KR20090058365A - LCD and its manufacturing method - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device and a method for manufacturing the same. The liquid crystal display device according to the present invention includes a substrate, gate wirings and data wirings arranged on the substrate to define a pixel region, and the gate wirings and data wirings. Thin film transistors disposed in the crossing regions, first, second and third color filter layers formed in the pixel regions on the substrate, and color patterns formed in regions corresponding to the gate wirings, data wirings and thin film transistor regions. Include.

Description

Liquid crystal display device and method for manufacturing the same {Liquid Crystal Display Device And Method For Fabricating The Same}

The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device and a method for manufacturing the same, which can simplify the process and reduce the cost.

Recently, with the development of various portable electronic devices such as mobile phones, PDAs, and notebook computers, there is a growing demand for flat panel display devices for light and thin applications. Such flat panel displays are being actively researched, such as LCD (Liquid Crystal Display), PDP (Plasma Display Panel), FED (Field Emission Display), VFD (Vacuum Fluorescent Display), but mass production technology, ease of driving means, Liquid crystal displays (LCDs) are in the spotlight for reasons of implementation.

In general, a liquid crystal display device includes a lower substrate, an upper substrate, and a liquid crystal layer formed therebetween. The lower substrate is a thin film transistor substrate on which a switching element such as a thin film transistor (TFT) and a pixel electrode are formed, and the upper substrate is a color filter substrate on which a color filter layer and a black matrix are formed. In addition, a driving circuit is provided on the side of the lower substrate to apply a signal to the thin film transistor, the pixel electrode, and the common electrode formed on the lower substrate, respectively.

In the liquid crystal display device configured as described above, the liquid crystal layer formed between the upper substrate and the lower substrate displays the information by controlling the amount of light passing through the liquid crystal layer by driving the liquid crystal molecules by the thin film transistor formed on the lower substrate.

On the other hand, in recent years, a color filter on thin film transistor (COT) structure in which a color filter and a black matrix are formed on the lower substrate to prevent the opening ratio from decreasing as the area of the black matrix increases due to the bonding margin between the upper substrate and the lower substrate. Is being proposed.

However, fabrication of a lower substrate of a COT structure liquid crystal display device in which a thin film transistor, an overcoat layer, a pixel electrode, a black matrix, and a color filter layer are formed is performed only through a plurality of mask processes. The mask process is performed to form each pattern. In the photolithography process, a photolithography process is performed by coating a photoresist on a substrate on which a pattern is to be formed, exposing and developing the pattern formed on the mask on the photoresist to form a photoresist pattern, and etching the desired material layer using the mask. It consists of a series of complex processes of removing the photoresist pattern.

Therefore, as the number of mask processes increases, the process time and the process cost increase, and thus there is a problem in that productivity decreases.

In order to solve the above problems, there is provided a liquid crystal display and a method of manufacturing the same to increase the productivity and to secure a process margin by reducing the number of times of the mask process to a minimum.

According to an exemplary embodiment of the present invention, a liquid crystal display device includes a substrate, a gate wiring and a data wiring crossing the substrate to define a pixel region, and the gate wiring and a data wiring intersecting with each other. A thin film transistor disposed in a region, first, second and third color filter layers formed in a pixel region on the substrate, and a color pattern formed in a region corresponding to the gate wiring, data wiring, and thin film transistor region.

The color pattern is formed at the same time as the forming process of any one of the first, second and third color filter layers, and the color filter layer forming process is performed simultaneously with the color pattern forming process and the color pattern forming process through a photo process. It is formed, and formed before the remaining color filter layer forming process, the remaining color filter layer forming process is formed through the inkjet process.

The color filter layer formed by being performed simultaneously with the color pattern and the color pattern forming process is added with a fluoroalkylsiloxane-based material.

The color pattern is formed to a height of 1.2 ~ 2.0㎛.

According to an aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, in which a gate line and a data line are intersected on a substrate to define a pixel area, and an intersection area of the gate line and the data line. The method may include forming a thin film transistor, forming a passivation layer on a substrate on which the gate line, data line, and the thin film transistor are formed, and forming a first color filter layer and a color pattern on the substrate on which the passivation layer is formed by a photo process. And forming a second color filter layer and a third color filter layer on the substrate on which the first color filter layer and the color pattern are formed, respectively, by an inkjet process, and on the substrate on which the second color filter layer and the third color filter layer are formed. Forming an overcoat layer on the substrate, and forming a contact hole on the substrate on which the overcoat layer is formed, Forming a small electrode.

The color pattern is formed in a region corresponding to the gate wiring, the data wiring, and the thin film transistor region.

The color pattern and the first color filter layer are formed through a color resin to which a fluoroalkylsiloxane-based material is added.

The liquid crystal display according to the present invention and the manufacturing method thereof have the effect of shortening the lower substrate manufacturing process step of the COT structure liquid crystal display by using the inkjet process rather than the photo process and the photo process in the color filter layer forming process, respectively. have.

In addition, the liquid crystal display according to the present invention and a method of manufacturing the same by forming a color pattern that serves as a partition wall during the red color filter layer (R) forming process, thereby forming the green color filter layer (G) and blue color filter layer (B). In the inkjet process, each color ink is prevented from invading into neighboring unit pixel areas, and a fluoroalkylsiloxane-based material is added to the red color resin forming the color pattern 111 and the red color filter layer R. As a result, the surfaces of the color pattern 111 and the red color filter layer R may be hydrophobic to prevent spreading of the color ink accompanying the inkjet process, thereby accurately forming the color filter layer in a desired area.

Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings and embodiments.

1A and 1B are plan views illustrating a liquid crystal display device having a COT structure according to an exemplary embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along line AA ′ of FIG. 1.

As shown in FIGS. 1A and 1B, a liquid crystal display having a COT structure includes a first substrate 130, a second substrate 100, and a liquid crystal layer (not shown) formed therebetween.

The first substrate 130 includes a common electrode 131 and a column spacer 135, and the second substrate 100 includes a switching element such as a thin film transistor (TFT) and a thin film on which a pixel electrode is formed. The transistor substrate and the color filter layer are formed.

In this case, although the common electrode 131 is formed on the first substrate 130 of the present invention, the common electrode may be formed on any one of the second substrate 100 and the first substrate 130.

First, a gate electrode 101 is formed on the first substrate 100, a gate insulating film 103 is formed on the gate electrode 101, and a position corresponding to the gate electrode 101 on the gate insulating film 103. The active layer 105 and the ohmic contact layer 106 are sequentially stacked on the source layer, and the source and drain electrodes 107a and 107b spaced at regular intervals are formed on the ohmic contact layer 106, and the source and drain electrodes 107a, A channel region is formed in the separation section between 107b). As a result, the gate electrode 101, the active layer 105, the ohmic contact layer 106, the source and drain electrodes 107a and 107b and the channel region form a thin film transistor. In addition, the gate line 110 is connected to the gate electrode 101 in the first direction, and the data line 108 is connected to the source electrode 107a in the second direction crossing the first direction. The thin film transistor is formed in an area where the gate line 110 and the data line 108 cross each other, and the gate line 110 and the data line 108 cross each other to define a pixel area. A passivation layer 109 is formed on the thin film transistor, and green (G), red (R), and blue (B) color filter layers are formed on the unit pixel region, and an overcoat layer 115 is formed on each color filter layer. A pixel electrode 18 is formed and connected to the drain electrode 107b through a drain contact hole penetrating through the overcoat layer 115, the color filter layer, and the passivation layer 109.

Each of the green (G), red (R), and blue (B) color filter layers is formed to have a height corresponding to each of the boundary regions of the pixel region on the passivation layer 109, that is, the gate wiring 110 and the data wiring 108. The color pattern 111 is formed in a region corresponding to the thin film transistor region. The color pattern is formed of a red (R) color filter layer, but may be any color filter layer.

The color pattern 111 and the red color filter layer R are formed through a photo process using a mask after applying a red color resin, and the remaining green color filter layer G and the blue color filter layer B spray color ink. It is formed through an inkjet process. In this way, the ink filter process is used in the color filter layer forming process than the photo process and the photo process, respectively, it is possible to shorten the lower substrate manufacturing process step of the COT structure liquid crystal display device. In other words, the photolithography process is performed by a photoresist deposition step, a soft baking step, an exposure and development step using a mask, and a hard baking step, and the inkjet process is performed by an ink jet step, a soft baking and a hard baking step, and an inkjet process. Is performed in a simpler step than the photographic process.

In addition, due to the formation of the color pattern 111 and the red color filter layer R, each color ink may invade neighboring unit pixel areas during the inkjet process for forming the green color filter layer G and the blue color filter layer B. It serves as a barrier to prevent the barrier material, and a fluoroalkylsiloxane series material is added to the red color resin forming the color pattern 111 and the red color filter layer R, and thus the color pattern 111 and the red color. Since the surface of the color filter layer R becomes hydrophobic, it is possible to prevent spreading of the color ink accompanying the inkjet process, thereby forming the color filter layer accurately in a desired area.

As described above, a method of manufacturing a COT structure liquid crystal display device according to the present invention, in which a photo process and an ink jet process are used in the color filter layer forming process, will be described with reference to the drawings.

2A to 2E are cross-sectional views taken along line AA ′ of FIG. 1, illustrating a method of manufacturing a liquid crystal display device having a COT structure according to the present invention.

As shown in FIG. 2A, a gate line (110 of FIG. 1) and a gate electrode 101 are formed on the substrate 100. The gate line 110 and the gate electrode 101 are formed by forming a gate conductive material on the insulating substrate 100 and patterning the same by a photolithography process using a first mask.

Subsequently, a gate insulating layer 103 is formed on the entire surface of the substrate 100 on which the gate electrode 101 and the gate line 102 of FIG. 1 are formed.

The channel layer 105 and the ohmic contact layer 106 are formed on the substrate 100 on which the gate insulating layer 103 is formed. The channel layer 105 and the ohmic contact layer 106 form a pure amorphous silicon film and a doped amorphous silicon film in order on the substrate 100 on which the gate insulating layer 103 is formed, and then photoetch using a second mask. It is formed by patterning in the process.

Next, source / drain electrodes 107a and 107b and a data line 108 of FIG. 1 are formed on the channel layer 105. The source / drain electrodes 107a and 107b and the data line 108 in FIG. 1 form a data conductive material on the substrate 100 on which the channel layer 105 and the ohmic contact layer 106 are formed. It is formed by patterning with a photolithography process using a mask.

Thus, due to the formation of the gate line 110 (in FIG. 1) and the data line (108 in FIG. 1), a unit pixel area is defined, and the gate electrode 101, the channel layer 105, and the ohmic contact layer 106 are formed. And a thin film transistor having source / drain electrodes 107a and 107b formed thereon.

Meanwhile, the second mask process for forming the channel layer 105 and the ohmic contact layer 106 and the third mask process for forming the source / drain electrodes 107a and 107b may be integrated using a diffraction exposure mask. .

Next, a passivation layer 109 is formed on the substrate 100 on which the source / drain electrodes 107a and 107b and the data line (108 of FIG. 1) are formed.

As shown in FIG. 2B, the red color filter layer R and the color pattern 111 are formed on the substrate 100 on which the passivation layer 109 is formed through a photo process. In this case, the red color filter layer R is formed in the red unit pixel region, and the color pattern 111 is formed on the thin film transistor region, the gate wiring 110, and the data wiring 108. The red color filter layer R and the color pattern 111 are formed through a photo process using a fourth mask after applying a red color resin to the entire surface of the substrate. Meanwhile, a fluoroalkylsiloxane-based material is added to the red color resin, and the red color filter layer R and the color pattern 111 have hydrophobic surfaces.

In this case, the red color filter layer R may be formed by being connected to each other with the color pattern 111 formed on the neighboring gate line 108 and the data line 110, as in the embodiment of the present invention. The color pattern 111 formed on the line 108 and the data line 110 may be separated from each other.

In addition, the color pattern 111 is formed to a height of about 1.2 ~ 2.0㎛.

As shown in FIG. 2C, the green color filter layer G and the blue color filter layer B are formed through an inkjet process of spraying color ink onto the substrate 100 on which the color pattern 111 and the red color filter layer R are formed. Is formed.

The green color filter layer G is formed by spraying the green color ink into the green unit pixel region through the first spray nozzle 113a, and the blue color filter layer B is formed through the second spray nozzle 113b. The blue color ink is formed by spraying the blue unit pixel region.

Here, when the green color ink and the blue color ink are sprayed on each unit pixel area, the green color ink and the blue color ink are adjacent to each other due to the color pattern 111 and the red color filter layer R having a hydrophobic characteristic. Invasion to the unit pixel area is prevented.

As shown in FIG. 2D, an overcoat layer 115 is formed on the substrate 100 on which the green color filter layer G and the blue color filter layer B are formed.

As shown in FIG. 2E, the pixel electrode 117 in contact with the drain electrode 107b of the thin film transistor is formed on the substrate 100 on which the overcoat layer 115 is formed, thereby completing this process. The pixel electrode 117 patterns the overcoat layer 115, the color filter layer, and the protective layer 109 by using a photolithography process using a fifth mask on the substrate 100 on which the overcoat layer 115 is formed. After forming the drain contact hole exposing the drain contact hole, a transparent conductive film is formed on the entire surface of the substrate 100 where the drain contact hole is formed, and patterned by a photolithography process using a sixth mask.

Meanwhile, in the above embodiment of the present invention, the color pattern is formed during the red color filter layer forming process, but the color pattern may be formed of not only the red color filter layer but also the green color filter layer or the blue color filter layer.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes can be made without departing from the technical spirit of the present invention. It will be evident to those who have knowledge of.

1A and 1B are a plan view and a cross-sectional view of a liquid crystal display according to an exemplary embodiment of the present invention.

2A to 2E are process flowcharts illustrating a method of manufacturing a liquid crystal display device according to the present invention.

Claims (9)

Substrate, Gate wiring and data wiring arranged on the substrate to define a pixel region; A thin film transistor disposed in an area where the gate line and the data line cross each other; First, second, and third color filter layers formed in the pixel region on the substrate; And a color pattern formed in a region corresponding to the gate wiring, the data wiring, and the thin film transistor region. The method of claim 1, wherein the color pattern is And at the same time as the forming process of any one of the first, second and third color filter layers. The liquid crystal display device according to claim 1, wherein the color filter layer forming step and the color filter layer forming step performed simultaneously with the color pattern forming step are formed through a photographic step and are formed before the remaining color filter layer forming step. The liquid crystal display of claim 3, wherein the remaining color filter layer forming process is performed through an inkjet process. The liquid crystal display device according to claim 2, wherein the color filter layer formed by being performed simultaneously with the color pattern and the color pattern forming process is added with a fluoroalkylsiloxane series material. The liquid crystal display device according to claim 1, wherein the color pattern is formed at a height of 1.2 to 2.0 mu m. Forming a pixel region by crossing the gate wiring and the data wiring on the substrate, and forming a thin film transistor in the crossing region of the gate wiring and the data wiring; Forming a protective film on the substrate on which the gate wiring, the data wiring and the thin film transistor are formed; Forming a first color filter layer and a color pattern on the substrate on which the protective film is formed through a photo process; Forming a second color filter layer and a third color filter layer, respectively, on the substrate on which the first color filter layer and the color pattern are formed by an inkjet process; Forming an overcoat layer on the substrate on which the second color filter layer and the third color filter layer are formed; And forming a pixel electrode after forming a contact hole on the substrate on which the overcoat layer is formed. The method of claim 7, wherein the color pattern is And a region corresponding to the gate wiring, the data wiring, and the thin film transistor region. The method of claim 7, wherein the color pattern and the first color filter layer is A method of manufacturing a liquid crystal display device, characterized in that it is formed through a color resin to which a fluoroalkylsiloxane series material is added.

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