KR20050019129A - Substrate processing apparatus and related systems and methods - Google Patents

Abstract

The microelectronic substrate processing apparatus and method of the present invention include a main chamber and a movable boundary. The main chamber includes a main chamber wall surrounding the interior of the main chamber. The movable boundary can move between the first position and the second position. In the first position, the movable boundary at least partially forms a sub-chamber capable of processing the substrate. The sub-chamber is in fluid isolation from the main chamber and provides an environment suitable for high pressure treatment of substrates such as cleaning or surface treatment. The sub-chamber can be maintained at high pressure, while the main chamber is kept at low, atmospheric or vacuum. The substrate processing apparatus may be directly coupled to an external substrate handling and / or assembly module, such that the main chamber interior provides a buffer between the sub-chamber and the external module. In the second position of the movable boundary, the substrate can be loaded into or removed from the device by transferring the substrate into and out of any external module provided.

Description

Substrate processing apparatus and substrate processing method {SUBSTRATE PROCESSING APPARATUS AND RELATED SYSTEMS AND METHODS}

The present invention relates to treating a substrate, for example, as part of a microscale device fabrication process. More specifically, the present invention is directed to treating substrates (eg, peeling, cleaning, drying, surface treatment, etc.) in a high pressure environment that can be isolated from the atmosphere or vacuum but still functionally combined. It is about.

Microscale devices such as integrated circuits (ICs), optoelectronic devices, micromechanical devices, micro-electromechanical devices, and microfluidic devices are formed according to the precise sequence of assembly steps and under tightly controlled process conditions. Micron and sub-micron sized features. Often, substrates such as semiconductor wafers are provided that contain active passive electrical circuit elements such as transistors, resistors, and capacitors. Semiconductor and thin film deposition techniques are practiced to change the layer of the substrate or to attach the layer to the substrate. The substrate or layer attached to a portion of the substrate may be a conductive plane or electrode, an insulation barrier between the conductive planes, an optically conductive waveguide, a structural layer used to form a micromachined part, or an etch stop that controls the effect of an etching process. It may be permanent, as in the case of (etchstop). Another layer or part of the layer is formed between the substrate and the structural layer, such as in the case of an intermediate sacrificial layer that is sequentially removed to release the structural layer or part of the structural layer from the substrate, or for the formation of electronic or mechanical features. It may be temporary, as in the case of a photoresist layer formed on a substrate as a template. Most of the above-described layers are intended to completely remove the layer or (1) features such as apertures, biases, microchambers, microfluidic channels and trenches, (2) contacts, electrical leads, optical windows and deflectable membranes. Removal processes such as etching (which may occur isotropically or anisotropically along the desired direction) are performed to form two-dimensional structures such as (3) actuators and cantilevers. Removing the layer or part of the layer can be performed by chemical mechanical polishing or other surface micromachining techniques. Starting substrates employed during the assembly process, such as, for example, silicon or glass substrates, themselves undergo large-scale micromachining techniques to form cavities or holes therein. In addition, the transition layer, such as the photoresist material, may be partially removed by development, and may be removed entirely by chemical exfoliation or plasma ashing.

During the assembly process, one or more cleaning steps may be necessary to remove various forms of contaminants or other unwanted materials or to prepare a surface for subsequent deposition of layers. For example, the top surface of a large starting material such as a substrate may be initially oxidized. Oxidation may make the surface of the substrate unsuitable for subsequent deposition processes, in which case the oxidation will need to be removed in preparation for depositing additional layers on the substrate surface. According to another example, depositing a metal layer on a semiconductor substrate requires a prior desorption process to degas the substrate. In addition, removal of the photoresist layer, for example after the plasma ashing process, may leave residues, which necessitates a cleaning step to remove such residues. In addition, the formation of microfeatures, such as deep trenches, by etching creates the need to remove residues or particulates. Other sources of residual contaminants include grinding and planarization processes. Various cleaning media have been used. Recently, there has been a great interest in cleaning substrate surfaces in a containment environment such as a process chamber using supercritical carbon dioxide (CO ₂ ).

Many of the steps required during the progress of the assembly process are performed in a chamber or module that is hermetically closed from the surrounding environment during use to maintain the desired process conditions (eg, pressure, temperature, electric field strength, flow rate). Depending on the particular process step performed, the chamber or module is maintained at reduced pressure (eg, plasma enhanced deposition) or at atmospheric or pseudo atmospheric pressure (eg, atmospheric and low pressure chemical vapor deposition). . However, most deposition processes are performed in a controlled atmosphere under reduced pressure, while conventional cleaning processes are performed at ambient or similar ambient pressures (eg, 0-20 psig (1.01-2.39 bar)). Since each facility used in the deposition and cleaning process is a separate one, it is usually necessary to transport a given substrate from the deposition chamber to a cleaning facility remote from the deposition chamber. Thus, the entire assembly process flow is discrete, so it is generally necessary to expose the substrate to the surrounding environment at times before and between deposition, or between deposition and post-cleaning.

Thus, the substrate can be cleaned in a sealed environment under conditions (e.g., high pressure) that are optimal for the cleaning process, while at the same time and without the need to transport the substrate to the surrounding environment (different set of optimal It would be advantageous to provide a method and apparatus capable of integrating a cleaning process with an assembly process which requires conditions.

Summary of the Invention

In a broad sense, the present invention includes a method and apparatus for processing microelectronic substrates and the like. In general, a first chamber is formed in the second chamber. The first chamber is connected to the first closing mechanism and the second chamber is connected to the second closing mechanism. The first closing mechanism causes the first chamber to be in an open or closed state. The second closing mechanism causes the second chamber to be in an open or closed state. The first closing mechanism associated with the first chamber is mechanically associated with the second chamber. The second closure mechanism associated with the second chamber is mechanically associated with the second chamber.

According to at least one embodiment of the present invention, the first closure mechanism has a boundary that can move within the second chamber to selectively open and close the first chamber with respect to the second chamber. In the closed state of the first chamber, the boundary serves to structurally define the interior of the first chamber, which interior is in fluid isolation from the interior of the second chamber. According to one particularly advantageous embodiment, the boundary is associated with a substrate supporting part or pressing part (eg wafer platen or chuck). In the case of a substrate pressing component, the boundary also acts as part of a substrate movement (e.g., lift) mechanism that is integrally formed with the device, thereby performing any substrate handling task (e.g., substrate transfer) associated with the processing of the substrate. Can be executed. The second closure mechanism associated with the second chamber may provide a sealable interface between the second chamber and the external environment of the second chamber. As one example, the second closure mechanism has a gate or similar device.

Due to the device of this construction, the internal volume of the second chamber is substantially reduced to the appropriate pressure (eg nitrogen) at ambient pressure when the second chamber is in the open or closed position and the first chamber is in the open or closed position. It can accommodate and maintain a controlled atmosphere. Moreover, due to the arrangement of this structure, the internal volume of the second chamber allows to receive a controlled atmosphere of gas at substantially ambient or sub atmospheric pressure when the second chamber is in the closed position and the first chamber is in the open or closed position. And keep it. In addition, the device of this structure allows the closed first chamber to receive and maintain a suitable processing medium at a pressure above ambient pressure (eg, approximately 5000 psig (345.8 bar) or less), while the second chamber Is maintained at or near atmospheric pressure or vacuum.

The first chamber is configured to receive one or more substrates. According to at least one embodiment, the substrate is transferred to the first chamber by continuously operating the second closure mechanism and the first closure mechanism. For example, the second closure mechanism is opened, the substrate is transferred into the first chamber through the open second closure mechanism, the substrate is loaded into the first chamber, and the first closure mechanism is closed. According to the above-described embodiment, in which the movable boundary for supporting and moving the substrate is provided, the substrate is transferred through the open second closing mechanism and loaded on the boundary, and the boundary moves through the second chamber in the closed state. In this closed state, the substrate is confined within the first chamber and in fluid isolation from the second chamber.

The second chamber may be designed to mechanically connect to the third chamber in a manner that prevents leakage. For example, the second closure mechanism can act as an interface between the second chamber and the substrate transfer module. The third chamber (eg, substrate transfer module) may accommodate the substrate handling robot in a controlled atmosphere maintained at ambient pressure or sub atmospheric pressure. With this structure, the second chamber can act as a buffer chamber between the high pressure first chamber and the third chamber at ambient or sub atmospheric pressure.

According to one embodiment of the invention, a microelectronic substrate processing apparatus includes a main chamber, a sub-chamber containing a microelectronic substrate, and a fluid conduit. The main chamber includes a main chamber wall surrounding the interior of the main chamber. The sub-chamber is disposed within the main chamber and includes a sub-chamber wall surrounding the interior of the sub-chamber. The sub-chamber has a boundary, and the sub-chamber interior is fluidly isolated from the main chamber. The fluid conduit is formed through the main chamber wall and is connected to the interior of the sub-chamber.

According to one aspect of this embodiment, the boundary of the sub-chamber wall has a substrate support surface that is movable relative to the sub-chamber inner surface. Alternatively, the boundary has a sub-chamber inner surface that is movable relative to the substrate support surface. Alternatively, the boundary has both a substrate support surface and a substrate inner surface, which surfaces can move relative to each other.

According to another embodiment of the present invention, the microelectronic substrate processing apparatus includes a main chamber and a movable boundary. The main chamber includes a main chamber wall surrounding the interior of the main chamber. The movable boundary is disposed inside the main chamber and can move between the first position and the second position. In the first position, the movable boundary forms at least partially a sub-chamber in fluid isolation from the interior of the main chamber.

According to another embodiment of the present invention, the microelectronic substrate processing apparatus includes a main chamber, a substrate support apparatus and a fluid conduit. The main chamber includes a main chamber wall and an inner surface surrounding the inside of the main chamber. The substrate support device can move between an open position and a closed position inside the main chamber. The substrate support apparatus has a substrate support surface. In the closed position, the substrate support surface and the inner surface of the main chamber at least partially form a sub-chamber in fluid isolation from the interior of the main chamber. The fluid conduit extends through the main chamber wall in connection with the sub-chamber. According to one aspect of this embodiment, the substrate processing apparatus further comprises a backstop device mechanically associated with the main chamber wall. Preferably, the backstop device comprises an actuator, a restraining member, and a flexible link mechanism for mutually coupling the actuator and the restraining member. As will be described in detail below, the backstop device is advantageous for maintaining a sealed environment enclosed in the sub-chamber.

According to yet another embodiment of the present invention, the microelectronic substrate processing apparatus includes a movable substrate support structure, a processing chamber, a main chamber and an actuator. The movable substrate support structure has a substrate support surface and a sealing element. The processing chamber is bounded by the substrate support surface and the sealing element. The main chamber surrounds or is at least adjacent to the processing chamber and surrounds the interior of the main chamber. The interior of the main chamber may be fluidically sealed with the processing chamber and the environment outside the main chamber. An actuator is coupled to the substrate support surface to control the processing chamber between an open state and a closed state. In the closed state, the sealing element provides a fluid isolated boundary between the processing chamber and the main chamber, and in the open state, the substrate support surface is exposed with respect to the interior of the main chamber.

According to a particular embodiment of the present invention, at least part of the substrate support device is made of a material of high yield strength. Preferably, the material with high yield strength is characterized by a yield strength of approximately 120 MPa or more, such as SA-723 steel. Also, in these or other embodiments, the inner surface of the main chamber wall and the substrate support surface are HASTELLOY C-22 or C-276 (obtained from Haynes International, Inc., Cocomo, Iowa, USA), AL-6XN (Obtained from Allegheny Ludlum Corporation, Pittsburgh, Pennsylvania, USA), alloy 25-6MO, nickel plated or cladding, or consist of a corrosion resistant material such as polytetrafluoroethylene (PTFE) or perfluoroalkoxy (PFA) Processed into materials.

According to another embodiment of the present invention, the substrate processing apparatus can be adjusted between the substrate processing mode and the substrate access mode. The substrate processing apparatus includes a main chamber, an interface component, and a boundary portion. The main chamber includes a main chamber wall surrounding the interior of the main chamber. The interfacial component is mounted in the main chamber and can be operated between an open state and a closed state. In the open state, the interfacial component allows access to the interior of the main chamber from an environment outside of the main chamber. In the closed state, the interfacial component seals the main chamber from the external environment. The boundary portion can move to a first position corresponding to the substrate processing mode within the main chamber and can alternately move to a second position corresponding to the substrate access mode. In the first position, the boundary at least partially defines a compressible sub-chamber that is sealingly separated from within the main chamber and is adapted to constrain the substrate. In the second position, the boundary can convey the substrate into and out of the main chamber through the interface component in the open state.

As will be described in detail below, the present invention can couple the substrate processing apparatus to other modules employed for substrate transfer and assembly purposes. In addition, embodiments of the present invention may be directly coupled to modules operating at atmospheric pressure or in vacuum. Thus, according to a further embodiment of the present invention, the substrate processing apparatus further includes a substrate handling module that surrounds an environment outside of the main chamber. In this embodiment, the interfacial component mutually couples the main chamber and the substrate handling module. According to one aspect of this embodiment, the substrate handling module has a substrate transfer chamber and a robotic end effector disposed therein. The interfacial component is adapted to allow movement of the end effector through the interfacial component and thus into and out of the substrate transfer chamber and the main chamber.

The present invention also provides a method for processing a microelectronic substrate. According to this method, an apparatus comprising a main chamber and a sub-chamber is provided. The main chamber includes a main chamber wall surrounding the interior of the main chamber. The sub-chamber includes a sub-chamber wall surrounding the sub-chamber interior and is disposed inside the main chamber. The sub-chamber has a boundary. The microelectronic substrate is introduced into the sub-chamber. The interior of the sub-chamber is fluidly isolated from the interior of the main chamber. The treatment medium is introduced into the sub-chamber. The treatment medium presses the sub-chamber interior to a pressure above atmospheric pressure and contacts the substrate.

It is therefore an object of the present invention to provide a method and apparatus for forming a fluidically isolated sub-chamber inside a large chamber, wherein the sub-chamber may be pressurized by the processing medium, while the large chamber is low pressure, atmospheric pressure. Or maintained in vacuum.

Another object of the present invention is to provide a method and apparatus for incorporating respective tools utilized for cleaning and assembling a substrate and a device formed on the substrate, integrating the cleaning process and the assembly process into a continuous process flow.

Another object of the present invention is to implement such integration by directly combining the respective cleaning and assembly tools such that the substrate to be treated is not exposed to ambient conditions between the cleaning and assembly steps.

The foregoing and other objects are achieved, in whole or in part, by the present invention.

Some objects and other objects of the present invention described above will become more apparent with reference to the accompanying drawings as will be described hereinafter.

1A is a schematic illustration of a state of being positioned in a substrate loading / removing state of a substrate processing apparatus provided according to the present invention;

FIG. 1B is a schematic illustration of a state of being placed in a high pressure treatment state of the substrate processing apparatus shown in FIG. 1A;

2A and 2B are schematic front views of a variant of the substrate processing apparatus shown in FIGS. 1A and 1B, showing an alternative method of forming a compressible sub-chamber in an adjacent main chamber, isolated from the main chamber. City Road,

2C and 2D are schematic plan views of a variant of the substrate processing apparatus shown in FIGS. 1A and 1B, with further alternatives capable of forming a compressible sub-chamber in the surrounding main chamber, isolated from the main chamber. Urban road showing way,

3A is a perspective view of a substrate processing apparatus constructed in accordance with a preferred embodiment of the present invention;

3B is a cutaway perspective view of the preferred embodiment shown in FIG. 3A,

4A-4D are sequential cutaway front views of a substrate processing apparatus in accordance with the present invention, illustrating adjustment of the substrate processing apparatus between its substrate loading / removing position and its high pressure substrate processing position;

5 is a top plan view of a backstop mechanism provided in the substrate processing apparatus according to the present invention;

6 is a schematic block diagram illustrating the integration of a stand-alone atmosphere substrate processing system and a substrate processing apparatus according to the present invention;

7 is a schematic block diagram illustrating integration of a clustered atmosphere substrate processing system with a substrate processing apparatus;

8 is a schematic block diagram illustrating the integration of a clustered vacuum substrate processing system with a substrate processing apparatus.

For purposes of describing the disclosure of the present invention, the term "communicate" (eg, where the first component is "connected" or "connected" with the second component) as used herein means 2 It is used to denote structural, functional, mechanical, optical, or hydrodynamic relationships or any combination of these relationships between two or more components or devices. Thus, the fact that one part is connected with the second part means that an additional part may exist between the first part and the second part and / or may be in operative relationship with or engaged with the first part and the second part. It is not intended to exclude that.

As used herein, the terms "atmospheric pressure", "substantially atmospheric pressure" and "similar atmospheric pressure" are pressures that are the same or substantially the same as the ambient pressure of the external environment of the device and / or system provided according to the present invention. It is to be adopted to mean. Thus, it will be appreciated that the exact atmospheric pressure value may vary depending, for example, on the height at which the device or system stays or on the environmental conditions maintained in the installation in which the device and / or system is installed. For example, atmospheric pressure at sea level is generally understood to be equal to 14.7 psia (psi absolute) or 0 psig (psi gauge), while atmospheric pressure values at higher locations will be somewhat lower. In addition, the term "atmospheric pressure" as used herein is intended to occur when a fluid, such as a suitable purge fluid (eg N ₂ ), circulates through an enclosed volume as described below. It is also contemplated to encompass as small a positive pressure as possible (eg, approximately 0 psig to 20 psig (1.01 bar to 2.39 bar)).

For convenience of description, the term “miniature electronic substrate” is used herein to refer to a very wide range of microscale workpieces that are generally processed in accordance with modern variations of such techniques, such as in the field of micromachining, as well as conventional integrated circuit (IC) assembly techniques. Used to cover. By way of example, and not intended to limit the scope of the present invention, a "microelectronic substrate" may include a single substrate; Combinations of substrates joined together in anodic bonding or adhesive bonding; One or more layers or films deposited thereon or otherwise formed (eg, conductive layers, dielectric layers, semiconductor layers, sacrificial layers, epitaxial layers, lattice-matching layers, adhesive layers, or structural layers), and / or Deposition techniques (e.g. film deposition, thermal oxidation, nucleation, electroplating, spin-on coating) and / or removal techniques (e.g. wet etching, dry etching, deep reactive ion etching (DRIE), ion bombardment) Base substrate in combination with one or more large-scale structures or masking features made by substitution or implantation techniques such as polishing, planarization, drilling, and / or doping.

The “microelectronic substrate” may be a precursor or source material, such as bulk silicon, a wafer sliced from a silicon boule, or a die made from a wafer. A "microelectronic substrate" may constitute a work-in-progress at some intermediate stage, or may constitute a complete or nearly complete device. A "miniature electronic board" is a "system on a chip" that combines mechanisms with logic circuits or data storage elements or devices such as IC chips, system functions such as detection and transmission on a single substrate and data processing functions. ), Microfluidic chips or "lap on a chip, light emitting diodes (LEDs) or laser diodes (LDs), micro-electromechanical systems that handle capillary-scale liquid flow or stamp biological sample arrays. MEMS) devices (e.g. relay switches, gyroscopes, accelerometers, capacitive pressure sensors, micropumps, inkjet nozzles), micro-opto-electro-mechanical system (MOEMS) devices [e.g. waveguides, variable optical attenuators (Ie VOA), optical shutter], opto-electronic device, optical device, flat panel display, or semiconductor biosensor or chemosensor.

There is no intention to limit the material composition of the "microelectronic substrate" in any way. Non-limiting examples include semiconductors, metals, and dielectrics. Other examples within these various classes include silicon, silicon-containing components (eg, oxides, carbides, nitrides and oxynitrides of silicon), III-V compounds (eg, GaN, AlN, InGaN), silicon-on Polymers such as insulators (SOI's), sapphire, photoresist compositions, glass, quartz, various oxides and other materials. The crystalline form of the "microelectronic substrate" or any part of the substrate may be significant monocrystalline, polycrystalline or amorphous.

As used herein, the terms “dense CO ₂ ”, “high density carbon dioxide”, “high density CO ₂ ” and “high density carbon dioxide” are used interchangeably and are used at 1 atm and 20 ° C. It means carbon dioxide having a density (g / ㎖) greater than the density. These terms refer to carbon dioxide that is generally gaseous at standard temperature (room temperature) and standard pressure (STP), and is at pressures generally above about 800 psi at about 21 ° C.

In general, densified carbon dioxide is carbon dioxide that has been under low temperature or pressure above atmospheric pressure to improve density. Unlike the carbon dioxide used in pressurized canisters that carry foaming fluids such as, for example, fire extinguisher fluids or shaving creams, the densified carbon dioxide is preferably maintained at very high pressures, for example approximately 800 psi and above. It has been found that using density rather than temperature or pressure alone is much more important to improving the solvent properties of carbon dioxide. Brogle , (1982) Chem. See Ind.-London 37; 385-390, which is incorporated herein by reference.

As used herein, the terms “supercritical” and “supercritical phase” refer to a critical temperature (eg 31 ° C. for carbon dioxide) and a critical pressure (eg , In the case of carbon dioxide, above 71 atm), at which point the material cannot condense into the liquid phase even under additional pressure.

As used herein, the terms "liquid carbon dioxide" and "liquid CO ₂ " are used interchangeably to mean carbon dioxide in liquid form. Carbon dioxide is in liquid form when the pressure is at least approximately 5.11 bar (corresponding to triple point) in the temperature range between approximately 216.8 K (corresponding to triple point) and approximately 304.2 K (corresponding to critical point). The density of the liquid carbon dioxide is about 0.7 to about 1.2 g / ml and the viscosity is about 0.07 mN / m 2. The liquid carbon dioxide can be distinguished from the carbon dioxide of other phases based on the surface tension, and the surface tension of the liquid carbon dioxide is approximately 5 dyne / cm.

As used herein, the term "supercritical fluidic carbon dioxide" means carbon dioxide at a critical pressure of 71 atm or at a critical temperature of 31 ° C. or higher, which can condense into the liquid phase even under additional pressure. none.

Densified carbon dioxide, preferably liquid or supercritical fluid phase carbon dioxide, may be employed in the methods and apparatus of the present invention. It will be appreciated that other molecules with densification properties may also be used alone or in mixtures. These molecules without limitation are methane, ethane, propane, ammonia, butane, n-pentane, n-hexane, cyclohexane, n-heptane, ethylene, propylene, methanol, ethanol, isopropanol, benzene, toluene, p- Xylene, sulfur dioxide, chlorotrifluoromethane, trichlorofluoromethane, perfluoropropane, chlorodifluoromethane, sulfur hexafluoride, ozone and nitrogen oxides.

As used herein, the term “fluid” is employed to mean any phase of a material that is not significantly solid. Solids can resist the application of shear stress by static deformation, while fluids do not. As long as the fluid is subjected to shear stress, the fluid will respond to movement and / or deformation. Thus, the term "fluid" encompasses flowable media such as liquids, vapors, and gases, for example. The term "fluid" also encompasses supercritical fluids. The term "fluid" also encompasses mixtures of liquid, vapor, gas and supercritical fluids and solid particulate materials, as in the case of particles involved in a fluid flow stream.

As used herein, the term "processing medium" generally refers to any fluid suitable for contacting a substrate for the purpose of carrying out certain procedures on the substrate.

The term "high pressure" as used herein generally encompasses pressures ranging from nominal static pressures above standard atmospheric pressure [0 psig (1.01 bar)] to approximately 5000 psig (345.8 bar).

As used herein, the term “vacuum” generally encompasses pressures ranging from approximately 10 ⁻⁷ Torr to atmospheric pressure.

As used herein, the term “processing” refers to an assembly process (eg, addition of layers, removal of layers, portions of layers, or portions of substrate lithography, metallization, deposition, and substrate or layer). Intentionally doping impurities, treatment processes (e.g., annealing, sintering, heating, coating, plating, reducing stress or strain), peeling processes (e.g., removing photoresist), cleaning processes (e.g., Removal of residues after etching, antireflective coatings, or other residues, contaminants or transition materials used in the manufacture of microelectronic components, and drying processes (e.g., removal of viscous surface fluids). It is employed to mean any procedure executed.

As used herein, the term "high strength material" means any material having a yield strength of approximately 120 MPa or more, the intention of being limited to, for example, SA-723 steel.

As used herein, the term “corrosion resistant material” means any material that is resistant to unwanted reactions resulting from contact with a treatment medium, such as a cleaning fluid. The "corrosion resistant material" is a solid (eg, HASTELLOY such as stainless steel, C-22 and C-276). Grade alloy, AL-6XN And super austenitic stainless steels such as alloy 25-6M, duplex stainless steel, MONEL (available from Inco Alloys International, Inc., Huntington, WV) Alloys, iron-containing metal materials comprising at least about 8 wt% nickel or at least about 10 wt% chromium, or applied barrier coatings or treatments). Non-limiting examples of suitable applied barrier materials include, but are not limited to, polytetrafluoroethylene (PTFE), polyetheretherketone (PEEK), perfluoroalkoxy (PFA), polymonochlorotrifluoroethylene (PCTFE) Polyvinylidene fluoride (PVDF), fluorinated semi-crystalline polymers, thin films / plating / cladding with nickel or chromium or nickel-chromium alloys.

Referring now to the drawings, like reference numerals refer to like parts throughout the specification, and in particular with reference to FIGS. 1A, 1B and 2A, a substrate processing apparatus 10 according to the present invention is schematically illustrated. . The substrate processing apparatus 10 may preferably be operated in one of two unique operating states, i.e., in a substrate loading / removing state or a high pressure substrate processing state, and may be adjusted between the two states. 1A shows a substrate processing apparatus 10 in a substrate loading / removing state. 1B shows the substrate processing apparatus 10 in a high pressure substrate processing state.

1A and 1B, the substrate processing apparatus 10 generally includes a main chamber 20 and a boundary 15 that can move within the main chamber 20. According to a preferred embodiment, the movable boundary 15 is provided by a substrate support surface connected to the movable substrate support device 40. The main chamber 20 has a main chamber structure 23 that forms the main chamber interior 25. The substrate support device 40 is configured to support a substrate S such as a wafer. The substrate S is typically provided in the form of a wafer having a diameter of 200 mm or 300 mm. However, the present invention is not limited to handling such standard size substrates, and can accommodate substrates having a diameter of approximately 50 mm to 450 mm. Substrate S may constitute a microelectronic substrate as broadly defined above, with or without a film, layer or microscale feature attached thereto. According to the preferred embodiment illustrated, the substrate support device 40 has a lowered position (a position corresponding to the substrate loading / removing state shown in FIG. 1A) and an elevated position (shown in FIG. 1B) within the main chamber interior 25. Position corresponding to the high pressure substrate processing state). Thus, the preferred movement of the substrate support device 40 generally moves along the central longitudinal axis L of the main chamber interior 25, ie as indicated by arrow A parallel to that axis.

With continued reference to FIGS. 1A and 1B, the substrate processing apparatus 10 also preferably includes a lower chamber 60. At least a portion of the substrate support device 40 is housed in the lower chamber 60. The lower chamber 60 has a lower chamber structure 63 forming a lower chamber interior 65. According to a preferred embodiment, the lower chamber interior 65 is physically and fluidly connected to the main chamber interior 25 by partition means such as a plate 73 oriented transversely with respect to the longitudinal axis L. It is separated. By suitable sealing means such as bellows 74 (see FIGS. 3B-4D), the lower chamber interior 65 and the main chamber interior 25 are reliably isolated. Thus, the lower chamber 60 is advantageously provided to prevent contaminants from moving into the main chamber interior 25. Such contaminants may be generated due to the operation of the moving parts inside the lower chamber 60, as described below. As best seen in FIGS. 3B-4D, the bellows 74 also isolates the external environment of the main chamber 20 and the substrate processing apparatus 10.

Subsequently, referring to FIGS. 1A and 1B, the substrate processing apparatus 10 further includes an interface component 75, such as a vacuum gate valve slit and an accompanying valve arrangement, which interface with the main chamber interior 25. A sealing interface is provided between the environment outside the substrate processing apparatus 10. Valve arrangements suitable for implementation as the interfacial component 75 are available from VAT Vakuumventile AG, Hager Cheha-9469, Switzerland. The interfacial component 75 may be open to introduce substrate handling devices such as robotic mechanisms (not shown in FIGS. 1A and 1B). When the interfacial component 75 is in the open state, the substrate handling apparatus can reach the main chamber interior 25 to load the substrate S onto the substrate support device 40, and the substrate S is processed. After the removal, the substrate S is removed from the inside of the main chamber 25. The movement of the substrate support device into and out of the main chamber interior 25 through the interface component 75 is indicated by arrow B.

The external environment described above may be a surrounding environment. More advantageously, however, the interface component 75 acts as an interface that directly seals between the substrate processing apparatus 10 and other substrate handling and / or processing modules. According to the invention, the substrate processing apparatus 10 may be coupled to a module operating under internal atmospheric pressure or vacuum. Thus, for example, the interface component 75 may be evacuated from the main chamber interior 25 and the central robotic chamber of the robot tool, or cluster tool, in an atmosphere forming part of the equipment front end module (EFEM). Fluid connection can be made between the interior of the state. In order to allow direct coupling of the main chamber interior 25 with an atmosphere or vacuum environment, the substrate processing apparatus 10 may cause the main chamber interior 25 to have an appropriate vacuum source and / or vent source 79. ) And an exhaust line 77 for pipe connection. Thus, the main chamber 20 may be evacuated prior to opening the interfacial component 75 in preparation for fluidly connecting the main chamber 20 to another vacuum exhaust environment. Alternatively, the main chamber 20 may be maintained at atmospheric or positive gauge pressure when it is advantageous to clean up contaminants from the main chamber 20 or to prevent contamination of the substrate s. To prevent contamination of the substrate, the substrate processing apparatus 10 may include a conduit 81 that allows a stream of inert gas, such as nitrogen, to flow from the inert gas source 83 into the main chamber. The inert gas can then flow from the main chamber interior 25 through the exhaust line 77 connected to the vacuum source or exhaust source 79. In addition, when the substrate processing apparatus 10 is coupled to the module of the atmosphere, the interfacial component 75 has a secondary seal with respect to the module of the atmosphere when leakage may occur during the high pressure cleaning process as described later. can act as a seal.

1B shows the substrate processing apparatus 10 in a high pressure substrate processing state. As described in more detail below, the substrate processing apparatus 10 may be designed to form a sub-chamber 90 disposed within the main chamber 20. The sub-chamber 90 is capable of withstanding high pressure (eg, pressure of approximately 5000 psig (345.8 bar)) while being fluidly isolated from the controlled, high-purity mini-environment maintained by the main chamber 20. Is maintained. The sub-chamber 90 is surrounded by an upper surface 90A of the sub-chamber, one or more lateral surfaces 90B of the sub-chamber, and a lower surface 90C of the sub-chamber. If the substrate S is a circular or substantially circular wafer, a single continuous lateral surface 90B of the sub-chamber may be provided to define the cylindrical volume forming the interior of the sub-chamber 90. . This preferred cylindrical profile in the interior is similar to the circular shape of the substrate S, the inner diameter of which is slightly larger than the diameter of the substrate S. This configuration minimizes the required volume of the sub-chamber 90 and improves the uniform distribution of the treatment medium (eg, cleaning fluid) to the surface of the substrate S, thereby increasing the efficiency and effectiveness of the desired treatment operation. To improve.

With continued reference to FIG. 1B in particular, at least one of the surfaces surrounding the sub-chamber 90 in order to enable the substrate processing apparatus 10 to be operatively adjustable between the substrate loading / removing state and the substrate processing state. (E.g., the movable boundary 15 described above with reference to FIG. 1A), or at least a portion of such a surface may be in sealing engagement with one or more of the other surfaces surrounding the sub-chamber 90. . Thus, according to the preferred embodiment shown, the upper surface 90A of the sub-chamber and the lateral surface 90B of the sub-chamber are fixed and the lower surface 90C of the sub-chamber is the lateral surface of the sub-chamber It can move in engagement with 90B. According to a preferred embodiment, the lower surface 90C of the sub-chamber is associated with the substrate support device 40, and the substrate support surface and any base component on which the substrate support surface is mounted (eg, FIG. 3B). To movable chamber base 45 shown in FIG. 4D. Thus, the sub-chamber 90 is preferably established by raising the substrate support device 40 and thus the substrate S itself to the raised position, in which the substrate S is sub-chamber 90 ) Is housed in a sealed manner.

In the substrate processing apparatus 10, FIGS. 1A and 1B in which the lower surface 90C of the sub-chamber constitutes the movable boundary 15, and the movable boundary 15 is mechanically associated with the substrate support device 40. It is not limited to the embodiment shown in. An alternative arrangement provided by the present invention is shown by way of non-limiting example in the schematic diagrams of FIGS. 2A-2D. According to these alternative structures, the movable boundary 15 is independent of the substrate support device 40, so that the substrate support device 40 does not have to function as the substrate raising mechanism. In FIG. 2A, the lateral surface 90B of the sub-chamber and the lower surface 90C of the sub-chamber are fixed and the movable boundary 15 serves to form the upper surface 90A of the sub-chamber 90. It is operated downward to seal engagement with the lateral surface 90B of the chamber. In FIG. 2B, the movable boundary 15 is a door or gate operated along a direction parallel to the longitudinal axis L to close the opening of the lateral surface 90B of the sub-chamber. In FIG. 2C, the movable boundary 15 is a door or gate operated in a substantially tangential direction to the longitudinal axis L in parallel with the plane on which the substrate S is placed (ie, the plane of the sheet containing FIG. 2C). . In FIG. 2D, the movable boundary 15 operates to rotate along a curved path about the longitudinal axis L. In FIG.

A particularly advantageous substrate treatment process that can be provided by the present invention is a high pressure substrate treatment process. The high pressure substrate cleaning process generally involves exposing the substrate S or at least the surface of the substrate to a treatment medium, which treatment medium may be supercritical CO ₂ , liquid CO ₂ or other chemistry as described above as examples. It is preferable that it is a densification fluid, such as a substance. For this purpose, referring again to FIG. 1B, the substrate processing apparatus 10 provides a processing medium supply line 101 which is guided into the sub-chamber 90 to transfer the processing medium from the processing medium source 103. do. Also provided is a processing medium return line 105 that delivers the fluid and any contaminating particulates accompanying the fluid from the substrate processing apparatus 10 to the processing medium return circuit 107. Preferably, the processing medium return line 105 extends through the body of the substrate support device 40.

Once the sub-chamber 90 is charged to high pressure by the processing medium, a significant pressure difference occurs between the sub-chamber 90 and the main chamber 20. By the high pressure interior of the sub-chamber 90, using a powered actuator (not shown in FIGS. 1A and 1B, but described below) employed to move the substrate support device 40 to the raised position. Resisting the applied force can help keep sub-chamber 90 closed. Further, the raised position of the substrate support device 40 is preferably associated with an increased clearance between the bottom 109 of the substrate support device 40 and the bottom 109 of the lower chamber 60. More preferably, and as will be described in detail below, a backstop mechanism 140 is provided for inserting the restraining member 143 into the increased gap to maintain the substrate support device 40 in the raised position. By means of a mechanism that assists, thereby maintaining a sealed high pressure environment defined by the sub-chamber 90 and driving the axial load and / or substrate support device 40 caused by the substrate support device 40. The generated load can be reduced. The movement of the restraining member 143 radially inwards toward the restraint position and the movement outwards radially outward toward the inactive position is indicated by arrow C. FIG.

Referring now to FIGS. 3A and 3B, a preferred structural configuration of the substrate processing apparatus 10 is shown. As best seen in FIG. 3B, the substrate processing apparatus 10 is positioned to operate in a substrate processing state in which the sub-chamber 90 is present in the main chamber 20. Preferably, the sub-chamber 90 has a volume of about 10 ml to about 10 l and a diameter of about 50 mm to about 450 mm. The main chamber structure 23 of the substrate processing apparatus 10 is composed of an upper section 27 serving as a main chamber lid, and a lateral section, that is, the main chamber wall 29 and the intermediate plate 73, all of which are Cooperate to surround the main chamber interior 25. The lateral section 29 of the main chamber 20 preferably has a lateral inner surface 29A that at least partially defines the main chamber interior 25. As shown, the lateral medial side 29A is cylindrical around the central longitudinal axis of the main chamber interior 25. This cylindrical profile improves gas flow through the main chamber interior 25 and minimizes the number of sharp structural features to prevent the accumulation of contaminants in the main chamber 20. A hole 29B formed through the lateral section 29 allows access between the interface component 75 (see FIGS. 1A-2D) and the main chamber interior 25. The lower chamber structure 67 surrounds the lower chamber interior 65 and consists of a flanged region 67A, a lateral region 67B and an outer end region 67C. In a manner similar to the configuration of the pressure vessel, the main structure of the substrate processing apparatus 10 may include the upper section 27, the lateral section 29, the intermediate plate 73, and the lower chamber 60 with appropriate fasteners 111A, And assembled by 111B). The fasteners 111A, 111B may comprise high strength bolts, for example, which are oriented parallel to the longitudinal axis of the main chamber interior 25, and the flanged area of the lower chamber structure 67 ( 67A) and into the flanged area 27A of the upper section 27 of the main chamber structure 23. Preferably, the upper section 27 and the lateral section 29 are made of a high strength material and can withstand the high pressure generated in the sub-chamber 90. One example of a suitable high strength material is SA-723 steel.

As most clearly shown in FIG. 3B, the substrate support device 40 preferably has an elongate member axially oriented, such as the shaft 43, and a chamber base 45 attached to the top of the shaft 43. It includes. Both the outer end region 67C of the lower chamber structure 67 and the intermediate plate 73 have centrally arranged axial bores 113 and 115, respectively, through which the shaft 43 moves. The shaft 43 has an enlarged diameter portion 43A, which may be an annular component forcibly fitted to the shaft 43. The moving range of the enlarged diameter portion 43A is limited to the lower chamber interior 65 between the intermediate plate 73 and the outer end region 67C. When the substrate support device 40 moves downward in response to the force exerted by the pressurized interior of the sub-chamber 90, the enlarged diameter portion 43A comes into contact with the backstop suppressing member 143. Thus, the backstop suppression member 143 provides a lower limit for the downward movement of the substrate support device 40. As best seen in FIG. 3A, the lateral region 67B of the lower chamber structure 67 has a bore 117, with a link member (described below) associated with the backstop suppression member 143 through the bore. Is extended. In addition, a bellows 74 disposed annularly around the shaft 43 is connected between the intermediate plate 73 and the enlarged diameter portion 43A. As described above, the bellows 74 provides a seal between the main chamber 20 and the lower chamber 60 as well as between the main chamber 20 and the surrounding environment, thereby allowing the operation of the components within the lower chamber 60. Prevents contamination of the main chamber 20 due to.

3A and 3B, the chamber base 45 of the substrate support device 40 is moved axially between the raised position and the lowered position by the shaft 43, and thus the substrate processing apparatus 10. Move between the substrate loading / removing state and the substrate processing state. Thus, according to a preferred embodiment, a substrate pressing device 120 such as a chamber chuck 45 and / or a wafer chuck or platen (see FIGS. 4A-4D) mounted to the chamber base 45 is shown in FIG. 1B. The lower surface 90C of the formed sub-chamber. Preferably, the uppermost region of the chamber base 45 has a corrugated or concave section 45A, in which the substrate can be placed. Due to the concave section 45A, the substrate pressing device 120 (see FIGS. 4A-4D) can be mounted to the chamber base 45. The inner surface of the upper section 27 of the main chamber 20 also has a concave section 27B which alternately acts as an upper boundary inside each of the main chamber 20 and the sub-chamber 90. When the substrate processing apparatus 10 is in a substrate processing state, the chamber base 45 is sealed in an upper section 27 in a sealed manner such that the concave sections 27B and 45A cooperate to partially form the sub-chamber 90. To interlock. Preferably, all surfaces wetted in direct contact with the processing medium (such as the respective inner surfaces of the upper section 27 and the chamber base 45) are made of a corrosion resistant material. An example of a suitable corrosion resistant material that is not intended to be limiting is HASTELLOY C-22 or C-276, alloy AL-6XN Or super austenitic stainless steel such as 25-6MO, MONEL Alloys and the like. Alternatively, the surface exposed to the treatment medium is coated or plated with a corrosion resistant barrier material such as PTFE, PCTFE, PVDF, nickel or chromium.

Further structural and operational features of the substrate processing apparatus 10 will now be described with reference to FIGS. 4A-4D. The substrate pressing device 120 is mounted in a concave section 45A of the chamber base 45. The substrate pressing device 120 has a substrate support device 120A, and the substrate can be held in place by using a desired fixation technique apparent to those skilled in the art after reviewing the disclosure of the present invention. An internal fluid passageway 120B formed in the substrate pressing device 120 is in fluid communication with the process medium outlet conduit 123. The process medium outlet conduit 123 preferably has a lower section 43B of the shaft 43 extending through the substrate support device 40 and passing through the axial bore 115 of the lower chamber 60. . This eliminates the need to form additional fluid bores that pass through the structure of the substrate processing apparatus 10. When the substrate processing apparatus 10 is in a substrate processing state (see for example FIGS. 4C and 4D), the sub-chamber 90 is integrally coupled with the processing medium flow path. The portion of the process medium flow path upstream of the sub-chamber 90 is formed through the process medium source 103, the process medium supply line 101, and the upper section 27 of the main chamber 20. 127 is provided. The portion of the processing medium flow path downstream of the sub-chamber 90 may include an internal passageway 120B, an outlet conduit 123, a processing medium return line 105, and a processing medium return circuit 107 of the substrate presser 120. ). The radial passage 129 formed through the lateral section 29 also fluidly connects between the main chamber interior 25 and the vacuum source and / or the exhaust source 79 via the exhaust line 77. Another radial passage (specifically not shown) formed through the lateral section 29 of the main chamber 20 is via the line 81 a main chamber interior 25 and an inert gas (eg N2) source. Fluid connection between (83). Preferably, these two radial passages are oriented at approximately 60 degrees with respect to the central longitudinal axis of the main chamber interior 25.

As shown in FIGS. 4A-4D, a linear actuator 49 is coupled to the lower section 43B of the shaft 43 of the substrate support device 40. The linear actuator 49 preferably includes a stepper motor and a worm gear, but with a pneumatically driven or hydraulically driven piston, or with any other or other suitable device apparent to those skilled in the art after reviewing the present disclosure.

4A-4D also show additional details relating to the backstop mechanism 140 provided in accordance with the present invention. The main components of the backstop mechanism 140 include a backstop suppression member 143, a linear backstop actuator 145, and a link mechanism 147 that interconnects the suppression member 143 and the backstop actuator 145. . The backstop mechanism 140 may consist of one or more units, each unit having a corresponding backstop suppression member 143, a linear backstop actuator 145, and a link mechanism 147. The backstop actuator 145 preferably pneumatically drives the link mechanism 147 and the backstop suppression member 143, and thus has a suitable air cylinder and piston arrangement. Alternatively, the backstop actuator 145 may be pneumatic or may include a stepper motor and suitable force transmission means such as a lead screw. The structure of the containment member 143 is preferably composed of a material suitable to withstand the compressive forces imparted by the high pressure environment established within the sub-chamber 90. One example of a material suitable as the containment member 143 includes SA-723 steel.

Continuing with reference to FIGS. 4A-4D, the backstop actuator 145 is disposed outside the lower chamber 60, and the link mechanism 147 is (as shown in FIGS. 3A and 5 and described above). The thickness of the lateral regions 67B of the lower chamber 60 extends through the one or more bores 117. The link mechanism 147 is designed to appropriately transmit the power generated by the backstop actuator 145 to the suppression member 143. The link mechanism 147 and the restraining member 143 move in a substantially transverse direction with respect to the advancing direction of the substrate support device 40, and thus in a transverse direction with respect to the longitudinal axis of the main chamber interior 25. do. At the same time, the link mechanism 147 is designed to elastically yield so as to deflect the restraining member in response to the load transmitted from the sub-chamber 90 through the substrate support device 40. This direction of yield or deflection has a significant component along the direction parallel to the advancing direction of the substrate support device 40. Thus, the adaptability of the link mechanism 147 prevents a failure mode that may be generated by the backstop mechanism 140 due to the cylindrical dynamic load applied to the substrate support device 40 during operation. At the same time, however, the error of adaptability does not have a detrimental effect on the proper functioning of the suppression member 143, so that the raised position of the substrate support device 40 and thus between the sub-chamber 90 and the main chamber 20 Maintain an isolated interface.

According to the preferred embodiment shown in FIG. 5, the link mechanism 147 has one or more solid rods 147A, 147B. More preferably, the link mechanism 147 is provided with a pair of rods 147A and 147B. Each rod 147A, 147B has a length of about 10 to about 50 mm (preferably 35 mm) and a diameter of about 1 to about 5 mm (preferably 3 mm). Preferably, each rod 147A, 147B is made of AlSI 6150 spring steel.

Referring now particularly to FIG. 4A, there is shown a substrate processing apparatus 10 in a substrate loading / removing state, in which the substrate support apparatus 40 retracts to the lowered position. In this position, the substrate pressing device 120 and any substrate mounted thereon are exposed to an enclosed environment in the main chamber interior 25, and no separate sub-chamber is completely formed. The substrate pressing device 120 is disposed at a height that is operatively aligned with the interface component 75. In this position, the end effector of the robot proceeds laterally through the open interface component 75 into the area of the main chamber 20 to load the substrate into the substrate presser 120 prior to processing. The substrate may be removed after the treatment operation. It will be appreciated that the substrate support device 40 provides only the z-axis movement necessary for orientation and proper manipulation of the substrate within the main chamber 20. That is, the end effector of any robot employed to load and / or remove the substrate need only be able to move entirely (or at least essentially) in the x-y plane.

The use of a structure that combines substrate support and synergism provides several advantages. First, the robotic mechanism used in conjunction with the substrate processing apparatus 10 for a substrate switching task may have a simpler and less expensive structure compared to a robot operating entirely in three-dimensional space. With respect to this first advantage, the structure makes it easy to integrate the substrate processing apparatus 10 and other enclosed modules, such as a vacuum operated central handler. Robots with the vacuum module typically have limited vertical movement capability. Finally, the volume of the sub-chamber 90 is optimally minimized because the sub-chamber 90 does not need to be sized to accommodate the proper z-axis movement of the robotic mechanism.

Referring now particularly to FIG. 4B, a substrate processing apparatus 10 in a high pressure substrate processing state is shown, where the substrate support apparatus 40 extends to a fully raised position to form the sub-chamber 90. Also in this raised position, a sufficient axial gap is generated between the enlarged diameter portion 43A of the shaft 43 and the outer end region 67C of the lower chamber 60 so that the backstop suppression member 243 is radiused into the gap. Direction can be inserted inward. The isolation between the sub-chamber 90 and the main chamber 20 is improved or ensured by mounting the appropriate sealing element 151 on the chamber base 45.

According to a preferred embodiment, an annular space 155 is formed in the radial direction between the substrate pressing device 120 and the annular shoulder 45B of the chamber base 45, and the ring sealing element 151 is formed in such an annular space ( 155). Once the sub-chamber 90 is pressurized with the processing medium, any processing medium into the annular space 155 through the interface between the substrate pressing device 120 and the inward surface of the upper section 27 of the main chamber 20. Leaks. The leaked processing medium then faces the sealing element 151, thereby preventing the leaked processing medium from escaping into the main chamber interior 25. Preferably, the sealing element 151 is in the form of a cup seal rather than a simple o-ring or gasket. The inner surface of the cup seal 151 facing the substrate pressing device 120 has a concave shape. This type of seal is a self-sealing seal that responds to fluid pressure. Thus, the concave portion of the annular space 155 and the cup seal 155 is pressed by the leaked medium, and the concave portion is expanded and contracted with respect to the chamber base 45 and the upper section 27 to improve the quality of the seal. do. For this purpose, the cup seal 155 is made of a material that is flexible and chemically resistant when exposed to the chemical composition of the treatment medium and capable of maintaining a pressure difference of approximately 5000 psig (345.8 bar) or higher. Non-limiting examples of suitable materials for the cup seal 151 include PTFE and PCTFE. Suitable cup seals 151 include MSE available from Greene, Tweed & Co., Culphville, Pennsylvania, USA. There is a seal. As an alternative to the face seal oriented cup seal structure, examples of other sealing elements 151 include piston seal oriented cup seals and O-ring seals.

Referring now particularly to FIG. 4C, the backstop suppression mechanism 143 is in its fully extended active position within the gap between the enlarged diameter portion 43A of the shaft 43 and the outer end region 67C of the lower chamber 60. Is shown. In this active position, each restraining member 143 contacts the bottom of the enlarged diameter portion 43A to prevent unwanted retraction of the substrate support device 40 during pressurization of the sub-chamber 90, thus The substrate is held in place during the cleaning process.

4D illustrates the operation of the flexible feature integrated into the backstop mechanism 140 after the sub-chamber 90 is filled with pressurized medium. In response to the force exerted by the high pressure volume of the sub-chamber 90, the flexible link mechanism 147 has a backstop restraining member 143 having a bottom surface of the enlarged diameter portion 43A and an outer end region of the lower chamber 60. All of them were deflected to a point in compression contact at 67C. The link mechanism 147 is free of appropriate size (eg, approximately 0.5 mm) in the substrate pressing device 120 without applying unwanted stress to the link mechanism 147 and / or each backstop actuator 145. Biased to provide free play.

The operation of the substrate processing apparatus 10 will now be described with reference to FIGS. 4A-4D. The substrate S is initially provided in the external environment of the substrate processing apparatus 10. The external environment is generally a containment environment with a substrate handling robot and may be in an atmospheric state or a vacuum evacuation state. An example of an external atmosphere environment is an EFEM (see, eg, EFEM 210 of FIG. 6). An example of an external vacuum evacuation environment is a vacuum cluster tool (eg, the cluster tool 410 of FIG. 8). The external environment is coupled to the substrate processing apparatus 10 through the interface component 75. As will be appreciated by those skilled in the art, the interface component 75 has an internal gate that is movable between an open position and a closed position, allowing access to the main chamber interior 25 through the interface component 75. Prior to loading the substrate S into the substrate processing apparatus 10, the substrate S is generally masked or otherwise involved in applying one or more assembly processes (e.g., applying photoresist, developer and UV radiation). Lithography techniques, etching, ashing, film deposition, electroplating, bonding, planarization, ion implantation, doping, micromachining, polishing, stress relief, heating, etc.) are performed to require subsequent cleaning or surface treatment processes or It will also be understood that it is advantageous.

A plurality of different preliminary steps can be performed before loading the substrate S into the substrate processing apparatus 10. For example, the main chamber interior 25 may be prepared before being fluidly coupled with the external environment. The manner in which the main chamber interior 25 is prepared depends on the substrate processing apparatus 10 interacting with the vacuum module or the atmosphere module. When the substrate processing apparatus 10 is coupled to a vacuum module, the main chamber interior 25 may be evacuated and cleaned by establishing a fluid connection with the vacuum source / exhaust source. When the substrate processing apparatus 10 is connected to the atmosphere module, the main chamber interior 25 may be cleaned by circulating an inert gas such as N ₂ through the main chamber interior 25 as described above.

In addition, the processing medium may be prepared prior to loading the substrate S into the substrate processing apparatus 10 or at least prior to injecting the processing medium into the sub-chamber 90 in connection with the high pressure cleaning process described herein. There may be a need. In the case of carrying out the cleaning process, the treatment medium utilized in the present invention may remove unwanted residual material generated on the substrate S to remove unwanted material into the sub-chamber 90 through high pressure injection of the cleaning fluid. It may be any fluid suitable for cleaning the substrate S by solvating and / or impinging the surface of the substrate S. The cleaning fluid may have a single composition or may be a mixture, solution or emulsion of multiple components. According to a preferred embodiment, the cleaning fluid is a dense liquid CO ₂ which is heated and pressurized to a supercritical state before being introduced into the sub-chamber (S). Additives such as co-solvents, reactants, passivating agents, desiccants, oxidants, bases, surfactants or other chemicals flow through feed line 101 before being injected into sub-chamber 90. It may be introduced into the CO ₂ stream or otherwise combined with the CO ₂ stream. The temperature and pressure required to obtain supercritical CO ₂ depends on whether such additives are present. In the case of pure liquid CO ₂ , the supercritical temperature is 31 ° C. and the supercritical pressure is 71 atmospheres. According to a preferred embodiment, the CO ₂ is supplied at a pressure of approximately 1500 to approximately 5000 psig (104.4 to 345.8 bar).

Once the processing medium and main chamber interior 25 are ready, the substrate support device 40 moves to the lowered position shown in FIG. 4A, and the interface component 75 is opened. The robotic substrate handling mechanism carries the substrate S through the interface component 75 and places the substrate S on the substrate pressing device 120. Substrate pressing device 120 may be designed to employ any number of known fixation techniques. One example is to generate a suction force on the top surface (120A) of the substrate pressing device (120). After the substrate S is fixed to the substrate pressing device 120, the interface component 75 is closed and the substrate supporting device 40 is raised to the raised position shown in FIG. 4B. In this position, a sub-chamber 90 is formed to surround the substrate S. Thereafter, the backstop mechanism 140 is operated to insert the suppression member 143 into the position shown in FIG. 4C to support the substrate support device 40 in the axial direction and to support the sub-chamber 90 and the main chamber interior ( 25) maintain the integrity of the seal. At this position, the substrate S is in a cleaning ready state. One or more valves appropriately located along the treatment medium inlet line 101 are opened and the treatment medium is pumped into the sub-chamber 90. Sub-chamber 90 may be pressurized by the treatment medium at a pressure ranging from 20 psig to 5000 psig (2.39 bar to 345.8 bar). Advantageously, prior to pressurization, the processing medium may flow into the sub-chamber 90 at low pressure, and air from the sub-chamber 90 and the associated fluid path upstream and downstream of this sub-chamber 90 May be sent to the return circuit 107 to clean up. During the high pressure cleaning process, if necessary, the sub-chamber 90 can be rapidly pressurized or depressurized in a periodic manner to generate a pressure pulse, thereby improving the cleaning effect. The pressurization phase of this cycle may be advantageous when removing unwanted materials (such as photoresist or etch residue deposits that soften during the pressurization phase) from microscale features such as biases or trenches formed in the substrate S.

Once the cleaning process is complete, the valve appropriately located in the cleaning medium return path can be opened so that the processing medium can flow out of the sub-chamber 90 to the return circuit 107. The outflow step may include circulating additional pure treatment medium through the sub-chamber 90. Thereafter, the substrate processing apparatus 10 is readjusted to the loading / removing state as shown in FIG. 4A by moving the substrate supporting apparatus 40 to the lowered position as described above. Thereafter, the interface component 75 is opened to introduce the substrate handling mechanism into the main chamber interior 20 to remove the substrate S from the substrate processing apparatus 10 for further processing in another module as needed. A component (described above) for regenerating at least a portion of the processing medium used to clean the substrate S is provided to separate contaminants from the processing medium and recycle into the system to reuse the purified processing medium.

Referring now to FIGS. 6-8, a system-level embodiment is shown in which the substrate processing apparatus 10 is integrated with a processing medium distribution circuit and other substrate processing modules. 6 illustrates a standalone atmosphere system 200. In this system 200, the substrate processing apparatus 10 is directly coupled to the “equipment front end module”, ie the EFEM 210, via the interface component 75, which module is coupled with the atmosphere substrate transfer module 215. And a substrate loading and / or sorting device 220. The substrate transfer module 215 may be of a conventional construction and has an enclosure 215A and a substrate transfer robot 225. The substrate transfer module 215 Typically, it is coupled to a substrate loading device 220 according to standard mechanical interface (SMIF) techniques. The substrate loading device 220 is a conventionally designed wafer cassette or pod device (eg, SMIF pod, or " FOUP "). front opening unified)] By this configuration, the robot 225 can transfer the substrate from the substrate loading apparatus 220 to the substrate processing apparatus 10 through the interface component 75.

In FIG. 6, the processing medium distribution circuit coupled to the substrate processing apparatus 10 provides the processing medium source 103 of FIGS. 1B and 4A-4D to supply pressurized processing media from the mass storage to the substrate processing apparatus 10. Supply / pressurization subsystem 230, which may be associated with the present invention. According to a preferred embodiment, the processing medium supplied from this subsystem 230 is passed through a suitable heat exchanger 235 to heat the processing medium at or above the supercritical temperature. As described above, an additive injection subsystem 240 is provided that mixes the additive with the treatment medium. There is also a circulation subsystem 245 for regenerating and purifying the processing medium used as described above. Finally, the decompression subsystem 250 (which may be associated with the vacuum source / exhaust source 79 of FIGS. 1B and 4A-4D) cleans, discharges and / or evacuates the substrate processing apparatus 10. Acts as an exhaust system for

7 illustrates a clustered atmosphere system 300. In such a system 300, the EFEM 310 includes a clusterable atmosphere substrate transfer module 315 and a plurality of substrate loading devices 320A, 320B, two of which are shown. The substrate transfer module 315 again generally includes an enclosure 315A and a substrate transfer robot 325. System 300 also provides a plurality of substrate processing apparatuses 10A, 10B (two of which are shown) coupled to substrate transfer module 315 through respective interfacial components 75A, 75B. By way of example, supply / pressurization subsystem 330 and decompression subsystem 350 are common to all substrate processing apparatuses 10A, 10B, and additive injection subsystems 340A, 340B, heat exchangers 335A, Dedicated elements such as 335B and circulation subsystems 345A, 345B are provided in each substrate processing apparatus 10A, 10B.

8 illustrates a clustered vacuum system 400. In such a system 400, the substrate processing apparatus 10 is directly coupled to the vacuum cluster tool 410. The vacuum cluster tool 410 may be of conventional construction and has an enclosure 410A and a substrate transfer robot 425. The vacuum exhaust volume maintained by the enclosure 410A may employ one or more loadlock devices 420A, 420B that serve as an interface between the vacuum cluster tool 410 and a suitable substrate loading module (not shown). There is a need. One or more microscale element assembly modules 427A, 427B are coupled to the vacuum cluster tool 410 by respective seal valves 429A, 429B and are accessible by the substrate transfer robot 425. The device assembly modules 427A and 427B may be adapted to perform an assembly procedure on the substrate before or after the above-described substrate cleaning process performed by the substrate processing apparatus 10. Non-limiting examples of possible assembly procedures include physical vapor deposition, chemical vapor deposition, vaporization, sublimation, oxidation, carbonization, nitriding, doping, annealing, wet or dry etching, ashing, microscale assembly, single layer self assembly, Lithography, wafer-wafer bonding or encapsulation, micromachining, planarization, and the like. The processing medium distribution circuits (elements 430-450) may be arranged in a manner similar to that shown in FIGS. 6 and 7.

From the above description of each system 200, 300, 400 shown in FIGS. 6 to 8, the present invention provides a substrate processing apparatus 10 and any number and type of desired treatments in a high purity atmosphere environment or a vacuum environment. It will be appreciated that there is sufficient flexibility to enable direct integration between other substrate processing modules operating in conjunction with the steps. The transfer of substrates between these various processing modules does not require exposing the substrate to the surrounding environment, thereby optimizing any combination of processing media and assemblies contemplated by the user of such a system.

It will be understood that various specific configurations of the invention can be altered without departing from the scope of the invention. In addition, the foregoing description is only illustrative and is not limitative, and the present invention is limited only by the following claims.

Claims (77)

In the microelectronic substrate processing apparatus, A main chamber having a main chamber wall surrounding its interior, A sub-chamber containing a microelectronic substrate, the sub-chamber wall enclosing the interior of the sub-chamber and disposed within the main chamber, the boundary being fluidly isolated from the main chamber; The sub-chamber, A fluid conduit formed through the main chamber wall and connected to the interior of the sub-chamber Microelectronic Substrate Processing Apparatus. The method of claim 1, The sub-chamber is configured to maintain a pressure inside the sub-chamber higher than the main chamber. Microelectronic Substrate Processing Apparatus. The method of claim 2, The sub-chamber is adapted to maintain the interior of the sub-chamber above atmospheric pressure, while the main chamber is substantially at atmospheric pressure. Microelectronic Substrate Processing Apparatus. The method of claim 2, The sub-chamber is adapted to maintain the interior of the sub-chamber above atmospheric pressure, while the main chamber is below atmospheric pressure. Microelectronic Substrate Processing Apparatus. The method of claim 1, A processing medium source connected to the sub-chamber interior through a fluid conduit to pressurize the sub-chamber interior to a higher pressure than the main chamber interior; Microelectronic Substrate Processing Apparatus. The method of claim 1, A vacuum source in fluid communication with the interior of the main chamber; Microelectronic Substrate Processing Apparatus. The method of claim 1, An exhaust part in fluid communication with the interior of the main chamber; Microelectronic Substrate Processing Apparatus. The method of claim 1, A gas source in fluid communication with the interior of the main chamber; Microelectronic Substrate Processing Apparatus. The method of claim 1, The fluid conduit formed through the main chamber wall is a fluid inlet conduit, and the substrate processing apparatus further comprises a fluid outlet conduit in fluid communication with the interior of the sub-chamber. Microelectronic Substrate Processing Apparatus. The method of claim 1, A sealing element disposed at an interface between the sub-chamber and the main chamber interior to promote fluid isolation between the sub-chamber interior and the main chamber interior; Microelectronic Substrate Processing Apparatus. The method of claim 10, The sealing element is supported by a substrate support surface disposed in the sub-chamber Microelectronic Substrate Processing Apparatus. The method of claim 1, A hermetically sealed gate providing an interface between the interior of the main chamber and the environment outside the main chamber, the gate being adapted to selectively provide access to the interior of the main chamber. Microelectronic Substrate Processing Apparatus. The method of claim 1, The sub-chamber interior has a volume of approximately 10 ml to approximately 10 l. Microelectronic Substrate Processing Apparatus. The method of claim 1, The sub-chamber interior has a diameter of about 50 mm to about 450 mm Microelectronic Substrate Processing Apparatus. The method of claim 1, The boundary of the sub-chamber wall may move between a closed position and an open position within the interior of the beauty chamber, in which the boundary at least partially surrounds the interior of the sub-chamber and at least the interior of the sub-chamber from the main chamber. Partially fluidly isolated Microelectronic Substrate Processing Apparatus. The method of claim 15, In the closed position of the boundary, the boundary cooperates with the inner surface of the processing apparatus to surround the sub-chamber interior to fluidly isolate the sub-chamber interior from inside the main chamber. Microelectronic Substrate Processing Apparatus. The method of claim 15, The boundary of the sub-chamber wall is (i) a substrate support surface movable relative to the sub-chamber inner surface, or (ii) a sub-chamber inner surface movable relative to a substrate support surface disposed inside the sub-chamber, or ( Iii) any one of a substrate support surface and a sub-chamber inner surface, The substrate support surface and the sub-chamber inner surface are movable relative to each other. Microelectronic Substrate Processing Apparatus. In the microelectronic substrate processing apparatus, A main chamber having a main chamber wall surrounding its interior, B) at least partially forming a sub-chamber disposed within the main chamber and movable between a first position and a second position, in the first position having a sub-chamber interior fluidly isolated from the main chamber interior; Including movable boundary Microelectronic Substrate Processing Apparatus. The method of claim 18, And a fluid conduit extending through the main chamber wall in communication with the sub-chamber interior. Microelectronic Substrate Processing Apparatus. The method of claim 19, The fluid conduit formed through the main chamber wall is a fluid inlet conduit and the processing device further comprises a fluid outlet conduit in fluid connection with the interior of the sub-chamber. Microelectronic Substrate Processing Apparatus. The method of claim 18, A processing medium source connected to the sub-chamber interior to pressurize the sub-chamber interior to a higher pressure than the main chamber interior; Microelectronic Substrate Processing Apparatus. The method of claim 18, At the first position of the movable boundary, the sub-chamber interior has a higher pressure than the main chamber interior. Microelectronic Substrate Processing Apparatus. The method of claim 22, At the first position of the movable boundary, the pressure inside the sub-chamber exceeds atmospheric pressure and the pressure inside the main chamber is substantially atmospheric pressure. Microelectronic Substrate Processing Apparatus. The method of claim 22, At the first position of the movable boundary, the pressure inside the sub-chamber is above atmospheric pressure and the pressure inside the main chamber is below atmospheric pressure. Microelectronic Substrate Processing Apparatus. The method of claim 18, In a first position of the movable boundary, the boundary cooperates with an inner surface of the processing apparatus to surround the sub-chamber interior to fluidly isolate the sub-chamber interior from inside the main chamber. Microelectronic Substrate Processing Apparatus. The method of claim 18, The movable boundary may include: (i) a substrate support surface movable relative to the sub-chamber inner surface, or (ii) a sub-chamber inner surface movable relative to the substrate support surface disposed inside the sub-chamber, or (iii) a substrate support. One of a surface and a sub-chamber inner surface, wherein the substrate support surface and the sub-chamber inner surface are movable relative to each other. Microelectronic Substrate Processing Apparatus. The method of claim 18, A vacuum source in fluid communication with the interior of the main chamber; Microelectronic Substrate Processing Apparatus. The method of claim 18, An exhaust part in fluid communication with the interior of the main chamber; Microelectronic Substrate Processing Apparatus. The method of claim 18, A gas source in fluid communication with the interior of the main chamber; Microelectronic Substrate Processing Apparatus. The method of claim 18, A sealing element disposed within the main chamber, wherein in the first position of the movable boundary, the sealing element fluidly isolates the sub-chamber interior from the main chamber interior. Microelectronic Substrate Processing Apparatus. The method of claim 30, The sealing element is supported by a substrate support surface disposed in the sub-chamber Microelectronic Substrate Processing Apparatus. The method of claim 18, A hermetically sealed gate providing an interface between the interior of the main chamber and the environment outside the main chamber, the gate being adapted to selectively provide access to the interior of the main chamber. Microelectronic Substrate Processing Apparatus. The method of claim 18, The sub-chamber interior has a volume of approximately 10 ml to approximately 10 l. Microelectronic Substrate Processing Apparatus. The method of claim 18, The sub-chamber interior has a diameter of about 50 mm to about 450 mm Microelectronic Substrate Processing Apparatus. In the microelectronic substrate processing apparatus, A main chamber having a main chamber wall surrounding the inside of the main chamber and having an inner surface; B) move between an open position and a closed position inside the main chamber and have a substrate support surface, in which the substrate support surface and the inner surface have a sub-chamber fluid isolated from the interior of the main chamber. A substrate supporting apparatus at least partially formed, A fluid conduit extending through the main chamber in communication with the sub-chamber Microelectronic Substrate Processing Apparatus. 36. The method of claim 35 wherein At least a part of the substrate support device is made of a material having high yield strength Microelectronic Substrate Processing Apparatus. 36. The method of claim 35 wherein At least a part of the main chamber wall is made of a material of high yield strength Microelectronic Substrate Processing Apparatus. 36. The method of claim 35 wherein The inner surface of the main chamber wall and the substrate support surface are made of a corrosion resistant material Microelectronic Substrate Processing Apparatus. 36. The method of claim 35 wherein The inner surface of the main chamber wall and the substrate support surface are treated with a corrosion resistant material Microelectronic Substrate Processing Apparatus. 36. The method of claim 35 wherein A hermetically sealed gate providing an interface between the interior of the main chamber and an environment outside the main chamber, wherein in an open position of the substrate support device, the substrate support surface is accessible from the external environment to the substrate support surface. Are usually aligned with the gate so that Microelectronic Substrate Processing Apparatus. 36. The method of claim 35 wherein A sealing element disposed within the main chamber, wherein in the closed position of the substrate support device, the sealing element provides a fluid sealed boundary between the sub-chamber and the inside of the main chamber. Microelectronic Substrate Processing Apparatus. 42. The method of claim 41 wherein The sealing element is supported by the substrate support device and surrounds the substrate support surface. Microelectronic Substrate Processing Apparatus. 36. The method of claim 35 wherein In the closed position of the substrate support device, the pressure in the sub-chamber exceeds atmospheric pressure and the pressure inside the main chamber is substantially atmospheric pressure. Microelectronic Substrate Processing Apparatus. 36. The method of claim 35 wherein In the closed position of the substrate support device, the pressure in the sub-chamber is above atmospheric pressure and the pressure inside the main chamber is below atmospheric pressure. Microelectronic Substrate Processing Apparatus. 36. The method of claim 35 wherein The main chamber has an end portion provided with a bore opening into the main chamber, the substrate support device can move through the bore, and the substrate processing apparatus is disposed in the bore and is external to the main chamber. And a sealing element for fluidly isolating the interior of the main chamber from Microelectronic Substrate Processing Apparatus. 36. The method of claim 35 wherein An actuator coupled to the substrate support device to move the substrate support device between the open and closed positions. Microelectronic Substrate Processing Apparatus. 36. The method of claim 35 wherein A backstop device mechanically associated with the main chamber wall; Microelectronic Substrate Processing Apparatus. The method of claim 47, The backstop device includes a restraining member that can move between the substrate support device and a structure associated with the main chamber wall. Microelectronic Substrate Processing Apparatus. 49. The method of claim 48 wherein The backstop device includes an actuator and a flexible link mechanism for coupling the actuator to the restraining member. Microelectronic Substrate Processing Apparatus. The method of claim 49, The flexible link mechanism includes a rod Microelectronic Substrate Processing Apparatus. 51. The method of claim 50 wherein The rod has a length of about 10 mm to about 100 mm Microelectronic Substrate Processing Apparatus. 51. The method of claim 50 wherein The rod has a diameter of about 1 mm to about 5 mm Microelectronic Substrate Processing Apparatus. The method of claim 49, The flexible link mechanism includes at least two rods Microelectronic Substrate Processing Apparatus. In the substrate processing apparatus, A movable substrate support structure comprising a substrate support surface and a sealing element, A process chamber delimited by said substrate support surface and a sealing element, A main chamber surrounding the processing chamber, the main chamber surrounding the interior of the main chamber which can be fluidly sealed from the external environment of the main chamber and the processing chamber; Ⓓ includes an actuator coupled to the substrate support surface and adapted to control the processing chamber between an open position and a closed position, In the closed position, the sealing element provides a fluid isolated boundary between the processing chamber and the main chamber, and in the open position the substrate support surface is exposed inside the main chamber. Substrate processing apparatus. A microelectronic substrate processing apparatus that can be adjusted between a substrate processing mode and a substrate access mode, A main chamber having a main chamber wall surrounding its interior, (B) an interfacial component mounted in the main chamber and operable between an open state and a closed state, (iii) in the open state of the interfacial component allowing access to the interior of the main chamber from the external environment of the main chamber, and (ii) ) The interface component, which seals the main chamber from the external environment in the closed state of the interface component, Ⓒ In the main chamber, a boundary capable of moving to a first position corresponding to the substrate processing mode and a second position corresponding to the substrate access mode, wherein (i) the substrate is sealedly separated from the inside of the main chamber in the first position; And at least partially forming a compressible sub-chamber configured to confine, and (ii) at the second position a boundary capable of conveying the substrate in and out relative to the main chamber through an open interface component. Substrate processing apparatus. The method of claim 55, A substrate handling module surrounding an external environment, the interface component interconnecting the main chamber and the substrate handling module; Substrate processing apparatus. The method of claim 56, wherein The substrate handling module has a substrate transfer chamber and a robotic end effector disposed within the substrate transfer chamber, wherein the interfacial component is such that the end effector penetrates the interfacial component from the substrate transfer chamber. To move in and out of Substrate processing apparatus. The method of claim 56, wherein The main chamber and the substrate handling module each substantially surround an atmospheric pressure environment. Substrate processing apparatus. The method of claim 58, A substrate loading device coupled to the substrate handling module; Substrate processing apparatus. The method of claim 56, wherein The main chamber and the substrate handling module each surround a vacuum environment. Substrate processing apparatus. The method of claim 60, A vacuum substrate assembly module hermetically coupled to the substrate handling module. Substrate processing apparatus. In the microelectronic substrate processing method, (I) a main chamber having a main chamber wall surrounding its interior, and (ii) a sub-chamber comprising a sub-chamber wall surrounding its interior and disposed within said main chamber and having a boundary. To provide, Ⓑ introducing the microelectronic substrate into the sub-chamber, Ⓒ fluid isolation of the interior of the sub-chamber from the interior of the main chamber; Ⓓ introducing a processing medium into the sub-chamber such that the processing medium pressurizes the sub-chamber inside above atmospheric pressure and contacts the substrate; Microelectronic substrate processing method. The method of claim 62, The treatment medium is introduced into the sub-chamber through a fluid conduit formed through the main chamber wall. Microelectronic substrate processing method. The method of claim 62, Maintaining the interior of the main chamber below atmospheric pressure while the sub-chamber interior is in fluid isolation from the interior of the main chamber. Microelectronic substrate processing method. The method of claim 62, Fluidly isolating the sub-chamber interior includes moving a boundary of the sub-chamber wall from an open position to a closed position. Microelectronic substrate processing method. 66. The method of claim 65, Transferring the substrate into the main chamber through the sealable interface of the main chamber while the boundary is in the open position; Microelectronic substrate processing method. The method of claim 66, wherein Disposing the substrate on a boundary; Microelectronic substrate processing method. 66. The method of claim 65, Moving the boundary between the open and closed positions using an actuator coupled to the boundary; Microelectronic substrate processing method. The method of claim 62, The boundary of the sub-chamber wall is (i) a substrate support surface movable relative to the sub-chamber inner surface, or (ii) a sub-chamber inner surface movable relative to a substrate support surface disposed inside the sub-chamber, or ( Iii) a substrate support surface and a sub-chamber inner surface, The substrate support surface and the sub-chamber inner surface are movable relative to each other. Microelectronic substrate processing method. The method of claim 62, Maintaining fluid isolation within the sub-chamber by moving a backstop device between the boundary and the structure associated with the main chamber wall. Microelectronic substrate processing method. The method of claim 70, The backstop device is in mechanical contact with the main chamber wall. Microelectronic substrate processing method. The method of claim 71 wherein The backstop device is mechanically associated with the main chamber wall Microelectronic substrate processing method. The method of claim 62, Reducing the pressure inside the main chamber using a vacuum; Microelectronic substrate processing method. The method of claim 62, Cleaning the interior of the main chamber through an exhaust portion in fluid communication with the interior of the main chamber; Microelectronic substrate processing method. The method of claim 62, The treatment medium comprises densified carbon dioxide Microelectronic substrate processing method. 76. The method of claim 75 wherein The densified carbon dioxide includes supercritical fluid phase carbon dioxide Microelectronic substrate processing method. 76. The method of claim 75 wherein The densified carbon dioxide includes liquid carbon dioxide Microelectronic substrate processing method.