KR20090000953A - Vaporizer - Google Patents

Abstract

The present invention relates to a vaporizer of a vapor deposition apparatus capable of providing two or more orifices to increase vaporization efficiency and supplying a completely vaporized source gas to a process chamber. The vaporizer is connected to an inlet end and is supplied with a liquid source material. Inlet; A vaporization space for vaporizing the source material supplied from the injection hole; An orifice provided between 2 and 5 pieces between the injection hole and the vaporization space, each having an diameter of 0.1 to 0.5 mm; And an exhaust port for supplying the source material vaporized in the vaporization space to a process chamber.

Description

Vaporizer in depositing apparatus

1 is a schematic view of a deposition apparatus using a vaporizer according to an embodiment of the present invention

2 is a cross-sectional view of a vaporizer according to an embodiment of the present invention.

Figure 3 is an enlarged cross-sectional view of the inlet end including the liquid inlet in the vaporizer according to an embodiment of the present invention

4 is an enlarged plan view of a disc part provided with three orifices according to an embodiment of the present invention;

5 is an enlarged plan view of a disc part provided with two orifices according to an embodiment of the present invention;

* Explanation of symbols for the main parts of the drawings *

10 process chamber 12 source material

14 source supply unit 16 carburetor

30: vaporization space 34: heater

42 carrier gas supply 44 orifice

The present invention relates to a vaporizer of a vapor deposition apparatus, and more particularly, to a vaporizer of a vapor deposition apparatus capable of providing two to five orifices to increase vaporization efficiency and supply a completely vaporized source gas to a process chamber.

In general, a method of forming a material into a thin film is classified into a sputtering method using physical collision and a deposition method for supplying a gaseous raw material gas. Deposition methods include physical, chemical, and atomic layer deposition methods. The atomic layer deposition method has been proposed because of the higher integration of semiconductor devices, the composition and thickness uniformity and the step coverage are superior to the physical and chemical deposition methods.

The deposition method as described above is a method of depositing a desired thin film on a substrate by supplying a source gas necessary to form a thin film to a reaction chamber on which the substrate is mounted. However, when the source material used for thin film formation exists in a liquid state rather than a gaseous state, the source material in the liquid state is vaporized and then transferred to the surface of the substrate inside the reaction chamber. Therefore, the source material is supplied in the liquid state up to the source material injection port of the reaction chamber, and the liquid source material is vaporized through the vaporizer to be supplied as the source gas.

However, in the conventional vaporizer, the liquid source material is supplied to the vaporization space through one orifice, and the orifice may be closed due to a change in conditions, and the liquid source material may not be completely vaporized. It can be supplied to the process chamber to generate impurities. In order to remove impurities caused by the supply of source material in the liquid state, the thin film is deposited by changing the external temperature or by controlling the amount and flow rate of the source material in the liquid state. It is a factor to reduce the production efficiency.

In order to solve the problems of the prior art as described above, an object of the present invention is to provide a vaporizer of a vapor deposition apparatus capable of supplying two or more orifices to increase the vaporization efficiency and supply completely vaporized raw material to the process chamber.

The vaporizer of the deposition apparatus according to the present invention for achieving the above object is connected to the inlet end, the injection hole is supplied with the source material of the liquid state; A vaporization space for vaporizing the source material supplied from the injection hole; An orifice provided between 2 and 5 pieces between the injection hole and the vaporization space, each having an diameter of 0.1 to 0.5 mm; And an exhaust port for supplying the source material vaporized in the vaporization space to a process chamber.

The vaporizer of the deposition apparatus as described above, characterized in that it comprises a heater surrounding the outside of the vaporization space, maintaining the temperature of the vaporization space at 100 to 300 ℃.

In the vaporizer of the deposition equipment as described above, the inlet end is characterized in that it is installed 90 to 179 degrees around the orifice.

In the vaporizer of the deposition equipment as described above, the inlet end is characterized in that it is installed at 105 degrees.

In the vaporizer of the deposition apparatus as described above, when the two orifices are installed, the first orifice and the second orifice are located on the diameter of the disc portion in the disc portion where the orifice is installed, and the circumference of the disc portion The distance between the first orifice, the distance between the first orifice and the second orifice, and the distance between the second orifice and the circumference are equally spaced.

In the vaporizer of the deposition apparatus as described above, when three or more orifices are installed, each orifice is characterized in that to maintain an equal interval at the center of the disc portion.

The vaporizer of the deposition apparatus according to another embodiment of the present invention for achieving the above object is connected to the inlet end, the source material is supplied in the liquid state and has a diameter of 3.175 mm; A vaporization space for vaporizing the source material supplied from the injection hole and having a diameter of 10 to 20 mm; An orifice provided between 2 and 5 pieces between the injection hole and the vaporization space, each having an diameter of 0.2 to 0.3 mm; And an exhaust port for supplying the source material vaporized in the vaporization space to a process chamber.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic diagram of a vapor deposition apparatus using a vaporizer according to an embodiment of the present invention, Figure 2 is a cross-sectional view of the vaporizer according to an embodiment of the present invention, Figure 3 includes a liquid injection port in the vaporizer according to an embodiment of the present invention 4 is an enlarged plan view of a disc portion provided with three orifices according to an embodiment of the present invention, and FIG. 5 is an enlarged plan view of a disc portion provided with two orifices according to an embodiment of the present invention.

As shown in FIG. 1, a vapor deposition apparatus in which a vaporizer is installed includes a process chamber 10 in which a source gas is supplied to deposit a thin film on a substrate (not shown), and a process chamber 10 in which a liquid source material 12 is formed. A liquid source supply unit 14 for supplying to the gas source, a vaporizer 16 for converting the liquid source material 12 into a gaseous state and supplying it into the process chamber 10, and a liquid source material 12. ) Is provided with a carrier gas supply 42 for conveying the vaporizer 16 to the vaporizer 16.

The process chamber 10 is a closed space capable of maintaining a vacuum state so that the thin film deposition process is performed, and although not shown in the drawing, a distribution device for distributing a susceptor and a source gas on which a substrate is seated is provided. The liquid source supply unit 14 is a storage tank 18 in which a liquid source material 12 is stored, and a source material source (not shown) for supplying the liquid source material 12 to the storage tank 18. And a first carrier gas supply source (not shown) for supplying a first carrier gas such as Ar so that the liquid source material 12 can be supplied to the vaporizer 16 inside the storage tank 18. And a first flow controller (MFC) 50 for controlling the flow rate of the source material 12 in the liquid state.

Connected to the vaporizer 16, the carrier gas supply 42 is a second carrier gas supply source, such as Ar, for supplying the source material converted into the gas state in the vaporizer 16 to the process chamber 10 along the supply pipe (Not shown), a second flow controller (MFC) 20 for controlling the flow rate of the second carrier gas, and a gas heater 22 for heating the second carrier gas are provided. The vapor deposition apparatus is supplied to the trap apparatus 24 through a pumping line 26 without supplying a second carrier gas whose supply flow rate is not stable to the process chamber 10, and the trap apparatus 24. To the vacuum pump (not shown) is connected.

The vaporizer 16 is provided with an inlet at the top and an outlet at the bottom to easily remove the carrier gas or source material remaining therein with the pumping line 26. In the vapor deposition apparatus as shown in FIG. 1, a valve as necessary is used between the vaporizer 16 and the pumping line 26 and between the vaporizer 16 and the gas heater 22.

As shown in FIG. 2, the vaporizer 16 is located in the housing 32, the upper portion of the housing 32, the inlet 28 through which the source material 12 and the second carrier gas in a liquid state are supplied, and the liquid state. A vaporization space 30 in which the source material 12 is vaporized, a heater 34 installed around the vaporization space 30, and a source material changed into a gas state in the process chamber 10. It comprises a chamber connection 36 connected to a pipe for supplying to the pumping line and a pumping line connection 38 connected to the pumping line 26 to exhaust the source gas or the second carrier gas.

The pressure of the second carrier gas supplied to the inlet 28 is 15 to 25 psi, the pressure of the source material 12 in the liquid state is 20 to 25 psi, and the source material of the second carrier gas and the liquid state ( The mixture temperature of 12) is kept at room temperature. The heating temperature range of the vaporizer 16 is 100 ~ 300 ℃, it selects and uses the appropriate temperature according to the source material. The heater 34 uses a block heater of a type surrounding the vaporization space 30, and other types of heaters may be used if necessary.

As shown in FIG. 1, the vaporizer 16 is disposed vertically to naturally maintain the flow of the source material in the liquid state, and to vary the height of the wiring flowing into the pumping line 26 and the process chamber 10. The efficiency of collecting the carrier gas or the source material remaining in the inside of the pump 16 into the pumping line 26 can be improved. Although not shown in the drawing, the wires leading into the process chamber 10 are located higher than the pumping line 26.

Referring to FIG. 1, a process of introducing a source material 12 and a second carrier gas in a liquid state into the process chamber 10 is as follows.

A first carrier gas of an inert gas such as Ar is supplied so that the source material 12 in a liquid state can always be kept at a constant pressure in the storage tank 18 stored therein. When the pressure of the storage tank 18 and the process chamber 10 and the pressure of the first carrier gas are generated, and the valve is opened, the liquid source material 12 passes through the vaporizer 16. 10). The source material 12 in liquid state by the first flow controller 50 provided between the valve and the vaporizer 16 of the storage tank 18 before the liquid source material 12 enters the vaporizer 16. The flow rate of is controlled. The first carrier gas is supplied from the first carrier gas source and is introduced into the vaporizer 16 in a state in which the flow rate and temperature are controlled by the second flow controller 20. Before the source material 12 and the first carrier gas in the liquid state are supplied to the vaporizer 16, they are supplied to the vaporizer 16 in a mixed state in the same wiring. Therefore, it is easy to purge the interior of the vaporizer (16), it is easy to collect and remove the source material that may be present in the interior of the vaporizer 16 in a state that can be stagnant or altered through the pumping line (26) It is possible.

As shown in FIG. 3, an orifice 40 is provided between the injection hole 28 and the vaporization space 30. Since the diameters of the injection hole 28, the orifice 40, and the vaporization space 30 are about 3.175 mm, 0.2 mm, and 10 mmm, respectively, the liquid source material 12 is injected into the injection hole 28 of the vaporizer 16. When supplied, the pressure in the orifice 40 increases and the flow rate decreases. When the liquid source material 12 passing through the orifice 40 enters the vaporization space 30, the pressure decreases and the flow rate increases, and the fluid rapidly expands and changes to a gaseous state. The diameter of the orifice 40 is 0.1 mm to 0.5 mm, preferably 0.2 to 0.3 mm. In addition, the diameter of the vaporization space 30 in which the liquid source material 12 passed through the orifice 40 is vaporized is set to 10 mm or more, preferably 10 to 20 mm.

3 to 5, at the inlet of the vaporizer 16, the orifice 40 is formed in the disc 44, the disc 44 is formed perpendicular to the longitudinal direction of the orifice 40 and flat Maintain cotton. 2 to 5 orifices 40 are formed in the disc portion 44, and preferably, 3 are provided as shown in FIG. 5, when two orifices 40 are provided, each orifice 40 is arranged on the diameter of the disc portion 44, and the first orifice 40a is formed from the periphery of the disc portion 44. ), The distance between the first orifice 40a and the second orifice 40b, and the distance between the second orifice 40b and the periphery are defined as a, b, and c, respectively. Maintain equal intervals. 5, even when three orifices 40 are provided, the interval between the center of the disc portion 44 and each orifice 40 maintains the equal intervals. Maintaining equidistant intervals with each orifice 40 is such that the source of the liquid source material 12 introduced into the vaporization space 30 through each orifice 40 is most effectively in a gaseous state without being influenced by each other. To change.

In the prior art, since one orifice 40 is provided between the injection hole 28 and the vaporization space 30, the orifice 40 may be closed due to a change in conditions, or the liquid source material 12 may be closed. It may be supplied to the process chamber 10 without being completely vaporized to generate impurities. In order to remove impurities in the pipe and process chamber 10, the thin film is deposited by changing an external temperature or by controlling the amount and flow rate of the source material 12 in a liquid state. However, this problem reduces the performance of the deposition equipment. To reduce production efficiency.

Accordingly, in the present invention, in order to solve the problems of the prior art, as shown in Figs. 3 to 5, by providing two or more orifices 40 in the disc portion 44, the source material 12 in the liquid state It improves the efficiency of changing to the gas state, suppresses impurities generated by the introduction of the liquid source material 12 into the process chamber 10, and facilitates the removal of stagnant and condensed source material. Since two or more orifices 40 are provided between the inlet 18 and the vaporization space 30, the vaporization efficiency is dispersed by dispersing the resistance of the liquid source material 12 supplied to the vaporization space 30. In addition, the thin film deposition process may be performed even if one orifice 40 is closed.

In particular, in the atomic layer deposition apparatus, unlike other deposition apparatuses, the source material 12 in a liquid state is not always supplied, and two source materials are alternately supplied, so that the source material is stagnated at a step in which the source material is not supplied. Should be minimized. Due to the stagnation of the source material, in the prior art, the stagnation and alteration of the source material always occur in the injection hole 28 and the vaporization space 30. This problem occurs because in the prior art, the volume of the inlet of the vaporizer 32 adjacent to the orifice 40 is increased so that a lot of heat and pressure are applied. As a result, in the case of a heat sensitive source material, for example, a TEMA-based material, the source material 12 that has passed through the orifice 40 is stagnated in the vaporization space 30 and is deteriorated.

In order to solve this problem, in order to minimize the volume of the inlet portion of the vaporizer 16 adjacent to the orifice 40 in the present invention, the inlet portion of the vaporizer 16 in which the disc portion 44 is installed is centered on the disc portion 44. The angle a is to be 90 to 179 degrees, preferably 105 degrees. The volume at the inlet of the vaporizer 16 is reduced compared to the prior art, thus solving the problem of stagnation and deterioration of the source material.

The vaporizer of the vapor deposition apparatus according to the embodiment of the present invention has the following effects.

Between the liquid source material injection port and the vaporization space, two or more orifices are provided to increase the vaporization efficiency to supply the fully vaporized raw material to the process chamber to improve the vaporization efficiency and suppress the generation of impurities. In addition, it is easy to discharge the condensed thorough material by minimizing the volume at the inlet end of the vaporizer in which the orifice is installed.

Claims (7)

An inlet connected to the inlet end and supplied with a source material in a liquid state; A vaporization space for vaporizing the source material supplied from the injection hole; An orifice provided between 2 and 5 pieces between the injection hole and the vaporization space, each having an diameter of 0.1 to 0.5 mm; An exhaust port for supplying the source material vaporized in the vaporization space to a process chamber; Vaporizer of the deposition equipment comprising a. The method of claim 1, And a heater surrounding the outside of the vaporization space and maintaining a temperature of the vaporization space at 100 to 300 ° C. The method of claim 1, The inlet end is a vaporizer of the deposition equipment, characterized in that installed in the 90 to 179 degrees around the orifice. The method of claim 3, wherein The inlet end is vaporizer of the deposition equipment, characterized in that installed in 105 degrees. The method of claim 1, In the case where two orifices are installed, a first orifice and a second orifice are positioned on a diameter of the disc portion in the disc portion where the orifices are installed, and the distance between the circumference of the disc portion and the first orifice, the first The distance between the orifice and the second orifice, and the distance between the second orifice and the circumference are equidistantly spaced. The method of claim 1, When three or more orifices are installed, each orifice is maintained at equal intervals in the center of the disc portion vaporizer of the deposition equipment. An inlet connected to the inlet end and supplied with a source material in a liquid state; A vaporization space for vaporizing the source material supplied from the injection hole; An orifice installed between 2 and 5 between the injection hole and the vaporization space; An exhaust port for supplying the source material vaporized in the vaporization space to a process chamber; Including, With respect to the diameter of the orifice, the injection hole has a diameter of 10 to 15 times, and the vaporization space has a diameter of 30 to 100 times the vaporizer of the deposition equipment.

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