KR20040073869A - 발광 소자의 광 반사체 구조 및 그를 이용한 발광 소자패키지 - Google Patents
발광 소자의 광 반사체 구조 및 그를 이용한 발광 소자패키지 Download PDFInfo
- Publication number
- KR20040073869A KR20040073869A KR1020030009619A KR20030009619A KR20040073869A KR 20040073869 A KR20040073869 A KR 20040073869A KR 1020030009619 A KR1020030009619 A KR 1020030009619A KR 20030009619 A KR20030009619 A KR 20030009619A KR 20040073869 A KR20040073869 A KR 20040073869A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- emitting device
- light
- reflector
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 6
- 239000004593 Epoxy Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
Abstract
Description
파장 \금속 | Al | Au | Ni | Pd | Pt |
400㎚ | 67.0(%) | 25.6(%) | 30.7(%) | 41.4(%) | 39.5(%) |
460㎚ | 76.7(%) | 29.2(%) | 37.1(%) | 46.5(%) | 46.6(%) |
Claims (5)
- 발광 소자의 광 반사체 구조에 있어서,상기 반사체의 표면에는 유전체 미러층이 형성되어 있고, 이 유전체 미러층의 상부에 발광 소자가 실장되는 것을 특징으로 하는 발광 소자의 광 반사체 구조.
- 제 1 항에 있어서,상기 반사체는 컵 형상이며,상기 유전체 미러층은 컵 내부면에 코팅되어 있는 것을 특징으로 하는 발광 소자의 광 반사체 구조.
- 제 1 항 또는 제 2 항에 있어서,상기 유전체 미러층은,SiO2막, SiO2막의 적층막, TiO2막, TiO2막의 적층막, SiO2와 TiO2막이 조합되어 적층된 막들 중 선택된 어느 하나 인 것을 특징으로 하는 발광 소자의 광 반사체 구조.
- 각각 분리되어 있는 제 1과 2 리드프레임과;상기 1 리드프레임에 고정되어 있으며, 표면에 유전체 미러막이 코팅된 반사체와;상기 반사체에 본딩된 발광소자와;상기 발광소자에 형성된 전극패드들과 각각 상기 제 1과 2 리드프레임을 전기적 연결하는 와이어와;상기 발광 소자와 제 1과 2 리드프레임을 외부로 보호하기 위해 밀봉되는 투명 에폭시가 포함되어 구성된 발광 소자의 광 반사체 구조를 이용한 발광 소자 패키지.
- 제 4 항에 있어서,상기 반사체는 컵 형상이며,상기 유전체 미러막은 이종 또는 동종 유전체막이 적층된 막인 것을 특징으로 하는 발광 소자의 광 반사체 구조를 이용한 발광 소자 패키지.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030009619A KR20040073869A (ko) | 2003-02-15 | 2003-02-15 | 발광 소자의 광 반사체 구조 및 그를 이용한 발광 소자패키지 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030009619A KR20040073869A (ko) | 2003-02-15 | 2003-02-15 | 발광 소자의 광 반사체 구조 및 그를 이용한 발광 소자패키지 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20040073869A true KR20040073869A (ko) | 2004-08-21 |
Family
ID=37360827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030009619A Ceased KR20040073869A (ko) | 2003-02-15 | 2003-02-15 | 발광 소자의 광 반사체 구조 및 그를 이용한 발광 소자패키지 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20040073869A (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100986571B1 (ko) * | 2010-02-04 | 2010-10-07 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
US7858993B2 (en) | 2007-04-19 | 2010-12-28 | Lg Innotek Co., Ltd. | Light emitting device package and light unit having the same |
CN109192842A (zh) * | 2018-10-29 | 2019-01-11 | 广州市香港科大霍英东研究院 | 一种紫外线发光二极管封装结构 |
-
2003
- 2003-02-15 KR KR1020030009619A patent/KR20040073869A/ko not_active Ceased
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8536586B2 (en) | 2007-04-19 | 2013-09-17 | Lg Innotek Co., Ltd. | Light emitting device package and light unit having the same |
US9018644B2 (en) | 2007-04-19 | 2015-04-28 | Lg Innotek Co., Ltd. | Light emitting device package and light unit having the same |
US8022415B2 (en) | 2007-04-19 | 2011-09-20 | Lg Innotek Co., Ltd. | Light emitting device package and light unit having the same |
US8101956B2 (en) * | 2007-04-19 | 2012-01-24 | Lg Innotek Co., Ltd. | Light emitting device package and light unit having the same |
US8299474B2 (en) | 2007-04-19 | 2012-10-30 | Lg Innotek Co., Ltd. | Light emitting device package and light unit having the same |
US9666775B2 (en) | 2007-04-19 | 2017-05-30 | Lg Innotek Co., Ltd. | Light emitting device package and light unit having the same |
US7858993B2 (en) | 2007-04-19 | 2010-12-28 | Lg Innotek Co., Ltd. | Light emitting device package and light unit having the same |
US8890176B2 (en) | 2007-04-19 | 2014-11-18 | Lg Innotek Co., Ltd. | Light emitting device package and light unit having the same |
US9559275B2 (en) | 2007-04-19 | 2017-01-31 | Lg Innotek Co., Ltd. | Light emitting device package and light unit having the same |
US8994038B2 (en) | 2007-04-19 | 2015-03-31 | Lg Innotek Co., Ltd. | Light emitting device package and light unit having the same |
US8692262B2 (en) | 2007-04-19 | 2014-04-08 | Lg Innotek Co., Ltd. | Light emitting device package and light unit having the same |
US9252347B2 (en) | 2007-04-19 | 2016-02-02 | Lg Innotek Co., Ltd. | Light emitting device package and light unit having the same |
KR100986571B1 (ko) * | 2010-02-04 | 2010-10-07 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
US8519418B2 (en) | 2010-02-04 | 2013-08-27 | Lg Innotek Co., Ltd. | Light emitting device package having dielectric pattern on reflective layer |
CN109192842A (zh) * | 2018-10-29 | 2019-01-11 | 广州市香港科大霍英东研究院 | 一种紫外线发光二极管封装结构 |
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PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20030215 |
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PA0201 | Request for examination | ||
PG1501 | Laying open of application | ||
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20050128 Patent event code: PE09021S01D |
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E601 | Decision to refuse application | ||
PE0601 | Decision on rejection of patent |
Patent event date: 20050808 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20050128 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |