KR20060118239A - Source supply and method - Google Patents

Abstract

The present invention relates to a source supply apparatus for supplying a deposition source into a chamber. Source supplying apparatus of the present invention, the reaction chamber, and the first source container and the second source container which is connected to the reaction chamber and accommodates the same source, and one of the first source container and the second source container to choose the reaction chamber It is configured to include a selection means for selectively supplying to the source supply apparatus that can continuously perform the thin film deposition process by continuously supplying the deposition source even during the replacement of the source container, and the pipe passing through the deposition source is not contaminated To provide.

Description

Source supply and method {APPARATUS AND METHOD FOR SUPPLYING SOURCE}

1 is a schematic diagram of a source supply apparatus according to the prior art.

2 is a schematic diagram of a source supply apparatus according to the present invention.

3 is a schematic diagram of a source supply apparatus according to the present invention in which three-way valves are mounted to respective pipes.

4 is a schematic diagram of a source supply apparatus according to the present invention in which a source of a second source container is supplied to a reaction chamber.

5 is a schematic diagram of a source supply apparatus according to the present invention in which a first source container is separated.

6 is a schematic diagram of a source supply apparatus according to the present invention in which a first source container is coupled to a pipe after filling a source.

<Description of the symbols for the main parts of the drawings>

100: chamber 210, 220: source container

212, 222: residual amount sensor 301 ~ 310: valve

401 ~ 410: Piping 420, 430: Common piping

411 ~ 416: Manual valve 500: Pump

S: deposition source

The present invention relates to a source supply apparatus and a method for supplying a deposition source into a chamber for thin film deposition, and more particularly, the process is not interrupted even when replacing the source container with two or more source containers, A source feed apparatus and method configured to prevent contamination of connected piping.

Hereinafter, a conventional source supply apparatus will be described with reference to the accompanying drawings.

1 is a schematic diagram of a conventional source supply apparatus. As shown in FIG. 1, a conventional source supply apparatus includes a chamber 10 in which a thin film deposition process is performed, a source container 20 containing a deposition source S for thin film deposition, and a carrier (not shown). A mass flow controller (MFC) for controlling the amount of carrier gas supplied from a gas supply source is provided between the flow rate control valve 30, the flow rate control valve 30, and the source container 20, so that the flow rate control valve ( The gas pipe 41 for transferring the carrier gas controlled in 30 to the source container 20, and is installed between the chamber 100 and the source container 20 to store the deposition source S of the source container 20 in the chamber. Piping 42 to be delivered to (10), a gas valve 61 provided on the gas pipe 41 to open and close the flow path of the carrier gas, and installed on the pipe 42 to open and close the flow path of the deposition source And a source valve 62 and a pump 70 connected to the chamber 10 to regulate the pressure inside the chamber. In addition, the gas pipe 41 is provided with a passive gas valve 51 on the downstream side of the gas valve 61, that is, adjacent to the source container 20, and upstream of the source valve 62 in the pipe 42. On the side, that is, the manual source valve 52 is provided at a position adjacent to the source container 20. In addition, the portion between the manual gas valve 51 and the gas valve 61 of the gas pipe 41 and the portion between the manual source valve 52 and the source valve 62 of the pipe 42 are connected by the first connection pipe. And a manual purge valve 53 is provided on the first connecting pipe, and a second connecting pipe is connected between an upstream side of the gas valve 61 of the gas pipe 41 and a downstream side of the source valve 62 of the pipe 42. And a purge valve 63 are provided on the second connection pipe.

The manual gas valve 51, the manual source valve 52 and the manual purge valve 53 are valves which are normally operated manually, and the manual gas valve 51 and the manual source valve 52 are opened when the source supply device is in operation. When the device is in operation, but the operation of the device is stopped and the source container 20 is fired and detached, it is closed to facilitate the loading and detachment of the source container 20. The manual purge valve 53 is provided when the device is in operation. It is in the closed state but when the device is stopped and the residual deposition source S inside the pipe 42 is to be removed, it is opened.

The gas valve 61, the source valve 62, and the purge valve 63 are pneumatic valves which are normally controlled to be opened and closed by a control unit (not shown), and the gas valve 61 and the source valve when the source supply device is in operation. Open 62 and close the purge valve 63, but reverse these operations when the operation of the apparatus is to be stopped and the residual deposition source S inside the pipe 42 is to be removed.

That is, while the deposition source S in the source container 20 is supplied into the chamber 10, the manual purge valve 53 and the purge valve 63 are closed and the remaining valves 51, 52, 61, and 62 are closed. Are all open, the carrier gas supplied through the flow control valve 30 is introduced into the chamber 10 after passing through the source container 20.

The gas pipe 41 has an end drawn into the source container 20 so as to be immersed in the deposition source S, and the carrier gas introduced into the source container 20 through the gas pipe 41 is the deposition source S. ) Bubble inside When bubbles are generated in the deposition source S as described above, the efficiency of introducing the deposition source S into the chamber 10 is improved.

After the deposition source S in the source container 20 is exhausted, the supply of the deposition source S must be restarted after replacing the source container 20. To this end, the source container 20 is configured to be detachable from the pipe 42. In particular, the gas pipe 41 may be configured such that a part of the gas pipe 41 disposed in the source container 20 is separated together with the source container 20. When the source container 20 is replaced, the manual gas valve 51 and the manual source valve 52 installed in the gas pipe 41 and the pipe 42 must be closed, and then the source container 20 must be separated and replaced. During the replacement of the source container 20, there was a problem in that the supply of the deposition source S into the chamber 10 should be stopped.

In addition, in the state in which the supply of the deposition source S into the chamber 10 is stopped, the deposition source remaining in the gas pipe 41 and the pipe 42 must be removed. For example, only the gas valve 61 and the manual gas valve 51 are opened to remove the deposition source remaining inside the end of the gas pipe 41, or the manual purge valve 53 and the manual source valve 52 are separated from each other. Deposition remaining in the pipe 42 of the source container 20 by removing only the source valve 62, or depositing remaining in the pipe 42 of the chamber 10 by opening only the purge valve 63. You can remove the source.

However, in the conventional source supply apparatus as described above, since the supply of the deposition source S is temporarily stopped and the purge process is performed when the source container 20 is replaced, productivity is significantly reduced due to the interruption of the thin film deposition process. In particular, in order to resume the supply after the supply of the deposition source is stopped, it takes much time to control the deposition source S in the source container 20 to a desired state. In addition, when the thin film formation is not formed at one time due to the interruption of the supply of the deposition source (S), there is a disadvantage that can cause a defect of the product.

In addition, when the temperature of the pipe is rapidly cooled in the purge process of removing the deposition source (S) remaining in each pipe, the characteristics of the deposition source (S) remaining in the pipe is changed and deposited inside the pipe, so the inside of the pipe May be contaminated.

Disclosure of Invention An object of the present invention is to provide a source supplying apparatus and method for continuously supplying a deposition source even while replacing a source container so that the thin film deposition process is not interrupted.

It is another object of the present invention to provide a source supplying apparatus and method capable of continuously supplying a deposition source in a uniform state to improve deposition characteristics.

It is another feature of the present invention to provide a source supply apparatus and method that ensures that piping in the apparatus is not contaminated by the remaining deposition source.

Source supply apparatus according to the present invention for solving the above problems, the reaction chamber; A first source container and a second source container receiving the same source and connected to the reaction chamber; And selecting means for selectively supplying one of the first source container and the second source container to the reaction chamber.

It further comprises a residual amount sensor mounted inside each of the first source container and the second source container for measuring the deposition source residual amount, and a control unit for controlling the selection means by the residual amount detection sensor.

In the source supply apparatus according to the present invention, the selecting means includes a first valve for opening and closing a first pipe connected to the reaction chamber from a first source container, and a second valve for opening and closing a second pipe connected to the reaction chamber from a second source container. And a third valve for opening and closing a third pipe connected to the pump between the first valve and the first source container, and a fourth valve for opening and closing a fourth pipe connected to the pump between the second valve and the second source container. .

At this time, the first pipe and the second pipe are configured to be heated.

In the region adjacent to the reaction chamber, the first and second piping are merged into the first common piping, and in the region adjacent to the pump, the third and fourth piping are merged into the second common piping.

The first valve and the third valve or the second valve and the fourth valve may be applied as an integral three-way valve, and the pump is separated from the reaction chamber.

Source supply apparatus according to the present invention, is installed between the first source container and the first flow regulator, the fifth pipe for delivering a carrier gas to the first source container; A fifth valve for opening and closing the fifth pipe; A sixth pipe installed between the second source container and the second flow rate regulator to transfer the carrier gas to the second source container; A sixth valve for opening and closing the sixth pipe; A seventh valve installed for source delivery between the first source container and the third pipe; And an eighth valve installed for source delivery between the second source container and the fourth pipe.

In addition, the source supply apparatus according to the present invention, the seventh pipe is connected between the first valve and the seventh valve between the first flow rate regulator and the fifth valve; A ninth valve which opens and closes the seventh pipe; An eighth pipe connected between the second valve and the eighth valve between the second flow regulator and the sixth valve; And a tenth valve for opening and closing the eighth pipe.

A first manual valve is mounted between the fifth valve and the first source container, and a third manual valve is mounted between the seventh valve and the first source container.

A ninth pipe connected between the fifth valve and the first manual valve and between the seventh valve and the third manual valve; And a fifth manual valve for opening and closing the ninth pipe.

At this time, it is preferable that the first source container and the second source container are combined in a detachable structure.

The source supply method according to the present invention comprises a reaction chamber, selection means for selectively supplying one or more of two or more source containers connected to the reaction chamber and accommodating the same source to the reaction chamber. In the source supply apparatus,

Selecting a first source container and supplying a source to the reaction chamber; The source supply of the first source container is stopped by the selection means and the second source container is selected to supply the source to the reaction chamber.

In addition, the source supply method according to the invention, the step of detecting the residual amount of the lower limit by the residual amount sensor in the first source container; The signal of the residual amount detection sensor is further transmitted to the selection means through the control unit.

In this case, the first source container and the second source container and the supply pipe connected to the reaction chamber may further comprise the step of being heated before the source supply.

In addition, it is preferable to include the step of purging through the carrier gas to remove the first source container, and the step of removing the first source container by filling the source and then remounting.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the source supply apparatus according to the present invention.

2 is a schematic view showing the configuration of a source supply apparatus according to the present invention. Source supply apparatus according to the present invention as shown in Figure 2 is a device for supplying the deposition source (S) into the chamber 100, the first source container 210 containing the deposition source (S) for thin film deposition And a first flow rate controller (MFC) for controlling the amount of carrier gas supplied to the second source vessel 220 and to the chamber 100 and the source vessels 200 (210, 220) from a carrier gas source (not shown). Mass Flow Controller 421 and the second flow controller 422 and the first and second source vessels 210 and 220 and the chamber 100, respectively, are connected between the first source vessel 210 and the second source Agent for opening and closing the first pipe 401 and the second pipe 402 and the first pipe 401 and the second pipe 402 to deliver the deposition source S of the container 220 to the chamber 100. A first valve 301 and a second valve 302 connected between the first valve 301 and the first source container 210 by a pump 500 for purging and removing residual deposition sources in each pipe. 3 piping 403 and the 2nd Fourth pipe 404 connected to the pump 500 between the valve 302 and the second source container 220, and connected between each flow controller 421, 422 and each source container (210, 220) And a fifth pipe 405 and a sixth pipe 406 which transfer the carrier gas controlled by the flow rate controllers 421 and 422 to the first source container 210 and the second source container 220. .

At this time, the first pipe 401 and the second pipe 402 are combined into the first common pipe 420 in the region adjacent to the chamber 100, and the third pipe 403 and the third pipe in the region adjacent to the pump 500. Four pipes 404 are configured to merge into the second common pipe 430.

In addition, the source supply apparatus according to the present invention is installed between the first source vessel 210 and the first flow regulator 421, the fifth pipe 405 for delivering a carrier gas to the first source vessel 210, A fifth valve 305 that opens and closes the fifth pipe 405 and a second source container 220 and a second flow controller 422 to transfer the carrier gas to the second source container 220. 6th pipe 406, the 6th valve 306 which opens and closes the 6th pipe 406, and the 7th valve provided for source delivery between the 1st source container 210 and the 3rd piping 403 ( 307 and an eighth valve 308 installed for source delivery between the second source container 220 and the fourth pipe 404.

In this case, the first and second pipes 420 and 440 may be combined as one at the inlet side of the chamber 100 as shown in the drawing, and inside the first and second source containers 210 and 220, the deposition source ( S) The first residual amount sensor 212 and the second residual amount sensor 222 for measuring the residual amount are provided, respectively.

Between the first flow controller 421 and the fifth valve 305 is connected between the first valve 301 and the seventh valve 307 is connected to the seventh pipe 407 which is opened and closed by the ninth valve 309, The eighth pipe 408, which is opened and closed by the tenth valve 310, is connected between the second flow controller 422 and the sixth valve 306 between the second valve 302 and the eighth valve 308. do.

A first manual valve 411 is provided between the fifth valve 305 and the first source container 210 to seal the inside of the first source container 210 when the first source container 210 is separated. The third manual valve 413 is provided between the seventh valve 307 and the first source container 210. In addition, a fifth pipe 405 between the fifth valve 305 and the first manual valve 411 and a fifth pipe 401 between the seventh valve 307 and the third manual valve 413 are provided in the fifth pipe 401. A ninth pipe 409 that is opened and closed by the manual valve 415 is provided.

A fourth manual valve 413 is provided between the sixth valve 306 and the second source container 220 to seal the inside of the second source container 220 when the second source container 220 is separated. The second manual valve 412 is provided between the eighth valve 307 and the second source container 210. In addition, a sixth pipe 406 between the sixth valve 306 and the fourth manual valve 414 and a second pipe 402 between the eighth valve 308 and the second manual valve 412 may include a sixth pipe. A tenth pipe 410 that is opened and closed by the manual valve 416 is provided.

These valves are configured to be operated by the control unit, when supplying the deposition source S in the source container 210 or 220 into the chamber 100, when replacing the source container 210 or 220, and each pipe For each of the cases of performing the purge process of the deposition source remaining therein, it is opened or closed as necessary. The detailed description thereof will be described together in the operation of the present invention.

First, the first and second source containers 210 and 220 are mounted to the source supply apparatus according to the present invention with the first to fourth manual valves 411 to 414 closed, and after installation, all of these valves are Open. The fifth and sixth manual valves 415 and 416 are normally kept closed.

In this state, when one of the first and second source containers 210 and 220, for example, to supply the deposition source S stored in the first source container 210 into the chamber 100, The control unit closes the valves associated with the second source vessel 220 and the second flow regulator 422 so that the carrier gas flows into the second source vessel 220 or the second source vessel 220 moves from the second source vessel 220 to the chamber 100. The deposition source S is blocked from being supplied. In this state, the control unit closes the ninth valve 309, opens the first valve 301, the third valve 303, the fifth valve 305, and the seventh valve 307 to open the first source. The deposition source S in the vessel 210 is supplied to the chamber 100.

An end of the fifth pipe 405 introduced into the first source container 210 is immersed in the deposition source S contained in the first source container 210. The carrier gas introduced into the first source container 210 through the fourth pipe 405 generates bubbles in the deposition source S, thereby controlling the behavior of the deposition source S in the first source container 210. In this way, the deposition source S is effectively supplied into the chamber 100 through the opened first pipe 401. While the deposition source S in the first source container 210 is supplied into the chamber 100, the first residual amount sensor 212 installed in the first source container 210 is placed in the first source container 210. The amount of deposition source S present is continuously detected.

When the deposition source S in the first source container 210 is continuously supplied into the chamber 100 and the remaining amount of the deposition source S in the first source container 210 is less than or equal to the preliminary reference amount, the first residual amount The detection sensor 212 detects this and transmits it to the controller, and the controller recognizes that the deposition source S in the first source container 210 will soon be exhausted. In this case, the control unit may prepare a process for supplying the deposition source S in the second source container 220 into the chamber 100, for example, on a heating wire (not shown) provided around the second source container 220. The electric power is applied to heat the deposition source S in the second source container 220.

When the deposition source S in the first source container 210 is further supplied into the chamber 100 and the remaining amount of the deposition source S in the first source container 210 is less than or equal to the exhausted reference amount, the first residual amount is detected. The sensor 212 detects this and transmits a signal to the controller, and the controller closes the first source container 210 and opens the second source container 220 to open the deposition source S in the second source container 220. To be supplied into the chamber 100. That is, the controller closes the first source container 210 by closing the first valve 301, the fifth valve 305, and the seventh valve 307, and the second valve 302 and the sixth valve 306. By opening the eighth valve 308, the carrier gas is supplied to the second source container 220 and the deposition source S is supplied to the chamber 100 through the eighth valve 308.

While the deposition source S in the second source container 220 is supplied to the chamber 100, the deposition source remaining in each pipe connected to the closed first source container 210 must be washed. To this end, after opening the third valve 303 connected to the third pipe 403, the fifth valve 305, the seventh valve 307, the ninth valve 309, and the fifth manual valve 415. To open. In this state, the carrier gas controlled through the flow control valve 300 purges the inside of the fifth pipe 405, the seventh pipe 407, the ninth pipe 409, and the third pipe 403. This will remove the residual deposition source in the piping.

Therefore, the deposition source S is exhausted in one source container, so that the deposition source S in the second source container 210 is kept in the chamber (2) while the pipe is cleaned and the source container is replaced with another source container. 100) Since it can be supplied inside, the thin film deposition process can proceed continuously.

As a result of the continuous supply of the deposition source, if the deposition source S in the second source container 220 also remains below the preliminary reference amount, the deposition source S in the first source container 210 according to the same process as described above. ) Is supplied to the chamber 100, and when the deposition source S remains below the exhaustion reference amount, the second source container 220 is closed and the first source container 210 is opened. While supplying the deposition source S in the first source container 210 into the chamber 100, the second source container 220 is replaced with another source container after cleaning the pipe.

In this case, the source container is described as separable from the source supply apparatus, but if the source source can be filled in any one of the first and second source containers 210 and 220 that are not used, the source container It may not be disconnected from the feeder.

In addition, when a larger amount of the deposition source S is to be introduced into the chamber 100, the user may deposit the deposition source S inside the first source container 210 and the second source container 220. Can be introduced into the chamber 100 at once.

In the present embodiment, a case in which two source containers 200 are provided is described, but the number of source containers 200 of the source supply apparatus according to the present invention is not limited thereto, and three or more may be provided. Therefore, the source supply apparatus according to the present invention can supply the deposition source S several times larger than the conventional source supply apparatus at one time into the chamber 100.

In addition, the source supply apparatus according to the present invention, after depositing different types of deposition source (S) in each source container 200, by selectively opening and closing the valves connected to each source container 200 of the source container 200 The type of deposition source S may be changed without replacement, and the deposition source S may be mixed and used by opening all the valves connected to each source container 200. In this case, when the number of the source containers 200 is increased to three or more, the user may mix and supply more types of deposition sources S without replacing the source containers 200 and supply the inside of the chamber 100.

In addition, the source supply apparatus according to the present invention may further include a heater for heating each pipe in order to more effectively remove the deposition source (S) remaining in the pipe. As such, when the heater is additionally provided in the source supply device, since the deposition source S remaining in each pipe is drawn out to the outside of the device without any change in properties due to cooling, the contamination of the pipe is prevented.

3 is a schematic diagram of a source supply apparatus according to the present invention, in which three-way valves are attached to each pipe, and FIG. 4 is a schematic diagram of the source supply apparatus according to the present invention, in which a source of a second source container is supplied to a reaction chamber.

3 and 4, the source supply apparatus according to the present invention may be configured such that the three-way valve is mounted at a portion to which different pipes are connected.

The first three-way valve 431 performs the functions of the first valve 301 and the third valve 303 shown in FIG. 2, and the second three-way valve 432 is the second valve 302 and the fourth valve. It performs the function of 304, the third three-way valve 433 is configured to select any one of the first flow control valve 421, the fourth three-way valve 434 is the second flow control valve 422 It is configured to be able to select any one of).

In addition, the fifth three-way valve 435 and the seventh three-way valve 437 is configured to open and close the first pipe 401 and the fifth pipe 405, the sixth three-way valve 436 and the eighth three-way valve 438 ) Is configured to open and close the fourth pipe 404 and the eighth pipe 408.

In the source supply apparatus shown in FIG. 3, each valve connected to the second source container 220 is locked and each valve connected to the first source container 210 is opened, so that the source contained in the first source container 220 is chambered. Supply to (100).

When the deposition source S in the first source container 210 is further supplied into the chamber 100 and the remaining amount of the deposition source S in the first source container 210 is less than or equal to the exhausted reference amount, the first residual amount is detected. The sensor 212 detects this and transmits a signal to the controller, and the controller closes the first source container 210 and opens the second source container 220 as shown in FIG. 4 to open the second source container 220. The deposition source (S) in the () is to be supplied into the chamber 100. That is, the controller operates the first three-way valve 431 to block the first source container 210 and the chamber 100, and the second three-way valve so that the second source container 220 and the chamber 100 are connected to each other. 432).

While supplying the deposition source S in the second source container 220 to the chamber 100, the carrier gas is transferred in the direction of the dotted arrow to transfer the deposition source remaining in the pipe connected to the closed first source container 210. Wash. Compared with the embodiment shown in FIG. 2, such a purge operation differs only in the configuration of each valve, and thus the basic purge process is the same, and thus a detailed description thereof will be omitted.

5 is a schematic diagram of a source supply apparatus according to the present invention in which a first source container is separated, and FIG. 6 is a schematic diagram of a source supply apparatus according to the present invention in which a first source container is coupled to a pipe after filling a source.

After the purge process is completed, the opened fifth three-way valve 435 and the seventh three-way valve 437 are closed, and the first source container 210 is replaced with another one. Therefore, the deposition source S is exhausted in one source container, so that the deposition source S in the second source container 210 is kept in the chamber (2) while the pipe is cleaned and the source container is replaced with another source container. 100) Since it can be supplied inside, the thin film deposition process can proceed continuously.

After filling the deposition source S in the first source container 210 separated from each pipe, the user couples the first source container 210 to each pipe again as shown in FIG. 6. When the coupling of the first source container 210 is completed, the carrier gas is transferred in the dotted arrow direction to purge the deposition source inside each pipe connected to the first source container 210.

As mentioned above, although this invention was demonstrated in detail using the preferable Example, the scope of the present invention is not limited to a specific Example and should be interpreted by the attached Claim. In addition, those skilled in the art should understand that many modifications and variations are possible without departing from the scope of the present invention.

In the present embodiment, it has been described that the valves used are some manually operated and some are controlled by the control unit, but this is only one embodiment and the present invention is not limited thereto. It is true to those who have.

Source supply apparatus according to the present invention, by continuously supplying the deposition source even during the replacement of the source container has the advantage that the thin film deposition process can be continuously performed, the pipe passing through the deposition source is not contaminated.

Claims (18)

Reaction chamber; A first source container and a second source container receiving the same source and connected to the reaction chamber; Selecting means for selectively supplying one of the first source container and the second source container to the reaction chamber; Source supply apparatus comprising a. The method of claim 1, And a residual amount detecting sensor mounted inside each of the first source container and the second source container to measure a deposition source residual amount. The method of claim 2, And a control unit for controlling the selection means by the residual amount detecting sensor. The method of claim 1, The selection means may include a first valve for opening and closing a first pipe connected to the reaction chamber from the first source container; A second valve for opening and closing a second pipe connected to the reaction chamber from the second source container; A third valve for opening and closing a third pipe connected to the pump between the first valve and the first source container; A fourth valve for opening and closing a fourth pipe connected to the pump between the second valve and the second source container; Source supply apparatus comprising a. The method of claim 4, wherein Source supply apparatus, characterized in that for heating the first pipe, the second pipe. The method of claim 4, wherein The first pipe and the second pipe is used as the first common pipe in the region adjacent to the reaction chamber, the third pipe and the fourth pipe in the region adjacent to the pump is characterized in that the second common pipe. Source supply. The method of claim 4, wherein And the first valve and the third valve or the second valve and the fourth valve are integral three-way valves. The method of claim 4, wherein And the pump is separated from the reaction chamber. The method of claim 4, wherein A fifth pipe installed between the first source container and the first flow rate regulator to transfer a carrier gas to the first source container; A fifth valve for opening and closing the fifth pipe; A sixth pipe installed between the second source container and the second flow rate regulator to transfer a carrier gas to the second source container; A sixth valve for opening and closing the sixth pipe; A seventh valve installed for source delivery between the first source container and the third pipe; An eighth valve installed for source delivery between the second source container and the fourth pipe; Source supply apparatus characterized in that it further comprises. The method of claim 9, A seventh pipe connected between the first valve and the seventh valve between the first flow rate controller and the fifth valve; A ninth valve for opening and closing the seventh pipe; An eighth pipe connected between the second valve and an eighth valve between the second flow controller and the sixth valve; A tenth valve for opening and closing the eighth pipe; Source supply apparatus characterized in that it further comprises. The method of claim 10, A first manual valve between the fifth valve and the first source container; A third manual valve between the seventh valve and the first source container Source supply apparatus characterized in that it further comprises. The method of claim 11, A ninth pipe connected between the fifth valve and the first manual valve and between the seventh valve and the third manual valve; A fifth manual valve for opening and closing the ninth pipe; Source supply apparatus characterized in that it further comprises. The method of claim 1, And the first source container and the second source container are respectively detachably coupled. Using a source supply device including a reaction chamber, two or more source vessels accommodating the same source and connected to the reaction chamber, and selection means for selectively supplying one of the two or more source vessels to the reaction chamber. In the method of supplying a source by Selecting the first source container and supplying the source to the reaction chamber; Stopping the source supply of the first source container by the selection means and selecting a second source container to supply the source to the reaction chamber; Source supply method comprising a. The method of claim 14, Detecting a lower limit of the residual amount by the residual amount sensor in the first source container; Transmitting a signal of the residual amount sensor to a selection means through a control unit; Source supply method comprising a. The method of claim 14, And a supply pipe connected to the first source container and the second source container and the reaction chamber is heated before the source supply. The method of claim 15, And purging through a carrier gas to desorb the first source container. The method of claim 17 Source supply method comprising the step of removing the first source container to charge the source and then again to purge.

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