KR20070050208A - Display Device and Thin Film Transistor Display Panel - Google Patents

Abstract

The present invention relates to a display device, wherein the display device includes a plurality of pixels, a plurality of image data lines for transmitting an image data signal to the pixels, a plurality of image scanning lines for transmitting an image scan signal to the pixels, and a plurality of sensings. A plurality of sensing signals connected to the sensing data lines, the sensing data lines being connected to the sensing data lines and generating one output signal based on the sensing data signals flowing through the sensing data lines. An output means. As a result, a sensing signal having a constant magnitude is output regardless of the distance between the touch position of the finger and the sensing signal output means, thereby reducing the sensitivity deviation of the sensing unit according to the touch position of the sensing unit.

Display device, touch sensor, sensor, pressure sensor, variable capacitor, photo sensor, sensitivity, deviation, wiring resistance

Description

DISPLAY DEVICE AND THIN FILM TRANSISTOR ARRAY PANEL}

1 is a block diagram of a liquid crystal display according to an exemplary embodiment of the present invention, which is a block diagram of the liquid crystal display shown in terms of a pixel.

2 is an equivalent circuit diagram of one pixel of a liquid crystal display according to an exemplary embodiment of the present invention.

3 is a block diagram of a liquid crystal display according to an exemplary embodiment of the present invention, and is a block diagram of the liquid crystal display shown in terms of a sensing unit.

4 is an equivalent circuit diagram of a sensing unit of a liquid crystal display according to an exemplary embodiment of the present invention.

5 is a schematic diagram of a liquid crystal display according to an exemplary embodiment of the present invention.

6 is an equivalent circuit diagram of a plurality of sensing units connected to one sensing data line in a liquid crystal display according to an exemplary embodiment of the present invention.

7 is a timing diagram for a sensing operation of a liquid crystal display according to an exemplary embodiment of the present invention.

8 is an equivalent circuit diagram of a plurality of sensing units connected to one sensing data line in a liquid crystal display according to another exemplary embodiment of the present invention.

9 is a diagram illustrating an example of a layout view of a thin film transistor array panel for a liquid crystal display according to another exemplary embodiment of the present invention.

FIG. 10 is a cross-sectional view of the thin film transistor array panel for the liquid crystal display of FIG. 9 taken along the line X-X.

FIG. 11 is a cross-sectional view of the thin film transistor array panel for the liquid crystal display of FIG. 9 taken along the line XI-XI. FIG.

FIG. 12 is a diagram illustrating another example of a layout view of a thin film transistor array panel for a liquid crystal display according to another exemplary embodiment of the present invention.

FIG. 13 is a cross-sectional view of the thin film transistor array panel for the liquid crystal display of FIG. 9 taken along the line XII-XII.

FIG. 14 is a waveform diagram of a sensing signal output from the liquid crystal display shown in FIG. 6.

The present invention relates to a display device and a thin film transistor array panel.

Typical liquid crystal displays (LCDs) among display devices include two display panels provided with pixel electrodes and a common electrode, and a liquid crystal layer having dielectric anisotropy interposed therebetween. The pixel electrodes are arranged in a matrix and connected to switching elements such as thin film transistors (TFTs) to receive data voltages one by one in sequence. The common electrode is formed over the entire surface of the display panel and receives a common voltage. The pixel electrode, the common electrode, and the liquid crystal layer therebetween form a liquid crystal capacitor, and the liquid crystal capacitor becomes a basic unit that forms a pixel together with a switching element connected thereto.

In such a liquid crystal display, a voltage is applied to two electrodes to generate an electric field in the liquid crystal layer, and the intensity of the electric field is adjusted to adjust the transmittance of light passing through the liquid crystal layer to obtain a desired image.

Therefore, in order to solve these problems, a technology for embedding a sensing element made of a thin film transistor or a variable capacitor instead of a touch screen panel in a display area displaying an image in a liquid crystal display device has been developed. The sensing element detects a change in light or pressure applied to a screen by a user's finger or the like so that the liquid crystal display may determine whether the user's finger or the like has touched the screen and contact position information.

A touch screen panel is a device that touches a finger or a touch pen (stylus) on the screen to write and draw letters or pictures, or execute icons to perform a desired command on a machine such as a computer. . A liquid crystal display with a touch screen panel may find out whether a user's finger or a touch pen touches the screen and contact position information. However, such a liquid crystal display device has problems such as a cost increase due to a touch screen panel, a decrease in yield due to a process of adhering the touch screen panel to a liquid crystal display panel, a decrease in luminance of the liquid crystal panel, and an increase in product thickness.

Accordingly, an object of the present invention is to provide a liquid crystal display device that detects whether a screen is touched and contact position information without attaching a separate touch screen panel.

Another object of the present invention is to improve the sensitivity characteristic of the sensing device.

According to an exemplary embodiment of the present invention, a display device includes a plurality of pixels, a plurality of image data lines for transmitting an image data signal to the pixels, and a plurality of image scanning lines for transmitting an image scan signal to the pixels. A plurality of sensing units, one sensing data line connected to the plurality of sensing units, and one sensing data line connected to the sensing data line and generating one output signal based on a sensing data signal flowing through the sensing data line. A plurality of sensing signal output means.

Preferably, the plurality of sensing signal output means is provided for every n sensing units.

N may be 1.

Each sensing signal output means may include a control terminal to which the sensing data line is connected.

The display device according to the above feature may further include a sensing signal processor configured to receive the output signal and generate a sensing signal based on the output signal.

The sensing signal output means may further include an output terminal connected to the branch signal processing unit for outputting the output signal and an input terminal for receiving an input voltage having a predetermined magnitude.

Each sensing signal output means may be a thin film transistor.

The display device may further include a reset signal input unit connected to the sensing data line and supplied with a reset voltage to supply the sensing data line.

According to another aspect of the present invention, a thin film transistor array panel includes an image scanning line and a gate electrode having a control electrode formed on a substrate, a first insulating film formed on the image scanning line and a gate electrode, and a first insulating film formed on the first insulating film. First and second semiconductors, the image data lines formed on the first and second semiconductors and the exposed first insulating film, the output electrodes, the input wirings and the output wirings, the output image data lines, the input wirings and the output wirings. A second insulating film having a first and a second contact hole formed to expose a part of the output electrode and a part of the gate electrode, respectively, and a drain electrode formed on the second insulating film and through the first contact hole. And a pixel electrode formed on the pixel electrode and the second insulating layer, and through the second contact hole. It includes a sensing data line that is connected to the bit electrode.

The input line and the output line may be formed to face the image data line around the pixel electrode.

It is preferable that the said input wiring isolate | separates the said output wiring, and is formed in parallel with the said output wiring.

The output wiring may include a bent portion, and the bent portion is preferably formed near the second contact hole.

Preferably, the first semiconductor is formed under the image data line and the output electrode, and the second semiconductor is formed under the input wiring and the output wiring.

The sensing data line may be made of a reflective metal or a transparent conductive material.

The sensing data line may be formed together with the pixel electrode.

According to still another aspect of the present invention, a thin film transistor array panel includes an image scanning line having a control electrode formed on a substrate, a gate electrode and a reference voltage line, a first insulating layer formed on the image scanning line, a gate electrode, and a reference voltage line. First and second semiconductors formed on a first insulating film, image data lines, output electrodes, input wirings and output wirings, and sensing data lines formed on the first and second semiconductors and the exposed first insulating film; First, second, and third electrodes formed on an output image data line, the input wiring and the output wiring, and the sensing data line and exposing a part of the output electrode, a part of the sensing data line, and a part of the gate electrode, respectively; A second insulating film having a contact hole, and is formed on the second insulating film and through the first contact hole; It is connected to the electrode and the pixel electrode, and a connection member connecting the second is formed on the insulating film, the second and the sensing data line and the gate electrode through the third contact hole.

The input line and the output line may be formed to face the image data line around the pixel electrode.

It is preferable that the input wiring is separated from the output wiring and formed in parallel with the output wiring.

The sensing data line is formed to face the input line and the output line around the pixel electrode, and is formed to be parallel to the image data line.

Preferably, the first semiconductor layer is formed under the image data line and the output electrode, and the second semiconductor layer is formed under the input wiring and the output wiring.

The connection member may be formed on the same layer as the pixel electrode.

DETAILED DESCRIPTION Embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a part of a layer, film, region, plate, etc. is said to be "on" another part, this includes not only the other part being "right over" but also another part in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.

A liquid crystal display, which is an embodiment of a display device according to the present invention, will now be described in detail with reference to FIGS. 1 to 5.

1 is a block diagram of a liquid crystal display according to an exemplary embodiment of the present invention, which is a block diagram of a liquid crystal display according to a pixel, and FIG. 2 is a pixel of the liquid crystal display according to the exemplary embodiment of the present invention. Equivalent circuit diagram. 3 is a block diagram of a liquid crystal display according to an exemplary embodiment of the present invention, which is a block diagram of the liquid crystal display according to a sensing unit, and FIG. 4 is a sensing diagram of the liquid crystal display according to the exemplary embodiment of the present invention. Equivalent circuit diagram for negative. 5 is a schematic diagram of a liquid crystal display according to an exemplary embodiment of the present invention.

1 and 3, a liquid crystal display according to an exemplary embodiment of the present invention may include a liquid crystal panel assembly 300, an image scanning unit 400, an image data driver 500, and a liquid crystal panel assembly 300 connected thereto. A sensing signal processor 800, a gray voltage generator 550 connected to the image data driver 500, a contact determiner 700 connected to the sensing signal processor 800, and a signal controller 600 for controlling them. .

1 to 4, the liquid crystal panel assembly 300 includes a plurality of display signal lines G ₁ -G _n , D ₁ -D _m , and a plurality of pixels PX connected thereto and arranged in a substantially matrix form. ), and a plurality of sensing signal lines _{(SY 1 -SY N, SX 1} -SX M, RL) and is connected thereto, and a plurality are arranged in the form of a substantially matrix sensor (SU), each of the sensing signal (SY ₁ -SY _N , SX ₁ -SX _M ) A plurality of initial signal inputs (INI) connected to one end, a plurality of sensing signal outputs connected to the other end of each sensing signal line (SY ₁ -SY _N , SX ₁ -SX _M ) ( SOUT), and a plurality of output data lines _{(OY 1 -OY N, OX 1} -OX M) connected to each of the sensing signal output (SOUT).

2 and 5, the liquid crystal panel assembly 300 includes a thin film transistor array panel 100 and a common electrode panel 200 facing each other, a liquid crystal layer 3 interposed therebetween, and two display panels. Spacer (not shown) which forms a gap between 100 and 200 and which is deformed to some extent is included.

The display signal lines G ₁ -G _n and D ₁ -D _m are a plurality of image scanning lines G ₁ -G _n for transmitting an image scanning signal and an image data line D ₁ -D _m for transmitting an image data signal. sensing a signal line, comprising a _{(SY 1 -SY N, SX 1} -SX M, RL) includes a plurality of horizontal sensing data lines for transmitting the detected data signal (SY ₁ -SY _N) and a plurality of vertical sensing data line (SX ₁ -SX _M ) and a plurality of reference voltage lines RL for transmitting a reference voltage. The reference voltage line RL may be omitted as necessary.

The image scanning lines G ₁ -G _n and the horizontal sensing data lines SY ₁ -SY _N extend substantially in the row direction and are substantially parallel to each other, and the image data lines D ₁ -D _m and the vertical sensing data lines ( SX ₁ -SX _M ) extend in approximately the column direction and are substantially parallel to each other. The reference voltage line RL extends in the row or column direction.

Each pixel PX includes a switching element Q connected to the display signal lines G ₁ -G _n , D ₁ -D _m , a liquid crystal capacitor Clc, and a storage capacitor Cst connected thereto. ). Holding capacitor Cst can be omitted as needed.

The switching element Q is a three-terminal element such as a thin film transistor provided in the thin film transistor array panel 100, the control terminal of which is connected to the image scanning line G ₁ -G _n , and the input terminal of the thin film transistor display panel 100. D ₁ -D _m ), and the output terminal is connected to the liquid crystal capacitor Clc and the storage capacitor Cst. In this case, the thin film transistor includes amorphous silicon or poly crystalline silicon.

The liquid crystal capacitor Clc has two terminals, the pixel electrode 191 of the thin film transistor array panel 100 and the common electrode 270 of the common electrode display panel 200, and the liquid crystal layer 3 between the two electrodes 191 and 270. Functions as a dielectric. The pixel electrode 191 is connected to the switching element Q, and the common electrode 270 is formed on the entire surface of the common electrode display panel 200 and receives the common voltage Vcom. Unlike in FIG. 2, the common electrode 270 may be provided in the thin film transistor array panel 100. In this case, at least one of the two electrodes 191 and 270 may be linear or rod-shaped.

The storage capacitor Cst, which serves as an auxiliary role of the liquid crystal capacitor Clc, is formed by overlapping a separate signal line (not shown) and the pixel electrode 191 provided in the thin film transistor array panel 100 with an insulator therebetween. A predetermined voltage such as the common voltage Vcom is applied to this separate signal line. However, the storage capacitor Cst may be formed such that the pixel electrode 191 overlaps the front end image scanning line directly above the insulator.

On the other hand, in order to implement color display, each pixel PX uniquely displays one of the primary colors (spatial division) or each pixel PX alternately displays the primary colors over time (time division). The desired color is recognized by the spatial and temporal sum of these primary colors. Examples of the primary colors include three primary colors such as red, green, and blue. FIG. 2 illustrates that each pixel PX includes a color filter 230 representing one of the primary colors in an area of the common electrode display panel 200 corresponding to the pixel electrode 191 as an example of spatial division. . Unlike FIG. 2, the color filter 230 may be formed above or below the pixel electrode 191 of the thin film transistor array panel 100.

At least one polarizer (not shown) for polarizing light is attached to an outer surface of the liquid crystal panel assembly 300.

As illustrated in FIG. 4, the sensing unit SU is connected to a variable capacitor Cv and a sensing data line SL connected to a horizontal or vertical sensing data line (hereinafter, referred to as a sensing data line) indicated by a reference numeral SL. And a reference capacitor Cp connected between the voltage lines RL.

The reference capacitor Cp is formed by overlapping the reference voltage line RL and the sensing data line SL of the thin film transistor array panel 100 with an insulator (not shown) interposed therebetween.

The variable capacitor Cv has the sensing data line SL of the thin film transistor array panel 100 and the common electrode 270 of the common electrode display panel 200 as two terminals, and the liquid crystal layer 3 between the two terminals is a dielectric material. Function. The capacitance of the variable capacitor Cv is changed by an external stimulus such as a user's touch applied to the liquid crystal panel assembly 300. For example, pressure may be used as the external stimulus. When pressure is applied to the common electrode display panel 200, the spacer is compressed and deformed so that the distance between the two terminals is changed to change the capacitance of the variable capacitor Cv. When the capacitance changes, the magnitude of the contact voltage Vn between the reference capacitor Cp and the variable capacitor Cv changes, which depends on the magnitude of the capacitance. The contact voltage Vn flows through the sensing data line SL as a sensing data signal, and based on the contact voltage Vn, the contact voltage Vn may be determined. In this case, the reference capacitor Cp has a fixed capacitance, and the reference voltage applied to the reference capacitor Cp has a constant voltage value, so that the contact voltage Vn varies in a certain range. Therefore, the sensing data signal may always have a voltage range within a certain range, thereby easily determining whether or not the contact is made.

The sensing unit SU is disposed between two adjacent pixels PX. The density of the horizontal and vertical sensing data line _{(SY 1 -SY N, SX 1} -SX M) of a pair of sensing unit (SU) which is connected, respectively, disposed adjacent to the region in which they cross in, for example, It may be about one quarter of the dot density. Here, one dot includes, for example, three pixels PX arranged side by side and displaying three primary colors such as red, green, and blue, displaying one color, and a basic unit representing the resolution of the liquid crystal display device. do. However, one dot may consist of four or more pixels PX, and in this case, each pixel PX may display one of three primary colors and white.

An example in which the density of the pair of sensing units SU is 1/4 of the dot density is one in which the horizontal and vertical resolutions of the pair of sensing units SU are 1/2 of the horizontal and vertical resolutions of the liquid crystal display device, respectively. Can be. In this case, there may be a pixel row and a pixel column without the sensing unit SU.

By matching the detection unit SU density and the dot density to such an extent, the liquid crystal display device may be applied to high precision applications such as character recognition. Of course, the resolution of the sensing unit SU may be higher or lower as necessary.

As described above, according to the sensing unit SU according to the exemplary embodiment of the present invention, since the space occupied by the sensing unit SU and the sensing data line SL is relatively small, the reduction of the aperture ratio of the pixel PX can be minimized.

The plurality of reset signal input units INI have the same structure, and the plurality of detection signal output units SOUT also have the same structure. The structure and operation of these (INI, SOUT) will be described in more detail later.

The output data lines OY ₁ -OY _N and OX ₁ -OX _M are connected to the horizontal and vertical sensing data lines SY ₁ -SY _N and SX ₁ -SX _M , respectively, through corresponding sensing signal outputs SOUT. a plurality of horizontal and vertical output data lines, which comprises _{(OY 1 -OY N, OX 1} -OX M). The output data lines OY ₁ -OY _N and OX ₁ -OX _M are connected to the sensing signal processing unit 800 and transmit an output signal from the sensing signal output unit SOUT to the sensing signal processing unit 800. The horizontal and vertical output data lines (OY ₁ -OY _N , OX ₁ -OX _M ) extend approximately in the column direction and are nearly parallel to each other.

Referring back to FIGS. 1 and 3, the gray voltage generator 550 generates two sets of gray voltage sets (or reference gray voltage sets) related to the transmittance of the pixel. One of the two sets has a positive value for the common voltage Vcom and the other set has a negative value.

The image scanning unit 400 is connected to the image scanning lines G ₁ -G _n of the liquid crystal panel assembly 300 to gate-on voltage Von for turning on the switching element Q, and gate-off voltage Voff for turning off. ) Is applied to the image scanning lines G ₁ -G _n .

The image data driver 500 is connected to the image data lines D ₁ -D _m of the liquid crystal panel assembly 300, and selects a gray voltage from the gray voltage generator 550 and uses the image data as the image data signal. Applies to lines D ₁ -D _m . However, when the gray voltage generator 550 provides only a predetermined number of reference gray voltages instead of providing all voltages for all grays, the image data driver 500 divides the reference gray voltages so that the grays for all grays are divided. Generates a voltage and selects an image data signal among them.

The sensing signal processor 800 includes a plurality of amplifiers 810 connected to the output data lines OY ₁ -OY _N and OX ₁ -OX _M of the liquid crystal panel assembly 300. After receiving the output signal transmitted through 810 and performing signal processing such as amplification to generate an analog detection signal (Vo), and converts into a digital signal using an analog-to-digital converter (not shown), such as a digital detection signal ( DSN).

The touch determining unit 700 receives the digital sensing signal DSN from the sensing signal processing unit 800, performs a predetermined calculation process, determines whether the contact is made, and the contact position, and then sends the contact information INF to the external device. The touch determination unit 700 may monitor an operation state of the sensing unit SU based on the digital sensing signal DSN and control signals applied to the sensing unit SU.

The signal controller 600 controls operations of the image scanning unit 400, the image data driver 500, the gray voltage generator 550, and the detection signal processor 800.

Each of the driving devices 400, 500, 550, 600, 700, and 800 may be mounted directly on the liquid crystal panel assembly 300 in the form of at least one integrated circuit chip, or may be a flexible printed circuit film ( It may be mounted on the liquid crystal panel assembly 300 in the form of a tape carrier package (TCP) or mounted on a separate printed circuit board (not shown). In contrast, these drive devices 400, 500, 550, 600, 700, 800 are connected to signal lines G ₁ -G _n , D ₁ -D _m , SY ₁ -SY _N , SX ₁ -SX _M , OY ₁ -OY _N , OX ₁ -OX _M , RL) and the thin film transistor Q may be integrated in the liquid crystal panel assembly 300.

Referring to FIG. 5, the liquid crystal panel assembly 300 is divided into a display area P1, an edge area P2, and an exposure area P3. In the display area P1, the pixel PX, the sensing unit SU, and the signal lines G ₁ -G _n , D ₁ -D _m , SY ₁ -SY _N , SX ₁ -SX _M , OY ₁ -OY _N , OX Most of _1- OX _M , RL) are located. The common electrode panel 200 includes a light blocking member (not shown) such as a black matrix, and the light blocking member covers most of the edge region P2 to block light from the outside. Since the common electrode panel 200 is smaller than the thin film transistor array panel 100, a portion of the thin film transistor array panel 100 is exposed to form an exposed area P3, and a single chip 610 is mounted in the exposed area P3. A flexible printed circuit board 620 is attached.

The single chip 610 is a driving device for driving a liquid crystal display, that is, an image driver 400, an image data driver 500, a gray voltage generator 550, a signal controller 600, and a contact determiner ( 700, and a sensing signal processor 800. By integrating the driving devices 400, 500, 550, 600, 700, and 800 in a single chip 610, the mounting area may be reduced, and power consumption may be reduced. Of course, if desired, at least one of them or at least one circuit element constituting them may be outside the single chip 610.

The image signal lines G ₁ -G _n , D ₁ -D _m and the sensing data lines SY ₁ -SY _N , SX ₁ -SX _M extend to the exposure area P3 so that the corresponding driving devices 400, 500, 800 ).

The FPC board 620 receives a signal from an external device and transmits the signal to a single chip 610 or the liquid crystal panel assembly 300, and an end is usually formed of a connector (not shown) to facilitate connection with the external device. .

Next, the display operation and the detection operation of the liquid crystal display will be described in more detail.

The signal controller 600 receives input image signals R, G, and B and an input control signal for controlling the display thereof from an external device (not shown). The input video signals R, G, and B contain luminance information of each pixel PX, and the luminance is a predetermined number, for example, 1024 (= 2 ¹⁰ ), 256 (= 2 ⁸ ), or 64 (= 2 ⁶ ) It has gray. Examples of the input control signal include a vertical sync signal Vsync, a horizontal sync signal Hsync, a main clock MCLK, and a data enable signal DE.

The signal controller 600 receives the input image signals R, G, and B based on the input image signals R, G, and B and the input control signal, and generates operating conditions of the liquid crystal panel assembly 300 and the image data driver 500. Process the image scan control signal CONT1, the image data control signal CONT2, the sensing data control signal CONT3, and the like, and then output the image scan control signal CONT1 to the image scan unit 400. The image data control signal CONT2 and the processed image signal DAT are sent to the image data driver 500, and the sensing data control signal CONT3 is sent to the detection signal processor 800.

The image scan control signal CONT1 includes a scan start signal STV indicating the start of scanning and at least one clock signal controlling the output of the gate-on voltage Von. The image scan control signal CONT1 may further include an output enable signal OE that defines a duration of the gate-on voltage Von.

The image data control signal CONT2 is a load signal for applying the image data signal to the horizontal synchronization start signal STH indicating the start of transmission of the image data DAT in one pixel row and the image data lines D ₁ -D _m . LOAD) and data clock signal HCLK. The image data control signal CONT2 is also an inversion signal for inverting the voltage polarity of the image data signal with respect to the common voltage Vcom (hereinafter referred to as the polarity of the image data signal by reducing the voltage polarity of the image data signal with respect to the common voltage). RVS) may be further included.

In response to the image data control signal CONT2 from the signal controller 600, the image data driver 500 receives the digital image signal DAT for the pixel PX of one pixel row, and each digital image signal DAT. By converting the digital image signal DAT into an analog image data signal by selecting a gray scale voltage corresponding to), it is applied to the corresponding image data lines D ₁ -D _m .

The image scanning unit 400 applies the gate-on voltage Von to the image scanning line G ₁ -G _n in response to the image scanning control signal CONT1 from the signal controller 600, thereby applying the image scanning line G ₁ -G. _n ) turns on the switching element Q connected. Then, the image data signal applied to the image data lines D ₁ -D _m is applied to the pixel PX through the turned-on switching element Q.

The difference between the voltage of the image data signal applied to the pixel PX and the common voltage Vcom is shown as the charging voltage of the liquid crystal capacitor Clc, that is, the pixel voltage. The arrangement of the liquid crystal molecules varies according to the magnitude of the pixel voltage, thereby changing the polarization of light passing through the liquid crystal layer 3. The change in polarization is represented as a change in the transmittance of light by the polarizer attached to the liquid crystal panel assembly 300, and thus a desired image may be displayed.

Repeat this process in units of one horizontal period (also referred to as 1H "and equal to one period of the horizontal sync signal Hsync and the data enable signal DE) to thereby repeat all image scanning lines G ₁ -G _n . The image data signal is applied to all the pixels PX by sequentially applying the gate-on voltage Von to display an image of one frame.

When one frame ends, the next frame starts and the state of the inversion signal RVS applied to the image data driver 500 is controlled so that the polarity of the image data signal applied to each pixel PX is opposite to that of the previous frame. ("Frame inversion"). In this case, the polarity of the image data signal flowing through one image data line is changed (eg, inversion of a row, inversion of a point) according to the characteristics of the inversion signal RVS within one frame, or the polarity of the image data signal applied to one pixel row. May differ from one another (eg, nirvana, point inversion).

The sensing signal processing unit 800 is applied through the output data lines OY _1- OY _N and OX _1- OX _M in the porch section between the frames once every frame according to the sensing data control signal CONT3. The sensed data signal to be read. In the porch section, since the sensing data signal is less affected by the driving signals from the image scanning unit 400, the image data driver 500, and the like, the reliability of the sensing data signal is increased. However, such a read operation is not necessarily performed every frame, but may be performed once for a plurality of frames as necessary. More than one read operation may be performed in the porch section.

The sensing signal processor 800 converts the read analog sensing data signal into a digital sensing signal DSN by performing signal processing such as amplification using each amplifying unit 810, etc. send. The operation of the amplifier 810 of the sense signal processor 800 will be described in more detail below.

The touch determination unit 700 receives a digital sensing signal DSN, performs appropriate arithmetic processing to find out whether a contact is made and a contact position, and transmits the same to an external device, and the external device transmits the image signals R, G, and B based thereon. Transfer to the liquid crystal display device.

Next, the structure and operation of the reset signal input unit INI, the detection signal output unit SOUT, and the amplifier 810 according to an embodiment of the present invention will be described with reference to FIGS. 6 and 7.

6 is an equivalent circuit diagram of a plurality of sensing units connected to one sensing data line in a liquid crystal display according to an exemplary embodiment of the present invention, and FIG. 7 is a diagram illustrating a sensing operation of the liquid crystal display according to an exemplary embodiment of the present invention. Timing diagram.

As shown in FIG. 6, the liquid crystal panel assembly 300 of the present embodiment has a plurality of sensing data lines SL (SY ₁ -SY _N , SX ₁ -SX in FIG. 3), as described above with reference to FIG. 3. _M ) and a plurality of sensing units SU connected to each sensing data line SL, a reset signal input unit INI connected to one side of each sensing data line SL, and the other of each sensing data line SL. It includes a plurality of sense signal outputs (SOUT) connected between the side and each output data line (OL) (OY _1- OY _N , OX _1- OX _{M in} Figure 3). In addition, as described above with reference to FIG. 3, the sensing signal processor 800 includes a plurality of amplifiers 810 connected to each output data line OL.

That is, a plurality of sensing units SU including a variable capacitor Cv and a reference capacitor Cp are connected to one sensing data line SL, and reset signals input units are respectively provided at different ends of the sensing data line SL. (INI) and sense signal output (SOUT) are connected. The variable capacitor Cv is connected to the common voltage Vcom and the reference capacitor Cp is connected to the reference voltage Vp.

Each reset signal input unit INI includes a reset transistor Qr. The reset transistor Qr is a three-terminal element such as a thin film transistor, the control terminal of which is connected to the reset control signal RST, the input terminal of which is connected to the reset voltage Vr, and the output terminal of the sensing data line. It is connected to (SL).

The reset transistor Qr is positioned in the edge region P2 of the liquid crystal panel assembly 300 in which the pixel PX is not disposed and senses the reset voltage Vr according to the reset control signal RST. To feed.

Each sensing signal output unit SOUT includes an output transistor Qs. The output transistor Qs is also a three-terminal element such as a thin film transistor, the control terminal of which is connected to the sensing data line SL, the input terminal of which is connected to the input voltage Vs, and the output terminal of the output data line ( OL). The output transistor Qs is also positioned in the edge region P2 of the liquid crystal panel assembly 300 and generates an output signal based on the sensing data signal flowing through the sensing data line SL. An output current is mentioned as an output signal. Alternatively, the output transistor Qs may generate a voltage as an output signal.

Each amplifier 810 includes an amplifier AP, a capacitor Cf, and a switch SW.

The amplifier AP has an inverting terminal (-), a non-inverting terminal (+) and an output terminal, the inverting terminal (-) is connected to the output data line OL, and between the inverting terminal (-) and the output terminal The capacitor Cf and the switch SW are connected, and the non-inverting terminal + is connected to the reference voltage Va. The amplifier AP and the capacitor Cf generate a sense signal Vo by integrating the output current from the output transistor Qs for a predetermined time as a current integrator.

Referring to FIG. 7, the liquid crystal display according to the present exemplary embodiment performs a sensing operation in a porch section between frames as described above, and particularly, in a front porch section ahead of the vertical sync signal Vsync. It is desirable to perform the operation.

The common voltage Vcom has a high level and a low level and swings the high level and the low level every 1H.

The reset control signal RST has a turn-on voltage Ton for turning on the reset transistor Qr and a turn-off voltage Toff for turning off the reset transistor Qr, and the turn-on voltage Ton may use the gate-on voltage Von. In addition, the turn-off voltage Toff may use the gate-off voltage Voff. The turn-on voltage Ton of the reset control signal RST is applied when the common voltage Vcom is at a high level.

First, the sensing data line SL is initialized before reading the sensing signal Vo output from the amplifier 810. That is, when the turn-on voltage Ton of the reset control signal RST is applied to the control terminal of the reset transistor Qr, the reset transistor Qr is turned on to sense the reset voltage Vr applied to the input terminal. Is applied to the SL, and thus the sensing data line SL is initialized to the reset voltage Vr.

After 1H time, the reset control signal RST becomes a turn-off voltage and the common voltage Vcom becomes a low level. Then, the sensing data line SL is in a floating state and the output transistor Qs is controlled based on a change in capacitance of the variable capacitor Cv and a change in the common voltage Vcom according to whether the sensing unit SU is in contact. The voltage applied to the terminal changes. According to the voltage change, the current of the sensing data signal flowing through the output transistor Qs varies, and according to the sensing data signal, the output transistor Qs outputs a corresponding output signal to the amplifier 810 of the sensing signal processor 800. Export to

The amplifier 810 integrates the output signal of the output transistor Qs and outputs the sensed signal Vo. Before the sensing signal Vo is read by the sensing signal processor 800, a high level switching signal Vsw is applied to the switch SW to discharge a voltage charged in the capacitor Cf. As a result, the sensing signal Vo corresponding to the sensing data signal at the instant of the read operation is output. Then, when a predetermined time elapses, the sensing signal processor 800 reads the sensing signal Vo. At this time, it is preferable to set the reading time of the sensing signal Vo within 1H time after the reset control signal RST becomes the turn-off voltage Voff. That is, it is preferable to read the sensing signal Vo before the common voltage Vcom becomes high again. This is because the sensing signal Vo also changes as the level of the common voltage Vcom changes.

As described above, since the sensing data signal is changed based on the reset voltage Vr, the sensing data signal may always have a voltage range of a certain range, thereby easily determining whether or not the contact is made.

The turn-on voltage Ton of the reset control signal RST may be applied when the common voltage Vcom is at a low level. In this case, the sensing signal Vo is before the common voltage Vcom is changed to a high level and again becomes low. Read In addition, the reset control signal RST may be synchronized with an image scan signal applied to the last image scan line G _n .

Next, the structure and operation of the reset signal input unit INI, the detection signal output unit SOUT ', and the amplifier 810 according to another embodiment of the present invention will be described with reference to FIG. 8.

8 is an equivalent circuit diagram of a plurality of sensing units connected to one sensing data line in a liquid crystal display according to another exemplary embodiment of the present invention.

As shown in FIG. 8, the structure and operation of the reset signal input unit INI and the amplifier 810 except for the detection signal output unit SOUT 'are the same as those of the reset signal input unit and the amplifier shown in FIG. The same reference numerals have been given, and detailed description thereof will be omitted.

As illustrated in FIG. 8, the sensing signal output unit SOUT ′ includes a plurality of output transistors Qs ₁ -Qs _k , where k is a natural number, respectively, connected to the plurality of sensing units SU. .

The output transistors Qs ₁ -Qs _k are three-terminal elements such as thin film transistors, and their control terminals are common between the sensing data line SL of the corresponding sensing unit SU, that is, the variable capacitor Cv and the reference capacitor Cp. They are connected to terminals, respectively, and their input terminals are commonly connected to the input voltage Vs, and the output terminals are commonly connected to the output data line OL.

By such an output signal output unit SOUT ', the sensing data signal corresponding to each sensing unit SU is applied to the control terminals of the respective output transistors Qs _{1 to} Qs _k . Each output transistor Qs ₁ -Qs _k outputs a current having a corresponding magnitude in accordance with the magnitude of the sense data signal applied thereto. At this time, since the output terminals of all the output transistors Qs ₁ -Qs _k are all connected, one output signal obtained by adding up the output signals of each output transistor Qs ₁ -Qs _k to the amplifier 810 is applied. do.

As described above, the present invention is different from the invention of FIG. 6 in which one output transistor Qs is formed for each sensing data line SL to which the plurality of sensing units SU are connected. A plurality of output transistors Qs ₁ -Qs _k are connected to one connected sensing data line SL. In this case, the plurality of output transistors Qs ₁ -Qs _k are formed between two adjacent sensing units SU and are evenly distributed on the liquid crystal panel assembly 300. In FIG. 8, a plurality of output transistors Qs _{1 to} Qs _k are formed adjacent to each of the plurality of sensing units SU connected to the same sensing data line SL, and thus are connected to the same sensing data line SL. The number of the sub SU and the output transistors Qs ₁ -Qs _k is the same, but, alternatively, the number of the output transistors Qs ₁ -Qs _k may be smaller or greater than the number of the sensing units SU. In this case, the output transistors Qs ₁ -Qs _k are preferably evenly distributed on the liquid crystal panel assembly 300.

Next, a change in the sensing signal Vo according to the number of output transistors Qs and Qs ₁ -Qs _k connected to one sensing data line SL will be described with reference to FIG. 14.

FIG. 14 is a waveform diagram of a sensing signal output from the liquid crystal display shown in FIG. 6.

Like Fig. 8, the output transistor by increasing the number of formed (Qs ₁ -Qs _k), the output transistor (Qs ₁ -Qs _k) when the finger contacts the like near and far away from the output transistor (Qs ₁ -Qs _k) The sensitivity deviation of the signal generated when a finger or the like is touched is reduced. That is, in the structure shown in FIG. 6, the closer the contact of the finger or the like is to the output transistor Qs, the larger the magnitude of the output signal from the output transistor Qs and the larger the magnitude of the sensing signal Vo ( See FIG. 14). That is, when the contact operation is performed near the output transistor Qs, the sensitivity of the sensing unit SU differs significantly from the sensitivity of the sensing unit SU when the contact operation is performed at a part far from the output transistor Qs. Occurs. As described above, the change in the magnitude of the output signal according to the distance between the output transistor Qs and the contact position depends on the wiring resistance of the sensing data line SL or the like, or the capacitance of the variable capacitor Cv upon contact. And a channel portion change.

That is, the farther the contact position with the output transistor Qs increases, the wiring resistance increases, which adversely affects the signal applied to the control terminal of the output transistor Qs, thereby increasing the loss of the sensing signal. In addition, as the contact position with the output transistor Qs increases, the capacitance change of the variable accumulator Cv does not immediately affect the operation of the output transistor Qs and changes while following the sensing data line SL. A magnitude difference occurs between the sense data signal applied to the control terminal of the output transistor Qs and the sense data signal near the contact position.

However, as shown in FIG. 8, since the plurality of output transistors Qs ₁ -Qs _k are formed near each sensing unit SU, the wiring length between the sensing unit SU and the output transistors Qs ₁ -Qs _k is reduced. Therefore, the signal loss due to the wiring resistance is reduced, and the sensed data signal according to the capacitance change of the variable capacitor Cv is rapidly applied to the corresponding output transistors Qs ₁ -Qs _{k by the} reduced distance, thereby increasing the amplifier 810. Is applied. As a result, the magnitude difference between the sensing data signal applied to the control terminal of the actual output transistors Qs _{1 to} Qs _k and the sensing data signal near the contact point is reduced, so that the sensing signal ( Vo has a constant magnitude, i.e. a constant sensitivity, regardless of the distance between the output transistors Qs ₁ -Qs _k and the contact point. Thus, it can be seen that the liquid crystal display of FIG. 8 has improved sensitivity characteristics of the sensing unit SU when compared to FIG. 6.

Next, referring to FIGS. 9 to 13, the structure of the liquid crystal display according to another exemplary embodiment of the present invention including the sensing unit SU and the sensing signal output unit SOUT ′ illustrated in FIG. 8 is described in detail. Explain. 9 to 13 illustrate one pixel, one pixel in a liquid crystal display including a plurality of pixels PX, a plurality of sensing units SU, a plurality of output transistors Qs ₁ -Qs _k , and the like. Only the sensing unit and one output transistor formed near the sensing unit SU are shown.

9 is a diagram illustrating an example of a layout view of a thin film transistor array panel for a liquid crystal display according to another exemplary embodiment. FIG. 10 is a cross-sectional view of the thin film transistor array panel for liquid crystal display of FIG. 9 taken along line XX. 11 is a cross-sectional view of the thin film transistor array panel for the liquid crystal display of FIG. 9 taken along the line XI-XI. FIG. 12 is a diagram illustrating another example of a layout view of a thin film transistor array panel for a liquid crystal display according to another exemplary embodiment. FIG. 13 is a cross-sectional view of the thin film transistor array panel for liquid crystal display of FIG. 9 taken along line XII-XII. It is sectional drawing.

First, a first example of a liquid crystal display according to another exemplary embodiment of the present invention will be described with reference to FIGS. 9 to 11.

A plurality of image scanning lines 121, a plurality of gate electrodes 125a, and a plurality of storage electrode lines 131 are formed on an insulating substrate 110 made of transparent glass or plastic. .

The image scanning line 121 transmits an image scanning signal and mainly extends in a horizontal direction. Each image scanning line 121 may include a plurality of control electrodes 124 protruding upward, and may include end portions having a large area for connection with another layer or an external driving circuit. An image scan driving circuit (not shown) for generating an image scan signal is mounted on a flexible printed circuit film (not shown) attached to the substrate 110 or directly mounted on the substrate 110. Or may be integrated into the substrate 110. When the image scan driving circuit is integrated on the substrate 110, the image scan line 121 may extend to be directly connected to the image scan driving circuit.

The gate electrode 125a receives a sensing data signal and has a rectangular shape.

The storage electrode line 131 receives a predetermined voltage and almost extends in parallel with the image scanning line 121. Each storage electrode line 131 is positioned between two adjacent image scanning lines 121 and is close to a lower side of the two image scanning lines 121. However, the shape and arrangement of the storage electrode line 131 may be modified in various ways.

The image scanning line 121, the gate electrode 125a, and the storage electrode line 131 may be formed of aluminum-based metal such as aluminum (Al) or aluminum alloy, silver-based metal such as silver (Ag) or silver alloy, copper (Cu), copper alloy, or the like. It may be made of copper-based metals, molybdenum-based metals such as molybdenum (Mo) or molybdenum alloys, chromium (Cr), tantalum (Ta) and titanium (Ti). However, they may have a multilayer structure including two conductive films (not shown) having different physical properties. One of the conductive films is made of a metal having low resistivity, such as aluminum-based metal, silver-based metal, or copper-based metal, so as to reduce signal delay or voltage drop. In contrast, other conductive films are made of other materials, particularly materials having excellent physical, chemical, and electrical contact properties with indium tin oxide (ITO) and indium zinc oxide (IZO), such as molybdenum-based metals, chromium, tantalum, and titanium. Good examples of such a combination include a chromium bottom film, an aluminum (alloy) top film, and an aluminum (alloy) bottom film and a molybdenum (alloy) top film. However, the image scanning line 121, the gate electrode 125a, and the storage electrode line 131 may be made of various metals or conductors.

Side surfaces of the image scanning line 121, the gate electrode 125a, and the storage electrode line 131 are inclined with respect to the surface of the substrate 110, and the inclination angle is preferably about 30 ° to about 80 °.

An insulating layer 140 made of silicon nitride (SiNx) or silicon oxide (SiOx) is formed on the image scanning line 121, the gate electrode 125a, and the storage electrode line 131.

A plurality of linear semiconductors 151 and a plurality of island semiconductors 155a made of hydrogenated amorphous silicon (amorphous silicon is abbreviated a-Si) or polysilicon are formed on the insulating layer 140. It is.

The linear semiconductor 151 mainly extends in the longitudinal direction and includes a plurality of extensions 154 extending toward the control electrode 124. The linear semiconductor 151 is wide in the vicinity of the image scanning line 121 and the sustain electrode line 131 and covers the wide area.

The island-like semiconductor 155a is mainly formed inside the gate electrode 125a and has a rectangular shape.

A plurality of linear and island ohmic contacts 161, 165, 163a, and 165a are formed on the semiconductors 151 and 155a. The ohmic contacts 161, 165, 163a, and 165a may be made of a material such as n + hydrogenated amorphous silicon in which n-type impurities such as phosphorus are heavily doped, or may be made of silicide. The linear ohmic contact 161 has a plurality of protrusions 163, and the protrusion 163 and the island-type ohmic contact 165 are paired and disposed on the protrusion 154 of the semiconductor 151.

The island-like ohmic contacts 163a and 165a are paired and disposed on the island-like semiconductor 155a.

Side surfaces of the semiconductors 151 and 155a and the ohmic contacts 161, 165, 163a, and 165a are also inclined with respect to the surface of the substrate 110, and the inclination angle is about 30 ° to about 80 °.

A plurality of image data lines 171, a plurality of output electrodes 175, and a plurality of input wires 172a are disposed on the ohmic contacts 161, 165, 163a, and 165a and the insulating layer 140. ) And a plurality of data conductors including a plurality of output wirings 174a are formed.

The image data line 171 transmits an image data signal and mainly extends in a vertical direction to cross the image scan line 121 and the storage electrode line 131. Each image data line 171 includes a plurality of input electrodes 173 extending toward the control electrode 124 and include a wide end portion for connection with another layer or an external driving circuit. Can be. An image data driving circuit (not shown) for generating an image data signal is mounted on a flexible printed circuit film (not shown) attached to the substrate 110, directly mounted on the substrate 110, or the substrate 110. Can be integrated into the When the data driving circuit is integrated on the substrate 110, the image data line 171 may be extended to be directly connected thereto.

The output electrode 175 is separated from the image data line 171 and faces the input electrode 173 around the control electrode 124. Each output electrode 175 includes one wide end 177 and the other end which is rod-shaped. The wide end portion 177 overlaps the storage electrode line 131, and the rod-shaped end portion is partially surrounded by the bent input electrode 173.

One control electrode 124, one input electrode 173, and one output electrode 175, together with the protrusion 154 of the semiconductor 151, function as one switching element Q. and a channel of the thin film transistor is formed in the protrusion 154 between the input electrode 173 and the output electrode 175.

The input wiring 172a is separated from the image data line 171 and extends in the vertical direction between two adjacent pixels in which the image data line 171 is not formed to cross the image scan line 121 and the storage electrode line 131. do. The input wire 172a receives and transmits an input voltage Vs.

The output wiring 174a is separated from the input wiring 172a and immediately extends in the vertical direction to cross the image scanning line 121 and the storage electrode line 131. Each of the output wirings 174a is bent to the right from the bottom of the portion overlapping with the island-like semiconductor 155a to a region not overlapping with the island-like semiconductor 155a, and then extends in a straight line by a predetermined distance, and then to the left to extend in the vertical direction. A bend 176 is included.

One gate electrode 125a, input wiring 172a, and output wiring 174a, together with exposed portion 154a of semiconductor 155a, function as one output transistor Qs ₁ -Qs _k . The channel of the thin film transistor is formed in the exposed portion 154a of the semiconductor 155a between the input wiring 172a and the output wiring 174a.

As a result, the output transistors Qs _{1 to} Qs _k operate according to the sensing data signal applied to the gate electrode 125a to output an output signal having a corresponding magnitude based on the input voltage Vs applied to the input wiring 172a. The signal is transferred to the amplifier 810 through the output line 174a.

The data conductors 171, 175, 172a, and 174a are preferably made of refractory metals or alloys thereof such as molybdenum, chromium, tantalum, and titanium, and include a refractory metal film (not shown) and a low resistance conductive material. It may have a multilayer structure including a film (not shown). Examples of the multilayer structure include a double layer of chromium or molybdenum (alloy) lower layer and an aluminum (alloy) upper layer, and a triple layer of molybdenum (alloy) lower layer and aluminum (alloy) interlayer and molybdenum (alloy) upper layer. However, the data conductors 171, 175, 172a, and 174a may be made of various other metals or conductors.

The data conductors 171, 175, 172a, and 174a may also be inclined at an inclination angle of about 30 ° to about 80 ° with respect to the surface of the substrate 110.

The ohmic contacts 161, 165, 163a, and 165a exist only between the semiconductors 151 and 155a below and the data conductors 171, 175, 172a and 174a above and lower the contact resistance therebetween. . Although the linear semiconductor 151 is narrower than the image data line 171 in most places, as described above, the width of the linear semiconductor 151 meets the image scanning line 121 and the storage electrode line 131 so that the profile of the surface is smoothed. The line 171 is prevented from being disconnected. The semiconductors 151 and 155a are exposed between the input electrode 173 and the output electrode 175, and between the input wiring 172a and the output wiring 174a, as well as the image data line 171 and the output electrode 175. There is a part.

A passivation layer 180 is formed on the data conductors 171, 175, 172a, and 174a and the exposed portions of the semiconductors 154 and 154a. The passivation layer 180 may be made of an inorganic insulator or an organic insulator, and may have a flat surface. Examples of the inorganic insulator include silicon nitride and silicon oxide. The organic insulator may have photosensitivity and the dielectric constant is preferably about 4.0 or less. However, the passivation layer 180 may have a double layer structure of the lower inorganic layer and the upper organic layer so as not to damage the exposed portions of the semiconductors 154 and 154a while maintaining excellent insulating properties of the organic layer.

A plurality of contact holes 185 and 183 exposing the output electrode 175 and the gate electrode 125a are formed in the passivation layer 180, and a gate electrode is formed in the passivation layer 180 and the insulating layer 140. A plurality of contact holes 183 exposing 125a are formed. In addition, a plurality of contact holes may be formed in the passivation layer 180 to expose end portions of the image data line 171. The contact hole 183 is formed in the portion where the overlapping area of the gate electrode 125a, the input wiring 172a, and the output wiring 174a is reduced by the bent portion 176 of the output wiring 174a, but in other portions. Can be formed. In addition, the bent portion may be formed on the input wiring 172a instead of the output wiring 174a.

A plurality of pixel electrodes 191 are formed on the passivation layer 180. The pixel electrode 191 is made of a transparent conductive material such as ITO or IZO, and is physically and electrically connected to the output electrode 175 through the contact hole 185, and applies an image data voltage from the output electrode 175. Receive. The pixel electrode 191 to which the image data voltage is applied generates an electric field together with a common electrode (not shown) of a common electrode display panel (not shown) to which the common voltage Vcom is applied. The direction of the liquid crystal molecules of the liquid crystal layer (not shown) is determined. The polarization of light passing through the liquid crystal layer varies according to the direction of the liquid crystal molecules determined as described above. The pixel electrode 191 and the common electrode form a liquid crystal capacitor Clc to maintain an applied voltage even after the thin film transistor is turned off.

The wide end portion 177 of the pixel electrode 191 and the output electrode 175 connected to the pixel electrode 191 overlap the storage electrode line 131 to form a storage capacitor Cst, and the storage capacitor Cst is a voltage of the liquid crystal capacitor Clc. Strengthen your retention skills.

The pixel electrode 191 overlaps the image scanning line 121 and the image data line 171 to increase the aperture ratio, but may not overlap.

A plurality of sensing data lines 192 are also formed on the passivation layer 180 and are connected to the gate electrode 125a through the contact hole 183.

The sensing data line 192 transmits the sensing data signal to the gate electrode 125a and extends mainly in the vertical direction to overlap the input wiring 172a and the output wiring 174a. As a result, the sensing data line 192 crosses the image scanning line 121 and the storage electrode line 131.

The sensing data line 172 is made of a reflective metal such as aluminum, silver, chromium or an alloy thereof. However, the sensing data line 172 is a low-resistance reflective upper film (not shown) such as aluminum, silver, or an alloy thereof, and a lower film (not shown) having good contact properties with ITO or IZO such as molybdenum-based metal, chromium, tantalum, and titanium. ) May have a double membrane structure. When the sensing data line 172 is made of an opaque metal as described above, since the sensing data line 172 functions as a light blocking film that prevents light leakage, a separate light blocking member for preventing light leakage may be omitted.

Alternatively, the sensing data line 172 may be made of a transparent conductive material such as ITO or IZO. However, in this case, a separate light blocking member is required to prevent light leakage in a portion where the sensing data line 172 is formed.

The sensing data line 172 overlaps the input wiring 172a under which the input voltage Vs is applied to form a reference capacitor Cp. At this time, since the magnitude of the input voltage Vs is constant, it acts as a reference voltage. In addition, the sensing data line 192 forms a variable capacitor Cv by overlapping the common electrode of the common electrode display panel between the liquid crystal layer.

As such, the gate electrode 125a and the semiconductor 155a are formed at predetermined positions of one sensing data line 192, one input wiring 172a, and one output wiring 174a to form a plurality of output transistors. Is formed.

In such a liquid crystal display, since the input voltage Vs functions as a reference voltage line to which the applied input wiring 172a is connected to the reference capacitor Cp, it is not necessary to form a separate reference voltage line, and thus, the thin film transistor array panel The structure and manufacturing process of the product are simplified.

In addition, since the sensing data line 192 formed of an opaque metal functions as a light blocking film, deterioration of image quality due to light leakage is prevented. In addition, when a thick organic insulating material is used as the passivation layer 180, since the sensing data line 192 is formed on the passivation layer 180 to form a variable capacitor Cp by overlapping the common electrodes, the thickness of the passivation layer 180 is increased. There is no fear of reducing the capacitance of the variable capacitor Cp.

Next, a second example of a liquid crystal display according to another exemplary embodiment of the present invention will be described with reference to FIGS. 12 and 13.

The structure of the thin film transistor array panel according to the second example is almost the same as that shown in FIGS. 9 to 11.

A plurality of image scanning lines 121 having a control electrode 124, a plurality of island gate electrodes 125b, and a plurality of storage electrode lines 131 are formed on the substrate 110, and a gate insulating layer 140 and a protrusion are formed thereon. A plurality of linear semiconductors 151 and island semiconductors 155b including 154, a plurality of linear ohmic contacts 161 having protrusions 163, and a plurality of islands of ohmic contact 165, 163b, and 165b are provided. It is formed in turn. On the ohmic contacts 161, 165, 163b, and 165b, a plurality of image data lines 171 including an input electrode 173, a plurality of output electrodes 175, a plurality of input wirings 172, and a plurality of output wirings are provided. 174b is formed, and a protective film 180 is formed thereon. A plurality of contact holes 185 are formed in the passivation layer 180, and a plurality of pixel electrodes 191 are formed thereon.

However, in the thin film transistor array panel according to the present example, unlike the thin film transistor array panels shown in FIGS. 9 to 11, a plurality of reference voltage lines 122 are formed.

The plurality of reference voltage lines 122 receive a reference voltage and are separated from the image scan line 121 and extend mainly in the horizontal direction in parallel to the image scan line 121. Each reference voltage line 122 is positioned between two adjacent image scanning lines 121 and is formed at an approximately middle portion between the two image scanning lines 121. However, the shape and arrangement of the reference data line 122 may be modified in various ways.

In addition, unlike the thin film transistor array panel shown in FIGS. 9 to 11, in the thin film transistor array panel according to the present example, the control electrode 125b includes a protrusion 22 that protrudes in the horizontal direction.

Since the reference voltage line 122 and the protrusion 22 of the gate electrode 125b are formed on the same layer as the image scan line 121, aluminum-based metal such as aluminum (Al) or aluminum alloy, silver (Ag), silver alloy or the like It may be made of silver-based metal, copper-based metal such as copper (Cu) or copper alloy, molybdenum-based metal such as molybdenum (Mo) or molybdenum alloy, chromium (Cr), tantalum (Ta) and titanium (Ti). However, they may have a multilayer structure including two conductive films (not shown) having different physical properties. One of the conductive films is made of a metal having low resistivity, such as aluminum-based metal, silver-based metal, or copper-based metal, so as to reduce signal delay or voltage drop. In contrast, other conductive films are made of other materials, particularly materials having excellent physical, chemical, and electrical contact properties with indium tin oxide (ITO) and indium zinc oxide (IZO), such as molybdenum-based metals, chromium, tantalum, and titanium. Good examples of such a combination include a chromium bottom film, an aluminum (alloy) top film, and an aluminum (alloy) bottom film and a molybdenum (alloy) top film. However, the reference voltage line 122 may be made of various other metals or conductors.

12 and 13, the output wiring 174b is formed parallel to the input wiring 174a extending in the vertical direction without including the curved portion in the predetermined portion.

In addition, instead of the plurality of sensing data lines 172, a plurality of sensing data lines 178 are formed.

The plurality of sensing data lines 178 transmit sensing data signals and extend substantially parallel to the image data lines 171 at positions immediately adjacent to the image scanning lines 171, such that the image scanning lines 121 and the storage electrode lines 131 are provided. And the reference voltage line 122. For example, as illustrated in FIG. 12, the sensing data line 178 may be formed on the right side of the image data line 171. The protrusion 22 of the gate electrode 125b protrudes toward the sensing data line 178 on the left side. However, it is preferable not to overlap with the adjacent sensing data line 178, but some may overlap. Each reference voltage line 122 may include a protrusion that protrudes up or down at a portion overlapping the sensing data line 178 to increase an overlapping area with the sensing data line 178.

Since the sensing data line 178 is formed on the same layer as the image scanning line 171, the sensing data line 178 is preferably made of a refractory metal such as molybdenum, chromium, tantalum, and titanium, or an alloy thereof. Not shown) and a low resistance conductive film (not shown). Examples of the multilayer structure include a double layer of chromium or molybdenum (alloy) lower layer and an aluminum (alloy) upper layer, and a triple layer of molybdenum (alloy) lower layer and aluminum (alloy) interlayer and molybdenum (alloy) upper layer. However, the sensing data line 178 may be made of various other metals or conductors.

In addition, the passivation layer 180 may include a plurality of contact holes 186 exposing a part of the sensing data line 178, and the passivation layer 180 and the gate insulating layer 140 may include a plurality of contacts exposing a part of the protrusion 22. A hole 187 is included.

In addition, a plurality of contact assistants 86 are formed on the passivation layer 180 in addition to the pixel electrode 191.

The contact auxiliary member 86 is formed on the same layer as the pixel electrode 191 and is made of the same material as the pixel electrode 191, that is, a transparent conductive material such as ITO or IZO.

The contact auxiliary member 86 connects the protrusion 22 and the sensing data line 178 through the contact holes 186 and 187 to transmit a data sensing signal to the gate electrode 125b.

One gate electrode 125b, input wiring 172b, and output wiring 174b, together with the exposed portion 154b of semiconductor 155b, function as one output transistor Qs ₁ -Qs _k . The channel of the thin film transistor is formed in the exposed portion 154b of the semiconductor 155b between the input wiring 172b and the output wiring 174b.

The reference capacitor Cp is formed at a portion where the sensing data line 178 overlaps the reference voltage line 122 below, and the sensing data line 178 overlaps the common electrode of the common electrode display panel between the liquid crystal layer. It forms a variable capacitor (Cv).

Sides of the reference voltage line 122 and the sensing data line 178 may also be inclined at an inclination angle of about 30 ° to about 80 ° with respect to the surface of the substrate 110.

Examples of the sensing unit include a variable capacitor and a reference capacitor, but the present invention is not limited thereto, and other types of sensing elements may be used.

In addition, in the exemplary embodiment of the present invention, the liquid crystal display device is described as a display device, but the present invention is not limited thereto, and the same applies to a flat panel display device such as a plasma display device and an organic light emitting display device. Can be applied.

According to the present invention, according to the present invention, since the sensing unit is formed on the thin film transistor array panel without using a separate display panel, the volume and weight of the display device are greatly reduced.

In addition, since a plurality of output transistors are formed on one sensing data line, the sensitivity variation of the sensing unit according to the contact position of the finger or the like is reduced, thereby improving the operating characteristics of the sensing unit.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

Claims (22)

A plurality of pixels, A plurality of image data lines for transmitting an image data signal to the pixel; A plurality of image scanning lines for transmitting an image scanning signal to the pixels; A plurality of detectors, One sensing data line connected to the plurality of sensing units, A plurality of sensing signal output means connected to the sensing data line and generating one output signal based on the sensing data signal flowing through the sensing data line Display device comprising a. In claim 1, And a plurality of sensing signal output means are formed for every n sensing units. In claim 2, N is 1; In claim 1, And each sensing signal output means is a thin film transistor having a control terminal to which the sensing data line is connected. In claim 4, And a sensing signal processor configured to receive the output signal and generate a sensing signal based on the output signal. In claim 5, And the sensing signal output means further comprises an output terminal connected to the branch signal processor to output the output signal and an input terminal to which an input voltage of a predetermined magnitude is applied. In claim 6, And each sensing signal output means is a thin film transistor. In claim 1, And a reset signal input unit connected to the sensing data line and configured to receive a reset voltage and supply the reset data line to the sensing data line. An image scanning line and a gate electrode having a control electrode formed on the substrate, A first insulating film formed on the image scanning line and the gate electrode; First and second semiconductors formed on the first insulating film, Image data lines, output electrodes, input wirings and output wirings formed on the first and second semiconductors and the exposed first insulating film; Formed on the output image data line, the input wiring and the output wiring; A second insulating film having first and second contact holes exposing a part of the output electrode and a part of the gate electrode, respectively; A pixel electrode formed on the second insulating film and connected to the drain electrode through the first contact hole; and A sensing data line formed on the second insulating layer and connected to the gate electrode through the second contact hole; Thin film transistor array panel comprising a. In claim 9, And the input line and the output line are formed to face the image data line with respect to the pixel electrode. In claim 10, And the input wiring is separated from the output wiring and formed in parallel with the output wiring. In claim 11, And the output line includes a bent portion, and the bent portion is formed near the second contact hole. In claim 9, The first semiconductor is formed under the image data line and the output electrode. And the second semiconductor is formed under the input wiring and the output wiring. In claim 9, The sensing data line is a thin film transistor array panel made of a reflective metal. In claim 9, The sensing data line is a thin film transistor array panel made of a transparent conductive material. The method of claim 15, The sensing data line is formed with a pixel electrode. An image scanning line, a gate electrode and a reference voltage line having a control electrode formed over the substrate, A first insulating film formed on the image scanning line, the gate electrode, and the reference voltage line; First and second semiconductors formed on the first insulating film, Image data lines, output electrodes, input wirings and output wirings, and sensing data lines formed on the first and second semiconductors and the exposed first insulating film; First, second, and second electrodes formed on the output image data line, the input wiring and the output wiring, and the sensing data line and exposing a part of the output electrode, a part of the sensing data line, and a part of the gate electrode, respectively; A second insulating film having three contact holes, A pixel electrode formed on the second insulating film and connected to the drain electrode through the first contact hole; and A connection member formed on the second insulating layer and connecting the sensing data line and the gate electrode through the second and third contact holes. Containing Thin film transistor display panel. The method of claim 17, And the input line and the output line are formed to face the image data line with respect to the pixel electrode. The method of claim 17, And the input wiring is separated from the output wiring and formed in parallel with the output wiring. The method of claim 18, The sensing data line is formed to face the input line and the output line around the pixel electrode and is formed parallel to the image data line. The method of claim 17, The first semiconductor layer is formed under the image data line and the output electrode. And the second semiconductor layer is formed under the input wiring and the output wiring. The method of claim 17, And the connection member is formed on the same layer as the pixel electrode.

Images