KR20070022453A - Chemical vapor deposition apparatus - Google Patents

Abstract

A chemical vapor deposition apparatus for manufacturing a semiconductor device is disclosed. The deposition apparatus includes a chamber having a space in which a process for processing a substrate is performed, and a dome-shaped cover covering an upper portion of the chamber. It is provided below the process chamber, and includes a stage for supporting a substrate and a gas discharge unit coupled to one side of the lower side of the process chamber. It is fastened to the upper center of the cover, and includes a gas supply for introducing a deposition gas into the chamber. And a gas injection nozzle connected to the gas supply part in the chamber and substantially uniformly providing the deposition gas flowing through the gas supply part to the upper portion of the substrate. By using the vapor deposition apparatus having the above configuration, it is possible to form a film having a substantially uniform thickness on the substrate.

Description

Chemical vapor deposition apparatus {Apparatus for chemical vapor deposition}

1 is a perspective view showing a chemical vapor phase apparatus according to an embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100: chemical vapor deposition apparatus 102: substrate

110: chamber 115: cover

120: stage 130: edge ring

140: gas providing unit 145: gas injection unit

150: gas exhaust

The present invention relates to an apparatus for depositing a film, and more particularly to a single-phase chemical vapor deposition apparatus.

Recently, the manufacturing technology of semiconductor devices has been developed to improve the degree of integration, reliability, response speed, etc. in order to meet various needs of consumers. Generally, a semiconductor device is manufactured by forming a predetermined film on a semiconductor substrate and forming the film in a pattern having electrical properties.

The deposition process for forming the film is largely divided into physical vapor deposition (PVD) and chemical vapor deposition. The chemical vapor deposition process is a process of forming a film on a semiconductor substrate by chemical reaction of a gas provided into a process chamber, and is classified into various process conditions such as temperature, pressure, and state of a reactive gas.

Recently, a chemical vapor deposition process is widely used to form a material film for forming a semiconductor device. The chemical vapor deposition process decomposes a deposition gas provided into a chemical vapor chamber by heat or RF energy, and then chemically adsorbs the decomposed deposition gas on the surface of the substrate to form a film. The purpose of performing the chemical vapor deposition process is to form a thin film having a substantially uniform thickness on the surface of the substrate, or to fill the gap between the lines and other features formed on the substrate. As described above, in order to form a thin film uniformly or to fill a narrow gap, a deposition apparatus for performing the chemical process is required.

In general, the chemical vapor deposition apparatus applied to the chemical vapor deposition process includes a chamber having a space in which a process for depositing a film on a surface of a semiconductor substrate, a dome-shaped cover covering an upper portion of the chamber, and a lower portion of the chamber. A plate for supporting a substrate, a gas supply part provided at one side of the lower side of the chamber to provide deposition gas into the chamber, and a gas nozzle coupled to the gas supply part to eject a gas to an upper portion of the substrate to an outer portion of the chamber; do.

In order to uniformly form a film on a semiconductor substrate using the chemical vapor deposition apparatus, it is very important that the deposition gases are uniformly provided on the surface of the substrate. However, in the chemical vapor deposition apparatus having the above-described structure, when the deposition process is performed, the deposition gas is more provided at the edge portion of the semiconductor substrate than in the central portion of the semiconductor substrate. This is because nozzles for providing the deposition gases in the chemical vapor deposition apparatus are provided to face from the substrate edge portion to the substrate center portion.

Since the deposition gases are provided in a larger amount at the edge portion of the semiconductor substrate as described above, there is a problem that the thickness of the film formed at the center portion of the semiconductor substrate is lower than the thickness of the film at the edge portion of the semiconductor substrate.

It is therefore an object of the present invention to provide a chemical vapor deposition apparatus capable of forming a film having a uniform thickness on a substrate surface.

Chemical vapor deposition apparatus according to an embodiment of the present invention for achieving the above object includes a chamber having a space in which a process for processing a substrate is performed and a dome-shaped cover covering the upper portion of the chamber. It is provided below the process chamber, and includes a stage for supporting a substrate and a gas discharge unit coupled to one side of the lower side of the process chamber. It is fastened to the upper center of the cover, and includes a gas supply for introducing a deposition gas into the chamber. And a gas injection unit connected to the gas supply unit in the chamber and substantially uniformly providing the deposition gas flowing through the gas supply unit to the upper portion of the substrate.

The chemical vapor deposition apparatus having the above-described configuration can uniformly provide the deposition gas for forming the film on the substrate using a gas supply unit and a gas ejecting unit fastened to the upper center of the cover. Because of this, the deposition gases are substantially uniformly provided in the central portion of the substrate and the outer portion of the substrate, thereby improving the uniformity of the film.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments and may be implemented in other forms. The embodiments introduced herein are provided to make the disclosure more complete and to fully convey the spirit and features of the invention to those skilled in the art. In the drawings, the thickness and size of components of each apparatus are exaggerated for clarity of the invention, and the components of each apparatus may further include various additional units not described herein. .

Chemical vapor deposition apparatus

1 is a cross-sectional view showing a chemical vapor deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the chemical vapor deposition apparatus 100 includes a chamber 110, a cover 115, a stage 120, an edge ring 130, a gas supply unit 140, and a gas exhaust unit 150. do.

The chamber 110 has a hollow cylindrical shape, and provides a space for performing a predetermined substrate processing process, for example, a deposition process for forming a film on the substrate 102. One side surface of the chamber 110 is provided with a slit type substrate entrance 112 for entering and exiting the substrate 102. The substrate entrance 112 is opened and closed by a slit valve.

The cover 115 is provided to cover the upper portion of the cylindrical chamber 100 to define the interior space of the chamber for processing the substrate. The cover 115 has a dome shaped bottom surface facing the stage provided in the chamber 100. That is, the cover 115 has a dome shape. In addition, a sealing member may be mounted under the cover 115 to seal an internal space in which the deposition process is performed from the outside.

As an example, when the chemical vapor deposition apparatus performs a plasma chemical vapor deposition process, a coil (not shown) for supplying R.F power may be provided on a bottom surface of the cover 115. In this case, the apparatus may further include an RF power providing unit (not shown) for applying RF power to the coil. In addition, the cover 115 may further include a temperature controller (not shown) for controlling the temperature of the cover 115.

The stage 120 is provided below the chamber and has a disc shape to support the substrate 102 on an upper surface thereof. The substrate 102 may be loaded onto the stage 120 and unloaded from the stage 120 by a plurality of lift pins (not shown) disposed in the vertical direction through the stage 120. The lift pins may be driven in a vertical direction by lifters (not shown) coupled to the bottom of the stage 120.

Specifically, the stage 120 is formed with a step along the edge of the upper surface. The stage 120 may be disposed such that the distance from the side wall of the chamber 110 in which the substrate entrance and exit 112 is formed is greater than the distance from the side wall of the chamber 110 in the direction in which the discharge port 114 is formed. have.

A heater (not shown) for heating the substrate 102 supported on the stage 120 is provided on the bottom surface or the inside of the stage 520. The heater may be integrally formed with the stage 520.

In addition, a first purge gas supply part 122 is provided below the stage 120 to penetrate the bottom surface of the chamber 110. The first purge gas supplier 122 supplies a purge gas to the lower surface of the stage 120. An inert gas is used as said purge gas. For example, the inert gas is helium gas, nitrogen gas, argon gas, or the like. The purge gas prevents the deposition gas supplied onto the stage 120 from flowing into the lower portion of the stage 120.

In addition, a second purge gas supply part 124 is provided through the bottom surface of the chamber 110 and the stage 120. The second purge gas supply unit 124 supplies purge gas between the upper surface of the stage 120 and the substrate 102 supported on the upper surface of the stage 120. The purge gas prevents the deposition gas supplied onto the stage 120 from flowing between the upper surface of the stage 120 and the substrate 102.

The edge ring 130 is provided along the step forming portion and the side portion of the stage 120. The edge ring 130 concentrates the deposition gas supplied to the chamber 110 onto the substrate 102 supported on the stage 120.

The gas supply unit 140 is fastened to an upper center portion of the cover 115 to introduce a deposition gas for forming a film on a substrate.

Specifically, the gas supply unit 140 is connected to gas supply lines (not shown) connected to an opening (not shown) formed at an upper center of the cover 115 and one end of the gas supply lines, and accommodates the deposition gas. It has a structure including a gas containing portion (not shown). In particular, a flow rate control unit (not shown) and an air valve (not shown) may be installed in the gas providing unit to control the flow rate and flow of the reaction gas.

In addition, a gas injection unit 145 is provided at one end of the gas supply unit 140 penetrating the cover 115 to uniformly supply the deposition gas to the upper portion of the substrate seated on the stage in the chamber 110. do. Preferably, the gas injection unit 145 is provided with a gas injection nozzle for injecting a gas in a radial direction, it is preferable to inject one type of deposition gas from the gas injection nozzle.

In particular, the gas supply unit 140 is provided at the upper center portion of the cover to uniformly supply the deposition gas to the center portion of the substrate. If the gas supply unit 140 is provided on the side of the chamber to provide the deposition gas to the substrate, the distribution of the deposition gases is more concentrated on the edge of the substrate.

Therefore, the gas supply unit 140 may be formed to penetrate the central portion of the cover 115. Therefore, deposition gases may be provided in the vertical direction to the center of the substrate through the gas supply unit 140.

A discharge port 114 is formed at one side of the lower side of the chamber 110. The gas exhaust part 150 is fastened to the outlet 114 of the chamber. Specifically, the gas exhaust unit 150 includes a gas exhaust line and a vacuum pump (not shown) provided in the gas exhaust line (not shown). Here, the gas exhaust line is a flow path for discharging unreacted deposition gas and particles (reaction by-products) to the outside of the chamber during the deposition process of forming a thin film on the substrate. In addition, the gas exhaust unit 150 serves as a passage through which a vacuum is provided into the chamber 110 or discharges unreacted gas and process by-products inside the chamber 110.

In particular, the gas exhaust line (not shown) of the gas exhaust unit 150 is connected to the chamber 110 by a fastening unit (not shown) connected to the gas outlet 114. The fastening unit includes a first fastening unit provided between the chamber and the discharge line and coupled to the gas outlet of the chamber and a second fastening unit coupled to the inlet of the exhaust line.

In addition, the gas exhaust unit 150 is provided to face the substrate entrance and exit 112. That is, the gas exhaust unit 150 and the substrate entrance and exit 112 are preferably located in opposite directions with respect to the center of the chamber 110.

As described above, using the deposition apparatus according to the present invention, the deposition gas provided into the chamber to form the film may be uniformly provided onto the substrate through the gas supply portion and the gas supply exposure fastened to the upper center of the cover. have. As a result, the deposition gases are substantially uniformly provided at the center of the substrate and at the outer portion of the substrate, thereby improving the uniformity of the film. Therefore, the semiconductor device excellent in the operating characteristic can be manufactured by using the said vapor deposition apparatus.

As described above, although described with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified without departing from the spirit and scope of the invention described in the claims below. And can be changed.

Claims (4)

A chamber having a space in which a process for processing the substrate is performed; A cover covering an upper portion of the chamber; A plate provided below the process chamber and supporting the substrate; A gas outlet coupled to one side of the lower side of the process chamber; A gas supply unit coupled to an upper center of the cover and configured to introduce deposition gas into the chamber; And And a gas injector connected to the gas supply part in the chamber and providing a deposition gas flowing through the gas supply part to the upper portion of the substrate substantially uniformly. The chemical vapor deposition apparatus according to claim 1, wherein the cover has a dome shape. The chemical vapor deposition apparatus as claimed in claim 1, wherein the gas supply unit is coupled through a central portion of the cover. The chemical vapor deposition apparatus according to claim 1, wherein the gas injector comprises a plurality of nozzles for injecting the deposition gas introduced from the gas providing part.

Images