KR20010066264A - Method cleaning Wafer using Laser - Google Patents
Method cleaning Wafer using Laser Download PDFInfo
- Publication number
- KR20010066264A KR20010066264A KR1019990067860A KR19990067860A KR20010066264A KR 20010066264 A KR20010066264 A KR 20010066264A KR 1019990067860 A KR1019990067860 A KR 1019990067860A KR 19990067860 A KR19990067860 A KR 19990067860A KR 20010066264 A KR20010066264 A KR 20010066264A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- cleaning
- laser
- chemicals
- contaminants
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000000356 contaminant Substances 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000011261 inert gas Substances 0.000 claims abstract description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 2
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 4
- 238000001311 chemical methods and process Methods 0.000 abstract description 3
- 238000009428 plumbing Methods 0.000 abstract description 3
- 238000003860 storage Methods 0.000 abstract description 3
- 238000005507 spraying Methods 0.000 abstract description 2
- 238000003912 environmental pollution Methods 0.000 abstract 1
- 239000002351 wastewater Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 41
- 239000002245 particle Substances 0.000 description 6
- 238000004065 wastewater treatment Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000012855 volatile organic compound Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 발명은 반도체 웨이퍼 처리 공정 중 웨이퍼를 세정하는 공정에 있어서, 웨이퍼를 세정 공간으로 자동 이송시키는 단계와, 상기 이송된 웨이퍼에 레이저를 방사하여 웨이퍼에 흡착된 오염물질을 분리시키는 단계, 및 상기 분리된 오염물질에 불활성가스를 분사하여 외부로 토출시키는 단계를 수행하여 세정함으로써, 본 발명에서는 기존과는 다르게 반도체 제조공정 중 세정공정에서 순수와 화학약품을 사용하지 않으므로, 화학약품의 구매 비용과 폐수처리 비용을 없애 원가를 절감할 수 있을 뿐만 아니라 유해물질 배출로 인한 환경오염을 원천적으로 방지할 수 있고, 아울러 화학공정을 위한 저장조 및 배관 설비가 필요없어 작업 공간을 혁신적으로 축소시킬 수 있는 레이저를 이용한 웨이퍼 세정 방법에 관한 것이다.According to an aspect of the present invention, there is provided a method of cleaning a wafer during a semiconductor wafer processing process, the method comprising: automatically transferring a wafer to a cleaning space, separating a contaminant adsorbed on the wafer by radiating a laser beam to the transferred wafer, and separating the wafer. In the present invention, since pure water and chemicals are not used in the cleaning process of the semiconductor manufacturing process unlike the conventional process, since the inert gas is injected to the outside by spraying the inert gas on the polluted material, the purchase cost of chemicals and wastewater In addition to saving costs by eliminating disposal costs, the company also prevents environmental pollution due to the emission of harmful substances and eliminates the need for storage tanks and plumbing equipment for chemical processes. It relates to the used wafer cleaning method.
Description
본 발명은 웨이퍼의 세정 방법에 관한 것으로서, 특히 반도체 제조 공정 중 웨이퍼처리공정에서 각 공정을 수행한 후 웨이퍼의 불량률을 줄이기 위하여 웨이퍼에 흡착된 오염물질을 제거하게 되는 데, 이 공정을 레이저와 질소가스를 이용하여 세정함으로써, 세정 장비의 단순화와 세정 비용의 감소 및 세정 소요시간의 단축 등을 이룰 수 있는 레이저를 이용한 웨이퍼 세정 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a wafer, and in particular, to remove contaminants adsorbed on a wafer in order to reduce a defect rate of a wafer after performing each process in a wafer processing process of a semiconductor manufacturing process. The present invention relates to a wafer cleaning method using a laser, which can simplify cleaning equipment, reduce cleaning costs, and shorten cleaning time by cleaning with gas.
반도체 제조 공정 중 웨이퍼를 처리하는 각 공정에서 입자, 유기물, 중금속 및 이온성 불순물 등의 오염물질이 웨이퍼 표면에 흡착되고, 이 오염물질로 인하여 웨이퍼 칩의 불량이 발생되므로 각 공정 후 오염물질을 제거하여야 한다.Contaminants such as particles, organics, heavy metals, and ionic impurities are adsorbed on the wafer surface in each process of processing wafers in the semiconductor manufacturing process, and defects in wafer chips are caused by these contaminants. shall.
웨이퍼 표면상에 흡착된 오염물질을 세정하는 방법으로는 크게 습식과 건식으로 분류할 수 있는 데, 현재 건식 세정은 오염물질을 충분히 제거할 수 없기 때문에 액체 및 기체 세정제의 화학작용으로 오염물질을 제거하는 습식 세정이 주류를 이루고 있다.The method of cleaning contaminants adsorbed on the wafer surface can be classified into wet and dry methods. Currently, dry cleaning can not remove the contaminants sufficiently. Wet cleaning is the mainstream.
상기 습식 세정은 웨이퍼가 여러 장 들어있는 캐리어를 반송 로봇이 순차적으로 이동해서 웨이퍼를 일괄적으로 약액(산 또는 암모니아)조나 수세조에 담그어 세척한 후 웨이퍼를 회전시켜 건조한다.In the wet cleaning, the carrier robot sequentially moves several carriers containing several wafers, soaks the wafers in a chemical solution (acid or ammonia) tank or a washing tank in a batch, and then rotates the wafers to dry them.
개략적으로 상기와 같이 세정하는 장비는 까다로운 조건하에서 작동되며, 로봇의 저발진성, 반송신뢰성, 고속성, 내약품성 등이 필요하며, 반송의 신뢰성이나 고속 반송을 위하여 고기능의 모터를 사용하고 있고, 내약품성에 대해서도 특수한 재질을 선택하여 불소수지에 의한 이중의 봉인(Seal) 등을 하고 있다.In general, the cleaning equipment as described above is operated under demanding conditions, and the robot needs low oscillation, transfer reliability, high speed, and chemical resistance, and a high-performance motor is used for the reliability of the transfer or the high-speed transfer. Special chemical materials are also selected for double sealing with fluorine resin.
웨이퍼를 세척할 때 약액을 사용하지 않고 물리적으로 세정하는 장비로는 통상, 스크루버(Scruber)라고 불리는 장비를 사용하는 데, 웨이퍼를 회전시키며 그 표면에 순수한 세정액을 분출하며 입자를 브러시로 세척하는 방식을 사용하기도 하며, 고압에서 순수를 분사하여 입자를 제거하는 방식을 사용하기도 하며, 고주파의 초음파를 발진시켜 그 진동력으로 입자를 떨어뜨리는 방식을 사용하기도 한다.In order to clean the wafer without the use of chemical liquids, it is generally used as a device called a scrubber, which rotates the wafer, sprays pure cleaning liquid onto the surface, and washes the particles with a brush. In some cases, a method of spraying pure water at a high pressure to remove particles may be used, or a method of dropping particles by vibrating force by oscillating high frequency ultrasonic waves.
따라서, 상기와 같은 종래의 웨이퍼 세정방식은, 반도체 웨이퍼에 있는 오염물질을 제거하기 위하여 순수나 화학물질을 사용하고 있는 바, 그 공정에 있어서 비효율적인 순수의 사용(2,000 gallon/Wafer)이나 화학물질을 사용함으로써, 다량의 VOC류(IPA, Acetone), 산류(불산, 황산), 솔벤트류가 발생 및 폐수처리 등의 문제를 야기할 수 있고, 공정의 복잡함에 따른 부수적인 비용이 많이 발생하는 문제점이 있었다.Therefore, in the conventional wafer cleaning method, pure water or chemicals are used to remove contaminants in the semiconductor wafer. Therefore, inefficient use of pure water (2,000 gallon / wafer) or chemicals is used in the process. By using this, a large amount of VOCs (IPA, Acetone), acids (fluoric acid, sulfuric acid), solvents may be generated, and problems such as wastewater treatment may occur, and an additional cost may arise due to the complexity of the process. There was this.
따라서, 본 발명의 목적은 반도체 제조 공정 중 웨이퍼처리공정에서 각 공정을 수행한 후 웨이퍼의 불량률을 줄이기 위하여 웨이퍼에 흡착된 오염물질을 제거하게 되는 데, 이 공정을 레이저와 질소가스를 이용하여 세정함으로써, 세정 장비의 단순화와 세정 비용의 감소 및 세정 소요시간의 단축 등을 이룰 수 있는 레이저를 이용한 웨이퍼 세정 방법을 제공하는 데 있다.Therefore, an object of the present invention is to remove the contaminants adsorbed on the wafer to reduce the defect rate of the wafer after performing each step in the wafer processing step of the semiconductor manufacturing process, this process is cleaned using a laser and nitrogen gas The present invention provides a wafer cleaning method using a laser that can simplify cleaning equipment, reduce cleaning costs, and shorten cleaning time.
상기 목적을 달성하기 위한 본 발명의 기술적 방법은, 반도체 웨이퍼 처리 공정 중 웨이퍼를 세정하는 공정에 있어서, 상기 웨이퍼를 세정 공간으로 자동 이송시키는 단계와; 상기 이송된 웨이퍼에 레이저를 방사하여 웨이퍼에 흡착된 오염물질을 분리시키는 단계; 및 상기 분리된 오염물질에 불활성가스를 분사하여 외부로 토출시켜 세정하는 단계를 구비하는 것을 특징으로 한다.The technical method of the present invention for achieving the above object comprises the steps of cleaning the wafer during the semiconductor wafer processing process, the step of automatically transferring the wafer to the cleaning space; Radiating a laser onto the transferred wafer to separate contaminants adsorbed on the wafer; And injecting an inert gas to the separated contaminants and discharging them to the outside for cleaning.
본 발명은 화학물질을 대체할 수 있는 청정 공정으로서, 종래기술에서 언급한 화학 물질의 발생 및 폐수처리 등을 원천적으로 제거할 수 있을 뿐만 아니라 기존의 오염물질 제거를 위한 다단계 처리 공정을 한 단계의 공정으로 줄일 수 있고, 화학물질을 제거하는 공정에서 발생하는 물질을 통한 오염 자체를 방지할 수 있는 것이다.The present invention is a clean process that can replace chemicals, not only can eliminate the generation of chemicals and wastewater treatment mentioned in the prior art, but also a multi-stage treatment process for removing existing pollutants It can be reduced to a process, and it is possible to prevent contamination itself through substances generated in the process of removing chemicals.
반도체 웨이퍼에 포토 레지스터를 도포하거나 현상, 식각 및 전극을 형성하는 각 공정을 실시한 후에 웨이퍼를 세정하는 공정을 실행하게 되는 데, 상술한 바와 같이 종래에는 순수나 화학물질 및 브러시를 이용하여 웨이퍼에 흡착된 오염물질을 제거하는 데 반해, 본 발명은 웨이퍼에 레이저를 방사하여 정전기로 인해 결합된 오염물질을 웨이퍼 상에서 분리시킨 후 강한 질소가스 등의 불활성 가스를 노즐을 통해 분출하여 세정하게 된다.After the photoresist is applied to the semiconductor wafer, or each step of developing, etching, and forming the electrode is performed, the wafer is cleaned. As described above, the wafer is conventionally adsorbed onto the wafer using pure water, chemicals, and a brush. In contrast to removing the contaminants, the present invention radiates a laser onto the wafer to separate the contaminants bound by static electricity on the wafer, and then inert gas such as strong nitrogen gas is blown out through the nozzle to clean the contaminants.
아울러, 레이저의 다양한 파장과 주파수를 이용하면 특정 오염물질에 대해 선택적으로 제거할 수 있어 한 가지 공정으로도 모든 오염물질을 제거할 수 있는 것이다.In addition, various wavelengths and frequencies of the laser can be used to selectively remove specific contaminants, eliminating all contaminants in one process.
웨이퍼에 흡착된 입자(Particle), 유기물(Organics) 및 이온성 불순물(CMP slurry) 등을 제거할 때 웨이퍼상의 전자회로의 손상이 없어야 하고, 반도체 공정에 적합한 레이저 파장을 이용하여야 한다.When removing particles, organics, and ionic impurities (CMP slurry) adsorbed on a wafer, there should be no damage to electronic circuits on the wafer, and a laser wavelength suitable for a semiconductor process should be used.
또한, 레이저는 웨이퍼의 특정 부분(오염물질이 흡착된 부분)에만 방사하는 것이 아니라 웨이퍼의 전체 면으로 방사하여 정전기에 의해 결합된 이물질을 웨이퍼로부터 분리시킨 후 강한 질소가스를 웨이퍼 전면에 분출하여 이물질을 외부로 토출시킨다.In addition, the laser not only radiates to a specific part of the wafer (where the pollutant is adsorbed), but also radiates to the entire surface of the wafer to separate foreign matter bound by static electricity from the wafer, and then ejects strong nitrogen gas to the entire surface of the wafer. Discharge to the outside.
이물질에 레이저를 방사하면 레이저의 열에 의해 일시적으로 정전기 현상이 제거되며, 따라서 이물질이 웨이퍼에서 분리되는 것이다.When the laser is emitted to the foreign material, the static electricity is temporarily removed by the heat of the laser, and thus the foreign material is separated from the wafer.
상기와 같이 레이저를 이용하면 제거할 수 있는 최소 입자의 크기가 0.09㎛까지 가능하고, 세정시간은 장당 15초(15sec/장) 이내에 가능하여 분당 웨이퍼의 세척량을 늘일 수 있고, 레이저 파장은 248㎚를 사용하는 것이 가장 바람직하며, 세정 대상 오염물질에 따라 불화 아르곤 엑사이머(ArF Excimer) 레이저를 이용하거나 불화 크립톤 엑사이머(KrF Excimer) 레이저를 이용할 수 있다.Using the laser as described above, the minimum particle size that can be removed is up to 0.09㎛, the cleaning time is possible within 15 seconds (15sec / sheet) per sheet to increase the amount of cleaning of the wafer per minute, the laser wavelength is 248 It is most preferred to use nm, and depending on the contaminants to be cleaned, an argon fluoride excimer (ArF Excimer) laser or a KrF fluoride excimer (KrF Excimer) laser may be used.
상기와 같은 방법으로 웨이퍼를 세정하면, 화학공정을 위한 저장조 및 배관설비가 필요없어 세정 공간의 70% 정도나 감소하는 것이 가능하고, 기본 작업 공간의 50% 정도나 줄일 수 있어 작업공간을 혁신적으로 축소시킬 수 있다.By cleaning the wafer in this way, it is possible to reduce about 70% of the cleaning space and to reduce about 50% of the basic working space by eliminating the need for a storage tank and plumbing equipment for chemical processes. Can be reduced.
또한, 기존 세정에 필요한 순수와 화학물질의 미사용으로 인해 생산원가 뿐만 아니라 폐수 처리 등의 환경정화 비용을 절감하여 가격에 있어 경쟁력있는 상품을 생산할 수 있는 것이다.In addition, due to the non-use of pure water and chemicals required for the existing cleaning, it is possible to produce a competitive product in terms of cost by reducing the production cost as well as environmental purification costs such as wastewater treatment.
따라서, 본 발명에서는 기존과는 다르게 반도체 제조공정 중 세정공정에서 순수와 화학약품을 사용하지 않으므로, 화학약품의 구매 비용과 폐수처리 비용을 없애 원가를 절감할 수 있을 뿐만 아니라 유해물질 배출로 인한 환경오염을 원천적으로 방지할 수 있는 효과가 있다.Therefore, in the present invention, since pure water and chemicals are not used in the cleaning process of the semiconductor manufacturing process unlike the conventional method, it is possible to reduce the cost by eliminating the purchase cost of chemicals and the waste water treatment cost, as well as the environment due to the discharge of harmful substances. There is an effect that can prevent the source of contamination.
또한, 화학공정을 위한 저장조 및 배관 설비가 필요없어 작업 공간을 혁신적으로 축소시킬 수 있어 일정 공간내 작업 생산량을 늘일 수 있는 효과가 있다.In addition, there is no need for a storage tank and a plumbing facility for a chemical process, and thus the work space can be innovatively reduced, thereby increasing the work yield in a certain space.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990067860A KR20010066264A (en) | 1999-12-31 | 1999-12-31 | Method cleaning Wafer using Laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990067860A KR20010066264A (en) | 1999-12-31 | 1999-12-31 | Method cleaning Wafer using Laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20010066264A true KR20010066264A (en) | 2001-07-11 |
Family
ID=19634950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019990067860A KR20010066264A (en) | 1999-12-31 | 1999-12-31 | Method cleaning Wafer using Laser |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20010066264A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100432854B1 (en) * | 2001-07-31 | 2004-05-24 | 주식회사 한택 | Method for Cleaning a Surface of Semiconductor Device Using Laser |
| KR100778389B1 (en) * | 2006-02-14 | 2007-11-21 | 한국과학기술원 | Optically transparent substrate contaminant cleaning apparatus and method using laser |
| KR100821822B1 (en) * | 2007-04-20 | 2008-04-14 | 동부일렉트로닉스 주식회사 | Method for Cleaning Pad TEOS Film Surface by Laser Annealing |
-
1999
- 1999-12-31 KR KR1019990067860A patent/KR20010066264A/en not_active Application Discontinuation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100432854B1 (en) * | 2001-07-31 | 2004-05-24 | 주식회사 한택 | Method for Cleaning a Surface of Semiconductor Device Using Laser |
| KR100778389B1 (en) * | 2006-02-14 | 2007-11-21 | 한국과학기술원 | Optically transparent substrate contaminant cleaning apparatus and method using laser |
| KR100821822B1 (en) * | 2007-04-20 | 2008-04-14 | 동부일렉트로닉스 주식회사 | Method for Cleaning Pad TEOS Film Surface by Laser Annealing |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20020000201A (en) | Method cleaning Liquid Chrystal Display using Laser and Vapor Phase | |
| KR100806476B1 (en) | Apparatus for Removing Organic Films | |
| US6209553B1 (en) | Method of and apparatus for washing photomask and washing solution for photomask | |
| JPH1027771A (en) | Cleaning method and device | |
| KR20130131348A (en) | Integrated substrate cleaning system and method | |
| JP3380021B2 (en) | Cleaning method | |
| CN115228835A (en) | Wafer Cleaning Methods | |
| KR20010066264A (en) | Method cleaning Wafer using Laser | |
| KR100765900B1 (en) | Substrate edge etching apparatus and substrate processing equipment comprising the apparatus, and substrate processing method | |
| KR20020003411A (en) | Method cleaning Wafer using Laser and Remote Plasma | |
| KR20020000193A (en) | Method cleaning Electronic Parts and PCB using Laser and HCl Annealing | |
| KR20020003407A (en) | Method cleaning Field Emittor Display using Laser | |
| JP2004296463A (en) | Cleaning method and cleaning device | |
| KR20020000188A (en) | Method cleaning Electronic Parts and PCB using Laser and Ar ECR Plasma | |
| KR20020000206A (en) | Method cleaning Liquid Chrystal Display using Laser and Remote Plasma | |
| KR20020000203A (en) | Method cleaning Electronic Parts and PCB using Laser and Remote Plasma | |
| KR20020003410A (en) | Method cleaning Wafer using Laser and Vapor Phase | |
| KR20020003408A (en) | Method cleaning Liquid Chrystal Display using Laser | |
| KR20020003412A (en) | Method cleaning Wafer using Laser and Ar ECR Plasma | |
| KR20010114115A (en) | Method cleaning Electronic Parts and PCB using Laser | |
| KR20020003405A (en) | Method cleaning Wafer using Laser and HCl Annealing | |
| KR20020000200A (en) | Method cleaning Field Emittor Display using Laser and Vapor Phase | |
| KR20080081068A (en) | Manufacturing method of electronic device | |
| KR102700404B1 (en) | Spin cleaning method of semiconductor lithography photo mask using ozone water | |
| KR20020000196A (en) | Method cleaning Liquid Chrystal Display using Laser and HCl Annealing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19991231 |
|
| PA0201 | Request for examination | ||
| N231 | Notification of change of applicant | ||
| PN2301 | Change of applicant |
Patent event date: 20000418 Comment text: Notification of Change of Applicant Patent event code: PN23011R01D |
|
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20020114 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20020410 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20020114 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |