KR20080017299A - Measuring apparatus and exposure apparatus and device manufacturing method - Google Patents

Abstract

The substrate stage 4 holds a substrate to which exposure light is irradiated through the liquid LQ. The measurement apparatus 30 measures the information regarding exposure light, and has a light-receiving system detachable with respect to the board | substrate stage 4. The light receiving system receives the exposure light through the liquid LQ while being held by the substrate stage 4.

Description

MEASURING APPARATUS, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD}

TECHNICAL FIELD The present invention relates to a measuring apparatus for measuring information relating to exposure light and an exposure apparatus for exposing a substrate through a liquid and a device manufacturing method.

This application claims priority based on Japanese Patent Application No. 2005-181712 for which it applied on June 22, 2005, and uses the content here.

In the photolithography process which is one of the manufacturing processes of micro devices (electronic devices etc.), such as a semiconductor device, the exposure apparatus which exposes a pattern image on a photosensitive substrate is used. In the manufacturing line of a micro device, when using a some exposure apparatus together, exposure amount (the dose amount) between each exposure apparatus must be matched in order to reduce the fluctuation | variation of the product manufactured by each exposure apparatus, etc. The following patent document discloses an example of a technique for matching exposure amounts between exposure apparatuses using an illuminometer that can measure relative illuminance between a plurality of exposure apparatuses.

[Patent Document 1] Japanese Patent Application Laid-Open No. 10-92722

[Patent Document 2] Japanese Patent Application Laid-Open No. 11-260706

[Patent Document 3] Japanese Patent Application Laid-Open No. 2001-338868

By the way, although the immersion exposure apparatus which exposes a board | substrate through a liquid is aimed at the purpose of the higher resolution of an exposure apparatus, etc., each immersion exposure is also carried out also when using a some liquid immersion exposure apparatus in a microdevice manufacturing line. The exposure doses between the devices must be matched. Therefore, the release of the technology which can measure the information about exposure light of each of several liquid immersion exposure apparatus smoothly is calculated | required.

This invention is made | formed in view of such a situation, and an object of this invention is to provide the measuring apparatus which can measure the information about the exposure light of each liquid immersion exposure apparatus smoothly. Moreover, it aims at providing the exposure apparatus which the information regarding exposure light is measured by this measuring apparatus, and the device manufacturing method using this exposure apparatus.

[Means for solving the problem]

In order to solve the said subject, this invention employ | adopts the following structures corresponding to each figure shown in embodiment. However, the symbols in parentheses attached to each element are only examples of the element and do not limit each element.

According to the 1st aspect of this invention, the measurement apparatus which measures the information regarding exposure light EL, The substrate stage 4 which hold | maintains the board | substrate P to which exposure light EL is irradiated through liquid LQ. There is provided a measuring apparatus including a light receiving system 32 which is detachable with respect to the light and which receives the exposure light EL through the liquid LQ while being held on the substrate stage 4.

According to the first aspect of the present invention, for example, information about exposure light of each of the plurality of liquid immersion exposure apparatuses can be measured smoothly through a liquid.

According to the 2nd aspect of this invention, in the exposure apparatus which exposes the board | substrate P with exposure light EL via liquid LQ, the movable body which detachably holds the measuring apparatus 30 of the said form ( An exposure apparatus EX having 4) is provided.

According to the 2nd aspect of this invention, an exposure process can be performed precisely using the measurement result of the measuring apparatus of the said aspect.

According to the 3rd aspect of this invention, the device manufacturing method using the exposure apparatus EX of the said aspect is provided.

According to the 3rd aspect of this invention, a device can be manufactured using the exposure apparatus which can perform an exposure process with high precision.

1 is a schematic configuration diagram showing an exposure apparatus according to a first embodiment.

2 is a side cross-sectional view showing a measurement device according to a first embodiment.

3 is a plan view of the measurement device according to the first embodiment.

4 is a flowchart for explaining an example of a measurement procedure using the measurement device.

5 is a schematic diagram illustrating an example of a measurement operation using a measurement device.

6 is a schematic diagram illustrating an example of a measurement operation using a measurement device.

7 is a side sectional view showing a measurement device according to a second embodiment;

8 is a side sectional view showing a measurement device according to a third embodiment;

9 is a flowchart for explaining an example of a manufacturing process of a micro device;

<Explanation of symbols for the main parts of the drawings>

1: liquid immersion mechanism 4: substrate stage

4F: upper surface (third surface) 4H: substrate holder

4S: inner side 8: conveying device

30: illuminance sensor (measurement device) 31: substrate

32: light receiving system 33: transmission member

34: light receiving element (light receiver) 35: circuit element (holding device)

35 ': circuit element (transmission device) 36: internal space

37: upper side 37A: first side

37B: second side 40: side

41: membrane 58: step

EL: Exposure light EX: Exposure device

G, G ': gap LQ: liquid

LR: liquid immersion area P: substrate

EMBODIMENT OF THE INVENTION Hereinafter, although embodiment of this invention is described referring drawings, this invention is not limited to this. In addition, in the following description, the XYZ rectangular coordinate system is set and the positional relationship of each member is demonstrated, referring this XYZ rectangular coordinate system. The Z-axis direction is defined as the direction orthogonal to the X-axis direction in the horizontal plane, the direction orthogonal to the X-axis direction in the horizontal plane, orthogonal to each of the Y-axis direction, the X-axis direction and the Y-axis direction. It is done. In addition, the rotation (inclination) directions around the X, Y, and Z axes are the θX, θY, and θZ directions, respectively.

First Embodiment

The first embodiment will be described. FIG. 1: is a schematic block diagram which shows the exposure apparatus EX which concerns on 1st Embodiment. In FIG. 1, the exposure apparatus EX is hold | maintained in the mask stage 3 which can move and hold the mask M, the substrate stage 4 which can hold and move the board | substrate P, and the mask stage 3 The illumination optical system IL for illuminating the mask M to be exposed with the exposure light EL, and the projection optical system PL for projecting the pattern image of the mask M illuminated with the exposure light EL onto the substrate P. FIG. ) And a control device 7 for controlling the operation of the entire exposure apparatus EX. Moreover, the exposure apparatus EX conveys the board | substrate P with respect to the board | substrate stage 4 currently disclosed by Unexamined-Japanese-Patent No. 7-240366 (corresponding US patent 6,707,528), for example. ).

In addition, the board | substrate here includes what apply | coated the photosensitive material (resist) on the base material, such as a semiconductor wafer, and the mask contains the reticle in which the device pattern to be reduced-projected on the board | substrate was formed. In this embodiment, a transmissive mask is used as the mask, but a reflective mask may be used.

The exposure apparatus EX of the present embodiment is a liquid immersion exposure apparatus in which the immersion method is applied to substantially shorten the exposure wavelength to improve the resolution and to substantially widen the depth of focus, and the image side exposure light EL of the projection optical system PL is EL. The liquid immersion mechanism 1 is formed by filling the optical path space K of the () with liquid LQ to form the liquid immersion region LR of the liquid LQ on the substrate P. The exposure apparatus EX uses the liquid immersion mechanism 1 while projecting at least the pattern image of the mask M onto the substrate P, thereby converting the optical path space K of the exposure light EL into the liquid LQ. Fill it. The exposure apparatus EX irradiates the substrate M with the exposure light EL passing through the mask M through the liquid LQ filled in the projection optical system PL and the optical path space K. ) Is projected onto the substrate (P). In the exposure apparatus EX of the present embodiment, the liquid region LQ filled in the optical path space K includes the projection region AR in a partial region on the substrate P including the projection region AR of the projection optical system PL. ) And a local liquid immersion method for locally forming the liquid immersion region LR of the liquid LQ smaller than the substrate P. In this embodiment, pure water is used as the liquid LQ.

The illumination optical system IL illuminates the predetermined illumination area | region on the mask M with exposure light EL of uniform illuminance distribution. Examples of the exposure light EL emitted from the illumination optical system IL include ultraviolet rays (g-ray, h-ray, I-ray) and KrF excimer laser light (wavelength 248 nm) such as ultraviolet rays emitted from a mercury lamp (DUV light). And vacuum ultraviolet light (VUV light) such as ArF excimer laser light (wavelength 193 nm) and F ₂ laser light (wavelength 157 nm). In the present embodiment, an ArF excimer laser light is used.

The mask stage 3 can move in the X-axis, Y-axis, and θZ directions while the mask M is held by the driving of the mask stage driving device 3D including an actuator such as a linear motor. The positional information of the mask stage 3 (specifically, the mask M) is measured by the laser interferometer 3L. The laser interferometer 3L measures the positional information of the mask stage 3 using the moving mirror 3K provided on the mask stage 3. The control device 7 drives the mask stage drive device 3D based on the measurement result of the laser interferometer 3L, and performs position control of the mask M held by the mask stage 3.

In addition, the moving mirror 3K may include not only a plane mirror but also a corner cube (retro reflector), and instead of fixing the moving mirror 3K to the mask stage 3, for example, the mask stage 3 You may use the reflecting surface formed by mirror-processing the end surface (side surface) of (). In addition, the mask stage 3 may be set as the structure which can be seasoned and finely disclosed by Unexamined-Japanese-Patent No. 8-130179 (corresponding US patent 6,721,034), for example.

The projection optical system PL projects the mask M pattern image onto the substrate P at a predetermined projection magnification, and has a plurality of optical elements, which are held by a barrel PK. It is. The projection optical system PL of this embodiment is a reduction system whose projection magnification is 1/4, 1/5, 1/8, etc., and reduces the mask pattern to the projection area | region AR which is conjugate with the above-mentioned illumination area. Form the phase. The projection optical system PL may be any one of a reduction system, an equal magnification system, and an expansion system. The projection optical system PL may be any of a refractometer that does not include a reflective optical element, a reflectometer that does not include a refractive optical element, and a reflection refractometer including a reflective optical element and a refractive optical element. In addition, the projection optical system PL may form either an inverted image or an upright image. In the present embodiment, only the final optical element FL closest to the image plane of the projection optical system PL among the plurality of optical elements of the projection optical system PL contacts the liquid LQ in the optical path space K. FIG.

The board | substrate stage 4 has the board | substrate holder 4H which hold | maintains the board | substrate P, and can hold | maintain and move the board | substrate P to the board | substrate holder 4H on the base member 5. The substrate holder 4H is disposed in the recessed portion 4R provided on the substrate stage 4, and the upper surface 4F of the substrate stage 4 other than the recessed portion 4R is held in the substrate holder 4H. It becomes a flat surface which becomes substantially the same height (in the same plane) as the surface of the board | substrate P. As shown in FIG. This is because, for example, part of the liquid immersion region LR protrudes from the surface of the substrate P during the exposure operation of the substrate P, and is formed on the upper surface 4F. In addition, only a portion of the upper surface 4F of the substrate stage 4, for example, a predetermined region surrounding the substrate P (including a range in which the liquid immersion region LR protrudes) is approximately the same height as the surface of the substrate P. FIG. You may make it. The upper surface 4F of the substrate stage 4 has liquid repellency with respect to the liquid LQ. In the present embodiment, the upper surface 4F is formed of a material having liquid repellency, such as a fluorine-based material such as polytetrafluoroethylene (Teflon®) or an acrylic material. In addition, there may be a step between the surface of the substrate P held by the substrate holder 4H and the upper surface 4F of the substrate stage 4. In addition, although the substrate holder 4H may be formed integrally with a part of the substrate stage 4, in this embodiment, the substrate holder 4H and the substrate stage 4 are separately configured, for example, by vacuum adsorption or the like. The holder 4H is fixed to the recessed portion 4R.

In addition, the substrate stage 4 has an inner side surface 4S facing the side surface of the substrate P held by the substrate holder 4H. The inner side surface 4S is the inner side surface of the recessed part 4R. For example, a gap G of about 0.1 to 1 mm is formed between the side surface of the substrate P held by the substrate holder 4H and the inner side surface 4S of the substrate stage 4. By setting the gap G to a predetermined value or less, the liquid LQ is formed inside the substrate stage 4 or the rear surface side of the substrate P from between the surface of the substrate P and the upper surface 4F of the substrate stage 4. Intrusion into is suppressed. In addition, since the upper surface 4F of the substrate stage 4 is liquid-repellent, it is also possible for the liquid LQ to penetrate into the interior of the substrate stage 4 or to the rear surface side of the substrate P by the gap G. It is suppressed. In addition, the inner side surface 4S may have liquid repellency.

The substrate stage 4 is driven by the substrate stage driving device 4D including an actuator such as a linear motor, and in the X-axis, Y-axis, Z-axis, θX, θY, and θZ directions while the substrate P is held. 6 degrees of freedom are movable in the direction. The positional information of the substrate stage 4 (specifically, the substrate P) is measured by the laser interferometer 4L. 4 L of laser interferometers measure the positional information about the X-axis, Y-axis, and (theta) Z direction of the board | substrate stage 4 using the moving mirror 4K provided in the board | substrate stage 4. As shown in FIG. Moreover, surface positional information (positional information about Z-axis, (theta) X and (theta) Y direction) of the surface of the board | substrate P hold | maintained at the board | substrate stage 4 is detected by the focus leveling detection system which is not shown in figure. The control device 7 drives the substrate stage drive device 4D based on the measurement result of the laser interferometer 4L and the detection result of the focus leveling detection system, and the substrate P held by the substrate stage 4. Performs position control.

In addition, the laser interferometer 4L may measure the position in the Z-axis direction and the rotation information in the θX and θY directions of the substrate stage 4, and the details thereof are described, for example, in Japanese Patent Application Laid-Open No. 2001-510577 ( Corresponding International Publication No. 1999/28790 pamphlet). Instead of fixing the movable mirror 4K to the substrate stage 4, for example, a reflective surface formed by mirror-processing a part (side surface, etc.) of the substrate stage 4 may be used.

The focus leveling detection system detects the inclination information (rotation angle) in the θX and θY directions of the substrate P by measuring the positional information in the Z-axis direction of the substrate P, respectively, at the plurality of measurement points. At least some of these measurement points may be set in the immersion area LR (or projection area AR), or all of them may be set outside the immersion area LR. For example, the laser interferometer 4L When the position information in the Z-axis, θX and θY directions of the substrate P can be measured, the focus leveling detection system is not provided so that the position information in the Z-axis direction can be measured during the exposure operation of the substrate P. The position control of the substrate P in the Z-axis, θX and θY directions may be performed at least during the exposure operation by using the measurement result of the laser interferometer 4L.

The liquid immersion mechanism 1 is provided at a position opposite to the substrate P held by the substrate stage 4 and the substrate P, and the final optical element of the projection optical system PL through which the exposure light EL passes. The optical path space K between FL is filled with the liquid LQ. The liquid immersion mechanism 1 is provided near the optical path space K, and supplies a supply port 12 for supplying the liquid LQ to the optical path space K and a recovery port 22 for recovering the liquid LQ. The liquid supply apparatus 11 which supplies the liquid LQ through the nozzle member 6 which has, the supply pipe 13, and the supply port 12 of the nozzle member 6, and the recovery port of the nozzle member 6 ( 22) and a liquid recovery device 21 for recovering the liquid LQ through the recovery pipe 23. The nozzle member 6 is an annular member provided to surround at least one optical element (in this example, the final optical element FL of the projection optical system PL) disposed on the image plane side of the projection optical system PL. In this embodiment, the supply port 12 which supplies the liquid LQ, and the recovery port 22 which collect | recovers the liquid LQ are formed in 6 A of lower surfaces of the nozzle member 6. As shown in FIG. Moreover, the flow path which connects the supply port 12 and the supply pipe 13, and the flow path which connects the recovery port 22 and the recovery pipe 23 are formed in the nozzle member 6 inside. In the lower surface 6A of the nozzle member 6, the supply port 12 is provided in each of a plurality of predetermined positions so as to surround the final optical element FL (optical path space K) of the projection optical system PL. have. Further, the recovery port 22 is provided outside the supply port 12 with respect to the final optical element FL in the lower surface 6A of the nozzle member 6, and the final optical element FL and the supply port are provided. It is provided in an annular shape so as to surround (12). In the present embodiment, a mesh member made of titanium or stainless steel (for example, SUS316) or a porous member made of ceramics is disposed in the recovery port 22.

The operation of the liquid supply device 11 and the liquid recovery device 21 is controlled by the control device 7. The liquid supply device 11 may deliver a clean, temperature-controlled liquid LQ, and the liquid recovery device 21 including a vacuum gauge may recover the liquid LQ. The control device 7 controls the liquid immersion mechanism 1 to perform the liquid supply operation by the liquid supply device 11 and the liquid recovery operation by the liquid recovery device 21 in parallel to thereby create the optical path space K. The liquid LQ is filled, and a liquid immersion region LR of the liquid LQ is locally formed in a portion of the substrate P.

In addition, the structure (structure of the nozzle member 6, etc.) of the liquid immersion mechanism 1 is not limited to the above-mentioned thing, What is necessary is just a structure in which the desired liquid immersion area | region LR is formed. For example, a liquid immersion mechanism disclosed in Japanese Patent Laid-Open No. 2004-289126 (corresponding US Patent No. 6,952,253) may be used.

2 is a cross-sectional view showing an example of a measurement device for measuring information relating to exposure light EL, and FIG. 3 is a plan view. In this embodiment, the illuminance sensor which measures the illuminance of exposure light EL as an measuring device which measures the information regarding exposure light EL is demonstrated as an example.

2 and 3, the illuminance sensor 30 is for measuring information on illuminance of the exposure light EL through the liquid LQ, and is applied to the substrate stage 4 capable of holding the substrate P. In FIG. It is removable. The illuminance sensor 30 of this embodiment is a board | substrate-type sensor (wafer-type sensor) which has the external shape substantially the same as the board | substrate P, and can be attached or detached to the board | substrate holder 4H provided in the board | substrate stage 4. As shown in FIG. The illuminance sensor 30 is provided with the base material 31 and the light reception system 32 which is hold | maintained by the base material 31 and receives the exposure light EL through the liquid LQ. The light receiving system 32 has a transmissive member 33 that can transmit (pass) the exposure light EL, and a light receiving element 34 that receives the exposure light EL transmitted through the transmissive member 33. The base material 31 is formed of predetermined material, such as stainless steel, for example.

The base material 31 holds the transmissive member 33 and has an internal space 36 in which the light receiving element 34 can be disposed. The recessed part 38 is formed in one part of the upper surface 37 of the base material 31, and the permeable member 33 is arrange | positioned at the recessed part 38. As shown in FIG. The inner space 36 is formed by the permeable member 33 being disposed in the recess 38 of the base material 31. The transmission member 33 is formed of quartz, for example, and can transmit the exposure light EL (it can pass through). And 37 A of upper surfaces of the permeable member 33 hold | maintained by the base material 31, and the upper surface 37B of the base material 31 which hold | maintained the permeable member 33 are in substantially the same plane. In the following description, the upper surface 37A formed by the transmissive member 33 among the upper surfaces of the illuminance sensor 30 is appropriately referred to as the first surface 37A, and the upper surface 37B formed by the substrate 31. Is appropriately referred to as second surface 37B. In addition, the whole upper surface of the illuminance sensor 30 including the first surface 37A and the second surface 37B is appropriately referred to as the upper surface 37. The second surface 37B is disposed around the first surface 37A and is provided to surround the first surface 37A.

The internal space 36 is formed between the base material 31 and the permeable member 33 held by the base material 31. The light receiving element 34 is disposed in the internal space 36. Light (exposure light EL) passing through the transmission member 31 reaches the light receiving element 34, and the light receiving element 34 receives light (exposure light EL) transmitted through the transmission member 33. can do. In addition, an optical system (lens system) may be disposed between the transmission member 33 and the light receiving element 34.

In addition, when the numerical aperture of the projection optical system PL is large (e.g., when the numerical aperture NA is 1.0 or more), when a gas exists between the transmission member 33 and the light receiving element 34, part of the exposure light EL is included. Light, that is, light having a large incident angle to the transmission member 33 may be totally reflected on the lower surface (light emission surface) of the transmission member 33. Therefore, the transmissive member 33 and the light receiving element 34 may be brought into close contact with each other so that no gas is interposed between the transmissive member 33 and the light receiving element 34, and the furnace is disposed between the transmissive member 33 and the light receiving element 34. The liquid having a refractive index greater than that of gas (air) may be interposed between the liquid and the like, or a light receiving element may be directly formed (patterned) on the lower surface of the transmission member 33.

The light receiving element 34 includes, for example, a light conversion element, and outputs an electric signal in accordance with the incident energy of the irradiated exposure light EL. As the light receiving element 34, a light conversion element using a photovoltaic effect, a Schottky effect, an optoelectronic effect, a photoconductive effect, a photoelectron emission effect or a superconducting effect can be used.

In addition, the illuminance sensor 30 has a circuit element 35 connected to the light receiving element 34. The circuit element 35 is connected to the light receiving element 34 and includes a holding device for holding the light reception result received by the light receiving element 34. The circuit element 35 includes an amplifier circuit (amplifier) in which a signal (illuminance signal) from the light receiving element 34 is output through a wiring, an amplification rate memory device storing the amplification ratio of the amplification circuit, and peaks of the illuminance signal amplified by the amplification circuit. A peak hold circuit for holding a value, a memory element for storing a signal output from the light receiving element 34, and the like.

The peripheral region of the illuminance sensor 30 has liquid repellency (contact angle with the liquid LQ is 90 ° or more) with respect to the liquid LQ. In the present embodiment, the second surface 37B of the illuminance sensor 30 has liquid repellency. A film 41 having liquid repellency is formed on the second surface 37B, and the liquid repellency is imparted to the second surface 37B by the film 41. The film 41 includes, for example, a fluorine-based material or an acrylic material such as polytetrafluoroethylene (Teflon®). On the other hand, the film 41 is not formed in the first surface 37A. In addition, a liquid-repellent film is also formed on the side surface 40 of the illuminance sensor 30 (substrate 31), so that each of the second surface 37B and the side surface 40 has liquid repellency with respect to the liquid LQ. Also good.

Next, the procedure of measuring the illuminance of exposure light EL using the illuminance sensor 30 which has the above-mentioned structure is demonstrated, referring the flowchart of FIG.

As mentioned above, the illuminance sensor 30 has the external shape substantially the same as the board | substrate P, and the conveying apparatus 8 can convey the illuminance sensor 30 with respect to the board | substrate stage 4. As shown in FIG. In order to measure the illuminance of the exposure light EL using the illuminance sensor 30, the control device 7 uses the conveying device 8 to control the illuminance sensor 30 on the substrate holder of the substrate stage 4. 4H) (loading) (step SA1). The control apparatus 7 holds the illuminance sensor 30 carried in by the conveying apparatus 8 with the board | substrate holder 4H. The substrate holder 4H holds the lower surface 43 of the illuminance sensor 30 (step SA2).

FIG. 5 is a diagram illustrating the illuminance sensor 30 held in the substrate holder 4H. 4H of board | substrate holders of this embodiment are provided in the base material 50, the upper surface of the base material 50, and the support part 51 which consists of several pin-shaped members which support the lower surface 43 of the illuminance sensor 30, And an upper surface facing the lower surface 43 of the illuminance sensor 30, and provided with a circumferential wall portion (rim portion) 52 provided to surround the support portion 51. Moreover, the inlet port 53 connected with the vacuum system not shown is provided in the upper surface of the base material 50. The control device 7 drives the vacuum gauge and inhales gas in the space 54 formed by the lower surface 43 of the illuminance sensor 30 supported by the base material 50, the circumferential wall part 52, and the support part 51. By sucking through 53, the space 54 is made into negative pressure, so that the lower surface 43 of the illuminance sensor 30 is sucked and held by the support part 51. As shown in FIG. That is, the board | substrate holder 4H of this embodiment is equipped with what is called a pin chuck mechanism, and can adsorb | suck and hold each of the illuminance sensor 30 and the board | substrate P. As shown in FIG. In addition, the control device 7 can separate the illuminance sensor 30 (substrate P) from the substrate holder 4H by releasing the suction operation through the inlet port 53. In this way, the substrate holder 4H provided on the substrate stage 4 detachably holds each of the illuminance sensor 30 and the substrate P. FIG.

The upper surface 4F of the substrate stage 4 is disposed around the upper surface 37 (second surface 37B) of the illuminance sensor 30 held by the substrate holder 4H. The upper surface 37 (second surface 37B) of the illuminance sensor 30 and the upper surface 4F of the substrate stage 4 are in substantially the same plane. Moreover, the inner side surface 4S of the recessed part 4R of the board | substrate stage 4 is arrange | positioned in the position which opposes the side surface 40 of the illuminance sensor 30 hold | maintained at the board | substrate holder 4H. A predetermined gap G 'is formed between the side surface 40 of the illuminance sensor 30 and the inner side surface 4S of the substrate stage 4. Since the illuminance sensor 30 has approximately the same outer shape as the substrate P, the side surface 40 of the illuminance sensor 30 held by the substrate holder 4H and the inner surface 4S of the substrate stage 4 are provided. The gap G formed in the gap G and the gap G formed between the side surface of the substrate P held by the substrate holder 4H and the inner surface 4S of the substrate stage 4 are approximately the same (0.1 to 0.1). About 1 mm). Accordingly, the liquid LQ is formed between the upper surface 37 of the illuminance sensor 30 and the upper surface 4F of the substrate stage 4 to the inside of the substrate stage 4 or the lower surface 43 side of the illuminance sensor 30. Invasion is suppressed. In addition, since the upper surface 4F of the substrate stage 4 and the second surface 37B, which is an area around the upper surface 37 of the illuminance sensor 30, are liquid-repellent, the liquid LQ is formed inside the substrate stage 4. Or invasion to the lower surface 43 side of the illuminance sensor 30 is suppressed. In addition, when the inner side surface 4S and / or the side surface 40 have liquid repellency, invasion of the liquid LQ can be prevented more reliably.

After holding the illuminance sensor 30 in the substrate holder 4H, the control device 7 controls the substrate stage 4 to hold the illuminance sensor 30 held in the substrate holder 4H of the substrate stage 4. Moves to the measurement position (step SA3). That is, the control device 7 has a first surface 37A which is an upper surface of the transmissive member 33 of the illuminance sensor 30 held in the final optical element FL of the projection optical system PL and the substrate holder 4H. The substrate stage 4 is moved to face. And the control apparatus 7 immerses the immersion mechanism 1 in a state where the final optical element FL of the projection optical system PL faces the first surface 37A of the illuminance sensor 30 held by the substrate holder 4H. ), The operation of forming the liquid immersion region LR of the liquid LQ on the first surface 37A of the illuminance sensor 30 is started. That is, the liquid immersion mechanism 1 transfers the supply operation of the liquid LQ from the supply port 12 for forming the liquid immersion region LR to the upper surface 37 (first surface 37A) of the illuminance sensor 30. Start (step SA4). In the following description, in order to fill the optical path space K with the liquid LQ in the initial state (state of a beam) in which the liquid LQ does not exist, the liquid LQ is compared with respect to the optical path space K. The operation of supplying is appropriately called an initial filling operation. That is, the initial filling operation refers to an operation of forming the liquid immersion region LR on the upper surface 37 by supplying the liquid LQ to the upper surface 37 in the absence of the liquid LQ.

When starting the initial filling operation, the control device 7 roughly stops the substrate stage 4. That is, when the control device 7 starts the initial filling operation for forming the liquid immersion region LR by using the liquid immersion mechanism 1, the final optical element FL of the projection optical system PL and the substrate holder 4H The relative position with the illuminance sensor 30 held at is maintained. And the control apparatus 7 performs the supply operation | movement and collection | recovery operation | movement of the liquid LQ by the liquid immersion mechanism 1 in parallel with the board | substrate stage 4 substantially stopped, as shown in FIG. The liquid immersion region LR of the liquid LQ is formed on the first surface 37A of the illuminance sensor 30.

And the control apparatus 7 illuminates the optical system IL in the state in which the liquid immersion area | region LR was formed in the 1st surface 37A of the illuminance sensor 30 hold | maintained at the board | substrate holder 4H of the board | substrate stage 4. The exposure light EL is emitted from the light source. The exposure light EL is irradiated to the illuminance sensor 30 held by the substrate holder 4H through the projection optical system PL and the liquid LQ. The illuminance sensor 30 receives the exposure light EL through the liquid LQ by the light receiving system 32 while being held by the substrate holder 4H of the substrate stage 4. The illuminance sensor 30 receives the exposure light EL through the liquid LQ, thereby measuring the information on the illuminance of the exposure light EL (step SA5). The light receiving result received by the light receiving element 34 of the light receiving system 32 is held (stored) in the circuit element 35 (step SA6).

In addition, when the control device 7 measures the illuminance of the exposure light EL using the illuminance sensor 30, the light receiving surface (first surface 37A) and the projection optical system PL of the illuminance sensor 30 are measured. And their positional relationship so that the upper surface formed through the liquid LQ approximately coincides. When the illuminance of the exposure light EL is measured using the illuminance sensor 30, the control device 7 performs the supply operation and the recovery operation of the liquid LQ by the liquid immersion mechanism 1 in parallel. . Thereby, the immersion region LR of the liquid LQ which is always clean and temperature-adjusted can be formed, and the illuminance sensor 30 carries out exposure light EL through the clean and temperature-adjusted liquid LQ. The light receiving element 34 can receive light. Moreover, the control apparatus 7 stops the board | substrate stage 4 substantially, when the illuminance sensor 30 is measuring the illuminance of exposure light EL, and the last optical element FL of the projection optical system PL is carried out. And the relative position of the illuminance sensor 30 held in the substrate holder 4H, specifically, the relative position of the liquid immersion region LR and the transmission member 33.

The size of the first surface 37A of the penetrating member 33 is sufficiently larger than the size of the liquid immersion region LR, and the liquid immersion region LR is smoothly inside the first surface 37A of the penetrating member 33. Can be formed. By obtaining the size of the formed liquid immersion region LR by experiment or simulation in advance, the transmissive member 33 having the first surface 37A larger than the liquid immersion region LR can be provided in the illuminance sensor 30. . Further, the liquid immersion region LR smaller than the first surface 37A of the permeable member 33 is appropriately adjusted by adjusting the liquid supply operation and / or recovery operation or the shape of the nozzle member 6 by the liquid immersion mechanism 1. May be formed.

In addition, in this embodiment, although the permeation | transmission member 33 (upper surface 37A) has a substantially circular external shape as shown in FIG. 3, it is a shape different from the shape and / or size of the liquid immersion area | region LR. You can also do

In the present embodiment, since the liquid-repellent film 41 is formed on the second surface 37B of the substrate 31 disposed around the first surface 37A of the transparent member 33, the transparent member 33 is formed. It is suppressed that the liquid LQ of the liquid immersion region LR formed on the first surface 37A of the liquid flows out of the first surface 37A.

In addition, since the liquid-repellent film 41 is not formed in the first surface 37A of the permeable member 33 in which the liquid immersion region LR of the liquid LQ is formed, deterioration in measurement accuracy can be suppressed. . That is, since the liquid repellent film 41 may be degraded by irradiation of the exposure light EL, the liquid repellent film 41 is applied to the first surface 37A of the transmission member 33 to which the exposure light EL is irradiated. If the 41 is formed, the state of the film 41 may be changed by the exposure of the exposure light EL. When the state of the film 41 is changed, there is a possibility that the light receiving state of the light receiving element 34 is changed, such as the illuminance (light quantity) of the exposure light EL reaching the light receiving element 34 is changed. In addition, when the surface of the film 41 becomes rough by irradiation of exposure light EL, the exposure light EL irradiated to the film 41 may be scattered. When such a situation occurs, there is a possibility that the measurement accuracy of the illuminance sensor 30 is deteriorated. In the present embodiment, the liquid immersion region LR is formed, and the film 41 is not formed on the first surface 37A of the transmissive member 33 to which the exposure light EL is irradiated. Can be suppressed.

In addition, although the film 41 is not formed in the 1st surface 37A of the permeation | transmission member 33, the liquid immersion area | region LR is smaller than the 1st surface 37A of the permeation | transmission member 33 of the illuminance sensor 30. When the liquid immersion region LR of the liquid LQ is formed on the first surface 37A of the transparent member 33, the liquid immersion region LR and the first surface 37A of the transmission member 33 are small. Since the relative position with respect to is maintained (since the substrate stage 4 is substantially stopped), the liquid LQ of the liquid immersion region LR flows out of the first surface 37A of the illuminance sensor 30. It is suppressed.

After the measurement using the illuminance sensor 30 is finished, the control device 7 removes the liquid immersion region LR from the upper surface 37 of the illuminance sensor 30. When the liquid immersion region LR is removed from the upper surface 37 of the illuminance sensor 30, the control device 7 stops the liquid supply operation through the supply port 12, and the liquid through the recovery port 22. The recovery operation is continued for a predetermined time. As a result, the entire liquid LQ in the liquid immersion region LR can be recovered (removed) (step SA7). In the following description, the operation | movement which collect | recovers all the liquid LQ (liquid LQ of the liquid immersion area | region LR) which fills the optical path space K is suitably called "full recovery operation."

In addition, since the first surface 37A does not have liquid repellency, there is a possibility that a thin film or a small droplet of liquid LQ remains on the first surface 37A after performing the previous recovery operation. The control device 7 indicates that the complete recovery operation of the liquid immersion mechanism 1 has been completed when the recovery amount of the liquid LQ from the recovery port 22 of the nozzle member 6 has become a predetermined amount or less (approximately 0). To judge.

After all the liquid LQ of the liquid immersion region LR is recovered, the control device 7 unloads (unloads) the illuminance sensor 30 from the substrate stage 4 using the transfer device 8 (step SA8).

The illuminance sensor 30 unloaded from the substrate stage 4 is extracted (read) from the analysis device in which the storage information stored in the holding device (memory device) 35 is arranged at a predetermined position (step SA9).

In the manufacturing system of the microdevice (semiconductor apparatus) of this embodiment, as shown in the schematic diagram of FIG. 6, some liquid immersion exposure apparatus EX1-EX4 is used together. These plurality of exposure apparatuses EX1-EX4 are connected to the same host computer EM, and each operation state is monitored, and production management is carried out. The illuminance of each of these exposure apparatuses EX1-EX4 is measured by the illuminance sensor 30 as a reference illuminometer, and is used in order to match the exposure amount between exposure apparatuses, and the like. Therefore, the memory information stored in the circuit element 35 of the illuminance sensor 30 is extracted by an analysis device connected to the host computer EM.

In addition, in the schematic diagram of FIG. 6, after the measurement by each exposure apparatus EX1-EX4 is completed, the measurement result in each exposure apparatus is extracted by the analyzer connected to host computer EM, In addition to the measurement data, information indicating which exposure device measurement data may be retained.

In addition, in the schematic diagram of FIG. 6, after the measurement by each exposure apparatus EX1-EX4 is completed, the measurement result in each exposure apparatus is extracted with the analyzer connected to the host computer EM, The measurement data held in the illuminance sensor 30 may be extracted and sent to the host computer EM with an analysis device arranged at a predetermined position every measurement completion. In this case, when sending measurement data from the analyzer to the host computer, information indicating which exposure device is measured data may be sent together.

In addition, the illuminance sensor 30 wirelessly transmits the measurement data to the control device 7, and the control device 7 transmits the measurement data to the host computer EM in response to the identification information (for example, an air number and the like) of the exposure device. You may send. In addition, although the manufacturing system of FIG. 6 is equipped with four liquid immersion exposure apparatus EX1-EX4, the number and kind of exposure apparatus are not limited to this, For example, it contains a normal exposure apparatus which is not immersion type. It may be used.

In addition, the conveyance of the illuminance sensor 30 between two exposure apparatuses may use the conveyance system which conveys the board | substrate P, and an operator may carry out.

Moreover, the illuminance sensor (not shown) which is standing on the board | substrate stage 4 of each exposure apparatus EX1-EX4 is provided. By correcting the measurement result of the permanent illuminance sensor using the measurement result of the detachable illuminance sensor 30, the illuminance with which correspondence with the other exposure apparatus was derived from the measurement result of the permanent illuminance sensor can be derived.

As described above, the illuminance sensor 30 which can be attached to and detached from the substrate stage 4 can smoothly measure information on the illuminance between the exposure apparatuses through the liquid LQ. And the illuminance sensor 30 can be conveyed smoothly with respect to the board | substrate stage 4 using the conveying apparatus 8. Since the projection optical system PL and various precision apparatuses (members) are arranged in the vicinity of the substrate stage 4, for example, in the case where the worker attaches or detaches the illuminance sensor 30 to the substrate stage 4 manually, It is difficult to perform smooth work, to cause defects in precision instruments, and the like, and to change the environment (cleanliness, temperature, humidity, etc.) in which the exposure apparatus is placed. In this embodiment, the illuminance sensor 30 is made into the substantially same external shape as the board | substrate P, and the illuminance sensor 30 is carried out using the conveying apparatus 8 which loads and unloads the board | substrate P to the board | substrate holder 4H. ) Is attached to and detached from the substrate holder 4H, so that the illuminance sensor 30 can be attached to and detached from the substrate stage 4 smoothly. Moreover, since the interruption time of the exposure process according to illuminance measurement can be shortened, the operation rate of exposure apparatus EX can be improved.

Moreover, since the illuminance sensor 30 has the substantially same external shape as the board | substrate P, and is removable with respect to the board | substrate holder 4H, it is about the same as when forming the immersion area | region LR on the board | substrate P. FIG. Under the condition (operation), the liquid immersion region LR can be formed on the upper surface 37 of the illuminance sensor 30 to measure information on illuminance.

In addition, the second surface 37B disposed around the first surface 37A without forming the film 41 is formed on the first surface 37A on which the liquid immersion region LR is formed. Since the film 41 is formed in this, the outflow of the liquid LQ can be suppressed and the measurement accuracy of the illuminance sensor 30 can be maintained.

In the present embodiment, the initial filling operation is started on the upper surface 37 (first surface 37A) of the illuminance sensor 30, and the illuminance sensor 30 is also measuring the exposure light EL. The liquid immersion region LR is formed on the first surface 37A. That is, the liquid immersion region LR is always formed on the first surface 37A during the measurement operation using the illuminance sensor 30. Therefore, even if there is a clearance gap between the permeation | transmission member 33 and the base material 31, invasion of the liquid LQ into the internal space 36 from the clearance can be suppressed.

In addition, since the liquid immersion region LR is not formed in the gap G 'between the upper surface 37 of the illuminance sensor 30 and the upper surface 4F of the substrate stage 4, the liquid is formed through the gap G'. (LQ) can be prevented from invading the inside of the substrate stage 4. In addition, the second surface 37B of the illuminance sensor 30 and the upper surface 4F of the substrate stage 4 are substantially coplanar and disposed around the second surface 37B and the second surface 37B. Since the upper surface 4F of the substrate stage 4 is liquid-repellent, even if the liquid immersion region LR is formed so as to cover the gap G 'temporarily, occurrence of problems such as the outflow of the liquid LQ can be suppressed. have.

In addition, the initial filling operation is not started on the top surface 37 of the illuminance sensor 30, but the initial filling operation is started on the top surface of another object, for example, the top surface 4F of the substrate stage 4, and the top surface 4F. After the liquid immersion region LR is formed, the substrate stage 4 is moved in the XY plane while continuing the supply operation and the recovery operation of the liquid LQ by the liquid immersion mechanism 1 to thereby move the substrate stage. The liquid immersion region LR formed on the upper surface 4F of (4) may be moved to the upper surface 37 of the illuminance sensor 30. Since the gap G 'is minute and the upper surface 4F of the substrate stage 4 and the upper surface 37 (the second surface 37B) of the illuminance sensor 30 are liquid-repellent, the liquid LQ flows out. Or intrusion can be prevented. In addition, even when the liquid immersion region LR is moved between the second surface 37B of the illuminance sensor 30 and the upper surface 4F of the substrate stage 4, the liquid immersion region ( LR) can be moved smoothly. The other object may be a measurement stage or the like that can move independently of the substrate stage 4.

In addition, in this embodiment, after the measurement operation | movement of the illumination intensity sensor 30 is complete | finished, the full recovery operation | movement of the liquid LQ of the liquid immersion area | region LR formed in the upper surface 37 of the illumination intensity sensor 30 is performed, The liquid immersion region LR is moved by moving the substrate stage 4 in the XY plane while performing the supply operation and the recovery operation of the liquid LQ by the liquid immersion mechanism 1 without recovering all of the liquid LQ. It is also possible to move from the upper surface 37 of the illuminance sensor 30 to an object other than the upper surface 4F of the substrate stage 4 or the substrate stage 4 (including a measurement stage or the like), for example.

In addition, in this embodiment, although the light receiving element 34 and the circuit element 35 are integrally provided in the base material 31, the light receiving element 34 is provided in the base material 31, and the circuit element 35 is provided. May be provided outside the base material 31. The light receiving element 34 and the circuit element 35 may be connected by, for example, a flexible connection cable. Alternatively, wireless transmission may be performed between the light receiving element 34 and the circuit element 35.

Second Embodiment

Next, 2nd Embodiment is described, referring FIG. The same or equivalent components as those of the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted.

In FIG. 7, the illuminance sensor 30 includes a base material 31, a transmissive member 33 held on the base material 31, a light receiving element 34 disposed in the internal space 36, and a light receiving element 34. Is provided with a circuit element 35 '. The circuit element 35 'of this embodiment is connected to the light receiving element 34, and is provided with the transmission apparatus which transmits the light reception result received by the light receiving element 34 by radio. Moreover, the exposure apparatus EX is equipped with the receiver 56 which receives the radio signal containing the measurement result transmitted from the circuit element (transmitter) 35 'of the illumination intensity sensor 30. As shown in FIG. The illuminance sensor 30 of this embodiment also has the substantially same external shape as the board | substrate P, and can be attached or detached to the board | substrate holder 4H. In the present embodiment, the measurement result received by the reception device 56 is displayed on the display device 57.

In addition, in this embodiment, the film 41 'is formed in the whole upper surface 37 including each of the 1st surface 37A and the 2nd surface 37B of the illumination intensity sensor 30. As shown in FIG. The film 41 'is formed of a material having liquid repellency and high transmittance with respect to the exposure light EL and resistant to the exposure light EL (ultraviolet light). In the present embodiment, the film 41 'is formed of "cytop" manufactured by Asahi Glass Corporation.

In this manner, the light reception result received by the light receiving element 34 may be wirelessly transmitted. As a result, for example, cables for transmitting the light reception result can be omitted. In addition, as in the present embodiment, by providing a film 41 'made of a cytop or the like, the upper surface 37 of the illuminance sensor 30 can be made liquid-repellent, thereby preventing the liquid LQ from leaking out or remaining. can do.

Third Embodiment

Next, a third embodiment will be described with reference to FIG. 8. In the following description, the same or equivalent components as those of the above-described embodiments are denoted by the same reference numerals to simplify or omit the description. In FIG. 8, a step 58 is provided between the first surface 37A of the transmission member 33 and the second surface 37B of the substrate 31. The size (diameter) of the transmissive member 33 is larger than the size (diameter) of the concave portion 38 of the base material 31, and the peripheral area of the lower surface of the transmissive member 33 is the upper surface 37B of the base material 31. It is kept in part of). In addition, in this embodiment, the base material 31 is formed of the material (fluorine-type resin etc.) which has liquid repellency, and can maintain the surface liquid repellency of the 2nd surface 37B without a liquid repellent film. Moreover, the 2nd surface 37B which is a peripheral area of the upper surface 37 of the illuminance sensor 30 hold | maintained by the substrate holder 4H, and the upper surface 4F of the substrate stage 4 arrange | positioned around it are substantially the same. It is on a plane.

Thus, even if the step 58 is formed between the first surface 37A and the second surface 37B, the initial filling operation and the total number of times of the liquid LQ are performed on the first surface 37A as in the above-described embodiment. Performing the operation prevents the liquid LQ from remaining in the step 58. In addition, as shown in FIG. 8, the inner space 36 can be enlarged by providing the transmission member 33 on a part of the upper surface 37B of the base material 31, so that the illuminance sensor 30 can be increased. Improve the degree of freedom of design. In addition, since the second surface 37B of the illuminance sensor 30 held by the substrate holder 4H and the upper surface 4F of the substrate stage 4 are approximately coplanar, the liquid is formed through the gap G '. It is possible to prevent the LQ from entering the inside of the substrate stage 4 or the lower surface 43 side of the illuminance sensor 30. In addition, the step 58 is small (for example, 2 mm or less), and in order to move the immersion region LR formed on another object onto the first surface 37A, the immersion region LR of the illuminance sensor 30 Also in the case of moving between the second surface 37B and the upper surface 4F of the substrate stage 4, the liquid immersion region LR can be smoothly moved while suppressing the outflow of the liquid LQ.

In addition, in each embodiment mentioned above, since the whole of the 1st surface 37A of the permeation | transmission member 33 does not need to permeate exposure light EL, the 1st surface 37A of the permeation | transmission member 33 is not required. May be coated with a material that does not transmit the exposure light EL, and an aperture (opening) through which the exposure light EL may pass may be formed in a portion thereof. In this case, the first surface 37A of the transmission member 33 may be covered with a liquid-repellent material that can transmit the exposure light EL, and the exposure light of the first surface 37A of the transmission member 33 may be covered. The liquid repellent film may be formed only on the surface of the region coated with the material that does not transmit (EL), and the liquid repellent film may not be formed on the surface of the region where the aperture (opening) through which the exposure light EL passes.

In addition, in the above-mentioned embodiment, although the 2nd surface 37B of the illuminance sensor 30 and the upper surface 4F of the board | substrate stage 4 were in the same plane (the same height), it is not limited to this, but it is not limited to this, and the illumination sensor The height may be different between the second surface 37B of the 30 and the upper surface 4F of the substrate stage 4. For example, when the thickness of the illuminance sensor 30 and the substrate P is different, when the illuminance sensor 30 is held by the substrate holder 4H, the upper surface 37 and the substrate stage 4 of the illuminance sensor 30 are held. The height is different at the upper surface 4F of. In addition, when the gap between the upper surface 37 of the illuminance sensor 30 and the upper surface 4F of the substrate stage 4 becomes extremely large, for example, the substrate holder 4H is configured to be microscopically movable in the Z-axis direction. The gap may be made small or set to zero.

In addition, in each embodiment mentioned above, although the support part 51 and the circumferential wall part 52 of the board | substrate holder 4H were made about the same height, it is not limited to this, For example, the height of the circumferential wall part 52 is referred to as the support part 51 It may be slightly lower than). In this case, you may provide the pin in which the front-end | tip is arrange | positioned in the same plane as the support part 51 (plural pin-shaped member). The substrate holder 4H has a plurality of fin-shaped members surrounded by one main wall portion 52. However, the substrate holder 4H is not limited to this. For example, the substrate holder 4H is divided into a plurality of blocks by placing the mounting surface of the substrate holder 4H into a plurality of blocks. Each of the plurality of pin-shaped members may be surrounded by a main wall portion. The substrate holder 4H is a pin chuck type. However, the substrate holder 4H is not limited thereto, and may be a holder having a plurality of concentric circular convex portions, for example. In addition, although not shown in each embodiment mentioned above, the pin member which can move to Z-axis direction, for example through the through-hole of the board | substrate holder 4H is provided in the board | substrate stage 4, and is conveyed by this pin member The substrate P and the illuminance sensor 30 are exchanged between the apparatus 8 and the substrate stage 4.

In addition, in each embodiment mentioned above, although the illuminance sensor 30 is provided so that attachment or detachment is possible with respect to the board | substrate holder 4H of the board | substrate stage 4, for example, the board | substrate holder of the upper surface 4F of the board | substrate stage 4 ( A dedicated mounting area may be provided in the vicinity of 4H) or the like, and the mounting area may be detachably attached to the mounting area. In this case, if the conveyance apparatus 8 can convey, for example, the illuminance sensor 30 may not have the same size, appearance, or the like as the substrate P.

In addition, in each embodiment mentioned above, although the external shape of the illuminance sensor 30 is substantially the same circular plate shape as the board | substrate P (wafer), For example, in the exposure apparatus which manufactures a liquid crystal display device, It may be formed in substantially the same shape, that is, rectangular plate shape.

In addition, in each embodiment mentioned above, although the illuminance sensor 30 has the substantially same external shape as a board | substrate (wafer), it is removable with respect to the board | substrate stage 4 (substrate holder 4H), and exposure light EL As long as information relating to the measurement can be measured, the shape may be different from that of the substrate (wafer). Similarly, the illuminance sensor 30 may have a different size from that of the substrate (wafer).

The illuminance sensor 30 may be configured to form a light receiving element (light receiving system) on the semiconductor wafer, for example, using a photolithography method. Further, the light receiving system may be detachably attached to the semiconductor wafer.

In each of the above-described embodiments, an illuminance sensor for measuring the illuminance of the exposure light EL has been described as an example as a measuring device for measuring information about the exposure light EL. Arbitrary structures, such as the nonuniformity sensor which measures the illumination intensity nonuniformity of exposure light EL, and the spatial image sensor which measures a spatial image (projection image), can be employ | adopted as a measurement apparatus.

In addition, although each said embodiment measures each position information of the mask stage 3 and the board | substrate stage 4 using the interferometer system 3L, 4L, it is not limited to this, For example, the scale provided in a stage An encoder system for detecting (diffraction grating) may be used. In this case, it is preferable to set it as a hybrid system having both an interferometer system and an encoder system, and to perform calibration (calibration) of the measurement results of the encoder system using the measurement results of the interferometer system. It is also possible to switch the interferometer system and the encoder system or to use both of them to control the stage position.

As mentioned above, the liquid LQ in each said embodiment is comprised with pure water. Pure water can be easily obtained in large quantities in semiconductor manufacturing plants and the like, and there is an advantage that there is no adverse effect on the photoresist on the substrate P, the optical element (lens), and the like. In addition, since pure water has no adverse effect on the environment and has a very low content of impurities, an effect of cleaning the surface of the optical element provided on the surface of the substrate P and the front end surface of the projection optical system PL can also be expected. .

The refractive index n of pure water (water) with respect to the exposure light EL having a wavelength of about 193 nm is approximately 1.44, and when ArF excimer laser light (wavelength 193 nm) is used as the light source of the exposure light EL, On the substrate P, the wavelength can be shortened to 1 / n, that is, about 134 nm to obtain high resolution. In addition, since the depth of focus is enlarged to about n times, i.e., about 1.44 times, in the air, when the depth of focus equal to that used in air can be secured, the numerical aperture of the projection optical system PL Can be increased, and the resolution is also improved in this respect.

Moreover, in each said embodiment, the optical element FL is attached to the front-end | tip of the projection optical system PL, and this optical element is used for the optical characteristic of the projection optical system PL, such as aberration (spherical aberration, coma aberration, etc.). Adjustment can be made. Moreover, as an optical element attached to the front-end | tip of projection optical system PL, the optical plate used for adjustment of the optical characteristic of projection optical system PL may be sufficient. Alternatively, a parallel plane plate (cover glass or the like) capable of transmitting the exposure light EL may be used.

In addition, when the pressure between the front end optical element of the projection optical system PL and the substrate P generated by the flow of the liquid LQ is large, the optical element is not replaceable, and the optical element It may be fixed firmly so as not to move.

In addition, in each said embodiment, although between the projection optical system PL and the surface of the board | substrate P is the structure filled with the liquid LQ, the state which attached the cover glass which consists of flat plates parallel to the surface of the board | substrate P, for example. The liquid LQ may be filled.

In addition, although the projection optical system of the above-mentioned embodiment fills the optical path space of the upper surface side of the optical element of the front end with liquid, the optical path space of the object surface side of the front optical element is also disclosed, as disclosed in the international publication 2004/019128 pamphlet. It is also possible to employ a projection optical system filled with a liquid.

In addition, although the liquid LQ of each said embodiment is water (pure water), liquid other than water may be sufficient. For example, when the light source of the exposure light EL is an F ₂ laser, since the F ₂ laser light does not penetrate water, the liquid LQ can transmit F ₂ laser light, for example, a perfluorinated polyether ( Fluorine-based fluids such as PFPE) or fluorine-based oils. In this case, the part which contacts the liquid LQ is lyophilic-treated by forming a thin film by the substance of the molecular structure with small polarity containing fluorine, for example. In addition, the liquid LQ is transmissive to the exposure light EL in addition to the refractive index as high as possible and stable to the photoresist applied to the projection optical system PL and the surface of the substrate P (for example, Cedarwood oil).

As the liquid LQ, a refractive index of about 1.6 to 1.8 may be used. The optical element FL may be formed of a material having a refractive index higher than that of quartz or fluorite (eg, 1.6 or more). As the liquid LQ, it is also possible to use various liquids, such as supercritical fluids.

As the substrate P of each of the above embodiments, not only semiconductor wafers for semiconductor device manufacturing but also glass substrates for display devices, ceramic wafers for thin film magnetic heads, or discs for masks or reticles used in exposure apparatuses (synthetic quartz, silicon wafers), etc. This applies.

As the exposure apparatus EX, in addition to the scanning exposure apparatus (scanning stepper) of the step-and-scan method of scanning and exposing the pattern of the mask M by synchronously moving the mask M and the substrate P, the mask M And the pattern of the mask M are collectively exposed in the state which stopped the board | substrate P, and it is applicable also to the projection exposure apparatus (stepper) of the step and repeat system which moves a board | substrate P step by step.

In addition, as the exposure apparatus EX, the first optical pattern and the substrate P are substantially stopped, and the reduced image of the first pattern is projected by an optical system (for example, a refractive projection optical system which does not include a reflective element at a 1/8 reduction magnification). It can apply also to the exposure apparatus of the system which package-exposes on the board | substrate P using the following. In this case, further, after that, in a state where the second pattern and the substrate P are substantially stopped, the reduced image of the second pattern is partially overlapped with the first pattern using the projection optical system and collectively placed on the substrate P. The present invention can also be applied to a batch exposure apparatus of a stitch method to be exposed. Moreover, as a stitch type exposure apparatus, it is applicable also to the exposure apparatus of the step and stitch system which partially transfers at least 2 pattern on the board | substrate P, and transfers the board | substrate P sequentially.

In addition, in each said embodiment, although the exposure apparatus provided with the projection optical system PL was demonstrated as an example, this invention is applicable to the exposure apparatus and exposure method which do not use the projection optical system PL. Even when the projection optical system is not used, the exposure light is irradiated onto the substrate through an optical member such as a mask or a lens, and a liquid immersion region is formed in a predetermined space between the optical member and the substrate.

Further, the present invention is, for example, Japanese Patent Laid-Open No. 10-163099 and Japanese Patent Laid-Open No. 10-214783 (corresponding US Patent No. 6,590,634) and Japanese Patent Laid-Open No. 2000-505958 (corresponding US patent) 5,969,441), US Patent No. 6,208,407 and the like can also be applied to a twin stage type exposure apparatus having a plurality of substrate stages.

Further, as disclosed in, for example, Japanese Patent Application Laid-Open No. 11-135400 (corresponding international publication 1999/23692) or Japanese Patent Publication No. 2000-164504 (corresponding US Patent No. 6,897,963), The present invention can also be applied to an exposure apparatus including a substrate stage, a reference member on which a reference mark is formed, and / or a measurement stage on which various photoelectric sensors are mounted.

Moreover, in the above-mentioned embodiment, although the exposure apparatus which fills a liquid locally between projection optical system PL and board | substrate P is employ | adopted, this invention is a Japanese Unexamined-Japanese-Patent No. 6-124873, Japan, for example. It is also applicable to the liquid immersion exposure apparatus which performs exposure in the state in which the whole surface of the board | substrate to be exposed disclosed in Unexamined-Japanese-Patent No. 10-303114, US Patent 5,825,043, etc. is submerged in liquid.

As the kind of exposure apparatus EX, it is not limited to the exposure apparatus for semiconductor element manufacture which exposes a semiconductor element pattern to the board | substrate P, The exposure apparatus for liquid crystal display element manufacture or display manufacture, a thin film magnetic head, an imaging element (CCD), It can be widely applied to an exposure apparatus for manufacturing a micro machine, MEMS, DNA chip or a reticle or mask.

In addition, in the above-mentioned embodiment, although the light transmissive mask which formed the predetermined light shielding pattern (or phase pattern and photosensitive pattern) was used on the light transmissive board | substrate, it is disclosed by US Patent No. 6,778,257 instead of this mask, for example. As can be seen, an electronic mask (also called a variable shaping mask) which forms a transmission pattern, a reflection pattern or a light emission pattern based on the electronic data of the pattern to be exposed, for example, a DMD, which is a kind of non-light-emitting image display element (spatial light modulator) (Digital Micro-mirror Device) etc.] may be used.

In addition, as disclosed in, for example, International Publication No. 2001/035168 pamphlet, by forming an interference fringe on the substrate P, an exposure apparatus (lithography which exposes a line and space pattern on the substrate P) The present invention can also be applied to systems.

Further, as disclosed in, for example, Japanese Patent Publication No. 2004-519850 (corresponding US Patent No. 6,611,316), two mask patterns are synthesized on a substrate through a projection optical system, and one on the substrate by one scan exposure. The present invention can also be applied to an exposure apparatus that performs a double exposure of a shot region at approximately the same time.

In addition, all publications concerning the exposure apparatus etc. which were quoted in each said embodiment and the modification, and the indication of a US patent are used as a part of this description as long as it is permitted by the law of the country appointed or selected by this international application.

As described above, the exposure apparatus EX of the embodiment of the present application is manufactured by assembling various subsystems including each component contained in the claims of the present application so as to maintain a predetermined mechanical precision, electrical precision, and optical precision. In order to secure these various precisions, adjustments for achieving optical precision for various optical systems, adjustments for achieving mechanical precision for various mechanical systems, and adjustments for achieving electrical precision for various electric systems before and after this assembly are performed. This is done. The assembling process from various subsystems to the exposure apparatus includes mechanical connection of various subsystems, wiring connection of electric circuits, piping connection of air pressure circuits, and the like. As a matter of course, there is an assembling step for each subsystem before the assembling step from these various subsystems to the exposure apparatus. When the assembly process to the exposure apparatus of various subsystems is complete | finished, comprehensive adjustment is performed and the various precision as the whole exposure apparatus is ensured. In addition, it is preferable to manufacture an exposure apparatus in the clean room in which temperature, a clean degree, etc. were managed.

As shown in Fig. 9, a micro device such as a semiconductor device includes a step 201 for performing a function and performance design of a micro device, a step 202 for producing a mask (reticle) based on the design step, and a substrate as a substrate of the device. Substrate treatment such as manufacturing step 203, exposing the pattern of the mask to the substrate by the exposure apparatus EX of the above-described embodiment, developing the exposed substrate, heating (curing) and etching the developed substrate A process 204 including a process, a device assembly step (including processing processes such as a dicing process, a bonding process, a package process) 205, an inspection step 206, and the like.

According to the present invention, the information on the exposure light in the liquid immersion exposure apparatus can be measured smoothly, and the exposure process can be performed with high accuracy. As such, the present invention is very useful for exposure methods and apparatus for manufacturing a wide range of products such as semiconductor devices, liquid crystal display devices or displays, thin film magnetic heads, CCDs, micro machines, MEMS, DNA chips, reticles (masks), for example. .

Claims (32)

As a measuring device for measuring information about exposure light, And a light receiving system that is detachable with respect to a substrate stage holding the substrate to which the exposure light is irradiated through a liquid, and receives the exposure light through the liquid in a state held by the substrate stage. The measuring device according to claim 1, wherein the light receiving system is detachable from a substrate holder for holding the substrate provided on the substrate stage. The measuring device according to claim 1 or 2, wherein the light receiving system has approximately the same appearance as the substrate. The measuring device according to any one of claims 1 to 3, wherein the light receiving system includes a region having liquid repellency with respect to the liquid. The measuring device according to any one of claims 1 to 4, wherein the light receiving system includes a transmission member through which the exposure light passes, and a light receiver receiving the exposure light through the transmission member. The measuring device according to claim 5, wherein a liquid immersion region is formed on an upper surface of the transmission member. The measuring device according to claim 5 or 6, wherein the light receiving system has a base material that holds the transmitting member and includes an inner space in which the light receiving device is disposed. The light receiving system according to any one of claims 1 to 7, wherein the light receiving system includes a first surface on which the liquid is disposed, and a second surface disposed outside the first surface and having liquid repellency. Measuring device. The measuring device of claim 8, wherein the first surface and the second surface are approximately coplanar. The measuring device according to claim 8, wherein a step is provided between the first surface and the second surface. The measuring device according to any one of claims 1 to 10, further comprising a holding device for holding a light receiving result of the light receiving system. The measuring device according to any one of claims 1 to 11, further comprising a transmitting device for wirelessly transmitting a light receiving result of the light receiving system. The measuring device according to any one of claims 1 to 12, wherein illuminance of the exposure light is measured. In the exposure apparatus which exposes a board | substrate with exposure light through a liquid, The exposure apparatus provided with the movable body which detachably holds the measuring apparatus in any one of Claims 1-13. An exposure apparatus for exposing a substrate through a liquid, A substrate stage for holding the substrate, It is provided with the measuring device which measures the information regarding exposure light, And the measuring device is detachable with respect to the substrate stage, and includes a light receiving system that receives the exposure light through the liquid in a state held by the substrate stage. The exposure apparatus according to claim 15, further comprising a conveying device for conveying the light receiving system with respect to the substrate stage. The exposure apparatus according to claim 15 or 16, further comprising a liquid immersion mechanism for forming a liquid immersion region on one surface of the light receiving system. 18. An exposure apparatus according to claim 17, wherein the liquid immersion mechanism starts a supply operation of a liquid for forming the liquid immersion region on the one surface of the light receiver. The exposure apparatus according to claim 17 or 18, wherein the supply and recovery of the liquid in the liquid immersion mechanism are performed in parallel with the measurement of the exposure light in the measurement apparatus. 20. The substrate stage according to any one of claims 15 to 19, wherein the substrate stage is disposed outside the light receiving system and is approximately coplanar with a surface on which the liquid in the light receiver is disposed or a surface outside thereof. An exposure apparatus comprising a third surface. 21. The exposure apparatus according to any one of claims 15 to 20, wherein the substrate stage includes an inner side facing the side of the light receiving system and having a predetermined gap formed between the side of the light receiving system. The device manufacturing method using the exposure apparatus as described in any one of Claims 14-21. A wafer type sensor used in an exposure apparatus that exposes a wafer through a liquid, A light transmitting portion through which exposure light having a wavelength of 200 nm or less is transmitted; And a light receiving unit through which the exposure light is incident through the liquid and the light transmitting unit. 24. The wafer type sensor according to claim 23, wherein a protective film is formed on one surface of the light transmitting portion. 25. The wafer type sensor according to claim 24, wherein the protective film covers the light transmitting portion. The wafer type sensor according to claim 24 or 25, wherein the protective film has liquid repellency with respect to the liquid. The wafer-type sensor according to any one of claims 23 to 25, wherein one surface on which the light transmitting portion is installed has liquid repellency with respect to the liquid. 28. The wafer-type sensor of claim 27, wherein an outer region of the light transmitting part of the one surface has liquid repellency. 29. The wafer-type sensor according to any one of claims 23 to 28, wherein the light receiving portion is disposed in an inner space of the substrate on which the light transmitting portion is installed. 30. The wafer type sensor according to any one of claims 23 to 29, comprising a transmitting unit for wirelessly transmitting a light receiving result of the exposure light by the light receiving unit. An exposure method for exposing a wafer through a liquid, A wafer type sensor according to any one of claims 23 to 30 is held on a wafer stage, The exposure light is received by the wafer stage through a liquid and a light transmitting portion between the wafer-type sensor and the optical member which are disposed to face an optical member through which exposure light having a wavelength of 200 nm or less is transmitted. I measure information, After the measurement, the wafer is held at the wafer stage instead of the wafer-type sensor, An exposure method for exposing a wafer with the exposure light through the liquid. A device manufacturing method using the exposure method according to claim 31.

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