KR200422948Y1 - Ground Shield for PCB Chambers - Google Patents

Abstract

An apparatus is provided for processing a substrate in a physical vapor deposition chamber. In one embodiment, an apparatus for processing a substrate in a physical vapor deposition chamber having a target and ground chamber walls arranged in a lid assembly includes a ground frame and a ground shield. The ground frame is insulatedly connected to the lead assembly and has a conductive bottom surface. The ground shield has a conductive wall electrically connected to the conductive bottom surface of the ground frame. The ground shield is configured to enclose the target and is configured to provide a gap between the peripheral edge and the upper edge of the target during installation.

Description

Ground Shield for PCB Chambers {GROUND SHIELD FOR A PVD CHAMBER}

1A is a simplified cross sectional view of a PVD chamber with a ground shield of the present invention.

FIG. 1B is a detailed view schematically showing the interface between the ground shield, the target, and the chamber body of the PVD chamber. FIG.

2 is a cross-sectional view showing another embodiment of a ground shield.

3 is a bottom view of the ground shield of FIG. 2.

Explanation of symbols on the main parts of the drawings

The present invention generally relates to substrate processing systems. In particular, the present invention relates to a physical vapor deposition chamber of a substrate processing system.

Physical vapor deposition (PVD), or sputtering, is one of the most commonly used processes in the assembly of electronic devices. PVD is a plasma process performed in a vacuum chamber in which a negatively biased target is exposed to a plasma of an inert gas having a significantly heavy atom (eg argon) or a gas mixture of such inert gases. Collision with a target by ions of an inert gas results in the release of atoms of the target material. The released atoms accumulate as deposition films on a substrate placed on a substrate support arranged in a vacuum chamber.

Ground shields are arranged in the vacuum chamber to help form processing regions for the substrate in certain areas within the vacuum chamber. Ground shields help to confine (limit) the plasma within the treatment area. Confining the plasma and released atoms to the treatment region allows for a high percentage of emitted atoms to be deposited on the substrate, thus keeping other components in the chamber free of deposition and promoting more efficient use of the target material. do.

The ground shield is electrically connected to the vacuum chamber wall and electrically insulated from the target. As such, the ground shield is typically attached to the wall or body of the vacuum chamber. In addition, a small gap is maintained between the ground shield and the target, which prevents plasma from forming outside of the treatment area. However, it is difficult to align the ground shield with the target, which results in high set-up time and maintenance costs for proper operation of the device. This makes it difficult to use large targets required for processing large substrates. For example, the substrate used for the manufacture of flat panel displays has grown to about 15,000 cm 2 or more. It is also expected that much larger substrates will be used in the future.

It is therefore an object of the present invention to provide an improved ground shield for PVD chambers, which is required in the art.

Thereafter, an apparatus for processing a substrate in a physical vapor deposition chamber is provided. In one embodiment, an apparatus for processing a substrate in a physical vapor deposition chamber having a target arranged inside the lid assembly and a grounded chamber wall includes a ground frame and a ground shield. The ground frame is insulatedly connected to the lead assembly and has a conductive bottom surface. The ground shield has a conductive wall that is adjustably electrically connected to the conductive bottom surface of the ground frame. The ground shield is configured to enclose the target and has an upper edge configured to provide a gap between the peripheral edge and the upper edge of the target during installation.

In another embodiment, the substrate processing apparatus includes a chamber having a body and a lid assembly. The target is connected to the lid assembly. The ground frame is connected to the lead assembly and is electrically insulated from the target. The ground frame has an electrical connection with the body. The conductive ground shield is adjustably electrically connected to the ground frame. The ground shield surrounds the target.

In another aspect of the present invention, a substrate processing method has a step of controllably connecting a ground shield to a lid assembly of a processing chamber and closing the lid assembly while the lid assembly is open. The substrate is placed inside the chamber and a plasma is formed inside the chamber. The ground shield can be adjusted relative to the target to form a gap between the edge of the ground shield and the opposite protruding edge of the target. The ground shield further includes a plurality of segments, each of which can be individually adjusted relative to the target to form a gap.

BRIEF DESCRIPTION OF THE DRAWINGS Some embodiments will be described in greater detail with reference to the embodiments shown in the accompanying drawings, in order to allow the above-described features of the present invention to be understood in more detail. However, it is to be understood that the accompanying drawings are merely illustrative of common embodiments of the present invention, and therefore are not to be construed as limiting the scope of the present invention, and that there may be embodiments having other equivalent effects.

In order to facilitate understanding, the same reference numerals are used as much as possible for the same components that are common in the drawings.

The present invention provides an improved ground shield that can be easily connected and easily aligned with a target for a PVD chamber. The ground shield is insulated from the target and connected to ground when installed in the PVD chamber. The ground shield is easily aligned with the target while the lid is removed from the chamber, thereby reducing set-up time and cost. Improved alignment between the ground shield and the target further improves the uniformity and control of the PVD process. PVD chambers with targets of any size may be favored by the ground shield of the present invention, but PVD chambers with large targets may be particularly advantageous because a small and uniform gap must be maintained with respect to the ground shield by target increments.

1A shows a processing chamber 100 including a ground shield assembly 111 in accordance with one embodiment of the present invention. One example of a processing chamber 100 having the advantages of the present invention is a PVD processing chamber commercialized from AKT, Inc., Santa Clara, California.

Exemplary processing chamber 100 includes chamber body 102 and lid assembly 106 forming an evacuable processing space 160. Chamber body 102 is typically assembled from a welded stainless steel plate or an aluminum single block. Chamber body 102 generally includes sidewall 152 and bottom 154. Sidewall 152 and / or bottom 154 generally include a plurality of holes including access port 156 and pumping port (not shown). Other holes, such as shutter disk ports (not shown), may optionally be formed in the sidewalls 152 and bottom 154 of the chamber body 102. Sealable access port 156 allows entry into and exit from processing chamber 100. The pumping port is connected to a pumping system (not shown) that exhausts and controls the pressure inside the processing space 160.

The substrate support 104 is generally arranged at the bottom 154 of the chamber body 102 and supports the substrate 112 over the support during the processing process. The substrate support 104 is typically made of aluminum, stainless steel, ceramic, or a combination thereof. The shaft 187 extends through the bottom 154 of the chamber 102 and connects the substrate support 104 to the lift mechanism 188. The lift mechanism 188 is configured to move the substrate support 104 between a lower position and an upper position. The substrate support 104 is shown in an intermediate position in FIG. 1A. The bellows 186 is typically arranged between the substrate support 104 and the chamber bottom 154 and provides a flexible seal therebetween to maintain the vacuum of the chamber space 160.

Optionally, bracket 162 and shadow frame 158 can be arranged in chamber body 102. The bracket 162 may be connected to the wall 152 of the chamber body 102, for example. The shadow frame 158 is generally configured to be deposited only on the portion of the substrate 112 that is exposed through the center of the shadow frame 158. As the substrate support 104 moves to an upper position for processing, the outer edge of the substrate arranged on the substrate support 104 engages the shadow frame 158 and lifts the shadow frame 158 out of the bracket 162. Let's do it. Alternatively, shadow frames with other configurations may optionally be used as well.

The substrate support 104 is moved to a lower position for loading and unloading the substrate from the substrate support 104. In such lower position, the substrate support 104 is located below the shield 162 and the port 156. Substrate 112 may be placed inside or removed from chamber 100 through port 156 in sidewall 152 during cleaning of shadow frame 158 and shield 162. Lift pins (not shown) are provided from the substrate support 104 to facilitate positioning or removal of the substrate 112 by wafer transfer mechanisms arranged outside the processing chamber, such as a single blade robot (not shown). It is selectively moved through the substrate support 104 to space 112.

Lead assembly 106 generally includes a target 164 and a ground shield assembly 111 that is directly connected to the target. Target 164 provides a material that is deposited on substrate 112 during a PVD process. The target generally includes a peripheral portion 163 and a central portion 165. Periphery 163 is arranged over wall 162 of the chamber. The central portion 165 of the target 164 may protrude or extend toward the substrate support 104. It should be considered that other target configurations may be used as well. For example, the target may include a back plate having a center portion of a predetermined material bonded or attached to the target. The target material may also include tiles or segments of a material from which the target can be formed together. Optionally, the lid assembly 106 may also include a magnetron 166 that enhances the consumption of the target material during the processing process.

The target 164 and the substrate support 104 are polarized opposite to each other by the power source 184. Gas, such as argon, is typically supplied from the gas source 182 to the processing space 160 through one or more holes (not shown) formed in the wall 152 of the processing chamber 100. The plasma is formed from the gas between the substrate 112 and the target 164. Ions in the plasma are accelerated toward the target 164 to allow the deposition material to escape from the target 164. The dislodged material is pulled towards the substrate 112 to form a film over the substrate.

Ground shield assembly 111 includes a ground frame 108 and a ground shield 110. The ground shield surrounds the central portion 165 of the target 164 to form a treatment region within the processing space 160 and is connected to the periphery of the target 164 by the ground frame 108. Ground frame 108 provides a ground passage to body 102 of chamber 100 (typically through sidewall 152) while electrically insulating ground shield 110 from target 164. One benefit of attaching the ground shield 110 to the lid assembly 106 is that the ground shield 110 and the target 164 are much better before placing the lid assembly 106 on the chamber body 102. It can be easily and accurately aligned, reducing the time required to align the ground shield 110 with the target 164. In addition, once the ground shield 110 is attached to the lid assembly 106, the lid assembly 106 can complete the set-up simply by placing it on the chamber wall 156. Thus, the need for alignment of the target with the ground shield after installation, which was required for a conventional chamber with an adjustable target / ground shield arrangement, is eliminated. It also eliminates the need for expensive precision positioning pins and / or components required for conventional chambers that did not have an adjustable target / ground shield arrangement.

The ground shield 110 confines the plasma inside the area surrounded by the ground shield 110 so that the target materials can only gather into the central portion 165 of the target 164. Ground shield 110 also allows dislodged target materials to be deposited primarily on substrate 112. This not only maximizes the effective use of the target material but also prevents other areas of the chamber body 102 from being deposited or eroded into the escaped target material or protects other areas of the chamber body from plasma, thereby improving chamber life and Reduce downtime and costs for cleaning or other maintenance. Another benefit derived from this feature of the present invention is due to separation from the chamber body 102 (eg, due to exfoliation of the deposited film or erosion by the plasma of the chamber body 102) and to the surface of the substrate 112. By reducing the deposited particles, the quality and yield can be improved.

FIG. 1B illustrates in detail the interface between ground frame 108 and ground shield 110, target 164, and chamber body 152 of ground shield assembly 111. Target frame 108 is generally coupled to target 164. Alternatively, ground frame 108 may be connected to a back plate (not shown) or other component of lead assembly 106 if ground shield 110 is long enough to be positioned and adjusted relative to target 164 as needed. have. Ground frame 108 generally insulates ground shield 110 from target 164. In one embodiment, the ground frame 108 has an insulating interface 122 with the target 164.

Ground frame 108 also provides conductive passage 124 from ground shield 110 to chamber body 102. In one embodiment, the ground frame 108 has a conductive passage 124 into the sidewall 152 of the body 102. The conductive passage 124 may include conductive wires, leads, straps, and the like connected between the ground shield 110 and the body 102. Alternatively, the ground frame 108 may have a lower portion made of a suitable conductive material to provide a conductive passage 124 between the ground shield 110 and the body 102.

The ground shield 110 is connected to the ground frame 108 in a suitable manner to maintain and adjust the gap between the center portion 165 of the target 164 and the ground shield 110. For example, ground shield 110 may be connected to ground frame 108 by screws, bolts, clamps, and the like. The ground shield 110 may further include an oversized hole, slot, or similar component formed therein to facilitate adjustment of the gap 120. It should be understood that other mechanisms for adjusting and aligning the gap 120 between the central portion 165 of the target 164 and the ground shield 110 may also be used.

The gap 120 is generally uniform in depth and length. That is, the opposite surface of the target 164 forming the gap and the ground shield 110 are generally parallel. As such, the upper edge of the ground shield 110 is generally formed parallel to the mating surface of the protruding edge of the central portion 165 of the target 164. The angle between the target 164 and each edge of the ground shield 110 shown in FIGS. 1A (vertical or 90 degrees) and 1B (about 45 degrees) is for illustrative purposes only and other suitable angles may be used as well. It should be noted that. In addition, the ground shield 110 may have a means for good control of the width of the gap 120 along its length. Preferred said width adjusting means may comprise adjusting screws, cams, wedges, spacers and the like. Alternatively, or in combination with them, the ground shield 110 can include multiple sections that can be independently adjusted relative to the target 164, as described below. The gap 120 is generally wide enough to prevent arcing between the target 164 and the ground shield 110, and provides a dark space between the target 164 and the ground shield 110. It may have any width that is narrow enough to maintain, i.e., prevent the glow discharge of the plasma traveling towards the gap 120.

2 is a cross-sectional view illustrating one embodiment of a ground shield 110 and a ground frame 108 of the ground shield assembly 11. Ground shield 110 may be assembled from any conductive material having suitable mechanical and electrical properties, vacuum characteristics, and suitable for the manufacturing process. For example, ground shield 110 may be assembled from a conductive material such as stainless steel, aluminum, or the like. Alternatively, ground shield 110 may be comprised of a nonconductive material coated with a conductive material as described above.

In one embodiment, the ground shield 110 is secured in such a manner as to maintain a small gap 210 between the protruding edge 208 of the central portion 165 of the target 164 and the upper edge 206 of the wall 202. Wall 202 to be included. The upper edge 206 of the wall 202 is formed or maintained such that the gap 210 is substantially uniform and parallel between the protruding edge 208 of the target 164 and the edge 206 of the wall 202. The angle of the upper edge 206 shown in FIG. 2 is merely exemplary. The angle of the upper edge may be used as long as it is substantially parallel to the protruding edge 208 of the target 164.

The wall 202 may vary in length and should be at least long enough to be in line with the central portion 165 of the target 164. In embodiments in which the wall 202 extends beyond the central portion 165 of the target 164, the wall 202 may remain substantially perpendicular to the target 164 or target 164 angle. For example, in the embodiment shown in FIG. 2, the wall 202 remains substantially perpendicular to the target 164. Alternatively, wall 202 may be spaced from or angled toward the center of chamber 100.

Ground shield 110 is held in place with respect to target 164 by ground frame 108. Ground shield 110 may be connected to ground frame 108 in any suitable manner. In one embodiment, the flange 204 extends from the wall 202 of the ground shield 110. The flange 204 has a through hole 205 formed to facilitate connection with the ground frame 108 by screws 222. To facilitate the gap 210, the hole 205 may be formed with a slot to allow alignment of the ground shield 110 with respect to the target 164 prior to tightening with the screw 222. It is to be understood that other mechanisms for alignment and adjustment may be used other than or in combination with the foregoing description. For example, set screws, adjustment bolts, cams, wedges, spacers, and the like can be used alone or in combination to provide proper alignment and adjustment of the gap 210.

Also, unlike or in combination with the other embodiments described above, the ground shield 110 is formed along the perimeter of the boundary 210 between the edge 206 of the target and the upper edge 206 of the ground shield 110. It may further comprise multi-segments, modules, or pieces to facilitate local alignment of the. This has the advantage of facilitating installation by compensating for tolerances and inaccuracies in the lead assembly components.

For example, FIG. 3 is a bottom view of the ground shield 110 of FIG. 2 attached to the lid assembly 106. In the embodiment shown in FIG. 3, the ground shield 110 includes a plurality of sections 302 arranged to surround the target 164. Each section 302 is connected to the conductive frame 212 by screws 222. The plurality of sections 302 allows the gap 210 to be maintained locally (ie, to be maintained in an area adjacent to a particular section 302 of the ground frame 110).

The sections 302 may abut one another, or alternatively, there may be a small gap 304 between each section 306. The gap 304 should be narrow enough to prevent the glow discharge of the plasma from entering the gap 304. Gap 304 provides independent angle adjustment for each section 202 to more precisely maintain gap 210 between protruding edge 208 of target 164 and wall 202 of each section. Make it possible. The sides of each section 302 are straight or angled. For example, the side 306 of the wall 202 is straight, ie aligned with the side 310 of the flange 204 or substantially perpendicular to the front 312 of the wall 202. Alternatively, the side 308 of the wall is angled. That is, the side of the wall is not aligned (not parallel) with the side of the flange 204 or is perpendicular to the front face 312 of the wall 202. The angle of the side 308 may be any angle as long as it can be straight through the gap 304. For example, the side 308 may not be perpendicular to the front 312 of the wall 202. Side 310 of flange 204 may not be perpendicular to front 312 of wall 202. For example, side 308 and side 310 may be formed at the same angle. In the embodiment shown in FIG. 3, the angle of the edge 308 is about 45 degrees.

Each section 302 has a width W that may be preferably selected for a particular application. For example, the width W of the section 302 may be greater if only a few components are needed or if the tolerances of the target and section 302 are more precisely known. Alternatively, the width W may be less if more sections 302 are needed. Also, the width W may be selected based on the size of the target 164. For example, the width W of the section 302 may be balanced against the overall number of sections depending on the size of the target 164 with a predetermined degree of alignment controlled by the width W of the section 302. Can be selected.

Section 302 also allows the ground frame 110 to be part of a modular system that can be used as a target of various sizes, thereby reducing the number and cost of components needed to operate a chamber having targets of various sizes. . It should be understood that not all sections 302 need to have the same width (W). For example, specific sections may be formed for corner regions of angled targets, or sections with various widths may be used to obtain greater variety in the arrangement of sections 302 or for use with multi-targets of different sizes. .

Although a number of embodiments are shown with respect to a rectangular target, ground shield 110 and section 302 may be adapted to the shape of the target to be used and describe any desired shape, eg, required to maintain a small gap around the periphery of the selected target. For example, it should be understood that the shape may be a polygon or a curve.

Referring to FIG. 2, in one embodiment the ground frame 108 includes a conductive frame 212 and an insulating plate 214 to insulate the ground shield 212 from the target 164 while the grounded chamber wall 152 And a ground passage between the ground shield 110). Conductive frame 212 may be connected directly to ground shield 110 by, for example, screws 222. Conductive portions of ground frame 108, such as conductive frame 212, may be assembled from the same material as ground shield 110.

The insulating plate 214 is arranged between the conductive frame 212 and the target 164 of the lead assembly 106. The insulating plate 214 is made of a conductive material and serves to electrically separate the conductive frame 212 from the target 164. The insulating plate 214 is held in place by any suitable means that can be matched to the processing process. In the embodiment shown in FIG. 2, the insulating plate 214 is fastened to the conductive frame 212 by a plurality of screws (only one screw 220 is shown). The insulating plate 214 is made of a material suitable for a process having suitable mechanical and electrical and vacuum characteristics. For example, the insulating plate 214 may be made of polyether ether ketone (PEEK), polyvinyl chloride (PVC), polytetrafluoroethylene (PTFE), glass reinforced plastic (e.g. G10), acetal homopolymer (DELRIN ( Trademarks) and the like.

Ground frame 108 is configured to support ground shield 110 in place and is secured to target 164 in any suitable manner. In the embodiment shown in FIG. 2, screws 218 are used to fasten the ground frame 108 to the target 164. Insulating collar 216 may be used in embodiments in which screw 218 is formed of a conductive material to electrically insulate target 164 from conductive frame 212. The insulating collar 216 may be made of the same material as the insulating plate 214. In the embodiment shown in FIGS. 2 and 3, the ground frame 108 is an assembly surrounding the target. However, it should be understood that the ground frame 108, once installed, may have other configurations suitable to securely hold the ground shield 110 in place relative to the target 164.

A lead assembly 106 having a ground frame 108 and a ground shield 110 attached thereto is arranged on the wall 152 of the chamber 102. Direct contact between the conductive frame 212 and the ground chamber wall 152 provides an electrical ground passage for the ground shield 110. Ground frame 108 may simply be placed on wall 152 of chamber 102. Alternatively, it may be used to secure a plurality of fastener lead assemblies 106, such as bolts, clamps, and the like, to the chamber wall 152. Optionally, one or more positioning pins or other mechanisms may be used to facilitate alignment and maintenance of the lid assembly 106 relative to the wall 152 of the chamber 102.

The interface between the frame 108 and the wall 152 must be tight enough to maintain a vacuum in the treatment space 160 during the treatment process. Optionally, a seal must be arranged between the wall 152 and the conductive frame 212 such that no air leakage occurs along the interface between the wall 152 and the conductive frame 212. The seal may comprise a gasket, an O-ring, or other suitable mechanism known in the art. In the embodiment shown in FIG. 2, a seal 234 is arranged between the wall 152 and the conductive frame 212 to form a seal therebetween. In addition, the seal is optionally provided to reduce leakage between the outer atmosphere of the processing chamber 100 and the processing space 160 (shown in FIG. 1) along the interface between the lid assembly 106 and the ground frame 108. Can be used. In one embodiment, the seal 228 is arranged between the ground frame 108 and the target 164. Seal 228 is selectively in place by non-conductive retainer 226 fixed to conductive frame 212 by suitable means such as a plurality of screws (only one screw 224 is shown in FIG. 2). Can be maintained. The retainer 226 may be made of the same material as the insulating plate 214. Alternatively, in the grooves formed along the interface between the insulating plate 214 and the target 164 and between the insulating plate 214 and the ground frame 212, the seals may be arranged without the need for the retainer 226, respectively. .

Referring to FIG. 1A, a controller 190 is typically interfaced with the processing chamber 100 to control the processing chamber. Controller 190 typically includes a central processing unit (CPU), support circuitry 196 and memory 192. CPU 194 is one of the types of computer processors that can be used in industrial settings for controlling various chambers and sub-processors. The memory 192 is connected to the CPU 194. The memory 192, or computer readable medium, may be one or more of readily available memory, such as RAM, read only memory (ROM), floppy disk, hard disk, or other form of digital storage. The support circuit 196 is connected to the CPU 194 to support the processor in a conventional manner. These circuits include caches, power supplies, clock circuits, input / output circuits, subsystems, and the like. The controller 190 can be used to control the operation of the processing chamber 100, including any deposition process performed within the processing chamber.

Such an improved ground shield is provided. The ground shield is connected directly to the lid assembly, which has the advantage of promoting accurate alignment of the target and ground shield. In addition, the gap is set prior to placing the lid assembly on the chamber, thus eliminating the need to adjust the gap between the ground shield and the target after the lid is installed. In addition, the ground shield may include segments that allow more precise alignment of the gap along the perimeter of the target. It also eliminates the need for expensive precision machined positioning pins and / or components that were needed in conventional chambers without adjustable target / ground shield devices.

While the description so far relates to embodiments of the present invention, there may be other embodiments of the present invention without departing from the basic scope thereof, and the scope of the present invention is determined by the following claims.

Claims (21)

A processing apparatus for a substrate arranged in a physical vapor deposition chamber having a target and ground chamber wall arranged in a lid assembly, the apparatus comprising: A body providing at least a portion of the conductive passageway to the chamber, The body, A wall in which a rectangular hole is formed, and A flange having a plurality of mounting holes extending outwardly from the wall and formed therethrough; Apparatus for processing a substrate arranged in a physical vapor deposition chamber. The method of claim 1, The wall further comprises an upper enlargement, Apparatus for processing a substrate arranged in a physical vapor deposition chamber. The method of claim 1, The body comprises one or more conductive materials or conductive coatings, Apparatus for processing a substrate arranged in a physical vapor deposition chamber. The method of claim 1, The body comprises one or more stainless steel or aluminum, Apparatus for processing a substrate arranged in a physical vapor deposition chamber. The method of claim 1, The body comprises a conductive coating, Apparatus for processing a substrate arranged in a physical vapor deposition chamber. The method of claim 1, The plurality of holes are slots formed in the flange, Apparatus for processing a substrate arranged in a physical vapor deposition chamber. The method of claim 1, The ground shield further comprising an upper edge arranged parallel to an adjacent surface of the target in a substantially parallel spaced relationship; Apparatus for processing a substrate arranged in a physical vapor deposition chamber. The method of claim 1, Further comprising a ground frame having a bottom side configured to engage a flange of the ground shield; Apparatus for processing a substrate arranged in a physical vapor deposition chamber. The method of claim 8, The ground frame further comprises an insulating plate configured to engage an upper side of the ground frame, Apparatus for processing a substrate arranged in a physical vapor deposition chamber. The method of claim 9, The insulating plate comprises at least one of acetal homopolymer, polyether ether ketone, polytetrafluoroethylene, polyvinyl chloride, or glass reinforced plastic, Apparatus for processing a substrate arranged in a physical vapor deposition chamber. The method of claim 8, The ground frame, An insulating plate for connecting to the lead assembly, and Further comprising a conductive frame configured to engage the insulating plate, Apparatus for processing a substrate arranged in a physical vapor deposition chamber. The method of claim 11, The conductive frame comprises one or more stainless steel or aluminum, Apparatus for processing a substrate arranged in a physical vapor deposition chamber. The method of claim 1, The ground shield further comprises a plurality of segments; Apparatus for processing a substrate arranged in a physical vapor deposition chamber. The method of claim 14, Each of the plurality of segments, A conductive wall having a front portion forming a lower portion of the inner wall, and Further comprising an upper portion of the inner wall arranged adjacent to the conductive wall and not parallel and perpendicular to the front portion of the conductive wall, Apparatus for processing a substrate arranged in a physical vapor deposition chamber. A processing apparatus for a substrate arranged in a physical vapor deposition chamber having a target and ground chamber wall arranged in a lid assembly, the apparatus comprising: A ring shaped body providing at least a portion of the conductive passageway to the deposition chamber, The body, A wall having a lower inner surface on which a rectangular body is formed and an upper inner surface angled outwardly from the lower inner surface, and A flange having a plurality of mounting holes extending outwardly from the wall and formed therethrough; Apparatus for processing a substrate arranged in a physical vapor deposition chamber. The method of claim 15, The body further comprises a plurality of segments, Apparatus for processing a substrate arranged in a physical vapor deposition chamber. The method of claim 16, A ground frame surrounding the body and engaging the flange, Apparatus for processing a substrate arranged in a physical vapor deposition chamber. The method of claim 17, Each of the plurality of segments is independently adjustable with respect to the ground frame; Apparatus for processing a substrate arranged in a physical vapor deposition chamber. The method of claim 15, Wherein the ground shield comprises one or more stainless steel or aluminum, Apparatus for processing a substrate arranged in a physical vapor deposition chamber. The method of claim 15, The ground shield is coated with a conductive material, Apparatus for processing a substrate arranged in a physical vapor deposition chamber. The method of claim 15, A conductive ground frame further having a cutout surrounding the body and configured to receive a flange of the ground shield, Apparatus for processing a substrate arranged in a physical vapor deposition chamber.

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