KR20060003150A - Blank Mask and Photomask and Manufacturing Method Thereof - Google Patents

Abstract

The present invention relates to a technique for manufacturing a blank mask used for fabricating a photomask using a laser and an electron beam of monochromatic light. To this end, the present invention provides a phase shift film (2) and a light shielding film (3) on a transparent substrate (1). And a blank mask formed by laminating all or one or more selected films from the anti-reflection film 4 and surface-treating with an organic material containing silicon to form the monomolecular film 5 and then coating the resist film 6 and a method of manufacturing the same. And a photomask manufactured using the blank mask and a method of manufacturing the same.

Accordingly, the present invention improves the adhesion between the resist film and the lower layer film by adjusting the concentration of the organic material containing silicon on the surface of any one of the phase inversion film, the light shielding film, and the anti-reflection film and occurs at the interface between the resist film and the lower layer film. Since the footing 70 and the skin layer 71 are removed, an excellent effect is provided in the photomask manufacturing process, so that a blank mask suitable for semiconductor integrated circuits and high integration requiring micronization can be manufactured.

Blank Mask, Photomask, Adhesive, Skin Layer, Footing

Description

Blank mask and photo mask and method for manufacturing thereof

1 is a schematic view showing a binary blank mask manufacturing process according to the first embodiment of the present invention.

2 is a schematic view showing a binary photomask manufacturing process according to Example 1 of the present invention.

3 is a schematic view showing a phenomenon in the exposure process according to the first embodiment of the present invention.

4 is a schematic view showing a phase inversion blank mask manufacturing process according to Example 2 of the present invention.

5 is a schematic view showing a phase inversion photomask manufacturing process according to Example 2 of the present invention.

6 is a schematic view showing a phase inversion blank mask manufacturing process according to Example 3 of the present invention.

7 is a schematic view showing a phase inversion photomask manufacturing process according to Example 3 of the present invention.

8 is a schematic view showing a cross section of a binary blank mask manufactured by a conventional method.

9 is a schematic view showing a phenomenon at the time of an exposure process for explaining a conventional problem.

10 is a schematic diagram showing a footing and a skin layer for explaining a conventional problem.

[Description of Symbols for Main Parts of Drawing]

1: transparent substrate 2: phase inversion film

3: shading film 4: anti-reflection film

5: monomolecular film 6: resist film

40: Binary Blank Mask produced by the present invention

41: Binary photomask produced by the present invention

50: phase inversion blank mask produced by the present invention

51: phase inversion photomask prepared by the present invention

70: resist footing 71: skin layer

72: notching

The present invention relates to a blank mask and a photomask manufacturing method, and more particularly, to a blank mask composed of a phase inversion film, a light shielding film, and an antireflection film sequentially laminated on a transparent substrate, or optionally one or more films. The present invention relates to a blank mask and a photomask manufacturing method capable of manufacturing a photomask that forms a pattern of excellent precision by performing a surface treatment with an included organic material.

Photolithography (Photo-Lithography) technology using a photomask is essentially used to form a fine pattern for a semiconductor integrated circuit and a TFT-LCD.

The photomask is a binary blank mask in which a chromium-based light shielding film and an antireflection film formed by a reactive sputtering method or the like are deposited on a transparent substrate, and then a resist film formed by spin coating or capillary coating is stacked. Alternatively, a resist film formed by spin coating or capillary coating may be deposited on a transparent substrate by depositing a chromium-based light shielding film and an antireflection film formed on the molybdenum phase inversion film formed by a reactive sputtering method or the like on the transparent substrate. A photomask in which a predetermined pattern is formed on the laminated phase inversion blank mask is used.

In the case of using a binary blank mask in such a photomask, the resist film is selectively exposed to a predetermined pattern using a laser or an electron beam of monochromatic light, and then a resist pattern having a predetermined pattern is formed through a developing process using a developer. . At this time, in the case of the positive resist, the exposed part is removed after the developing process, and in the case of the negative resist, the exposed part is left after the developing process to form a resist pattern. Subsequently, the light-shielding film and the anti-reflection film are wet-etched using an etching solution using a resist film having a pattern formed thereon as a masking or a predetermined pattern is formed on the light-shielding and anti-reflection film by dry etching using a gas, and then the resist film is finally removed. A photomask in which a pattern is formed on a predetermined light shielding film and an antireflection film on a transparent substrate can be manufactured.

In this case, the chromium-based light shielding film blocks light to form the final pattern of the semiconductor device, but since the light reflectance of the light shielding film is high, the light reflected from the wafer substrate used in manufacturing the device is reflected to the photomask through the projection lens. In order to prevent the reflected light from being reflected back to the wafer substrate, an anti-reflection film containing basic materials such as chromium oxide (CrO), chromium oxynitride (CrON), and chromium carbide oxynitride (CrCON) is mainly formed. In addition, the light shielding film and the phase inversion film are also produced by containing a basic material.

In the blank mask having a film containing such a basic material, a resist film is formed using a resist such as a photoresist, an E-beam resist, and a chemically amplified resist, and in particular, chemical amplification. In the photoresist process using an electron beam, a strong acid (H ⁺ ) is formed by exposure, and the strong acid acts as a catalyst so that diffusion and decomposition reactions of the strong acid occur in series, thereby forming a high resolution pattern.

However, in the process of fabricating a photomask using a blank mask having a film containing a chemically amplified resist and a basic material as described above, if the pattern is developed after exposure to the chemically amplified resist, a skin layer and a footing ( Footing) is formed so that the developing solution is not developed in the exposed area. This suppresses the diffusion of the strong acid because the bond between the basic material of the film containing the basic material and the strong acid generated from the chemically amplified resist occurs at the interface. The skin layer and the footing formed as described above do not proceed smoothly in the wet etching process, so it is difficult to form a pattern. In addition, in order to proceed with the wet etching process, it is difficult to control productivity and control critical dimensions because the process must be performed after the skin layer is forcibly removed by adding an ashing process. In addition, since the resist cannot be smoothly removed by the skin layer present on the film, it may act as a main cause of the most important defects in photomask fabrication.

That is, as shown in the conventional photomask manufacturing process diagram of FIGS. 8 to 10, when the photomask is manufactured using the binary blank mask 60 as shown in FIG. 8, the resist as shown in FIG. The film 6 forms a strong acid at the exposed portion, thereby forming a bond with the electrons provided from the basic antireflective film 4 so that the strong acid generated from the resist is neutralized to form a strong acid at the interface between the resist and the antireflective film. Since diffusion and decomposition reactions do not occur, in the case of a positive resist, a resist footing 70 is generated as shown in FIG. 10 (a) or a skin layer 71 is generated as shown in FIG. 10 (b) and a negative resist is formed. In this case, notching (72) occurs as shown in FIG.

Accordingly, the present invention has been made to solve the above problems, the present invention is to remove the adhesion and skin layer or notching generated at the interface on the phase inversion film or light-shielding film or the anti-reflection film to form an interface with the resist film By ensuring the reproducibility of the critical dimension, it suppresses the occurrence of white defects of the anti-reflection film due to the weak adhesion in the wet etching process during photomask manufacturing, helps the smooth etching, and eliminates unnecessary etching process during the dry etching process. Ultimately, it is an object of the present invention to provide a high quality blank mask and a method of manufacturing the same, and a method of manufacturing the photomask having improved reliability using the blank mask and minimizing a defect generation factor.

A feature of the blank mask according to the present invention for achieving the above object is a resist film formed by laminating a phase inversion film, a light shielding film, or at least one selected from the group consisting of an antireflection film on a transparent substrate, and coating a resist on the film. The blank mask comprising: a monomolecular film formed by surface treatment with an organic material containing silicon on a film forming an interface with the resist film.

In addition, a feature of the blank mask manufacturing method according to the present invention for achieving the above object is a method for producing a blank mask by sequentially laminating all or at least one selected from a phase inversion film, a light shielding film, an antireflection film on a transparent substrate. The method may include a surface modification step of forming a monomolecular film by performing surface treatment with an organic material containing silicon on all or at least one selected from among the phase shift film, the light shield film, and the anti-reflection film.

In particular, when the blank mask manufacturing method according to the present invention is used in the binary blank mask manufacturing process, preferably a1) forming a transparent substrate; b1) forming a light shielding film on the transparent substrate formed in step a1); c1) forming an anti-reflection film on the light shielding film formed in step b1); d1) performing surface treatment with an organic material containing silicon on the antireflection film formed in step c1); e1) a step of manufacturing a blank mask by coating a resist on the antireflection film subjected to the surface treatment with an organic material in step d1) may be sequentially performed.

In particular, when the blank mask manufacturing method according to the present invention is used in the phase inversion blank mask manufacturing process, preferably a1) forming a transparent substrate; a1-1) forming a phase reversal film on the transparent substrate formed in step a1); b1) forming a light shielding film on the phase inversion film formed in step a1-1); c1) forming an anti-reflection film on the light shielding film formed in step b1); d1) performing surface treatment with an organic material containing silicon on the antireflection film formed in step c1); e1) a step of manufacturing a blank mask by coating a resist on the antireflection film subjected to the surface treatment with an organic material in step d1) may be sequentially performed.

In the step a1), the transparent substrate is made of glass or quartz, and includes a 5-12 inch sized substrate having a transmittance of 90% or more.

In the a1-1) step, the phase inversion film is formed by sputtering in a vacuum chamber in which an inert and active gas is introduced using a metal as a matrix, and cobalt (Co), tantalum (Ta), tungsten (W), Molybdenum (Mo), Chromium (Cr), Vanadium (V), Palladium (Pd), Titanium (Ti), Niobium (Nb), Zinc (Zn), Hafnium (Hf), Germanium (Ge), Aluminum (Al), It is characterized in that the film containing one or more selected from the group consisting of platinum (Pt), manganese (Mn), iron (Fe) and silicon (Si), the inert gas is argon (Ar), helium (He), At least one selected from the group consisting of neon (Ne) and xenon (Xe) is used, and the active gas is oxygen (O ₂ ), nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide At least one selected from the group consisting of (N ₂ O), nitric oxide (NO), nitrogen dioxide (NO ₂ ), ammonia (NH ₃ ) and methane (CH ₄ ) is used. And when the matrix of the phase inversion film is molybdenum silicide (MoSi) combination, molybdenum silicide (MoSiN), molybdenum silicide (MoSiO), molybdenum carbide (MoSiC), molybdenum carbide (MoSiCO), molybdenum carbide (MoSiCN) ), Molybdenum oxynitride silicide (MoSiON) and molybdenum oxynitride silicide (MoSiCON) film, the component content of 0 to 20 at% carbon, 0 to 60 at% oxygen, 0 to 60 at% nitrogen, 20 to silicon 60 at%, and the rest is a film of a component which is a metal. In particular, the phase inversion film may be a continuous film manufactured so that the components change from the transparent substrate to the upper layer, or a film composed of multiple layers of a low transmittance film for controlling the transmittance and a high transmittance film for controlling the phase inversion. In this case, the light blocking film and the anti-reflection film of steps b1) and c1) may have a structure in which nitrogen content is increased toward the transparent substrate, and may be a continuous film or a film composed of multiple layers.

In the step b1), the light shielding film is a film containing one or more selected from the group consisting of chromium (Cr), tungsten (W), tantalum (Ta), and titanium (Ti) based on a metal, and argon (Ar). ), At least one inert gas selected from helium (He), neon (Ne), and xeon (Xe), oxygen (O ₂ ), nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), and nitrous oxide Using a reactive sputtering method in a vacuum chamber in which at least one active gas selected from (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), ammonia (NH ₃ ) and methane (CH ₄ ) is introduced Is formed.

In the step b1), the light blocking film refers to a film made of chromium nitride (CrN), chromium carbide (CrC), or chromium carbide (CrCN) when the metal matrix is chromium.

In the formation of the light shielding film in step b1), the component may optionally have 0 to 20 at% of carbon, 0 to 60 at% of oxygen, and 0 to 60 at% of nitrogen, and the rest may have a metal ratio.

In the c1) step, the anti-reflection film is a film containing at least one selected from tungsten, tantalum, chromium, titanium, molybdenum silicide, etc. using a metal as a matrix, and at least one selected from argon, helium, neon, and xeon. Gas and oxygen (O ₂ ), nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), ammonia (NH ₃ ) , At least one active gas selected from methane (CH ₄ ) is formed using a reactive sputtering method in a vacuum chamber into which it is introduced.

The anti-reflection film in step c1) refers to a film that is chromium oxide (CrO), chromium oxynitride (CrON), or chromium carbide oxynitride (CrCON) when the mother metal is chromium.

In the step c1), the deposition of the anti-reflection film may be continuously performed without any part of the film, and the components may optionally include 0 to 20 at% of carbon, 0 to 60 at% of oxygen, 0 to 60 at% of nitrogen, and the remainder of the metal. Has

In the steps b1) and c1), the substrate may be heated to a predetermined temperature of about 80 to 300 ° C. as a method for improving adhesion and growth of the film. The heat treatment may be performed in consideration of stress relaxation and etching characteristics during reactive sputtering. (Annealing) can be heated to a constant temperature of about 200 ~ 400 ℃.

In step d1), a surface treatment is performed using an organic material containing silicon on the anti-reflection film in order to improve adhesion and remove the skin layer.

The solution for the surface treatment as the organic material containing silicon in step d1) is hexamethyldisilane, Hexamethyldisilane, Trimethylsilyl diethylamine, O-trimethylsily-acetate, O-trimethylsilylproprionate, O-trimet hylsilylbutyrate, Trimethylsilyltrifluoroacetate, Trimethylmethoxysilane, N-methyl-N- N-methyl-N-trimethyl-silytrifluoroacetamide, O-trimethylsilyacetylacetone, Isopropenoxytrimethylsilane, Trimethylsilyltrifluoroacetamide ), Methyltrimethylsilydimethylketone acetate ), Trimethylethoxysilane and the like can be used.

As a method for surface treatment as an organic material containing silicon in the step d1) is formed on the anti-reflection film using spin coating or vapor priming.

In the step d1) in the step of using a surface coating on the anti-reflection film spin coating method, the injection amount of the organic material containing silicon is used in the range of about 0.5 ~ 50 Pa and the rotation speed is formed to 10 ~ 3000rpm.

The temperature used in the process by the vapor priming method to the surface treatment on the anti-reflection film in step d1) is carried out in the range of 20 ~ 500 ℃, the gas used is Ar or N ₂ , the usage amount is 0.01 ~ An amount of 100 l / min is used, and the degree of vacuum is formed at a pressure of 760 mm Hg or less.

Here, before the surface treatment with the silicon-containing organic material, dehydration bake may be further performed in a range of 20 ° C. to 300 ° C. as a pretreatment step to remove moisture on the surface of the one or more selected membranes. .

The photoresist THMR-iP3500, THMR-iP3600, DPR-i7000 and electron beam resists EBR-9, PBS, ZEP-7000, and positive chemistry on the antireflection film surface-treated as an organic material containing silicon in step e1) It is formed by including a resist composed of alkali-soluble resins such as FEP-171, an amplified resist, and FEN-270, NEB-22, a negative chemically amplified resist, and PAG (Photo Acid Generator). At this time, the resist coating is formed by spin coating or capillary coating on the monomolecular film surface-treated with the organic material containing silicon, wherein the thickness of the resist is suitably 100 to 10,000Å. .

After the resist coating in step e1), a soft bake is performed in a range of about 50 to 250 ° C. using a hot plate.

In particular, when manufacturing a photomask using the blank mask according to the present invention, preferably, a2) exposing the blank mask prepared by the above process using a laser or electron beam of monochromatic light; b2) performing Post Exposure Bake on the blank mask exposed in step a2); c2) forming a resist pattern on the portion exposed in step b2 using a developing solution; d2) etching the light-shielding film and the anti-reflection film through a wet etching process or a dry etching process by using the resist pattern formed in step c2) as a masking; e2) removing and cleaning the resist film used for pattern formation in step d2) to prepare a photomask.

In the step a2), a pattern is formed using monochromatic light (193 to 365 nm) or electron beam (10 to 100 keV) in the case of an exposure source used in the exposure process of the photomask using the blank mask.

The post exposure bake temperature used in step b2) is 50-200 ° C. and the time is 1-30 minutes.

The developer for forming the pattern of the portion exposed in step c2) is used as an alkaline developer to form a resist pattern.

In the process of etching the light shielding film and the anti-reflection film by using the resist pattern formed in step d2) as a masking, an etching solution of CR-7 or CR-9 is used for wet etching and Cl ₂ + O ₂ gas for dry etching. The pattern is formed by a plasma method using.

The resist used in the pattern formation in step e2) uses a nanostrip solution or sulfuric acid (H ₂ SO ₄ ), the temperature is 30 ~ 100 ℃, time is about 10 ~ 60 minutes using the resist completely Remove

After removing the resist in step e2) includes a step of completely removing the contaminants and particles, etc. attached to the surface through the SPM and SC-1 process.

Hereinafter, in the detailed description of the present invention, the present invention will be described in detail with reference to the case of surface treatment with an organic material containing silicon only on the anti-reflection film and the phase inversion film, but the detailed description of the present invention is merely illustrative of the present invention. As such, it is to be used merely for the purpose of illustrating the invention and is not intended to be limiting or limit the scope of the invention, which is set forth in the claims. Therefore, those skilled in the art will understand that various modifications and equivalent other embodiments are possible from this. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

<Example 1>

1 to 2 are schematic cross-sectional views showing a process for producing a binary blank mask and a binary photomask according to Embodiment 1 of the present invention. At this time, in the following description, the same code | symbol is attached | subjected to the same or equivalent part, and the description is abbreviate | omitted.

Referring to FIG. 1A, argon, nitrogen, and carbon dioxide are selected on a 6-inch quartz substrate 1 and subjected to reactive sputtering to select chromium nitride (CrCN), which is a light shielding film, of 500 kPa. It was formed to a thickness. At this time, the composition of the chromium nitride chromium nitride (CrCN) is 10at% of carbon, 20at% of nitrogen, and the rest has a ratio of chromium.

Referring to FIG. 1B, chromium oxynitride (CrCON), an antireflection film 4, was formed to a thickness of 120 kPa by reactive sputtering using argon, nitrogen, oxygen, and carbon dioxide as targets of chromium on a light shielding film. . At this time, the composition of the anti-reflective film chromium oxynitride (CrCON) is 5at% of carbon, 30at% of oxygen, 20at% of nitrogen, and the rest has a ratio of chromium.

Referring to Figure 1c, using a hot plate that can maintain a vacuum on the anti-reflection film vaporized priming surface treatment of silicon-containing organic substances trimethylsilidiethylamine, hexamethyldisilane, O-trimethylsilyl acetate, etc. To form a monomolecular film 5 containing silicon. At this time, argon was used to prime the organic liquid containing silicon. At this time, argon was supplied at a capacity of 1 l / min at a pressure of 2 kg / cm 2, the temperature on the hot plate was 100 ° C., the surface treatment time was 30 seconds, and the vacuum degree was 760 mmHg.

Referring to FIG. 1D, after forming a resist film 6 having a thickness of 4000 Å using a spin coating method, a positive chemically amplified resist FEP-171 (FUJIFILM) is formed on an antireflective film having a silicon-containing monolayer. Soft bake on the plate. At this time, the temperature was 120 ℃ and the time was applied 20 minutes.

The binary blank mask 40 was manufactured through the above process.

Next, referring to FIG. 2A, after selectively exposing the resist film 6 to a predetermined pattern with an energy of 10 μC / cm 2 using an electron beam having an acceleration voltage of 50 keV, the post exposure bake is performed at 150 ° C. on a hot plate. It carried out for 20 minutes.

Next, referring to FIG. 2B, an alkaline developer NMD-W TMAH 2.38% (Tiokei) was developed by spraying for 70 seconds to form a resist pattern 6a of the exposed portion, whereby skin layer and footing were not formed. A resist pattern was formed.

Next, referring to FIG. 2C, using the resist pattern as a mask, the etching solution CR-7 (Scientec) is etched for 60 seconds using a spray method to form an antireflection film pattern 4b and a light shielding film pattern 3b.

Next, referring to FIG. 2D, a binary photomask in which unnecessary resist patterns are removed on a nanostrip (Scientech) using a dipping method at 70 ° C. for 30 minutes, and finally, the antireflection film pattern and the light shielding film pattern remain after the cleaning process. 41 is manufactured.

According to the invention of Example 1 as described above, with reference to FIG. 3, a strong acid is formed in the exposed portion of the resist film 6, and the basic antireflection film 4 is an organic material containing silicon. 5) is formed and surface modified, so that the monomolecular film blocks electrons provided from the basic material so that strong acid in the resist film is not formed at the interface of the anti-reflection film, and neutralization of the strong acid is suppressed, thereby securing a resist pattern having excellent shape. Can be. In addition, due to the monomolecular film of the organic material containing silicon, the surface energy of the antireflection film is lowered to decrease the polarity of the surface of the antireflection film, thereby making it hydrophobic to improve the uniformity of the resist film and the adhesion between the resist film and the antireflection film.

As a result, by manufacturing a high quality binary blank mask using a chemically amplified resist according to Example 1 of the present invention, a binary photomask is manufactured that ensures the reproducibility of the critical dimension, high dimensional accuracy, and improved reliability can do.

<Example 2>

4 to 5 are schematic cross-sectional views showing steps of manufacturing a phase inversion blank mask and a phase inversion photomask according to Embodiment 2 of the present invention.

Referring to FIG. 4A, molybdenum oxynitride oxynitride, which is a phase inversion film 2, is subjected to reactive sputtering using argon, nitrogen, and oxygen, targeting molybdenum silicide (MoSi) on a 6-inch quartz substrate 1. (MoSiON) was formed to a thickness of 950 kPa. At this time, the composition of the molybdenum oxynitride nitride (MoSiON) phase reversal film is 20at% oxygen, 20at% nitrogen, 50at% silicon and the remainder is the ratio of molybdenum.

Referring to FIG. 4B, chromium nitride (CrCN), which is a light shielding film 3, is formed to have a thickness of 700 kPa by reactive sputtering using argon, nitrogen, and oxygen as a target of chromium on the phase inversion film 2. It was. At this time, the composition of the chromium nitride chromium nitride (CrCN) is 10at% of carbon, 20at% of nitrogen, and the rest has a ratio of chromium.

Referring to FIG. 4C, reactive carbon sputtering was performed using argon, nitrogen, and carbon dioxide on a light shielding film to form chromium oxynitride (CrCON) as an antireflection film 4 to a thickness of 150 kPa. At this time, the composition of the anti-reflective film chromium oxynitride (CrCON) is 5at% of carbon, 30at% of oxygen, 20at% of nitrogen, and the rest has a ratio of chromium.

Referring to Figure 4d, using a hot plate that can maintain a vacuum on the anti-reflection film vaporized priming surface treatment of organic materials containing silicon trimethyl silidiethylamine, hexamethyl disilane, O-trimethyl silyl acetate, etc. The monomolecular film 5 containing silicon | silicone was formed. At this time, nitrogen was used to prime the organic liquid containing silicon. At this time, nitrogen was supplied at a capacity of 4 l / min at a pressure of 1 kg / cm 2, the temperature on the hot plate was 80 ° C., the surface treatment time was 60 seconds, and the vacuum degree was 600 mmHg.

Referring to FIG. 4E, after forming a resist film 6 having a thickness of 4000 kPa using a spin coating method, a positive chemically amplified resist FEP-171 (FUJIFILM) is formed on an antireflection film on which a monomolecular film containing silicon is formed. Soft bake on the plate. At this time, the temperature was 110 ℃ and the time was applied for 15 minutes.

The phase inversion blank mask 50 was manufactured through the above process.

Next, referring to FIG. 5A, the resist film 6 was selectively exposed to a predetermined pattern with an energy of 8 μC / cm 2 using an electron beam having an acceleration voltage of 50 keV, and then a post exposure bake was performed at 150 ° C.

Referring to FIG. 5B, an alkaline developer NMD-W TMAH 2.38% (Tiokei) was developed by spraying for 70 seconds to form a resist pattern 6a of the exposed portion, and a resist layer without skin layer and footing was formed. Formed.

5C, the antireflection film pattern 4b and the light shielding film pattern 3b are formed by dry etching for 500 seconds using Cl ₂ and O ₂ gas using a resist pattern as a masking.

Subsequently, referring to FIG. 5D, sulfuric acid is used for 30 minutes at 90 ° C. in a dipping method to remove unnecessary resist film, and then a cleaning process is performed to remove foreign substances.

Subsequently, referring to FIG. 5E, the light shielding layer pattern and the antireflective layer pattern may be used as masking to form a phase shift pattern 2b through dry etching using O 2 and SF 6.

5F, trimethylsilyldiethylamine, hexamethyldisilane, O-trimethylsilyl acetate, and the like, which are organic materials containing silicon, are used by using a hot plate capable of maintaining a vacuum on the antireflection film pattern 4a. Vapor priming surface treatment is performed to form a monomolecular film 10 containing silicon. At this time, argon was used to prime the organic liquid containing silicon. At this time, argon was supplied at a capacity of 3 l / min at a pressure of 1.5 kg / cm 2, the temperature on the hot plate was 85 ° C., the surface treatment time was 70 seconds, and the vacuum degree was 650 mmHg.

Subsequently, referring to FIG. 5G, the photoresist is spin-coated on the antireflection film pattern 4b on which the monomolecular film of the organic material containing silicon is formed by masking the light shielding film pattern and the antireflection film pattern. At this time, the formed resist film 9 was THMR-iP3500 (thiokei) and had a thickness of 5600 kPa.

Next, referring to FIG. 5H, the resist film 9 is selectively exposed to a predetermined pattern by applying 110 mJ / cm 2 of energy of a monochromatic light of 365 nm, and referring to FIG. 5I, a resist pattern of an exposed portion ( In order to form 9a), a resist pattern 9a was formed through a developing process by using an alkaline developer NMD-W TMAH 2.38% (thiokei) for 70 seconds in a spray method.

Subsequently, with reference to FIG. 5J, the resist pattern is masked to form the light shielding pattern 3c and the antireflection film pattern 4c, and the light shielding film pattern 3c and the antireflection film pattern are used by using O 2 and Cl 2 gas for 500 seconds in dry etching. (4c) was formed.

Subsequently, referring to FIG. 5K, in order to remove the unnecessary resist pattern 9a, the sulfuric acid was removed by using a dipping method at 90 ° C. for 20 minutes, and finally, the antireflection film pattern 4c and the light shielding film pattern 3c and phase were washed. The phase inversion photomask 51 in which the inversion film pattern 2b remains is manufactured.

As described above, according to the invention of Example 2, the antireflection film of the phase inversion blank mask is subjected to vapor priming with an organic material containing silicon to bond the strong acid and the basic material at the interface of the chemically amplified resist and the antireflection film. By blocking, a resist pattern having an excellent shape can be secured.

<Example 3>

6 to 7 are schematic cross-sectional views showing blank mask and photomask manufacturing processes according to the third embodiment of the present invention.

With reference to FIG. 6A, molybdenum nitride (MoSiN), a phase inversion film (2) of 800 두께, was formed by reactive sputtering using argon and nitrogen on a 6-inch quartz substrate 1 with chromium as a target. Formed. At this time, the composition of molybdenum nitride (MoSiN), which is the phase inversion film 2, is 30 at% of nitrogen, 60 at% of silicon, and the remainder has a ratio of molybdenum.

Referring to FIG. 6B, the monomolecular film 5 containing silicon was subjected to vapor priming surface treatment of trimethylsilidiethylamine, an organic material containing silicon, using a hot plate capable of maintaining a vacuum on the phase inversion film. Formed. At this time, argon was used to prime the organic liquid containing silicon. At this time, argon was supplied at a capacity of 6 l / min. At a pressure of 1.3 kg / cm 2, the temperature on the hot plate was 100 ° C., the surface treatment time was 60 seconds, and the vacuum degree was 700 mmHg.

Referring to FIG. 6C, after forming a NNB-22 (Sumitomo), which is a negative chemically amplified resist, on the phase shift layer on which the monomolecular film containing silicon is formed, by using a spin coating method, a resist film 6 having a thickness of 4000 Å is formed. Soft bake was performed on the plate. At this time, the temperature was 120 ℃ and the time was applied for 15 minutes.

The phase inversion blank mask 80 was manufactured through the above process.

Referring to FIG. 7A, after selectively exposing the resist film 6 to a predetermined pattern with an energy of 8 μC / cm 2 using an electron beam having an acceleration voltage of 50 keV, the post exposure bake is performed at 120 ° C. for 10 minutes on a hot plate. Was carried out. Next, referring to FIG. 7B, in order to form the resist pattern 6a of the exposed portion, an alkaline developer NMD-W TMAH 2.38% (Tiokei) was developed by spraying for 65 seconds so that notching was not formed. A resist pattern was formed.

Next, referring to FIG. 7C, a phase inversion film pattern 2b is formed by using O 2 and Cl 2 gas for 500 seconds in dry etching using a resist pattern as a masking.

Subsequently, referring to FIG. 7D, an unnecessary resist pattern is removed using a nanostrip (Scientech) by dipping for 20 minutes at 70 ° C., followed by a cleaning process, and finally, a photomask 81 in which a phase shift film pattern remains. ) Is manufactured.

As described above, according to the present invention of Example 3, the phase inversion film of the blank mask is vapor-primed surface treatment with an organic material containing silicon to block the binding of the strong acid and the basic material at the interface between the negative chemically amplified resist and the phase inversion film. As a result, a resist pattern having an excellent shape can be secured.

In addition, the wafer priming surface treatment lowers the surface energy of the phase inversion film, thereby lowering the polarity of the surface of the phase inversion film, thereby making it hydrophobic to improve the uniformity of the resist film, and improving adhesion to prevent white defects from occurring.

As a result, by producing a high quality blank mask using a chemically amplified resist, it is possible to manufacture a photomask capable of ensuring the reproducibility of the critical dimension, high dimensional accuracy, and improved reliability.

In addition, through the wafer priming surface treatment, the surface energy of the antireflection film is lowered to lower the polarity of the surface of the antireflection film, thereby making it hydrophobic to improve the uniformity of the resist film, and to improve adhesion to prevent white defects from occurring.

As a result, through the production of a high quality phase inversion blank mask using a chemically amplified resist, it is possible to produce a phase inversion photomask capable of ensuring the reproducibility of the critical dimension, high dimensional accuracy, and improved reliability.

In the manufacturing method of the blank mask and the photomask according to the present invention, surface treatment is performed on a phase inversion film, a light shielding film, or an antireflection film to form an interface with a resist film using an organic material containing silicon, thereby improving adhesion to the resist and basicity. By suppressing the neutralization reaction of the strong acid generated from the resist at the interface between the film and the resist containing the material of the material to minimize the occurrence of skin layer and footing can provide convenience for the wet etching and dry etching process in the photomask manufacturing.

In addition, smooth control of the critical dimensions required for the miniaturization and high integration of semiconductor integrated circuits and the absence of residues on the surface of the film containing basic materials eliminate the resist, thereby minimizing the occurrence of the most important defects in photomask fabrication. And it is effective to reduce the cost.

Claims (27)

In a blank mask composed of a resist film formed by laminating a phase inversion film, a light shielding film, an antireflection film, or at least one selected from a film on a transparent substrate, and coating a resist on the film. And a surface modification step of forming a monomolecular film by performing surface treatment with an organic material containing silicon on the phase inversion film or the light shielding film or the antireflection film forming an interface with the resist film. The method of claim 1, wherein the organic material containing silicon, Hexamethyldisilane, Trimethylsilyl diethylamine, O-trimethylsily-acetate, O-trimethylsilylproprionate, O-trimethylsilylbutyrate (O-trimet hylsilylbutyrate), Trimethylsilyltrifluoroacetate, Trimethylmethoxysilane, N-methyl-N-trimethylsilyltrifluoroacetamide (N-methyl-N-trimethyl-silytrifluoroacetamide) O-trimethylsilyacetylacetone, Isopropenoxytrimethylsilane, Trimethylsilyltrifluoroacetamide, Methyltrimethylsilydimethylketone acetate, and trimethylethoxyethoxysilane Enemy selected from the group consisting of The blank mask manufacturing method characterized by using at least 1 sort (s). The method of claim 1, wherein the surface modification step, Method of manufacturing a blank mask, characterized in that the surface treatment of the organic material containing silicon by spin coating or vapor priming. The method of claim 3, wherein When spin-coating the organic material containing silicon, the amount of organic material containing silicon is 0.5 ~ 50㏄, the number of rotation is a blank mask manufacturing method characterized in that the surface treatment using 10 ~ 3000rpm . The method of claim 3, wherein When the priming surface treatment of the organic material containing silicon, nitrogen or argon is used as a gas for transmitting the organic material containing silicon. The method of claim 5, The pressure of the gas is a blank mask manufacturing method, characterized in that supplied at a pressure of 0.01 ~ 5kg / ㎠ and a capacity of 0.01 ~ 100l / min. The method of claim 6, The vacuum degree is a blank mask manufacturing method, characterized in that less than 760mmHg. The method of claim 5, The blank mask manufacturing method characterized in that the treatment at the temperature range of 20 ~ 300 ℃ during priming surface treatment. The method of claim 1, Before performing surface treatment with the organic material containing silicon, a dehydration bake is carried out in a range of 20 ° C. to 300 ° C. as a pretreatment step for removing water on the surface of the one or more selected membranes. Blank mask manufacturing method. The method of claim 1, After the surface treatment using the organic material containing silicon, as a post-treatment step for improving the adhesive force, the blank mask manufacturing method characterized in that for performing in the range of 20 ~ 300 ℃. The method of claim 1, The blank mask manufacturing method, characterized in that for coating the resist by spin coating or capillary (Capillary) coating on the surface treated with the organic material containing silicon. The method of claim 1, wherein the phase inversion film, Cobalt (Co), tantalum (Ta), tungsten (W), molybdenum (Mo), and chromium (Cr), formed by sputtering by placing a sputtering target in a vacuum chamber in which an inert and active gas is introduced using a metal as a matrix. , Vanadium (V), palladium (Pd), titanium (Ti), niobium (Nb), zinc (Zn), hafnium (Hf), germanium (Ge), aluminum (Al), platinum (Pt), manganese (Mn) And a film including at least one selected from the group consisting of iron (Fe) and silicon (Si). The method of claim 12, The inert gas is at least one selected from the group consisting of argon (Ar), helium (He), neon (Ne) and xenon (Xe), the active gas is oxygen (O ₂ ), nitrogen (N ₂ ) At least 1 selected from the group consisting of carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), ammonia (NH ₃ ) and methane (CH ₄ ) The blank mask manufacturing method characterized by using more than 1 type. The method of claim 12, When the metal matrix is a combination of molybdenum silicide (MoSi), molybdenum nitride (MoSiN), molybdenum oxide (MoSiO), molybdenum carbide (MoSiC), molybdenum carbide (MoSiCO), molybdenum nitride (MoSiCN) And a phase inversion film of molybdenum oxynitride silicide (MoSiON) and molybdenum oxynitride silicide (MoSiCON) components. The method of claim 1, wherein the light shielding film and the anti-reflection film, A sputtering target is placed in a vacuum chamber in which an inert and active gas is introduced using a metal as a matrix, and formed by sputtering. Tungsten (W), tantalum (Ta), chromium (Cr), titanium (Ti) and molybdenum silicide (MoSi) Method for producing a blank mask, characterized in that the film comprising at least one member selected from the group consisting of). The method of claim 15, The inert gas is at least one selected from the group consisting of argon (Ar), helium (He), neon (Ne) and xenon (Xe), the active gas is oxygen (O ₂ ), nitrogen (N ₂ ) At least 1 selected from the group consisting of carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), ammonia (NH ₃ ) and methane (CH ₄ ) The blank mask manufacturing method characterized by using more than 1 type. The method of claim 15, When the metal matrix is chromium (Cr), chromium nitride (CrN), chromium oxide (CrO), chromium carbide (CrC), chromium carbide oxide (CrCO), chromium nitride (CrCN), chromium nitride (CrON) and A method of manufacturing a blank mask, characterized in that it is a light shielding film and an antireflection film of chromium oxynitride (CrCON) component. The method of claim 1, wherein the phase inversion film, the light blocking film, and the anti-reflection film A method for producing a blank mask, characterized in that 0 to 20 at% of carbon, 0 to 60 at% of oxygen, 0 to 60 at% of nitrogen, and 20 to 60 at% of silicon, and the rest being a metal component. The method of claim 1, wherein the phase inversion film, A method of manufacturing a blank mask, characterized in that a continuous film manufactured to change a component from a transparent substrate to an upper film, or a film composed of multiple layers of a low transmittance film for controlling transmittance and a high transmittance film for controlling phase inversion. The method of claim 1, wherein the light shielding film and the antireflection film, A method of manufacturing a blank mask, characterized in that the continuous film, or a film composed of multiple layers, having no structure of a film having a higher nitrogen content toward the transparent substrate. The method of claim 20, wherein the resist, A blank mask manufacturing method, characterized in that selected from the group consisting of photoresist, electron beam resist and chemically amplified resist. The method of claim 21, wherein the chemically amplified resist, Method for producing a blank mask, characterized in that the alkali soluble resin and PAG (Photo Acid Generator). The method of claim 21, Blank mask manufacturing method characterized in that for performing a soft bake in the range of 80 ~ 200 ℃ on a hot plate after the resist coating. The method of claim 21, wherein the thickness of the resist, Blank mask manufacturing method characterized in that 100 ~ 10000Å. A blank mask produced by the method of claim 1. A mask mask is formed by patterning all or one or more selected ones of a phase inversion film, a light shielding film, and an antireflection film formed on a blank mask manufactured by the manufacturing method of claim 1 to claim 24. A mask pattern is formed by patterning all or at least one selected from among a phase inversion film, a light shielding film, and an antireflection film formed on the blank mask manufactured by the method of claim 1 to 24. Photomask Manufacturing Method.

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