KR20010010365A - Phase change optical disc - Google Patents
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- KR20010010365A KR20010010365A KR1019990029212A KR19990029212A KR20010010365A KR 20010010365 A KR20010010365 A KR 20010010365A KR 1019990029212 A KR1019990029212 A KR 1019990029212A KR 19990029212 A KR19990029212 A KR 19990029212A KR 20010010365 A KR20010010365 A KR 20010010365A
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
- G11B7/0045—Recording
- G11B7/00454—Recording involving phase-change effects
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/2403—Layers; Shape, structure or physical properties thereof
- G11B7/24062—Reflective layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/2585—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on aluminium
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25713—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing nitrogen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
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- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B2220/00—Record carriers by type
- G11B2220/20—Disc-shaped record carriers
- G11B2220/25—Disc-shaped record carriers characterised in that the disc is based on a specific recording technology
- G11B2220/2537—Optical discs
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
본 발명은 상변화형 광디스크에 관한 것으로, 보다 상세하게는 기록과 소거가 자유로와 중첩기록이 가능한 상변화형 광디스크로서, 내부식성, 반복기록 내구성, 크로스 소거 특성 및 중첩기록 특성이 개선된 상변화형 광디스크에 관한 것이다.The present invention relates to a phase change type optical disc, and more particularly, to a phase change type optical disc capable of freely recording and erasing and overlapping recording. Relates to a fluorescent disk.
일반적인 광 디스크는 주로 도 1에 나타낸 바와 같은 원반형 구조를 지니는데, 여기서 (1)은 디스크의 정보영역을 나타낸다. 광디스크의 기판(10)상에는 도 2에 나타낸 바와 같이 디지털 정보를 이루는 마크인 피트(11)가 트랙상에 마치 모르스 부호처럼 형성되어 있으며, 그 위에 레이저 빔을 반사시키는 반사층(12)과 보호층(13)이 차례로 형성되어 있다.A typical optical disk has a disk structure as shown mainly in Fig. 1, where (1) represents the information area of the disk. On the substrate 10 of the optical disc, as shown in Fig. 2, a pit 11, which is a mark for digital information, is formed on the track like a Morse code, and the reflective layer 12 and the protective layer 13 reflecting the laser beam thereon. ) Are formed one after the other.
상술한 바와 같은 광디스크를 제조하는 공정은 크게 스탬퍼(stamper)를 제조하는 단계와 제작된 스탬퍼에 의하여 투명수지 기판을 대량으로 복제하는 단계 및 여기에 반사층과 같은 박막을 성막하는 단계로 이루어진다. 스탬퍼는 먼저 광 디스크와 동일한 포맷을 갖는 유리 마스터를 제조한 후, 그 위에 Ni를 도금하여 제조된다. 이러한 방법으로 생산된 광 디스크는 기록층의 기록 내용을 단순히 읽을 수만 있는 재생 전용형(ROM: read only memory)이다.The process of manufacturing the optical disk as described above is largely composed of the step of manufacturing a stamper (stamper), the step of replicating the transparent resin substrate in a large amount by the manufactured stamper and the step of forming a thin film such as a reflective layer thereon. The stamper is made by first producing a glass master having the same format as the optical disk, and then plating Ni thereon. The optical disc produced in this way is a read only memory (ROM) which can only read the recorded contents of the recording layer.
한편, CD-ROM 등이 급속하게 보급됨에 따라, 동영상, 스틸 이미지, 애니메이션을 포함하는 멀티미디어 관련 소프트웨어 프로그램이 빠른 속도로 확산되고 있다. 따라서, 이러한 프로그램을 효과적으로 이용하기 위한 기록 및 재생가능한 기록매체가 절실히 요구되고 있는 실정이다. 이에 따라 소거 및 재기록이 가능한 서환형 광디스크(예: CD-RW(Compact Disc Rewritable))가 개발되었는데, 기록층 재료로서 광자기 재료를 이용한 광자기 디스크, 상변화 재료를 이용한 상변화형 광디스크 등이 있다. 이 중에서, 상변화형 광디스크는 그 재생 원리가 기존의 CD와 흡사하다.On the other hand, with the rapid spread of CD-ROM and the like, multimedia-related software programs including moving pictures, still images, and animations are rapidly spreading. Therefore, there is an urgent need for recording and reproducible recording media for effectively using such programs. Accordingly, a slow-circuit type optical disc capable of erasing and rewriting (e.g., CD-RW (Compact Disc Rewritable)) has been developed. As a recording layer material, an optical magnetic disk using a magneto-optical material and a phase change optical disk using a phase change material have. Among these, the phase change type optical disc has a reproduction principle similar to that of a conventional CD.
상변화형 광디스크는 기록층을 이루는 재료에 대한 가열온도 및 냉각 속도를 제어하여 결정질 구조와 비정질 구조 사이의 가역적인 변화를 유도함으로써 정보가 기록 및 소거되는 원리를 이용하는 것이다. 종래의 상변화형 광디스크는 도 3에 도시된 바와 같이 일반적으로 투명기판(20)상에 제 1 유전체층(21), 기록층(22), 제 2 유전체층(23), 반사층(24), 보호층(25)이 순차적으로 적층되어 있는 구조를 갖는다. 여기에서, 기록층에는 기록 신호가 만들어지는 트랙이 형성되어 있어, 레이저 빔을 조사하면, 기록층이 결정질에서 비정질로, 또는 비정질에서 결정질로 가역 변화되어 기록과 소거가 반복되는 것이다.The phase change type optical disc uses the principle that information is recorded and erased by controlling the heating temperature and the cooling rate of the material forming the recording layer to induce a reversible change between the crystalline structure and the amorphous structure. Conventional phase change type optical discs generally have a first dielectric layer 21, a recording layer 22, a second dielectric layer 23, a reflective layer 24, and a protective layer on a transparent substrate 20 as shown in FIG. 3. It has a structure in which 25 is sequentially stacked. Here, a track in which a recording signal is made is formed in the recording layer. When the laser beam is irradiated, the recording layer is reversibly changed from crystalline to amorphous or from amorphous to crystalline to repeat recording and erasing.
이러한 상변화형 광디스크는 다른 기록 방식을 이용하는 광 디스크에 비하여 중첩기록이 용이하며, 광디스크의 기록 밀도를 증가시키는 레이저 광의 단파장화가 가능할 뿐 아니라, 구동 드라이브의 광학계가 간단하기 때문에 DVD-RAM (Digital Video Disk Random Access Memory)과 같은 차세대 고밀도 서환형 광디스크에 채용될 수 있다.This phase change type optical disk is easier to superimpose recording than other optical disks using other recording methods, shortens the wavelength of the laser light to increase the recording density of the optical disk, and also because the optical system of the drive drive is simple, DVD-RAM (Digital Video) Disk random access memory).
상변화형 광디스크 개발의 예로서, PCT 특허출원 공개공보 제WO97/34298호에서는 기록층과 그 하부의 ZnS-SiO2유전체층 사이에 GeN 유전체 삽입층을 추가로 형성시켜 하부 유전체 층을 이루는 ZnS-SiO2의 구성원소인 황이 기록층으로 확산되는 현상을 억제하고, 기록층 상부의 유전체층에 GeN을 사용함으로써 기록층의 결정화를 촉진시킨 것을 개시하고 있으나, 이 경우 내부식성 및 반복기록 내구성이 현저히 저하되는 문제점이 있다.As an example of the development of a phase change type optical disk, PCT Patent Application Publication No. WO97 / 34298 discloses a ZnS-SiO forming a lower dielectric layer by further forming a GeN dielectric insertion layer between a recording layer and a ZnS-SiO 2 dielectric layer underneath. It is disclosed that sulfur, which is a member of 2 , is suppressed from being diffused into the recording layer, and the crystallization of the recording layer is promoted by using GeN in the dielectric layer on the recording layer. However, in this case, corrosion resistance and repeated recording durability are significantly reduced. There is this.
따라서, 본 발명의 목적은 상기 문제점을 해결하기 위하여 하부 유전체 층을 이중층으로 형성시키고, 상부 유전체 층과 반사층 사이에 내부식성 삽입층을 도입함으로써 내부식성, 중첩기록특성, 크로스 소거 특성 및 반복기록 내구성이 모두 향상된 상변화형 광 디스크를 제공하는 것이다.Accordingly, an object of the present invention is to form a lower dielectric layer into a double layer in order to solve the above problems, and to introduce a corrosion resistant insertion layer between the upper dielectric layer and the reflective layer, thereby providing corrosion resistance, superimposed recording characteristics, cross erasing characteristics, and repeatable recording durability. All of these provide an improved phase change type optical disk.
도 1은 일반적인 광디스크의 정보 영역을 개략적으로 나타낸 도면이고,1 is a view schematically showing an information area of a general optical disc,
도 2는 도 1의 선 A-A'를 따라 취한 확대 단면도이고,FIG. 2 is an enlarged cross-sectional view taken along the line A-A 'of FIG. 1,
도 3은 일반적인 상변화형 광디스크의 개략적인 단면도이고,3 is a schematic cross-sectional view of a general phase change type optical disk,
도 4는 본 발명의 상변화형 광디스크의 개략적인 단면도이고,4 is a schematic cross-sectional view of a phase change optical disk of the present invention;
도 5는 실시예 1 및 비교예 1에 따라 제조된 상변화형 광다스크의 기록 특성을 나타낸 그래프이며,5 is a graph showing the recording characteristics of the phase change type optical disks prepared according to Example 1 and Comparative Example 1,
도 6은 비교예 1, 6 및 7에 따라 제조된 상변화형 광다스크의 기록 특성을 나타낸 그래프이다.FIG. 6 is a graph showing recording characteristics of phase change type optical disks prepared according to Comparative Examples 1, 6, and 7. FIG.
*〈도면의 주요 부분에 대한 부호의 설명〉* <Explanation of symbols for main parts of drawing>
1:광디스크의 정보영역1: Information area of the optical disc
10:폴리카보네이트 기판 11:피트 12:반사층 13:보호막DESCRIPTION OF SYMBOLS 10 Polycarbonate substrate 11: Feet 12: Reflective layer 13: Protective film
20:기판 21: 제1유전체층 22:기록층20: substrate 21: first dielectric layer 22: recording layer
23:제2유전체층 24:반사층 25:보호막23: second dielectric layer 24: reflective layer 25: protective film
30:기판 31:제1 하부 유전체층 32:제2 하부 유전체층30: substrate 31: first lower dielectric layer 32: second lower dielectric layer
33:기록층 34:상부 유전체층 35:내부식성 삽입층33: recording layer 34: upper dielectric layer 35: corrosion resistant insertion layer
36:제1반사층 37:제2반사층 38:보호층36: first reflection layer 37: second reflection layer 38: protective layer
상기 목적에 따라, 본 발명에서는 투명기판 상에 순차적으로 형성된 하부 유전체층, 기록층, 상부 유전체층 및 반사층을 포함하는 상변화 광디스크에 있어서, 상기 하부 유전체층이 이중층 구조를 지니고, 상기 상부 유전체층과 반사층 사이에 내부식성 삽입층이 형성되어 있는 것을 특징으로 하는 상변화형 광디스크를 제공한다In accordance with the above object, in the present invention, in a phase change optical disk including a lower dielectric layer, a recording layer, an upper dielectric layer, and a reflective layer sequentially formed on a transparent substrate, the lower dielectric layer has a double layer structure and is disposed between the upper dielectric layer and the reflective layer. Provided is a phase change type optical disk, wherein the corrosion resistant insertion layer is formed.
이하 본 발명에 대하여 보다 상세히 설명한다.Hereinafter, the present invention will be described in more detail.
본 발명의 한 가지 태양에 따른 상변화형 광디스크는 도 4에 도시되어 있는 바와 같이, 투명기판(30)상에 제 1 하부 유전체층(31), 제 2 하부 유전체층(32), 기록층(33), 상부 유전체층(34), 내부식성 삽입층(35), 제1반사층(36), 제2반사층(37) 및 보호층(38)이 순차적으로 적층되어 있는 구조를 갖는다.As shown in FIG. 4, a phase change type optical disc according to an aspect of the present invention has a first lower dielectric layer 31, a second lower dielectric layer 32, and a recording layer 33 on a transparent substrate 30. The upper dielectric layer 34, the corrosion resistant insertion layer 35, the first reflective layer 36, the second reflective layer 37, and the protective layer 38 are sequentially stacked.
본 발명에 사용되는 기판은, 광디스크에 기판재료로서 통상적으로 사용되는 폴리카보네이트 등을 사용하여 스탬퍼를 이용한 사출성형 등의 방법으로 제조될 수 있다. 기판에 형성되는 그루브(groove)는 기록 및 재생에 필요한 서보(servo) 특성을 위해 그 폭과 깊이가 설계되며, 특히 고밀도화를 위해 랜드(land)와 그루브를 모두 기록, 재생하는 경우는 각각에 대한 크로스 토크(cross talk)를 방지하기 위해 그루브의 깊이를 λ/5n∼λ/7n(λ: 기록/재생 광파장, n:폴리카보네이트 기판의 굴절율)로 설정해야 한다.The substrate used in the present invention can be produced by a method such as injection molding using a stamper using polycarbonate or the like, which is commonly used as a substrate material for an optical disk. Grooves formed on the substrate are designed for the width and depth of the servo required for recording and playback, especially when recording and playing both land and grooves for higher density. In order to prevent cross talk, the depth of the grooves should be set to λ / 5n to λ / 7n (λ: recording / reproducing light wavelength, n: refractive index of polycarbonate substrate).
본 발명의 유전체층은 광투과 특성과 열적인 내구성을 갖추고 있어야 하기 때문에, 이를 구성하는 물질로는 흡수 계수가 0에 가까우며 열적 안정성이 뛰어난 금속 산화물, 금속 탄화물, 금속 질화물 또는 이들의 혼합물이 사용된다. 본 발명의 상변화형 광디스크의 유전체층은 기록층 하부에 형성되는 하부 유전체층과 기록층 상부에 형성되는 상부 유전체층으로 이루어지며, 하부 유전체층은 다시 제1 하부 유전체층 및 상기 제1 하부 유전체층 상에 형성되는 제2 하부 유전체층으로 이루어진다.Since the dielectric layer of the present invention must have light transmission characteristics and thermal durability, the material constituting the dielectric layer is a metal oxide, metal carbide, metal nitride, or a mixture thereof having an absorption coefficient close to zero and excellent in thermal stability. The dielectric layer of the phase change type optical disc of the present invention includes a lower dielectric layer formed below the recording layer and an upper dielectric layer formed above the recording layer, wherein the lower dielectric layer is formed on the first lower dielectric layer and the first lower dielectric layer. It consists of two lower dielectric layers.
하부 유전체층에 사용되기에 적합한 물질은 ZnS-SiO2, AlN, GeN, 산화실리콘, 질화실리콘, 산화알루미늄, 금속 산화물, 금속 탄화물, 이들의 혼합물 등을 포함하는데, RF 스퍼터링(radio-frequency sputtering), 반응성(reactive) 스퍼터링과 같은 통상적인 방법에 의해 유전체층으로 제조될 수 있다. 두께는 제1 하부 유전체층의 경우 500 내지 3000Å, 제 2 하부 유전체층의 경우 10 내지 500Å인 것이 바람직하고, 상부 유전체층의 경우에는 10 내지 500Å이다. 바람직하게는 제1 하부 유전체층은 ZnS-SiO2이고, 제2 하부 유전체층은 GeN 또는 질화실리콘으로 이루어진다.Suitable materials for use in the lower dielectric layer include ZnS-SiO 2 , AlN, GeN, silicon oxide, silicon nitride, aluminum oxide, metal oxides, metal carbides, mixtures thereof, and the like, including RF sputtering, The dielectric layer may be manufactured by conventional methods such as reactive sputtering. The thickness is preferably 500 to 3000 mV for the first lower dielectric layer, 10 to 500 mV for the second lower dielectric layer, and 10 to 500 mV for the upper dielectric layer. Preferably the first lower dielectric layer is ZnS-SiO 2 and the second lower dielectric layer is made of GeN or silicon nitride.
상부 유전체층으로는 GeN, 질화실리콘 등이 바람직하며 역시 RF 스퍼터링(radio-frequency sputtering)과 같은 통상적인 방법에 의해 성막될 수 있다.The upper dielectric layer is preferably GeN, silicon nitride, or the like, and may also be formed by conventional methods such as radio-frequency sputtering.
본 발명의 기록층에는 비정질화가 용이하며 단시간내에 결정화가 가능한 물질이 사용되는데, 상변화형 광디스크의 기록층에 통상적으로 사용되는 Ge-Sb-Te, In-Sb-Te, Ag-In-Sb-Te, 합금, Cr-Ge-Sb-Te 합금, N-Ge-Sb-Te 합금과 같은 칼코겐 화합물이 사용되며, 특성 개선을 위해 별도의 첨가 원소가 추가로 도입되는 경우도 있다. 기록층은 DC(direct current) 스퍼터링과 같은 통상적인 방법으로 성막하여 기록층으로 제조될 수 있다. 두께는 100 내지 1000Å인 것이 바람직하다.In the recording layer of the present invention, a material that can be easily amorphous and crystallized within a short time is used. Ge-Sb-Te, In-Sb-Te, Ag-In-Sb-, which are commonly used in the recording layer of a phase change type optical disk, are used. Chalcogen compounds such as Te, alloys, Cr-Ge-Sb-Te alloys and N-Ge-Sb-Te alloys are used, and additional additive elements are sometimes introduced to improve properties. The recording layer may be formed into a recording layer by forming a film by a conventional method such as DC (direct current) sputtering. The thickness is preferably 100 to 1000 mm 3.
반사층에는 기록층의 비정질화를 위한 열흡수 효과 및 광효율의 향상을 위하여 금속 재료가 사용되는데, 주로 Al, Ag, Au, Cu 등의 단일 원소 또는 이들 금속에 기록 감도와 내산화성 등을 위해 Cr, Ni, Ti, Si 등이 소량 첨가된 합금(예: Al-Ti(Ti 1.5중량%), Al-Cr(Cr 2 원자%) 과 같은 Al 합금, Ag-Al, Ag-Mg와 같은 Ag 합금 등)이 사용된다. 이때, 상기 반사층이 제1 반사층 및 상기 제1 반사층 보다 열전도율이 높은 제2 반사층으로 이루어지는 것이 바람직하며, 제1 반사층이 Al 합금이고, 제2 반사층이 Cu인 것이 특히 바람직하다. 또한, 두 반사층의 총 두께가 2000Å 이하인 것이 바람직하고, 제1반사층의 두께가 1300Å 이하, 제2반사층의 두께가 350 내지 700Å인 것이 더욱 바람직하다.In the reflective layer, a metal material is used to improve the heat absorption effect and the light efficiency of the recording layer in amorphous form, and mainly a single element such as Al, Ag, Au, Cu or Cr, for recording sensitivity and oxidation resistance, Alloys containing small amounts of Ni, Ti, Si, etc. (e.g., Al-Ti (1.5 wt% Ti), Al alloys such as Al-Cr (Cr 2 atomic%), Ag alloys such as Ag-Al, Ag-Mg, etc. ) Is used. In this case, it is preferable that the reflecting layer is made of a first reflecting layer and a second reflecting layer having a higher thermal conductivity than the first reflecting layer, and it is particularly preferable that the first reflecting layer is Al alloy and the second reflecting layer is Cu. Further, the total thickness of the two reflective layers is preferably 2000 kPa or less, more preferably 1300 kPa or less, and the thickness of the second reflective layer is 350 to 700 kPa.
본 발명에서는 반사층과 상부 유전체층 사이에 내부식성 삽입층을 형성시킨다. 내부식성 삽입층에 사용되는 물질로는 Ge, N, Al 합금과 반응을 일으키지 않는 것으로 알려진 ZnS-SiO2, AlN, Si3N4, Al2O3과 같은 산화물 또는 질화물을 사용한다. 내부식성 삽입층의 두께는 50 내지 500Å이다. 내부식성 삽입층은 RF 스퍼터링과 같은 통상적인 방법으로 성막할 수 있다.In the present invention, a corrosion resistant insertion layer is formed between the reflective layer and the upper dielectric layer. Materials used in the corrosion resistant interlayers include oxides or nitrides such as ZnS—SiO 2 , AlN, Si 3 N 4 , Al 2 O 3 , which are known to not react with Ge, N, or Al alloys. The corrosion resistant insertion layer has a thickness of 50 to 500 kPa. The corrosion resistant interlayer can be deposited by conventional methods such as RF sputtering.
각 층의 두께는 충분한 변조 신호 특성을 나타내기 위해 기록층이 비정질 상태일 경우의 반사율과 결정 상태일 경우의 반사율의 차이가 10% 이상 구현될 수 있도록 조합 설계하는 것이 바람직하다. 또한, 전술한 바와 같이 균일한 비정질 마크를 형성할 수 있을 정도로 충분히 급냉되면서도, 소거시 결정화에 필요한 시간 동안 기록층이 결정화 온도 이상으로 유지될 수 있는 가열, 냉각 특성을 지니도록 설계하여야 한다. 이때 디스크의 적정 가열, 냉각 특성은 기록층의 비정질화 임계 속도 및 결정화 속도에 따라 가변적이 될 수 있으므로 이들의 상관 관계를 고려하여 그 적정 두께 조합을 설정하여야 한다.The thickness of each layer is preferably designed in combination so that the difference in reflectance when the recording layer is in an amorphous state and reflectance when in a crystalline state can be realized by 10% or more in order to exhibit sufficient modulation signal characteristics. In addition, it should be designed to have heating and cooling characteristics such that the recording layer can be kept above the crystallization temperature for a time required for crystallization during erasing while being sufficiently quenched to form a uniform amorphous mark as described above. At this time, the proper heating and cooling characteristics of the disk may be varied depending on the amorphous rate and the crystallization rate of the recording layer. Therefore, the appropriate thickness combination should be set in consideration of their correlation.
또한, 랜드와 그루브에 동시에 기록할 경우에는 기록된 비정질 마크와 미기록부의 결정상태 매트릭스의 굴절율 차이에 의한 위상차와 이 위상차에 의한 간섭으로 야기되는 신호 진폭의 감소를 억제하기 위해, 비정질 상태에서의 반사율이 0에 가깝도록 하거나 이들 간섭에 의한 그루브에서의 신호 진폭과 랜드에서의 신호 진폭차를 최소화 할 수 있도록 각 층 두께를 설계하는 것이 추가로 필요하게 된다.When recording simultaneously to land and groove, in order to suppress the phase difference caused by the difference in refractive index between the recorded amorphous mark and the crystal state matrix of the unrecorded portion and the decrease in signal amplitude caused by the interference caused by the phase difference, It is additionally necessary to design each layer thickness so that the reflectance is close to zero or the difference between the signal amplitude in the groove and the signal amplitude in the land caused by these interferences is minimized.
또한 실제 양산시 재료비 생산 시간을 단축하기 위해 각 층의 두께는 제반 특성이 양호한 범위에서 되도록 얇은 것이 유리하다.In addition, in order to shorten the production time of material costs in actual production, it is advantageous that the thickness of each layer is as thin as possible so that various properties are in a good range.
보호층으로는 통상적으로 UV 경화형 수지 등이 사용된다.UV protective resin etc. are used normally as a protective layer.
상변화형 광디스크에 있어서, 고출력의 레이저 빔을 기록층에 조사하여 그 기록층을 국부적으로 용융시킨 다음, 급냉시키면 조사된 부분이 비정질화되어 기록마크가 형성된다. 여기에서 기록마크는 재생전용형 광디스크의 트랙을 따라 형성되는 피트에 해당되는 것이다. 이렇게 형성된 기록마크에 기록시 파워의 1/3 내지 1/2 정도의 출력을 갖는 레이저 빔을 조사하면 소거 영역인 결정질 구조가 형성되어 기록된 정보가 소거된다. 기록 마크의 형상을 균일하게 만들기 위해서는, 기록 펄스는 여러 짧은 펄스의 연속으로 이루어진 멀티 펄스를 사용하는 것이 바람직하다.In a phase change type optical disc, a laser beam of high power is irradiated to the recording layer, the recording layer is locally melted, and then quenched, and the irradiated portion is amorphous to form a recording mark. The recording mark here corresponds to a pit formed along the track of the reproduction-only optical disc. When the thus formed recording mark is irradiated with a laser beam having an output of about 1/3 to 1/2 of the power at the time of recording, a crystalline structure which is an erase area is formed to erase the recorded information. In order to make the shape of the recording mark uniform, it is preferable to use a multi pulse consisting of a series of several short pulses as the recording pulse.
중첩 기록 후에도 양호한 재생 신호 특성을 얻기 위해서는 기록시 균일한 형상의 비정질 마크가 형성되어야 하며 소거시에 이 비정질 마크는 충분히 결정화되어야 한다. 또한, 이렇게 재결정화된 영역의 결정립의 크기가 가능한 한 균일하여야 한다. 즉, 반사층은 레이저 입사광에 의하여 용융된 기록층 부분의 열을 빠른 속도로 빼앗아 기록층의 용융부위가 높은 냉각 속도를 가지게 하여 비정질 마크를 형성하도록 도와준다.In order to obtain good reproduction signal characteristics even after superimposing recording, an amorphous mark of uniform shape must be formed during recording and this amorphous mark must be sufficiently crystallized during erasing. In addition, the grain size of the recrystallized region should be as uniform as possible. In other words, the reflective layer takes away the heat of the portion of the recording layer melted by the laser incident light at a high speed, thereby helping to form the amorphous mark by having the melting portion of the recording layer have a high cooling rate.
균일한 비정질 마크가 형성되기 위해서는 우선, 용융점 이상으로 가열된 기록층이 급냉되어야 한다. 하지만, 냉각 속도가 너무 빠르면, 소거시 결정화에 필요한 만큼 충분한 시간 동안 유지되지 않기 때문에 제대로 소거가 되지 않을 수 있다. 다시 말해 기록층의 냉각 속도가 느리면 제대로 기록이 되지 않고 반대로 너무 빠르면 소거가 제대로 되지 않는다. 이러한 이유로 상변화형 광디스크의 구조 설계에 있어 기록 및 소거가 모두 양호하게 이루어질 수 있는 범위내로 냉각 속도를 나타내도록 하는 것은 매우 중요하다.In order to form a uniform amorphous mark, first, the recording layer heated above the melting point must be quenched. However, if the cooling rate is too fast, it may not be erased properly because it is not maintained for as long as necessary for crystallization during erasing. In other words, if the cooling rate of the recording layer is slow, recording is not performed properly. On the contrary, if the recording layer is too fast, erasing is not performed properly. For this reason, it is very important to design the cooling rate within the range in which both recording and erasing can be performed well in the structure design of the phase change type optical disk.
상변화형 광디스크에서 냉각 속도는 주로 각 층의 열전도율과 두께에 의해 결정된다. 따라서 이들 각 층 재료의 선택과 두께의 조합이 잘 이루어져야만 양호한 중첩기록 특성을 나타내게 된다. 중첩 기록 특성의 지표로는 재생 신호의 시간 편차를 의미하는 지터(jitter)가 사용되며, 지터가 낮을수록 신호 특성이 양호한 것이다.In phase change optical disks, the cooling rate is mainly determined by the thermal conductivity and thickness of each layer. Therefore, a good combination of the thickness and the selection of each of these layer materials can be achieved to show good overlapping recording characteristics. As an indicator of the superposition recording characteristic, jitter which means time deviation of the reproduction signal is used, and the lower the jitter, the better the signal characteristic.
상변화형 광디스크에서 요구되는 또 한가지 특성은 반복기록 내구성이다. 이는 여러번 기록과 소거를 반복하여도 재생 신호 특성에 열화가 나타나지 않는 것을 의미한다. 상변화형 광디스크에 있어 반복 기록에 의한 열화는 주로 열적인 부하가 축적됨에 의한 기록층의 변형이나 석출 등에 기인하는 것으로 알려져 있다. 때문에, 열화를 억제하기 위해서는 되도록 이러한 열 부하를 감소시키는 것이 필요하다. 이 경우도 위에서 언급한 중첩 기록 특성과 마찬가지로 기록층의 냉각 특성에 의해 좌우되며, 가급적 급냉 구조를 가지는 것이 유리하다.Another characteristic required for a phase change optical disk is repeat recording durability. This means that deterioration does not occur in the reproduction signal characteristics even after repeated recording and erasing. It is known that deterioration due to repetitive recording in a phase change type optical disc is mainly caused by deformation or precipitation of the recording layer due to accumulation of thermal load. Therefore, in order to suppress deterioration, it is necessary to reduce this heat load as much as possible. This case also depends on the cooling characteristics of the recording layer, similarly to the above-mentioned superposition recording characteristics, and it is advantageous to have a quench structure as much as possible.
이외에 요구되는 특성으로는 크로스 소거(cross erase) 방지 특성이 있다. 크로스 소거 현상은 정보 저장용량을 늘리기 위한 고밀도 기록을 위해 정보가 기록되는 트랙 간격을 줄일 때 발생하는 것으로서, 기록이 행해지는 해당 트랙의 열에 의해 인접한 트랙의 기록마크가 지워지는 현상을 의미한다. 이를 방지하기 위해서는 인접 트랙으로의 열 확산을 억제하는 것이 필요하다. 이 경우도 반복 내구성과 같이 기록층의 냉각 속도에 의해 좌우되며, 또한 급냉구조를 가지는 것이 유리하다.In addition, there is a cross erase prevention characteristic. The cross erase phenomenon occurs when the track interval at which information is recorded for high density recording to increase the information storage capacity, and means that the recording marks of adjacent tracks are erased by the row of the track in which recording is performed. In order to prevent this, it is necessary to suppress heat diffusion to adjacent tracks. This case also depends on the cooling rate of the recording layer, such as repeat durability, and it is advantageous to have a quench structure.
이상을 종합하면, 양호한 중첩기록을 나타내는 범위내로 디스크의 냉각 구조를 설계하여도 반복 기록 내구성 및 크로스 소거 특성의 향상은 어느 정도 한계를 가질 수 밖에 없음을 알 수 있다.In summary, it can be seen that even if the cooling structure of the disc is designed within the range of good overlapping recording, the improvement of the repeat recording durability and the cross erase characteristic can be limited to some extent.
상술한 바와 같이 기존의 상변화형 광디스크는 양호한 중첩 기록 특성을 나타내는 범위로 디스크의 각 층을 설계할 경우, 반복 기록 내구성 및 크로스 소거 특성을 일정 수준 이상 향상시킬 수 없는 문제점을 가지고 있다. 즉, 반복기록내구성 및 크로스 소거 특성을 향상시키기 위해 디스크 냉각 구조를 급냉구조로 설계할 경우, 중첩기록 특성 구현시 특히 소거가 안되는 문제가 발생하게된다. 이는 앞에서 설명한 바와 같이 기록된 비정질 마크의 소거시 필요한 결정화온도 및 그 유지시간이 높은 냉각 속도에 의하여 충분하지 못한 것에 기인한다. 따라서, 높은 냉각 구조를 가지면서, 양호한 중첩기록 특성을 유지하는 것이 중요하다.As described above, the conventional phase change type optical disc has a problem in that the repetitive recording endurance and the cross erase characteristic cannot be improved by a certain level or more when each layer of the disc is designed in a range showing good overlap recording characteristics. That is, when the disc cooling structure is designed as a quench structure in order to improve the repeat recording durability and cross erase characteristics, there is a problem that the erasure is not particularly realized when the superimposed recording characteristics are implemented. This is due to the insufficient crystallization temperature and its holding time necessary for erasing the recorded amorphous marks as described above due to the high cooling rate. Therefore, it is important to maintain a good superimposition characteristic while having a high cooling structure.
본 발명을 실시예를 들어 상세히 설명하기로 하되, 본 발명이 하기 실시예로만 한정되는 것은 아니다.The present invention will be described in detail with reference to Examples, but the present invention is not limited only to the following Examples.
실시예 1Example 1
스탬퍼를 사용한 사출성형법에 의하여 깊이 70㎚의 나선형 그루브가 형성되어 있는 두께 0.6㎜ 폴리카보네이트 디스크 기판을 제조하였다. 이때, 기판의 그루브와 인접 그루브 사이의 간격은 1.40∼1.48㎛, 그루브와 랜드 사이의 간격은 그 1/2에 해당하는 0.70∼0.74㎛였다. 또한, 각 그루브에는 동일 주파수의 워블(Wobble) 신호가 검출될 수 있도록 굴곡을 형성시켰다.By injection molding using a stamper, a 0.6 mm thick polycarbonate disk substrate was formed in which a spiral groove having a depth of 70 nm was formed. At this time, the space | interval between the groove of a board | substrate and an adjacent groove was 1.40-1.48 micrometers, and the space | interval between a groove and a land was 0.70-0.74 micrometer corresponding to 1/2. Further, each groove was formed with a bend such that a wobble signal of the same frequency could be detected.
상기 디스크 기판의 그루브 형성면에 ZnS-SiO2(8:2)를 RF 스퍼터링하여 제1 하부 유전체층을 두께 830Å로 성막하였다. 이 위에, Ge 합금(GeMo, GeCr 등)과 N2를 반응성(reactive) 스퍼터링하여 200Å 두께의 GeN 제2 하부 유전체층을 성막하였다.ZnS-SiO 2 (8: 2) was RF sputtered on the groove forming surface of the disk substrate to form a first lower dielectric layer with a thickness of 830 Å. Reactive sputtering of Ge alloys (GeMo, GeCr, etc.) and N 2 was formed thereon to form a GeN second lower dielectric layer having a thickness of 200 kHz.
이후, 상기 제2 하부유전체층 상부에 Ge-Sb-Te계 합금 박막을 DC 스퍼터링법에 의해 두께 200Å로 성막하고, 이 위에 상기와 같은 방법으로 100Å 두께의 GeN 상부 유전체층을 형성시킨 후, ZnS-SiO2(8:2)를 RF 스퍼터링하여 내부식성 삽입층을 100Å으로 성막하였다.Subsequently, a Ge—Sb—Te based alloy thin film is formed on the second lower dielectric layer by DC sputtering to a thickness of 200 μs, and a GeN upper dielectric layer having a thickness of 100 μs is formed on the ZnS-SiO on the same method as described above. 2 (8: 2) was RF sputtered to form a corrosion resistant insertion layer at 100 kPa.
이어서, AlCr 제1반사층과 Cu 제2반사층을 DC 스퍼터링법으로 각각 300Å 및 700Å 두께로 성막하였다. 보호층으로는 UV 경화형 수지(상품명: SD17:DIC)를 스핀코팅한 후 경화시켰다.Subsequently, an AlCr first reflection layer and a Cu second reflection layer were formed to have a thickness of 300 mW and 700 mW by DC sputtering, respectively. The protective layer was cured after spin coating a UV curable resin (trade name: SD17: DIC).
상기 상변화형 광디스크를 초기화하기 위하여 초기화 장치에 장착한 다음, 디스크를 회전시키면서 반도체 레이저 빔(파장: 830㎚)을 조사하여 기록층을 결정화시켰다.In order to initialize the phase change type optical disk, the recording layer was crystallized by irradiating a semiconductor laser beam (wavelength: 830 nm) while rotating the disk.
실시예 2Example 2
AlCr 제1반사층과 Cu 제2반사층의 두께를 모두 500Å으로 하는 것을 제외하고는, 실시예 1과 동일한 방법에 따라 실시하였다.The same procedure as in Example 1 was carried out except that the thicknesses of the AlCr first reflection layer and the Cu second reflection layer were both 500 kPa.
비교예 1Comparative Example 1
ZnS-SiO2내부식성 삽입층을 형성시키지 않은 것을 제외하고는 실시예 1과 동일한 방법에 따라 실시하였다.The same procedure as in Example 1 was conducted except that the ZnS-SiO 2 corrosion resistant insertion layer was not formed.
비교예 2Comparative Example 2
GeN 제2 하부 유전체층과 ZnS-SiO2내부식성 삽입층을 형성시키지 않은 것을 제외하고는 실시예 1과 동일한 방법에 따라 실시하였다.The same process as in Example 1 was conducted except that the GeN second lower dielectric layer and the ZnS-SiO 2 corrosion resistant insertion layer were not formed.
비교예 3Comparative Example 3
ZnS-SiO2제1 하부 유전체층과 ZnS-SiO2내부식성 삽입층을 형성시키지 않은 것을 제외하고는 실시예 1과 동일한 방법에 따라 실시하였다.The same process as in Example 1 was conducted except that the ZnS-SiO 2 first lower dielectric layer and the ZnS-SiO 2 corrosion resistant insertion layer were not formed.
비교예 4Comparative Example 4
ZnS-SiO2내부식성 삽입층을 형성시키지 않고, GeN 제2 하부 유전체층의 두께를 50Å로 한 것을 제외하고는 실시예 1과 동일한 방법에 따라 실시하였다.The same procedure as in Example 1 was carried out except that the thickness of the GeN second lower dielectric layer was 50 mW, without forming a ZnS-SiO 2 corrosion resistant insertion layer.
비교예 5Comparative Example 5
ZnS-SiO2내부식성 삽입층을 형성시키지 않고, GeN 제2 하부 유전체층의 두께를 200Å로 한 것을 제외하고는 실시예 1과 동일한 방법에 따라 실시하였다.The same procedure as in Example 1 was carried out except that the thickness of the GeN second lower dielectric layer was 200 mW, without forming a ZnS-SiO 2 corrosion resistant insertion layer.
비교예 6Comparative Example 6
GeN 제2 하부 유전체층 및 ZnS-SiO2내부식성 삽입층을 적용하지 않고, 하부 유전체층을 950Å 두께의 ZnS-SiO2단일층으로 하고, 상부 유전체층을 120Å 두께의 ZnS-SiO2로 하고, 제1 반사층과 제2 반사층이 두께를 각각 500Å 및 100Å으로 한 것을 제외하고는 실시예 1과 동일한 방법에 따라 실시하였다.Without applying the GeN second lower dielectric layer and the ZnS-SiO 2 corrosion resistant interlayer, the lower dielectric layer is a 950 Å thick ZnS-SiO 2 single layer, the upper dielectric layer is 120 Å thick ZnS-SiO 2 , and the first reflective layer The same process as in Example 1 was carried out except that the thicknesses of the second and second reflective layers were 500 mW and 100 mW, respectively.
비교예 7Comparative Example 7
Cu 제2 반사층의 두께를 400Å으로 한 것을 제외하고는 비교예 6과 동일한 방법에 따라 실시하였다.The same procedure as in Comparative Example 6 was carried out except that the thickness of the Cu second reflective layer was changed to 400 GPa.
제조된 광디스크의 특성을 다음과 같이 평가한 후, 그 결과를 표 1에 나타내었다.After evaluating the characteristics of the manufactured optical disc as follows, the results are shown in Table 1.
(1) 중첩기록 특성(1) Overlap recording characteristics
광디스크를 CD-RW 전용 동특성 평가기(제조사: 나카미치(Nakamichi)사, 모델명: OMS-2000)에 장착한 다음, 8.2m/s로 회전시키며 트랙상에 3T 내지 14T(Tw=28.6㎱)의 랜덤 패턴의 신호를 기록한 후 일정 클록(clock)에 대한 재생신호의 지터값을 평가하였다. 동특성 평가기 픽업에 사용된 광원의 파장은 680㎚, 대물렌즈의 NA는 0.60이었다.The optical disc was mounted on a CD-RW dedicated dynamic characteristics evaluator (manufacturer: Nakamichi, model name: OMS-2000), and then rotated at 8.2 m / s and mounted on a track of 3T to 14T (T w = 28.6㎱). After recording a signal of a random pattern, the jitter value of the reproduction signal with respect to a certain clock was evaluated. The wavelength of the light source used for pickup of the dynamics evaluator was 680 nm, and the NA of the objective lens was 0.60.
지터는 재생신호의 신호편차를 의미하는 것으로 낮을수록 양호한 신호특성을 나타내는데, 10회 이상 기록후 지터값이 4.0㎱ 이하인 것을 양호한 것으로 판정하였다.The jitter means a signal deviation of the reproduction signal, and the lower the signal quality, the better the signal characteristics. After 10 or more recordings, it was determined that the jitter value was 4.0 dB or less.
(2) 반복기록 내구성(2) repeated recording durability
광디스크의 동일 트랙에 동일 파워로 다수 회 반복 기록 후, 재생 신호의 3T 지터값을 측정하였다. 이때, 3T 지터값이 4.0㎱를 넘기 시작하는 횟수를 반복 기록 가능 횟수로 설정하였다. 이때, 10회 중첩기록 후 지터값이 4.0㎱를 초과하는 경우에는 반복 기록 내구성 평가의 의미가 없으므로 제외하였다.After multiple repetitive recordings of the same power on the same track of the optical disc, 3T jitter values of the reproduction signals were measured. At this time, the number of times that the 3T jitter value began to exceed 4.0 ms was set as the number of times that can be repeatedly recorded. At this time, when the jitter value exceeded 4.0 ms after 10 overlapping recordings, the repeated recording durability evaluation had no meaning, and thus was excluded.
반복기록 횟수가 100,000회 이상인 것을 양호한 것으로 판정하였다.It was determined that the repetitive recording count was 100,000 or more.
(3) 내부식성(3) corrosion resistance
샘플을 80℃의 온도, 85%의 상대습도에서 24시간 방치 후, 육안으로 보았을 때, 디스크 표면에 부식 현상이 발생하지 않은 것을 양호한 것으로 평가하였다.After leaving the sample for 24 hours at a temperature of 80 ° C. and a relative humidity of 85%, it was evaluated that it was satisfactory that no corrosion phenomenon occurred on the surface of the disk.
(4) 크로스 소거(4) cross erase
그루브 트랙에 10회 중첩기록 한 후, 양 인접 랜드 트랙에 그루브 트랙에 기록한 파워의 1.3배에 해당하는 파워로 10회 중첩기록하였다. 이때, 인접 트랙 기록전과 후의 지터 값의 증가율을 측정하였다. 이때, 10회 중첩기록 특성이 4.0㎱ 이상인 경우는 크로스 소거 특성 평가의 의미가 없어 평가에서 제외하였다.After 10 recordings were recorded on the groove tracks, 10 times were recorded on both adjacent land tracks at 1.3 times the power recorded on the groove tracks. At this time, the increase rate of the jitter value before and after recording adjacent tracks was measured. In this case, when the 10th superposition recording characteristic is 4.0 ms or more, the cross erase characteristic evaluation has no meaning and is excluded from the evaluation.
지터 증가율이 20% 이하인 것을 양호한 것으로 판정하였다.It was determined that the jitter increase rate was 20% or less.
상기 표 1의 결과로부터 알 수 있는 바와 같이, 실시예 1 및 2에 따른 본 발명의 상변화형 광디스크는 중첩기록 특성, 내부식성, 반복기록내구성 및 크로스소거 특성이 모두 우수하였다. 반면, 본 발명의 범위에서 벗어난 구성을 지니는 비교예에 따른 디스크는 상기 특성이 전반적으로 불량하였다.As can be seen from the results of Table 1, the phase change type optical discs of the present invention according to Examples 1 and 2 were excellent in all of the superposition recording characteristics, corrosion resistance, repeated recording durability and cross erasing characteristics. On the other hand, the disc according to the comparative example having a configuration outside the scope of the present invention was generally poor in the above characteristics.
특히, 도 5는 실시예 1 및 비교예 1에 따른 상변화디스크의 기록특성을 도시한 것으로 비교예 1의 경우 10회 중첩기록 이후에 지터값이 크게 증가한 것을 알 수 있다. 또한, 도 6은 비교예 1, 6 및 7에 따른 상변화디스크의 기록특성을 도시한 것으로 반복기록 내구성이 매우 불량한 것을 알 수 있다.In particular, FIG. 5 shows the recording characteristics of the phase change disks according to Example 1 and Comparative Example 1, and it can be seen that in Comparative Example 1, the jitter value increased significantly after 10 overlapping recordings. 6 shows recording characteristics of the phase change disks according to Comparative Examples 1, 6 and 7, and it can be seen that the repeat recording durability is very poor.
본 발명의 상변화형 광디스크는 우수한 내식성, 중첩기록 특성, 크로스 소거특성 및 반복기록내구성을 나타내므로, 서환형 광디스크로서 적합하다.The phase change type optical disc of the present invention exhibits excellent corrosion resistance, superimposed recording characteristics, cross erasing characteristics, and repeatable recording durability, and is therefore suitable as a slow ring type optical disk.
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019990029212A KR20010010365A (en) | 1999-07-20 | 1999-07-20 | Phase change optical disc |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019990029212A KR20010010365A (en) | 1999-07-20 | 1999-07-20 | Phase change optical disc |
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KR20010010365A true KR20010010365A (en) | 2001-02-05 |
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KR1019990029212A KR20010010365A (en) | 1999-07-20 | 1999-07-20 | Phase change optical disc |
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KR (1) | KR20010010365A (en) |
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1999
- 1999-07-20 KR KR1019990029212A patent/KR20010010365A/en not_active Application Discontinuation
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