KR19990031430A - Manufacturing Method of Semiconductor Device - Google Patents
Manufacturing Method of Semiconductor Device Download PDFInfo
- Publication number
- KR19990031430A KR19990031430A KR1019970052140A KR19970052140A KR19990031430A KR 19990031430 A KR19990031430 A KR 19990031430A KR 1019970052140 A KR1019970052140 A KR 1019970052140A KR 19970052140 A KR19970052140 A KR 19970052140A KR 19990031430 A KR19990031430 A KR 19990031430A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- semiconductor device
- film
- copper wiring
- aluminum film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 22
- 239000010949 copper Substances 0.000 claims abstract description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052802 copper Inorganic materials 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 238000004381 surface treatment Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 230000003064 anti-oxidating effect Effects 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 구리 배선상의 알루미늄막 두께에 관계없이 상기 구리 배선의 산화를 방지하는 반도체 소자의 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device which prevents oxidation of the copper wiring regardless of the thickness of the aluminum film on the copper wiring.
본 발명의 반도체 소자의 제조 방법은 구리 배선상에 알루미늄막을 형성하는 단계와, 상기 알루미늄막을 질소화 시키는 단계를 포함하여 이루어짐을 특징으로 한다.The method of manufacturing a semiconductor device of the present invention is characterized by comprising the step of forming an aluminum film on the copper wiring, and the step of nitrogenizing the aluminum film.
Description
본 발명은 반도체 소자의 제조 방법에 관한 것으로, 특히 구리 배선의 산화를 방지하는 반도체 소자의 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for manufacturing a semiconductor device for preventing oxidation of copper wiring.
종래의 기술에 따른 반도체 소자의 제조 방법은 도 1a에서와 같이, 구리(Cu) 배선(11)상에 CVD(Chemical Vapour Deposition) 공정에 의하여 알루미늄(Al)막(12)을 형성한다.In the method of manufacturing a semiconductor device according to the related art, as shown in FIG. 1A, an aluminum (Al) film 12 is formed on a copper (Cu) wiring 11 by a chemical vapor deposition (CVD) process.
여기서, 상기 알루미늄막(12)을 100Å이하의 두께로 형성한다.Here, the aluminum film 12 is formed to a thickness of 100 kPa or less.
도 1b에서와 같이, 전면을 열처리하므로 상기 알루미늄막(12)을 산화시켜 산화 알루미늄(Al2O3)막(13)으로 변환시킨다.As shown in FIG. 1B, since the entire surface is heat-treated, the aluminum film 12 is oxidized and converted into an aluminum oxide (Al 2 O 3 ) film 13.
여기서, 상기 산화 알루미늄막(13)은 상기 구리 배선(11)의 산화 방지막으로써 역할을 한다.Here, the aluminum oxide film 13 serves as an anti-oxidation film of the copper wiring 11.
그러나 종래의 반도체 소자의 제조 방법은 구리 배선의 산화 방지막으로 산화 알루미늄막의 형성 공정에서, 상기 구리 배선상의 알루미늄막 두께가 얇으면 상기 산화 알루미늄막이 상기 구리 배선의 산화 방지막으로서 역할을 하지 못하므로, 상기 구리 배선이 산화되는 문제점이 있었다.However, in the conventional method of manufacturing a semiconductor device, in the step of forming an aluminum oxide film as an anti-oxidation film of copper wiring, if the aluminum film thickness on the copper wiring is thin, the aluminum oxide film does not play a role as an anti-oxidation film of the copper wiring. There was a problem that copper wiring was oxidized.
본 발명은 상기의 문제점을 해결하기 위해 안출한 것으로 구리 배선상의 알루미늄막 두께에 관계없이 상기 구리 배선의 산화를 방지하는 반도체 소자의 제조 방법을 제공하는데 그 목적이 있다.The present invention has been made to solve the above problems, and an object thereof is to provide a method of manufacturing a semiconductor device which prevents oxidation of the copper wiring regardless of the thickness of the aluminum film on the copper wiring.
도 1a와 도 1b는 종래의 기술에 따른 반도체 소자의 제조 방법을 나타낸 공정 단면도1A and 1B are cross-sectional views illustrating a method of manufacturing a semiconductor device according to the related art.
도 2a와 도 2b는 본 발명의 실시예에 따른 반도체 소자의 제조 방법을 나타낸 공정 단면도2A and 2B are cross-sectional views illustrating a method of manufacturing a semiconductor device in accordance with an embodiment of the present invention.
도면의 주요부분에 대한 부호의 설명Explanation of symbols for main parts of the drawings
31: 구리 배선 32: 알루미늄막31: copper wiring 32: aluminum film
33: 질화 알루미늄막33: aluminum nitride film
본 발명의 반도체 소자의 제조 방법은 구리 배선상에 알루미늄막을 형성하는 단계와, 상기 알루미늄막을 질소화 시키는 단계를 포함하여 이루어짐을 특징으로 한다.The method of manufacturing a semiconductor device of the present invention is characterized by comprising the step of forming an aluminum film on the copper wiring, and the step of nitrogenizing the aluminum film.
상기와 같은 본 발명에 따른 반도체 소자의 제조 방법의 바람직한 실시예를 첨부된 도면을 참조하여 상세히 설명하면 다음과 같다.Referring to the accompanying drawings, preferred embodiments of the method for manufacturing a semiconductor device according to the present invention as described above in detail as follows.
본 발명의 실시예에 따른 반도체 소자의 제조 방법은 도 2a에서와 같이, 구리 배선(31)상에 CVD 공정에 의하여 알루미늄막(32)을 형성한다.In the method of manufacturing a semiconductor device according to an embodiment of the present invention, as shown in FIG. 2A, an aluminum film 32 is formed on a copper wiring 31 by a CVD process.
여기서, 상기 알루미늄막(32)을 100Å미만의 두께로 형성하며, 상기 알루미늄막(32)의 다른 형성 방법으로 PVD(Physical Vapor Deposition) 공정이 있다.Here, the aluminum film 32 is formed to a thickness of less than 100 μs, and another method of forming the aluminum film 32 is a PVD (Physical Vapor Deposition) process.
도 2b에서와 같이, 전면에 질소(N2) 플라즈마를 사용하여 표면 처리하므로 상기 알루미늄막(32)을 질소화하여 질화 알루미늄(AlN)막(33)으로 변환한다.As shown in FIG. 2B, since the surface is treated using nitrogen (N 2 ) plasma on the entire surface, the aluminum film 32 is nitrogenized and converted into an aluminum nitride (AlN) film 33.
여기서, 상기 질화 알루미늄막(33) 상기 구리 배선(31)의 산화 방지막으로써 역할을 한다.Here, the aluminum nitride film 33 serves as an anti-oxidation film of the copper wiring 31.
본 발명의 반도체 소자의 제조 방법은 구리 배선의 산화 방지막으로써 질화 알루미늄막을 형성하므로, 상기 구리 배선상의 알루미늄막 두께에 관계없이 상기 질화 알루미늄막이 상기 구리 배선의 산화 방지막으로써 역할을 하여 상기 구리 배선의 산화를 방지하는 효과가 있다.In the method for manufacturing a semiconductor device of the present invention, since an aluminum nitride film is formed as an oxidation prevention film of copper wiring, regardless of the thickness of the aluminum film on the copper wiring, the aluminum nitride film serves as an oxidation prevention film of the copper wiring to oxidize the copper wiring. It is effective to prevent.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970052140A KR19990031430A (en) | 1997-10-10 | 1997-10-10 | Manufacturing Method of Semiconductor Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970052140A KR19990031430A (en) | 1997-10-10 | 1997-10-10 | Manufacturing Method of Semiconductor Device |
Publications (1)
Publication Number | Publication Date |
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KR19990031430A true KR19990031430A (en) | 1999-05-06 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019970052140A Ceased KR19990031430A (en) | 1997-10-10 | 1997-10-10 | Manufacturing Method of Semiconductor Device |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020006779A (en) * | 2000-07-13 | 2002-01-26 | 박종섭 | Manufacturing method for metal line in semiconductor device |
KR100420598B1 (en) * | 2001-11-28 | 2004-03-02 | 동부전자 주식회사 | Method for formation copper diffusion barrier a film by using aluminum |
-
1997
- 1997-10-10 KR KR1019970052140A patent/KR19990031430A/en not_active Ceased
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020006779A (en) * | 2000-07-13 | 2002-01-26 | 박종섭 | Manufacturing method for metal line in semiconductor device |
KR100420598B1 (en) * | 2001-11-28 | 2004-03-02 | 동부전자 주식회사 | Method for formation copper diffusion barrier a film by using aluminum |
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