KR20050115678A - Method for coating photo-resist of semiconductor device - Google Patents
Method for coating photo-resist of semiconductor device Download PDFInfo
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- KR20050115678A KR20050115678A KR1020040041032A KR20040041032A KR20050115678A KR 20050115678 A KR20050115678 A KR 20050115678A KR 1020040041032 A KR1020040041032 A KR 1020040041032A KR 20040041032 A KR20040041032 A KR 20040041032A KR 20050115678 A KR20050115678 A KR 20050115678A
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- Prior art keywords
- wafer
- photosensitive film
- semiconductor device
- coating
- photoresist
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 238000000576 coating method Methods 0.000 title claims abstract description 11
- 239000011248 coating agent Substances 0.000 title claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- 238000004528 spin coating Methods 0.000 claims description 8
- 239000007888 film coating Substances 0.000 claims description 5
- 238000009501 film coating Methods 0.000 claims description 5
- 238000011109 contamination Methods 0.000 abstract description 8
- 239000000356 contaminant Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Plasma & Fusion (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
본 발명은 반도체소자의 감광막 코팅방법에 관한 것으로, 웨이퍼 에치부 바깥쪽으로 돌출된 감광막을 제거하여 오염원으로 사용되는 현상을 방지하기 위하여, 상기 감광막을 웨이퍼의 배면에서 노광시키고 현상하여 제거함으로써 웨이퍼의 오염을 방지할 수 있도록 하고 그에 따른 반도체소자의 특성 및 신뢰성을 향상시킬 수 있는 기술이다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for coating a photosensitive film of a semiconductor device, in order to remove the photosensitive film protruding outward from the wafer etched portion and to prevent the phenomenon of being used as a source of contamination, the photosensitive film is exposed on the back of the wafer, developed and removed to contaminate the wafer. It is a technology that can prevent and improve the characteristics and reliability of the semiconductor device accordingly.
Description
본 발명은 반도체소자의 감광막 코팅방법에 관한 것으로, 특히 스핀 코팅을 이용한 감광막의 도포 공정시 웨이퍼 에지부 바깥으로 돌출된 부분을 제거하여 오염을 방지할 수 있도록 하는 기술에 관한 것이다. The present invention relates to a method for coating a photosensitive film of a semiconductor device, and more particularly, to a technique for preventing contamination by removing a portion protruding outside the edge of a wafer during a photosensitive film coating process using spin coating.
종래에는 웨이퍼 상에 감광막을 도포하고 웨이퍼 에지부의 2∼3 ㎜ 정도를 씨너 ( thinner ) 로 린스 ( rinse ) 하는 EBR ( edge beed removal )을 실시하였다. Conventionally, EBR (edge beed removal) which apply | coated the photosensitive film on the wafer and rinsed about 2-3 mm of the wafer edge part with thinner was performed.
상기 에지부로 돌출되는 감광막은 직접적으로 공정 불량을 유발하지는 않지만, 2차 오염으로 작용하게 된다. The photosensitive film protruding to the edge portion does not directly cause a process defect, but acts as a secondary contamination.
이를 방지하기 위하여 상기 EBR 공정을 실시하였다. In order to prevent this, the EBR process was performed.
그러나, 웨이퍼의 에지부 바깥부분으로 돌출되는 부분을 완전히 제거할 수 없었다. However, the portion protruding outside the edge of the wafer could not be completely removed.
도 1 은 웨이퍼의 오염을 도시한 개략도이고, 도 2 는 상기 도 1 의 ⓐ 부분과 같은 에지부에서 오염이 발생된 것을 도시한 사진이다. FIG. 1 is a schematic view showing contamination of a wafer, and FIG. 2 is a photograph showing that contamination occurs at an edge portion such as part ⓐ of FIG. 1.
도 3 은 오염된 부분의 웨이퍼 성분을 검사하였을 때 비정상적인 지역에서 카본 성분이 검출됨을 도시한 그래프이다. 3 is a graph showing that the carbon component is detected in an abnormal area when the wafer component of the contaminated portion is inspected.
도 4 는 웨이퍼 상에 감광막을 코팅하는 방법을 도시한 단면 개략도로서, 감광막이 정상 도포된 경우를 도시한다. 4 is a cross-sectional schematic diagram showing a method of coating a photoresist film on a wafer, showing a case where the photoresist film is normally applied.
먼저, 스피너(21)가 접속된 웨이퍼 척(23) 상부에 웨이퍼(25)를 탑재하고 그 상부에 감광막(27)을 스핀 코팅한다. 이때, 상기 스핀 코팅 공정은 상기 스피너(21)를 회전시키며 감광액을 웨이퍼 상에 분사하여 실시한다. First, the wafer 25 is mounted on the wafer chuck 23 to which the spinner 21 is connected, and the photosensitive film 27 is spin coated on the wafer 25. In this case, the spin coating process is performed by spraying the photoresist on the wafer while rotating the spinner 21.
도 5 는 상기 도 4 와 같은 스핀 코팅 방법으로 웨이퍼(25) 상에 감광막(27)을 코팅한 것을 도시한 단면 개략도로서, ⓑ 부분과 같이 감광막(27)이 상기 웨이퍼(25)의 에지부 쪽으로 돌출된 형태로 코팅된 것이다. FIG. 5 is a schematic cross-sectional view illustrating the coating of the photosensitive film 27 on the wafer 25 by the spin coating method as shown in FIG. 4, in which the photosensitive film 27 moves toward the edge portion of the wafer 25 as shown in FIG. It is coated in a protruding form.
후속 공정에서 씨너를 이용하여 상기 웨이퍼(25)의 배면을 세정하여 오염물질을 제거한다. In a subsequent process, the backside of the wafer 25 is cleaned with thinner to remove contaminants.
그러나, 상기 ⓑ 와 같이 돌출된 감광막은 그래로 남아 2차 오염원으로 사용된다. However, the photosensitive film protruding as ⓑ remains as such and is used as a secondary pollution source.
이상에서 설명한 바와 같이 반도체소자의 감광막 코팅 방법은, 스핀 코팅 공정시 웨이퍼로 돌출되어 상기 웨이퍼의 배면으로 노출되는 감광막을 완전히 제거할 수 없어 상기 감광막은 장비를 오염시키는 것과 같이 2차 오염원으로 작용되는 문제점이 있다. As described above, in the method of coating the photoresist of a semiconductor device, the photoresist may not be completely removed by protruding from the wafer during the spin coating process and exposed to the backside of the wafer, and thus the photoresist acts as a secondary pollutant such as contaminating equipment. There is a problem.
본 발명은 상기한 바와 같이 종래기술에 따른 문제점을 해결하기 위하여, 웨이퍼의 배면으로 노출되는 감광막을 배면으로부터 노광시켜 현상공정으로 제거함으로써 2차 오염원으로 작용되는 현상을 방지할 수 있도록 하는 반도체소자의 감광막 코팅방법을 제공하는데 그 목적이 있다. The present invention is to solve the problem according to the prior art as described above, by exposing the photosensitive film exposed to the back surface of the wafer from the back to remove the development process by the semiconductor device of the semiconductor device to prevent the phenomenon Its purpose is to provide a photoresist coating method.
이상의 목적을 달성하기 위해 본 발명에 따른 반도체소자의 감광막 코팅 방법은, In order to achieve the above object, the photosensitive film coating method of the semiconductor device according to the present invention,
웨이퍼 전면에 감광막을 코팅하는 방법에 있어서, In the method of coating the photosensitive film on the entire surface of the wafer,
웨이퍼 상에 감광막을 스핀 코팅하고 웨이퍼 배면을 백-린스 ( back rinse ) 하는 공정과,Spin coating a photoresist film on the wafer and back rinsing the back surface of the wafer;
상기 웨이퍼의 배면으로부터 램프를 이용한 노광공정을 실시하여 상기 웨이퍼 에치부 바깥쪽으로 돌출된 감광막을 노광시키고 이를 현상하여 제거함으로써 웨이퍼 상에만 감광막을 코팅하는 것을 특징으로 한다. The photosensitive film is coated only on the wafer by performing an exposure process using a lamp from the back surface of the wafer to expose the photosensitive film protruding outward from the wafer etched portion and to develop and remove the photosensitive film.
이하, 첨부된 도면을 참고로 하여 본 발명을 상세히 설명하기로 한다. Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
도 6 은 본 발명의 실시예에 따른 반도체소자의 감광막 코팅 방법을 도시한 단면 개략도이다. 6 is a schematic cross-sectional view showing a photosensitive film coating method of a semiconductor device according to an embodiment of the present invention.
도 6을 참조하면, 스피너(41)가 접속된 웨이퍼 척(43) 상부에 웨이퍼(45)를 탑재하고 그 상부에 감광막(47)을 스핀 코팅한다. Referring to FIG. 6, the wafer 45 is mounted on the wafer chuck 43 to which the spinner 41 is connected, and the photosensitive film 47 is spin coated on the wafer 45.
이때, 상기 감광막(47)이 웨이퍼(45)의 에지부 측으로 돌출된 형태로 코팅된다. In this case, the photosensitive film 47 is coated in a form protruding toward the edge portion of the wafer 45.
여기서, 상기 스핀 코팅 공정은 상기 스피너(41)를 회전시키며 감광액을 웨이퍼(45) 상에 분사하여 실시한 것이다. In this case, the spin coating process is performed by rotating the spinner 41 and spraying the photosensitive liquid onto the wafer 45.
그 다음, 상기 웨이퍼의 배면을 린스하는 백린스 ( back rinse ) 공정을 실시한다. Next, a back rinse process is performed to rinse the back surface of the wafer.
이때, 상기 백린스 공정은 웨이퍼의 배면에 감광막이 도포되었을 때 회전력에 의한 펌 ( fume ) 을 발생시킨다. 상기 펌은 상기 웨이퍼의 배면에 형성된 오염물질을 제거하는 역할을 한다. At this time, the back rinse process generates a fume due to the rotational force when the photosensitive film is applied to the back of the wafer. The firm serves to remove contaminants formed on the back of the wafer.
그러나, 상기 감광막(47)은 상기 펌에 의하여 제거되지 않는다. However, the photosensitive film 47 is not removed by the firm.
그 다음, 별도의 램프(30)를 이용하여 상기 웨이퍼(45)의 배면에서 상기 감광막(47)을 노광 및 현상함으로써 상기 웨이퍼(45)의 에지부로 돌출된 감광막(47)을 완전히 제거한다. Next, the photosensitive film 47 protruding to the edge portion of the wafer 45 is completely removed by exposing and developing the photosensitive film 47 on the back surface of the wafer 45 using a separate lamp 30.
이상에서 설명한 바와 같이 본 발명에 따른 반도체소자의 감광막 코팅방법은, 웨이퍼의 전면에서의 감광막 코팅 공정으로 웨이퍼의 에치부 바깥쪽에 돌출된 감광막을 웨이퍼의 배면에서 노광하고 현상하여 제거함으로써 감광막으로 인한 오염을 미연에 방지할 수 있도록 하여 반도체소자의 특성 및 신뢰성을 향상시킬 수 있는 효과를 제공한다. As described above, the photoresist coating method of the semiconductor device according to the present invention is a photoresist coating process on the front surface of the wafer, thereby exposing and developing the photoresist film protruding outside the etched portion of the wafer from the back surface of the wafer to remove the contamination due to the photoresist film. It can be prevented in advance to provide an effect that can improve the characteristics and reliability of the semiconductor device.
도 1 은 종래기술에 따라 웨이퍼 에지부의 오염을 도시한 개략도.1 is a schematic diagram illustrating contamination of a wafer edge portion in accordance with the prior art;
도 2 는 상기 도 1 의 오염을 도시한 사진.Figure 2 is a photograph showing the contamination of Figure 1;
도 3 은 웨이퍼 에지부의 오염물질에 대한 성분결과를 도시한 그래프.3 is a graph showing the component results for contaminants at the wafer edge;
도 4 는 웨이퍼 상에 감광막이 정상적으로 스핀 도포된 것을 도시한 개략도.4 is a schematic diagram showing that the photosensitive film is normally spin-coated on a wafer.
도 5 는 웨이퍼 상에 감광막이 비정상적으로 스핀 도포된 것을 도시한 개략도.5 is a schematic view showing abnormally spin coating of a photosensitive film on a wafer;
도 6 은 본 발명에 따른 반도체소자의 감광막 코팅방법을 도시한 개략도.6 is a schematic view showing a photosensitive film coating method of a semiconductor device according to the present invention.
< 도면의 주요 부분에 대한 부호의 설명 ><Description of Symbols for Main Parts of Drawings>
11 : 웨이퍼 21 : 스피너 ( spinner ) 11: wafer 21: spinner
23 : 척 ( chuck ) 25 : 웨이퍼23: chuck 25: wafer
27 : 감광막 30 : 램프27: photosensitive film 30: lamp
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040041032A KR20050115678A (en) | 2004-06-04 | 2004-06-04 | Method for coating photo-resist of semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040041032A KR20050115678A (en) | 2004-06-04 | 2004-06-04 | Method for coating photo-resist of semiconductor device |
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| Publication Number | Publication Date |
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| KR20050115678A true KR20050115678A (en) | 2005-12-08 |
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| KR1020040041032A KR20050115678A (en) | 2004-06-04 | 2004-06-04 | Method for coating photo-resist of semiconductor device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118915393A (en) * | 2024-08-21 | 2024-11-08 | 武汉敏芯半导体股份有限公司 | Glue homogenizing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118915393A (en) * | 2024-08-21 | 2024-11-08 | 武汉敏芯半导体股份有限公司 | Glue homogenizing method |
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