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KR200473330Y1 - Power semiconductor module - Google Patents

Power semiconductor module Download PDF

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Publication number
KR200473330Y1
KR200473330Y1 KR2020100003617U KR20100003617U KR200473330Y1 KR 200473330 Y1 KR200473330 Y1 KR 200473330Y1 KR 2020100003617 U KR2020100003617 U KR 2020100003617U KR 20100003617 U KR20100003617 U KR 20100003617U KR 200473330 Y1 KR200473330 Y1 KR 200473330Y1
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circuit board
case
groove
control circuit
connection portion
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KR20110009729U (en
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김태화
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엘에스산전 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

본 고안은 전력용 반도체 모듈에 관한 것이다.
즉, 본 고안의 전력용 반도체 모듈은 홈과, 상기 홈의 바닥면에 형성된 관통홀이 구비된 케이스와; 상기 케이스의 상기 홈의 바닥면에 돌출되는 제 1접속부와; 상기 제 1 접속부에 연결되고 상기 관통홀의 측벽에 노출된 제 2 접속부와; 상기 제 1 접속부에 올려지고, 상기 제 1 접속부와 전기적으로 연결된 제어 회로 기판과; 상기 제 2 접속부에 전기적으로 연결된 전력 회로 기판을 포함하여 구성된다.The present invention relates to a power semiconductor module.
That is, the power semiconductor module of the present invention includes a case having a groove and a through hole formed in a bottom surface of the groove; A first connection portion protruding from a bottom surface of the groove of the case; A second connection portion connected to the first connection portion and exposed at a side wall of the through hole; A control circuit board mounted on the first connection portion and electrically connected to the first connection portion; And a power circuit board electrically connected to the second connection portion.

Description

전력용 반도체 모듈 { Power semiconductor module }BACKGROUND OF THE INVENTION 1. Field of the Invention [0001]

본 고안은 전력용 반도체 모듈에 관한 것으로, 특히 전력 회로부와 제어 회로부가 하나의 패키지 안에 결합되어 있는 전력용 반도체 모듈의 구조 및 제조에 관한 것이다.
The present invention relates to a power semiconductor module, and more particularly, to a structure and manufacture of a power semiconductor module in which a power circuit portion and a control circuit portion are combined in a single package.

전력용 반도체 모듈은 DC-DC 컨버터와 인버터 등의 전력 변환 장치에서 전력 변환을 담당하는 반도체 소자의 하나로서 에너지 절약을 위하여 산업상, 가정용 등 많은 부문에 사용된다.Power semiconductor module is one of the semiconductor devices which are responsible for power conversion in power conversion devices such as DC-DC converter and inverter, and it is used in many fields such as industrial and household for energy saving.

그리고, 인버터 및 서보 드라이브와 같은 전력 전자(power electronics) 산업이 발달함에 따라 고성능 소형화가 이루어지고 있으며 이에 따라 전력용 반도체 모듈 또한 무게가 가볍고, 크기가 소형이며, 비용이 저렴하고, 성능이 우수한 특성을 요구한다.
As the power electronics industries such as inverters and servo drives are developed, high performance and miniaturization are being achieved. Accordingly, the power semiconductor module is also light in weight, small in size, low in cost, excellent in performance .

본 고안은 전력 회로부와 제어 회로부가 하나의 패키지 안에 구성된 전력용 반도체 모듈에 있어 전력 회로부와 제어 회로부를 솔더 없이 결합하여 제조 공정을 단순화시킬 수 있고, 제조 경비를 절감시킬 수 있는 과제를 해결하는 것이다.
The present invention solves the problem that the manufacturing process can be simplified by combining the power circuit portion and the control circuit portion without solder in the power semiconductor module having the power circuit portion and the control circuit portion in one package .

본 고안은, In the present invention,

홈과, 상기 홈의 바닥면에 형성된 관통홀이 구비된 케이스와; A case having a groove and a through hole formed in a bottom surface of the groove;

상기 케이스의 상기 홈의 바닥면에 돌출되는 제 1 접속부와; A first connection portion protruding from a bottom surface of the groove of the case;

상기 제 1 접속부에 연결되고 상기 관통홀의 측벽에 노출된 제 2 접속부와; A second connection portion connected to the first connection portion and exposed at a side wall of the through hole;

상기 제 1 접속부에 올려지고, 상기 제 1 접속부와 전기적으로 연결된 제어 회로 기판과; A control circuit board mounted on the first connection portion and electrically connected to the first connection portion;

상기 제 2 접속부에 전기적으로 연결된 전력 회로 기판과;
상기 제어 회로 기판을 고정시킬 수 있는 기구적인 구조물을 포함하여 구성되며,
상기 기구적인 구조물은,
상기 케이스의 홈 바닥면에 형성된 꺽쇠 구조물이고,
상기 제어 회로 기판에는 상기 꺽쇠 구조물이 삽입되어 고정될 수 있는 홀이 형성되는 전력용 반도체 모듈이 제공된다.
A power circuit board electrically connected to the second connection unit;
And a mechanical structure capable of fixing the control circuit board,
The mechanical structure may include,
A crest structure formed on the bottom surface of the case,
The control semiconductor module is provided with a hole through which the braid structure can be inserted and fixed.

본 고안의 전력용 반도체 모듈은 전력 회로 기판과 제어 회로 기판을 하나의 모듈 내부에 패키징할 수 있는 효과가 있다.The power semiconductor module of the present invention has an effect that the power circuit board and the control circuit board can be packaged in one module.

또, 본 고안의 전력용 반도체 모듈은 전력 회로 기판과 제어 회로 기판을 케이스에 패키징할 때 기구적인 구조물로 고정하고 접속부로 연결함으로써, 솔더가 필요하지 않아 제조 공정을 단순화시킬 수 있고, 제조 경비를 감소시킬 수 있는 효과가 있다.
In the power semiconductor module of the present invention, when the power circuit board and the control circuit board are packaged in a case, they are fixed by a mechanical structure and connected to the connecting portion, so that the solder is not necessary and the manufacturing process can be simplified. There is an effect that can be reduced.

도 1은 본 고안에 따른 전력용 반도체 모듈의 개략적인 단면도
도 2는 본 고안에 따른 전력용 반도체 모듈의 기구적인 구조물의 제 1 실시예를 설명하기 위한 개략적인 일부 단면도
도 3은 도 2의 일부 확대도
도 4는 본 고안에 따른 전력용 반도체 모듈의 기구적인 구조물의 제 2 실시예를 설명하기 위한 개략적인 일부 단면도
도 5는 본 고안에 따른 전력용 반도체 모듈의 기구적인 구조물의 제 3 실시예를 설명하기 위한 개략적인 일부 단면도
도 6은 본 고안에 따른 전력용 반도체 모듈의 기구적인 구조물의 제 4 실시예를 설명하기 위한 개략적인 일부 단면도
도 7은 본 고안에 따른 전력용 반도체 모듈의 기구적인 구조물의 제 5 실시예를 설명하기 위한 개략적인 일부 단면도
도 8은 본 고안에 따른 전력용 반도체 모듈의 기구적인 구조물의 제 6 실시예를 설명하기 위한 개략적인 일부 단면도
도 9는 본 고안에 따른 전력용 반도체 모듈의 기구적인 구조물의 제 7 실시예를 설명하기 위한 개략적인 일부 단면도
도 10은 본 고안에 따른 전력용 반도체 모듈의 기구적인 구조물의 제 7 실시예를 설명하기 위한 개략적인 일부 단면도1 is a schematic cross-sectional view of a power semiconductor module according to the present invention
2 is a schematic partial cross-sectional view for explaining a first embodiment of a mechanical structure of a power semiconductor module according to the present invention
Fig. 3 is a partially enlarged view of Fig. 2
4 is a schematic partial cross-sectional view for explaining a second embodiment of the mechanical structure of the power semiconductor module according to the present invention
5 is a schematic partial cross-sectional view for explaining a third embodiment of the mechanical structure of the power semiconductor module according to the present invention
6 is a schematic partial cross-sectional view for explaining a fourth embodiment of the mechanical structure of the power semiconductor module according to the present invention
7 is a schematic partial cross-sectional view for explaining a fifth embodiment of the mechanical structure of the power semiconductor module according to the present invention
8 is a schematic partial cross-sectional view for explaining a sixth embodiment of the mechanical structure of the power semiconductor module according to the present invention
9 is a schematic partial cross-sectional view for explaining a seventh embodiment of the mechanical structure of the power semiconductor module according to the present invention
10 is a schematic partial cross-sectional view for explaining a seventh embodiment of the mechanical structure of the power semiconductor module according to the present invention

이하, 첨부된 도면을 참조하여 본 고안의 실시예를 설명하면 다음과 같다.Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

도 1은 본 고안에 따른 전력용 반도체 모듈의 개략적인 단면도이고, 도 2는 본 고안에 따른 전력용 반도체 모듈의 기구적인 구조물의 제 1 실시예를 설명하기 위한 개략적인 일부 단면도이다.FIG. 1 is a schematic cross-sectional view of a power semiconductor module according to the present invention, and FIG. 2 is a schematic partial cross-sectional view for explaining a mechanical structure of a power semiconductor module according to a first embodiment of the present invention.

본 고안의 실시예에 따른 전력용 반도체 모듈은 홈(110)과, 상기 홈(110)의 바닥면(111)에 형성된 관통홀(120)이 구비된 케이스(100)와; 상기 케이스(100)의 상기 홈(110)의 바닥면(111)에 돌출되는 제 1 접속부(210)와; 상기 제 1 접속부(210)에 연결되고 상기 관통홀(120)의 측벽(221)에 노출된 제 2 접속부(220)와; 상기 제 1 접속부(210)에 올려지고, 상기 제 1 접속부(210)와 전기적으로 연결된 제어 회로 기판(300)과; 상기 제 2 접속부(220)에 전기적으로 연결된 전력 회로 기판(500)을 포함하여 구성된다.A power semiconductor module according to an embodiment of the present invention includes a case 100 having a groove 110 and a through hole 120 formed in a bottom surface 111 of the groove 110; A first connection part 210 protruding from a bottom surface 111 of the groove 110 of the case 100; A second connection part 220 connected to the first connection part 210 and exposed to the side wall 221 of the through hole 120; A control circuit board (300) mounted on the first connection part (210) and electrically connected to the first connection part (210); And a power circuit board 500 electrically connected to the second connection unit 220.

여기서, 본 고안의 전력용 반도체 모듈에는 상기 제어 회로 기판(300)을 고정시킬 수 있는 기구적인 구조물이 더 구비되어 있는 것이 바람직하다.Here, it is preferable that the power semiconductor module of the present invention further includes a mechanical structure capable of fixing the control circuit board 300.

상기 기구적인 구조물은 상기 홈(110)의 측벽(112)에 형성된 돌출부(130)로 구현할 수 있다.The mechanical structure may be embodied as a protrusion 130 formed in a side wall 112 of the groove 110.

즉, 상기 돌출부(130)는 상기 제 1 접속부(210)에 올려져 접촉되어 있는 제어 회로 기판(300)의 상부에서 상기 제어 회로 기판(300)에 밀착되어 상기 제어 회로 기판(300)이 움직이지 않게 된다.That is, the protrusion 130 is brought into close contact with the control circuit board 300 at an upper portion of the control circuit board 300 which is raised and contacted with the first connection portion 210, so that the control circuit board 300 moves .

그리고, 상기 돌출부(130)는 경사면이 구비되어 있어, 상기 제어 회로 기판(300)을 상기 홈(110) 내부에 삽입시킨 후, 상기 돌출부(130)의 경사면에 도달될 때, 상기 제어 회로 기판(300)을 가압하면 상기 제어 회로 기판(300)이 상기 경사면을 따라 상기 돌출부(130)와 상기 홈(110) 사이 공간으로 밀려 들어가게 된다.When the control circuit board 300 is inserted into the groove 110 and then reaches an inclined surface of the protrusion 130, the control circuit board 300 The control circuit board 300 is pushed into the space between the protrusion 130 and the groove 110 along the inclined surface.

그러므로, 상기 제어 회로 기판(300)은 상기 홈(110)의 바닥면(111)에 돌출되는 제 1 접속부(210)에 접촉되면서 전기적으로 연결되고, 상기 돌출부(130)에 의해 상기 홈(110) 외부로 이탈되지 않는다.The control circuit board 300 is electrically connected to the first connection part 210 protruding from the bottom surface 111 of the groove 110 and electrically connected to the groove 110 by the protrusion 130. [ And is not released to the outside.

이때, 상기 제어 회로 기판(300)은 다수의 칩들이 실장되어 있고, 상기 제 1 접속부(210)와 접촉되는 영역에는 도 3과 같이 금속 패턴 단자(310)가 형성되어 있어, 상기 제 1 접속부(210)와 상기 금속 패턴 단자(310)는 접촉되어 전기적으로 연결되는 것이다.3, a metal pattern terminal 310 is formed in a region where the control circuit board 300 is in contact with the first connection part 210, and the first connection part 210 and the metal pattern terminal 310 are electrically connected to each other.

그리고, 상기 전력 회로 기판(500)도 다수의 칩들이 실장되어 있다.The power circuit board 500 also has a plurality of chips mounted thereon.

여기서, 상기 기구적인 구조물은 상기 케이스(100)와 동일한 물질로 만들어지고, 상기 케이스(100)가 성형될 때 함께 만들어지는 것이 바람직하다.Here, it is preferable that the mechanical structure is made of the same material as the case 100, and the case 100 is formed together when the case 100 is molded.

그리고, 상기 제 1과 2 접속부(210,220)는 일체로된 금속 구조물로 형성될 수 있다.In addition, the first and second connection portions 210 and 220 may be formed of an integral metal structure.

또, 상기 전력 회로 기판(500)에는 전극 패드가 형성되어 있고, 상기 전극 패드는 상기 제 2 접속부(220)와 솔더로 연결되어 있는 것이 바람직하다.In addition, it is preferable that an electrode pad is formed on the power circuit board 500, and the electrode pad is connected to the second connection part 220 by solder.

또한, 상기 전력 회로 기판(500)은 소정의 지지부(550)에 실장되어 있고, 상기 지지부(550)는 상기 케이스(100)의 관통홀(120)을 폐색시키며, 상기 케이스(100) 하부에 본딩되어 구성될 수 있다.The power circuit board 500 is mounted on a predetermined support portion 550. The support portion 550 closes the through hole 120 of the case 100 and is bonded to the lower portion of the case 100. [ .

여기서, 상기 지지부(550)는 히트 싱크로 구성할 수 있다.Here, the support unit 550 may be configured as a heat sink.

따라서, 본 고안의 전력용 반도체 모듈은 전력 회로 기판과 제어 회로 기판을 하나의 모듈 내부에 패키징할 수 있는 장점이 있다.Therefore, the power semiconductor module of the present invention has an advantage that the power circuit board and the control circuit board can be packaged in one module.

또한, 본 고안의 전력용 반도체 모듈은 전력 회로 기판과 제어 회로 기판을 케이스에 패키징할 때 기구적인 구조물로 고정하고 접속부로 연결함으로써, 솔더가 필요하지 않아 제조 공정을 단순화시킬 수 있고, 제조 경비를 감소시킬 수 있는 장점이 있다.
In addition, the power semiconductor module of the present invention can simplify the manufacturing process because the solder is not needed by fixing the power circuit board and the control circuit board to the case when they are fixed as a mechanical structure and connected to the connection portion, There is an advantage that it can be reduced.

도 4는 본 고안에 따른 전력용 반도체 모듈의 기구적인 구조물의 제 2 실시예를 설명하기 위한 개략적인 일부 단면도이다.4 is a schematic partial cross-sectional view for explaining a second embodiment of the mechanical structure of the power semiconductor module according to the present invention.

전술된 기구적인 구조물은 케이스(100)에 고정된 탄성력이 있는 금속 구조물(131)로 구현할 수 있다.The mechanical structure described above can be implemented as a resilient metal structure 131 fixed to the case 100.

즉, 도 4에 도시된 바와 같이, 상기 금속 구조물(131)은 제어 회로 기판(300)이 상기 케이스(100)의 홈(110)에 결합될 때, 상기 홈(110)의 측벽(112) 방향으로 변형되었다가 상기 제어 회로 기판(300)의 결합이 완료된 후, 원래의 상태로 복원되어 상기 제어 회로 기판(300)이 외부로 빠져나가지 않도록 고정한다.4, when the control circuit board 300 is coupled to the groove 110 of the case 100, the metal structure 131 may be bent in the direction of the side wall 112 of the groove 110 And after the connection of the control circuit board 300 is completed, the control circuit board 300 is restored to its original state and fixed so that the control circuit board 300 does not escape to the outside.

그리고, 상기 금속 구조물(131)도 경사진 형상으로 상기 케이스(100)의 홈(110)의 측벽(112)에 고정되어 있다.The metal structure 131 is also fixed to the side wall 112 of the groove 110 of the case 100 in an inclined shape.

도 5는 본 고안에 따른 전력용 반도체 모듈의 기구적인 구조물의 제 3 실시예를 설명하기 위한 개략적인 일부 단면도이다.5 is a schematic partial cross-sectional view for explaining a third embodiment of the mechanical structure of the power semiconductor module according to the present invention.

전술된 기구적인 구조물은 케이스(100)의 홈(110) 바닥면(111)에 형성된 꺽쇠 구조물(132)로 구현될 수 있다.The above-described mechanical structure can be realized by a crest structure 132 formed on the bottom surface 111 of the groove 110 of the case 100.

그리고, 제어 회로 기판(300)에는 상기 꺽쇠 구조물(132)이 삽입되어 고정될 수 있는 홀(310)이 형성되어 있다.The control circuit board 300 is formed with a hole 310 through which the clamping structure 132 can be inserted and fixed.

그러므로, 상기 제어 회로 기판(300)이 상기 케이스(100)의 홈(110)에 결합될 때, 상기 꺽쇠 구조물(132)이 상기 제어 회로 기판(300)의 홀(310)에 삽입될 때, 변형되었다가 상기 제어 회로 기판(300)과 상기 케이스(100)의 결합이 완료되면 원래의 상태로 복원되어 상기 제어 회로 기판(300)이 외부로 빠져나가지 않도록 고정하는 것이다.When the clamping structure 132 is inserted into the hole 310 of the control circuit board 300 when the control circuit board 300 is coupled to the groove 110 of the case 100, When the coupling between the control circuit board 300 and the case 100 is completed, the control circuit board 300 is restored to its original state and fixed so that the control circuit board 300 does not escape to the outside.

여기서, 상기 꺽쇠 구조물(132)은 상기 케이스(100)와 동일한 재질로 형성될 수 있다.Here, the braid structure 132 may be formed of the same material as the case 100.

또, 상기 꺽쇠 구조물(132)은 도 6에 도시된 바와 같이, 탄성을 갖는 꺽쇠 형상의 금속 구조물(133)로 변형이 가능하다.
In addition, as shown in FIG. 6, the clamping structure 132 can be deformed into a cantilevered metal structure 133 having elasticity.

도 7은 본 고안에 따른 전력용 반도체 모듈의 기구적인 구조물의 제 5 실시예를 설명하기 위한 개략적인 일부 단면도이다.7 is a schematic partial cross-sectional view for explaining a fifth embodiment of the mechanical structure of the power semiconductor module according to the present invention.

본 고안에 적용된 기구적인 구조물로 케이스(100)의 홈(110) 측벽(111)에 형성된 돌출부(130)와 케이스(100)의 홈(110) 바닥면(111)에 형성된 꺽쇠 구조물(132)을 함께 적용할 수 있고, 제어 회로 기판(300)에는 상기 꺽쇠 구조물(132)이 삽입되어 고정될 수 있는 홀(310)이 형성되어 있다.A protruding portion 130 formed on the side wall 111 of the groove 110 of the case 100 and a crest structure 132 formed on the bottom surface 111 of the groove 110 of the case 100, And a hole 310 is formed in the control circuit board 300 so that the clamping structure 132 can be inserted and fixed.

그리고, 도 8에 도시된 바와 같이, 상기 기구적인 구조물로 케이스(100)의 홈(110) 측벽(111)에 형성된 돌출부(130)와 케이스(100)의 홈(110) 바닥면(111)에 형성된 탄성을 갖는 꺽쇠 형상의 금속 구조물(133)을 적용할 수도 있다.8, the protrusion 130 formed on the side wall 111 of the groove 110 of the case 100 and the protrusion 130 formed on the bottom surface 111 of the groove 110 of the case 100, It is also possible to apply the metal structure 133 having the formed elasticity.

또, 도 9와 같이, 상기 기구적인 구조물은 케이스(100)의 홈(110)의 측벽(112)에 고정된 탄성력이 있는 금속 구조물(131)과 케이스(100)의 홈(110) 바닥면(111)에 형성된 탄성을 갖는 꺽쇠 형상의 금속 구조물(133)을 함께 적용할 수도 있다.9, the mechanical structure includes a resilient metal structure 131 fixed to the side wall 112 of the groove 110 of the case 100 and a bottom surface 110 of the groove 110 of the case 100 The metal structure 133 having the elasticity formed in the metal member 111 may be applied together.

게다가, 도 10에 도시된 바와 같이, 상기 기구적인 구조물은 케이스(100)의 홈(110)의 측벽(112)에 고정된 탄성력이 있는 금속 구조물(131)과 상기 케이스(100)의 홈(110) 바닥면(111)에 형성된 꺽쇠 구조물(132)로 구현할 수 있다.
10, the mechanical structure may include a resilient metal structure 131 fixed to the side wall 112 of the groove 110 of the case 100 and a groove 110 (see FIG. 10) of the case 100. In addition, And a crest structure 132 formed on the bottom surface 111.

본 고안은 구체적인 예에 대해서만 상세히 설명되었지만 본 고안의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (12)

홈과, 상기 홈의 바닥면에 형성된 관통홀이 구비된 케이스와;
상기 케이스의 상기 홈의 바닥면에 돌출되는 제 1 접속부와;
상기 제 1 접속부에 연결되고 상기 관통홀의 측벽에 노출된 제 2 접속부와;
상기 제 1 접속부에 올려지고, 상기 제 1 접속부와 전기적으로 연결된 제어 회로 기판과;
상기 제 2 접속부에 전기적으로 연결된 전력 회로 기판과;
상기 제어 회로 기판을 고정시킬 수 있는 기구적인 구조물을 포함하여 구성되며,
상기 기구적인 구조물은,
상기 케이스의 홈 바닥면에 형성된 꺽쇠 구조물이고,
상기 제어 회로 기판에는 상기 꺽쇠 구조물이 삽입되어 고정될 수 있는 홀이 형성되는 전력용 반도체 모듈.
A case having a groove and a through hole formed in a bottom surface of the groove;
A first connection portion protruding from a bottom surface of the groove of the case;
A second connection portion connected to the first connection portion and exposed at a side wall of the through hole;
A control circuit board mounted on the first connection portion and electrically connected to the first connection portion;
A power circuit board electrically connected to the second connection unit;
And a mechanical structure capable of fixing the control circuit board,
The mechanical structure may include,
A crest structure formed on the bottom surface of the case,
Wherein the control circuit board has a hole through which the bracket can be inserted and fixed.
청구항 1에 있어서,
상기 전력 회로 기판에는 전극 패드가 형성되어 있고, 상기 전극 패드는 상기 제 2 접속부와 솔더로 연결되어 있는 것을 특징으로 하는 전력용 반도체 모듈.
The method according to claim 1,
Wherein an electrode pad is formed on the power circuit board, and the electrode pad is connected to the second connection part by solder.
청구항 1에 있어서,
상기 제 1 접속부와 접촉되는 상기 제어 회로 기판 영역에는 금속 패턴 단자가 형성되어 있는 것을 특징으로 하는 전력용 반도체 모듈.
The method according to claim 1,
And a metal pattern terminal is formed in the control circuit board region that is in contact with the first connecting portion.
삭제delete 청구항 1에 있어서,
상기 기구적인 구조물은,
상기 홈의 측벽에 형성된 돌출부를 더 포함하는 것을 특징으로 하는 전력용 반도체 모듈.
The method according to claim 1,
The mechanical structure may include,
And a protrusion formed on a side wall of the groove.
청구항 5에 있어서,
상기 돌출부는,
경사면이 구비되어 있는 것을 특징으로 하는 전력용 반도체 모듈.
The method of claim 5,
The projection
And a sloped surface is provided on the surface of the semiconductor substrate.
삭제delete 청구항 1에 있어서,
상기 꺽쇠 구조물은,
탄성을 갖는 꺽쇠 형상의 금속 구조물인 것을 특징으로 하는 전력용 반도체 모듈.
The method according to claim 1,
The cramp structure includes:
Wherein the metal structure is a cantilever-shaped metal structure having elasticity.
삭제delete 청구항 1에 있어서,
상기 꺽쇠 구조물은,
상기 케이스와 동일 재질인 것을 특징으로 하는 전력용 반도체 모듈.
The method according to claim 1,
The cramp structure includes:
Wherein the case is made of the same material as the case.
삭제delete 청구항 5에 있어서,
상기 돌출부는,
탄성력이 있는 금속 구조물인 것을 특징으로 하는 전력용 반도체 모듈.
The method of claim 5,
The projection
Wherein the power semiconductor module is a metal structure having elasticity.
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JPH10229261A (en) * 1997-02-13 1998-08-25 Sansha Electric Mfg Co Ltd Power semiconductor device
JP2000307056A (en) * 1999-04-22 2000-11-02 Mitsubishi Electric Corp Vehicle-mounted semiconductor device
JP2006121861A (en) * 2004-10-25 2006-05-11 Fuji Electric Fa Components & Systems Co Ltd Power converter

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Publication number Priority date Publication date Assignee Title
JPH10229261A (en) * 1997-02-13 1998-08-25 Sansha Electric Mfg Co Ltd Power semiconductor device
JP2000307056A (en) * 1999-04-22 2000-11-02 Mitsubishi Electric Corp Vehicle-mounted semiconductor device
JP2006121861A (en) * 2004-10-25 2006-05-11 Fuji Electric Fa Components & Systems Co Ltd Power converter

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