed.

In performing chemical vapor deposition (CVD) or atomic layer deposition (ALD), it is sometimes necessary to apply a precursor and a plasma together. In general, plasma may be generated by applying power between a plurality of electrodes facing each other.

1 is a cross-sectional view illustrating a vapor deposition reactor using a direct plasma method according to the prior art.

Referring to FIG. 1, the vapor deposition reactor may include a chamber 106, two electrodes 101 and 102 and a power source 103 positioned in the chamber 106 and spaced apart from each other. Since power is applied by the power supply 103 between the two electrodes 101 and 102, a plasma may be generated between the two electrodes 101 and 102 and applied to the substrate 100. In addition, a source precursor or a reactant precursor introduced through the inlet 104 of the chamber 106 may be injected into the substrate 100. The raw material precursor or the reaction precursor may be discharged out of the chamber 106 through the outlet 105.

By using the vapor deposition reactor, it is possible to obtain a thin film having a relatively higher density than the thin film obtained by pyrolysis. In addition, a low temperature process by plasma is possible. However, since plasma is directly applied to the substrate 100, damage to the substrate 100 may occur due to the plasma, and by-products decomposed by the plasma may be mixed in the thin film. For example, large amounts of carbon can be generated when using metal-organic sources.

In addition, a low pressure or high vacuum is required to generate a capacitive plasma, and a plasma generated by a high voltage generates fine arcs at a part of an electrode, thereby generating particles or deteriorating film characteristics. Can be. In addition, when the pulse power is applied from the power source 103 to apply the evaporator to the ALD, it is difficult to stabilize the plasma within a short time, particles may be generated while the on (off) of the plasma is repeated, There is a disadvantage that the reflective power can be increased.

Figure 2 is a cross-sectional view showing a vapor deposition reactor of a remote plasma (remote plasma) method according to another prior art.

Referring to FIG. 2, the vapor deposition reactor may include a chamber 206, a first coil 201 and a second coil 202 spaced apart from each other, and a power source 203. In this case, in the case of an inductively coupled plasma method, the first coil 201 and the second coil 202 may be formed as one coil coil. When power is applied by the power source 203 between the same first coil 201 and the second coil 202, plasma is generated at a position spaced apart from the substrate 200, and the generated plasma is remotely provided to the substrate 200. Can be applied to. In addition, the raw material precursor or the reaction precursor may be injected into the substrate 200 through the injection hole 204 of the chamber 206.

The vapor deposition reactor may reduce damage to the substrate 200 by the plasma because the plasma is generated at a point away from the substrate 200. It is also possible for low temperature processes by remote plasma. However, since plasma is unevenly applied to the substrate 200, the thin film is not uniformly formed from the center of the substrate 200 to the edge portion. In addition, in order to uniformly inject the raw material precursor or the reaction precursor onto the substrate 200, the volume of the chamber 206 must be large, and as a result, the consumption of the raw material precursor or the reaction precursor increases.

As another vapor deposition reactor according to the prior art, there is a showerhead type reactor incorporating the plasma generating apparatus described in US Patent No. 6,435,428. The reactor may form a thin film by radical-assisted CVD or ALD by installing an electrode for plasma generation inside the shower head and injecting the reactor gas excited by the source gas and the plasma into the chamber, respectively. .

However, the reactor of U.S. Patent No. 6,435,428 must construct a showerhead using an insulator such as ceramic to apply plasma, and insulate the inside of the showerhead to electrically separate the raw gas from the reactant gas. An electrode must be installed to form the In addition, since the shower head is assembled using ceramic parts that are not welded for insulation, there is a problem of low reliability and durability because an O-ring is used so that gas does not leak between the parts. .

In addition, the reactor of US Patent No. 6,435, 428 can generate plasma only in the reactor body since the raw material gas is decomposed and deposited by the plasma. Therefore, a gas injection tube made of an insulator such as ceramic or quartz should be inserted into the upper plate on the top of the electrode so that the raw material gas is not affected by the plasma when passing through the channel of the reactor. In this case, if the material of the shower head and the thermal expansion coefficient of the gas injection tube is different, or if there is a gap between the tubes, the raw material gas may be mixed into the plasma generation channel and deposited inside the shower head. Therefore, when forming a metal thin film or the like, deposition may be performed around the tube, thereby causing disconnection between electrodes, and as a result, plasma may not be generated.

According to an aspect of the present invention, there is provided a vapor deposition reactor capable of injecting a material such as a raw material precursor or a reaction precursor into a substrate through an electrode for plasma generation at the same time to generate a plasma between the electrodes and a method of forming a thin film using the same Can provide.

According to an aspect of the present invention, a vapor deposition reactor includes: a first electrode including a first channel and at least one first injection hole connected to the first channel; A second electrode electrically separated from the first electrode; And a power source for generating a plasma from a reaction gas between the first electrode and the second electrode by applying power between the first electrode and the second electrode.

The first channel may include a plurality of first channels separated from each other.

The second electrode may include a second channel; And one or more second injection holes connected to the second channel. In addition, the second channel may include a plurality of second channels separated from each other.

At least one of the first electrode and the second electrode may have a protrusion protruding between the first electrode and the second electrode.

The first electrode or the second electrode, the platform extending in one direction; And a protrusion formed spirally on the surface of the platform along the one direction.

According to another aspect of the present invention, there is provided a method of forming a thin film, comprising: disposing a first electrode and a second electrode including a first channel and at least one first injection hole connected to the first channel; Applying a power between the first electrode and the second electrode to generate a plasma from a reaction gas between the first electrode and the second electrode; Moving the substrate adjacent to the first electrode and the second electrode; And injecting material into the substrate through the one or more first injection holes.

When the second electrode includes a second channel and at least one second injection hole connected to the second channel, the method of forming a thin film may further include injecting a material into the substrate through the at least one second injection hole. .

Using the vapor deposition reactor according to one aspect of the present invention, it is possible to reduce or prevent the damage caused by the direct exposure of the substrate to the plasma. In addition, in the process of forming a thin film by atomic layer deposition (ALD), raw material precursors may be decomposed by plasma to prevent excessive reaction by-products from entering the thin film. In addition, the raw material precursor, the reaction precursor and the reaction gas for plasma generation may be separated and injected into the vapor deposition reactor. Furthermore, since the plasma generating space and the space of the reactor are separate, the space of the reactor can be minimized, thereby improving the efficiency of the raw material precursor (that is, the rate at which the injected raw material precursor is converted into a thin film).

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a cross-sectional view illustrating a vapor deposition reactor according to one embodiment.

Referring to FIG. 3, the vapor deposition reactor may include a first electrode 301, a second electrode 302, and a power source 303. The first electrode 301 and the second electrode 302 may be electrically separated from each other. For example, the first electrode 301 and the second electrode 302 may be spaced apart from each other. Alternatively, if the first electrode 301 and the second electrode 302 need to contact each other in a predetermined region, a ceramic such as Al ₂ O ₃ may be interposed therebetween so that the first electrode 301 and the second electrode ( 302 may be insulated from each other. In one embodiment, the first electrode 301 may be located in the second electrode 302, and the second electrode 302 may be located in a shape surrounding the first electrode 301.

The first electrode 301 and the second electrode 302 may be made of a suitable conductive material such as a metal, and in the case of a dielectric barrier discharge plasma, a dielectric may be inserted or coated between these two electrodes. For example, the first electrode 301 and the second electrode 302 may be conductive with stainless steel, Inconel, nickel (Ni), aluminum (Al), high melting point metal, and dopant. It may be made of silicon (Si), anodized aluminum (Al), a metal coated with a dielectric (eg, SiO ₂ , Al ₂ O _3, or SiN), or conductive silicon.

When the first electrode 301 and the second electrode 302 are mixed in the thin film during the formation of the thin film, the first electrode 301 and the second material may be made of the same material as the material of the thin film. The electrode 302 can also be configured. For example, when forming a NiO thin film, the first electrode 301 and the second electrode 302 may be formed of Ni or a Ni alloy. In addition, when forming a SiO ₂ or SiN thin film, the first electrode 301 and the second electrode 302 may be formed of silicon. In this case, in order to have conductivity, the silicon may be doped with a predetermined amount of boron (B) or phosphorus (P).

The first electrode 310 may include a channel 311 and one or more injection holes 312 connected to the channel 311. The channel 311 is formed in the first electrode 310 and is a portion for transporting the material injected from the outside. One or more injection holes 312 may be connected to the channel 311 and formed on the surface of the first electrode 310. The injection hole 312 is a portion for injecting the material into the lower substrate 300 by discharging the material carried through the channel 311 from the first electrode 310.

The material injected into the substrate 300 through the injection hole 312 is a source precursor or a reactant precursor for Chemical Vapor Deposition (CVD) or Atomic Layer Deposition (ALD). ) Alternatively, the material injected into the substrate 300 through the injection hole 312 may be a purge gas made of an inert material or a reaction gas for plasma generation.

The vapor deposition reactor and the substrate 300 may be configured to inject a material onto the substrate 300 while moving relative to each other. For example, in FIG. 3, the substrate 300 may pass through lower portions of the first electrode 301 and the second electrode 302 from left to right. The material may be injected into the substrate 300 by one or more injection holes 312 while the substrate 300 completely passes through the first electrode 301. The movement of the substrate 300 relative to the first electrode 301 and the second electrode 302 may be a linear movement or a rotational movement.

In another embodiment, instead of moving the substrate 300, a material may be injected into the substrate 300 while moving the first electrode 301 and the second electrode 302 relative to the substrate 300.

In the vapor deposition reactor, a material is injected into the substrate 300 by the injection hole 312 of the first electrode 301, and plasma is generated between the first electrode 301 and the second electrode 302. It may be applied to the substrate 300. To this end, power may be applied between the first electrode 301 and the second electrode 302 by the power source 303. The power source 303 may apply power in the form of DC, pulse, or RF to generate plasma.

For example, when the power source 303 applies pulse power, the frequency of the pulse power may be about 10 Hz to about 1 KHz, or about 100 KHz to about 60 MHz. In addition, the magnitude of the pulse power may be about 100 W to about 500 W. In addition, the generation time of the plasma may be controlled by adjusting the on-off ratio of the pulse power applied by the power source 303.

The reaction gas for generating plasma may be previously injected between the first electrode 301 and the second electrode 302. When power is applied between the first electrode 301 and the second electrode 302 by the power source 303, plasma may be generated from the reaction gas. For example, as shown in FIG. 3, a plasma may be generated between the side of the first electrode 301 and the inner side of the second electrode 302. In this case, the plasma is generated in a direction parallel to the moving direction of the substrate 300, so that damage to the substrate 300 by the plasma can be reduced or eliminated. In addition, the side surface of the first electrode 301 may be formed to protrude more than the lower injection hole 312, thereby preventing the plasma from being diffused into the raw material precursor injected by the injection hole 312.

In the embodiment shown in FIG. 3, the surfaces of the first electrode 301 and the second electrode 302 are shown in the form of a flat plate for generating a capacitive type plasma. However, in order to generate a capacitive plasma, a low pressure of about 1 Torr or less is required, and it is difficult to generate plasma at atmospheric pressure. In order to generate a plasma at a relatively high atmospheric pressure or pressure (eg, greater than about 100 Torr), a dielectric barrier discharge (DBD) or pulse corona discharge must be generated, in which case the first electrode The 301 and the second electrode 302 may include one or more protrusions (not shown) for generating a dielectric barrier discharge plasma or a pulse corona discharge plasma on surfaces facing each other.

In one embodiment, the second electrode 302 may also include one or more channels and one or more inlets connected to each channel. For example, the second electrode 302 is connected to the first channel 321, at least one first inlet 322 connected to the first channel 321, the second channel 323, and the second channel 323. One or more second injection holes 324 may be included. The first channel 321 and the second channel 233 may be separated from each other.

The material injected into the first channel 321 from the outside may be transported through the first channel 321 and discharged from the second electrode 302 through the first injection hole 322. Likewise, the material carried through the second channel 323 may be discharged from the second electrode 302 through the second injection hole 324. Accordingly, the material may be injected into the lower substrate 300 by using the first injection hole 322 and the second injection hole 324 of the second electrode 302.

The material injected through the first and second injection holes 322 and 324 may be the same as or different from the material injected through the injection hole 312 of the first electrode 301. In addition, the materials injected through the first and second injection holes 322 and 324 may be the same as or different from each other. In one embodiment, it is also possible to inject the material with a time difference between the first injection hole 322 and the second injection hole 324.

For example, when the atomic layer thin film is to be formed on the substrate 300 by ALD, the reaction precursor is injected into the substrate 300 through the first and second injection holes 322 and 324 of the second electrode 302. The precursor precursor may be injected into the substrate 300 through the injection hole 312 of the first electrode 301. Since a plasma may be generated between the first electrode 301 and the second electrode 302, the material injected from the injection holes 322 and 324 of the second electrode 302 may enter the plasma before reaching the substrate 300. By means of excitation and / or degradation. Therefore, the thin film having improved uniformity may be formed by reacting the reaction precursor excited and / or decomposed by the plasma with the raw material precursor.

In one embodiment, purge gas may be injected onto the substrate 300 through the injection holes 322 and 324. For example, the purge gas may be made of an inert material such as nitrogen (N ₂ ), argon (Ar), helium (He), or neon (Ne). Alternatively, the reaction gas for plasma generation may be injected through the injection holes 322 and 324. In this case, power may be applied to the reaction gas injected through the injection holes 322 and 324 to generate a plasma between the first electrode 301 and the second electrode 302.

3, the channels 321 and 323 of the second electrode 302 extend in a direction perpendicular to the channel 311 of the first electrode 301, so that the lengths of the channels 321 and 323 are shown in the drawing. Although a cross section of the direction is shown, this is exemplary and the extension direction of the channels 321 and 323 may be different from that shown, and may be the same or inclined direction as the extension direction of the channel 311, for example. In addition, although the injection holes 322 and 324 are positioned above the second electrode 301 in the embodiment shown in FIG. 3, the injection holes 322 and 324 may be positioned above the second electrode 301.

Using the vapor deposition reactor according to the above-described embodiment, the plasma is generated between the first electrode 301 and the second electrode 302 and at the same time the substrate 300 through the injection hole 312 of the first electrode 301. ) May be injected. Further, the material may be injected into the substrate 300 through the injection holes 322 and 324 of the second electrode 302. Therefore, a thin film having improved uniformity may be formed by decomposing and / or exciting the material by plasma and applying the same to the substrate 300.

4 is a sectional view showing a vapor deposition reactor according to another embodiment.

Referring to FIG. 4, the injection hole 422 of the second electrode 402 may be located at the side of the second electrode 402 in the vapor deposition reactor. That is, the injection hole 422 of the second electrode 402 may be located between the first electrode 401 and the second electrode 402 adjacent to the region where the plasma is generated. The configuration and function of the vapor deposition reactor shown in FIG. 4 may be easily understood by those skilled in the art from the vapor deposition reactor according to the above-described embodiment with reference to FIG.

5A is a cross-sectional view illustrating a vapor deposition reactor according to another embodiment, and FIG. 5B is a perspective view of the vapor deposition reactor shown in FIG. 5A.

Referring to FIGS. 5A and 5B, the vapor deposition reactor may include a first electrode 501, a second electrode 502, a power source 503, and exhaust parts 504 and 505. The first electrode 501 may include a first channel 511, at least one first injection hole 512 connected to the first channel 511, at least one first channel connected to the second channel 513, and a second channel 513. It may include two inlet 514.

The materials carried through the first and second channels 511, 513 may be the same or different from each other, so that the materials injected through the first and second inlets 512, 514 are the same or mutually different. Can be different. For example, when the vapor deposition reactor is used for ALD, the reaction precursor may be injected into the substrate 500 through the first injection hole 512, and the raw material precursor may be injected into the substrate 500 through the second injection hole 514. have.

When power is applied between the first electrode 501 and the second electrode 502 by the power source 503, plasma may be generated between the first electrode 501 and the second electrode 502. In an embodiment, plasma may be generated in a region adjacent to the first injection hole 512 of the first electrode 501 to decompose and / or excite the reaction precursor injected through the first injection hole 512.

The exhaust parts 504 and 505 are parts for discharging impurities or residual precursors, etc. adsorbed on the substrate 500 to the outside. For example, the exhaust unit 504 may remove impurities adsorbed on the surface of the substrate 500 that has moved from the left side by pumping. In addition, the exhaust unit 505 may remove the remaining adsorption layer of the precursors adsorbed on the surface of the substrate 500 while the substrate 500 passes through the first electrode 501 and the second electrode 502. For this purpose, the pressure of the space in the exhaust parts 504 and 505 may be configured to be lower than the pressure in the region adjacent to the first electrode 501 and the second electrode 502. Meanwhile, the surfaces of the exhaust parts 504 and 505 may be curved to have a high conductance.

In the embodiment shown in FIG. 5A, only the first electrode 501 includes the channels 511 and 513 and the inlets 512 and 514, which are illustrative of the first electrode 501 and the second electrode 502. Either one may include one or more channels and an injection hole connected thereto, or both the first electrode 501 and the second electrode 502 may be configured to include one or more channels and injection holes connected thereto.

In addition, the exhaust units 504 and 505 may be provided in the vapor deposition reactor according to the other embodiments of the present invention as well as the vapor deposition reactor according to the embodiment illustrated in FIG. 5A.

6A is a perspective view of a vapor deposition reactor according to another embodiment, and FIG. 6B is a cross-sectional view of the vapor deposition reactor of FIG. 6A.

6A and 6B, the vapor deposition reactor may include a first electrode 601, a second electrode 602, and a power source (not shown). The first electrode 601 may include a platform 611 extending in one direction and one or more protrusions 612 formed in a spiral shape on an outer circumference of the platform 611 along the length direction of the platform 611. . For example, the platform 611 may be cylindrical in shape with a spiral protrusion 612.

The platform 611 and the protrusion 612 of the first electrode 601 and the second electrode 602 may be made of a suitable conductive material such as metal. The material of the first electrode 601 and the second electrode 602 may be the same as the material of the first electrode 301 and the second electrode 302 of the above-described embodiment with reference to FIG. Omit.

The number of protrusions 612 in the embodiment shown in FIGS. 6A and 6B is four, but this is exemplary and may include more or fewer protrusions 612 in other embodiments. Also, in FIG. 6B, the protrusions 612 are disposed at certain angles on the outer circumference of the platform 611, which is exemplary, and in other embodiments, the spacing between the protrusions 612 may not be constant.

The second electrode 602 extends along the length direction of the first electrode 601 and may be positioned to surround the first electrode 601. For example, the second electrode 602 may have an inner shape, and the first electrode 601 may be located at a hole of the second electrode 602.

The surface of the second electrode 602 opposite to the first electrode 601 may have a shape that at least partially corresponds to the surface shape of the first electrode 601. For example, when the cylindrical first electrode 601 having the protrusion is used, the cross section of the second electrode 602 in a direction perpendicular to the longitudinal direction of the first electrode 601 is at least partly a cross section of the cylindrical shape. And may have a concentric shape. Therefore, the plasma may be uniformly generated between the first electrode 601 and the second electrode 602. Alternatively, in another embodiment, the first electrode 601 and the second electrode 602 may have different different cross-sectional shapes.

One or more channels 621 may be formed in the second electrode 602. Material injected into the channel 621 from the outside may be transported through the channel 621 and discharged from the second electrode 602 through the one or more injection holes 622. One or more injection holes 622 may be positioned at predetermined intervals along the length direction of the second electrode 602. The material injected through the injection hole 622 may be a reaction precursor or a raw material precursor for ALD. In addition, the material injected through the injection hole 622 may be a purge gas made of an inert material, or may be a reaction gas for plasma generation.

The length L of the first electrode 601 and the second electrode 602, the distance Z of the second electrode 602 and the substrate 600, the width W of the opening of the second electrode 602, and The response characteristics may be determined according to various variables such as the height H at which the first electrode 601 is positioned and the moving speed of the substrate 600. Therefore, these variables may be appropriately determined based on the size and type of the substrate 600, the type of material used to form the thin film, and the characteristics of the thin film.

For example, the cross-sectional diameter D of the first electrode 601 may be about 50 mm to about 100 mm. In addition, the width W of the opening of the second electrode 602 may be about 60 mm to about 120 mm. In addition, the distance Z between the second electrode 602 and the substrate 600 may be about 0.1 mm to about 5 mm, for example, about 1 mm.

The length L of the first electrode 601 and the second electrode 602 may be greater than the width of the substrate 600 such that the thin film formed on the substrate 600 has sufficient uniformity. For example, when a thin film is to be formed on the substrate 600 having a width of 300 mm, the length L of the first electrode 601 and the second electrode 602 may be about 350 mm or less.

Meanwhile, a space under the first electrode 601 corresponds to a reaction space for forming a thin film on the substrate 600. Therefore, the height H of the first electrode 601 may be appropriately determined according to the size of the desired reaction space. When the vapor deposition reactor is used for chemical vapor deposition (CVD), the height H of the first electrode 601 may be about 10 mm to about 100 mm. In addition, when the vapor deposition reactor is used for ALD, the height H of the first electrode 601 may be about 10 mm to about 50 mm.

In addition, the size of the reaction space and the amount of material injected can be adjusted such that the pressure throughout the equipment has a size of about 1 Torr to atmospheric pressure. In this case, the partial pressure of oxygen may be 10 ⁻⁶ Torr or less. In addition, the temperature of the substrate 600 may be about 200 ° C to about 400 ° C, and the moving speed of the substrate 600 may be about 10 cm / minute to about 100 cm / minute.

The reaction conditions described above are exemplary, and the above-described related variables and other variables related to thin film formation may be appropriately determined based on the type of material used and the characteristics of the thin film to be formed.

When power is applied between the first electrode 601 and the second electrode 602, the dielectric barrier discharge plasma or the dielectric layer discharges in the region where the one or more protrusions 612 of the first electrode 601 overlap the second electrode 602. Pulsed corona discharge plasma may be generated. On the other hand, since the protrusion 612 is formed in a spiral shape, the region where the plasma is generated is also located in the spiral shape.

By configuring the first electrode 601 by using the platform 611 and the protrusion 612 spirally formed on the platform 611, the plasma generated per unit length of the first electrode 601 may be increased. In addition, the distribution of the plasma generation region depends on the number of protrusions 612, the number of spirals of the protrusions 612 per unit length of the platform 611 (that is, the density of the protrusions 612), and the second electrode 602. Since the placement angle of the protrusion 612 is affected, the uniformity of the plasma can be adjusted by adjusting the number and distribution of the protrusions 612.

By using the vapor deposition reactor, a plasma is generated between the first electrode 601 and the second electrode 602 and at the same time, the precursor precursor is formed on the substrate 600 through the injection hole 622 of the second electrode 602. Or a reaction precursor can be injected. Therefore, a thin film having improved uniformity may be formed using a material excited and / or decomposed by plasma.

7A is a perspective view of a vapor deposition reactor according to another embodiment, and FIG. 7B is a cross-sectional view of the vapor deposition reactor shown in FIG. 7A.

7A and 7B, a lower portion of the first electrode 701 may be cut. That is, at the platform 711 constituting the first electrode 701, at least one protrusion 712 is formed at an upper portion adjacent to the injection hole 722 of the second electrode 702, and the lower portion of the platform 711 is cut off. It is possible to increase the size of the reaction space. As a result, the volume of the entire vapor deposition reactor can be minimized by using the first electrode 701 configured as described above. Other configurations and functions of the vapor deposition reactor may be easily understood by those skilled in the art from the embodiments described above with reference to FIGS. 6A and 6B, and thus detailed descriptions thereof will be omitted.

8 is a sectional view showing a vapor deposition reactor according to another embodiment.

Referring to FIG. 8, a showerhead type injector may be formed under the platform 811 constituting the first electrode 801. That is, the channel 813 and one or more injection holes 814 connected to the channel 813 may be formed in the cut portion below the platform 811. The channel 813 and the inlet 814 may be formed by processing the platform 811, or may be separately processed and attached to the platform 811. Using the vapor deposition reactor, a material may be injected into the lower substrate 800 through the injection hole 814.

That is, the channel 813 and the injection hole 814 are formed not only in the second electrode 802 but also in the first electrode 801 to inject a material into the lower substrate. For example, when the vapor deposition reactor is used for ALD, the reaction precursor can be injected into the substrate through the injection hole 822 of the second electrode 802, and the reaction precursor is injected simultaneously while generating plasma, and then purged with a time difference. Only gas for injection may be injected. When the plasma is generated, the raw material precursor may be injected into the substrate through the injection hole 814 of the first electrode 801. Therefore, by injecting the reaction precursor excited and / or decomposed by the plasma with the raw material precursor to the substrate, it is possible to obtain a thin film of improved quality. In addition, the channel 813 and the injection hole 814 formed in the first electrode 801 have an advantage of relatively easy to perform a cleaning (cleaning) process.

Other configurations and functions of the vapor deposition reactor shown in FIG. 8 may be easily understood by those skilled in the art from the above-described embodiment with reference to FIGS. 6A and 6B, and thus detailed descriptions thereof will be omitted.

9A is a perspective view of a vapor deposition reactor according to another embodiment, and FIG. 9B is a cross-sectional view of the vapor deposition reactor of FIG. 9A.

9A and 9B, the first electrode 901 may include a channel 913 formed in the platform 911 and one or more injection holes 914 connected to the channel 913. Channel 913 may extend in the longitudinal direction of platform 911. In addition, one or more injection holes 914 may be located at predetermined intervals along the longitudinal direction of the platform 911. The number of inlets 914 in the cross section of the platform 911 shown in FIG. 9B is two, but this is exemplary and the number of inlets 914 may be one or three or more.

In the vapor deposition reactor, not only the second electrode 902 but also the first electrode 901 may have a channel 913 and an injection hole 914 to inject a material. For example, the reaction precursor may be injected through the injection hole 922 of the second electrode 902, and the raw material precursor may be injected through the injection hole 914 of the first electrode 901. In this case, the injection hole 914 of the first electrode 901 may be formed under the platform 911 to prevent the raw material precursor injected through the injection hole 914 from being affected by the plasma. However, in another embodiment, the injection hole 914 may be formed on the platform 911 and the reaction precursor may be injected through the injection hole 914.

Other configurations and functions of the vapor deposition reactor illustrated in FIG. 9 may be easily understood by those skilled in the art from the above-described embodiment with reference to FIGS. 6A and 6B, and thus detailed descriptions thereof will be omitted.

10 is a sectional view showing a vapor deposition reactor according to another embodiment.

Referring to FIG. 10, in the vapor deposition reactor, the second electrode 1002 may include protrusions 1025 and 1026 protruding from the inner side toward the first electrode 1001. In addition, the second electrode 1002 may include one or more first injection holes 1022 connected to the first channel 1021, first channels 1021, second channels 1023, and one or more second channels 1022. It may include a second injection hole (1024). In this case, the first injection hole 1021 may be located in the protrusion 1025, and the second injection hole 1024 may be located in the other protrusion 1026.

The vapor deposition reactor uses a second electrode 1002 having protrusions 1025 and 1026 to generate plasma in a state where atmospheric pressure or pressure is relatively high. That is, plasma may be generated in an area where the protrusions 1025 and 1026 of the second electrode 1002 and the protrusion 1012 of the first electrode 1001 are adjacent to each other. In this case, the first injection hole 1022 located in the protrusion 1025 and the second injection hole 1024 located in the protrusion 1026 may be used for injecting the reaction precursor. On the other hand, the injection hole 1014 of the first electrode 1001 can be used for the purpose of injecting the raw material precursor.

Meanwhile, in another embodiment, when using the first electrode 1001 that does not include the injection hole, the raw material precursor is injected through the first injection hole 1022 of the second electrode 1002 and the second injection hole 1024. Can also inject the reaction precursor.

The amount of material injected through the injection hole 1014 of the first electrode 1001 and the first injection hole 1022 and the second injection hole 1024 of the second electrode 1002 may be appropriately considered in consideration of the pressure of each region of the reaction space. Can be determined. For example, the raw material injected through the injection hole 1014 by making the pressure in the region between the upper portion of the first electrode 1001 and the second electrode 1002 greater than the pressure in the region under the first electrode 1001. It is possible to prevent the precursor from being incorporated into the plasma generating region.

In another embodiment, the first and second injection holes 1022, 1024 of the second electrode 1002 are located on the protrusions 1025, 1026, instead of the protrusions 1025, 1026, the second electrode 1002. It may be formed in the remaining area of the. Further, in another embodiment, the second electrode 1002 may include an additional injection hole (eg, the injection hole of FIG. 9B) positioned between the protrusions 1025 and 1026 together with the first injection hole 1022 and the second injection hole 1024. 922).

11 is a sectional view showing a vapor deposition reactor according to another embodiment.

Referring to FIG. 11, in the vapor deposition reactor, the first electrode 1101 may include a first channel 1113 and a second channel 1115. In addition, the first electrode 1101 may include one or more first injection holes 1114 connected to the first channel 1113 and one or more second injection holes 1116 connected to the second channel 1115. The same or different materials may be injected through the first injection hole 1114 and the second injection hole 1116. In addition, the second electrode 1102 may include a channel 1121 and an injection hole 1122 connected to the channel 1121.

Hereinafter, a method of forming a radical-treated thin film using the vapor deposition reactor will be described.

For example, SiH ₄ may be injected through the first injection hole 1114 of the first electrode 1101, and Ar or H ₂ gas may be injected through the injection hole 1122 of the second electrode 1102. Meanwhile, plasma may be generated between the upper portion of the first electrode 1101 and the second electrode 1102. When the substrate moved from the left side is positioned below the first injection hole 1114, Si _x or SiH _x may be adsorbed onto the substrate while SiH ₄ is dissociated by the Ar plasma or the H ₂ plasma.

Meanwhile, N ₂ O, H ₂ O, or O ₂ may be injected through the second injection hole 1116 of the first electrode 1101. In this case, radicals excited by the Ar plasma or the H ₂ plasma may excite N ₂ O, H ₂ O or O ₂ to generate O * radicals. When the substrate is moved to the right and positioned below the second injection hole 1116, the material on the substrate may be oxidized or reacted with O * radicals to form a SiO ₂ thin film on the substrate.

Since in the case of SiH _x adsorption or decomposition the substrate is moved while O * reaction is oxidized by radicals and then takes place at the substrate surface, it is not the undesired particles incorporated, the atomic mobility of the fast SiH _x compared to SiO ₂ By using the adsorption phenomenon, a thin film having excellent uniformity can be obtained. Thus, there can be used such as filling gaps (gap-fill) for STI (Shallow Trench Isolation) by SiO _2.

Although the above-described thin film forming method has been exemplarily described with reference to the vapor deposition reactor illustrated in FIG. 11, it may be performed using a vapor deposition reactor according to other embodiments of the present invention. For example, an injection hole formed in the second electrode 1102 instead of the first injection hole 1114 and the second injection hole 1116 of the first electrode 1101 (eg, the first injection hole 1022 and the second injection hole of FIG. 10). (1024), a thin film forming method similar to that described above may be performed.

In addition, the thin film forming method according to the embodiments is not limited to the above-described one, other different thin film forming method may be performed using the vapor deposition reactor according to the embodiments.

12 is a sectional view showing a vapor deposition reactor according to another embodiment.

Referring to FIG. 12, in the vapor deposition reactor, the first electrode 1201 may include a channel 1213 positioned at the center of the platform 1211. By flowing the coolant through the channel 1213, the temperature rise of the first electrode 1201 due to the plasma may be reduced or prevented. The second electrode 1202 may also include one or more channels 1225 for flowing coolant. That is, the temperature of the first electrode 1201 and / or the second electrode 1202 may be adjusted by providing one or more channels for flowing coolant to the first electrode 1201 and / or the second electrode 1202. .

Other configurations and functions of the vapor deposition reactor may be easily understood by those skilled in the art from the foregoing embodiments, and thus detailed descriptions thereof will be omitted.

13 is a sectional view showing a vapor deposition reactor according to another embodiment.

Referring to FIG. 13, the second electrode 1302 has an extension 1325 extending to approach the lower substrate. The extension 1325 has a predetermined length H, and the length of the extension 1325 corresponds to the height of the first electrode 1301 to determine the size of the reaction space. In this case, the extension 1325 is opened by a predetermined angle θ with respect to the vertical direction (ie, the direction perpendicular to the lower substrate surface), so that the width of the region where the plasma is applied to the substrate may be increased. For example, the angle θ may be any angle greater than zero.

 Other configurations and functions of the vapor deposition reactor may be easily understood by those skilled in the art from the foregoing embodiments, and thus detailed descriptions thereof will be omitted.

The shape of the vapor deposition reactor according to the embodiments described above is exemplary, and the vapor deposition reactor configured by various combinations and / or substitutions of the vapor deposition reactor according to the above-described embodiments is also included in the scope of the present invention. . Furthermore, the thin film forming method according to the embodiments is not limited to the thin film forming method performed by the vapor deposition reactor according to the specific embodiment, various thin film forming methods may be performed according to the shape of the vapor deposition reactor.

Although the present invention described above has been described with reference to the embodiments illustrated in the drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and variations may be made therefrom. However, such modifications should be considered to be within the technical protection scope of the present invention. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

1 is a cross-sectional view of a vapor deposition reactor according to the prior art.

2 is a cross-sectional view of another vapor deposition reactor according to the prior art.

3 is a cross-sectional view of a vapor deposition reactor according to one embodiment.

4 is a cross-sectional view of a vapor deposition reactor according to another embodiment.

5A is a cross-sectional view of a vapor deposition reactor according to another embodiment.

5B is a perspective view of the vapor deposition reactor of FIG. 5A.

6A is a perspective view of a vapor deposition reactor according to another embodiment.

6B is a cross-sectional view of the vapor deposition reactor of FIG. 6A.

7A is a perspective view of a vapor deposition reactor according to another embodiment.

FIG. 7B is a cross-sectional view of the vapor deposition reactor of FIG. 7A.

8 is a cross-sectional view of a vapor deposition reactor according to another embodiment.

9A is a perspective view of a vapor deposition reactor according to another embodiment.

9B is a cross-sectional view of the vapor deposition reactor of FIG. 9A.

10 is a cross-sectional view of a vapor deposition reactor according to another embodiment.

11 is a cross-sectional view of a vapor deposition reactor according to another embodiment.

12 is a cross-sectional view of a vapor deposition reactor according to another embodiment.

13 is a cross-sectional view of a vapor deposition reactor according to another embodiment.

Claims (15)

A first electrode including a first channel and at least one first inlet connected to the first channel; A second electrode electrically separated from the first electrode; And And applying a power between the first electrode and the second electrode to generate a plasma from a reaction gas between the first electrode and the second electrode. The method of claim 1, The first channel includes a plurality of first channels separated from each other, And the at least one first injection hole comprises a plurality of first injection holes connected to each of the plurality of first channels. The method of claim 1, The second electrode, Second channel; And And one or more second inlets connected to the second channel. The method of claim 3, wherein The second channel includes a plurality of second channels separated from each other, And said at least one second inlet comprises a plurality of second inlets connected to each of said plurality of second channels. The method of claim 1, At least one of the first electrode and the second electrode has a protrusion projecting between the first electrode and the second electrode. The method of claim 1, And the first electrode is arranged to surround the second electrode. The method of claim 6, The second electrode, A platform extending in one direction; And And a protrusion formed spirally on the surface of the platform along the one direction. The method of claim 7, wherein And a cross section of the first electrode and a cross section of the second electrode in a direction perpendicular to the one direction, at least partially having a concentric shape. The method of claim 1, And the second electrode is arranged to surround the first electrode. The method of claim 9, The first electrode, A platform extending in one direction; And And a protrusion formed spirally on the surface of the platform along the one direction. The method of claim 10, And a cross section of the first electrode and a cross section of the second electrode in a direction perpendicular to the one direction, at least partially having a concentric shape. The method of claim 1, At least one of the first electrode and the second electrode includes at least one channel for carrying cooling water. The method of claim 1, And a gas exhaust portion positioned adjacent to the first electrode and the second electrode. Placing a first electrode and a second electrode adjacent to each other, the first electrode including a first channel and at least one first injection hole connected to the first channel; Applying a power between the first electrode and the second electrode to generate a plasma from a reaction gas between the first electrode and the second electrode; Moving the substrate adjacent to the first electrode and the second electrode; And And injecting material into the substrate through the one or more first injection holes. 15. The method of claim 14, The second electrode includes a second channel and at least one second injection hole connected to the second channel. And injecting material into the substrate through the one or more second injection holes.

Images