KR102856470B1 - Display device using light emitting diode - Google Patents

Abstract

A display device including a light emitting diode is provided. The display device includes a substrate including a unit pixel, at least one light emitting diode disposed on the substrate and included in the unit pixel, and a plurality of light-gathering patterns disposed on the substrate and the at least one light emitting diode, wherein the substrate includes a light-emitting region overlapping at least one light emitting diode and a non-light-emitting region distinct from the light-emitting region, and the plurality of light-gathering patterns are disposed in the non-light-gathering region.

Description

Display device using light-emitting diode {DISPLAY DEVICE USING LIGHT EMITTING DIODE}

The present invention relates to a display device, and more particularly, to a display device using a light emitting diode (LED).

As we enter the full-fledged information age, the field of display devices that visually display electrical information signals is rapidly developing, and research is ongoing to develop performances such as thinning, weight reduction, and low power consumption for various display devices.

Among various display devices, light-emitting displays (LEDs) are self-luminous. Unlike liquid crystal displays (LCDs), they do not require a separate light source, allowing for lightweight and thin designs. Furthermore, LEDs offer advantages in power consumption due to their low-voltage operation. Furthermore, they boast superior color reproduction, response speed, viewing angle, and contrast ratio (CR), leading to their potential applications in a wide range of fields.

Light-emitting displays are manufactured by transferring ultra-small light-emitting diodes (LEDs) onto thin-film transistor array substrates or by forming thin-film transistors on wafers grown with LEDs. LEDs are attracting attention as light-emitting devices because they not only light up quickly, but also consume little power, are highly impact-resistant, offer excellent stability, and can display high-brightness images. Recently, demand for ultra-high-resolution displays and ultra-small wearable displays has increased, leading to increasingly stringent requirements for inter-pixel color interference and viewing angles.

Accordingly, the inventors of the present invention invented a display device capable of controlling the viewing angle and minimizing color interference between pixels.

The problem to be solved by the present invention is to provide a display device with improved color quality by minimizing color interference between pixels.

In addition, another problem that the present invention seeks to solve is to provide a display device capable of implementing ultra-high resolution by controlling the viewing angle of a light-emitting element.

In addition, another problem that the present invention seeks to solve is to provide a display device that can easily satisfy various conditions required for each product group.

The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the description below.

In order to solve the above-described problem, a light emitting diode display device according to an embodiment of the present invention includes a substrate including a unit pixel, at least one light emitting diode disposed on the substrate and included in the unit pixel, and a plurality of light-gathering patterns disposed on the substrate and the at least one light emitting diode, wherein the substrate includes a light-emitting region overlapping at least one light emitting diode and a non-light-emitting region distinct from the light-emitting region, and the plurality of light-gathering patterns are characterized in that they are disposed in the non-light-gathering region.

Specific details of other embodiments are included in the detailed description and drawings.

The present invention can control the viewing angle of a light-emitting display device by arranging a light-gathering pattern around a light-emitting diode.

In addition, the present invention can satisfy viewing angle conditions required differently for each product group by arranging a light collection pattern around a pixel.

In addition, the present invention can improve the color quality of a display device by minimizing color interference between pixels by arranging a light-gathering pattern around a light-emitting diode.

The effects according to the present invention are not limited to those exemplified above, and more diverse effects are included in this specification.

Figure 1 is a schematic diagram of a display device according to one embodiment of the present invention.
Figure 2 is a cross-sectional view of a display device according to one embodiment of the present invention.
Figure 3 is a cross-sectional view of a display device according to another embodiment of the present invention.
Figure 4 is a cross-sectional view of a display device according to one embodiment of the present invention.
Figure 5 is a cross-sectional view of a display device according to one embodiment of the present invention.
Figure 6 is a table showing experimental results of various embodiments of the present invention.
Figure 7 is a schematic diagram of a pixel according to another embodiment of the present invention.
Figure 8 is a schematic diagram of a pixel according to another embodiment of the present invention.
Figures 9a and 9b are schematic diagrams of pixels according to another embodiment of the present invention.
Figures 10a and 10b are tables showing experimental results of various embodiments of the present invention.

The advantages and features of the present invention, and the methods for achieving them, will become clearer with reference to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms. These embodiments are provided solely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined solely by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining embodiments of the present invention are exemplary, and therefore the present invention is not limited to the matters illustrated. In addition, in describing the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted. When the terms “includes,” “has,” and “consists of” are used in this specification, other parts may be added unless “only” is used. When a component is expressed in the singular, it includes a case where the plural is included unless there is a specifically explicit description.

When interpreting a component, it is interpreted as including the error range even if there is no separate explicit description.

When describing a positional relationship, for example, when the positional relationship between two parts is described as 'on top of', 'upper part of', 'lower part of', 'on the side of', etc., one or more other parts may be located between the two parts, unless 'right away' or 'directly' is used.

When an element or layer is referred to as being on another element or layer, this includes both cases where the other element is directly on top of the other element or layer or where another layer or other element is interposed therebetween.

While terms like "first" and "second" are used to describe various components, these components are not limited by these terms. These terms are merely used to distinguish one component from another. Accordingly, a "first" component referred to below may also be a "second" component within the technical scope of the present invention.

Identical reference numerals throughout the specification refer to identical components.

The size and thickness of each component shown in the drawing are shown for convenience of explanation, and the present invention is not necessarily limited to the size and thickness of the component shown.

The features of each of the various embodiments of the present invention can be partially or wholly combined or combined with each other, and various technical connections and operations are possible, and each embodiment can be implemented independently of each other or implemented together in a related relationship.

Hereinafter, the present invention will be described with reference to the drawings.

Figure 1 is a schematic diagram of a display device according to one embodiment of the present invention. The light emitting diode display device (100) includes a substrate (110), a gate driver (GC), a data driver (DC), and a timing controller (TC).

The display device (100) may include various circuits, wiring, and light-emitting elements arranged on a substrate (110). The substrate (110) includes a plurality of pixels (PX), and the pixels (PX) may be distinguished by a plurality of data lines (DL) and a plurality of gate lines (GL) that intersect each other. The substrate (110) may be divided into a display area including a plurality of pixels (PX) and a non-display area in which various signal lines or pads are formed. Each pixel (PX) may include a light-emitting diode (140 in FIG. 2) as a light-emitting element, and for example, a micro light-emitting diode (μ-LED) having a size of 100 μm or less may be used. The pixel (PX) illustrated in FIG. 1 may be composed of a plurality of sub-pixels. Each of the plurality of sub-pixels may include a light-emitting diode (140), and the plurality of light-emitting diodes (140) included in one pixel (PX) may emit light in different colors. The smallest unit pixel (PX) that can implement all colors that the display device (100) can display is called a unit pixel, and at this time, the unit pixel can correspond to the pixel (PX) illustrated in FIG. 1.

The timing controller (TC) receives timing signals such as vertical synchronization signals, horizontal synchronization signals, data enable signals, and dot clocks through a receiving circuit such as an LVDS or TMDS interface connected to the host system. The timing controller (TC) generates timing control signals for controlling the data driver (DC) and gate driver (GC) based on the input timing signals.

A data driving unit (DC) is connected to a plurality of data lines (DL) of a display device (100) and supplies a data voltage (Vdata) to a plurality of pixels (PX). The data driving unit (DC) may include a plurality of source drive ICs (Integrated Circuits). The plurality of source drive ICs may receive digital video data (RGB) and a source timing control signal (DDC) from a timing controller (TC). The plurality of source drive ICs may convert the digital video data (RGB) into a gamma voltage in response to the source timing control signal (DDC) to generate a data voltage (Vdata), and supply the data voltage (Vdata) through a plurality of data lines (DL) of the display device (100). The plurality of source drive ICs may be connected to a plurality of data lines (DL) of the display device (100) by a COG (Chip On Glass) process or a TAB (Tape Automated Bonding) process. Additionally, multiple source drive ICs may be formed on the substrate (110) or may be formed on a separate PCB substrate and electrically connected to the substrate (110).

A gate driver (GC) is connected to a plurality of gate lines (GL) on a substrate (110) and supplies gate signals to a plurality of pixels (PX). The gate driver (GC) may include a level shifter and a shift register. The level shifter may shift the level of a clock signal (CLK) input from a timing controller (TC) at a TTL (Transistor-Transistor-Logic) level and supply the shift signal to the shift register. The shift register may be formed in a non-display area of the substrate (110) by the GIP method, but is not limited thereto. The shift register may be configured with a plurality of stages that shift and output gate signals in response to the clock signal (CLK) and the driving signal. The plurality of stages included in the shift register may sequentially output gate signals through a plurality of output terminals.

Meanwhile, the gate driver (GC), data driver (DC), and timing controller (TC) are arranged on the lower side of the substrate (110), and a plurality of wires such as gate wires (GL) and data wires (DL) can be arranged on the side of the substrate (110).

Fig. 2 is a cross-sectional view of a display device according to one embodiment of the present invention, and Fig. 3 is a cross-sectional view of a display device according to another embodiment of the present invention. Specifically, Figs. 2 and 3 are different embodiments of vertical cross-sectional views from II to II' in the display device (100) illustrated in Fig. 1, and may be vertical cross-sectional views corresponding to a sub-pixel area among pixels (PX).

Referring to FIGS. 1 and 2, a display device (100) according to one embodiment of the present invention has a light emitting diode (140) arranged in each of a plurality of pixels (PX). A pixel (PX) is an individual unit that emits light and may include a plurality of light emitting elements and a plurality of pixel circuits for individually driving the plurality of light emitting elements.

A display device (100) according to one embodiment of the present invention may include a substrate (110), a semiconductor element (120), a gate insulating layer (131), a protective layer (132), a reflective layer (RF), an adhesive layer (133), a light-emitting diode (140), an insulating layer (150), and a connecting electrode (161, 162).

The substrate (110) supports various functional elements and may be an insulating material. For example, the substrate (110) may include glass or polyimide. If the substrate (110) is flexible, the substrate (110) may further include a back plate bonded to the back surface of the substrate (110) to reinforce the substrate (110). The back plate may include a plastic material, for example, polyethylene terephthalate.

A semiconductor element (120) is arranged on a substrate (110). The semiconductor element (120) can be used as a driving element of a display device (100). The semiconductor element (120) may be, for example, a thin film transistor (TFT), an N-channel metal oxide semiconductor (NMOS), a P-channel metal oxide semiconductor (PMOS), a complementary metal oxide semiconductor (CMOS), a field effect transistor (FET), etc., but is not limited thereto. Hereinafter, it is assumed that the plurality of semiconductor elements (120) are thin film transistors, but is not limited thereto.

The semiconductor device (120) includes a gate electrode (121), an active layer (122), a source electrode (123), and a drain electrode (124).

A gate electrode (121) is disposed on a substrate (110). The gate electrode (121) may be composed of a conductive material, for example, copper (Cu), aluminum (Al), molybdenum (Mo), titanium (Ti), or an alloy thereof, but is not limited thereto.

A gate insulating layer (131) is disposed on the gate electrode (121). The gate insulating layer (131) is a layer for insulating the gate electrode (121) and the active layer (122) and may be formed of an insulating material. For example, the gate insulating layer (131) may be formed of a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

An active layer (122) is disposed on the gate insulating layer (131). For example, the active layer (122) may be made of, but is not limited to, an oxide semiconductor, amorphous silicon, or polysilicon.

A source electrode (123) and a drain electrode (124) are arranged spaced apart from each other on the active layer (122). The source electrode (123) and the drain electrode (124) can be electrically connected to the active layer (122). The source electrode (123) and the drain electrode (124) can be made of a conductive material, for example, copper (Cu), aluminum (Al), molybdenum (Mo), titanium (Ti), or an alloy thereof, but are not limited thereto.

A protective layer (132) is disposed on a semiconductor element (120). By providing the protective layer (132), an element disposed under the protective layer (132), for example, the semiconductor element (120), can be protected. The protective layer (132) may be composed of a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto. The protective layer (132) may include a first hole (H1) for electrically connecting the semiconductor element (120) and the first connection electrode (161), and a second hole (H2) for electrically connecting the common wiring (CL) and the second connection electrode (162).

A buffer layer may be further disposed between the substrate (110) and the semiconductor element (120). The buffer layer may minimize the diffusion of moisture or impurities from the substrate (110) to the upper portion of the substrate (110). The buffer layer may be composed of a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

A gate wiring (GL) and a data wiring (DL) are arranged on a substrate (110). The gate wiring (GL) may be arranged on a gate insulating layer (131) or on the same layer as the gate electrode (121). The gate wiring (GL) may be made of the same material as the gate electrode (121). The data wiring (DL) may also be formed in the same manner as the gate wiring (GL), and the data wiring (DL) may extend in a different direction from the gate wiring (GL).

A common wiring (CL) may be arranged on the gate insulating layer (131). The common wiring (CL) is a wiring for applying a common voltage to the light emitting diode (140) and may be arranged to be spaced apart from the gate wiring (GL) or the data wiring (DL). The common wiring (CL) may extend in the same direction as the gate wiring (GL) or the data wiring (DL). The common wiring (CL) may be made of the same material as the source electrode (123) and the drain electrode (124), or may be made of the same material as the gate electrode (121).

A reflective layer (RF) is disposed on the protective layer (132). The reflective layer (RF) is a layer for improving the light emission efficiency of the light emitting diode (140). The reflective layer (RF) reflects light emitted from the light emitting diode (140) toward the substrate (110) toward the upper portion of the display device (100) and emits the light to the outside of the display device (100). The reflective layer (RF) may be made of a metal material having a high reflectivity and may include, for example, silver (Ag), aluminum (Al), etc. Meanwhile, pure silver (Ag) may react with oxygen or nitrogen, which may lower the reflectivity, and therefore, the reflective layer (RF) may be formed as a multilayer of ITO/Ag/ITO, or may be formed by adding impurities such as palladium (Pd) or copper (Cu).

An adhesive layer (133) is disposed on the reflective layer (RF). The adhesive layer (133) is a layer for fixing the light-emitting diode (140) on the substrate (110), and can electrically insulate the reflective layer (RF) containing a metal material from the light-emitting diode (140). However, it is not necessarily limited thereto, and when the light-emitting diode is of a vertical type in which one electrode of the lower portion is exposed, the adhesive layer (133) may include a conductive material so that one electrode of the light-emitting diode and the reflective layer (RF) can be electrically connected. The adhesive layer (133) may be made of a heat-curing material or a photo-curing material, and the adhesive layer (133) may be selected from any one of adhesive polymer, epoxy resist, UV resin, polyimide series, acrylate series, urethane series, and polydimethylsiloxane (PDMS), but is not limited thereto. Meanwhile, the adhesive layer (133) can cover the entire surface of the substrate (110), and the adhesive layer (133) can have a plurality of island shapes to overlap with the reflective layer (RF) and the light-emitting diode (140) as shown in FIG. 3.

A plurality of light emitting diodes (140) may be formed on a separate growth substrate and then transferred onto a substrate (110) through a separation process from the growth substrate. A laser lift off (LLO) process or a chemical lift off (CLO) process may be applied to the substrate separation process for separating the plurality of light emitting diodes (140) from the growth substrate.

A light emitting diode (140) is arranged on the adhesive layer (133) to overlap with a reflective layer (RF). The light emitting diode (140) may include an n-type layer (141), an active layer (142), a p-type layer (143), an n-electrode (145), and a p-electrode (144). In this specification, the light emitting diode (140) is described as having a lateral structure in which the n-electrode (145) and the p-electrode (144) are arranged side by side on the upper surface of the light emitting diode (140), but is not necessarily limited thereto. For example, the light emitting diode (140) may have a vertical structure in which the n-electrode (145) and the p-electrode (144) are arranged on different surfaces, or a flip structure in which the n-electrode (145) and the p-electrode (144) are arranged on the same surface.

The n-type layer (141) is a semiconductor layer in which free electrons with negative charges move as carriers to generate current, and may be formed of an n-GaN-based material. The n-GaN-based material may be GaN, AlGaN, InGaN, AlInGaN, etc., and Si, Ge, Se, Te, C, etc. may be used as impurities used for doping the n-type layer (141). In addition, in some cases, a buffer layer such as an undoped GaN-based semiconductor layer may be additionally formed between the growth substrate and the n-type layer (141).

The active layer (142) is disposed on the n-type layer (141) and may have a multi-quantum well (MQW) structure having a well layer and a barrier layer having a higher band gap than the well layer. For example, the active layer (142) may have a multi-quantum well structure such as InGaN/GaN.

The p-type layer (143) is a semiconductor layer in which holes with positive charges move as carriers to generate current, and may be formed of a p-GaN-based material. The p-GaN-based material may be GaN, AlGaN, InGaN, AlInGaN, etc., and impurities such as Mg, Zn, Be, etc. may be used for doping the p-type layer (143).

A p electrode (144) is arranged on the p-type layer (143) to form an ohmic contact. The p electrode (144) may be a transparent conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), but is not limited thereto. In addition, an n electrode (145) for an ohmic contact is arranged on the n-type layer (141). The n electrode (145) may be made of the same material as the p electrode (144).

A sealing film (146) is disposed on the n-type layer (141) and the p-type layer (143) to protect the n-type layer (141) and the p-type layer (143). The sealing film (146) may be made of SiO2, Si3N4, or resin. The sealing film (146) may be disposed on the entire surface of the light-emitting diode (140) except for the lower portion of the light-emitting diode (140). However, a portion of the p-electrode (144) and the n-electrode (145) may be exposed by the sealing film (146), and the p-electrode (144) and the n-electrode (145) are in ohmic contact with the first connection electrode (161) and the second connection electrode (162), respectively, through the exposed area.

An insulating layer (150) is disposed on a substrate (110) and a semiconductor element (120). The insulating layer (150) may include a first insulating layer (151) and a second insulating layer (152) on the first insulating layer (151). The first insulating layer (151) and the second insulating layer (152) may be made of an organic material such as photo acryl, polyimide, benzocyclobutene resin, or acrylate, but are not limited thereto. The first insulating layer (151) may be made of the same material as the second insulating layer (152).

The first insulating layer (151) may be arranged to cover the entire surface of the substrate (110). In addition, the first insulating layer (151) may be arranged adjacent to the side surface of the light-emitting diode (140) so as to firmly fix the light-emitting diode (140) on the substrate (110). Meanwhile, the side surface of the light-emitting diode (140) may be arranged on the substrate (110) with a portion of the sealing film (146) damaged, and thus a portion of the n-type layer (141) exposed. The first insulating layer (151) may be arranged in close contact with the side surface of the light-emitting diode (140) so as to electrically insulate the n-type layer (141) and the p-type layer (143) of the light-emitting diode (140).

The first insulating layer (151) may include a first hole (H1) for electrically connecting the semiconductor element (120) and the first connection electrode (161), and a second hole (H2) for electrically connecting the common wiring (CL) and the second connection electrode (162). At this time, the first hole (H1) and the second hole (H2) included in the first insulating layer (151) may have a larger cross-sectional area than the first hole (H1) and the second hole (H2) included in the adhesive layer (133).

The first insulating layer (151) can flatten the area between the plurality of light-emitting diodes (150). The first insulating layer (151) compensates for the step difference on the substrate (110) caused by the semiconductor element (120) and the reflective layer (RF), etc., thereby helping the connecting electrodes (161, 162) to make smooth ohmic contact with the semiconductor element (120) or the common wiring (CL).

The first insulating layer (151) may have a thickness thicker than the light emitting diode (140). That is, the first insulating layer (151) may overlap with the upper portion of the light emitting diode (140). In some embodiments, a second insulating layer (152) may be further disposed on the first insulating layer (151). In this case, the second insulating layer (152) may overlap with the upper portion of the light emitting diode (140). That is, the height of the first insulating layer (151) and the second insulating layer (152) added together may be greater than the height of the light emitting diode (140). The second insulating layer (152) may include a first hole (H1) for electrically connecting the semiconductor element (120) and the first connection electrode (161), and a second hole (H2) for electrically connecting the common wiring (CL) and the second connection electrode (162). At this time, the first hole (H1) and the second hole (H2) included in the second insulating layer (152) may have a larger cross-sectional area than the first hole (H1) and the second hole (H2) included in the first insulating layer (151).

The first insulating layer (151) or the second insulating layer (152) is disposed on the light-emitting diode (140) and is disposed so as to expose at least a portion of the p-electrode (144) and the n-electrode (145). Accordingly, the first connection electrode (161) can be electrically connected to the p-electrode (144), and the second connection electrode (162) can be electrically connected to the n-electrode (145).

Referring to FIG. 2, a first connection electrode (161) is disposed on a first insulating layer (151), a second insulating layer (152), and a light-emitting diode (140). The first connection electrode (161) electrically connects a p-type layer (143) of the light-emitting diode (140) and a semiconductor element (120). The first connection electrode (161) is connected to a source electrode (123) of the semiconductor element (120) through a first hole (H1). The first connection electrode (161) may be made of a transparent conductive material when the display device (100) is a front-emitting type, and may be made of a reflective conductive material when the display device (100) is a back-emitting type. The transparent conductive material may be, but is not necessarily limited to, ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide). The reflective challenge material may be, but is not necessarily limited to, Al, Ag, Au, Pt, or Cu.

A second connection electrode (162) is disposed on the first insulating layer (151), the second insulating layer (152), and the light-emitting diode (140). The second connection electrode (162) electrically connects the n-type layer (141) of the light-emitting diode (140) and the common wiring (CL). The second connection electrode (162) is connected to the common wiring (CL) through the second hole (H2). The second connection electrode (162) may be made of the same material as the first connection electrode (161).

Referring to FIG. 2, a third insulating layer (153) may be further disposed on the substrate (110). The third insulating layer (153) is disposed on the second insulating layer (152) and may be formed of an organic material or the same material as the insulating layer (150). The third insulating layer (153) may be configured to absorb light by including a black material in order to prevent light emitted from the light emitting diode (140) from moving to an adjacent pixel (PX) and causing a color mixing phenomenon between pixels (PX).

Referring to FIG. 2, the substrate (110) can be divided into an emission area (EA) and a non-emission area (NEA). The emission area (EA) is an area where the light emitting diode (140) is arranged, that is, the emission area (EA) is an area overlapping the light emitting diode (140). And, the non-emission area (NEA) is an area other than the emission area (EA). The area where color is actually implemented among the pixel (PX) areas can be defined by the third insulating layer, but in this specification, the emission area (EA) is described as an area overlapping the light emitting diode (140) for convenience of explanation. That is, the area where light is actually emitted from the pixel (PX) can be at least a portion of the non-emission area (NEA) in addition to the emission area (EA).

According to one embodiment of the present invention, a display device (100) may have a protective substrate (210) disposed on a substrate (110). The protective substrate (210) may be a transparent material, for example, glass. The protective substrate (210) protects the display device (100) from external impact and prevents dust, moisture, etc. from entering the interior of the display device (100). A fourth insulating layer (154) may be disposed between the protective substrate (210) and the substrate (110). The fourth insulating layer (154) may include a material having adhesive properties, and thus, the protective substrate (210) may be fixed to the substrate (110).

The protective substrate (210) may include a light-gathering pattern (180). The light-gathering pattern (180) is disposed inside the protective substrate (210) and may be disposed in a non-light-emitting area (NEA). That is, the light-gathering pattern (180) may be disposed between a plurality of light-emitting diodes (140) so as not to overlap with the light-emitting diodes (140). The light-gathering pattern (180) reflects light emitted from the light-emitting diodes (140) toward the upper portion of the light-emitting area (EA), thereby improving the light efficiency of the display device (100) and controlling the viewing angle.

The focusing pattern (180) can be formed by changing the density inside the protective substrate (210) by the energy of a high-density focused laser beam. That is, the focusing pattern (180) can change the characteristics of a specific region inside the protective substrate (210) by concentrating the laser beam inside the protective substrate (210). At this time, an ultrashort pulse laser can be used as the laser used, and the focusing pattern (180) can be formed by changing the density inside the protective substrate (210) to induce a cavitation phenomenon inside the protective substrate (210). Inhomogeneity occurs between the refractive index of the focusing pattern (180) and the refractive index of the protective substrate (210), and this optical inhomogeneity can be recognized as the focusing pattern (180) by visual confirmation or photoelectric detection. The density of the light-gathering pattern (180) may be lower than the density of the protective substrate (210). For example, when the material of the protective substrate (210) is glass, the refractive index of the light-gathering pattern (180) may be 1.0.

The light collecting pattern (180) may have a three-dimensional shape, and the side surface of the light collecting pattern (180) may have an inclined slope so that the upper cross-sectional area is larger than the lower cross-sectional area. In addition, the angle formed by the lower surface and the side surface of the light collecting pattern (180) may be formed to be an acute angle.

The display device (100) according to one embodiment of the present invention illustrated in FIG. 2 can easily control the viewing angle of the display device (100) by simply placing a protective substrate (210) on which a light-collecting pattern (180) is arranged on the substrate (110). Various viewing angle conditions may be required depending on the product group, and the present invention can provide a display device (100) that can satisfy the requirements of each product group at a low process cost.

The display device (300) illustrated in FIG. 3 is substantially the same as the display device (100) illustrated in FIG. 2 except that the fifth insulating layer (355) and the light collection pattern (380) included in the fifth insulating layer (355) are different from the display device (100) illustrated in FIG. 2, so a duplicate description is omitted.

Referring to FIGS. 1 and 3, a fifth insulating layer (355) may be disposed on the substrate (110). The fifth insulating layer (355) may be the same material as the first insulating layer (151), and may be made of an organic material such as photo acryl, polyimide, benzocyclobutene resin, or acrylate resin, but is not limited thereto. The fifth insulating layer (355) may compensate for a step difference on the substrate (110). That is, the first hole (H1) and the second hole (H2) on the substrate (110) are filled with the fifth insulating layer (355), and thus, the substrate (110) may have a flat upper surface.

The light-gathering pattern (380) may be arranged inside the fifth insulating layer (355). The light-gathering pattern (380) illustrated in FIG. 3 is arranged closer to the substrate (110) and the light-emitting diode (140) compared to the light-gathering pattern (180) illustrated in FIG. 2, and accordingly, the light efficiency of the display device (300) may be further improved. The display device (300) illustrated in FIG. 3 may omit the third insulating layer (153) compared to the display device (100) illustrated in FIG. 2. Since the light-gathering pattern (380) is arranged closer to the light-emitting diode (140), light emitted from the light-emitting diode (140) may be guided to the upper portion of the light-emitting area (EA) by the light-gathering pattern (380). In addition, the light collection pattern (380) minimizes color mixing between adjacent light-emitting diodes (140), thereby enabling a distinct black to be implemented, thereby improving the image quality of the display device (300).

The light-gathering pattern (380) is arranged in the non-light-emitting area (NEA) and may overlap with the first hole (H1) or the second hole (H3). However, it is not necessarily limited thereto, and the light-gathering pattern (380) may overlap with the semiconductor element (120) of the non-light-emitting area (NEA) or may overlap with a portion of the reflective layer (RF). However, the light-gathering pattern (380) must be arranged at a point where it meets the light emitted from the light-emitting diode (140). The light-gathering pattern (380) illustrated in FIG. 3 may be formed by the same process as the light-gathering pattern (180) illustrated in FIG. 2 and may have the same shape. That is, the light-gathering pattern (380) may be formed such that the angle between the lower surface and the side surface is acute based on the vertical cross-section of the light-gathering pattern (380).

FIGS. 4 and 5 are cross-sectional views of display devices according to one embodiment of the present invention, and FIG. 6 is a table showing experimental results of various embodiments of the present invention. Specifically, FIG. 4 is a schematic vertical cross-sectional view of a display device (400) according to various embodiments of the present invention, and FIG. 5 is a schematic vertical cross-sectional view for explaining the characteristics of a light collection pattern (480). Although the display device (400) of FIGS. 4 and 5 is illustrated as including only a substrate (110) and an upper substrate (410) in order to easily explain the characteristics of the light collection pattern (480), the structure of the display device (100, 300) illustrated in FIGS. 2 and 3 can be equally applied to the display device (400) illustrated in FIGS. 4 and 5.

A plurality of light emitting diodes (140A, 140B, 140C) are arranged on a substrate (110). The plurality of light emitting diodes (140A, 140B, 140C) illustrated in FIG. 4 may be included in one unit pixel (PX), but are not necessarily limited thereto. For example, in order to explain the relationship between the light emitting diode (140) and the light collection pattern (480), the plurality of light emitting diodes (140A, 140B, 140C) may correspond to light emitting elements, or in order to explain the relationship between the pixel (PX) and the light collection pattern (480), the plurality of light emitting diodes (140A, 140B, 140C) may correspond to the unit pixel (PX). That is, each of the plurality of light emitting diodes (140A, 140B, 140C) may be understood to represent a light emitting element or a unit pixel (PX).

The light-gathering pattern (480) is positioned in the non-emitting area (NEA) and is positioned inside the upper substrate (410). The upper substrate (410) may correspond to the protective substrate (210) of FIG. 2 or the fifth insulating layer (355) of FIG. 3. The light-gathering pattern (480) may be positioned on top of the light-emitting diode (140). Specifically, the light-gathering pattern (480) may be positioned higher than the active layer (142) of the light-emitting diode (140).

In Fig. 5, the path and viewing angle of light emitted from the light emitting diode (140) are schematically shown. The light from the light emitting diode (140) can be emitted from the light emitting diode (140) and spread out within a range from the first path (LT1) to the fourth path (LT4). In addition, the light can be recognized with the highest brightness in the second path (LT2) or the third path (LT3), and the first angle (θ1) formed by the second path (LT2) with the normal line of the substrate (110) is defined as the peak angle of the light emitting diode (140). It is preferable that the light collection pattern (480) be arranged to overlap with the second path (LT2) in which the light from the light emitting diode (140) is recognized with the highest brightness. That is, it is preferable that the light collection pattern (480) be arranged in the non-light emitting area (NEA) within the range of the first angle (θ1). Accordingly, the viewing angle of light emitted from the light emitting diode (140) can be efficiently controlled. The inventors of the present invention recognized that viewing angle conditions required for various applications vary, and developed a display device (400) that can meet the requirements of various applications without changing the basic design of the light emitting element.

The light collecting pattern (480) has a slanted side, and the horizontal cross-sectional shapes of the upper and lower portions of the light collecting pattern (480) may be circular or polygonal. Referring to FIG. 5, the side surface of the light collecting pattern (480) may form a second angle (θ2) with the normal line of the lower surface. In addition, the light collecting pattern (480) may be arranged at the exact center between adjacent light emitting diodes (140A, 140B), and the maximum width of the light collecting pattern (480) may be smaller than the spacing (W) between the adjacent light emitting diodes (140A, 140B). That is, the width of the lower surface of the light collecting pattern (480) may be smaller than the spacing (W) between the light emitting diodes (140A, 140B). In addition, the light collection pattern (480) may be arranged at the exact center of the thickness of the upper substrate (410), but is not limited thereto, and may be arranged to overlap with the second path (LT2) corresponding to the first angle (θ1), which is the peak angle of the light emitting diode (140). However, it is preferable that the light collection pattern (480) be arranged inside the upper substrate (410) so as not to protrude outside the upper and lower surfaces of the upper substrate (410). If the upper substrate (410) corresponds to the protective substrate (210) illustrated in FIG. 2 and the light collection pattern (480) is excessively large, the hardness of the upper substrate (410) may be weakened. Therefore, it is preferable that the size of the light collection pattern (480) be determined in consideration of the hardness of the upper substrate (410).

Fig. 6 shows the results of measuring the luminance for display devices (100, 300, 400) in which the second angle (θ2) is set differently. Specifically, in the table of Fig. 6, the horizontal division represents a comparative example (A) without a light-gathering pattern (480) and the first to fifth experimental examples (B1 to B5) in which the second angle (θ2) of the light-gathering pattern (480) is set in various ways. In addition, the vertical division represents a first measurement value (T1) measuring the average luminance in front of the light-emitting diode (140), a second measurement value (T2) measuring the upper and lower peak angles, and a third measurement value (T3) measuring the left and right peak angles.

Referring to FIG. 6, it is possible to determine how the first to third measurement values (T1, T2, T3) of the first to fifth experimental examples (B1 to B5) change according to the second angle (θ2). The first experimental example (B1) includes a focusing pattern (480) having a second angle (θ2) of 60 degrees, the second experimental example (B2) includes a focusing pattern (480) having a second angle (θ2) of 65 degrees, the third experimental example (B3) includes a focusing pattern (480) having a second angle (θ2) of 70 degrees, the fourth experimental example (B4) includes a focusing pattern (480) having a second angle (θ2) of 75 degrees, and the fifth experimental example (B5) includes a focusing pattern (480) having a second angle (θ2) of 80 degrees. And, the table shown in Fig. 6 is an experimental result for a case where a light-collecting pattern (480) having a minimum width of 40 μm is placed at the exact center of the gap (W) between light-emitting diodes (140A, 140B) and at the exact center of the upper substrate (410) having a thickness of 0.5 mm.

Referring to FIG. 6, as the second angle (θ2) of the light-gathering pattern (480) increases, the average luminance in front of the light-emitting diode (140) also increases compared to the comparative example (A), but in the fifth experimental example (B5) where the second angle (θ2) is 80 degrees, it can be seen that the average luminance value decreases again compared to the fourth experimental example (B4) where the second angle (θ2) is 75 degrees. In addition, the upper and lower peak angles and the left and right peak angles decrease rapidly in the third experimental example (B3) where the second angle (θ2) of the light-gathering pattern (480) is 70 degrees, but increase again in the fifth experimental example (B5) where the second angle (θ2) of the light-gathering pattern (480) is 80 degrees. In conclusion, it is desirable that the second angle (θ2) of the light collection pattern (480) be formed to be greater than 65 degrees and less than 80 degrees.

FIGS. 7, 8, 9a, and 9b are schematic diagrams of pixels according to further embodiments of the present invention, respectively. FIGS. 10a and 10b are tables showing experimental results of various embodiments of the present invention.

Referring to FIGS. 7 to 9B, a pixel (PX) includes a plurality of light-emitting diodes (140A, 140B, 140C), and light-gathering patterns (780, 880, 980) are arranged around the plurality of light-emitting diodes (140A, 140B, 140C). The pixel (PX) illustrated in FIGS. 7 to 8B may be a unit pixel (PX), which is the smallest unit that can implement all colors that the display device (100, 300, 400) can implement. For example, the first light-emitting diode (140A) may be a light-emitting element that emits red light, the second light-emitting diode (140B) may be a light-emitting element that emits green light, and the third light-emitting diode (140C) may be a light-emitting element that emits blue light. The light collection patterns (780, 880, 980) illustrated in FIGS. 7 to 9b are substantially the same as the light collection patterns (180, 380, 480) illustrated in FIGS. 2 to 5 except for their size and position, so a duplicate description is omitted.

Referring to FIG. 7, a light collection pattern (780) may be arranged between the periphery of a pixel (PX) and a plurality of light-emitting diodes (140). At this time, the maximum width of the horizontal cross-section of the light collection pattern (780) may be the same as the width of the horizontal cross-section of the light-emitting diode (140), but is not necessarily limited thereto. The width of the light collection pattern (780) may vary depending on the second angle (θ2) described in FIGS. 5 and 6 and the width of the light-emitting diode (140).

Since the pixels (PX) illustrated in FIG. 7 have light-gathering patterns (780) arranged above and below the light-emitting diode (140), the display devices (100, 300, 400) including the pixels (PX) illustrated in FIG. 7 may be suitable for vehicle displays such as navigation systems. Since the display may obstruct the driver's view if it is reflected or reflected on the windshield of the vehicle, the upper and lower viewing angles of the vehicle display should be controlled narrowly. Therefore, it is preferable that the pixels (PX) or light-gathering patterns (780) illustrated in FIG. 7 be applied to the vehicle display.

The light collection pattern (880) illustrated in FIG. 8 may be arranged on the periphery of the pixel (PX). Specifically, a plurality of light collection patterns (880) may be arranged on the periphery of the pixel (PX), and may be arranged at each corner of a plurality of light-emitting diodes (140A, 140B, 140C). Accordingly, the light-emitting diode (140) may have its upper, lower, left, and right viewing angles controlled to improve straightness. The display device (100, 300, 400) including the pixel (PX) illustrated in FIG. 8 may be suitable for a personal display such as a laptop or tablet. Since a personal display may be sensitive to privacy protection, a wide viewing angle is not required. Therefore, it is preferable that the pixel (PX) or the light collection pattern (880) illustrated in FIG. 8 be applied to the personal display.

The light-gathering pattern (980) illustrated in FIG. 9A may be arranged at the periphery of the pixel (PX). Specifically, the light-gathering pattern (980) may be arranged to have a symmetrical shape on the upper and lower sides, and the left and right sides of the pixel (PX), respectively. That is, the non-emission areas (NEAs) on the upper and lower sides of the pixel (PX) may be defined as the first area (AR1) and the second area (AR2), respectively, and the non-emission areas (NEAs) on the left and right sides of the pixel (PX) may be defined as the third area (AR3) and the fourth area (AR4), respectively. The light-gathering pattern (980) may be arranged in each of the first to fourth areas (AR1, AR2, AR3, and AR4). The light-gathering pattern (980) arranged in the third area (AR3) and the fourth area (AR4) may have a larger horizontal cross-sectional area compared to the light-gathering pattern (880) illustrated in FIG. 8. That is, the light collection pattern (980) can change the path of most of the light emitted from the plurality of light emitting diodes (140A, 140B, 140C), and thus, the front brightness can be improved. Therefore, the display device (100, 300, 400) including the pixel (PX) illustrated in FIG. 9A can be suitable for a wearable display that is frequently used outdoors or a display for virtual reality (VR) that does not require a wide viewing angle. That is, it is preferable to apply the pixel (PX) or the light collection pattern (980) illustrated in FIG. 9A to a display in which the user's position is limited to the front of the display and the brightness requirement level is high.

The pixel (PX) illustrated in FIG. 9b is substantially the same in configuration as the pixel (PX) illustrated in FIG. 9a except that the shapes of the light-gathering patterns (980) arranged in the third region (AR3) and the fourth region (AR4) are different. Referring to FIG. 9b, the areas corresponding to the third region (AR3) and the fourth region (AR4) are larger than the areas corresponding to the first region (AR1) and the second region (AR2). The light-gathering pattern (980) arranged in the third region (AR3) of FIG. 9a may include one light-gathering pattern (980) having a size corresponding to the third region (AR3), and the light-gathering pattern (980) arranged in the third region (AR3) of FIG. 9b may include at least two light-gathering patterns (980).

Fig. 10a shows the results of measuring luminance according to the size and number of light-gathering patterns (980) arranged in the first region (AR1) and the second region (AR2). Specifically, the horizontal division in the table of Fig. 10a represents a comparative example (A), which is a display device without a light-gathering pattern (980), and first to fifth experimental examples (C1 to C5) in which the sizes and numbers of light-gathering patterns (980) arranged in the first region (AR1) and the second region (AR2) are variously set. In addition, the vertical division in the table of Fig. 10a represents a first measurement value (T1) measuring the average luminance at the front of the light-emitting diode (140) and a second measurement value (T2) measuring the upper and lower peak angles.

Referring to FIG. 10a, it is possible to determine how the first and second measurement values (T1, T2) of the first to fifth experimental examples (C1 to C5) change depending on the shape of the light collection pattern (980) arranged in the first region (AR1) and the second region (AR2). The first experimental example (C1) is a case where the number of light collection patterns (980) arranged in the first and second regions (AR1, AR2) is one and the minimum width is 10 μm. In addition, the second experimental example (C2) is a case where the number of light collection patterns (980) arranged in the first and second regions (AR1, AR2) is one and the minimum width is 20 μm. And, the third experimental example (C3) is a case where the number of light collecting patterns (980) arranged in the first and second regions (AR1, AR2) is one and the minimum width is 30㎛. And, the fourth experimental example (C4) is a case where the number of light collecting patterns (980) arranged in the first and second regions (AR1, AR2) is one and the minimum width is 40㎛. And, the fifth experimental example (C5) is a case where the number of light collecting patterns (980) arranged in the first and second regions (AR1, AR2) is two and the minimum width is 20㎛. That is, the fifth experimental example (C5) is a case where two light collecting patterns (980) having a maximum width of 20㎛ are arranged in each of the first and second regions (AR1, AR2). And, the tables illustrated in FIGS. 10A and 10B are experimental results for the case where the horizontal length of the plurality of light-emitting diodes (140A, 140B, 140C) illustrated in FIGS. 9A and 9B is 40 μm, and the vertical length from the upper surface of the light-emitting diode (140A) to the lower surface of the light-emitting diode (140C) is 80 μm. And, the table illustrated in FIG. 10A is an experimental result for the case where the light-collecting pattern (980) arranged in the third and fourth regions (AR3, AR4) is arranged at the exact center of the upper substrate (410) having a minimum width of 30 μm, a second angle (θ2) of 75 degrees, and a thickness of 0.5 mm.

Referring to the experimental results of Fig. 10a, in the fourth experimental example (C4) and the fifth experimental example (C5), the front average luminance is 110% or more compared to the comparative example (A), and the upper and lower peak angles are less than 40 degrees. In conclusion, it is preferable that the light collection pattern (980) be arranged in the first and second areas (AR1, AR2) in a size corresponding to the light emitting diode (140). That is, it is preferable that the light collection pattern (980) have a size that overlaps the width of the light emitting diode (140) included in the unit pixel (PX).

Fig. 10b shows the results of luminance measurement according to the size and number of light-gathering patterns (980) arranged in the third area (AR3) and the fourth area (AR4). Specifically, the horizontal division in the table of Fig. 10b represents a comparative example (A), which is a display device without a light-gathering pattern (980), and the first to fifth experimental examples (D1 to D5) in which the sizes and numbers of light-gathering patterns (980) arranged in the third and fourth areas (AR3, AR4) are variously set. In addition, the vertical division in the table of Fig. 10b represents a first measurement value (T1) measuring the average luminance at the front of the light-emitting diode (140) and a third measurement value (T3) measuring the left and right peak angles.

Referring to FIG. 10b, it is possible to determine how the first and third measurement values (T1, T3) of the first to fifth experimental examples (D1 to D5) change depending on the shape of the light collection pattern (980) arranged in the third area (AR3) and the fourth area (AR4). The first experimental example (D1) is a case where the number of light collection patterns (980) arranged in the third and fourth areas (AR3, AR4) is one and the minimum width is 40 μm. In addition, the second experimental example (D2) is a case where the number of light collection patterns (980) arranged in the third and fourth areas (AR3, AR4) is one and the minimum width is 60 μm. And, the third experimental example (D3) is a case where the number of light collecting patterns (980) arranged in the third and fourth regions (AR3, AR4) is two and the minimum width of each is 40㎛. And, the fourth experimental example (D4) is a case where the number of light collecting patterns (980) arranged in the third and fourth regions (AR3, AR4) is three and the minimum width of each is 40㎛. And, the fifth experimental example (D5) is a case where the number of light collecting patterns (980) arranged in the third and fourth regions (AR3, AR4) is two and the minimum width of each is 20㎛. Meanwhile, the table shown in FIG. 10b is an experimental result for a case where the maximum width of the light collection pattern (980) arranged in the third and fourth areas (AR3, AR4) is 30 μm and the second angle (θ2) of the light collection pattern (980) is 75 degrees.

Referring to the experimental results of Fig. 10b, in the fourth experimental example (D4) and the fifth experimental example (D5), the front average luminance is 120% or more compared to the comparative example (A), and the left and right peak angles are less than 5 degrees. In conclusion, it is preferable that the light collection pattern (980) be arranged in the third and fourth areas (AR3, AR4) in a size corresponding to the plurality of light-emitting diodes (140A, 140B, 140C). That is, it is preferable that the light collection pattern (980) has a size that overlaps all of the plurality of light-emitting diodes (140A, 140B, 140C) included in the unit pixel (PX).

An exemplary embodiment of the present invention can be described as follows.

A light emitting diode display device according to one embodiment of the present invention includes a substrate including a unit pixel, at least one light emitting diode disposed on the substrate and included in the unit pixel, and a plurality of light-gathering patterns disposed on the substrate and the at least one light emitting diode, wherein the substrate includes a light-emitting region overlapping at least one light emitting diode and a non-light-emitting region distinct from the light-emitting region, and the plurality of light-gathering patterns are disposed in the non-light-gathering region.

According to another feature of the present invention, the plurality of light-gathering patterns may include a first light-gathering pattern arranged at the periphery of a unit pixel.

According to another feature of the present invention, the first light-gathering pattern may be a three-dimensional shape with inclined sides.

According to another feature of the present invention, the lower cross-sectional area of the first light-gathering pattern may be larger than the upper cross-sectional area.

According to another feature of the present invention, the angle formed by the vertical normal of the substrate and the side surface of the first light collecting pattern may be between 65 degrees and 80 degrees.

According to another feature of the present invention, at least one light emitting diode may include a first light emitting diode and a second light emitting diode, and the plurality of light collecting patterns may further include a second light collecting pattern disposed between the first light emitting diode and the second light emitting diode.

According to another feature of the present invention, the distance between the second light-gathering pattern and the first light-emitting diode may be the same as the distance between the second light-gathering pattern and the second light-emitting diode.

According to another feature of the present invention, the non-light-emitting region includes a first region, a second region, a third region, and a fourth region, which are peripheral regions of a unit pixel, and the first region faces the second region, the third region faces the fourth region, and the plurality of light-gathering patterns may include at least one first light-gathering pattern, at least one second light-gathering pattern, at least one third light-gathering pattern, and at least one fourth light-gathering pattern, which are respectively arranged in the first region, the second region, the third region, and the fourth region.

According to another feature of the present invention, at least one first focusing pattern and at least one second focusing pattern may have the same size.

According to another feature of the present invention, at least one third focusing pattern and at least one fourth focusing pattern may have the same size.

According to another feature of the present invention, there may be two or more third focusing patterns.

According to another feature of the present invention, the plurality of light-gathering patterns can be positioned within the maximum brightness angle of at least one light-emitting diode.

According to another feature of the present invention, the light emitting diode display device further includes a protective substrate disposed on the substrate, and a plurality of light collection patterns can be disposed inside the protective substrate.

According to another feature of the present invention, the density of the plurality of light-collecting patterns may be less than the density of the protective substrate.

According to another feature of the present invention, the light emitting diode display device further includes an insulating layer that completely covers the substrate and at least one light emitting diode, and a plurality of light collection patterns can be included within the insulating layer.

According to another feature of the present invention, at least one light-emitting diode includes an n-type layer, an active layer, a p-type layer, a first electrode electrically connected to the n-type layer, and a second electrode electrically connected to the p-type layer, which are sequentially stacked, and the first electrode and the second electrode can be arranged on the same surface.

Although the embodiments of the present invention have been described in more detail with reference to the attached drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be implemented without departing from the technical spirit of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain it, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all aspects and not restrictive. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within a scope equivalent thereto should be interpreted as being included in the scope of the rights of the present invention.

100, 300, 400: Display device 110: Board
120: Thin film transistor 121: Gate electrode
122: Active layer 123: Source electrode
124: Drain electrode 131: Gate insulating layer
132: Passivation layer 133: Adhesive layer
140: Light-emitting diode 141: N-type layer
142: Active layer 143: P-type layer
144: p electrode 145: n electrode
150: Insulating layer 151: First insulating layer
152: Second insulation layer 153: Third insulation layer
154: 4th insulation layer 355: 5th insulation layer
161: First connecting electrode 162: Second connecting electrode
210: Protective substrate 410: Upper substrate
PX: Pixel RF: Reflective layer
EA: Emissive area NEA: Non-emissive area
180, 380, 480, 780, 880, 980: Light collection pattern

Claims (19)

A substrate comprising a unit pixel;
At least one light emitting diode and thin film transistor disposed on the substrate and included in the unit pixel;
An insulating layer surrounding the light emitting diode;
A reflective layer disposed below the light-emitting diode;
An adhesive layer disposed between the light-emitting diode and the reflective layer to fix the light-emitting diode to the reflective layer and electrically insulate the light-emitting diode and the reflective layer; and
comprising a plurality of light-collecting patterns arranged on the substrate and the at least one light-emitting diode;
The substrate includes a light-emitting region overlapping with the at least one light-emitting diode and a non-light-emitting region distinct from the light-emitting region, and the plurality of light-collecting patterns are arranged in the non-light-emitting region.
The above light emitting diode is a light emitting diode display device which is a micro light emitting diode.
In the first paragraph,
A light emitting diode display device, wherein the plurality of light collection patterns include a first light collection pattern arranged at the periphery of the unit pixel.
In the second paragraph,
The above first light-emitting diode display device has a three-dimensional shape with inclined sides.
In the third paragraph,
A light emitting diode display device in which the lower cross-sectional area of the first light collection pattern is larger than the upper cross-sectional area.
In the third paragraph,
A light emitting diode display device in which the angle formed by the vertical normal of the substrate and the side surface of the first light collection pattern is between 65 degrees and 80 degrees.
In the second paragraph,
A light emitting diode display device, wherein the at least one light emitting diode includes a first light emitting diode and a second light emitting diode, and the plurality of light collection patterns further include a second light collection pattern disposed between the first light emitting diode and the second light emitting diode.
In paragraph 6,
A light emitting diode display device, wherein the distance between the second light condensing pattern and the first light emitting diode is the same as the distance between the second light condensing pattern and the second light emitting diode.
In the first paragraph,
A light emitting diode display device, wherein the non-emitting region includes a first region, a second region, a third region, and a fourth region, which are peripheral regions of the unit pixel, the first region facing the second region, the third region facing the fourth region, and the plurality of light-gathering patterns including at least one first light-gathering pattern, at least one second light-gathering pattern, at least one third light-gathering pattern, and at least one fourth light-gathering pattern, which are respectively arranged in the first region, the second region, the third region, and the fourth region.
In paragraph 8,
A light emitting diode display device wherein at least one first focusing pattern and at least one second focusing pattern have the same size.
In paragraph 8,
A light emitting diode display device wherein the at least one third light collecting pattern and the at least one fourth light collecting pattern have the same size.
In paragraph 10,
A light emitting diode display device having at least two third focusing patterns.
In the first paragraph,
A light emitting diode display device wherein the plurality of light collection patterns are positioned within the maximum brightness angle of at least one light emitting diode.
In paragraph 12,
A light emitting diode display device further comprising a protective substrate disposed on the substrate, wherein the plurality of light collecting patterns are disposed inside the protective substrate.
In paragraph 13,
A light emitting diode display device in which the density of the plurality of light-gathering patterns is smaller than the density of the protective substrate.
In paragraph 12,
A light emitting diode display device in which the above plurality of light collection patterns are formed inside the insulating layer.
In the first paragraph,
A light emitting diode display device, wherein at least one light emitting diode comprises an n-type layer, an active layer, a p-type layer, a first electrode electrically connected to the n-type layer, and a second electrode electrically connected to the p-type layer, which are sequentially stacked, and wherein the first electrode and the second electrode are arranged on the same surface. delete In paragraph 16,
A light emitting diode display device, wherein the insulating layer includes first to third insulating layers.
In paragraph 18,
The first electrode of the light-emitting diode is electrically connected to the thin film transistor through a first connection electrode disposed in a first hole formed in the second and third insulating layers,
A light emitting diode display device in which the second electrode of the light emitting diode is electrically connected to a common wiring through a second connection electrode arranged in a second hole formed in the second and third insulating layers.