KR20080065461A - 박막형 광기전력 변환소자 모듈 및 그의 제조방법 - Google Patents
박막형 광기전력 변환소자 모듈 및 그의 제조방법 Download PDFInfo
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- KR20080065461A KR20080065461A KR1020070002612A KR20070002612A KR20080065461A KR 20080065461 A KR20080065461 A KR 20080065461A KR 1020070002612 A KR1020070002612 A KR 1020070002612A KR 20070002612 A KR20070002612 A KR 20070002612A KR 20080065461 A KR20080065461 A KR 20080065461A
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- thin film
- solar cell
- device module
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- unit cells
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 14
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- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 6
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- 238000003698 laser cutting Methods 0.000 description 6
- 238000010248 power generation Methods 0.000 description 6
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- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
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- 239000003921 oil Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910020328 SiSn Inorganic materials 0.000 description 1
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- 230000033228 biological regulation Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
- H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/70—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising bypass diodes
- H10F19/75—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising bypass diodes the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
- H10F77/933—Interconnections for devices having potential barriers
- H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
Description
Claims (15)
- 전기적으로 연결된 복수 개의 단위 셀에서 적어도 두 개 이상의 단위 셀을 선택하여 하나의 단자로 배선한 2단자 배선이 포함된 것을 특징으로 하는 박막형 광기전력 변환소자 모듈.
- 제 1항에 있어서, 상기 전기적 연결은 직렬연결 또는 병렬연결인 것을 특징으로 하는 박막형 광기전력 변환소자 모듈.
- 제 1항에 있어서, 상기 복수 개의 단위 셀은 2 이상의 행(行)과 2 이상의 열(列)로 배열된 것을 특징으로 하는 박막형 광기전력 변환소자 모듈.
- 제 3항에 있어서, 상기 행을 구성하는 복수 개의 단위 셀의 면적은 동일한 것을 특징으로 하는 박막형 광기전력 변환소자 모듈.
- 제 3항에 있어서, 상기 2 이상의 행은 직렬연결, 병렬연결 및 직렬연결과 병렬연결의 혼합 중 어느 하나의 형태로 전기적으로 연결되는 것을 특징으로 하는 박막형 광기전력 변환소자 모듈.
- 제 3항에 있어서, 상기 행의 개수는 상기 열의 개수보다 같거나 적은 것을 특징으로 하는 박막형 광기전력 변환소자 모듈.
- 제 1항에 있어서, 상기 단위 셀의 형상은 직사각형인 것을 특징으로 하는 박막형 광기전력 변환소자 모듈.
- 박막형 광기전력 변환소자 모듈의 제조방법에 있어서,전기적으로 연결된 복수 개의 단위 셀을 형성하는 단계; 및상기 복수 개의 단위 셀에서 적어도 두 개 이상의 단위 셀을 선택하여 하나의 단자로 배선한 2단자 배선을 형성하는 단계를 포함하는 박막형 광기전력 변환소자 모듈의 제조방법.
- 제 8항에 있어서, 상기 단위 셀의 형성단계는 기판 위에 적층된 투명전도층에 복수 개의 1차 셀을 형성하는 단계;상기 1차 셀 위에 반도체층을 적층하는 단계;상기 반도체층에 2차 셀을 형성하는 단계;상기 2차 셀 위에 후면전극층을 적층하는 단계; 및상기 후면전극층 및 반도체층에 3차 셀을 형성하는 단계인 것을 특징으로 하는 박막형 광기전력 변환소자 모듈의 제조방법.
- 제 9항에 있어서, 상기 1차, 2차 및 3차 셀은 2 이상의 행(行)과 2 이상의 열(列)로 형성하는 것을 특징으로 하는 박막형 광기전력 변환소자 모듈의 제조방법.
- 제 10항에 있어서, 상기 1차, 2차 및 3차 셀은 행으로 형성한 후 행 방향과 다른 방향으로 열을 형성하거나, 또는 열로 형성한 후 열 방향과 다른 방향으로 행을 형성하는 것을 특징으로 하는 박막형 광기전력 변환소자 모듈의 제조방법.
- 제 11항에 있어서, 상기 다른 방향은 직각방향인 것을 특징으로 하는 박막형 광기전력 변환소자 모듈의 제조방법.
- 제 10항에 있어서, 상기 행을 구성하는 셀의 면적은 동일한 것을 특징으로 하는 박막형 광기전력 변환소자 모듈의 제조방법.
- 제 10항에 있어서, 상기 행의 개수는 상기 열의 개수보다 같거나 적은 것을 특징으로 하는 박막형 광기전력 변환소자 모듈의 제조방법.
- 제 8항에 있어서, 상기 2단자 배선을 형성하는 단계 이전에 트리밍(Trimming) 공정을 더 추가하는 것을 특징으로 하는 박막형 광기전력 변환소자 모듈의 제조방법.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070002612A KR20080065461A (ko) | 2007-01-09 | 2007-01-09 | 박막형 광기전력 변환소자 모듈 및 그의 제조방법 |
EP08704662A EP2008313A4 (en) | 2007-01-09 | 2008-01-09 | THIN FILM MODULE FOR A PHOTOVOLTAIC DEVICE AND METHOD FOR THE PRODUCTION THEREOF |
US12/294,259 US20100006135A1 (en) | 2007-01-09 | 2008-01-09 | Thin-film photovoltaic device module and fabrication method thereof |
JP2008558218A JP2009529783A (ja) | 2007-01-09 | 2008-01-09 | 薄膜型光起電装置モジュール及びその製造方法 |
PCT/KR2008/000122 WO2008084975A1 (en) | 2007-01-09 | 2008-01-09 | Thin-film photovoltaic device module and fabrication method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070002612A KR20080065461A (ko) | 2007-01-09 | 2007-01-09 | 박막형 광기전력 변환소자 모듈 및 그의 제조방법 |
Publications (1)
Publication Number | Publication Date |
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KR20080065461A true KR20080065461A (ko) | 2008-07-14 |
Family
ID=39608829
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070002612A KR20080065461A (ko) | 2007-01-09 | 2007-01-09 | 박막형 광기전력 변환소자 모듈 및 그의 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100006135A1 (ko) |
EP (1) | EP2008313A4 (ko) |
JP (1) | JP2009529783A (ko) |
KR (1) | KR20080065461A (ko) |
WO (1) | WO2008084975A1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI499886B (zh) * | 2010-07-15 | 2015-09-11 | Univ Nat Taiwan | 估算電路的最大功率點功率的方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4272641A (en) * | 1979-04-19 | 1981-06-09 | Rca Corporation | Tandem junction amorphous silicon solar cells |
US5389158A (en) * | 1989-04-17 | 1995-02-14 | The Boeing Company | Low bandgap photovoltaic cell with inherent bypass diode |
CH685272A5 (de) * | 1993-06-29 | 1995-05-15 | Pms En Ag | Solarzellen-Anlage. |
JPH08125210A (ja) * | 1994-10-24 | 1996-05-17 | Jiyousuke Nakada | 受光素子及び受光素子アレイ並びにそれらを用いた電解装置 |
JP4053193B2 (ja) * | 1999-08-25 | 2008-02-27 | 株式会社カネカ | 薄膜光電変換モジュール |
DE60041568D1 (de) * | 1999-09-01 | 2009-04-02 | Kaneka Corp | Dünnschichtsolarzellenmodul und entsprechendes Herstellungsverfahren |
EP1172863A3 (en) * | 2000-07-10 | 2007-02-14 | Sanyo Electric Co., Ltd. | Method of installing solar cell modules, and solar cell module |
JP2002373997A (ja) * | 2001-04-10 | 2002-12-26 | Kanegafuchi Chem Ind Co Ltd | 集積型ハイブリッド薄膜光電変換モジュール |
AUPR719701A0 (en) * | 2001-08-23 | 2001-09-13 | Pacific Solar Pty Limited | Chain link metal interconnect structure |
US6966184B2 (en) * | 2002-11-25 | 2005-11-22 | Canon Kabushiki Kaisha | Photovoltaic power generating apparatus, method of producing same and photovoltaic power generating system |
-
2007
- 2007-01-09 KR KR1020070002612A patent/KR20080065461A/ko not_active Application Discontinuation
-
2008
- 2008-01-09 EP EP08704662A patent/EP2008313A4/en not_active Withdrawn
- 2008-01-09 JP JP2008558218A patent/JP2009529783A/ja active Pending
- 2008-01-09 US US12/294,259 patent/US20100006135A1/en not_active Abandoned
- 2008-01-09 WO PCT/KR2008/000122 patent/WO2008084975A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US20100006135A1 (en) | 2010-01-14 |
EP2008313A1 (en) | 2008-12-31 |
WO2008084975A1 (en) | 2008-07-17 |
JP2009529783A (ja) | 2009-08-20 |
EP2008313A4 (en) | 2012-08-01 |
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