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KR20060079332A - Electrostatic chuck of semiconductor wafers with cooling gas leakage prevention ring - Google Patents

Electrostatic chuck of semiconductor wafers with cooling gas leakage prevention ring Download PDF

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KR20060079332A
KR20060079332A KR1020040117099A KR20040117099A KR20060079332A KR 20060079332 A KR20060079332 A KR 20060079332A KR 1020040117099 A KR1020040117099 A KR 1020040117099A KR 20040117099 A KR20040117099 A KR 20040117099A KR 20060079332 A KR20060079332 A KR 20060079332A
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South Korea
Prior art keywords
wafer
cooling gas
dielectric
electrostatic chuck
electrode
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KR1020040117099A
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Korean (ko)
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김태훈
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동부일렉트로닉스 주식회사
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Priority to KR1020040117099A priority Critical patent/KR20060079332A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

본 발명은 냉각가스 누설 방지링을 구비한 반도체 웨이퍼의 정전척에 관한 것으로, 반도체 웨이퍼에 박막을 증착하거나 웨이퍼상의 특정 영역을 제거해 내는 식각공정 등에 있어서, 공정 중의 웨이퍼 과열방지를 위해 웨이퍼의 하면으로 공급되는 냉각가스가 누설되지 않도록 작동하는 냉각가스 누설 방지링을 구비한 반도체 웨이퍼의 정전척에 관한 것이다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck of a semiconductor wafer having a cooling gas leakage preventing ring. The present invention relates to a lower surface of a wafer for preventing overheating of the wafer during an etching process in which a thin film is deposited on a semiconductor wafer or a specific region on the wafer is removed. The present invention relates to an electrostatic chuck of a semiconductor wafer having a cooling gas leakage preventing ring that operates to prevent leakage of the supplied cooling gas.

이를 위한 본 발명은, 전압이 인가되어 웨이퍼를 정전인력으로 고정시키는 전극, 상기 전극을 내부에 포함하여 상기 전극을 보호하는 유전체, 상기 유전체의 하부에 위치하여 상기 전극과 유전체를 지지하는 지지대, 상기 유전체의 상부에 형성되며 웨이퍼 하면으로 냉각가스를 공급하여 플라즈마 공정 중 웨이퍼의 과열을 억제하는 냉각수단을 포함하는 냉각가스 누설 방지링을 구비한 반도체 웨이퍼의 정전척에 있어서, 상기 지지대의 상면에는 상기 유전체의 외주면을 따라 장착홈이 형성되고 상기 장착홈에는 냉각가스 누설 방지링이 장착되어, 웨이퍼와 유전체 사이의 이격을 최소화함으로써 냉각가스의 누설을 방지하도록 이루어진 것을 특징으로 한다. The present invention for this purpose is an electrode for applying a voltage to fix the wafer by electrostatic force, a dielectric to protect the electrode by including the electrode therein, a support positioned to support the electrode and the dielectric positioned below the dielectric, the An electrostatic chuck of a semiconductor wafer having a cooling gas leakage preventing ring formed on an upper portion of a dielectric and including cooling means for supplying cooling gas to a lower surface of a wafer to suppress overheating of the wafer during a plasma process. A mounting groove is formed along an outer circumferential surface of the dielectric, and the mounting groove is equipped with a cooling gas leakage preventing ring to minimize leakage of the cooling gas by minimizing the separation between the wafer and the dielectric.

반도체, 웨이퍼, 화학기상증착, 플라즈마, 정전척, 폴리이미드Semiconductor, Wafer, Chemical Vapor Deposition, Plasma, Electrostatic Chuck, Polyimide

Description

냉각가스 누설 방지링을 구비한 반도체 웨이퍼의 정전척 { Semiconductor wafer ESC with preventing ring for cooling gas leakage } Semiconductor wafer ESC with preventing ring for cooling gas leakage}             

도 1은, 종래의 정전척이 설치된 공정챔버를 개략적으로 도시한 도면,1 is a view schematically showing a process chamber in which a conventional electrostatic chuck is installed;

도 2는, 본 발명의 정전척이 설치된 공정챔버의 구성도이다.
2 is a configuration diagram of a process chamber in which the electrostatic chuck of the present invention is installed.

♧ 도면의 주요부분에 대한 설명 ♧♧ Description of the main parts of the drawing ♧

10 -- 공정챔버 20 -- 전극10-process chamber 20-electrode

30 -- 전원부 40 -- 유전체30-power supply 40-dielectric

50 -- 지지대 51 -- 장착홈50-Support 51-Mounting Groove

60 -- 냉각수단 70 -- 냉각가스 누설 방지링60-Cooling means 70-Cooling gas leak prevention ring

100 -- 정전척 W -- 웨이퍼
100-Electrostatic Chuck W-Wafer

본 발명은 냉각가스 누설 방지링을 구비한 반도체 웨이퍼의 정전척에 관한 것으로, 보다 상세하게는 반도체 웨이퍼에 박막을 증착하거나 웨이퍼상의 특정 영역을 제거해 내는 식각공정 등에 있어서, 공정 중의 웨이퍼 과열방지를 위해 웨이퍼의 하면으로 공급되는 냉각가스가 누설되지 않도록 하는 냉각가스 누설 방지링을 구비한 반도체 웨이퍼의 정전척에 관한 것이다.
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck of a semiconductor wafer having a cooling gas leakage preventing ring. More particularly, the present invention relates to an etching process for depositing a thin film on a semiconductor wafer or removing a specific region on a wafer. An electrostatic chuck of a semiconductor wafer having a cooling gas leakage preventing ring to prevent leakage of the cooling gas supplied to the lower surface of the wafer.

현대 사회에는 라디오, 컴퓨터, 텔레비젼 등의 각종 전자 제품이 매우 다양하게 사용되고 있으며, 상기 전자 제품에는 필수적으로 다이오우드, 트랜지스터, 사이리스터등의 반도체 소자가 포함된다. 위와 같이 현대 사회의 필수품인 반도체 소자는, 산화실리콘(모래)에서 고순도의 실리콘을 추출한 것을 단결정으로 성장시키고 이를 원판 모양으로 잘라서 웨이퍼를 만드는 과정, 상기 웨이퍼의 전체 표면에 막을 형성하고 필요한 부분을 제거하여 일정한 패턴을 형성하는 과정, 형성된 패턴에 따라 불순물 이온을 도핑하고 금속배선을 통하여 최초 설계된 회로를 구현하며 필요한 소자로 만들기 위한 패키지 공정등이 포함된 일련의 웨이퍼 가공 과정을 통하여 제조된다.
In the modern society, various electronic products such as radios, computers, and televisions are used in various ways, and the electronic products include semiconductor devices such as diodes, transistors, and thyristors. As described above, the semiconductor device, which is a necessity of the modern society, grows a single crystal of silicon oxide (sand) extracted from high purity into a single crystal, cuts it into a disk shape, forms a wafer, forms a film on the entire surface of the wafer, and removes necessary portions. It is manufactured through a series of wafer processing processes that include a process of forming a predetermined pattern, doping impurity ions according to the formed pattern, implementing a circuit originally designed through metallization, and a package process for making a required device.

위와 같은 반도체 제조 공정 중, 일부 공정은 필요한 장치가 구비된 공정챔버내에 공정 대상 웨이퍼가 반입되어 진행된다. In the semiconductor manufacturing process as described above, some of the processes are carried out by bringing the wafer to be processed into the process chamber provided with the necessary apparatus.

가령, 화학 반응을 이용하여 웨이퍼상에 박막을 형성하는 화학기상증착(Chemical Vapor Deposition) 공정 중 높은 에너지의 전자가 중성 상태의 가스 분자와 충돌하여 가스 분자를 분해하고 이 분해된 가스 원자가 웨이퍼에 부착되도록 하는 플라즈마 화학기상증착 공정(Plasma Enhanced Chemical Vapor Deposition), 또는 웨이퍼 상의 특정 영역을 물질의 화학 반응을 통해 제거해 내는 식각 공정 중 플라즈마를 이용한 건식식각 공정은, 모두 공정챔버 내에 웨이퍼가 반입되어 공정이 진행되는 예이다.
For example, during a chemical vapor deposition process in which a thin film is formed on a wafer using a chemical reaction, high energy electrons collide with gas molecules in a neutral state to decompose gas molecules and attach the decomposed gas atoms to the wafer. Plasma Enhanced Chemical Vapor Deposition, or dry etching using plasma during the etching process to remove specific regions on the wafer through chemical reaction of the material, the wafer is brought into the process chamber and the process is performed. This is an example.

위와 같이, 공정챔버에서 특정 공정이 진행되는 경우, 대상 웨이퍼는 웨이퍼척상에 안착되어 고정되는데, 종래에는 클램프 방식으로 웨이퍼를 잡아주었으나 클램핑되는 웨이퍼의 에지 부분이 손상되는 문제가 있어 최근에는 전극을 이용한 척킹 방식으로 웨이퍼 다이에 영향을 미치지 않도록 하고 있다. 상기 전극을 이용한 정전인력으로 웨이퍼를 잡아주는 장치가 정전척(ESC, Electro Static Chuck)인데, 이 때 정적척의 기능은 웨이퍼와 정전척 간의 정전효과를 통하여 웨이퍼를 고정시키는 수단과 상기 웨이퍼의 하면으로 냉각가스를 공급하여 공정 중 웨이퍼의 표면온도를 일정하게 유지시키는 수단으로서의 기능 두 가지이다.
As described above, when a specific process is performed in the process chamber, the target wafer is seated and fixed on the wafer chuck. However, although the wafer is conventionally held by the clamp method, the edge portion of the wafer being clamped is damaged. The chucking method used does not affect the wafer die. An electrostatic chuck (ESC) is a device for holding a wafer with an electrostatic force using the electrode, and the function of the static chuck is a means for fixing the wafer through the electrostatic effect between the wafer and the electrostatic chuck and the lower surface of the wafer. It serves as a means of supplying cooling gas to keep the surface temperature of the wafer constant during the process.

도 1은 종래의 정전척이 설치된 공정챔버를 개략적으로 도시한 도면이다. 1 is a view schematically showing a process chamber in which a conventional electrostatic chuck is installed.

도 1을 참조하면, 공정챔버(1)에는 웨이퍼(W)가 안착되는 정전척(7)이 구비되는데, 상기 정전척(7)은 전극(2)과 전원부(3), 유전체(4), 지지대(5), 냉각수단(6) 등의 구성요소로 이루어진다. Referring to FIG. 1, the process chamber 1 includes an electrostatic chuck 7 on which a wafer W is seated. The electrostatic chuck 7 includes an electrode 2, a power supply 3, a dielectric 4, It consists of components, such as the support stand 5 and the cooling means 6, for example.

각 구성요소를 상세하게 살펴보면, 먼저 전극(2)은 전원부(3)에서 전압이 인가되어 정전 인력을 통하여 웨이퍼(W)를 고정시키는 부품이며, 상기 전극(2) 보호 를 위해 전극(2)을 내부에 포함하는 유전체(4)가 설치되고, 마지막으로 상기 전극(2)과 유전체(4)를 지지하기 위해 지지대(5)가 설치된다. 이와 같은 구성을 통하여, 공정이 개시되어 웨이퍼(W)가 반입되어 정전척(7)에 배치되면 전원부(3)의 작동으로 전극(2)에 전압이 인가되면서 웨이퍼(W)가 안정적으로 안착된다. Looking at each component in detail, first, the electrode (2) is a component that fixes the wafer (W) through the electrostatic attraction by applying a voltage from the power supply (3), the electrode (2) to protect the electrode (2) A dielectric 4 included therein is provided, and finally, a support 5 is installed to support the electrode 2 and the dielectric 4. Through such a configuration, when the process is started and the wafer W is loaded and placed on the electrostatic chuck 7, the voltage is applied to the electrode 2 by the operation of the power supply unit 3, so that the wafer W is stably seated. .

한편 공정 중에는 공정챔버(1)에 고주파 파워가 인가되어 공정챔버(1)로 공급되는 공정가스를 플라즈마 상태로 전환하게 되고, 상기 플라즈마 입자가 웨이퍼(W)와 반응하여 웨이퍼(W)상에 막이 증착되거나 필요한 부분이 식각되는 공정이 진행된다. 그런데 플라즈마 형성을 위한 고주파로 인하여 공정챔버(1) 내부 및 웨이퍼(W)는 고온의 상태로 과열된다. 따라서 웨이퍼(W)를 냉각시켜 과열을 방지하는 것이 필요한데, 이러한 역할도 정전척(7)에 의해 수행된다. 즉, 정전척(7)에는 유전체(4)의 상부로 별도의 냉각수단(6)이 형성되는데, 이는 통상 헬륨과 같은 냉각가스를 홀이나 라인의 형태로 된 공급라인으로 이동시킴으로써 웨이퍼(W)가 일정 온도를 유지하도록 하는 것이다.
During the process, high frequency power is applied to the process chamber 1 to convert the process gas supplied to the process chamber 1 into a plasma state, and the plasma particles react with the wafer W to form a film on the wafer W. The process of depositing or etching the required part is performed. However, due to the high frequency for plasma formation, the inside of the process chamber 1 and the wafer W are overheated at a high temperature. Therefore, it is necessary to cool the wafer W to prevent overheating, and this role is also performed by the electrostatic chuck 7. That is, a separate cooling means 6 is formed in the electrostatic chuck 7 above the dielectric 4, which is typically moved by a cooling gas such as helium to a supply line in the form of a hole or a line. To maintain a constant temperature.

그러나, 위와 같은 종래의 정전척은, 웨이퍼가 정전척에 완전히 밀착되지 못하여 미세한 틈이 형성되고 이러한 틈으로 냉각가스가 누설되어, 웨이퍼의 온도 조절에 악영향을 미치게 된다. 가령 해당 공정이 플라즈마를 이용한 화학기상증착 공정인 경우, 웨이퍼가 과열되어 해당 부분의 금속 라인이 녹아버리게 되어 반도체 제품에 치명적인 결함을 유발할 수도 있게 된다.
However, in the conventional electrostatic chuck as described above, a fine gap is formed because the wafer does not come into close contact with the electrostatic chuck, and cooling gas leaks into the gap, which adversely affects the temperature control of the wafer. For example, if the process is a chemical vapor deposition process using plasma, the wafer may be overheated to melt the metal lines of the part, which may cause fatal defects in the semiconductor product.

본 발명은 상기와 같은 사정을 감안하여 이를 해소하고자 발명된 것으로, 신축성의 링을 사용하여 웨이퍼와 정전척간의 이격을 최소화하여 냉각가스의 누설을 방지함으로써, 웨이퍼를 적정 상태의 온도로 유지할 수 있는 냉각가스 누설 방지링을 구비한 반도체 웨이퍼의 정전척을 제공하고자 함에 그 목적이 있다.
The present invention has been invented to solve this problem in view of the above circumstances, by using a flexible ring to minimize the separation between the wafer and the electrostatic chuck to prevent leakage of the cooling gas, it is possible to maintain the wafer at an appropriate temperature It is an object of the present invention to provide an electrostatic chuck of a semiconductor wafer having a cooling gas leakage preventing ring.

상기와 같은 목적을 구현하기 위한 본 발명 냉각가스 누설 방지링을 구비한 반도체 웨이퍼의 정전척은, 전압이 인가되어 웨이퍼를 정전인력으로 고정시키는 전극, 상기 전극을 내부에 포함하여 상기 전극을 보호하는 유전체, 상기 유전체의 하부에 위치하여 상기 전극과 유전체를 지지하는 지지대, 상기 유전체의 상부에 형성되며 웨이퍼 하면으로 냉각가스를 공급하여 플라즈마 공정 중 웨이퍼의 과열을 억제하는 냉각수단을 포함하는 냉각가스 누설 방지링을 구비한 반도체 웨이퍼의 정전척에 있어서, 상기 지지대의 상면에는 상기 유전체의 외주면을 따라 장착홈이 형성되고 상기 장착홈에는 냉각가스 누설 방지링이 장착되어, 웨이퍼와 유전체 사이의 이격을 최소화함으로써 냉각가스의 누설을 방지하도록 이루어진 것을 특징으로 한다. The electrostatic chuck of the semiconductor wafer having a cooling gas leakage preventing ring according to the present invention for achieving the above object, the electrode is applied to a voltage to fix the wafer with an electrostatic force, including the electrode inside to protect the electrode Leakage of the cooling gas including a dielectric, a support positioned on the lower portion of the dielectric to support the electrode and the dielectric, and cooling means formed on the dielectric and supplying a cooling gas to the lower surface of the wafer to suppress overheating of the wafer during the plasma process. In the electrostatic chuck of the semiconductor wafer provided with a prevention ring, a mounting groove is formed on the upper surface of the support along the outer circumferential surface of the dielectric and a cooling gas leakage preventing ring is mounted on the mounting groove to minimize the separation between the wafer and the dielectric. It is characterized in that it is made to prevent the leakage of the cooling gas.

또한 상기 냉각가스 누설 방지링, 유전체, 지지대는, 각각 고무, 폴리이미드, 알루미늄 재질인 것을 특징으로 한다.
In addition, the cooling gas leakage preventing ring, the dielectric, the support is characterized in that each of the rubber, polyimide, aluminum material.

이하 본 발명의 일실시예에 따른 구성 및 작용을 예시도면에 의거하여 상세히 설명한다.Hereinafter, the configuration and operation according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

도 2는, 본 발명의 정전척이 설치된 공정챔버의 구성도이다.2 is a configuration diagram of a process chamber in which the electrostatic chuck of the present invention is installed.

도 2를 참조하면, 공정챔버(10)에는 웨이퍼(W)가 안착되는 정전척(100)이 구비되며, 상기 정전척(100)은 전극(20)과 전원부(30), 유전체(40), 지지대(50), 냉각수단(60)의 구성요소외에도 냉각가스 누설 방지링(70)의 구성요소가 추가되어 이루어진다. Referring to FIG. 2, the process chamber 10 includes an electrostatic chuck 100 on which a wafer W is seated. The electrostatic chuck 100 includes an electrode 20, a power supply 30, a dielectric 40, In addition to the components of the support 50 and the cooling means 60, the components of the cooling gas leakage preventing ring 70 is added.

정전척(100)은, 공정 중인 웨이퍼(W)를 안정적으로 잡아주는 역할과 플라즈마 공정시 웨이퍼(W)가 과열되는 것을 방지하는 두 가지 역할을 수행하는데, 전자는 전원부(30)에서 인가된 전압에 의해 정전 인력이 발생되는 전극(20)이 담당하며후자는 헬륨과 같은 냉각가스가 이동하는 공급라인으로 웨이퍼(W) 하면에 형성되는 냉각수단(60)이 담당한다. 한편 상기 유전체(40)는 상기 전극(20) 보호를 위해 전극(20)을 내부에 포함하도록 설치되는데 이는 플라즈마에 대한 내성이 있고 가공성이 우수하며 물리화학적·전기적으로 안정한 물질인 폴리이미드(polyimide)가 많이 사용되며, 상기 지지대(50)는 전극(20)과 유전체(40)을 지지하기 위하여 설치되는데 전도성이 우수한 알루미늄 소재가 주로 사용된다. The electrostatic chuck 100 serves to stably hold the wafer W in the process and prevents the wafer W from overheating during the plasma process. The electron is applied to the voltage applied from the power supply unit 30. By the electrode 20 is generated by the electrostatic attraction, the latter is in charge of the cooling means 60 formed on the lower surface of the wafer (W) to the supply line to move the cooling gas, such as helium. On the other hand, the dielectric 40 is installed to include the electrode 20 to protect the electrode 20, which is a polyimide that is resistant to plasma, has excellent processability, and is a physicochemically and electrically stable material. Is used a lot, the support 50 is installed to support the electrode 20 and the dielectric 40 is mainly used aluminum material having excellent conductivity.

본 발명에서는 별도의 냉각가스 누설 방지링(70)이 설치된다. 이는 도 2에 도시된 바와 같이, 유전체(40)의 외주면을 따라서 유전체(40)에 밀착되게 설치되는데, 연성이 우수한 고무 재질의 오링 등을 사용할 수 있다. 도 2의 확대도를 참조하면, 냉각가스 누설 방지링(70)의 상하두께는 유전체(40) 보다 두꺼워서, 웨이퍼 (W)가 로딩되는 경우 먼저 상기 냉각가스 누설 방지링(70)의 머리부분에 접하게 된다. 이 후 웨이퍼(W)는 최종 높이까지 하강하게 되는데, 이 때 고무 재질의 냉각가스 누설 방지링(70)은 직경이 커지면서 높이는 낮아지고 바깥쪽으로 팽창하다가, 최종 상태에서는 바깥쪽으로 팽창된 부분이 오히려 안쪽으로의 탄성력으로 작용하게되어 냉각가스 누설 방지링(70)은 웨이퍼(W)에 밀착 결합된다. 따라서 웨이퍼(W)와 유전체(40)간에는 미세한 틈도 없이 완전히 봉쇄되고, 냉각수단(60)을 이동하는 냉각가스가 외부로 누설될 수 없게 된다. 상기 냉각가스 누설 방지링(70)을 안정적으로 설치하기 위해, 지지대(50)의 상면 유전체(40)의 외주면을 따라 장착홈(51)을 형성함으로써 상기 장착홈(51)에는 냉각가스 누설 방지링(70)이 장착되도록 한다. 상기 장착홈(51)을 사용하는 이외에도 링(70)을 지지대(50)에 직접 접착하거나 하여 다양한 주지관용의 수단을 이용하여 설치할 수 있다.
In the present invention, a separate cooling gas leakage prevention ring 70 is installed. As shown in FIG. 2, it is installed in close contact with the dielectric 40 along the outer circumferential surface of the dielectric 40, and an O-ring made of a rubber material having excellent ductility may be used. Referring to the enlarged view of FIG. 2, the upper and lower thicknesses of the cooling gas leakage preventing ring 70 are thicker than those of the dielectric 40, so that when the wafer W is loaded, the head of the cooling gas leakage preventing ring 70 is first placed. You will come across. After that, the wafer (W) is lowered to the final height. At this time, the rubber cooling gas leakage prevention ring 70 increases in diameter and expands outward as the diameter thereof increases. It acts as an elastic force to the cooling gas leakage preventing ring 70 is tightly coupled to the wafer (W). Therefore, the wafer W and the dielectric 40 are completely sealed without a minute gap, and the cooling gas moving the cooling means 60 cannot leak to the outside. In order to stably install the cooling gas leakage preventing ring 70, the mounting groove 51 is formed along the outer circumferential surface of the upper surface dielectric 40 of the support 50 so that the cooling gas leakage preventing ring is installed in the mounting groove 51. Allow 70 to be mounted. In addition to using the mounting groove 51, the ring 70 may be directly attached to the support 50 or installed using various means for the main pipe.

이와 같은 구성을 통하여, 공정이 개시되어 웨이퍼(W)가 반입되어 정전척(100)에 배치되면 전원부(30)의 작동으로 전극(20)에 전압이 인가되면서 웨이퍼(W)가 고정되고, 공정 중에는 공정챔버(10)에 고주파 파워가 인가되어 공정가스를 플라즈마 상태로 만들어서 웨이퍼(W) 표면에 반응시키며, 이 때 고온의 웨이퍼(W)가 과열되는 것을 방지하기 위해 웨이퍼(W)의 하면에 구비된 냉각수단(60)에서 냉각가스를 이용하여 웨이퍼(W)의 적정 온도를 유지해야 하는데, 웨이퍼(W)가 냉각가스 누설 방지링(70)에 밀착되어 웨이퍼(W)와 정전척(100)의 사이는 완전히 밀폐되어 냉각가스가 누설되지 않으므로 안정적인 웨이퍼(W) 온도 조절이 가능하다.
Through such a configuration, when the process is started and the wafer W is loaded and disposed on the electrostatic chuck 100, the wafer W is fixed while the voltage is applied to the electrode 20 by the operation of the power supply unit 30. During the process, a high frequency power is applied to the process chamber 10 to make the process gas into a plasma state and react with the surface of the wafer W. At this time, the lower surface of the wafer W is prevented from being overheated. In the cooling means 60 provided with the cooling gas to maintain the proper temperature of the wafer (W), the wafer (W) is in close contact with the cooling gas leakage prevention ring 70, the wafer (W) and the electrostatic chuck (100) ) Is completely sealed and cooling gas does not leak, allowing stable wafer (W) temperature control.

본 발명 냉각가스 누설 방지링을 구비한 반도체 웨이퍼의 정전척에 대한 기술사상을 예시도면에 의거하여 살펴보았지만, 본 발명은 예시된 특정 장치에 한정되지 않고, 탄력 소재를 이용하여 웨이퍼와 정전척간의 갭을 최소화함으로써 웨이퍼의 온도가 유지될 수 있다는 원리를 응용하여, 해당 기술분야의 통상 지식을 가진 자라면 누구나 본 발명의 기술사상의 범주를 이탈하지 않는 범위내에서 다양하게 변형하거나 모방하여 사용할 수 있음은 자명하다.
Although the technical concept of the electrostatic chuck of the semiconductor wafer with the cooling gas leakage preventing ring of the present invention has been described based on the exemplary drawings, the present invention is not limited to the illustrated specific apparatus, and the elastic material is used between the wafer and the electrostatic chuck. By applying the principle that the temperature of the wafer can be maintained by minimizing the gap, anyone with ordinary skill in the art can use variously modified or imitated within the scope not departing from the scope of the technical idea of the present invention. It is self-evident.

이상에서 살펴 본 바와 같이, 본 발명 누설 방지링을 구비한 반도체 웨이퍼의 정전척에 의하면, 웨이퍼의 냉각가스 누설을 방지하고 웨이퍼의 과열을 방지할 수 있어, 웨이퍼의 전면에 걸쳐서 플라즈마 공정이 안정적으로 이루어져 신뢰성 높은 반도체 소자 제품을 제조할 수 있는 효과가 있다. As described above, according to the electrostatic chuck of the semiconductor wafer provided with the leakage preventing ring of the present invention, it is possible to prevent leakage of the cooling gas of the wafer and to prevent overheating of the wafer, so that the plasma process is stable over the entire surface of the wafer. There is an effect that can be made a highly reliable semiconductor device product.

Claims (4)

전압이 인가되어 웨이퍼를 정전인력으로 고정시키는 전극, 상기 전극을 내부에 포함하여 상기 전극을 보호하는 유전체, 상기 유전체의 하부에 위치하여 상기 전극과 유전체를 지지하는 지지대, 상기 유전체의 상부에 형성되며 웨이퍼 하면으로 냉각가스를 공급하여 플라즈마 공정 중 웨이퍼의 과열을 억제하는 냉각수단을 포함하는 냉각가스 누설 방지링을 구비한 반도체 웨이퍼의 정전척에 있어서,A voltage is applied to fix the wafer with an electrostatic force, a dielectric to protect the electrode by including the electrode therein, a support positioned at the bottom of the dielectric to support the electrode and the dielectric, and formed on the dielectric In the electrostatic chuck of the semiconductor wafer having a cooling gas leakage preventing ring including a cooling means for supplying a cooling gas to the lower surface of the wafer to suppress overheating of the wafer during the plasma process, 상기 지지대의 상면에는 상기 유전체의 외주면을 따라 장착홈이 형성되고 상기 장착홈에는 냉각가스 누설 방지링이 장착되어, 웨이퍼와 유전체 사이의 이격을 최소화함으로써 냉각가스의 누설을 방지하도록 이루어진 것을 특징으로 하는 냉각가스 누설 방지링을 구비한 반도체 웨이퍼의 정전척.A mounting groove is formed on an upper surface of the support along the outer circumferential surface of the dielectric, and a cooling gas leakage preventing ring is mounted on the mounting groove to prevent leakage of the cooling gas by minimizing the separation between the wafer and the dielectric. Electrostatic chuck of semiconductor wafer with cooling gas leakage prevention ring. 제 1항에 있어서, 상기 냉각가스 누설 방지링은 고무 재질인 것을 특징으로 하는 냉각가스 누설 방지링을 구비한 반도체 웨이퍼의 정전척.2. The electrostatic chuck of claim 1, wherein the cooling gas leakage preventing ring is made of rubber. 제 1항 또는 제 2항에 있어서, 상기 유전체는 폴리이미드 재질인 것을 특징으로 하는 냉각가스 누설 방지링을 구비한 반도체 웨이퍼의 정전척.3. The electrostatic chuck of claim 1, wherein the dielectric is made of polyimide. 제 3항에 있어서, 상기 지지대는 알루미늄 재질인 것을 특징으로 하는 냉각가스 누설 방지링을 구비한 반도체 웨이퍼의 정전척.4. The electrostatic chuck of claim 3, wherein the support is made of aluminum.
KR1020040117099A 2004-12-30 2004-12-30 Electrostatic chuck of semiconductor wafers with cooling gas leakage prevention ring Withdrawn KR20060079332A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101104064B1 (en) * 2009-08-13 2012-01-12 주식회사 테스 Substrate processing apparatus
KR101110934B1 (en) * 2007-07-13 2012-03-16 어플라이드 머티어리얼스, 인코포레이티드 High temperature cathode for plasma etching
CN115243495A (en) * 2022-06-29 2022-10-25 上海森桓新材料科技有限公司 Semiconductor equipment electrostatic adsorption dish protection device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101110934B1 (en) * 2007-07-13 2012-03-16 어플라이드 머티어리얼스, 인코포레이티드 High temperature cathode for plasma etching
KR101104064B1 (en) * 2009-08-13 2012-01-12 주식회사 테스 Substrate processing apparatus
CN115243495A (en) * 2022-06-29 2022-10-25 上海森桓新材料科技有限公司 Semiconductor equipment electrostatic adsorption dish protection device
CN115243495B (en) * 2022-06-29 2023-10-24 上海森桓新材料科技有限公司 Semiconductor device electrostatic adsorption disk protection device

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