KR19980075050A - Variable aperture of scanning electron microscope - Google Patents
Variable aperture of scanning electron microscope Download PDFInfo
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Abstract
본 발명은 시료에 주사되는 일차전자의 전류량을 용이하게 측정할 수 있도록 하는 주사 전자 현미경의 가변어퍼쳐에 관한 것으로, 본 발명은 소정의 일차전자를 조사하는 필라멘트와, 상기 일차전자를 응집하는 양극판 및 콘덴서어퍼쳐와, 상기 일차전자의 광량 및 방향을 조절하는 콘덴서렌즈 및 편향 코일과, 소정의 보조틀에 감싸진 복수개의 관통공들을 통해 상기 일차전자의 포커스를 조절하는 가변어퍼쳐를 순차적으로 구비한 주사 전자 현미경에 있어서, 상기 관통공들은 소정의 크기만큼 횡축으로 이동되어 상기 일차전자의 주사방향에서 이격됨을 특징으로 한다.The present invention relates to a variable aperture of a scanning electron microscope which can easily measure the amount of current of primary electrons injected into a sample, and the present invention relates to a filament for irradiating predetermined primary electrons and a positive electrode plate which aggregates the primary electrons. And a condenser aperture, a condenser lens and a deflection coil for adjusting the amount and direction of the primary electrons, and a variable aperture for adjusting the focus of the primary electrons through a plurality of through holes wrapped in a predetermined auxiliary frame. In the scanning electron microscope provided, the through holes are moved in the horizontal axis by a predetermined size and are spaced apart from the scanning direction of the primary electrons.
이에 따라 본 발명에서는 주사되는 일차전자의 전류량이 정확히 파악된다.Accordingly, in the present invention, the amount of current of the primary electrons to be scanned is accurately determined.
Description
본 발명은 주사 전자 현미경(SEM: Scaning Electron Microscope)에 관한 것으로, 좀더 상세하는 구비된 가변어퍼쳐(Movable aperture)를 소정의 방향으로 이동시키고, 이동된 당해 가변어퍼쳐에 소정의 전류계를 접속시킴으로써, 시료에 주사되는 일차전자의 전류량을 용이하게 측정할 수 있도록 하는 주사 전자 현미경의 가변어퍼쳐에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning electron microscope (SEM), wherein a more detailed movable aperture (Movable aperture) is moved in a predetermined direction, and a predetermined ammeter is connected to the moved variable aperture. The present invention relates to a variable aperture of a scanning electron microscope for easily measuring the amount of primary electrons scanned in a sample.
최근 들어 생산되는 반도체 웨이퍼에는 높은 신뢰도가 요구되고 있으며, 작업상의 실수로 스펙에서 벗어나는 웨이퍼는 그 사용이 폐기되고 있는 실정이다.Recently, high reliability is required for semiconductor wafers produced, and wafers that deviate from specifications due to operational mistakes are being discarded.
따라서, 작업자들은 웨이퍼가 각 공정 스텝을 통과할 때마다 웨이퍼 특성 파악을 위한 측정을 정밀하게 수행하여, 양질의 제품이 생산될 수 있도록 노력하고 있다.As a result, workers make every effort to ensure high quality products by precisely measuring wafer characteristics as each wafer passes through each process step.
이때, 웨이퍼 특성을 검지하기 위한 통상의 측정장비로써, 주사 전자 현미경이 널리 사용되고 있다.At this time, a scanning electron microscope is widely used as a conventional measuring equipment for detecting wafer characteristics.
도 1은 이러한 기능을 수행하는 종래의 제조 기술에 따른 주사 전자 현미경의 개략적인 형상을 도시한 단면도이다.1 is a cross-sectional view showing a schematic shape of a scanning electron microscope according to a conventional manufacturing technique for performing this function.
도시된 바와 같이, 내부 장비를 보호하고 있는 본체내에는 필라멘트, 양극판(Anode plate), 콘덴서어퍼쳐(Condensor aperture), 콘덴서 렌즈, 편향코일, 가변 어퍼쳐 및 시료홀더가 순차적으로 형성되어 있다.As shown in the drawing, a filament, an anode plate, a condenser aperture, a condenser lens, a deflection coil, a variable aperture, and a sample holder are sequentially formed in the main body protecting the internal equipment.
이와 같이 형성되어 있는 종래의 기술에 따른 주사 전자 현미경의 동작과정을 좀더 상세히 설명한다.The operation of the scanning electron microscope according to the related art formed as described above will be described in more detail.
먼저, 인가되는 하이 볼트, 예컨대, 10Kev-20Kev의 전압에 의해 필라멘트(10) 팁(Tip)에는 일차전자(2)가 집속되어 외부로 조사된다.First, primary electrons 2 are focused and irradiated to the tip of the filament 10 by a voltage of an applied high volt, for example, 10Kev-20Kev.
이와 같이 조사된 일차전자(2)는 양극판(11)에 형성된 슬롯(11a)을 통과하여 본체(1)상에 그라운딩(Grounding )되어있는 콘덴서어퍼쳐(12)에 이른다.The primary electrons 2 irradiated in this way pass through the slots 11a formed in the positive electrode plate 11 to reach the condenser aperture 12 grounded on the main body 1.
이때, 콘덴서어퍼쳐(12)의 구경은 1nm-10nm 정도이며, 조사된 일차전자(2)는 이러한 콘덴서어퍼쳐(12)를 통과하여 응집된다.At this time, the aperture of the condenser aperture 12 is about 1 nm-10 nm, and the irradiated primary electrons 2 aggregate through the condenser aperture 12.
그 후, 일차전자(2)는 응집랜즈(13)에 이르러, 그 광량이 조절된 후에 편향코일(14)에 의해 X, Y 축으로 방향이 조절되고, 그 하단부에 형성된 가변어퍼쳐의 관통공(15a)에 의해 초점(Focus)이 조절되어 시료 홀더(18)상에 올려진 시료(17)에 이른다.After that, the primary electrons 2 reach the coherent lens 13, and after the light amount is adjusted, the direction of the primary electrons 2 is adjusted by the deflection coils 14 in the X and Y axes, and the through holes of the variable apertures formed at the lower ends thereof. The focus is adjusted by 15a to reach the sample 17 placed on the sample holder 18.
이때, 가변어퍼쳐(15)에는 10μm 정도의 관통공(15a)이 복수개, 예컨대, 5개정도 형성되며, 이러한 관통공(15a)은 골드 코팅(Gold coating)된 보조틀(Supporting frame:15b)에 의해 감싸진다.In this case, the variable aperture 15 is formed with a plurality of through holes 15a of about 10 μm, for example, about five, and the through holes 15a have a gold coated supporting frame 15b. Wrapped by
또한, 가변어퍼쳐(15)는 소정의 조절스크류(16)를 통해 X,Y 축으로 이동될 수 있도록 구성된다.In addition, the variable aperture 15 is configured to be movable in the X, Y axis through a predetermined adjustment screw 16.
한편, 주사된 일차전자(2)가 시료(17)의 표면과 충돌하면 시료(17)의 표면에서는 이러한 물리적인 충격에 의해 소정의 이차전자(3)가 발생되어 외부로 방출되고 본체(1)의 외부에 설치된 디텍터(4)는 이러한 방출 이차전자(3)를 감지하여 파악된 시료의 특성을 소정의 스크린(5)상에 디스플레이한다.On the other hand, when the scanned primary electrons 2 collide with the surface of the sample 17, the surface of the sample 17 generates a predetermined secondary electron 3 due to this physical impact and is released to the outside, the main body 1 The detector 4 installed on the outside of the sensor detects the emitted secondary electrons 3 and displays the detected characteristics of the sample on the predetermined screen 5.
그 결과, 작업자는 스크린(5)을 관측하여 공정내에 있는 시료(17)의 특성, 예컨대, 패턴의 형상 등을 쉽게 검지할 수 있고, 시료(17)상에 적절한 추가공정을 시행할 수 있다.As a result, the operator can easily observe the screen 5 to detect the characteristics of the sample 17 in the process, for example, the shape of the pattern, etc., and perform an appropriate additional process on the sample 17.
그런데, 이와 같은 종래의 기술에 다른 주사 전자 현미경에는 몇가지 중대한 문제점이 있다.However, there are some serious problems with the scanning electron microscope which differ from this conventional technique.
첫째, 상술한 일차전자 빔이 시료의 표면과 충돌하는 경우, 시료의 표면은 급속히 대전(Charge-up)되고, 이에 따라, 시료의 표면에서 발생되는 이차전자의 개수에 소정의 오류가 발생됨으로써, 상술한 관측결과의 신뢰성이 급격히 저감되는 문제점이 있다.First, when the above-described primary electron beam collides with the surface of the sample, the surface of the sample is rapidly charged up, whereby a predetermined error occurs in the number of secondary electrons generated on the surface of the sample, There is a problem that the reliability of the above-described observation result is sharply reduced.
둘째, 이러한 문제점을 일으키는 일차전자의 전류량을 파악할 수 있는 방법이 전무하여, 현 설비의 대전 정도를 정확하게 판단할 수 없고, 이에 따라, 적절한 사후대처를 행할 수 없는 문제점이 있다.Second, there is no way to determine the current amount of the primary electron causing such a problem, it is not possible to accurately determine the degree of charging of the current equipment, there is a problem that can not be appropriate after-action.
따라서, 본 발명의 목적은 상술한 가변어퍼쳐의 위치를 소정의 방향으로 이동시켜, 일차전자와 맞닿도록 하고, 소정의 전류계를 이러한 가변어퍼쳐에 접속시킴으로써, 주사되는 일차전자의 전류량을 정확하게 파악할 수 있도록 하는 주사 전자 현미경의 가변어퍼쳐를 제공함에 있다.Accordingly, it is an object of the present invention to accurately grasp the amount of current of primary electrons to be scanned by moving the positions of the above-described variable apertures in a predetermined direction so as to be in contact with the primary electrons, and by connecting a predetermined ammeter to such variable apertures. The present invention provides a variable aperture of a scanning electron microscope.
도 1은 종래의 기술에 따른 주사 전자 현미경의 형상을 개략적으로 도시한 단면도.1 is a cross-sectional view schematically showing the shape of a scanning electron microscope according to the prior art.
도 2는 본 발명에 따른 가변어퍼쳐의 형상을 개략적으로 도시한 단면도.2 is a cross-sectional view schematically showing the shape of the variable aperture according to the present invention.
상기와 같은 목적을 달성하기 위한 본 발명은 소정의 일차전자를 조사하는 필라멘트와, 상기 일차전자를 응집하는 양극판 및 콘덴서어퍼쳐와, 상기 일차전자의 광량 및 방향을 조절하는 콘덴서렌즈 및 편향 코일과, 소정의 보조틀에 감싸진 복수개의 관통공들을 통해 상기 일차전자의 포커스를 조절하는 가변어퍼쳐를 순차적으로 구비한 주사 전자 현미경에 있어서, 상기 관통공들은 소정의 크기만큼 횡축으로 이동되어 상기 일차전자의 주사방향에서 이격됨을 특징으로 한다.The present invention for achieving the above object is a filament for irradiating predetermined primary electrons, a positive electrode plate and a capacitor aperture to aggregate the primary electrons, a condenser lens and a deflection coil for adjusting the amount and direction of the primary electrons; In the scanning electron microscope sequentially provided with a variable aperture for adjusting the focus of the primary electron through a plurality of through holes wrapped in a predetermined auxiliary frame, the through holes are moved in the horizontal axis by a predetermined size to the primary It is characterized in that spaced apart in the scanning direction of the electron.
이에 따라, 본 발명에서는 주사되는 일차전자의 전류량이 정확히 파악된다.Accordingly, in the present invention, the amount of current of the primary electrons to be scanned is accurately determined.
이하, 첨부된 도면을 참조하여 본 발명에 따른 주사 전자 현미경을 좀더 상세히 설명하면 다음과 같다.Hereinafter, a scanning electron microscope according to the present invention will be described in more detail with reference to the accompanying drawings.
도 2는 본 발명에 따른 주사 전자 현미경의 가변어퍼쳐를 개략적으로 도시한 단면도이다.2 is a cross-sectional view schematically showing a variable aperture of the scanning electron microscope according to the present invention.
도시된 바와 같이, 본 발명에 따른 주사 전자 현미경의 가변어퍼쳐(15)는 소정의 크기만큼 횡축으로 이동되어, 전류계(100)와 접속된다.As shown, the variable aperture 15 of the scanning electron microscope according to the present invention is moved in the horizontal axis by a predetermined size and connected to the ammeter 100.
이러한 본 발명에 따른 가변어퍼쳐(15)의 동작을 좀더 상세히 설명한다.The operation of the variable aperture 15 according to the present invention will be described in more detail.
먼저, 작업자는 상술한 조절스크류(16)를 조작하여 가변어퍼쳐(15)의 위치를 횡방향으로 소정의 크기만큼 이동시킨다.First, the operator operates the above-described adjusting screw 16 to move the position of the variable aperture 15 by a predetermined size in the lateral direction.
이에 따라, 일차전자(2)의 주사 경로상에는 관통공(15a) 대신에 관통공(15a)을 감싸고 있던 보조틀(15b)이 위치한다.Accordingly, the auxiliary frame 15b enclosing the through hole 15a is positioned on the scanning path of the primary electrons 2 instead of the through hole 15a.
한편, 가변어퍼쳐(15)에는 소정의 전류계(100), 예컨대, 피코전류계(Pico ammeter)가 접속된다.On the other hand, a predetermined ammeter 100, for example a pico ammeter, is connected to the variable aperture 15.
이에 따라, 보호틀(15b)에 통전되는 전류는 전류계(100)에 의해 쉽게 감지된다.Accordingly, the current flowing through the protection frame 15b is easily sensed by the ammeter 100.
그 후, 작업자는 가변어퍼쳐(15)를 향하여 상술한 일차전자(2)를 주사한다.Thereafter, the worker scans the primary electrons 2 described above toward the variable aperture 15.
이때, 가변어퍼쳐(15)의 보조틀(15b)은 주사되는 일차전자(2)에 의해 대전되고, 전류계(100)는 일차전자의 전류량을 감지한 후, 그 양을 모니터(5)로 디스플레이한다.At this time, the auxiliary frame 15b of the variable aperture 15 is charged by the primary electrons 2 to be scanned, and the ammeter 100 senses the current amount of the primary electrons and displays the amount with the monitor 5. do.
이에 따라, 작업자는 주사되는 일차전자(2)의 전류량을 정확히 파악한 후, 소정의 사후 작업을 적절히 실시한다.Accordingly, the operator accurately grasps the amount of current of the primary electrons 2 to be scanned, and then appropriately performs a predetermined post-work.
일례로, 상술한 파악결과, 감지된 일차전자(2)의 전류값이 기 조사된 기준 전류값에서 이탈하는 경우, 작업자는 설비를 다운시킨 후, 일차전자(2)의 전류량을 재셋팅시킴으로써, 상술한 시료(17)의 대전현상을 미리 예방한다.For example, as a result of the above-described grasp, when the detected current value of the primary electrons 2 deviates from the previously irradiated reference current value, the operator shuts down the facility and then resets the current amount of the primary electrons 2 by The charging phenomenon of the above-described sample 17 is prevented in advance.
이어서, 본 발명의 가변어퍼쳐(15)를 조절스크류(16)를 통해 이동시켜, 일차전자(2)의 경로상에 관통공(15a)이 위치되도록 재배열한다.Subsequently, the variable aperture 15 of the present invention is moved through the adjusting screw 16 and rearranged so that the through hole 15a is positioned on the path of the primary electron 2.
그 후, 상술한 바와 같이, 일차전자(2)를 주사하여, 시료(17)의 특성을 측정한다.Then, as above-mentioned, the primary electron 2 is scanned and the characteristic of the sample 17 is measured.
이때, 일차전자(2)는 상술한 본 발명의 가변어퍼쳐(15)를 통하여 그 전류값이 미리 조절되어 있음으로써, 시료(17)를 대전시키지 않는다.At this time, the primary electrons 2 do not charge the sample 17 because the current value of the primary electrons 2 is adjusted in advance through the above-described variable aperture 15 of the present invention.
또한, 상술한 본 발명을 통한 일차전자(2)의 전류값 측정은 주사 전자 현미경을 통한 소정의 측정작업 도중에 주기적으로 진행됨으로써, 전체적인 공정 흐름의 안정화를 도모한다.In addition, the current value measurement of the primary electrons 2 according to the present invention described above is periodically performed during the predetermined measurement operation through the scanning electron microscope, thereby stabilizing the overall process flow.
이와 같은, 본 발명은 일차전자(2)의 전류값을 측정할 수 없었던 종래의 주사 전자 현미경의 전 모델에 있어서 두루 유용하다.As described above, the present invention is useful in all models of the conventional scanning electron microscope in which the current value of the primary electrons 2 could not be measured.
그리고, 본 발명의 특정한 실시예가 설명 및 도시되었지만 본 발명이 당업자에 의해 다양하게 변형되어 실시될 가능성이 있는 것은 자명한 일이다.And while certain embodiments of the invention have been described and illustrated, it will be apparent that the invention may be embodied in various modifications by those skilled in the art.
이와 같은 변형된 실시예들은 본 발명의 기술적사상이나 관점으로부터 개별적으로 이해되어져서는 안되며 이와 같은 변형된 실시예들은 본 발명의 첨부된 특허청구의 범위한에 속한다 해야 할 것이다.Such modified embodiments should not be understood individually from the technical spirit or point of view of the present invention and such modified embodiments should fall within the scope of the appended claims of the present invention.
이상에서 상세히 설명한 바와 같이, 본 발명에 따른 주사 전자 현미경의 가변어퍼쳐에서는 상술한 가변어퍼쳐의 위치를 소정의 방향으로 이동시켜, 일차전자와 맞닿도록 하고, 소정의 전류계를 이러한 가변어퍼쳐에 접속시킴으로써, 주사되는 일차전자의 전류량을 정확하게 파악할 수 있다.As described above in detail, in the variable aperture of the scanning electron microscope according to the present invention, the position of the variable aperture described above is moved in a predetermined direction so as to contact the primary electrons, and a predetermined ammeter is applied to the variable aperture. By connecting, it is possible to accurately grasp the amount of current of the primary electrons to be scanned.
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