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KR20080098277A - Source gas supply device and method - Google Patents

Source gas supply device and method Download PDF

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Publication number
KR20080098277A
KR20080098277A KR1020070043770A KR20070043770A KR20080098277A KR 20080098277 A KR20080098277 A KR 20080098277A KR 1020070043770 A KR1020070043770 A KR 1020070043770A KR 20070043770 A KR20070043770 A KR 20070043770A KR 20080098277 A KR20080098277 A KR 20080098277A
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source material
source
evaporator
source gas
gas
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Korean (ko)
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이병일
장택용
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주식회사 테라세미콘
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Priority to KR1020070043770A priority Critical patent/KR20080098277A/en
Priority to JP2008099128A priority patent/JP5166946B2/en
Priority to CN2008100948314A priority patent/CN101298666B/en
Priority to TW097116189A priority patent/TWI383065B/en
Publication of KR20080098277A publication Critical patent/KR20080098277A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

An apparatus for supplying source gas and a method are provided to accurately control the deposition pressure in the chemical vapor deposition. An apparatus for supplying a source gas used for the thin film deposition by the chemical vapor deposition comprises as follows a source material storage(20) storing the source material which becomes raw materials of the source gas; a source material evaporator(30) heating up the source material and generates the source gas; a source material supply tube(40) supplying the source material stored in the source material storage to the source material evaporator; and a source material controller(42) which It is installed on the source material supply tube in order to supply the source material of the predetermined amount to the source material evaporator.

Description

소스가스 공급장치 및 방법{Apparatus and Method for Supplying Source Gas}Apparatus and Method for Supplying Source Gas

도 1은 종래의 소스가스 공급장치의 구성을 나타내는 도면.1 is a view showing the configuration of a conventional source gas supply device.

도 2는 본 발명의 일 실시예에 따른 소스가스 공급장치의 구성을 나타내는 도면. 2 is a view showing the configuration of a source gas supply apparatus according to an embodiment of the present invention.

- 도면의 주요 부분에 대한 부호의 설명 - -Explanation of symbols for the main parts of the drawing-

100: 소스가스 공급장치100: source gas supply device

20: 소스물질 저장부20: source material storage

30: 소스물질 증발부30: source material evaporator

40: 소스물질 공급관 40: source material supply pipe

50: 운반가스 공급부50: carrier gas supply unit

본 발명은 화학증착법에 의한 박막 증착시 고체 원료의 유량을 조절하는 소스가스 공급장치에 관한 것이다. 보다 상세하게는, 화학증착법에 의한 박막 증착시 증착챔버 내로 유입되는 소스가스의 압력을 정확하게 제어할 수 있어서 증착챔 버 내의 증착압력을 효과적으로 조절할 수 있는 소스가스 공급장치에 관한 것이다.The present invention relates to a source gas supply device for controlling the flow rate of a solid raw material during the deposition of a thin film by chemical vapor deposition. More specifically, the present invention relates to a source gas supply device that can accurately control the pressure of the source gas flowing into the deposition chamber during the deposition of a thin film by chemical vapor deposition, thereby effectively controlling the deposition pressure in the deposition chamber.

반도체 소자나 집적회로의 제작에는 다양한 종류의 박막(Thin film)이 증착 되는데 박막 증착 방법은 크게 물리 증착법(PVD: physical vapor deposition) 과 화학 반응을 이용한 화학 증착법(CVD: chemical vapor deposition)이 있다. Various kinds of thin films are deposited in the manufacture of semiconductor devices or integrated circuits. The thin film deposition methods include physical vapor deposition (PVD) and chemical vapor deposition (CVD) using chemical reactions.

이중 화학 증착법은 증착하고자 하는 필름을　가스 형태로 웨이퍼 표면으로 이동시켜 가스의 반응으로 표면에 필름을 증착시키는 방법으로서 재료의 선택에 따라 각종의 박막 형성이 가능하며, 비교적 간단한 공정으로 대량의 작업 처리가 가능하다는 장점을 가지고 있어 폭넓게 사용되고 있다. 또한, 화학 증착법은 미세 박막층의 형성에 용이하기 때문에 반도체 소자의 절연층과 능동층, 액정 표시 소자의 투명 전극, 전기 발광표시 소자의 발광층과, 보호층 등의 여러 분야로의 응용이 가능한 장점이 있다.The dual chemical vapor deposition method is a method of depositing a film on the surface by the reaction of gas by moving the film to be deposited to the wafer surface in the form of gas, and various thin films can be formed according to the selection of materials. It is widely used because it has the advantage of being possible. In addition, since the chemical vapor deposition method is easy to form a fine thin film layer, it can be applied to various fields such as an insulating layer and an active layer of a semiconductor device, a transparent electrode of a liquid crystal display device, a light emitting layer of an electroluminescent display device, and a protective layer. have.

화학 증착법의 경우 증착 압력은 증착하고자 하는 박막 물질의 원료를 공급하는 소스가스 공급장치로부터 공급되는 소스가스의 유량(즉, 소스가스의 압력)에 직접적으로 영향을 받는다. 즉, 화학 증착법에서 증착 압력을 적절하게 제어하기 위해서는 무엇보다도 소스가스 공급장치의 소스가스의 압력을 정확하게 조절하여야 한다. 소스가스의 압력 조절은 증착 속도를 정밀하고 일정하게 조절할 필요가 있는 경우에 특히 중요하다.In the case of chemical vapor deposition, the deposition pressure is directly affected by the flow rate of the source gas (ie, the pressure of the source gas) supplied from the source gas supply device supplying the raw material of the thin film material to be deposited. That is, in order to properly control the deposition pressure in the chemical vapor deposition method, first of all, the pressure of the source gas of the source gas supply device must be accurately adjusted. Pressure control of the source gas is particularly important where it is necessary to control the deposition rate precisely and consistently.

도 1은 종래의 소스가스 공급장치의 구성을 나타내는 도면이다. 종래의 소스가스 공급장치는 소스물질(12)을 저장하는 소스물질 증발부(11), 히터(13), 운반가스 공급부(14)로 구성된다. 일반적으로, 소스물질은 상온에서 고체의 분말 상태 로 존재하기 때문에 소스물질을 상온 이상으로 가열해야 소스물질이 소스가스화 되며, 이때 히터(13)가 소스물질을 가열하는 역할을 한다. 또한, 소스가스는 비중이 큰 관계로 이동도가 작기 때문에 운반가스(carrier gas)를 이용하여 소스가스가 증착챔버 내로 원활하게 이동하도록 한다. 대개 운반가스로는 불활성이며 소스가스의 증착챔버로의 이동을 용이하게 할 수 있는 고순도의 아르곤, 헬륨, 질소 등이 사용될 수 있다.1 is a view showing the configuration of a conventional source gas supply device. Conventional source gas supply device is composed of a source material evaporation unit 11, a heater 13, a carrier gas supply unit 14 for storing the source material (12). In general, since the source material is present in the form of a solid powder at room temperature, the source material is source gasified when the source material is heated to room temperature or more, and the heater 13 serves to heat the source material. In addition, since the source gas has a high specific gravity and low mobility, the source gas smoothly moves into the deposition chamber using a carrier gas. Usually, as the carrier gas, high purity argon, helium, nitrogen, or the like may be used, which is inert and can facilitate the movement of the source gas into the deposition chamber.

그러나, 상기와 같은 종래의 소스가스 공급장치는 다음과 같은 문제점이 있다. 첫째, 소스물질 증발부(11)에 남아 있는 소스물질(12)의 양에 따라 소스물질(12)의 증발량이 달라지기 때문에 소스가스의 압력을 정확하게 조절할 수 없다. 둘째, 소스물질(12)이 가열로 인해 휘발 및 응축 과정이 반복됨에 따라 소스물질(12)의 휘발 표면에 요철이 형성되고, 형성된 요철의 단면이 계속적으로 변화하게 되기 때문에, 소스물질의 표면적이 계속 변화하면서 소스물질(12)의 표면에서 발생되는 소스가스의 증발량이 달라지기 때문에 소스가스의 압력을 정확하게 조절할 수 없었다.However, the conventional source gas supply device as described above has the following problems. First, since the evaporation amount of the source material 12 varies depending on the amount of the source material 12 remaining in the source material evaporator 11, the pressure of the source gas cannot be precisely controlled. Second, as the volatilization and condensation process of the source material 12 is repeated due to heating, irregularities are formed on the volatilized surface of the source material 12, and the cross-section of the formed irregularities is continuously changed, so that the surface area of the source material 12 is changed. Since the evaporation amount of the source gas generated on the surface of the source material 12 is changed continuously, the pressure of the source gas cannot be accurately adjusted.

이에 본 발명은 상기한 문제점을 해결하기 위해 안출된 것으로서, 화학 증착 공정시 증착압력을 정확하게 조절할 수 있도록 하는 소스가스 공급장치 및 소스가스 공급방법을 제공하는 것을 목적으로 한다.Accordingly, an object of the present invention is to provide a source gas supply device and a source gas supply method for precisely adjusting the deposition pressure during a chemical vapor deposition process.

상기 목적을 달성하기 위하여, 본 발명에 따른 소스가스 공급장치는, 화학 증착법에 의한 박막 증착시 사용되는 소스가스 공급장치로서, 소스가스의 원료가 되는 소스물질을 저장하는 소스물질 저장부; 상기 소스물질을 가열하여 소스가스를 발생시키는 소스물질 증발부; 상기 소스물질 저장부에 저장되어 있는 소스물질을 상기 소스물질 증발부로 공급하는 소스물질 공급관; 및 소정양의 소스물질을 상기 소스물질 증발부로 공급하기 위하여 상기 소스물질 공급관 상에 설치되는 소스물질 제어부를 포함하여 구성된다. In order to achieve the above object, the source gas supply apparatus according to the present invention, a source gas supply apparatus used in the thin film deposition by the chemical vapor deposition method, a source material storage unit for storing a source material that is a raw material of the source gas; A source material evaporator for heating the source material to generate a source gas; A source material supply pipe for supplying a source material stored in the source material storage part to the source material evaporation part; And a source material controller installed on the source material supply pipe to supply a predetermined amount of source material to the source material evaporator.

상기 소스물질 증발부는 히터를 포함할 수 있다. The source material evaporator may include a heater.

상기 소스물질 제어부는 1 배치(batch)의 화학증착 공정에 필요한 양 만큼의 소스물질이 상기 소스물질 증발부에 공급되도록 구성될 수 있다. The source material control unit may be configured to supply the source material in an amount corresponding to the amount required for one batch of chemical vapor deposition process to be supplied to the source material evaporator.

상기 소스물질 증발부는 유입된 소스물질을 균일하게 분산시키는 수단을 포함할 수 있다. The source material evaporator may include means for uniformly dispersing the introduced source material.

상기 수단은 원뿔 형태일 수 있다.The means may be in the form of a cone.

상기 소스물질 증발부는 상기 소스물질 공급부보다 낮은 위치에 설치될 수 있다. The source material evaporator may be installed at a lower position than the source material supply part.

상기 소스가스를 증착챔버로 운반하는 운반가스를 공급하는 운반가스 공급부를 더 포함할 수 있다. The apparatus may further include a carrier gas supply unit configured to supply a carrier gas for transporting the source gas to the deposition chamber.

이하 첨부된 도면을 참조하여 본 발명을 상세하게 설명하도록 한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명의 일 실시예에 따른 소스가스 공급장치(100)의 구성을 나타내는 도면이다. 2 is a view showing the configuration of a source gas supply device 100 according to an embodiment of the present invention.

도시한 바와 같이, 소스가스 공급장치(100)는 기본적으로 화학 증착 공정을 통해 형성하려는 필름의 원료가 되는 소스물질(22)을 저장하는 소스물질 저장부(20), 소스물질(22)을 소스가스화 시키기 위한 소스물질 증발부(30)로 구성된다.As shown, the source gas supply device 100 is a source material storage unit 20 for storing the source material 22, which is a raw material of the film to be formed through a chemical vapor deposition process, source the source material 22 It consists of a source material evaporator 30 for gasification.

그리고, 소스물질 저장부(20)에 저장되어 있는 소스물질(22)을 소스물질 증발부(30)로 공급하기 위해서, 소스물질 공급관(40)이 소스물질 저장부(20)와 소스물질 증발부(30) 사이에 연결된다. 소스물질 공급관(40) 상에는 소스물질 공급관(40)을 통과하는 소스물질의 양을 조절하는 소스물질 제어부(42)가 설치된다. 소스물질 제어부(42)는 밸브를 포함할 수 있다.And, in order to supply the source material 22 stored in the source material storage unit 20 to the source material evaporator 30, the source material supply pipe 40 is a source material storage unit 20 and the source material evaporation unit Connected between 30. On the source material supply pipe 40, a source material control unit 42 for controlling the amount of the source material passing through the source material supply pipe 40 is installed. The source material control unit 42 may include a valve.

소스물질 제어부(42)는 소스물질(22)이 소스물질 저장부(20)에서 소스물질 증발부(30)로 공급될 때 공급 여부를 단속하되, 소스물질 제어부(42)가 개방 동작할 때 1 배치(batch)의 화학 증착 공정에 필요한 양에 해당하는 소스물질(32)을 공급한 후 폐쇄되도록 구성되는 것이 바람직하지만, 반드시 1 배치의 양만큼으로 한정될 필요는 없으며 경우에 따라서는 2 배치 이상의 복수 배치에 필요한 양의 소스물질을 소스물질 증발부에 공급할 수 있다.The source material control unit 42 controls whether the source material 22 is supplied when the source material 22 is supplied from the source material storage unit 20 to the source material evaporation unit 30, and when the source material control unit 42 opens. It is preferably configured to close after supplying the source material 32 corresponding to the amount required for the batch chemical vapor deposition process, but it is not necessarily limited to the amount of one batch, and in some cases more than two batches. The amount of source material needed for multiple batches can be fed to the source material evaporator.

한편, 소스물질 증발부(30)의 내부에는 소스물질 증발부(30)로 유입된 소스물질(32)을 균일하게 분산시키기 위한 분산 수단(34)을 설치한다. 분산 수단(34)은 원뿔 형태를 갖고 있으며, 그 상단의 꼭지점은 소스물질 증발부(30)의 상단으로 연결되는 소스물질 공급관(40)를 향하도록 설치되는 것이 바람직하다. 따라서, 소스물질 공급관(40)을 통해 공급된 소스물질(32)은 소스물질 증발부(30)의 내부로 낙하하게 되고, 도시한 바와 같이 낙하한 소스물질(32)은 분산 수단(34)의 상단 꼭지점에 닿은 후, 분산 수단(34)의 전체면으로 분산된다. On the other hand, inside the source material evaporator 30 is provided a dispersing means 34 for uniformly dispersing the source material 32 introduced into the source material evaporator (30). Dispersing means 34 has a conical shape, the top of the top is preferably installed to face the source material supply pipe 40 is connected to the top of the source material evaporation unit (30). Therefore, the source material 32 supplied through the source material supply pipe 40 falls into the inside of the source material evaporator 30, and as shown, the source material 32 that falls down is formed of the dispersing means 34. After reaching the top vertex, it is dispersed over the entire surface of the dispersing means 34.

따라서, 본 발명의 구성에 따르면, 1 배치의 화학 증착 공정이 끝나면 소스물질 증발부(30) 내의 소스물질(32)은 모두 소스가스화 되고, 다음 배치의 화학 증착 공정을 위해서는 소스물질을 새로 소스물질 저장부(20)로부터 공급받게 된다.Therefore, according to the configuration of the present invention, when one batch of chemical vapor deposition process is completed, the source material 32 in the source material evaporator 30 is all source gasized, and the source material is newly sourced for the next batch chemical vapor deposition process. It is supplied from the storage unit 20.

또한, 상기와 같은 소스물질의 공급이 원활히 이루어지도록 하기 위해 소스물질 증발부(30)는 소스물질 저장부(20) 보다 낮은 위치에 설치하여 소스물질 공급관(40)을 통해 공급된 소스물질이 중력에 의해 자유 낙하하도록 하는 것이 바람직하지만 반드시 이에 한정되지는 않는다. 예를 들어, 소스물질 저장부로부터 소스물질 증발부로 가스를 이용하여 소스물질을 위로 밀어 올리면서 공급하는 것이 가능하다면 소스물질 저장부가 소스물질 증발부보다 아래에 배치될 수도 있다.In addition, in order to facilitate the supply of the source material as described above, the source material evaporation unit 30 is installed at a lower position than the source material storage unit 20 so that the source material supplied through the source material supply pipe 40 is gravity It is preferable to free fall by, but is not necessarily limited thereto. For example, the source material reservoir may be disposed below the source material evaporator if it is possible to supply the source material while pushing up the source material from the source material reservoir to the source material evaporator.

또한, 소스물질(32)을 소스가스화 시키기 위하여, 소스물질 증발부(30)의 외부 측면과 하부면에는 전열선 등을 이용하여 구성되는 히터(36)를 설치한다.In addition, in order to source gas 32 the source material, the heater 36 is provided on the outer side and the bottom surface of the source material evaporation unit 30 using a heating wire.

한편, 소스가스 공급장치(100)는 소스가스의 원활한 이동을 위하여 운반가스가 저장되는 운반가스 공급부(50)를 포함할 수 있다. 대개 운반가스로는 불활성이며 소스가스의 증착챔버로의 이동을 용이하게 할 수 있는 고순도의 아르곤, 헬륨, 질소 등이 사용될 수 있다. 물론, 소스가스의 이동도가 충분한 경우에는 운반가스가 필요하지 않기 때문에 운반가스 공급부(50)를 설치하지 않을 수도 있다. On the other hand, the source gas supply device 100 may include a carrier gas supply unit 50 for storing the carrier gas for smooth movement of the source gas. Usually, as the carrier gas, high purity argon, helium, nitrogen, or the like may be used, which is inert and can facilitate the movement of the source gas into the deposition chamber. Of course, when the mobility of the source gas is sufficient, the carrier gas supply unit 50 may not be provided because the carrier gas is not required.

이와 같이, 본 발명에 따른 소스가스 공급장치(100)는 1 배치의 화학 증착 공정에 필요한 양만큼의 소스물질을 소스가스화 시켜 증착챔버에 공급함으로써, 소스물질 증발부에 남아 있는 소스물질의 양이나 표면적에 따라 소스가스의 압력이 일정하지 않다는 문제점을 해결하여, 화학 증착 공정시 증착압력을 정확하게 조절 할 수 있다는 장점이 있다. As such, the source gas supply apparatus 100 according to the present invention may source gas as much as the amount of the source material required for one batch of chemical vapor deposition process and supply the source material to the deposition chamber, thereby reducing the amount of source material remaining in the source material evaporation unit. Solving the problem that the pressure of the source gas is not constant according to the surface area, there is an advantage that the deposition pressure can be accurately adjusted during the chemical deposition process.

본 발명은 상술한 바와 같이 바람직한 실시예를 들어 도시하고 설명하였으나, 상기 실시예에 한정되지 아니하며 본 발명의 정신을 벗어나지 않는 범위 내에서 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의해 다양한 변형과 변경이 가능하다. 그러한 변형예 및 변경예는 본 발명과 첨부된 특허청구범위의 범위 내에 속하는 것으로 보아야 한다.Although the present invention has been shown and described with reference to preferred embodiments as described above, it is not limited to the above embodiments and various modifications made by those skilled in the art without departing from the spirit of the present invention. Modifications and variations are possible. Such modifications and variations are intended to fall within the scope of the invention and the appended claims.

본 발명에 따른 소스가스 공급장치에 의하면 화학 증착 공정시 소스가스의 압력 및 증착압력을 정확하고 일정하게 조절할 수 있는 효과가 있다.According to the source gas supply apparatus according to the present invention, the pressure and deposition pressure of the source gas during the chemical deposition process can be accurately and consistently controlled.

Claims (9)

화학 증착법에 의한 박막 증착시 사용되는 소스가스 공급장치로서, A source gas supply device used for thin film deposition by chemical vapor deposition, 소스가스의 원료가 되는 소스물질을 저장하는 소스물질 저장부; A source material storage unit for storing a source material which is a raw material of the source gas; 상기 소스물질을 가열하여 소스가스를 발생시키는 소스물질 증발부; A source material evaporator for heating the source material to generate a source gas; 상기 소스물질 저장부에 저장되어 있는 소스물질을 상기 소스물질 증발부로 공급하는 소스물질 공급관; 및A source material supply pipe for supplying a source material stored in the source material storage part to the source material evaporation part; And 소정양의 소스물질을 상기 소스물질 증발부로 공급하기 위하여 상기 소스물질 공급관 상에 설치되는 소스물질 제어부를 포함하는 것을 특징으로 하는 장치.And a source material control unit installed on the source material supply pipe to supply a predetermined amount of source material to the source material evaporator. 제1항에 있어서, The method of claim 1, 상기 소스물질 증발부는 히터를 포함하는 것을 특징으로 하는 장치.And the source material evaporator comprises a heater. 제1항에 있어서, The method of claim 1, 상기 소스물질 제어부는 1 배치(batch)의 화학증착 공정에 필요한 양 만큼의 소스물질이 상기 소스물질 증발부에 공급되도록 하는 것을 특징으로 하는 장치.And the source material control unit is configured to supply the source material evaporation unit with an amount of source material necessary for one batch of chemical vapor deposition process. 제1항에 있어서,The method of claim 1, 상기 소스물질 제어부는 2 배치(batch) 이상의 복수 배치의 화학증착 공정에 필요한 양 만큼의 소스물질이 상기 소스물질 증발부에 공급되도록 하는 것을 특징 으로 하는 장치.And the source material control unit is configured to supply the source material evaporation unit with an amount of source material necessary for two or more batches of chemical vapor deposition processes. 제1항에 있어서, The method of claim 1, 상기 소스물질 증발부는 유입된 소스물질을 균일하게 분산시키는 수단을 포함하는 것을 특징으로 하는 소스가스 공급장치.The source material evaporator source gas supply device characterized in that it comprises a means for uniformly dispersing the introduced source material. 제5항에 있어서, The method of claim 5, 상기 수단은 원뿔 형태인 것을 특징으로 하는 장치. Said means in the form of a cone. 제1항에 있어서, The method of claim 1, 상기 소스물질 증발부는 상기 소스물질 공급부보다 낮은 위치에 설치되는 것을 특징으로 하는 장치.And the source material evaporator is installed at a lower position than the source material supply. 제1항에 있어서, The method of claim 1, 상기 소스가스를 증착챔버로 운반하는 운반가스를 공급하는 운반가스 공급부를 더 포함하는 것을 특징으로 하는 장치. The apparatus further comprises a carrier gas supply for supplying a carrier gas for transporting the source gas to the deposition chamber. 1 배치(batch)의 화학증착 공정에 필요한 양의 소스물질만을 가열하여 발생시킨 소스가스를 증착챔버로 공급하는 것을 특징으로 하는 소스가스 공급방법.1. A source gas supply method comprising supplying a source gas generated by heating only a quantity of source material required for a batch chemical vapor deposition process to a deposition chamber.
KR1020070043770A 2007-05-04 2007-05-04 Source gas supply device and method Ceased KR20080098277A (en)

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KR200460716Y1 (en) * 2009-12-23 2012-05-31 주식회사 테라세미콘 Apparatus For Supplying Source Gas
KR20140005147A (en) * 2010-12-08 2014-01-14 오씨 외를리콘 발처스 악티엔게젤샤프트 Apparatus and method for depositing a layer onto a substrate

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CN107686966B (en) * 2017-07-31 2019-09-24 武汉华星光电半导体显示技术有限公司 Evaporation coating device

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JP2005026599A (en) * 2003-07-01 2005-01-27 Lintec Co Ltd Unit for evaporating and feeding liquid and apparatus for evaporating and feeding liquid using the same

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WO2011025256A2 (en) * 2009-08-26 2011-03-03 주식회사 테라세미콘 Deposition gas supply apparatus
WO2011025256A3 (en) * 2009-08-26 2011-05-19 주식회사 테라세미콘 Deposition gas supply apparatus
CN102576665A (en) * 2009-08-26 2012-07-11 泰拉半导体株式会社 Deposition gas supply apparatus
KR200460716Y1 (en) * 2009-12-23 2012-05-31 주식회사 테라세미콘 Apparatus For Supplying Source Gas
KR20140005147A (en) * 2010-12-08 2014-01-14 오씨 외를리콘 발처스 악티엔게젤샤프트 Apparatus and method for depositing a layer onto a substrate

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Comment text: Amendment to Specification, etc.

Patent event date: 20081009

Patent event code: PB09011R02I

B601 Maintenance of original decision after re-examination before a trial
E801 Decision on dismissal of amendment
PB0601 Maintenance of original decision after re-examination before a trial

Comment text: Report of Result of Re-examination before a Trial

Patent event code: PB06011S01D

Patent event date: 20090512

PE0801 Dismissal of amendment

Patent event code: PE08012E01D

Comment text: Decision on Dismissal of Amendment

Patent event date: 20090512

Patent event code: PE08011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20090402

Patent event code: PE08011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20081009

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20090303

Effective date: 20100831

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20100831

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20090303

Decision date: 20100831

Appeal identifier: 2009101001895