KR20050042051A - Method for releasing resist - Google Patents

Abstract

The resist stripping method of the present invention includes contacting a wiring board having a residual resist film with a resist stripping liquid under an oxygen concentration atmosphere of 2% by volume or less. The resist stripping treatment is preferably performed after pretreatment of the remaining resist film with hydrogen peroxide. In the resist stripping method of the present invention, a resist stripping solution containing an amine compound, a solvent, a strong alkali and water is preferably used.

Description

Resist Stripping Method {METHOD FOR RELEASING RESIST}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to resist for removing resists and resist stripping methods used in the manufacture of semiconductor integrated circuits, liquid crystal panels, organic EL panels, printed boards, and the like.

Photoresists used in lithography technology are used in a wide range of fields, including integrated circuits such as ICs and LSIs, display devices such as LCDs and EL devices, printed boards, micromachines, DNA chips, and microplants. .

Conventionally, as a resist stripping solution, a solution containing an organic alkali, a water-soluble solvent, or the like is used. In particular, an amine compound is often used as an organic alkali, for example, an aqueous solution containing a non-aqueous solution of alkanolamine and dimethyl sulfoxide, an alkanolamine, a water-soluble organic solvent, and a sugar alcohol, Aqueous solutions containing alkanolamine, hydroxylamine and catechol have been used. Such alkaline resist stripping liquids are highly effective for stripping resists consisting of compounds containing phenolic hydroxyl groups and compounds containing ester groups.

Such a resist stripping liquid has been used for resist stripping on a substrate which does not mainly contain copper, such as aluminum and an aluminum alloy, mainly in the range of room temperature-100 degreeC.

In recent years, copper having a low resistance has been used as a wiring material. In particular, it has been used as a wiring material of semiconductors represented by LSI. In addition, a low dielectric layer is used as an insulating material in parallel thereto. In the conventional process, the resist is developed by dry etching, followed by an ashing process to remove the resist. However, the ashing process is easy to deteriorate the surface of the low dielectric constant film and functions as a circuit. There is damage. Therefore, although a process that omits the ashing step is desired, the resist after the dry etching is deteriorated, and there is a drawback that the resist stripping solution containing a conventional amine compound as an active ingredient cannot be sufficiently peeled off. In addition, the resist stripping solution containing the amine compound has a drawback of easily corroding copper wiring because it forms a copper-amine complex.

An object of the present invention is to provide a method of peeling a resist with an amine compound-containing resist stripping solution without corroding copper, particularly copper wiring. Another object of the present invention is to provide an amine compound-containing resist stripping solution that can be suitably used in the resist stripping method.

As a result of diligent study of the resist stripping solution for copper wiring boards, the present inventors have found that a composition containing an amine compound, a solvent, a strong alkali and water can peel off a resist without corroding copper or a copper alloy.

The present inventors earnestly examined about the optimal conditions which can peel off a resist without corroding copper. As a result, it has been generally mentioned that the amine compound corrodes copper, but oxygen dissolved in the resist stripping liquid oxidizes copper and the oxidized copper becomes a copper-amine complex to dissolve copper wiring. That is, it was found that oxygen dissolved in the resist stripping solution is the main cause of copper corrosion.

That is, the present invention provides a resist stripping method characterized by contacting a wiring board having a residual resist film after etching with a resist stripping solution in an oxygen concentration atmosphere of 2% by volume or less. In a preferred embodiment of the present invention, the substrate is brought into contact with the resist stripping solution after pretreatment with hydrogen peroxide.

 Moreover, this invention provides the resist stripping liquid containing an amine compound, a solvent, strong alkali, and water which can be used suitably for the said resist stripping method.

The resist stripper of the present invention contains an amine compound, a solvent, a strong alkali (optional component) and water.

Amine compounds include ammonia, monoalkylamines, dialkylamines, trialkylamines, alkanolamines, polyamines, hydroxylamine compounds and cyclic amines.

Monoalkylamines include methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, sec-butylamine, isobutylamine, tert-butylamine, pentylamine, 2-aminopentane, 3-aminophen Tan, 1-amino-2-methylbutane, 2-amino-2-methylbutane, 3-amino-2-methylbutane, 4-amino-2-methylbutane, hexylamine, 5-amino-2-methylpentane, Heptylamine, octylamine, nonylamine, decylamine, undecylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecylamine, octadecylamine, and the like;

Dialkylamines include dimethylamine, diethylamine, dipropylamine, diisopropylamine, di-n-butylamine, diisobutylamine, di-sec-butylamine, di-tert-butylamine and dipentylamine. ， Dihexylamine ， Diheptylamine, Dioctylamine, Dinonylamine, Didecylamine ， Methylethylamine, Methylpropylamine, Methylisopropylamine, Methyl-n-butylamine, Methylisobutylamine, Methyl-sec- Butylamine, methyl-tert-butylamine, methylamylamine, methylisoamylamine, ethylpropylamine, ethylisopropylamine, ethyl-n-butylamine, ethylisobutylamine, ethyl-sec-butylamine, ethyl- tert-butylamine, ethyl isoamylamine, propyl-n-butylamine, propyl isobutylamine and the like are exemplified;

Examples of the trialkylamine include trimethylamine, triethylamine, tripropylamine, tributylamine, tripentylamine, dimethylethylamine, methyldiethylamine, methyldipropylamine, and the like.

Alkanolamines include ethanolamine, 1-amino-2-propanol, N- (aminoethyl) ethanolamine, N-methylethanolamine, N-ethylethanolamine, N-propylethanolamine, N-butylethanolamine, di Ethanolamine, isopropanolamine, N-methylisopropanolamine, N-ethylisopropanolamine, N-propylisopropanolamine, 2-aminopropan-1-ol, N-methyl-2-aminopropan-1-ol, N-ethyl- 2-aminopropan-1-ol, 1-aminopropan-3-ol, N-methyl-1-aminopropan-3-ol, N-ethyl-1-aminopropan-3-ol, 1-aminobutane-2 -Ol, N-methyl-1-aminobutan-2-ol, N-ethyl-1-aminobutan-2-ol, 2-aminobutan-1-ol, N-methyl-2-aminobutan-1-ol , N-ethyl-2-aminobutan-1-ol, 3-aminobutan-1-ol, N-methyl-3-aminobutan-1-ol, N-ethyl-3-aminobutan-1-ol, 1 -Aminobutan-4-ol, N-methyl-1-aminobutan-4-ol, N-ethyl-1-aminobutan-4-ol, 1-amino-2-methylpropan-2-ol, 2-amino 2-methyl Pan-1-ol, 1-aminopentan-4-ol, 2-amino-4-methylpentan-1-ol, 2-aminohexan-1-ol, 3-aminoheptan-4-ol, 1-aminooctane 2-ol, 5-aminooctan-4-ol, 1-aminopropane-2,3-diol, 2-aminopropane-1,3-diol, tris (oxymethyl) aminomethane, 1,2-diamino Propan-3-ol, 1,3-diaminopropan-2-ol, and 2- (2-aminoethoxy) ethanol.

Polyamines include ethylenediamine, propylenediamine, trimethylenediamine, tetramethylenediamine, 1,3-diaminobutane, 2,3-diaminobutane, pentamethylenediamine, 2,4-diaminopentane, hexamethylenediamine, hepta Methylenediamine, octamethylenediamine, nonamethylenediamine, N-methylethylenediamine, N, N-dimethylethylenediamine, trimethylethylenediamine, N-ethylethylenediamine, N, N-diethylethylenediamine, triethylethylenediamine ， 1 , 2,3-triaminopropane, hydrazine, tris (2-aminoethyl) amine, tetra (aminomethyl) methane, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, heptaethyleneoctane, nonaethylene deca Min, diazabicyclo undecene, hydrazine, dimethyl hydrazine, methyl hydrazine, hydroxyethyl hydrazine, etc. are mentioned.

Examples of the hydroxyl amine compound include hydroxylamine, N-methylhydroxylamine, N-ethylhydroxylamine, and N, N-diethylhydroxylamine.

Cyclic amines include pyrrole, 2-methylpyrrole, 3-methylpyrrole, 2-ethylpyrrole, 3-ethylpyrrole, 2,3-dimethylpyrrole, 2,4-dimethylpyrrole, 3,4-dimethylpyrrole, 2, 3,4-trimethylpyrrole, 2,3,5-trimethylpyrrole, 2-pyrroline, 3-pyrroline, pyrrolidine, 2-methylpyrrolidine, 3-methylpyrrolidine, pyrazole, imidazole, 1,2,3-triazole, 1,2,3,4-tetrazole, piperidine, 2-pipecoline, 3-pipecoline, 4-pipecoline, 2,4-lufetidine, 2,6 -Lufetidine, 3,5-lufetidine, piperazine, 2-methylpiperazine, 2,5-dimethylpiperazine, 2,6-dimethylpiperazine, morpholine and the like.

Among the amine compounds, ethanolamine, 1-amino-2-propanol, N- (aminoethyl) ethanolamine, N-methylethanolamine, N-ethylethanolamine, diethanolamine, isopropanolamine, 2- (2-aminoe At least one compound selected from the group consisting of methoxy) ethanol, ethylenediamine, propanediamine, butylenediamine, diethylenetriamine, piperazine, morpholine, triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine desirable.

Strong alkalis include at least one selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, choline hydroxide and acetylcholine hydroxide. Compounds are preferred, and tetramethylammonium hydroxide and choline hydroxide are more preferred.

The solvent is preferably miscible with the amine compound, ethylene glycol, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol Monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monobutyl ether, diethylene glycol dimethyl ether, ether of dipropylene glycol dimethyl ether System solvents; Formamide, monomethylformamide, dimethylformamide, monoethylformamide, diethylformamide, acetamide, monomethylacetamide, dimethylacetamide, monoethylacetamide, diethylacetamide, N-methylpyrrolidone Amide solvents such as N-ethylpyrrolidone; Alcohol solvents such as methyl alcohol, ethyl alcohol, isopropanol, ethylene glycol and propylene glycol; Sulfoxide solvents such as dimethyl sulfoxide; Sulfone solvents such as dimethyl sulfone, diethyl sulfone, bis (2-hydroxysulfone) and tetramethylene sulfone; Imidazolidinone solvents such as 1,3-dimethyl-2-imidazolidinone, 1,3-diethyl-2-imidazolidinone, and 1,3-diisopropyl-2-imidazolidinone; And lactone solvents such as γ-butyrolactone and δ-valerolactone.

Among them, dimethyl sulfoxide, N, N-dimethylformamide, N, N-dimethylacetamide, N-methylpyrrolidone, diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl Ether, dipropylene glycol monobutyl ether, and propylene glycol are preferable because they are easy to obtain and have a high boiling point and are easy to use. Moreover, the said amine compound can also be used as a solvent.

In order to peel the resist without corroding the copper wiring, the resist stripping liquid contains 5-95% by weight of the amine compound, 3-85% by weight of the solvent, 0.01-5% by weight of strong alkali, and 1-25% by weight of water. More preferably, 10-40% by weight of the amine compound, 50-80% by weight of the solvent, 0.1-3% by weight of strong alkali and 5-20% by weight of water are more preferable. The additives which are conventionally used anticorrosive agents, such as sorbitol and a catechol, surfactant, etc. can be included in the range which does not impair the effect of this invention.

The manufacturing method of a resist stripping liquid is not specifically limited, It manufactures by a conventionally well-known method.

In the present invention, resist stripping is performed by contacting the remaining resist after etching, preferably before ashing, with a resist stripping solution containing an amine compound, a solvent, a strong alkali (optional component), and water at 20 to 60 ° C. for 1 to 30 minutes. Contact is usually performed by immersing the substrate having the remaining resist in a resist stripping solution.

For example, a widely used phenolic hydroxyl group-containing resist is deteriorated by dry etching. Conventional resist stripping liquids are used for the carbonyl group formed by salt formation and oxidation of amine compounds and phenolic hydroxyl groups. The resist is peeled off by the addition reaction of the amine compound. However, the ability to remove the advanced resist is small. In such a case, by using a resist stripping solution containing a strong alkali, the salt-forming ability with the phenolic hydroxyl group and the removal function of the halogen derived from the dry etching can be enhanced, and the hydrolysis function can be added.

As described above, oxygen dissolved in the resist stripping solution is the main cause of corrosion of copper and copper alloys. Corrosion is caused by an alkali component (amine compound + strong alkali) content of the resist stripping solution of 3% or more and an atmospheric oxygen concentration during the resist stripping operation. Becomes more pronounced when is high. Therefore, in the present invention, the resist stripping operation is performed in an atmosphere having an oxygen concentration of 2% by volume or less, preferably 1% by volume or less, effectively suppressing corrosion of copper and copper alloy. A low oxygen atmosphere is obtained by using nitrogen, preferably argon, hydrogen, or the like. More preferably, a gas such as nitrogen, argon, hydrogen or the like is blown into the resist stripping solution in an atmosphere having an oxygen concentration of 2% by volume or less, and dissolved. By discharging the gas and keeping the amount of dissolved oxygen in the resist stripping solution at 3 ppm or less, the resist stripping operation can be more effectively suppressed from corrosion of copper and copper alloy. Moreover, even if the resist stripping solution is degassed before use, do. As described above, the resist stripping method of the present invention is most effective when removing the remaining resist on the substrate having the copper film or the copper alloy film.

In addition, the present inventors have found that pretreatment with hydrogen peroxide is effective for peeling off resists that have undergone further deterioration. Hydrogen peroxide pretreatment oxidizes the resist surface undergoing deterioration, thereby lowering molecular weight and promoting carbonyl group formation. This facilitates resist removal.

Hydrogen peroxide pretreatment is performed by etching the wiring board before the resist stripping solution after etching in a solution having a hydrogen peroxide concentration of 0.5% by weight or more and preferably 1 to 10% by weight at 20 to 60 ° C for 1 to 30 minutes, for example, by dipping or the like. The solution may be an aqueous solution or the like. An additive such as a chelating agent or a surfactant may be added to the hydrogen peroxide solution. The wiring board pretreated with hydrogen peroxide may be washed with water or water, and then the above-mentioned resist may be used. The peeling operation is performed.

Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited in any way by the following Examples.

Examples 1-6 and Comparative Examples 1-2

A via hole structure was formed by dry etching on a 6-inch wafer in which a copper film, a SiN film, a SiO ₂ interlayer insulating film, and a resist film were sequentially stacked on a silicon substrate. The via hole structure reached the copper film. The substrate was immersed in a resist stripping liquid having the composition shown below at 70 ° C. for 30 minutes, then rinsed with water, and the degree of resist stripping and the corrosion of the copper film were observed with a scanning electron microscope. Shown in

The amount of dissolved oxygen in the resist stripping solution was measured in a nitrogen atmosphere using a digital oxygen concentration meter (Model DO-5509, lower detection limit of 0.5 ppm) manufactured by N. T. Corporation.

TABLE 1

Composition of Resist Stripping Solution Amine Compound Solvent Strong Alkali Water Type Weight% Type Weight% Type Weight% Example 1 EA 30 DMSO 60 TMAH 0.2 Balance 2 EA 25 NMP 65 TMAH 1 Balance 3 1A2P 32 PG 61 TMAH 0.5 Balance 4 TETA 18 DGME 72 CH 1 Balance 5 PEHA 30 DGBE 60 TMAH 2 Balance 6 AEEA 10 MEA 80 CH 0.1 Balance Comparative Example 1 EA 30 DMSO 60--Remaining 2 EA 30 DMSO 60 TMAH 0.2 Remaining

EA: Ethanolamine

1A2P: 1-amino-2-propanol

TETA: triethylenetetramine

PEHA: pentaethylenehexamine

AEEA: aminoethylethanolamine

TMAH: Tetramethylammonium Hydroxide

CH: choline hydroxide

DMSO: Dimethyl Sulfoxide

NMP: N-methylpyrrolidone

PG: Propylene Glycol

DGME: Diethylene Glycol Monomethyl Ether

DGBE: Diethylene Glycol Monobutyl Ether

MEA: N-methylethanolamine

TABLE 2

             Atmosphere Oxygen Concentration Resist Stripping Copper Corrosion Dissolved Oxygen Concentration (ppm) (ppm) Example 1 500 Good None 0.5 or less 2 200 Good None 0.63 400 Good None 1.34 800 Good None 0.5 or less 5 200 Good None 1.56 400 Good None 0.5 or less Comparative Example 1 500 No peeling off 0.5 or less 2 200000 Good Remarkable 5.8

Examples 7-12 and Comparative Examples 3-4

A via hole structure was formed by dry etching on a 12 inch wafer in which a copper film, a SiN film, a SiO ₂ interlayer insulating film, and a resist film were sequentially stacked on a silicon substrate. The substrate was immersed in a liquid shown in Table 3 at 60 ° C. for 15 minutes and then pretreated, and then immersed in a resist stripping liquid having a composition shown in Table 3 at 70 ° C. for 30 minutes, followed by rinsing with water, followed by resist stripping. The degree of corrosion and the degree of corrosion of the copper film were observed with a scanning electron microscope. The results are shown in Table 4.

TABLE 3

Composition of pretreatment resist stripping solution Hydrogen peroxide amine compound Solvent Strong alkali Water concentration Additive type Weight% Type Weight% Type Weight% (% by weight) (% by weight) Example 7 6-EA 30 DMSO 60 TMAH 0.2 Balance 8 5 EDTA TETA 25 NMP 25 TMAH 1 Balance (0.001) PG 409 3-1A2P 25 DMSO 65 TMAH 1.5 Balance 10 4 NH4F EA 18 DGME 72 CH 1 Balance (0.001) 11 4-PEHA 30 DGBE 60 TMAH 2 remaining amount 12 4-AEEA 10 MEA 80 CH 0.1 remaining amount Comparative example 3--EA 30 DMSO 60 TMAH 0.2 remaining amount 4--EA 25 NMP 65 TMAH 1 remaining amount

EA: Ethanolamine

1A2P: 1-amino-2-propanol

TETA: triethylenetetramine

PEHA: pentaethylenehexamine

AEEA: aminoethylethanolamine

TMAH: Tetramethylammonium Hydroxide

CH: choline hydroxide

DMSO: Dimethyl Sulfoxide

NMP: N-methylpyrrolidone

PG: Propylene Glycol

DGME: Diethylene Glycol Monomethyl Ether

DGBE: Diethylene Glycol Monobutyl Ether

MEA: N-methylethanolamine

EDTA: Ethylenediamine Tetraacetic Acid

TABLE 4

             Atmosphere Oxygen Concentration Resist Stripping Copper Corrosion Dissolved Oxygen Concentration (ppm) (ppm) Example 7 200 Good None 0.5 or less 8 200 Good None 0.5 or less 9 200 Good None 1.010 200 Good None 0.5 or less 11 200 Good None 0.5 or less 12 200 Good None 0.5 or less Comparative Example 3 200 No peeling off 0.5 Less 4 200 No peeling off 0.5 or less

As is clear from the results of Tables 2 and 4, according to the resist stripping method of the present invention, the resist stripping of the wiring board can be performed without corroding the copper film. Moreover, even when the resist stripping solution is difficult only by pretreatment with hydrogen peroxide. Resist peeling can be performed easily.

Examples 13-15 and Comparative Example 5

The silicon substrate which has a 400-micrometer-thick copper film was immersed in the resist stripping liquid of the following composition, and the corrosion rate of the copper film was measured at 50 degreeC. The result is shown in Table 5.

Resist stripper composition

Ethanolamine: 45 wt%

Diethylene glycol monomethyl ether: 20% by weight

Water: 32 wt%

Sorbitol: 3 wt%

TABLE 5

                          Atmosphere Condition Corrosion Rate (Å / min) Example 13 Treatment with Nitrogen Gas 0.7 Example 14 Blowing Nitrogen Gas into Resist Stripping Solution Example 15 Comparative Example 1 in 1% Oxygen-Nitrogen 5

It was evident that the corrosion rate of copper greatly changed under the influence of oxygen. If you continue to supply air, the corrosion of copper continues. To prevent this, it is necessary to cut off the oxygen source.

Examples 16-17 and Comparative Example 6

A silicon substrate having a copper film having a thickness of 400 kPa was immersed in a resist stripping solution of the following composition, and the corrosion rate of the copper film was measured at 50 ° C. The measurement was performed in a glove box equipped with an atmospheric oxygen concentration meter. 6 is shown.

Resist stripper composition

Ethanolamine: 40 wt%

Diethylene glycol monobutyl ether: 38% by weight

Water: 20 wt%

Catechol: 2 wt%

TABLE 6

                          Atmosphere Condition Corrosion Rate (Å / min) Example 16 In a nitrogen atmosphere of 1.3 ppm with an oxygen concentration of 200 ppm Example 17 After degassing the resist stripping solution, Comparative Example 6 in a nitrogen atmosphere with a concentration of 0.5 oxygen of 200 ppm Example 6 in an air atmosphere 2.0

Example 18 and Comparative Example 7

A silicon substrate having a copper film having a thickness of 400 kPa was immersed in a resist stripping solution having the following composition, and the corrosion rate of the copper film was measured at 50 ° C. The measurement was performed in a glove box equipped with an atmospheric oxygen concentration meter.

Resist stripper composition

Ethanolamine: 30 wt%

N-methylpyrrolidone: 55 wt%

Water: 10 wt%

Catechol: 5 wt%

Further, after the photoresist was applied to the silicon substrate, the pattern was formed, and the dry etching was carried out, the resist stripping solution was immersed at 50 ° C. for 30 minutes. The time until the remaining resist was removed was measured while observing with an optical microscope. The results are shown in Table 7.

TABLE 7

                    Atmosphere Conditions Corrosion Rate Resist Removal Time (ms / min) (min) Example 18 0.8 15 in nitrogen atmosphere Comparative Example 7 4.5 15 in air atmosphere

By performing a resist stripping process in nitrogen (in a low oxygen concentration atmosphere), corrosion of copper can be suppressed without changing resist stripping property.

According to the present invention, it is possible to perform resist stripping after dry etching without corrosion of copper. This makes it possible to use a resist stripping liquid that has not been used in the processing of a substrate having conventional copper wiring. Furthermore, by pre-treating with hydrogen peroxide, a resist that is difficult to peel can be easily peeled off.

Claims (12)

A resist stripping method comprising the step of contacting a wiring board having a residual resist film after etching with a resist stripping solution under an oxygen concentration atmosphere of 2% by volume or less. The method of claim 1, The step of contacting the wiring substrate with the resist stripping liquid, the resist stripping method, characterized in that performed while discharging the dissolved gas in the resist stripping liquid. The method of claim 1, The step of contacting the wiring substrate with a resist stripping liquid, the resist stripping method, characterized in that is performed after the deaeration (resist) the resist stripping liquid. The method according to any one of claims 1 to 3, The method is a resist stripping method characterized by performing a pretreatment for bringing the remaining resist film into contact with hydrogen peroxide before contacting the wiring substrate and the resist stripping liquid. The method of claim 4, wherein The hydrogen peroxide pretreatment is performed by contacting the remaining resist film with a solution having a hydrogen peroxide concentration of at least 0.5% by weight. The method according to any one of claims 1 to 5, The resist stripping method, wherein the dissolved oxygen concentration in the resist stripping solution is 3 ppm or less. The method according to any one of claims 1 to 6, The resist stripping method comprises an amine compound, a solvent, a strong alkali and water. The method of claim 7, wherein The resist stripping method contains 5 to 95% by weight of an amine compound, 3 to 85% by weight of a solvent, 0.01 to 5% by weight of strong alkalis and 1 to 25% by weight of water. The method according to claim 7 or 8, The amine compound is ethanolamine, 1-amino-2-propanol, N- (aminoethyl) ethanolamine, N-methylethanolamine, N-ethylethanolamine, diethanolamine, isopropanolamine, 2- (2-amino Methoxy) ethanol, ethylenediamine, propanediamine, butylenediamine, diethylenetriamine, piperazine, morpholine, triethylenetetramine, tetraethylenepentamine and pentaethylenehexamine The resist peeling method made into it. The method according to any one of claims 7 to 9, The strong alkali is at least one member selected from the group consisting of tetramethylammonium hydroxide, choline hydroxide, tetraethylammonium hydroxide and tetrabutylammonium hydroxide. The method according to any one of claims 7 to 10, The solvent is dimethyl sulfoxide, N, N-dimethylformamide, N, N-dimethylacetamide, N-methylpyrrolidone, diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether And dipropylene glycol monobutyl ether and at least one member selected from the group consisting of propylene glycol. The method according to any one of claims 7 to 11, The said wiring board has a copper film or a copper alloy film, The resist peeling method characterized by the above-mentioned.