KR20040003167A - Wafer develop apparatus - Google Patents
Wafer develop apparatus Download PDFInfo
- Publication number
- KR20040003167A KR20040003167A KR1020020037532A KR20020037532A KR20040003167A KR 20040003167 A KR20040003167 A KR 20040003167A KR 1020020037532 A KR1020020037532 A KR 1020020037532A KR 20020037532 A KR20020037532 A KR 20020037532A KR 20040003167 A KR20040003167 A KR 20040003167A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- spray nozzle
- spray
- developer
- developing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007921 spray Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000002347 injection Methods 0.000 claims abstract description 12
- 239000007924 injection Substances 0.000 claims abstract description 12
- 230000007547 defect Effects 0.000 abstract description 4
- 238000004904 shortening Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 67
- 230000018109 developmental process Effects 0.000 description 13
- 238000005507 spraying Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
본 발명은 웨이퍼 현상 장치에 관한 것으로, 노광 공정을 마친 웨이퍼가 로딩되는 웨이퍼 척과, 십자형 구조체에 설치된 다수의 분사구를 통하여 현상액을 웨이퍼상에 도포하는 제 1 분사 노즐과, 웨이퍼 척에 로딩된 웨이퍼와 수직을 이루지 않고 경사지게 대향하도록 설치되어 현상액을 웨이퍼상에 분사하는 스프레이 또는 스트림 타입의 제 2 분사 노즐을 포함하며, 십자형의 분사 노즐은 종래의 일자형 분사 노즐에 비하여 동일 시간 동안 분사하는 현상액의 유량이 증대되어 현상 시간을 단축하며, 스프레이 또는 스트림 타입의 분사 노즐은 미세한 회로 패턴 사이에 가려져 있는 현상 결함을 제거함으로써, 현상 균일성이 향상되는 이점이 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer developing apparatus, comprising: a wafer chuck loaded with a wafer after an exposure process, a first spray nozzle for applying a developer onto a wafer through a plurality of injection holes provided in a cross structure, a wafer loaded on a wafer chuck; And a second spray nozzle of a spray or stream type which is installed to face the wafer at an inclined angle without being perpendicular to the wafer. The cross-shaped spray nozzle has a flow rate of the developer that is sprayed for the same time as compared to a conventional straight spray nozzle. Increased and shortening the development time, the spray or stream type spray nozzle has the advantage that the development uniformity is improved by removing the development defects that are hidden between the fine circuit pattern.
Description
본 발명은 웨이퍼 현상 장치에 관한 것으로, 특히 복수의 현상액 분사 노즐을 채택하여 현상 시간을 단축함과 아울러 현상 균일성(Develop Uniformity)이 향상되도록 한 웨이퍼 현상 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer developing apparatus, and more particularly, to a wafer developing apparatus which reduces development time and improves development uniformity by adopting a plurality of developer spray nozzles.
주지와 같이, 반도체 제조 공정 중 포토 리소그래피(Photo Lithography) 공정은 패턴을 형성하는 가장 중요한 공정 중의 하나이다. 기본적인 포토 공정은 감광막 도포, 소프트 베이크(Soft Bake), 노광(Expose), 베이크(Bake),현상(Develop)의 순서로 수행되며, 감광막은 노광 공정 이후에 노광된 영역과 노광되지 않은 부분이 구별되어 현상시 감광막의 특성에 따라 반도체 기판에 남거나 제거된다. 즉 현상시 현상액과 반응하여 빛을 받는 부분과 받지 않는 부분이 구별되어 패턴(회로)이 형성된다.As is well known, the photolithography process is one of the most important processes for forming a pattern. The basic photo process is performed in the order of application of photoresist, soft bake, exposure, bake, and develop, and the photoresist is distinguished from the exposed and unexposed areas after the exposure process. During development, they remain or are removed from the semiconductor substrate depending on the characteristics of the photosensitive film. In other words, a pattern (circuit) is formed by distinguishing a portion that receives light and a portion that does not receive light by reacting with the developer during development.
한편, 분사 노즐은 웨이퍼 상에 구현되는 회로 패턴의 미세화에 따라서 미세패턴 현상 균일성을 최대한 얻기 위하여 각종 형태가 이용되고 있다.On the other hand, the spray nozzle is used in various forms to obtain the fine pattern development uniformity as the circuit pattern is realized on the wafer.
도 1에 도시된 종래의 제 1 실시예에 따른 웨이퍼 현상 장치의 구성을 살펴보면, 전면에 포토 레지스트를 도포한 후 노광 공정을 마친 웨이퍼가 로딩되는 웨이퍼 척(11)과, 직방체의 하우징에 설치된 다수의 분사구를 통하여 현상액을 웨이퍼상에 도포하는 분사 노즐(13)로 이루어진다.Referring to the configuration of the wafer developing apparatus according to the first embodiment of the present invention shown in FIG. 1, a wafer chuck 11 in which a wafer is loaded after a photoresist is coated on a front surface and then subjected to an exposure process, and a plurality of wafers are installed in a rectangular parallelepiped housing. It consists of the injection nozzle 13 which apply | coats a developing solution on a wafer through the injection hole of.
이러한 형태의 분사 노즐은 멀티 스프레이(Multi Spray) 또는 멀티 스트림(Multi Stream) 타입으로서, E2 노즐로 통칭된다.This type of spray nozzle is a multi spray or multi stream type, commonly referred to as an E2 nozzle.
도 2에 도시된 종래의 제 2 실시예에 따른 웨이퍼 현상 장치의 구성을 살펴보면, 전면에 포토 레지스트를 도포한 후 노광 공정을 마친 웨이퍼가 로딩되는 웨이퍼 척(22)과, 웨이퍼의 양끝을 오가며 스캔하여 웨이퍼 전면에 현상액을 분사하는 분사 노즐(24)로 이루어진다.Referring to the configuration of the wafer developing apparatus according to the second embodiment of the present invention shown in FIG. 2, a wafer chuck 22 loaded with a wafer after a photoresist is coated on a front surface and then subjected to exposure is scanned between both ends of the wafer. It consists of the injection nozzle 24 which injects a developing solution to the front surface of a wafer.
이러한 형태의 분사 노즐은 스트림 타입으로서, SS 노즐로 통칭된다.This type of spray nozzle is a stream type, commonly referred to as SS nozzle.
상기와 같이 구성된 웨이퍼 현상 장치에 의한 웨이퍼 현상 과정을 살펴보면, 노광된 웨이퍼가 웨이퍼 척으로 전달되면 웨이퍼 척 표면의 진공(Vacuum)으로 웨이퍼를 고정하며, 웨이퍼 척을 회전시키면서 현상액 분사 노즐을 통해 웨이퍼 상면에현상액을 뿌린 후에 웨이퍼 척을 정지시킨다. 이때 현상액이 웨이퍼의 표면에 남게되고 이 상태를 일정시간 유지하면 현상이 된다.Looking at the wafer development process by the wafer developing apparatus configured as described above, when the exposed wafer is transferred to the wafer chuck, the wafer is fixed by vacuum on the surface of the wafer chuck, and the wafer upper surface is rotated through the developer spray nozzle while rotating the wafer chuck. After spraying the developer, the wafer chuck is stopped. At this time, the developer is left on the surface of the wafer and is maintained when the state is maintained for a certain time.
그러나, 상기한 제 1 실시예에 따른 웨이퍼 현상 장치는 현상액이 과다하게 사용되는 문제점이 있었으며, 제 2 실시예에 따른 웨이퍼 현상 장치는 현상 시간이 많이 소요됨과 아울러 현상액이 외줄기로 지속 분사되므로 분사되는 압력에 의하여 패턴이 손상되어 불량을 유발시키는 문제점이 있었다.However, the wafer developing apparatus according to the first embodiment has a problem in that a developer is excessively used, and the wafer developing apparatus according to the second embodiment takes a long time to develop and is sprayed because the developer is continuously sprayed into an outer stem. There was a problem that the pattern is damaged by the pressure causing a defect.
본 발명은 이와 같은 종래의 문제점을 해결하기 위하여 제안한 것으로, 복수의 현상액 분사 노즐을 채택하여 현상 시간을 단축함과 아울러 현상 균일성이 향상되도록 한 웨이퍼 현상 장치를 제공하는 데 그 목적이 있다.The present invention has been proposed to solve such a conventional problem, and an object thereof is to provide a wafer developing apparatus which adopts a plurality of developer spray nozzles to shorten the developing time and improve the developing uniformity.
이와 같은 목적을 실현하기 위한 본 발명에 따른 웨이퍼 현상 장치는, 노광 공정을 마친 웨이퍼가 로딩되는 웨이퍼 척과, 십자형 구조체에 설치된 다수의 분사구를 통하여 현상액을 웨이퍼상에 도포하는 제 1 분사 노즐과, 상기 웨이퍼 척에 로딩된 웨이퍼와 수직을 이루지 않고 경사지게 대향하도록 설치되어 현상액을 웨이퍼상에 분사하는 스프레이 또는 스트림 타입의 제 2 분사 노즐을 포함한다.A wafer developing apparatus according to the present invention for realizing such an object comprises a wafer chuck on which a wafer having been subjected to an exposure process is loaded, a first spray nozzle for applying a developer onto a wafer through a plurality of spray holes provided in the cross-shaped structure, and And a second spray nozzle of a spray or stream type installed so as to face the wafer loaded on the wafer chuck so as not to be perpendicular to the wafer, but to inject the developer onto the wafer.
도 1은 종래의 제 1 실시예에 따른 웨이퍼 현상 장치의 구성도,1 is a configuration diagram of a wafer developing apparatus according to a first embodiment of the present invention;
도 2는 종래의 제 2 실시예에 따른 웨이퍼 현상 장치의 구성도,2 is a block diagram of a wafer developing apparatus according to a second conventional embodiment;
도 3a 및 도 3b는 본 발명에 따른 웨이퍼 현상 장치의 평면도 및 정면도.3A and 3B are a plan view and a front view of a wafer developing apparatus according to the present invention.
<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>
100 : 웨이퍼 200 : 제 1 분사 노즐100 wafer 200 first injection nozzle
201 : 분사구 300 : 제 2 분사 노즐201: injection hole 300: second injection nozzle
400 : 웨이퍼 척400: Wafer Chuck
본 발명의 실시예로는 다수개가 존재할 수 있으며, 이하에서는 첨부한 도면을 참조하여 바람직한 실시예에 대하여 상세히 설명하기로 한다. 이 실시예를 통해 본 발명의 목적, 특징 및 이점들을 보다 잘 이해할 수 있게 된다.There may be a plurality of embodiments of the present invention. Hereinafter, preferred embodiments will be described in detail with reference to the accompanying drawings. This embodiment allows for a better understanding of the objects, features and advantages of the present invention.
도 3a 및 도 3b는 본 발명에 따른 웨이퍼 현상 장치의 평면도 및 정면도이다.3A and 3B are a plan view and a front view of a wafer developing apparatus according to the present invention.
본 발명의 웨이퍼 현상 장치는, 전면에 포토 레지스트를 도포한 후 노광 공정을 마친 웨이퍼(100)가 로딩되는 웨이퍼 척(400)과, 십자형 구조체에 설치된 다수의 분사구(201)를 통하여 현상액을 웨이퍼(100)상에 도포하는 제 1 분사 노즐(200)과, 웨이퍼 척(400)에 로딩된 웨이퍼(100)와 수직을 이루지 않고 경사지게 대향하도록 설치되어 현상액을 웨이퍼(100)상에 분사하는 스프레이(Spray) 또는 스트림(Stream) 타입의 제 2 분사 노즐(300)로 이루어진다.In the wafer developing apparatus of the present invention, the developer is transferred to the wafer through a wafer chuck 400 loaded with the wafer 100 after the photoresist is applied to the entire surface, and a plurality of injection holes 201 provided in the cross-shaped structure. The first spray nozzle 200 applied on the 100 and the wafer 100 loaded on the wafer chuck 400 are installed so as to face each other in an inclined manner without being perpendicular to each other, and spray the developer onto the wafer 100. Or a second spray nozzle 300 of a stream type.
제 1 분사 노즐(200)은 두 개의 직방체 분사 노즐(210, 220)(도 1 참조)을 십자형으로 결합시켜 제작할 수 있으며, 제 2 분사 노즐(300)은 웨이퍼(100)와 86 내지 88로 경사지도록 설치하는 것이 바람직하다.The first spray nozzle 200 may be fabricated by combining two rectangular parallelepiped nozzles 210 and 220 (see FIG. 1) in a cross shape, and the second spray nozzle 300 is inclined to the wafer 100 to 86 to 88. It is desirable to install so that.
이와 같이 구성된 본 발명에 따른 웨이퍼 현상 장치에 의한 현상 과정을 상세히 설명하면 다음과 같다.The developing process by the wafer developing apparatus according to the present invention configured as described above will be described in detail as follows.
먼저, 노광된 웨이퍼(100)가 웨이퍼 척(400)으로 전달되면 웨이퍼 척(400) 표면의 진공(Vacuum)으로 웨이퍼(100)를 고정하며, 웨이퍼 척(400)을 회전 및 상하 이동시키면서 제 1 분사 노즐(200)을 통해 웨이퍼(100) 상면에 현상액을 도포한다.First, when the exposed wafer 100 is transferred to the wafer chuck 400, the wafer 100 is fixed by a vacuum on the surface of the wafer chuck 400, and the first and second wafers are rotated and moved up and down. The developer is applied onto the upper surface of the wafer 100 through the spray nozzle 200.
이때, 웨이퍼 척(400)은 360도 회전, 90도 회전, 360도 회전, 상하 이동(약 10㎜)의 순서로 반복 구동시키며, 이로서 노광에 의해 형성된 회로 패턴에 현상액이 쉽게 노출된다. 즉 웨이퍼 척(400)의 상하 이동은 패턴 표면까지 현상액이 스며드는 것을 도우며, 회전 각도가 변화되는 웨이퍼 척(400)의 가변적 회전 운동은 웨이퍼(100) 표면에 도포된 현상액이 넓게 확산될 수 있도록 돕는다.At this time, the wafer chuck 400 is repeatedly driven in the order of 360 degree rotation, 90 degree rotation, 360 degree rotation and vertical movement (about 10 mm), whereby the developer is easily exposed to the circuit pattern formed by exposure. That is, the vertical movement of the wafer chuck 400 helps the developer penetrate to the pattern surface, and the variable rotational movement of the wafer chuck 400 whose rotation angle is changed helps the developer applied to the surface of the wafer 100 to be widely spread. .
이후, 웨이퍼 척(400)과 제 1 분사 노즐(200)을 정지시켜 1차 분사 공정을 완료하는데, 후속 공정에서 제 2 분사 노즐(300)을 이용한 2차 분사 공정이 수행되므로 현상액을 과도하게 도포할 필요는 없다.Thereafter, the wafer chuck 400 and the first spray nozzle 200 are stopped to complete the primary spray process. In the subsequent process, the secondary spray process using the second spray nozzle 300 is performed, so that the developer is excessively coated. There is no need to do it.
다음으로, 1차 분사 공정의 완료 후 일정시간이 경과하면 웨이퍼 척(400)을 회전시키면서 제 2 분사 노즐(300)을 이용하여 웨이퍼(100) 표면에 다시 한번 현상액을 분사하는 2차 분사 공정을 수행한다. 이때 현상액이 웨이퍼(100)에 비스듬하게 분사되므로 미세한 회로 패턴 사이에 가려져 있는 현상 결함이 제거된다.Next, when a predetermined time elapses after completion of the primary spraying process, the secondary spraying process of spraying the developer on the surface of the wafer 100 using the second spraying nozzle 300 while rotating the wafer chuck 400 is performed. Perform. At this time, since the developer is injected obliquely onto the wafer 100, development defects that are hidden between the fine circuit patterns are removed.
상기와 같은 현상액 분사 공정을 완료한 후 이 상태를 일정시간 유지하면 현상이 된다.If the state is maintained for a certain time after completing the developer solution injection process as described above, a phenomenon occurs.
현상이 완료되면 현상시 발생된 이물질을 제거하기 위해 세정액 분사관을 통해 웨이퍼 상면에 초순수를 일정한 압력으로 뿌리면서 웨이퍼 척을 회전시켜 웨이퍼 상의 이물질을 제거하는 세정 공정을 수행한다.When the development is completed, a cleaning process is performed to remove the foreign matter on the wafer by rotating the wafer chuck while spraying ultrapure water at a constant pressure on the upper surface of the wafer through the cleaning liquid injection tube to remove the foreign matter generated during the development.
이물질이 제거될 정도로 세정을 한 후에 웨이퍼 척을 고속 회전시켜 웨이퍼를 건조시키면 현상이 끝나게 되고 패턴 형성이 완료된다.After cleaning to the extent that foreign matters are removed, the wafer chuck is rotated at high speed to dry the wafer, and the development is completed and the pattern formation is completed.
상기에서는 본 발명의 일 실시예에 국한하여 설명하였으나 본 발명의 기술이 당업자에 의하여 용이하게 변형 실시될 가능성이 자명하다. 이러한 변형된 실시예들은 본 발명의 특허청구범위에 기재된 기술사상에 포함된다고 하여야 할 것이다.In the above description, but limited to one embodiment of the present invention, it is obvious that the technology of the present invention can be easily modified by those skilled in the art. Such modified embodiments should be included in the technical spirit described in the claims of the present invention.
전술한 바와 같이 본 발명은 복수의 현상액 분사 노즐을 채택되는데, 십자형의 분사 노즐은 종래의 일자형 분사 노즐에 비하여 동일 시간 동안 분사하는 현상액의 유량이 증대되어 현상 시간을 단축하며, 스프레이 또는 스트림 타입의 분사 노즐은 미세한 회로 패턴 사이에 가려져 있는 현상 결함을 제거함으로써, 현상 균일성이 향상되는 효과가 있다.As described above, the present invention adopts a plurality of developer spray nozzles, and the cross-shaped spray nozzles increase the flow rate of the developer sprayed for the same time compared to the conventional straight spray nozzles, thereby shortening the development time, and reducing the spray or stream type. The injection nozzle has an effect of improving the development uniformity by removing the development defect that is hidden between the fine circuit patterns.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2002-0037532A KR100481537B1 (en) | 2002-06-29 | 2002-06-29 | Wafer develop apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2002-0037532A KR100481537B1 (en) | 2002-06-29 | 2002-06-29 | Wafer develop apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20040003167A true KR20040003167A (en) | 2004-01-13 |
| KR100481537B1 KR100481537B1 (en) | 2005-04-08 |
Family
ID=37314203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2002-0037532A Expired - Fee Related KR100481537B1 (en) | 2002-06-29 | 2002-06-29 | Wafer develop apparatus |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100481537B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101710615B1 (en) | 2016-09-07 | 2017-02-27 | 주식회사 파마리서치프로덕트 | Dermal matrix for transplantation having improved survival rate and method for preparing thereof |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5625433A (en) * | 1994-09-29 | 1997-04-29 | Tokyo Electron Limited | Apparatus and method for developing resist coated on a substrate |
| JP2000269110A (en) * | 1999-03-12 | 2000-09-29 | Nec Corp | Development apparatus for resist |
| JP3322249B2 (en) * | 1999-08-20 | 2002-09-09 | 日本電気株式会社 | Developing device and developing method |
| KR20010048187A (en) * | 1999-11-25 | 2001-06-15 | 윤종용 | Apparatus for developing pattern |
| KR20010058374A (en) * | 1999-12-27 | 2001-07-05 | 박종섭 | Nozzle for semiconductor developer |
| JP2001284207A (en) * | 2000-03-30 | 2001-10-12 | Sharp Corp | Method of manufacturing semiconductor device |
| JP2001284246A (en) * | 2000-03-31 | 2001-10-12 | Toshiba Corp | Rotary developer |
-
2002
- 2002-06-29 KR KR10-2002-0037532A patent/KR100481537B1/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101710615B1 (en) | 2016-09-07 | 2017-02-27 | 주식회사 파마리서치프로덕트 | Dermal matrix for transplantation having improved survival rate and method for preparing thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100481537B1 (en) | 2005-04-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0794463B1 (en) | Resist develop process having a post develop dispense step | |
| CN101393401A (en) | Developing method of photolithographic process | |
| KR0171943B1 (en) | Micro-pattern forming method of semiconductor device | |
| KR100481537B1 (en) | Wafer develop apparatus | |
| CN104570626A (en) | Method for improving uniformity of critical sizes and defect rate of pinholes | |
| KR100534099B1 (en) | Photoresist developer | |
| KR100269318B1 (en) | Method for developing photoresist formed on wafer | |
| KR100591156B1 (en) | Spin coater and manufacturing method of semiconductor device using same | |
| KR100307632B1 (en) | Method for forming a photosensitive film pattern | |
| KR100842736B1 (en) | Manufacturing Method of Semiconductor Device | |
| KR100488930B1 (en) | Developer and deionized water application device of developing equipment | |
| KR100472732B1 (en) | Semiconductor device manufacturing method | |
| JP3991404B2 (en) | Edge development method | |
| KR19990035265A (en) | Development Method of Semiconductor Photosensitive Film | |
| KR20020068130A (en) | Method for providing an improved developing process in a semiconductor device manufacturing process | |
| JPH05181286A (en) | Improvement in shape of resist pattern | |
| KR100744277B1 (en) | Wafer Edge Bead Removal Device | |
| KR19990061064A (en) | Manufacturing method of fine pattern of semiconductor device | |
| KR100607789B1 (en) | Exposure Method of Photolithography Process | |
| KR20000025673A (en) | Baking device for manufacturing semiconductor device | |
| KR100649014B1 (en) | Device for removing photoresist residue | |
| KR100823035B1 (en) | Manufacturing Method of Semiconductor Device | |
| KR20010009035A (en) | A method of developing photoresist | |
| JPS59104643A (en) | Photoresist developing method | |
| KR20010049038A (en) | method of removing photoresist semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20020629 |
|
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20020703 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20020629 Comment text: Patent Application |
|
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20040525 Patent event code: PE09021S01D |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20050115 |
|
| N231 | Notification of change of applicant | ||
| PN2301 | Change of applicant |
Patent event date: 20050203 Comment text: Notification of Change of Applicant Patent event code: PN23011R01D |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20050329 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 20050330 End annual number: 3 Start annual number: 1 |
|
| PG1601 | Publication of registration | ||
| FPAY | Annual fee payment |
Payment date: 20080103 Year of fee payment: 4 |
|
| PR1001 | Payment of annual fee |
Payment date: 20080103 Start annual number: 4 End annual number: 4 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
Termination category: Default of registration fee Termination date: 20100210 |