KR20090052696A - Dye-Sensitized Solar Cells with Substrate Including a V-N Junction Diode - Google Patents

Abstract

Disclosed is a dye-sensitized solar cell using a tambour structure including a p-n junction diode as a substrate. The dye-sensitized solar cell according to the present invention includes a semiconductor electrode formed on a first conductive substrate, a counter electrode formed on a second conductive substrate, and an electrolyte layer interposed between the semiconductor electrode and the counter electrode. At least one of the first conductive substrate and the second conductive substrate includes a p-n junction diode.

Dye-Sensitized Solar Cells, p-n Junction Diodes, Substrates, Tandems

Description

Dye-sensitized solar cells having substrate including p-n junction diode

The present invention relates to solar cells, and more particularly to dye-sensitized solar cells. The present invention is derived from the research conducted as part of the IT new growth engine core technology development project of the Ministry of Information and Communication and the Ministry of Information and Communication Research and Development. ].

Dye-sensitized solar cells are photoelectrochemical solar cells whose main components are photosensitive dye molecules capable of absorbing visible light and generating electron-hole pairs, and transition metal oxides that transfer the generated electrons. to be. As a representative example of dye-sensitized solar cells known to date, a semiconductor electrode composed of nanoparticle titanium dioxide (TiO ₂ ) on which dye molecules are adsorbed, a counter electrode coated with platinum or carbon, and an electrolyte solution filled between these electrodes There is a dye-sensitized solar cell. This photochemical cell has been attracting attention due to the low manufacturing cost per power compared to the conventional silicon solar cell.

The operation principle of the dye-sensitized solar cell is as follows. The dyes excited by sunlight inject electrons into the conduction band of nanoparticle titanium dioxide. The injected electrons pass through nanoparticle titanium dioxide to reach the conductive substrate and are transferred to an external circuit. The electrons returned after working in the external circuit are injected into the titanium dioxide by the electron transfer role of the oxidation / reduction electrolyte through the counter electrode to reduce dyes lacking electrons, thereby completing the operation of the dye-sensitized solar cell.

The dye-sensitized solar cell according to the prior art generates electrons by absorbing only light in a limited portion of wavelengths of light emitted from sunlight by the dye adsorbed on the titanium dioxide layer of the semiconductor electrode. Therefore, light in another wavelength region not absorbed by the dye, or light in a wavelength region absorbable in the dye, but not used to generate electricity, is not used to generate electrons, resulting in low energy conversion efficiency. There is a limit to efficiently utilizing dye-sensitized solar cells.

An object of the present invention is to solve the problems in the prior art, to provide a dye-sensitized solar cell that can maximize the energy conversion efficiency of the solar cell by generating electricity by absorbing sunlight over the widest wavelength range as possible. It is.

In order to achieve the above object, the dye-sensitized solar cell according to the first aspect of the present invention is a semiconductor electrode formed on the first conductive substrate, the counter electrode formed on the second conductive substrate, between the semiconductor electrode and the counter electrode And an electrolyte layer interposed therebetween. Any one selected from the first conductive substrate and the second conductive substrate includes a p-n junction diode.

Any one selected from the first conductive substrate and the second conductive substrate

The p-n junction diode and a conductive layer formed on the p-n junction diode may be included.

The first conductive substrate may include the pn junction diode including a p-type semiconductor layer and an n-type semiconductor layer, and a first conductive layer formed on the pn junction diode to contact the p-type semiconductor layer. An electrode may be formed to contact the first conductive layer.

The second conductive substrate may include the pn junction diode including a p-type semiconductor layer and an n-type semiconductor layer, and a second conductive layer formed on the pn junction diode to contact the n-type semiconductor layer. An electrode may be formed to contact the second conductive layer.

Any one selected from the first conductive substrate and the second conductive substrate is a transparent substrate, a first conductive layer formed on the transparent substrate, the pn junction diode formed on the first substrate electrode layer, and the pn junction diode formed on the substrate. It may include a second conductive layer.

In addition, in order to achieve the above object, the dye-sensitized solar cell according to the second aspect of the present invention is a semiconductor electrode formed on the first conductive substrate, the counter electrode formed on the second conductive substrate, the semiconductor electrode and the counter electrode and It includes the electrolyte layer interposed between. The first conductive substrate and the second conductive substrate each include a p-n junction diode.

The pn junction diode includes a first pn junction diode in which a p-type CIS (CuInSe ₂ ) compound semiconductor layer, an n-type CdS layer, and an n-type ZnO: Al layer are sequentially stacked, a p-type a-Si layer and an i-type a- The Si layer and the n-type a-Si layer may have any one structure selected from second pn junction diodes sequentially stacked.

The first conductive substrate and the second conductive substrate may each have a different p-n junction diode structure. Alternatively, the first conductive substrate and the second conductive substrate may have the same p-n junction diode structure.

The dye-sensitized solar cell according to the present invention includes a tandem structure including a pn junction diode in at least one of a first conductive substrate on which a semiconductor electrode is formed and a second conductive substrate on which an opposite electrode is formed. . In the dye-sensitized solar cell according to the present invention has a structure that can be used to generate electricity by absorbing a variety of sunlight from the substrate, such as light that is not absorbed in the dye-sensitized solar cell, or light that is not used to generate electricity . Thus, the open circuit voltage can be increased and thus the energy conversion efficiency can be increased.

Next, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Embodiments of the invention may be modified in various forms, the scope of the invention should not be construed as limited to the embodiments described below. Embodiments of the present invention are provided to more fully illustrate the present invention. Where a film is described herein as being "on" another film or substrate, the film may be directly on top of the other film or substrate, with a third other film interposed therebetween. In the accompanying drawings, the thicknesses and sizes of the films and regions are exaggerated for clarity. Accordingly, the invention is not limited by the relative size or spacing shown in the accompanying drawings. Like reference numerals in the accompanying drawings refer to like elements.

1 is a cross-sectional view showing the main configuration of the dye-sensitized solar cell 100 according to the first embodiment of the present invention.

The dye-sensitized solar cell 100 according to the first embodiment of the present invention includes a semiconductor electrode 130 formed on the first conductive substrate 110 and an opposite electrode 170 formed on the second conductive substrate 150. . An electrolyte layer 190 is interposed between the semiconductor electrode 130 and the counter electrode 170.

The first conductive substrate 110 and the second conductive substrate 150 each include tandem structures 120 and 160 including p-n junction diodes.

In the dye-sensitized solar cell 100 illustrated in FIG. 1, the first conductive substrate 110 has a tandem structure 120 including a first transparent substrate 112, a first conductive layer 114, and a pn junction diode. , And the second conductive layer 128 are sequentially stacked. The second conductive substrate 150 includes a first transparent substrate 152, a third conductive layer 154, a tandem structure 160 including a pn junction diode, and a fourth conductive layer 168. It is.

The first transparent substrate 112 and the second transparent substrate 152 may be made of glass or plastic, respectively. In addition, the first conductive layer 114, the second conductive layer 128, the third conductive layer 154, and the fourth conductive layer 168 are fluorine-doped tin oxide (FTO) and indium tin oxide (ITO), respectively. ), Or SnO ₂ . Alternatively, the first transparent substrate 112 and the second transparent substrate 152 may each be made of a conductive transparent substrate such as a conductive polymer. In this case, the first conductive layer 114 and the third conductive layer 154 need not be formed separately.

The p-n junction diode including the p-type semiconductor layer and the n-type semiconductor layer is formed in the tandem structures 120 and 160 including the p-n junction diode.

Preferably, in the tandem structure 120 including the p-n junction diode adjacent to the semiconductor electrode 130, the p-type semiconductor layer is formed to contact the second conductive layer 128. The semiconductor electrode 130 is formed directly on the second conductive layer 128 to be in contact with the second conductive layer 128. That is, in the first conductive substrate 110, the p-type semiconductor layer of the tandem structure 120 including the p-n junction diode is disposed adjacent to the semiconductor electrode 130.

Also, in the tandem structure 160 including the p-n junction diode adjacent to the counter electrode 170, an n-type semiconductor layer is formed to contact the fourth conductive layer 168. The counter electrode 170 is formed directly on the fourth conductive layer 168 to be in contact with the fourth conductive layer 168. That is, in the second conductive substrate 150, the n-type semiconductor layer of the tandem structure 160 including the p-n junction diode is disposed adjacent to the opposite electrode 168.

The tandem structures 120 and 160 including the pn junction diode may have a structure in which a p-type CIS (CuInSe ₂ ) compound semiconductor layer, an n-type CdS layer, and an n-type ZnO: Al layer are sequentially stacked. Alternatively, the tandem structures 120 and 160 including the pn junction diode may have a structure in which an n-type a-Si layer, an i-type a-Si layer, and a p-type a-Si layer are sequentially stacked. Alternatively, the tandem structures 120 and 160 including the pn junction diode may have a pn junction diode structure including an n-type GaAs layer and a p-type GaAs layer.

The first conductive layer 114 and the second conductive layer 128 may be made of the same conductive material or may be made of different conductive materials. For example, the first conductive layer 114 and the second conductive layer 128 are each made of one same material selected from the group consisting of FTO, ITO, Mo, SnO ₂ , and Ge, or different materials. Can be.

The semiconductor electrode 130 may be formed of a metal oxide layer to which dye molecules are adsorbed. For example, the metal oxide layer may be made of titanium dioxide (TiO ₂ ), tin dioxide (SnO ₂ ) or zinc oxide (ZnO), and may have a thickness of about 3 to 12 μm. Preferably, the metal oxide layer consists of titanium dioxide having a size of about 15 to 25 nm. The dye molecules adsorbed on the metal oxide layer may be made of a ruthenium complex.

The counter electrode 170 may be made of platinum (Pt).

The electrolyte layer 190 is filled in the space sealed by the sealant 180 between the semiconductor electrode 130 and the counter electrode 170. The electrolyte layer 190 may be made of an iodine-based redox liquid electrolyte. For example, the electrolyte layer 190 is 0.6 M 1-hexyl-3-dimethyl imidazolium iodide (1-hexyl-3-dimethyl-imidazolium iodide), 0.03 M I ₂ (iodine), 0.5 M t-butylpyridine and 0.1 M guanidium thiocyanate were dissolved in a mixed solvent of acetonitrile and valeonitrile. ^₃ may be made of an electrolytic solution of the ^- / I.

The partition wall 180 may be formed of, for example, a thermoplastic polymer film such as Surlyn, and may have a thickness of about 30 to 50 μm and a width of about 1 to 4 mm.

1 illustrates a structure in which the tandem structures 120 and 160 including the p-n junction diode are included in the first conductive substrate 110 and the second conductive substrate 150, respectively. The tandem structures 120 and 160 including the p-n junction diode may have the same structure or different structures. Alternatively, if necessary, any one of the tandem structures 120 and 160 including the p-n junction diode may be omitted.

2 is a cross-sectional view showing the main components of the dye-sensitized solar cell 200 according to the second embodiment of the present invention. In Fig. 2, the same reference numerals as those in Fig. 1 denote the same members, and thus detailed description thereof will be omitted.

In the dye-sensitized solar cell 200 illustrated in FIG. 2, the tandem structure 220 including the pn junction diode is composed of a pn junction diode made of amorphous silicon (a-Si) and includes the pn junction diode. The tandem structure 260 is composed of a pn junction diode made of a CIS (CuInSe ₂ ) compound semiconductor.

More specifically, the tandem structure 220 including the pn junction diode may include an n-type a-Si layer 222 and an i-type (intrinsic) a-Si layer 224 on the first conductive layer 114. ), And the p-type a-Si layer 226 are sequentially stacked. The second conductive layer 128 and the semiconductor electrode 130 are sequentially formed on the p-type a-Si layer 226. In the example of FIG. 2, the first conductive layer 114 and the second conductive layer 128 may each be made of FTO.

The tandem structure 260 including the pn junction diode includes a p-type CIS (CuInSe ₂ ) compound semiconductor layer 262, an n-type CdS layer 264, and an n-type ZnO: Al on the third conductive layer 154. The layer 266 has a structure in which the layers 266 are sequentially stacked. The fourth conductive layer 168 and the counter electrode 170 are sequentially formed on the n-type ZnO: Al layer 266. In the example of FIG. 2, the third conductive layer 154 may be made of Mo, and the fourth conductive layer 168 may be made of FTO.

According to an exemplary method for manufacturing the dye-sensitized solar cell 200 illustrated in FIG. 2, in order to first form the first conductive substrate 110, the first conductive layer 114 is formed on the first transparent substrate 112. ), an n-type a-Si layer 222, an i-type (intrinsic) a-Si layer 224, and a p-type a-Si layer 226 are sequentially formed to form a tandem structure 220. Thereafter, a transparent second conductive layer 128 such as, for example, FTO, ITO, or the like is coated on the p-type a-Si layer 226. In addition, the semiconductor electrode 130 is formed on the second conductive layer 128. In order to form the semiconductor electrode 130, for example, any one material selected from titanium dioxide (TiO ₂ ), tin dioxide (SnO ₂ ), and zinc oxide (ZnO) may be formed on the second conductive layer 128. A step of forming a metal oxide semiconductor layer consisting of a metal oxide semiconductor layer and adsorbing dye molecules on the surfaces of the metal oxide particles constituting the metal oxide semiconductor layer can be performed.

In order to form the second conductive substrate 150, a third conductive layer 154, a p-type CIS compound semiconductor layer 262, an n-type CdS layer 264, and n are formed on the second transparent substrate 152. The tandem structure 260 in which the type ZnO: Al layer 266 is laminated one by one is formed. Thereafter, a transparent fourth conductive layer 168 such as FTO, ITO, or the like is coated on the n-type ZnO: Al layer 266. The counter electrode 170 is formed on the fourth conductive layer 168. In order to form the counter electrode 170, for example, the following process can be performed. The tandem structure 260 is to form a thermally stable case, the opposite electrode 170 formed of platinum on the fourth conductive layer 168 by using a hot reduction of Pt ^{2 +} solution in a relatively high temperature of about 400 ℃ Can be. When the tandem structure 260 is not stable at a relatively high temperature of about 400 ° C., the counter electrode 170 made of platinum may be formed on the fourth conductive layer 168 using a chemical reduction method.

In the dye-sensitized solar cell 200 illustrated in FIG. 2, when light from the outside is incident inside through the first transparent substrate 112 or the second transparent substrate 152, a tandem structure including the pn junction diode is included. At the np interface of 220, at the np interface of the tandem structure 260 including the pn junction diode, and between the metal oxide particles constituting the metal oxide semiconductor layer coated with the dye molecules of the semiconductor electrode 130. Electrons and holes are generated at the interface, respectively. Holes generated in the tandem structure 220 move to the p-type a-Si layer 226, and electrons move to the n-type a-Si layer 222. Electrons transferred to the n-type a-Si layer 222 may rotate an external circuit (not shown) connected from the first conductive substrate 110 to the second conductive substrate 150 to form the second conductive substrate 150. Is moved to the p-type CIS compound semiconductor layer 262. Electrons generated by light from the outside in the p-type CIS compound semiconductor layer 262 are opposed to each other via an n-type CdS layer 264 and an n-type ZnO: Al layer 266 and a second conductive layer 168. Move to electrode 170. Electrons moved to the counter electrode 170 are transferred to the electrolyte layer 190 in an electron deficient state. In addition, electrons transferred to the metal oxide semiconductor layer of the semiconductor electrode 130 are transferred to the p-type a-Si layer 226 through the second conductive layer 128 and disappear with holes.

Results The dye molecules oxidized by the electron transition from the semiconductor electrode 130, the electrolyte layer 190, an iodine ion redox action of the inside _{^{(3I - → I 3 - +}} 2e -) accept electrons provided by the will be reduced again The oxidized iodine ions I ₃ ^- are reduced again by the electrons reaching the counter electrode 170, thereby completing the operation of the dye-sensitized solar cell 200.

3 is a cross-sectional view showing the main components of the dye-sensitized solar cell 300 according to the third embodiment of the present invention. In Fig. 3, the same reference numerals as those in Figs. 1 and 2 denote the same members, and thus detailed description thereof will be omitted.

In FIG. 3, a p-n junction diode is included only in the first conductive substrate 110, and a p-n junction diode is not included in the second conductive substrate 150.

In FIG. 3, the tandem structure 220 including the p-n junction diode included in the first conductive substrate 110 is composed of a p-n junction diode made of amorphous silicon (a-Si) as illustrated in FIG. 2.

The second conductive substrate 150 has a laminated structure of the second transparent substrate 152 and the third conductive layer 154, and the counter electrode 170 is formed on the third conductive layer 154. For example, the third conductive layer 154 may be made of FTO.

In the dye-sensitized solar cell 300 illustrated in FIG. 3, when light from the outside is incident inside through the first transparent substrate 112 or the second transparent substrate 152, a tandem structure including a pn junction diode ( Electrons and holes are generated at the np interface of 220 and at the interface between the metal oxide particles in the metal oxide semiconductor layer coated with the dye molecules of the semiconductor electrode 130, respectively. The holes generated here move to the p-type a-Si layer 226, and electrons move to the n-type a-Si layer 222. Electrons transferred to the n-type a-Si layer 222 may rotate an external circuit (not shown) connected from the first conductive substrate 110 to the second conductive substrate 150 to form the second transparent substrate 152. It moves to the third conductive layer 154 and the counter electrode 170 formed thereon. Electrons moved to the counter electrode 170 are transferred to the electrolyte layer 190 in an electron deficient state. In addition, electrons transferred to the metal oxide semiconductor layer of the semiconductor electrode 130 are transferred to the p-type a-Si layer 226 through the second conductive layer 128 and disappear with holes.

Results The dye molecules oxidized by the electron transition from the semiconductor electrode 130, the electrolyte layer 190, an iodine ion redox action of the inside _{^{(3I - → I 3 - +}} 2e -) accept electrons provided by the will be reduced again The oxidized iodine ions I ₃ ^- are reduced again by the electrons reaching the counter electrode 170, thereby completing the operation of the dye-sensitized solar cell 300.

4 is a cross-sectional view showing the main components of the dye-sensitized solar cell 400 according to the fourth embodiment of the present invention. In Fig. 4, the same reference numerals as those in Figs. 1 and 2 denote the same members, and thus detailed description thereof will be omitted.

In FIG. 4, a p-n junction diode is included only in the second conductive substrate 150, and a p-n junction diode is not included in the first conductive substrate 110.

In FIG. 4, the tandem structure 260 including the p-n junction diode included in the second conductive substrate 150 is composed of a p-n junction diode made of a CIS compound semiconductor as illustrated in FIG. 2.

The first conductive substrate 110 has a laminated structure of the first transparent substrate 112 and the first conductive layer 114, and a semiconductor electrode 130 is formed on the first conductive layer 114. For example, the first conductive layer 114 may be made of FTO.

In the dye-sensitized solar cell 400 illustrated in FIG. 4, when light from the outside is incident inside through the first transparent substrate 112 or the second transparent substrate 152, a tandem structure including a pn junction diode ( Electrons and holes are generated at the np interface of 260 and at the interface between the metal oxide particles in the metal oxide semiconductor layer coated with the dye molecules of the semiconductor electrode 130, respectively. Electrons generated in the n-type CdS layer 264 and the n-type ZnO: Al layer 266 are moved to the counter electrode 170 via the fourth conductive layer 168. Electrons moved to the counter electrode 170 are transferred to the electrolyte layer 190 in an electron deficient state. In addition, electrons transferred to the metal oxide semiconductor layer of the semiconductor electrode 130 may turn around an external circuit (not shown) connected from the first conductive substrate 110 to the second conductive substrate 150 to form the second transparent substrate. It moves toward the third conductive layer 154 formed on 152. Thereafter, it disappears with holes generated in the p-type CIS compound semiconductor layer 262.

Results The dye molecules oxidized by the electron transition from the semiconductor electrode 130, the electrolyte layer 190, an iodine ion redox action of the inside _{^{(3I - → I 3 - +}} 2e -) accept electrons provided by the will be reduced again The oxidized iodine ions I ₃ ^- are reduced again by the electrons reaching the counter electrode 170, thereby completing the operation of the dye-sensitized solar cell 400.

Production Example

In this example, an example of manufacturing a dye-sensitized solar cell using a substrate including a tandem structure including a p-n junction diode as a substrate on the opposite electrode side similar to the structure illustrated in FIG. 4 will be described.

First, a Mo layer, a p-type CIS compound semiconductor layer, an n-type CdS layer, and an n-type ZnO: Al layer were sequentially formed on a glass substrate by using a metal organic chemical vapor deposition (MOVCD) process. In particular, the light absorbing p-type CIS compound semiconductor layer was formed to a thickness of about 2 μm. Thereafter, a FTO layer having a thickness of about 1.5 μm was formed on the n-type ZnO: Al layer by using a spray coating process. H ₂ PtCl ₆ · xH ₂ O (hydrogen hexachloroplatinate (IV) hydrate: Aldrich, 99.9%) 2-propanol solution was sprayed on the FTO layer, followed by heat treatment at 400 ° C. for 30 minutes to form a counter electrode.

In order to form the semiconductor electrode, a metal oxide semiconductor layer was coated on the conductive glass substrate. The metal oxide semiconductor layer was formed of titanium dioxide particles having a particle size of about 12 to 20 nm. The metal oxide semiconductor layer was formed to a thickness of about 5 to 15 μm. The dye molecule which consists of a ruthenium complex was chemically adsorb | sucked to the surface of the said metal oxide semiconductor layer. An iodine-based redox liquid electrolyte was used as the electrolyte solution. In this example, 0.6 M of 1-hexyl-3-dimethyl imidazolium iodide, 0.03 M of I ₂ , 0.5 M t-butylpyridine, and 0.1 M of guanidium thiocyanate were added to the acetonitrile and valerian. I ₃ which mixed solvent a mixture of acetonitrile ^- / I ^- electrolyte solution was used as an electrolyte.

The dye-sensitized solar cell manufactured as described above had an energy conversion efficiency of about 9.5% with a fill factor of 65%, an open voltage of 1.13V, a short circuit current, and 13 mA / cm ² .

As a control example, a substrate having no tandem structure including a pn junction diode was used as the substrate on the opposite electrode side, i.e., except that a Pt electrode was formed on a glass substrate coated with FTO. In the case of the dye-sensitized solar cell having the structure, the open circuit voltage showed a value of about 0.7 V, and the energy conversion efficiency was about 6%.

1 is a cross-sectional view showing the main configuration of the dye-sensitized solar cell according to the first embodiment of the present invention.

2 is a cross-sectional view showing the main configuration of the dye-sensitized solar cell according to the second embodiment of the present invention.

3 is a cross-sectional view showing the main components of the dye-sensitized solar cell according to the third embodiment of the present invention.

4 is a cross-sectional view showing the main components of the dye-sensitized solar cell according to the fourth embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100, 200, 300, 400: dye-sensitized solar cell, 110: first conductive substrate, 112: first transparent substrate, 114: first conductive layer, 120: tandem structure including pn junction diode, 128: second conductive Layer, 130: semiconductor electrode, 150: second conductive substrate, 152: second transparent substrate, 154: third conductive layer, 160: tandem structure comprising a pn junction diode, 168: fourth conductive layer, 170: counter electrode 180: bulkhead, 190: electrolyte layer, 220: tandem structure, 222: n-type a-Si layer, 224: i-type a-Si layer, 226: p-type a-Si layer, 260: tandem structure, 262: p Type CIS compound semiconductor layer, 264: n type CdS layer. 266: n-type ZnO: Al layer.

Claims (14)

A semiconductor electrode formed on the first conductive substrate, a counter electrode formed on the second conductive substrate, and an electrolyte layer interposed between the semiconductor electrode and the counter electrode, Dye-sensitized solar cell, characterized in that any one selected from the first conductive substrate and the second conductive substrate comprises a p-n junction diode. The method of claim 1, Any one selected from the first conductive substrate and the second conductive substrate The p-n junction diode, Dye-sensitized solar cell comprising a conductive layer formed on the p-n junction diode. The method of claim 2, The pn junction diode is a dye-sensitized solar cell, characterized in that the p-type CIS (CuInSe ₂ ) compound semiconductor layer, an n-type CdS layer, and an n-type ZnO: Al layer is laminated in sequence. The method of claim 2, The p-n junction diode is a dye-sensitized solar cell, characterized in that the p-type a-Si layer, i-type a-Si layer, and n-type a-Si layer in a stacked structure in order. The method of claim 2, The conductive layer is a dye-sensitized solar cell, characterized in that consisting of fluorine-doped tin oxide (FTO) or indium tin oxide (ITO). The method of claim 1, The first conductive substrate is the p-n junction diode including a p-type semiconductor layer and an n-type semiconductor layer, and a first conductive layer formed on the p-n junction diode to contact the p-type semiconductor layer, The semiconductor electrode is formed in contact with the first conductive layer, characterized in that the dye-sensitized solar cell. The method of claim 1, The second conductive substrate is the p-n junction diode including a p-type semiconductor layer and an n-type semiconductor layer, and a second conductive layer formed on the p-n junction diode to contact the n-type semiconductor layer, The counter electrode is formed in contact with the second conductive layer, characterized in that the dye-sensitized solar cell. The method of claim 1, Any one selected from the first conductive substrate and the second conductive substrate With a transparent substrate, A first conductive layer formed on the transparent substrate, The p-n junction diode formed on the first substrate electrode layer; And a second conductive layer formed on the p-n junction diode. The method of claim 8, The first conductive layer and the second conductive layer is a dye-sensitized solar cell, characterized in that each consisting of FTO or ITO. The method of claim 8, The first conductive layer is made of Mo, The second conductive layer is a dye-sensitized solar cell, characterized in that made of FTO or ITO. A semiconductor electrode formed on the first conductive substrate, a counter electrode formed on the second conductive substrate, and an electrolyte layer interposed between the semiconductor electrode and the counter electrode, The first conductive substrate and the second conductive substrate each dye-sensitized solar cell, characterized in that it comprises a p-n junction diode. The method of claim 11, The p-n junction diode a first pn junction diode in which a p-type CIS (CuInSe ₂ ) compound semiconductor layer, an n-type CdS layer, and an n-type ZnO: Al layer are sequentially stacked, a p-type a-Si layer, an i-type a-Si layer, and n A dye-sensitized solar cell, wherein the type a-Si layer has any one structure selected from second pn junction diodes sequentially stacked. The method of claim 12, The dye-sensitized solar cell of claim 1, wherein the first conductive substrate and the second conductive substrate have different p-n junction diode structures. The method of claim 12, The dye-sensitized solar cell of claim 1, wherein the first conductive substrate and the second conductive substrate have the same p-n junction diode structure.

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