KR20060054514A - Dry etching equipment - Google Patents

Abstract

Dry etching apparatus is disclosed.

The disclosed dry etching apparatus includes a reaction chamber in which a flexible substrate is accommodated therein; An upper electrode installed above the reaction chamber; A lower electrode disposed below the reaction chamber; A power supply device supplying predetermined power to the upper electrode and the lower electrode; A gas supply unit supplying a reaction gas to the flexible substrate; And a suction unit configured to apply the suction force to the flexible substrate to keep the flexible substrate flat. In addition, the dry etching apparatus may include a bias unit for accelerating ions in the plasma by applying a bias to the plasma.

According to the dry etching apparatus according to the present invention, a suction hole is provided to keep the flexible substrate flat during the etching process, and a bias electrode is provided to enhance the collision of ions or the like with respect to the flexible substrate. Therefore, there is an advantage that the flexible substrate can be etched uniformly and efficiently.

Description

Dry etching apparatus

1 is a view showing the configuration of a dry etching apparatus of the present invention according to the first embodiment.

2 is a view showing the configuration of a dry etching apparatus of the present invention according to a second embodiment.

3 is a view showing a configuration of a bias unit provided in the dry etching apparatus of the present invention according to the second embodiment.

4 is a view showing the configuration of the dry etching apparatus of the present invention according to the third embodiment.

<Explanation of symbols for the main parts of the drawings>

10 dry etching apparatus 11: reaction chamber

12: upper electrode 13: lower electrode

14: suction hole 15: flexible substrate

16: power 17: plasma

20: bias portion 21: bias power

22 bias electrode 23 through hole

The present invention relates to a dry etching apparatus, and more particularly, to a dry etching apparatus in which the flexible substrate can be uniformly etched.

Dry etching uses ions, electrons, atoms, radicals, etc. generated by injecting a reaction gas into a high-frequency applied chamber to activate a high energy state. It is a chemically or physically carved etch. In order to manufacture a semiconductor device, the dry etching process is performed together with a photo process and a thin film process.

Republic of Korea Patent Publication No. 10-2002-0002787, the name "dry etching apparatus" discloses a conventional dry etching apparatus used in the manufacture of semiconductor devices.

In the conventional dry etching apparatus as described above, an etching object is generally mounted on a lower substrate installed under the reaction chamber, and plasma is generated to etch the etching object into a desired shape.

Meanwhile, flexible substrates such as plastic substrates have recently been widely used in the field of mobile displays, which are highly deformable. Therefore, when the flexible substrate is mounted on the lower substrate of the dry etching apparatus to etch, bending deformation occurs. When the flexible substrate is etched in the bending deformation state as described above, the flexible substrate is not uniformly etched as a whole. In particular, when etching a material having a low selectivity, if uniform etching cannot be performed due to the bending deformation as described above, etching itself becomes impossible.

In addition, the flexible substrate, particularly the plastic substrate, is an insulator, so that ions and the like are filled on the plastic substrate during the dry etching process. Then, a repulsive force is applied between the charged ions and the ions in the plasma, thereby preventing the ions and the like in the plasma from accessing the plastic substrate. Therefore, the collision of the ions or the like with the plastic substrate is not made efficiently, and the etching efficiency is lowered.

An object of the present invention is to provide a dry etching apparatus that can be etched uniformly as a whole by preventing bending deformation of a flexible substrate.

In addition, another object of the present invention to provide a dry etching apparatus that can increase the etching efficiency by improving access to a flexible substrate, such as ions in the plasma during the etching process.

The dry etching apparatus according to the present invention includes a reaction chamber in which a flexible substrate is accommodated therein; An upper electrode installed above the reaction chamber; A lower electrode disposed below the reaction chamber; A power supply device supplying predetermined power to the upper electrode and the lower electrode; A gas supply unit supplying a reaction gas to the flexible substrate; And a suction part configured to apply the suction force to the flexible substrate to keep the flexible substrate flat.

Dry etching apparatus of the present invention according to another embodiment is a reaction chamber in which a flexible substrate is accommodated therein; Upper and lower electrodes installed on upper and lower portions of the reaction chamber; A power supply device supplying predetermined power to the upper electrode and the lower electrode; A gas supply unit supplying a reaction gas to the flexible substrate to form a plasma; And a bias unit for accelerating ions in the plasma by applying a bias to the plasma.

Dry etching apparatus according to another embodiment of the present invention provides a reaction chamber in which a flexible substrate is accommodated therein, upper and lower electrodes installed on and under the reaction chamber, and predetermined power to the upper electrode and the lower electrode. And a power supply device for supplying the gas, and a gas supply part for supplying the reaction gas to the flexible substrate, wherein the etching is performed by plasma formed by applying power to the reaction gas. A suction part which keeps the flexible substrate flat; And a bias unit configured to accelerate a ion in the plasma by applying a bias to the plasma on the flexible substrate.

Preferably, the suction force is greater than the restoring force of the flexible substrate.

The suction part may include a plurality of suction holes. The suction hole may be provided in the lower electrode. The suction hole is preferably distributed evenly on the lower electrode. In addition, the suction hole is preferably distributed on a whole surface in contact with the flexible substrate. In addition, the suction hole is preferably a fine hole.

The bias unit may include a bias power supply and a bias electrode configured to apply a bias current applied from the bias power supply to the plasma.

The bias electrode may include a plurality of through holes through which ions in the plasma pass. In addition, the bias electrode may form a lattice shape. In addition, the bias electrode is preferably located above the flexible substrate.

According to the dry etching apparatus according to the present invention, a suction hole is provided to keep the flexible substrate flat during the etching process, and a bias electrode is provided to enhance the collision of ions or the like with respect to the flexible substrate. Therefore, the flexible substrate can be etched uniformly and efficiently.

Hereinafter, a dry etching apparatus according to a preferred embodiment of the present invention with reference to the accompanying drawings will be described in detail. Like reference numerals in the following drawings indicate like elements.

1 is a view showing the configuration of the dry etching apparatus of the present invention according to the first embodiment.

Referring to FIG. 1, the dry etching apparatus 10 according to the present embodiment includes a reaction chamber 11, an upper electrode 12 and a lower electrode 13 provided inside the reaction chamber 11, and And a power source 16 for supplying electricity to the upper electrode 12 and the lower electrode 13. Reference numeral 17 in the drawings is a plasma (plasma) formed in the reaction chamber 11 to be etched.

The reaction chamber 11 is a space where etching is performed and is sealed to the outside.

The upper electrode 12 and the lower electrode 13 are two parallel plate electrodes provided on the upper and lower portions of the reaction chamber 11, respectively. The upper electrode 12 and the lower electrode 13 are connected to the power source 16 and are inside the reaction chamber 11. Supplies electricity to generate plasma. In addition, a flexible substrate 15, for example, a plastic substrate, that is an etching target is mounted on the upper surface of the lower electrode 13.

According to the present exemplary embodiment, a plurality of suction holes 14 are formed in the lower electrode 13 to apply the suction force to the flexible substrate 15 to keep the flexible substrate 15 flat. The suction hole 14 serves as a passage for transmitting the suction force generated by a suction device (not shown) separately provided to the flexible substrate 15. The suction device and the suction hole 14 are included in a suction part for applying a suction force to the flexible substrate 15.

The operation of the dry etching apparatus 10 according to the present invention configured as described above will be briefly described.

First, the flexible substrate 15 is mounted on the top surface of the lower electrode 13. Then, a reactive gas is injected into the reaction chamber 11 from a gas supply unit (not shown), and then the upper electrode ( 12) and the lower electrode 13 to supply electricity through the power source (16). Here, the upper electrode 12 and the lower electrode 13 are generally provided with RF power of 13.56 MHz. Then, a plasma 17 is formed between the upper electrode 12 and the flexible substrate 15, and the flexible substrate 15 is etched by the plasma 17.

At this time, the suction force generated in the suction device (not shown) is transmitted to the flexible substrate 15 through the suction hole 14, so that the flexible substrate 15 is in close contact with the lower electrode 13. Here, in order for the flexible substrate 15 to be in close contact with the lower electrode 13, the suction force must be greater than the restoring force of the flexible substrate 15 to bend and deform. Since the lower electrode 13 is a parallel plate electrode, the flexible substrate 15 in close contact with the lower electrode 13 is kept flat. Thus, the flexible substrate 15 is uniformly etched throughout.

Here, the suction hole 14 is preferably distributed on the whole surface in contact with the flexible substrate (15). In addition, the suction hole 14 may be uniformly distributed in the lower electrode 13. When the suction hole 14 is distributed as described above, the suction force may be uniformly transmitted to the entire surface of the flexible substrate 15 through the suction hole 14, so that the flexible substrate 15 is more effectively flattened. Is maintained.

Meanwhile, as the suction hole 14 is formed, a portion of the flexible substrate 15 in contact with the suction hole 14 may be sucked and deformed into the suction hole 14 by a predetermined depth by the suction force. . When the deformation occurs as described above, the flexible substrate 15 is not kept flat, so that etching is not performed properly. Accordingly, the suction hole 14 may be formed as a micro hole so that the flexible deformation of the flexible substrate 15 may be minimized by the suction force.

In the present embodiment, the suction hole 14 is formed in the lower electrode 13, but the present invention is not limited thereto. That is, when the flexible substrate 15 is mounted on a member other than the lower electrode 13, the suction hole 14 may be formed in the member.

2 is a view showing the configuration of the dry etching apparatus of the present invention according to the second embodiment.

Referring to FIG. 2, the dry etching apparatus 10 according to the present embodiment includes a reaction chamber 11, an upper electrode 12 and a lower electrode 13 provided inside the reaction chamber 11, and the upper portion. And a power source 16 for supplying electricity to the electrode 12 and the lower electrode 13. The flexible substrate 15 is mounted on the top surface of the lower electrode 13. After the reaction gas is injected into the reaction chamber 11, the plasma is supplied between the upper electrode 12 and the flexible substrate 15 by electricity supplied to the upper electrode 12 and the lower electrode 13. 17 is formed and etching is performed.

According to the present embodiment, the dry etching apparatus 10 includes a bias unit 20 for accelerating ions in the plasma 17 by applying a bias to the plasma 17. The bias unit 20 includes a bias electrode 22 provided between the upper electrode 12 and the flexible substrate 15, a plurality of through holes 23 formed in the bias electrode 22, and the A bias power supply 21 for providing electricity to the bias electrode 22 is provided.                     

Since the through-holes 23 are passages of ions or the like that come out of the plasma 17 and collide with the flexible substrate 15, a plurality of through-holes 23 may be formed in the bias electrode 22. Also, for the same reason, the through hole 23 may have a lattice shape.

The bias electrode 22 accelerates ions in the plasma by electricity supplied by the bias power source 21, which will be described with reference to FIG. 3.

3 is a view showing the configuration of a bias unit included in the dry etching apparatus of the present invention according to the second embodiment.

Referring to FIG. 3, the bias unit 20 according to the present exemplary embodiment includes a bias power supply 21, a bias electrode 22, and a plurality of through holes 23 formed in the bias electrode 22. . In the drawing, reference numeral 24 denotes ions charged in the flexible substrate 15 during the etching process, and reference numeral 25 denotes ions that exit the plasma 17 and collide with the flexible substrate 15. Here, for the convenience of explanation, reference numerals 24 and 25 are represented by cations.

As described above, the etching process is performed by the cation 25 from the plasma 17 impacting a predetermined portion on the flexible substrate 15. The cation 25 that has collided with the flexible substrate 15 is discharged to the outside through the lower electrode 13. However, as the etching process proceeds gradually, some of the cations 25 which have been impacted are not discharged to the outside through the lower electrode 13, but a phenomenon occurs in which the upper portion of the flexible substrate 15 is charged. . Then, a repulsive force is generated between the cation 24 charged in the flexible substrate 15 and the cation 25 coming out of the plasma 17 and approaching the collided substrate 15 to collide with the flexible substrate 15. ) Collision cannot be performed properly, and the etching efficiency is lowered.

In this embodiment, the bias substrate 22 is provided above the flexible substrate 15 to accelerate the cation 25 so that the cation 25 can be smoothly impacted. In detail, the bias substrate 22 is connected to an anode of the bias power source 21 to become an anode, and the bias substrate 22 exits from the bias substrate 22 and the plasma 17 and passes through the through hole 23. Repulsive force acts between the cations 25. Accordingly, the cation 25 is accelerated toward the flexible substrate 15 by the repulsive force, thereby overcoming the repulsive force acting between the cations 24 charged in the flexible substrate 15 and the flexible substrate 15. (15) will crash. Therefore, it is possible to reduce the decrease in the etching efficiency by the cation 24 charged in the flexible substrate 15.

4 is a view showing the configuration of the dry etching apparatus of the present invention according to the third embodiment.

Referring to FIG. 4, the dry etching apparatus 10 according to the present exemplary embodiment includes a plurality of suction holes 14 formed in the lower electrode 13 and a bias electrode 22 provided on the flexible substrate 15. .

In this embodiment, by being configured as described above, the dry etching apparatus 10 transmits a suction force to the flexible substrate 15 through the suction hole 14 to keep the flexible substrate 15 flat. In addition, the dry etching apparatus 10 accelerates ions, etc., exiting from the plasma 17 toward the flexible substrate 15 by the bias electrode 22 to efficiently collide with the flexible substrate 15. To be done.

According to the dry etching apparatus according to the present invention configured as described above, a plurality of suction holes are formed in the lower electrode on which the flexible substrate is mounted to transfer suction force to the flexible substrate, thereby keeping the flexible substrate flat during the etching process. . Therefore, there is an effect that the flexible substrate can be etched uniformly as a whole.

In addition, according to the dry etching apparatus of the present invention, a bias electrode is provided above the flexible substrate, and the collision of the ions or the like with respect to the flexible substrate is enhanced by accelerating ions and the like that exit the plasma and are directed to the flexible substrate. Therefore, there is an effect that the flexible substrate can be etched uniformly and efficiently.

Although the present invention has been described with reference to the embodiments shown in the drawings, this is merely illustrative, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical protection scope of the present invention will be defined by the appended claims.

Claims (23)

A reaction chamber in which a flexible substrate is accommodated therein; An upper electrode installed above the reaction chamber; A lower electrode disposed below the reaction chamber; A power supply device supplying predetermined power to the upper electrode and the lower electrode; A gas supply unit supplying a reaction gas to the flexible substrate; And And a suction part which applies a suction force to the flexible substrate to keep the flexible substrate flat. The method of claim 1, And the suction force is greater than the restoring force of the flexible substrate. The method of claim 1, And the suction part includes a plurality of suction holes. The method of claim 3, wherein The suction hole is a dry etching apparatus, characterized in that provided in the lower electrode. The method of claim 4, wherein The suction hole is a dry etching apparatus, characterized in that uniformly distributed on the lower electrode. The method of claim 3, wherein And the suction hole is distributed on a whole surface in contact with the flexible substrate. The method of claim 3, wherein Dry suction device, characterized in that the suction hole is a fine hole. A reaction chamber in which the flexible substrate is accommodated therein; Upper and lower electrodes installed on upper and lower portions of the reaction chamber; A power supply device supplying predetermined power to the upper electrode and the lower electrode; A gas supply unit supplying a reaction gas to the flexible substrate to form a plasma; And And a bias unit for accelerating ions in the plasma by applying a bias to the plasma. The method of claim 8, And the bias unit includes a bias power supply and a bias electrode configured to apply a bias current applied from the bias power supply to the plasma. The method of claim 9, And the bias electrode has a plurality of through holes through which ions in the plasma pass. The method of claim 9, The bias electrode is a dry etching apparatus, characterized in that to form a lattice (lattice) shape. The method of claim 9, And the bias electrode is located above the flexible substrate. A reaction chamber in which the flexible substrate is accommodated, an upper and lower electrodes provided above and below the reaction chamber, a power supply for supplying predetermined power to the upper electrode and the lower electrode, and a reaction gas to the flexible substrate. In a dry etching apparatus having a gas supply unit for supplying, the etching is performed by a plasma formed by applying power to the reaction gas, A suction part which applies the suction force to the flexible substrate to keep the flexible substrate flat; And And a bias unit for accelerating ions in the plasma by applying a bias to the plasma from the upper side of the flexible substrate. The method of claim 13, And the suction force is greater than the restoring force of the flexible substrate. The method of claim 13, And the suction part includes a plurality of suction holes. The method of claim 15, The suction hole is a dry etching apparatus, characterized in that provided in the lower electrode. The method of claim 16, The suction hole is a dry etching apparatus, characterized in that uniformly distributed on the lower electrode. The method of claim 15, And the suction hole is distributed on a whole surface in contact with the flexible substrate. The method of claim 15, Dry suction device, characterized in that the suction hole is a fine hole. The method of claim 13, And the bias unit includes a bias power supply and a bias electrode configured to apply a bias current applied from the bias power supply to the plasma. The method of claim 20, And the bias electrode has a plurality of through holes through which ions in the plasma pass. The method of claim 20, The bias electrode is a dry etching apparatus, characterized in that forming a lattice (lattice) shape. The method of claim 20, And the bias electrode is located above the flexible substrate.

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