KR20020045162A - Image sensor having microlens made of oxide layer and method for forming the same - Google Patents
Image sensor having microlens made of oxide layer and method for forming the same Download PDFInfo
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- H—ELECTRICITY
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- H—ELECTRICITY
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
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Abstract
Description
본 발명은 이미지 센서 제조 분야에 관한 것으로, 특히 칼라필터 형성시 유발되는 단차에 의한 마이크로 렌즈의 변형을 방지할 수 있는 이미지 센서 및 그 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the field of image sensor manufacturing, and more particularly, to an image sensor and a method of manufacturing the same, which can prevent deformation of a micro lens due to a step caused when a color filter is formed.
이미지 센서(image sensor)는 1차원 또는 2차원 이상의 광학 정보를 전기신호로 변환하는 장치이다. 이미지 센서의 종류는 크게 나누어 촬상관과 고체 촬상 소자로 분류된다. 촬상관은 텔레비전을 중심으로 하여 화상처리기술을 구사한 계측, 제어, 인식 등에서 널리 상용되며 응용 기술이 발전되었다. 시판되는 고체의 이미지 센서는 MOS(metal-oxide-semiconductor)형과 CCD(charge coupled device)형의 2종류가 있다.An image sensor is an apparatus that converts optical information of one or two dimensions or more into an electrical signal. The types of image sensors are broadly classified into imaging tubes and solid-state imaging devices. Imaging tubes are widely used in measurement, control, and recognition using image processing technology centered on televisions, and applied technologies have been developed. There are two types of solid-state image sensors on the market: metal-oxide-semiconductor (MOS) type and charge coupled device (CCD) type.
CMOS 이미지 센서는 CMOS 제조 기술을 이용하여 광학적 이미지를 전기적신호로 변환시키는 소자로서, 픽셀수 만큼 MOS트랜지스터를 만들고 이것을 이용하여 차례차례 출력을 검출하는 스위칭 방식을 채용하고 있다. CMOS 이미지 센서는, 종래 이미지센서로 널리 사용되고 있는 CCD 이미지센서에 비하여 구동 방식이 간편하고 다양한 스캐닝 방식의 구현이 가능하며, 신호처리 회로를 단일칩에 집적할 수 있어 제품의 소형화가 가능할 뿐만 아니라, 호환성의 CMOS 기술을 사용하므로 제조 단가를 낮출 수 있고, 전력 소모 또한 크게 낮다는 장점을 지니고 있다.CMOS image sensor is a device that converts an optical image into an electrical signal using CMOS fabrication technology, and employs a switching method that makes MOS transistors as many as the number of pixels and uses them to sequentially detect the output. The CMOS image sensor is simpler to drive than the CCD image sensor, which is widely used as a conventional image sensor, and can realize various scanning methods, and can integrate a signal processing circuit into a single chip, thereby miniaturizing the product. The use of compatible CMOS technology reduces manufacturing costs and significantly lowers power consumption.
도 1은 4개의 트랜지스터와 2개의 캐패시턴스 구조로 이루어지는 CMOS 이미지센서의 단위픽셀을 보이는 회로도로서, 광감지 수단인 포토다이오드(PD)와 4개의NMOS트랜지스터로 구성되는 CMOS 이미지센서의 단위픽셀을 보이고 있다. 4개의 NMOS트랜지스터 중 트랜스퍼 트랜지스터(Tx)는 포토다이오드(PD)에서 생성된 광전하를 플로팅 확산영역으로 운송하는 역할을 하고, 리셋 트랜지스터(Rx)는 신호검출을 위해 상기 플로팅 확산영역에 저장되어 있는 전하를 배출하는 역할을 하고, 드라이브 트랜지스터(Dx)는 소스팔로워(Source Follower)로서 역할하며, 셀렉트 트랜지스터(Sx)는 스위칭(Switching) 및 어드레싱(Addressing)을 위한 것이다. 도면에서 "Cf"는 플로팅 확산영역이 갖는 캐패시턴스를, "Cp"는 포토다이오드가 갖는 캐패시턴스를 각각 나타낸다.FIG. 1 is a circuit diagram showing a unit pixel of a CMOS image sensor composed of four transistors and two capacitance structures, and a unit pixel of a CMOS image sensor composed of a photodiode (PD) as a light sensing means and four NMOS transistors. . Of the four NMOS transistors, the transfer transistor Tx serves to transport the photocharges generated by the photodiode PD to the floating diffusion region, and the reset transistor Rx is stored in the floating diffusion region for signal detection. It serves to discharge the charge, the drive transistor (Dx) serves as a source follower (Source Follower), the select transistor (Sx) is for switching (Switching) and addressing (Addressing). In the drawing, "Cf" represents capacitance of the floating diffusion region, and "Cp" represents capacitance of the photodiode, respectively.
이와 같이 구성된 이미지센서 단위픽셀에 대한 동작은 다음과 같이 이루어진다. 처음에는 리셋 트랜지스터(Rx), 트랜스퍼 트랜지스터(Tx) 및 셀렉트 트랜지스터(Sx)를 온(on)시켜 단위픽셀을 리셋시킨다. 이때 포토다이오드(PD)는 공핍되기 시작하여 캐패시턴스 Cp는 전하축적(carrier changing)이 발생하고, 플로팅 확산영역의 캐패시턴스 Cf는 공급전압 VDD 전압까지 전하축전된다. 그리고 트랜스퍼 트랜지스터(Tx)를 오프시키고 셀렉트 트랜지스터(Sx)를 온시킨 다음 리셋트랜지스터(Rx)를 오프시킨다. 이와 같은 동작 상태에서 단위픽셀 출력단(Out)으로부터 출력전압 V1을 읽어 버퍼에 저장시키고 난 후, 트랜스퍼 트랜지스터(Tx)를 온시켜 빛의 세기에 따라 변화된 캐패시턴스 Cp의 캐리어들을 캐패시턴스 Cf로 이동시킨 다음, 다시 출력단(Out)에서 출력전압 V2를 읽어들여 V1 - V2에 대한 아날로그 데이터를 디지털 데이터로 변경시키므로 단위픽셀에 대한 한 동작주기가 완료된다.Operation of the image sensor unit pixel configured as described above is performed as follows. Initially, the reset pixel Rx, the transfer transistor Tx, and the select transistor Sx are turned on to reset the unit pixel. At this time, the photodiode PD starts to deplete, and the capacitance Cp generates a carrier change, and the capacitance Cf of the floating diffusion region is charged up to the supply voltage VDD. The transfer transistor Tx is turned off, the select transistor Sx is turned on, and the reset transistor Rx is turned off. In this operation state, after reading the output voltage V1 from the unit pixel output terminal Out and storing it in the buffer, the transfer transistor Tx is turned on to move the carriers of the capacitance Cp changed according to the light intensity to the capacitance Cf. The output voltage V2 is read again from the output terminal, and the analog data for V1-V2 is converted into digital data, thereby completing one operation cycle for the unit pixel.
화상인식 소자로 사용되는 이미지센서는 입사하는 빛을 손실없이 전자로 바꾸는 능력이 중요하다. 입사하는 빛을 전자로 바꾸어 주는 역할을 하는 소자가 포토다이오드인데, 통상 이미지센서의 단위픽셀에는 도 1에 보이는 바와 같이 포토다이오드 뿐만 아니라 단위픽셀 내부의 신호처리를 위한 회로가 복합적으로 구성되기 때문에 포토다이오드의 면적에 제한이 따르게 된다. 이를 극복하기 위하여 단위픽셀 상부에 마이크로렌즈를 형성하여 단위픽셀로 입사하는 빛 중에서 포토다이오드 영역 이외의 지역으로 입사하는 빛을 포토다이오드로 모아준다. 이와 같이 마이크로 렌즈를 형성하는 방법을 통하여 이미지 센서의 광집속도를 향상시킬 수 있다.The image sensor used as an image recognition element is important in the ability to convert incident light into electrons without loss. A device that converts incident light into electrons is a photodiode. As shown in FIG. 1, a photodiode as well as a photodiode as well as a circuit for signal processing inside a unit pixel are composed in a unit pixel of an image sensor. There is a limit on the area of the diode. In order to overcome this problem, a microlens is formed on the unit pixel to collect light incident to a region other than the photodiode region of the light incident on the unit pixel. As such, the light collecting speed of the image sensor may be improved by forming the microlens.
즉, 광소자에서 마이크로 렌즈의 역할은 광다이오드 영역에 많은 광량이 집속될 수 있도록 하는 것이다. 종래 감광막을 이용한 마이크로 렌즈 형성 공정에서는 그 이전에 형성된 칼라필터의 단차에 의해 렌즈의 두께가 달라지는 것을 방지하기 위해 마이크로 렌즈 형성 이전에 평탄화용 감광막을 형성한다. 또한, 마이크로 랜즈 형성 공정 이후 소자에 유입되는 결함(defect)의 효율적인 제거를 위해 저온에서 산화막을 증착하여 사용하고 있다.That is, the role of the micro lens in the optical device is to allow a large amount of light to be concentrated in the photodiode region. In the conventional microlens forming process using a photosensitive film, a flattening photosensitive film is formed before microlens formation in order to prevent the thickness of the lens from being changed by the step of the color filter formed before. In addition, in order to efficiently remove defects introduced into the device after the microlens forming process, an oxide film is deposited at a low temperature.
도 2는 종래 이미지 센서 단위 픽셀 내부의 포토다이오드, 칼라필터 및 마이크로 렌즈를 보이는 단면도로서, 포토다이오드(21), 금속배선(도시하지 않음) 등을 포함한 하부구조 형성이 완료된 반도체 기판(20) 상에 층간절연막(22)을 형성하고, 상기 층간절연막(22) 상에 칼라필터(R, G, B)를 형성하고, 평탄화층(24)을 형성한 다음, 평탄화층(24) 상에 빛을 모으기 위한 마이크로 렌즈(25)를 형성하고, 소자에 결함이 유입되는 것을 방지하기 위한 산화막(26)을 형성한 것을 보이고 있다.FIG. 2 is a cross-sectional view illustrating a photodiode, a color filter, and a micro lens inside a pixel of a conventional image sensor unit, and a semiconductor substrate 20 on which a substructure including a photodiode 21, a metal wiring (not shown), and the like are completed. An interlayer insulating film 22 is formed on the interlayer insulating film 22, color filters R, G, and B are formed on the interlayer insulating film 22, the planarization layer 24 is formed, and then light is applied on the planarization layer 24. It has been shown that the microlens 25 for collecting is formed and the oxide film 26 for preventing defects from flowing into the device is formed.
종래 이미지 센서 제조 공정에서 칼라필터(R, G, B) 형성시 각각의 색 필터를 형성하면서 이전에 형성된 색필터에 의해 형성 순서에 따라서 단차가 발생하게 된다. 단차가 발생된 상태에서 바로 렌즈를 형성하면 각 색 필터 위에 렌즈 두께가 달라져 렌즈 플로우 공정 후 그 크기가 달라지게 된다. 이를 방지하기 위해서 전술한 종래 제조 방법과 같이 칼라필터(R, G, B) 형성이 완료된 상태에서 감광막으로 평탄화층(24)을 형성한 다음 마이크로 렌즈(25)를 형성한다. 그러나 평탄화층(24)을 이루는 감광막은 후속 열공정에 의해 변형될 우려가 있고, 공정 마지막 단계에서 진행되는 패드(pad) 식각시 노출되면 습식식각에 의해 손상되어 소자의 불량원인이 되기도 한다.In the conventional image sensor manufacturing process, when the color filters R, G, and B are formed, steps are generated in the order of formation by the previously formed color filters while forming the respective color filters. If the lens is formed immediately in the stepped state, the lens thickness is changed on each color filter, and the size thereof is changed after the lens flow process. In order to prevent this, the flattening layer 24 is formed of the photosensitive film in the state where the color filters R, G, and B are formed as in the conventional manufacturing method described above, and then the microlenses 25 are formed. However, the photoresist layer forming the planarization layer 24 may be deformed by a subsequent thermal process, and may be damaged by wet etching when exposed during the pad etching performed in the last step of the process, resulting in a failure of the device.
상기와 같은 문제점을 해결하기 위한 본 발명은, 후속 열공정에 안정하며 노출시 상대적으로 손상이 적은 물질로 이루어지는 평탄화층을 구비하는 이미지 센서 및 그 제조 방법을 제공하는데 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made in an effort to provide an image sensor and a method for manufacturing the same, which include a planarization layer made of a material that is stable to subsequent thermal processes and has relatively little damage upon exposure.
도 1은 종래 기술에 따른 CMOS 이미지 센서의 단위픽셀 구조를 개략적으로 보이는 단면도,1 is a cross-sectional view schematically showing a unit pixel structure of a conventional CMOS image sensor;
도 2는 종래 이미지 센서 단위픽셀 내부의 포토다이오드, 칼라필터 및 마이크로 렌즈 및 저온산화막을 보이는 단면도,2 is a cross-sectional view showing a photodiode, a color filter, a micro lens, and a low temperature oxide film inside a pixel unit of a conventional image sensor;
도 3a 내지 도 3d는 본 발명의 일실시예에 따른 이미지 센서 제조 공정 단면도.3A to 3D are cross-sectional views of an image sensor manufacturing process according to an embodiment of the present invention.
*도면의 주요부분에 대한 도면 부호의 설명** Description of reference numerals for the main parts of the drawings *
31: 포토다이오드 R, G, B: 칼라필터31: photodiode R, G, B: color filter
34: 제1 산화막 34a: 제1 산화막 패턴34: first oxide film 34a: first oxide film pattern
35: 제2 산화막 35a: 산화막 스페이서35 second oxide film 35a oxide film spacer
상기와 같은 목적을 달성하기 위한 본 발명은, 광감지 수단; 상기 광감지 수단 상부에 형성된 칼라필터; 및 상기 칼라필터 상에 형성된 제1 산화막 패턴 및 상기 산화막 패턴 측벽에 형성된 산화막 스페이서로 이루어지는 집광수단을 포함하는이미지 센서를 제공한다.The present invention for achieving the above object, the optical sensing means; A color filter formed on the light sensing means; And a light collecting means comprising a first oxide film pattern formed on the color filter and an oxide film spacer formed on sidewalls of the oxide film pattern.
또한 상기 목적을 달성하기 위한 본 발명은, 수광수단을 포함한 하부구조 형성이 완료된 반도체 기판 상에 층간절연막을 형성하는 단계; 상기 층간절연막 상에 적어도 일색의 칼라필터를 형성하는 단계; 상기 칼라필터 상에 산화막 패턴을 형성하는 단계; 및 상기 산화막 패턴 측벽에 산화막 스페이서를 형성하여, 상기 산화막 패턴 및 상기 산화막 스페이서로 이루어지는 마이크로 렌즈를 형성하는 단계를 포함하는 이미지 센서 제조 방법을 제공한다.In addition, the present invention for achieving the above object, the step of forming an interlayer insulating film on a semiconductor substrate is completed the formation of a lower structure including a light receiving means; Forming a color filter of at least one color on the interlayer insulating film; Forming an oxide film pattern on the color filter; And forming an oxide spacer on sidewalls of the oxide layer pattern to form a microlens including the oxide layer pattern and the oxide layer spacers.
상기 산화막 패턴을 형성하는 단계는, 상기 칼라필터 형성이 완료된 전체 구조 상에 140 ℃ 내지 220 ℃의 온도에서 제1 산화막을 형성하는 단계; 및 마이크로 렌즈 형성용 마스크를 이용하여 상기 제1 산화막을 선택적으로 식각해서 상기 칼라필터 보다 면적이 작은 상기 산화막 패턴을 형성하면서, 상기 제1 산화막의 일부를 상기 칼라필터 상에 잔류시키는 단계를 포함한다.The forming of the oxide film pattern may include: forming a first oxide film at a temperature of 140 ° C. to 220 ° C. on the entire structure of the color filter formation; And selectively etching the first oxide film using a microlens forming mask to form a portion of the first oxide film on the color filter while forming the oxide pattern having a smaller area than the color filter. .
본 발명은 종래 감광막을 이용한 마이크로 렌즈 형성과 달리 산화막을 이용하여 마이크로 렌즈를 형성함으로써 칼라필터 형성에 따라 유발되는 단차의 영향을 감소시킬 수 있다.The present invention can reduce the influence of the step caused by the color filter formed by forming a micro lens using the oxide film, unlike the conventional micro lens formed using the photosensitive film.
이하, 도 3a 내지 도 3d를 참조하여 본 발명의 실시예에 따른 이미지 센서 제조 방법을 상세하게 설명한다.Hereinafter, a method of manufacturing an image sensor according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 3A to 3D.
먼저 도 3a에 도시한 바와 같이, 포토다이오드(31)를 포함한 하부구조 형성이 완료된 반도체 기판(30) 상에 층간절연막(32)을 형성하고, 상기 층간절연막(32) 상에 칼라필터(R, G, B)를 형성하고, 전체 구조 상에 제1 산화막(34)을 형성한다.First, as shown in FIG. 3A, an interlayer insulating film 32 is formed on a semiconductor substrate 30 on which a substructure including a photodiode 31 is completed, and a color filter R is formed on the interlayer insulating film 32. G and B) are formed, and a first oxide film 34 is formed over the entire structure.
상기 칼라필터(R, G, B)는 제1 색 칼라필터의 예로서 블루 칼라필터(B)를 형성하고, 제2 색 칼라필터 예로서 레드 칼라필터(R)를 형성한 다음, 제3 색 칼라필터의 예로서 그린 칼라필터(G)를 형성한다.The color filters R, G, and B form a blue color filter B as an example of the first color color filter, form a red color filter R as the second color color filter, and then form a third color. As an example of the color filter, the green color filter G is formed.
다음으로 도 3b에 보이는 바와 같이, 마이크로 렌즈 형성용 마스크를 이용하여 제1 산화막(34)을 선택적으로 식각해서 상기 칼라필터(R, G, B) 보다 면적이 작은 제1 산화막 패턴(34a)을 형성하면서, 그 하부의 칼라필터(R, G, B)가 손상되는 것을 방지하기 위하여 산화막(34)의 일부를 각 칼라필터(R, G, B) 상에 잔류시킨다. 상기 제1 산화막 패턴(34a)은 포토다이오드 이외의 영역으로 유입되는 빛을 모으기 위한 것이므로 포토다이오드 내부로 입사되는 빛에 대해서는 집속을 위한 렌즈 형태를 만들지 않아도 된다.Next, as shown in FIG. 3B, the first oxide film 34 is selectively etched using a mask for forming a microlens to form the first oxide film pattern 34a having a smaller area than the color filters R, G, and B. While forming, a portion of the oxide film 34 is left on each of the color filters R, G, and B in order to prevent damage to the color filters R, G, and B underneath thereof. Since the first oxide layer pattern 34a collects light flowing into a region other than the photodiode, it is not necessary to form a lens for focusing on the light incident into the photodiode.
이어서 도 3c에 도시한 바와 같이, 전체 구조 상에 제2 산화막(35)을 형성한다.Subsequently, as shown in Fig. 3C, a second oxide film 35 is formed over the entire structure.
다음으로 상기 제2 산화막(35)을 전면식각하여 도 3d에 보이는 바와 같이, 제1 산화막 패턴(34a)을 측벽에 산화막 스페이서(35a)를 형성하여, 제1 산화막 패턴(34a) 및 산화막 스페이서(35a)로 이루어지는 마이크로 렌즈를 형성한다.Next, as shown in FIG. 3D, the second oxide film 35 is etched over the entire surface, so that the oxide film spacer 35a is formed on the sidewall of the first oxide film pattern 34a to form the first oxide film pattern 34a and the oxide film spacer ( A micro lens consisting of 35a) is formed.
전술한 본 발명의 실시예에서 상기 제1 산화막 및 상기 제2 산화막 각각은 140 ℃ 내지 220 ℃ 온도에서 형성한다.In the above-described embodiment of the present invention, each of the first oxide film and the second oxide film is formed at a temperature of 140 ° C to 220 ° C.
이상에서 설명한 본 발명은 전술한 실시예 및 첨부된 도면에 의해 한정되는것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것이 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes can be made in the art without departing from the technical spirit of the present invention. It will be clear to those of ordinary knowledge.
상기와 같이 이루어지는 본 발명은 산화막으로 마이크로 렌즈를 형성함으로써 이미지 센서의 제조 공정을 단순화시키고 경제적인 이득 및 소자의 불량 요인을 감소시킬 수 있다.According to the present invention made as described above, by forming a microlens with an oxide film, it is possible to simplify the manufacturing process of the image sensor and to reduce economic gain and element defects.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100649023B1 (en) * | 2004-11-09 | 2006-11-28 | 동부일렉트로닉스 주식회사 | Manufacturing Method of CMOS Image Sensor |
| KR100727267B1 (en) * | 2005-12-29 | 2007-06-11 | 동부일렉트로닉스 주식회사 | Image element with micro lens and manufacturing method thereof |
| KR100766258B1 (en) * | 2006-08-18 | 2007-10-12 | 동부일렉트로닉스 주식회사 | Method of manufacturing CMOS image sensor |
| EP2840614A1 (en) * | 2013-08-23 | 2015-02-25 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Photodiode with high quantum efficiency |
| US9299865B2 (en) | 2013-08-23 | 2016-03-29 | STMicroelectronics (Crolles 2) SAS; STMicroelectronics SA | Spad photodiode of high quantum efficiency |
Families Citing this family (2)
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| KR100915753B1 (en) * | 2007-11-05 | 2009-09-04 | 주식회사 동부하이텍 | Image Sensor and Method for Manufacturing thereof |
| KR102160237B1 (en) * | 2014-03-19 | 2020-09-28 | 에스케이하이닉스 주식회사 | image sensor having micro lens |
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| JPH05335533A (en) * | 1992-05-27 | 1993-12-17 | Olympus Optical Co Ltd | Method of manufacturing solid-state imaging device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100649023B1 (en) * | 2004-11-09 | 2006-11-28 | 동부일렉트로닉스 주식회사 | Manufacturing Method of CMOS Image Sensor |
| US7723151B2 (en) | 2004-11-09 | 2010-05-25 | Dongbu Electronics Co., Ltd. | CMOS image sensor and method for fabricating the same |
| KR100727267B1 (en) * | 2005-12-29 | 2007-06-11 | 동부일렉트로닉스 주식회사 | Image element with micro lens and manufacturing method thereof |
| KR100766258B1 (en) * | 2006-08-18 | 2007-10-12 | 동부일렉트로닉스 주식회사 | Method of manufacturing CMOS image sensor |
| US7651884B2 (en) | 2006-08-18 | 2010-01-26 | Dongbu Hitek Co., Ltd. | Method of fabricating a CMOS image sensor with micro lenses formed in a wiring layer |
| EP2840614A1 (en) * | 2013-08-23 | 2015-02-25 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Photodiode with high quantum efficiency |
| FR3009889A1 (en) * | 2013-08-23 | 2015-02-27 | Commissariat Energie Atomique | QUANTUM HIGH PERFORMANCE PHOTODIODE |
| US9299865B2 (en) | 2013-08-23 | 2016-03-29 | STMicroelectronics (Crolles 2) SAS; STMicroelectronics SA | Spad photodiode of high quantum efficiency |
| US9450000B2 (en) | 2013-08-23 | 2016-09-20 | Stmicroelectronics (Crolles 2) Sas | Photodiode of high quantum efficiency |
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