KR20050069096A - Pattern of active area for liquid crystal display - Google Patents

Abstract

The present invention relates to an active pattern of a liquid crystal display, comprising: a first active pattern integrally formed under a first source / drain metal line, a second source / drain metal line, and a first gate region metal line interposed therebetween; And a second active pattern formed separately under the second source / drain metal line, the third source / drain metal line, and the second gate region metal line disposed therebetween. The first active pattern is formed in the P-type TFT region, and the second active pattern is formed in the N-type TFT region. In addition, only the channel portion through which the second gate metal line passes is separated from the second active pattern.

Description

Active pattern structure of liquid crystal display {Pattern of Active area for Liquid Crystal Display}

The present invention relates to an active region pattern structure of a liquid crystal display device, and more particularly, to an active region pattern structure having a different structure for each type of circuit element.

Recently, a liquid crystal display device, which is one of the flat panel display devices that are attracting attention, is an element that changes the optical anisotropy by applying an electric field to a liquid crystal having the liquidity and the optical properties of the crystal, and has been applied to a conventional cathode ray tube. Compared with low power consumption, small volume, large size, and high definition, the liquid crystal display device is widely used as a color filter substrate as an upper substrate and a thin film transistor substrate as a lower substrate. Arranged so as to face each other, a liquid crystal having dielectric anisotropy is formed therebetween, by switching a TFT added to hundreds of thousands of pixels through a pixel selection address wiring to apply a voltage to the pixel. The capacitor is driven in such a manner as to maintain the voltage charged in the pixel until the next address.

As described above, in the liquid crystal display device, a TFT substrate and a color filter substrate are opposed to each other with a liquid crystal layer interposed therebetween. As illustrated in FIG. 1, a plurality of gate lines 12 for transmitting a scanning signal to the TFT substrate are provided. ), A data line 15 for transmitting a video signal while defining a sub-pixel perpendicularly crossing the gate line 12, and a thin film transistor formed at an intersection point of the gate line 12 and the data line 15. And a pixel electrode 17 electrically connected to the thin film transistor TFT. In this case, the thin film transistor includes a gate electrode 12a branched from the gate line 12, and the thin film transistor 17; The semiconductor layer 14 formed on the gate electrode 12a, the source electrode 15a branched from the data line 15 on the semiconductor layer 14, and the source electrode 15a on the semiconductor layer 14. ) And a certain distance away from the drain Is configured to include an electrode (15b). The various patterns may be formed by various techniques, such as a photolithography technique or a printing technique.

Hereinafter, a pattern structure of an active region according to the related art will be described with reference to the accompanying drawings. FIGS. 2A to 2C are diagrams illustrating patterns of an active region of a conventional liquid crystal display.

2A is a diagram illustrating an integrated active pattern.

As illustrated, the source / drain metal lines 100 are long along the edge of the active region 103. A gate region metal line 120 is positioned between the source / drain metal lines 100. In addition, the portion where the width of the source / drain metal line 100 and the gate region metal line 120 coincide is indicated as the active region 130.

In the integrated active pattern, the active region pattern is connected to the source / drain metal line 100 and the gate region metal line interposed therebetween without being distinguished in the integrated active pattern.

On the other hand, the width-to-length ratio of the integrated active pattern is generally about 200/10.

2B is a diagram illustrating a separate active pattern.

As illustrated, source / drain metal lines are long at the edge of the active region 140. A gate region metal line 120 is positioned between the source / drain metal lines 100. In addition, the portion where the width of the source / drain metal line 100 and the gate region metal line 120 coincide is indicated as the active region 140.

In the split type active pattern, four thin film transistors having a width-to-length ratio of 50/10 are connected in parallel.

That is, unlike the integrated active pattern, four active patterns of the liquid crystal display are formed.

2C illustrates a semi-separable active pattern.

As illustrated, the source / drain metal lines 100 are long along the edge of the active region 150. A gate region metal line 120 is positioned between the source / drain metal lines 100. The portion where the widths of the source / drain metal line 100 and the gate region metal line 120 coincide is indicated as an active region.

The semi-separated active pattern is formed by dividing four active patterns into four thin-film transistors having a width-to-length ratio of 50/10 in parallel, similarly to the separated active pattern. In this case, although the active pattern is separated from the channel region 170 of the semiconductor layer through which the gate region metal passes, the active pattern of the source / drain metal region is not separated and connected integrally.

As such, when the active pattern is implemented on the same panel of the conventional liquid crystal display, only one of the integrated, separated, or semi-separated active patterns is formed, regardless of the device type. However, if only one active pattern is implemented as in the prior art, it is difficult to secure reliability according to the type of each device.

The present invention has been made to solve the above problems, it is possible to ensure the reliability of both the P-type and N-type device by applying an active pattern that is advantageous to maintain the reliability for each type of device on the panel of the liquid crystal display device The purpose is to provide an active pattern structure.

The active pattern structure of the present invention for achieving the above object is a first formed integrally under the first source / drain metal line, the second source / drain metal line and the first gate region metal line disposed therebetween. Active pattern; And a second active pattern formed separately under the second source / drain metal line, the third source / drain metal line, and the second gate region metal line disposed therebetween.

The first active pattern is formed in the P-type TFT region.

The second active pattern is formed in the N-type TFT region.

In the second active pattern, only the channel portion through which the second gate metal line passes may be separated.

Other objects and features of the present invention in addition to the above objects will be apparent from the description of the embodiments with reference to the accompanying drawings.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

3 is a view showing a first embodiment according to the present invention.

As illustrated, a first gate region metal line 230 is positioned between the first source / drain metal line 200 and the second source / drain metal line 210. A second gate region metal line 245 is formed between the line 210 and the third source / drain metal line 220. In FIG. 3, portions indicated by rectangular regions where the source / drain metal lines and the gate region metal lines overlap with each other become active regions 245 and 250. An active pattern 245 is integrally formed in a section between the first and second source / drain metal lines 200 and 210.

In the integrated active pattern region 240, a pattern of an active region is connected to the source / drain metal lines 200 and 210 and the gate region metal line 230 disposed therebetween.

When the active region is configured as a P type, the active region is integrally formed as described above. This is because, in the P type, the reliability of the device is increased only when the active area pattern is integrally formed.

For example, in the case of applying HDCS (High Drain Current Stress) to the P-type thin film transistor, when the active pattern is integrally formed as described above, the characteristics of the P-type thin film transistors before and after the HDCS, that is, the flat band voltage ), Threshold voltage and s factor are small.

On the other hand, in the section between the second and third source / drain metal lines 210 and 220, an active pattern 250 is formed in a separate type. In this case, unlike the unitary active pattern section, two active patterns 250 of the liquid crystal display are formed. It is formed separately.

When the active region is formed of N type, the active region 250 is implemented as described above. This is because, in the N type, the reliability of the device is increased only by forming a pattern of an active region in a separate type.

For example, in the case of applying HDCS (High Drain Current Stress) to the N-type thin film transistor, when forming an active pattern as a separate type as described above, the characteristics of the N-type thin film transistors before and after the HDCS, that is, the flat band voltage ), Threshold voltage and s factor are small.

As described above, when configuring a complementary metal oxide semiconductor (CMOS) circuit on the same panel of the liquid crystal display device, the integrated and separated active region patterns 240 and 250 are formed for each device type, thereby improving reliability of each device. Improve.

4 is a view showing a second embodiment according to the present invention.

As illustrated, branched gate region metal lines 230 and 240 are positioned between the source / drain metal lines 200, 210 and 220, respectively. In the drawing, portions indicated by rectangular regions where the source / drain metal lines and the gate region metal lines overlap are active regions 260 and 270. An active pattern 260 is integrally formed in a section between the first and second source / drain metal lines 200 and 210.

Accordingly, in the integrated active pattern region 260, the pattern of the active region is connected to the source / drain metal lines 200 and 210 and the gate region metal line 230 disposed therebetween.

When the active region is formed of the P-type device, the active region is integrally formed as described above. This is because, in the P type, the reliability of the device can be increased only when the active region pattern is integrally formed.

On the other hand, the active pattern 270 is formed in a semi-separated manner in the section between the second and third source / drain metal lines 210 and 220. Unlike the integrated active pattern section, two active patterns 270 are formed. Accordingly, the active patterns of the channel 280 of the semiconductor layer through which the gate region metal 240 passes are separated, but the active patterns of the source / drain metal regions 210 and 220 are integrally connected without being separated.

As in the separate active pattern, when the active region is formed of N type, the active region 270 is implemented as semi-separated as described above. This is because in the N type, if the active region pattern is semi-separated, the reliability of the device can be increased.

As described above, when configuring a circuit in CMOS on the same panel of the liquid crystal display device, by forming an integrated region and a semi-separated active region pattern for each element type, reliability of each element can be improved. In particular, when forming a CMOS circuit embedded in glass in a poly-silicon TFT, it is more preferable to form active pattern types separately for each type of device.

Those skilled in the art will appreciate that various changes and modifications can be made without departing from the technical spirit of the present invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification but should be defined by the claims.

As described above, the pattern structure of the active region according to the present invention has the effect of ensuring the reliability of each circuit element by mixing the active pattern suitable for the type of each circuit element on the panel.

1 is a plan view of a general liquid crystal display device.

2A to 2C show a pattern of an active region of a conventional liquid crystal display device.

3 shows a pattern of an active region according to a first embodiment of the present invention;

4 shows a pattern of an active region according to a second embodiment of the present invention;

Brief description of symbols for the main parts of the drawings

200, 210, 220: source / drain metal lines

230,240 gate area metal line

245,250,260,270: active area

280: channel portion

Claims (4)

A first active pattern integrally formed under the first source / drain metal line, the second source / drain metal line, and the first gate region metal line disposed therebetween; And a second active pattern formed separately under the second source / drain metal line, the third source / drain metal line, and the second gate region metal line disposed therebetween. The method of claim 1, And the first active pattern is formed in a P-type TFT region. The method of claim 1, And the second active pattern is formed in an N-type TFT region. The method of claim 1, And the second active pattern only separates a channel portion through which the second gate metal line passes.