KR19990041452U - Vacuum Organic Piping System for Semiconductor Manufacturing - Google Patents
Vacuum Organic Piping System for Semiconductor Manufacturing Download PDFInfo
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- KR19990041452U KR19990041452U KR2019980008312U KR19980008312U KR19990041452U KR 19990041452 U KR19990041452 U KR 19990041452U KR 2019980008312 U KR2019980008312 U KR 2019980008312U KR 19980008312 U KR19980008312 U KR 19980008312U KR 19990041452 U KR19990041452 U KR 19990041452U
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 239000004065 semiconductor Substances 0.000 title claims abstract description 6
- 238000005086 pumping Methods 0.000 claims abstract description 88
- 238000005137 deposition process Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 13
- 230000001276 controlling effect Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
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Abstract
본 고안은 저압증착 공정을 위한 진공 유기용 배관시스템의 구조 개선을 통해 반응챔버 및 펌프에 손상을 주지 않는 범위에서 최대한 빠른 시간내에 반응챔버 내부의 압력을 원하는 진공압으로 만들 수 있도록하여 보다 빠른 공정진행이 가능하도록 한 것이다.The present invention improves the structure of the vacuum organic piping system for the low pressure deposition process, so that the pressure inside the reaction chamber can be made to the desired vacuum pressure as quickly as possible within the range that does not damage the reaction chamber and the pump. It is possible to proceed.
이를 위해, 본 고안은 반응챔버(1)와, 상기 반응챔버(1)에 연결되는 주펌핑 배관라인(2)과, 상기 주펌핑 배관라인(2) 상에 설치되는 펌프(3)와, 상기 주펌핑 배관라인(2) 상에 상기 주펌핑 배관라인을 바이패스하도록 연결되는 보조펌핑 배관라인(4)을 구비한 진공유기용 배관시스템에 있어서; 상기 주펌핑 배관라인(2)상에, 상기 보조펌핑 배관라인(4)보다 유로단면적이 큰 중간펌핑 배관라인(5)을 바이패스하도록 연결하고, 상기 중간펌핑 배관라인(5) 상에는 유로를 개폐하는 중간밸브(6) 및 유로의 개폐량을 조절하는 니이들 밸브(7)를 설치하여서 됨을 특징으로 하는 반도체 제조를 위한 진공 유기용 배관시스템이 제공된다.To this end, the present invention is the reaction chamber (1), the main pumping pipe line (2) connected to the reaction chamber (1), the pump (3) installed on the main pumping pipe line (2), and A vacuum organic piping system having an auxiliary pumping piping line (4) connected to bypass the main pumping piping line on the main pumping piping line (2); On the main pumping pipe line 2, the intermediate pumping pipe line 5 having a larger flow path cross section than the auxiliary pumping pipe line 4 is bypassed, and the flow path is opened and closed on the intermediate pumping pipe line 5. There is provided a vacuum organic piping system for semiconductor manufacturing, characterized in that the intermediate valve 6 and the needle valve (7) for adjusting the opening and closing amount of the flow path.
Description
본 고안은 반도체 제조를 위한 진공 유기용 배관시스템에 관한 것으로서, 더욱 상세하게는 저압증착 공정을 위한 진공 유기용 배관시스템의 구조 개선을 통해 반응챔버 및 펌프에 손상을 주지 않는 범위에서 최대한 빠른 시간내에 반응챔버(1) 내부의 압력을 원하는 진공압으로 만들 수 있도록 한 것이다.The present invention relates to a vacuum organic piping system for semiconductor manufacturing, and more particularly, to improve the structure of the vacuum organic piping system for the low pressure deposition process through a structure that does not damage the reaction chamber and pump as soon as possible The pressure inside the reaction chamber 1 can be made to a desired vacuum pressure.
일반적으로, 종래의 저압증착용 반응챔버(1)에는 도 1에 나타낸 바와 같이 반응챔버 내부에 진공압을 유기할 수 있도록 하기 위한 펌프(3)에 연결되는 주펌핑 배관라인(2)이 연결되고, 상기 주펌핑 배관라인(2) 상에는 주펌핑 배관라인을 통한 펌핑전에 반응챔버(1)의 압력을 일정수준까지 떨어뜨려주는 역할을 하는 보조펌핑 배관라인(4)이 연결된다.In general, the conventional low pressure deposition reaction chamber (1) is connected to the main pumping piping line (2) connected to the pump (3) to induce a vacuum pressure inside the reaction chamber as shown in FIG. On the main pumping pipe line 2, an auxiliary pumping pipe line 4 is connected to serve to lower the pressure of the reaction chamber 1 to a predetermined level before pumping through the main pumping pipe line.
또한, 상기 주펌핑 배관라인(2) 상에는 필터(8)와 주밸브(9) 및, 자동압력 조절밸브(10)가 차례로 설치된다.In addition, on the main pumping pipe line 2, a filter 8, a main valve 9, and an automatic pressure regulating valve 10 are sequentially installed.
그리고, 상기 보조펌핑 배관라인(4) 상에는 보조펌핑 배관라인의 개폐를 제어하는 보조밸브(11)와 배관라인의 개폐량을 제어하는 니이들 밸브(12)가 설치된다.On the auxiliary pumping pipe line 4, an auxiliary valve 11 for controlling the opening and closing of the auxiliary pumping pipe line and a needle valve 12 for controlling the opening and closing amount of the pipe line are installed.
이와 같이 구성된 종래의 진공유기 배관시스템을 이용한 진공 유기시에는 주펌핑 배관라인(2)을 닫은 상태에서 보조펌핑 배관라인(4)을 통해 압력을 소정의 압력까지 떨어뜨린 후, 보조펌핑 배관라인(4)을 닫고 주펌핑 배관라인(2)을 열어 반응챔버(1) 내부의 압력을 공정진행을 위한 소정의 압력값까지 떨어뜨리게 된다.In the vacuum induction using the conventional vacuum organic piping system configured as described above, after the main pumping pipe line 2 is closed, the pressure is dropped to a predetermined pressure through the auxiliary pumping pipe line 4, and then the auxiliary pumping pipe line ( 4) Close and open the main pumping pipe line (2) to drop the pressure inside the reaction chamber (1) to a predetermined pressure value for the process progress.
상기한 진공 유기과정을 보다 구체적으로 설명하면 후술하는 바와 같다.The above-described vacuum organic process will be described in detail below.
먼저, 반응챔버(1) 내부의 최초 압력이 대기압(약 101,300 pascal)이므로 주펌핑 배관라인(2)을 닫고 보조펌핑 배관라인(4)을 열은 상태에서 펌프(3)를 구동시켜 반응챔버(1) 내부의 압력을 1,200 pascal 까지 일차적으로 낮추어 주게 된다.First, since the initial pressure inside the reaction chamber 1 is atmospheric pressure (about 101,300 pascal), the pump 3 is driven while the main pumping pipe line 2 is closed and the auxiliary pumping pipe line 4 is opened. 1) The internal pressure is first lowered to 1,200 pascal.
이에 따라, 반응챔버(1) 내부의 압력은 상기한 값(1,200 pascal)에 도달할 때까지 서서히 떨어지게 된다.Accordingly, the pressure inside the reaction chamber 1 gradually falls until the above value (1,200 pascal) is reached.
그 후, 보조펌핑 배관라인(4)을 닫고, 주펌핑 배관라인(2)의 주밸브(9)를 열어 주펌핑 배관라인(2)을 통해 펌핑하므로써 반응챔버(1)의 압력을 공정진행에 적합한 압력값인 약 10-2pascal 까지 낮추게 된다.Thereafter, the auxiliary pumping pipe line 4 is closed, and the main valve 9 of the main pumping pipe line 2 is opened and pumped through the main pumping pipe line 2 so as to adjust the pressure of the reaction chamber 1 to the process progress. Lower the pressure to about 10 -2 pascal.
이와 같이 반응챔버(1) 내부의 압력을 공정진행에 적합한 압력으로 떨어뜨리기 위해 2단계에 걸쳐 압력을 낮추는 이유는, 주펌핑 배관라인(2)만을 이용하여 반응챔버(1) 내부의 압력을 공정진행에 필요한 압력까지 떨어뜨릴 경우 발생하는 반응챔버(1)의 오염 및 펌프(3) 손상 등을 방지하기 위함이다.The reason for lowering the pressure in two stages in order to lower the pressure inside the reaction chamber 1 to a pressure suitable for process progress is to process the pressure inside the reaction chamber 1 using only the main pumping pipe line 2. This is to prevent contamination of the reaction chamber 1 and damage to the pump 3 that occur when the pressure required to proceed is reduced.
여기서, 반응챔버(1)의 오염이란 처음부터 갑자기 강한 진공압이 걸릴 경우 역류에 의해 파티클이 반응챔버(1) 내부로 유입되어 반응챔버 내부를 오염시키게 되는 현상을 말하며, 펌프(3)에 가해지는 손상이란 펌프(3)에 걸리는 과부하로 인해 발생하는 펌프의 이상 및 수명저하 등을 말한다.Here, the contamination of the reaction chamber 1 refers to a phenomenon in which particles are introduced into the reaction chamber 1 by the reverse flow and contaminate the inside of the reaction chamber when a sudden strong vacuum pressure is applied from the beginning. Loss of damage refers to an abnormality of the pump and a decrease in service life caused by an overload on the pump 3.
즉, 우선 배관의 유로 단면적이 작은 보조펌핑라인을 이용하여 서서히 압력을 약 1,200 pascal 까지 떨어뜨린 후, 배관의 유로 단면적이 보다 큰 주펌핑 배관라인(2)을 이용하여 공정진행 압력인 10-2pascal 까지 떨어뜨리면 펌프(3) 및 반응챔버(1)에 가해지는 손상을 최소화 할 수 있게 된다.That is, first, the pressure is gradually reduced to about 1,200 pascal by using an auxiliary pump line having a small flow path cross section of the pipe, and then the process pressure 10 -2 , which is a process progress pressure, by using the main pumping pipe line 2 having a larger flow path cross section of the pipe. Dropping to the pascal minimizes damage to the pump 3 and the reaction chamber 1.
그러나, 이와 같이 종래의 저압증착을 위한 진공 유기용 배관시스템은 반응챔버(1) 및 펌프(3)에 가해지는 손상을 방지하기 위하여 보조펌핑 배관라인(4)을 이용하여 반응챔버(1) 내의 압력을 1차적으로 대기압 상태에서 약 1,200 pascal이 될 때까지 낮추어야 하는데, 압력이 대기압에서 10,000 파스칼로 될 때 까지는 짧은 시간이 소요되지만 10,000 파스칼에서 1,200 파스칼로 될 때 까지는 많은 시간이 소요되는 단점이 있었다.However, the conventional vacuum organic piping system for low pressure deposition is thus used in the reaction chamber 1 by using an auxiliary pumping piping line 4 to prevent damage to the reaction chamber 1 and the pump 3. The pressure must be lowered first to about 1,200 pascal at atmospheric pressure, but it takes a short time until the pressure reaches 10,000 pascals at atmospheric pressure, but it takes a long time to reach 10,000 pascals to 10,000 pascals. .
즉, 압력저하에 많은 시간이 소요되는 만큼, 저압증착공정의 총처리시간이 늘어나게 되므로 생산성을 저하시키게 되는 문제점이 있었다.That is, as much time is required for the pressure drop, the total treatment time of the low pressure deposition process is increased, thereby reducing the productivity.
본 고안은 상기한 제반 문제점을 해결하기 위한 것으로서, 저압증착 공정을 위한 진공 유기용 배관시스템의 구조 개선을 통해 반응챔버 및 펌프에 손상을 주지 않는 범위에서 최대한 빠른 시간내에 반응챔버 내부의 압력을 원하는 진공압으로 만들 수 있도록하여 보다 빠른 공정진행이 가능하도록 한 반도체 제조를 위한 진공 유기용 배관시스템을 제공하는데 그 목적이 있다.The present invention is to solve the above problems, and through the improvement of the structure of the vacuum organic piping system for the low pressure deposition process, the pressure in the reaction chamber as soon as possible in the range that does not damage the reaction chamber and pump desired It is an object of the present invention to provide a vacuum organic piping system for semiconductor manufacturing, which enables the process to be made faster by the vacuum pressure.
도 1은 종래의 진공 유기용 배관시스템을 나타낸 구성도1 is a configuration diagram showing a conventional vacuum organic piping system
도 2는 본 고안의 진공 유기용 배관시스템을 나타낸 구성도2 is a block diagram showing a vacuum organic piping system of the present invention
도면의 주요부분에 대한 부호의 설명Explanation of symbols for main parts of the drawings
1:반응챔버 2:주펌핑 배관라인1: Reaction chamber 2: Main pumping piping line
3:펌프 4:보조펌핑 배관라인3: Pump 4: Auxiliary Pump Piping Line
5:중간펌핑 배관라인 6:중간밸브5: Intermediate pumping piping line 6: Intermediate valve
7:니이들 밸브 8:필터7: needle valve 8: filter
9:주밸브 10:자동압력 조절밸브9: Main valve 10: Automatic pressure regulating valve
11:보조밸브 12:니이들 밸브11: Auxiliary Valve 12: Needle Valve
상기한 목적을 달성하기 위해, 본 고안은 반응챔버와, 상기 반응챔버에 연결되는 주펌핑 배관라인과, 상기 주펌핑 배관라인 상에 설치되는 펌프와, 상기 주펌핑 배관라인 상에 상기 주펌핑 배관라인을 바이패스하도록 연결되는 보조펌핑 배관라인을 구비한 진공유기용 배관시스템에 있어서; 상기 주펌핑 배관라인상에, 상기 보조펌핑 배관라인보다 유로단면적이 큰 중간펌핑 배관라인을 바이패스하도록 연결하고, 상기 중간펌핑 배관라인 상에는 유로를 개폐하는 중간밸브 및 유로의 개폐량을 조절하는 니이들 밸브를 설치하여서 됨을 특징으로 하는 반도체 제조를 위한 진공 유기용 배관시스템이 제공된다.In order to achieve the above object, the present invention provides a reaction chamber, a main pumping pipe line connected to the reaction chamber, a pump installed on the main pumping pipe line, and the main pumping pipe on the main pumping pipe line. A vacuum organic piping system having an auxiliary pumping piping line connected to bypass a line; The main pumping pipe line is connected to bypass the intermediate pumping pipe line having a larger flow path cross section than the auxiliary pumping pipe line, and the intermediate valve for opening and closing the flow path on the intermediate pumping pipe line and the opening and closing amount of the flow path are adjusted. Provided is a vacuum organic piping system for semiconductor manufacturing, characterized in that these valves are provided.
이하, 본 고안의 일실시예를 첨부도면 도 2를 참조하여 상세히 설명하면 다음과 같다.Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
도 2는 본 고안의 진공 유기용 배관시스템을 나타낸 구성도로서, 본 고안은 반응챔버(1)와, 상기 반응챔버(1)에 연결되는 주펌핑 배관라인(2)과, 상기 주펌핑 배관라인(2) 상에 설치되는 펌프(3)와, 상기 주펌핑 배관라인(2) 상에 상기 주펌핑 배관라인을 바이패스하도록 연결되는 보조펌핑 배관라인(4)을 구비한 진공유기용 배관시스템에 있어서; 상기 주펌핑 배관라인(2)상에, 상기 보조펌핑 배관라인(4)보다 유로단면적이 큰 중간펌핑 배관라인(5)이 상기 주펌핑 배관라인(2)을 바이패스하여 연결되고, 상기 중간펌핑 배관라인(5) 상에는 유로를 개폐하는 중간밸브(6) 및 유로의 개폐량을 조절하는 니이들 밸브(7)가 설치되어 구성된다.2 is a configuration diagram showing a vacuum organic piping system of the present invention, the present invention is the reaction chamber 1, the main pumping pipe line (2) connected to the reaction chamber 1, and the main pumping pipe line (2) to a vacuum organic piping system having a pump (3) installed on the secondary pumping pipe line (4) connected to bypass the main pumping pipe line on the main pumping pipe line (2). In; On the main pumping pipe line (2), an intermediate pumping pipe line (5) having a larger flow passage cross-sectional area than the auxiliary pumping pipe line (4) is connected to bypass the main pumping pipe line (2), and the intermediate pumping An intermediate valve 6 for opening and closing the flow path and a needle valve 7 for adjusting the opening and closing amount of the flow path are provided on the pipe line 5.
한편, 상기 주펌핑 배관라인(2) 상에는 필터(8)와 주밸브(9) 및, 자동압력 조절밸브(10)가 차례로 설치되고, 상기 보조펌핑 배관라인(4) 상에는 보조펌핑 배관라인의 개폐를 제어하는 보조밸브(11)와 배관라인의 개폐량을 제어하는 니이들 밸브(12)가 각각 설치됨은 전술한 종래기술과 동일하다.On the other hand, a filter 8, a main valve 9, and an automatic pressure regulating valve 10 are sequentially installed on the main pumping pipe line 2, and on the auxiliary pumping pipe line 4, opening and closing of the auxiliary pumping pipe line is performed. The auxiliary valve 11 for controlling and the needle valve 12 for controlling the opening / closing amount of the pipe line are installed in the same manner as in the above-described conventional technology.
이와 같이 구성된 본 고안의 작용은 다음과 같다.The operation of the present invention configured as described above is as follows.
본 고안의 진공유기 배관시스템을 이용한 진공 유기시에는 주펌핑 배관라인(2) 및 중간펌핑 배관라인(5)을 닫은 상태에서 보조펌핑 배관라인(4)을 이용하여 일정값까지 1차적으로 압력을 떨어 뜨리고, 다시 중간펌핑 배관라인(5)을 이용하여 2차적으로 압력을 일정값까지 떨어뜨린 후, 중간 배관라인을 닫고 주펌핑 배관라인(2)을 열어 반응챔버(1) 내부의 압력을 공정진행을 위한 소정의 압력값까지 떨어뜨리게 된다.In the vacuum induction using the vacuum organic piping system of the present invention, the primary pumping pipe line (2) and the intermediate pumping pipe line (5) in the closed state by using the auxiliary pumping pipe line (4) to the first pressure up to a certain value The pressure was dropped to the predetermined value by using the intermediate pumping pipe line (5) again, and then the pressure inside the reaction chamber (1) was closed by closing the intermediate pipe line and opening the main pumping pipe line (2). The pressure drops to a predetermined pressure value for progression.
상기한 진공 유기과정을 보다 구체적으로 설명하면 후술하는 바와 같다.The above-described vacuum organic process will be described in detail below.
먼저, 반응챔버(1) 내부의 최초 압력이 대기압(약 101,300 pascal)이므로 주펌핑 배관라인(2) 및 중간펌핑 배관라인(5)을 닫고 보조펌핑 배관라인(4)을 열은 상태에서 펌프(3)를 구동시켜 반응챔버(1) 내부의 압력을 일정값까지 1차적으로 낮추어 주게 된다.First, since the initial pressure in the reaction chamber 1 is atmospheric pressure (about 101,300 pascal), the main pumping pipe line 2 and the intermediate pumping pipe line 5 are closed and the auxiliary pumping pipe line 4 is opened. By driving 3), the pressure inside the reaction chamber 1 is primarily lowered to a predetermined value.
보조펌핑 배관라인(4)을 통한 펌핑시, 반응챔버(1) 내부의 압력은 1차적으로 약 10,000 파스칼로 떨어지게 된다.When pumping through the auxiliary pumping line 4, the pressure inside the reaction chamber 1 drops to approximately 10,000 Pascals primarily.
이 때, 압력이 1차적으로 10,000 파스칼로 떨어지게 되는데는 별로 많지 않은 시간이 소요되며, 펌프(3) 및 반응챔버(1)에 손상을 주지않게 된다.At this time, it takes a very long time for the pressure to drop to 10,000 Pascal primarily, and does not damage the pump 3 and the reaction chamber 1.
보조펌핑 배관라인(4)을 이용한 펌핑 후에는, 보조펌핑 배관라인(4)을 닫고 중간펌핑 배관라인(5)의 중간밸브(6)를 열어 중간펌핑 배관라인(5)을 통해 펌핑하므로써 반응챔버(1)의 압력을 2차적으로 약 500 파스칼까지 낮추게 된다.After the pumping using the auxiliary pumping pipe line 4, the reaction chamber is closed by closing the auxiliary pumping pipe line 4 and opening the intermediate valve 6 of the intermediate pumping pipe line 5 to pump through the intermediate pumping pipe line 5. The pressure in (1) is secondarily lowered to about 500 pascals.
그 후, 중간펌핑 배관라인(5)을 닫고, 주펌핑 배관라인(2)의 주밸브(9)를 열어 주펌핑 배관라인(2)을 통해 펌핑하므로써 반응챔버(1)의 압력을 공정진행에 적합한 압력값인 약 10-2pascal 까지 낮추게 된다.Thereafter, the intermediate pumping pipe line 5 is closed, and the main valve 9 of the main pumping pipe line 2 is opened and pumped through the main pumping pipe line 2 so that the pressure of the reaction chamber 1 is suitable for process progress. Lower the pressure to about 10 -2 pascal.
이에 따라, 본 고안에서는 보조펌핑 배관라인(4)을 통해 펌핑하여 압력을 대기압에서 공진진행시의 압력인 약 10-2pascal로 떨어뜨릴 때에 비해 보다 빠른 시간내에 압력을 떨어뜨릴 수 있게 된다.Accordingly, in the present invention, by pumping through the auxiliary pumping pipe line 4, it is possible to drop the pressure in a faster time than when the pressure drops from atmospheric pressure to about 10 -2 pascal, which is the pressure at the time of resonance progress.
이는, 종래와 같이 보조펌핑 배관라인(4)을 이용한 경우, 반응챔버(1)의 압력을 10,000 파스칼에서 1,200 파스칼까지 떨어 뜨리는데 걸리는 시간보다, 중간펌핑 배관라인(5)을 이용하여 압력값을 10,000 파스칼에서 500 파스칼로 떨어뜨리는데 걸리는 시간이 훨씬 짧기 때문이다.In the case of using the auxiliary pumping pipe line 4 as in the related art, the pressure value is reduced by using the intermediate pumping pipe line 5 than the time taken to drop the pressure of the reaction chamber 1 from 10,000 pascal to 1,200 pascal. That's because the time it takes to drop from 10,000 Pascals to 500 Pascals is much shorter.
이와 같이 반응챔버(1) 내부의 압력을 공정진행에 적합한 압력으로 떨어뜨리기 위해 3단계에 걸쳐 압력을 낮추는 이유는, 주펌핑 배관라인(2)만을 이용하여 반응챔버(1) 내부의 압력을 공정진행에 필요한 압력까지 떨어뜨릴 경우 발생하는 파티클 역류로 인한 반응챔버의 오염 및 펌프의 손상 등을 방지하기 위함임은 종래기술에서 서술한 바와 동일하다.The reason for lowering the pressure in three stages in order to lower the pressure inside the reaction chamber 1 to a pressure suitable for process progress is to process the pressure inside the reaction chamber 1 using only the main pumping pipe line 2. The purpose of the present invention is to prevent contamination of the reaction chamber and damage to the pump due to particle backflow generated when the pressure required to proceed is reduced.
한편, 상기한 보조펌핑 배관라인(4)과, 중간펌핑 배관라인(5)과, 주펌핑 배관라인(2)의 유로단면적 비는 대략 1 : 1.3 : 3.9로 함이 적당하다.On the other hand, the flow path cross-sectional ratio of the auxiliary pumping pipe line 4, the intermediate pumping pipe line 5, and the main pumping pipe line 2 is preferably 1: 1.3: 3.9.
이상에서와 같이, 본 고안은 저압증착 공정을 위한 진공 유기용 배관시스템의 구조를 개선한 것이다.As described above, the present invention is to improve the structure of the vacuum organic piping system for the low pressure deposition process.
이를 통해, 본 고안은 반응챔버(1) 및 펌프(3)에 손상을 주지 않는 범위에서 최대한 빠른 시간내에 반응챔버(1) 내부의 압력을 원하는 진공압으로 만들 수 있게 되며, 이에 따라 보다 빠른 공정진행이 가능하게 되므로써 생산성을 향상시킬 수 있는 효과를 거둘 수 있게 된다.Through this, the present invention can make the pressure inside the reaction chamber 1 to the desired vacuum pressure as quickly as possible within the range that does not damage the reaction chamber 1 and the pump 3, and thus a faster process As it progresses, productivity can be improved.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019980008312U KR200212869Y1 (en) | 1998-05-19 | 1998-05-19 | pipe arrangement system for inducing vacuum in fabrication of semiconductor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019980008312U KR200212869Y1 (en) | 1998-05-19 | 1998-05-19 | pipe arrangement system for inducing vacuum in fabrication of semiconductor |
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| Publication Number | Publication Date |
|---|---|
| KR19990041452U true KR19990041452U (en) | 1999-12-15 |
| KR200212869Y1 KR200212869Y1 (en) | 2001-03-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019980008312U Expired - Fee Related KR200212869Y1 (en) | 1998-05-19 | 1998-05-19 | pipe arrangement system for inducing vacuum in fabrication of semiconductor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100697280B1 (en) * | 2005-02-07 | 2007-03-20 | 삼성전자주식회사 | Pressure regulating method of semiconductor manufacturing equipment |
| KR100899128B1 (en) * | 2008-06-17 | 2009-05-25 | 박종하 | Vacuumpump with a built in gas saver for semiconductor |
-
1998
- 1998-05-19 KR KR2019980008312U patent/KR200212869Y1/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100697280B1 (en) * | 2005-02-07 | 2007-03-20 | 삼성전자주식회사 | Pressure regulating method of semiconductor manufacturing equipment |
| KR100899128B1 (en) * | 2008-06-17 | 2009-05-25 | 박종하 | Vacuumpump with a built in gas saver for semiconductor |
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| Publication number | Publication date |
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| KR200212869Y1 (en) | 2001-03-02 |
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