KR20010008429A - Polishing pad conditioner and polishing pad conditioning method using the same - Google Patents
Polishing pad conditioner and polishing pad conditioning method using the same Download PDFInfo
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- KR20010008429A KR20010008429A KR1019980062513A KR19980062513A KR20010008429A KR 20010008429 A KR20010008429 A KR 20010008429A KR 1019980062513 A KR1019980062513 A KR 1019980062513A KR 19980062513 A KR19980062513 A KR 19980062513A KR 20010008429 A KR20010008429 A KR 20010008429A
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- polishing pad
- polishing
- brush
- conditioner
- conditioning method
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- 238000005498 polishing Methods 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 21
- 230000003750 conditioning effect Effects 0.000 title claims abstract description 19
- 239000000126 substance Substances 0.000 claims abstract description 6
- 239000011347 resin Substances 0.000 claims abstract 4
- 229920005989 resin Polymers 0.000 claims abstract 4
- 239000002002 slurry Substances 0.000 claims description 11
- 238000005457 optimization Methods 0.000 claims description 4
- 239000004743 Polypropylene Substances 0.000 claims description 3
- -1 polypropylene Polymers 0.000 claims description 3
- 229920001155 polypropylene Polymers 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- 238000011066 ex-situ storage Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000007517 polishing process Methods 0.000 claims description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 14
- 229910003460 diamond Inorganic materials 0.000 abstract description 9
- 239000010432 diamond Substances 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 230000003628 erosive effect Effects 0.000 abstract description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 3
- 229910052731 fluorine Inorganic materials 0.000 abstract 3
- 239000011737 fluorine Substances 0.000 abstract 3
- 230000001143 conditioned effect Effects 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
반도체 기판 상의 구조물을 균일하게 평탄화하기 위한 화학 물리적 연마(Chemical Mechanical Polishing, 이하 CMP라 함.)용 연마패드를 최적화하는 연마패드 컨디셔너(conditioner)와 이를 이용한 연마패드 컨디셔닝 방법에 대해 개시하고 있다. 본 발명에 의한 연마패드 컨디셔너는, 연마패드의 컨디셔닝을 위해 연마정반(platen)에 불소수지를 브러시(brush) 형태로 장착하고 있다. 이에 따라, 불소수지를 장착한 연마정반과 연마패드의 상호 회전에 의해 연마패드를 최적화시킨다. 따라서, 본 발명에 따라 브러시 형태의 불소수지를 이용하여 연마패드를 컨디셔닝함으로써 침식과 디싱을 방지하여 연마균일도를 향상시킬 수 있으므로 전기적 특성이 양호한 반도체 소자를 제조할 수 있으며, 후속 공정으로 넓은 윈도우(window)를 확보할 수 있다. 또한, 종래의 다이아몬드를 대체하며, 연마패드의 사용기간이 연장되므로 비용을 절감할 수 있는 효과도 있다.Disclosed are a polishing pad conditioner for optimizing a polishing pad for chemical mechanical polishing (CMP) to uniformly planarize a structure on a semiconductor substrate, and a polishing pad conditioning method using the same. In the polishing pad conditioner according to the present invention, the fluorine resin is attached to the polishing platen in the form of a brush for conditioning the polishing pad. Accordingly, the polishing pad is optimized by mutual rotation of the polishing table with the fluorine resin and the polishing pad. Therefore, according to the present invention, by using a brush-type fluorine resin, the polishing pad is conditioned to prevent erosion and dishing, thereby improving polishing uniformity, thereby manufacturing a semiconductor device having good electrical characteristics. window). In addition, it replaces the conventional diamond, there is an effect that can reduce the cost because the service life of the polishing pad is extended.
Description
본 발명은 CMP용 연마패드 컨디셔너에 관한 것으로서, 특히 반도체 기판 상의 구조물을 균일하게 평탄화하기 위한 CMP용 연마패드를 최적화하는 연마패드 컨디셔너에 관한 것이다.The present invention relates to a polishing pad conditioner for CMP, and more particularly to a polishing pad conditioner for optimizing the polishing pad for CMP to uniformly planarize a structure on a semiconductor substrate.
또한, 본 발명은 연마패드의 컨디셔닝 방법에 관한 것으로서, 특히 CMP용 연마패드의 최적화를 위한 연마패드 컨디셔닝 방법에 관한 것이다.The present invention also relates to a polishing pad conditioning method, and more particularly, to a polishing pad conditioning method for optimizing a polishing pad for CMP.
반도체 집적회로의 집적도가 증가함과 더불어 다층배선 공정이 실용화됨에 따라, 층간절연막의 글로벌(Global) 평탄화의 중요성이 커지고 있으며, 이런 가운데 새로운 평탄화 기술로서 주목받기 시작한 것이 CMP이다.As the degree of integration of semiconductor integrated circuits increases and the multi-layer wiring process is put to practical use, the global planarization of the interlayer insulating film is becoming more important, and among these, CMP has begun to attract attention as a new planarization technology.
CMP장비는, 연마패드에 의한 물리적 연마와 연마제에 의한 화학적 연마에 의해서 반도체 기판 상의 구조물 표면을 화학 물리적으로 연마한다. 이 때문에, 당초에는 청정(Clean)도 문제 등 실용성에 의문을 갖기도 했으나, 종래 방법에 비해 수직방향의 형상 제어성이 뛰어나서 실용화에 대한 기대가 커지고 있다. 이러한 상황을 감안하여 반도체장비 제조업자들도 초고집적 반도체 집적회로의 양산단계에 대응할 수 있는 CMP장비의 개발에 박차를 가하고 있는 실정이다.The CMP apparatus chemically and physically polishes the surface of a structure on a semiconductor substrate by physical polishing with a polishing pad and chemical polishing with an abrasive. For this reason, in the beginning, although the cleanness problem and the practicality were also questioned, compared with the conventional method, the shape controllability of the vertical direction is excellent, and the expectation for practical use is increasing. In view of this situation, semiconductor equipment manufacturers are also accelerating the development of CMP equipment that can cope with the mass production stage of ultra-high-density semiconductor integrated circuits.
도 1은 종래의 연마패드 컨디셔너의 개략도이다. 도 1을 참조하면, 종래의 연마패드 컨디셔너는, 구동수단(10)과, 이의 동력을 전달받아 회전하는 회전판(20)과, 이에 결합되어 회전하며 연마패드를 최적화시키는 연마정반(30)으로 구성되어 있다. 이 연마정반(30)에는 연마패드를 최적화하기 위해 하부에 다이아몬드(40)가 형성되어 있다. 이 다이아몬드(40)는 163㎛정도의 크기이다.1 is a schematic diagram of a conventional polishing pad conditioner. Referring to FIG. 1, a conventional polishing pad conditioner includes a driving means 10, a rotating plate 20 that is rotated by receiving power thereof, and a polishing plate 30 that is coupled to and rotates to optimize a polishing pad. It is. The polishing table 30 is formed with a diamond 40 at the bottom in order to optimize the polishing pad. This diamond 40 is about 163 micrometers in size.
그러나, 종래의 이러한 연마패드를 최적화하는 연마패드 컨디셔너는 다음과 같은 문제점이 있었다.However, conventional polishing pad conditioners for optimizing such polishing pads have the following problems.
그 첫째는, 다이아몬드(40)를 사용하여 컨디셔닝을 수행할 경우, 상기 연마패드의 마모상태를 크게 변형시킨다. 또한, 연마패드에 가해지는 압력이 부분적으로 다르기 때문에 연마패드 마모상태가 변하므로 텅스텐 막의 연마속도가 400~1000Å정도 차이가 발생하였다. 그리고, 반도체 기판 간 공정균일도가 좋지 않아 넓은 공정 윈도우를 확보할 수 없다는 문제점이 있었다.First of all, when the diamond 40 is used for conditioning, the wear state of the polishing pad is greatly deformed. In addition, since the pressure applied to the polishing pad is partially different, the polishing pad wear condition is changed, so that the polishing speed of the tungsten film is about 400 to 1000 kPa. In addition, there is a problem that the process uniformity between semiconductor substrates is not good, so a wide process window cannot be secured.
그 둘째는, 상기 불균일한 다이아몬드 컨디셔닝은 반도체 소자의 후속공정에서 디싱(dishing)과 침식(erosion)을 심화시키므로 반도체 소자의 특성을 크게 악화시키는 결과를 가져 온다는 문제점이 있었다.Second, there is a problem that the non-uniform diamond conditioning intensifies dishing and erosion in a subsequent process of the semiconductor device, thereby greatly deteriorating the characteristics of the semiconductor device.
그 셋째는, 다이아몬드 컨디셔닝은 상기 다이아몬드(40)의 수명이 매우 짧아 비용면에서 단점을 가지고 있으며, 이 다이아몬드(40) 조각이 반도체 기판 상에 떨어질 경우에 커다란 긁힘(scratch)이 발생하여 수율을 감소시킨다는 문제점이 있었다.Third, diamond conditioning has disadvantages in terms of cost because the diamond 40 has a very short lifespan, and large scratches occur when the diamond 40 falls on a semiconductor substrate, thereby reducing yield. There was a problem.
이외에, 적절한 컨디셔닝을 하지 않을 경우에 슬러리가 연마패드에 누적되어 연마를 진행할수록 연마속도의 차이가 발생하고, 슬러리의 경화로 긁힘이 발생하는 문제점이 있었다.In addition, when proper conditioning is not performed, as the slurry accumulates on the polishing pad and the polishing proceeds, a difference in polishing rate occurs, and scratches occur due to curing of the slurry.
따라서, 본 발명의 기술적 과제는 반도체 기판 상의 구조물을 균일하게 평탄화하기 위한 CMP용 연마패드를 최적화시키기 위한 연마패드 컨디셔너를 제공하는데 있다.Accordingly, an aspect of the present invention is to provide a polishing pad conditioner for optimizing a polishing pad for CMP for uniformly flattening a structure on a semiconductor substrate.
또한, 본 발명의 다른 기술적 과제는 브러시를 이용하여 연마패드를 최적화시키는 연마패드 컨디셔닝 방법을 제공하는데 있다.In addition, another technical problem of the present invention is to provide a polishing pad conditioning method for optimizing the polishing pad using a brush.
도 1은 종래의 연마패드 컨디셔너의 개략도,1 is a schematic view of a conventional polishing pad conditioner,
도 2는 본 발명의 일 실시예에 따른 연마패드 컨디셔너의 개략도 및 부분확대도이다.2 is a schematic and partially enlarged view of a polishing pad conditioner according to an embodiment of the present invention.
〈도면의 주요부분에 대한 부호의 설명〉<Explanation of symbols for main parts of drawing>
10 : 구동수단 20 : 회전판10: drive means 20: rotating plate
30 : 연마정반 50 : 브러시30: polishing table 50: brush
상기 기술적 과제들을 달성하기 위한 본 발명에 의한 연마패드 컨디셔너는, 화학 물리적 연마용 연마패드를 최적화하는데 사용되는데, 상기 연마패드 컨디셔너에 브러시를 장착하는 것을 특징으로 한다.The polishing pad conditioner according to the present invention for achieving the above technical problems is used to optimize the polishing pad for chemical physical polishing, characterized in that the brush is mounted to the polishing pad conditioner.
이 때, 상기 브러시 재질은 산에 의해 영향받지 않는 폴리프로필렌 또는 불소수지인 것이 바람직하다.In this case, the brush material is preferably polypropylene or fluororesin which is not affected by acid.
한편, 본 발명에 의한 연마패드 컨디셔닝 방법은, 화학 물리적 연마공정에서 연마패드를 최적화시키는데 적용된다. 그 방법은 브러시를 이용하여 연마패드를 최적화하는 것을 특징으로 한다.Meanwhile, the polishing pad conditioning method according to the present invention is applied to optimize the polishing pad in a chemical physical polishing process. The method is characterized by optimizing the polishing pad using a brush.
이 때, 상기 연마패드의 최적화는 익스-시튜로 진행되며, 슬러리를 플로우시키면서 1장씩 진행하는 것이 바람직하다. 이 경우에, 상기 슬러리 플로우 비율은 100~120 ml/min 범위내에서 설정된 값으로 진행하는 것이 더욱 바람직하다.At this time, the optimization of the polishing pad proceeds ex-situ, and it is preferable to proceed one by one while flowing the slurry. In this case, it is more preferable that the slurry flow rate is set to a value set within a range of 100 to 120 ml / min.
또한, 상기 연마패드의 최적화는 1.5~2.0lbs의 압력을 가하여 진행하는 것이 더욱 바람직하다.In addition, the optimization of the polishing pad is more preferably carried out by applying a pressure of 1.5 ~ 2.0lbs.
그리고, 상기 연마패드의 최적화를 위해 브러시와 연마패드를 동일 또는 반대 방향으로 회전시키며, 상기 브러시와 연마패드의 회전속도는 25~30rpm 범위내에서 설정된 값으로 진행하는 것이 바람직하다.Then, to optimize the polishing pad, the brush and the polishing pad are rotated in the same or opposite direction, and the rotation speed of the brush and the polishing pad is preferably set to a value set within a range of 25 to 30 rpm.
이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예에 대해 설명한다.Hereinafter, with reference to the accompanying drawings will be described a preferred embodiment of the present invention.
도 2는 본 발명의 일 실시예에 따른 연마패드 컨디셔너의 개략도 및 부분확대도이다. 도 2를 참조하면, 본 발명의 연마패드 컨디셔너는 연마정반(30)에 브러시(50)가 설치되어 있다. 이 브러시(50)는 구체적으로 폴리프로필렌(polypropylene)이다. 그리고, 나머지 구성요소는 종래와 동일하다.2 is a schematic and partially enlarged view of a polishing pad conditioner according to an embodiment of the present invention. 2, in the polishing pad conditioner of the present invention, a brush 50 is provided on the polishing surface 30. This brush 50 is specifically polypropylene. The remaining components are the same as before.
상기와 같이 구성된 연마패드의 컨디셔닝 방법에 대해 살펴보자.Let's look at the conditioning method of the polishing pad configured as described above.
먼저, 컨디셔닝의 조건은, 브러시(50)의 작용반경은 2~4인치이며, 브러시(50)의 압력은 1.5~2.0lbs이며, 브러시(50) 스윕시간은 8~10초이며, 슬러리 플로우 속도는 100~120㎖/min이다. 이는 폴리싱때의 슬러리 플로우 속도와 같다. 또한, 본 실시예에서는 슬러리는 기가페라이트(gigaferrate)-50과 울트라플레인-피엠씨(ultraplane-PMC)와 초순수물을 1:2:7의 비율로 혼합하여 실험하였으나, 본 발명에 의한 브러시(50)는 특정 슬러리에 국한되지 않고 모든 슬러리를 사용할 수 있다.First, the condition of the condition, the working radius of the brush 50 is 2 to 4 inches, the pressure of the brush 50 is 1.5 to 2.0 lbs, the sweep time of the brush 50 is 8 to 10 seconds, slurry flow rate Is 100-120 ml / min. This is equal to the slurry flow rate at the time of polishing. In addition, in the present embodiment, the slurry was experimented by mixing gigaferrate-50, ultraplane-PMC, and ultrapure water in a ratio of 1: 2: 7, but the brush 50 according to the present invention was tested. Is not limited to specific slurries and all slurries may be used.
상기와 같은 조건에서, 연마패드와 브러시(50)가 장착된 연마정반(30)을 상호 동일방향 또는 반대 방향으로 회전한다. 이 때, 연마정반(30)은 25~30rpm으로 회전한다. 이는, 폴리싱때의 연마정반(30) 회전속도의 절반정도가 된다.Under the above conditions, the polishing table 30 on which the polishing pad and the brush 50 are mounted is rotated in the same direction or the opposite direction to each other. At this time, the polishing table 30 rotates at 25 to 30 rpm. This is about half of the rotational speed of the polishing surface 30 at the time of polishing.
이 때, 텅스텐의 연마속도를 미리 측정하고 나서 텅스텐 더미 웨이퍼(dummy wafer) 25장을 실제 lot을 진행하는 것과 동일하게 폴리싱을 하였다. 더미 웨이퍼의 폴리싱이 완료되면 곧 바로 텅스텐 연마속도를 구하여 컨디셔닝에 의한 효과를 확인하였다. 이하, 상기 실험을 3차에 걸쳐 실행한 표이다.At this time, the polishing rate of tungsten was measured in advance, and then 25 tungsten dummy wafers were polished in the same manner as the actual lot. As soon as polishing of the dummy wafer was completed, the tungsten polishing rate was calculated to confirm the effect of conditioning. The following table is a table in which the experiment is carried out three times.
[표 1]TABLE 1
[표 2]TABLE 2
[표 1]은 본 발명에 의한 연마패드 컨디셔너에 의해서 컨디셔닝을 진행한 결과이며, [표 2]는 일반적인 조건에서 컨디셔닝을 진행한 결과를 나타낸 것이다. 여기서, 연마속도는 Å/min, 연마균일도는 ％ 단위를 사용한다.Table 1 shows the results of conditioning by the polishing pad conditioner according to the present invention, and Table 2 shows the results of conditioning under normal conditions. Here, the polishing rate is kPa / min, and the polishing uniformity uses a unit of%.
이상, 본 실시예에서 알 수 있듯이, 본 발명에 의한 브러시(50)를 이용한 연마패드 컨디셔너와 이를 이용한 연마패드 컨디셔닝 방법으로 연마패드를 최적화한 결과, 텅스텐 연마속도가 200Å/min 이내로 조절되므로 매우 안정적인 공정조건을 확보할 수 있음을 알 수 있다.As can be seen from the present embodiment, as a result of optimizing the polishing pad by the polishing pad conditioner using the brush 50 and the polishing pad conditioning method using the same according to the present invention, the tungsten polishing rate is controlled to within 200 μs / min, which is very stable. It can be seen that process conditions can be obtained.
상술한 바와 같이, 본 발명에 따른 CMP시 연마균일도가 향상되므로 전기적 특성이 양호한 반도체 소자를 제조할 수 있으며, 후속 공정으로 넓은 윈도우를 확보할 수 있다. 또한, 종래의 다이아몬드를 대체하므로 비용이 저렴하여 반도체 기판의 생산원가를 절감시킬 수 있으며, 연마패드 사용기간이 길어진다는 장점도 있다.As described above, since the polishing uniformity during CMP according to the present invention is improved, a semiconductor device having good electrical characteristics can be manufactured, and a wide window can be secured by a subsequent process. In addition, since the conventional diamond is replaced, the cost is low, and thus the production cost of the semiconductor substrate can be reduced, and the use period of the polishing pad is long.
Claims (7)
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019980062513A KR20010008429A (en) | 1998-12-30 | 1998-12-30 | Polishing pad conditioner and polishing pad conditioning method using the same |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12341015B2 (en) | 2021-11-26 | 2025-06-24 | Samsung Electronics Co., Ltd. | Apparatus for polishing a wafer and method for fabricating a semiconductor device using the same |
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| JPH01300523A (en) * | 1988-05-27 | 1989-12-05 | Nec Corp | Polishing device by suction system |
| KR940008017A (en) * | 1992-09-24 | 1994-04-28 | 후지무라 히로유끼 | Polishing device |
| JPH1050643A (en) * | 1996-07-30 | 1998-02-20 | Nec Corp | Manufacture of semiconductor device |
| KR980012155A (en) * | 1996-07-24 | 1998-04-30 | 김광호 | Pad conditioner |
| KR19980015770A (en) * | 1996-08-23 | 1998-05-25 | 김광호 | Chemical mechanical polishing apparatus |
| JPH11204469A (en) * | 1997-12-29 | 1999-07-30 | Samsung Electron Co Ltd | Pad cleaning system and cleaning method for semiconductor manufacturing equipment |
| KR20000019355A (en) * | 1998-09-10 | 2000-04-06 | 윤종용 | Cmp apparatus and driving method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01300523A (en) * | 1988-05-27 | 1989-12-05 | Nec Corp | Polishing device by suction system |
| KR940008017A (en) * | 1992-09-24 | 1994-04-28 | 후지무라 히로유끼 | Polishing device |
| KR980012155A (en) * | 1996-07-24 | 1998-04-30 | 김광호 | Pad conditioner |
| JPH1050643A (en) * | 1996-07-30 | 1998-02-20 | Nec Corp | Manufacture of semiconductor device |
| KR19980015770A (en) * | 1996-08-23 | 1998-05-25 | 김광호 | Chemical mechanical polishing apparatus |
| JPH11204469A (en) * | 1997-12-29 | 1999-07-30 | Samsung Electron Co Ltd | Pad cleaning system and cleaning method for semiconductor manufacturing equipment |
| KR20000019355A (en) * | 1998-09-10 | 2000-04-06 | 윤종용 | Cmp apparatus and driving method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US12341015B2 (en) | 2021-11-26 | 2025-06-24 | Samsung Electronics Co., Ltd. | Apparatus for polishing a wafer and method for fabricating a semiconductor device using the same |
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