KR102798852B1 - Centered Arc Ion Plating Evaporator - Google Patents

Abstract

The embodiment can provide a centered arc ion plating deposition device including: a vacuum chamber; a cylindrical target member arranged vertically at the center of the vacuum chamber and supplied with power to emit a target material; a gas injection means for injecting a process gas supplied from a supply gas means for supplying the process gas to generate plasma within the vacuum chamber into the vacuum chamber; and a mask device installed on the gas injection means for controlling diffusion of the target material and the process gas.

Description

Centered Arc Ion Plating Evaporator

The present invention relates to a centered arc ion plating deposition apparatus.

PVD sputtering is a method of depositing a thin film on a material surface (substrate) by utilizing the phenomenon in which, when accelerated, high-energy particles (mostly ions accelerated by an electric field) collide with the surface of a solid, atoms or molecules on the solid surface (target) absorb the momentum of the collided high-energy particles and are ejected from the solid surface with that momentum. Depending on the method of generating the glow discharge, it is largely divided into direct current (DC) and radio frequency (RF) sputtering. DC sputtering is a method in which a cathode and an anode are placed parallel to each other at a distance of about 5 to 15 cm, and a direct current is used to generate a glow discharge between them. In this process, Ar+ ions are accelerated and collide with the cathode in the plasma created here, which sputters the target material. RF sputtering is a method in which high frequency is used instead of DC to deposit an insulator.

PVD-ion plating is a method of forming a thin film by ionizing some of the generated deposition atoms or molecules, accelerating them in an electric field to create a high-energy state, and adsorbing them onto a substrate placed in a vacuum. The collision energy mixes the deposition particles to create a dense and strong excellent thin film, which is very effective in surface hardening of the material, and is mainly used for wear-resistant coatings on tool steels such as drill bits and saw blades.

In this way, various deposition technologies have been developed, and one of the various deposition technologies is applied depending on the type and characteristics of the deposition target. One of them is the arc ion plating technology, which is a center-type deposition equipment that discharges a high current arc up and down along a water-cooled pipe-shaped target such as titanium, zirconium, and chromium located at the center of the chamber (Korean Patent Publication No. 10-2022-0114676, Korean Patent Registration No. 1020773, Korean Patent Registration No. 1618209, Korean Patent Registration No. 2203825, Korean Patent Registration No. 0642175, U.S. Patent Registration No. 5269898, U.S. Patent Publication No. 2005-0044500, Japanese Patent Registration No. 5167282, Japanese Patent Registration No. 5847054). This arc vaporizes the target material in a plasma state and blows the ionized atoms to the coating target, and has the characteristic that the deposition speed of the ionized atoms is accelerated when a bias voltage is applied. In addition, depending on the coating method, a reactive gas such as nitrogen, oxygen, or acetylene is introduced into the chamber to form a thin film such as nitride, oxide, or carbide. These gases react with the ionized atoms to implement colors with various coating characteristics. However, in the case of a centered type deposition equipment, it is known to be technically very difficult to control the uniform movement of ions from the electrodes to the surface of the deposition target mounted on the plurality of jigs due to the structural characteristic that a plurality of jigs are positioned surrounding an electrode positioned at the center. In order to solve this problem, the prior art (Korean Patent Publication No. 0879380, Korean Patent Publication No. 2118319, Korean Patent Publication No. 1718094) configures the jig device to rotate or enables the rotation or change of position of the deposition target mounted on the jig device. However, there is a problem that a jig device must be redesigned to suit the type or size of the deposition target, and a high-quality, uniform coating layer cannot be obtained only by the rotation of the jig device or the rotation of the deposition target, so the above-mentioned problem is known to be a technical difficulty.

In this regard, Korean Patent Publication No. 1766204 discloses a screen surrounding a cathode electrode. This screen performs the function of removing large particles. In addition, US Patent Publication No. 2005-0044500 introduces a technology of installing a screen adjacent to an anode and controlling the amount of particles passing through the position control of the screen. However, it prevents large particles from being deposited on a deposition target, but does not guarantee obtaining a uniform coating layer on the surface of the deposition target.

Korean Patent Publication No. 10-2022-0114676 Korean Patent Publication No. 1020773 Korean Patent Publication No. 1618209 Korean Patent Publication No. 2203825 Korean Patent Publication No. 0642175 U.S. Patent Publication No. 5269898 United States Patent Publication No. 2005-0044500 Japanese Patent Publication No. 5167282 Japanese Patent Publication No. 5847054 Korean Patent Publication No. 0879380 Korean Patent Publication No. 2118319 Korean Patent Publication No. 1718094 Korean Patent Publication No. 1766204 United States Patent Publication No. 2005-0044500

The present invention provides a centered arc ion plating deposition apparatus capable of manufacturing a deposition target having a high-quality coating layer by controlling the formation of a uniform coating layer on the deposition target and the movement of a material to be coated depending on the type of the deposition target.

The present invention provides a centered arc ion plating deposition apparatus capable of resolving the problems that the color deposited on the surface of a deposition object varies depending on the type of process gas, a plurality of types of process gases are supplied into a vacuum chamber, and when each process gas is supplied into the vacuum chamber through a gas supply nozzle and then mixed inside the vacuum chamber, the process gases are not uniformly mixed inside the vacuum chamber and are also difficult to distribute uniformly, making it difficult to control the deposition color as desired and causing the deposition to not be uniform.

The present invention provides a centered arc ion plating deposition apparatus capable of preventing a target member from being overheated to solve the problem that when the target member is overheated, the resistance of the target member increases and metal atoms are not smoothly emitted from the target member even when electricity is supplied.

The embodiment can provide a centered arc ion plating deposition device including: a vacuum chamber; a cylindrical target member arranged vertically at the center of the vacuum chamber and supplied with power to emit a target material; a gas injection means for injecting a process gas supplied from a supply gas means for supplying the process gas to generate plasma within the vacuum chamber into the vacuum chamber; and a mask device installed on the gas injection means for controlling diffusion of the target material and the process gas.

In another aspect, the mask device can provide a centered arc ion plating deposition device including an expandable mask section configured to allow for change in size.

In another aspect, the mask device can provide a centered arc ion plating deposition device further including a rotating part for connecting the gas injection means and the expandable mask part to each other and rotating the expandable mask part at a predetermined angle.

In another aspect, the gas injection means can provide a centered arc ion plating deposition device having a gas discharge unit having a first discharge pipe arranged vertically in the vacuum chamber at a predetermined interval in the radial direction from the target member, wherein a plurality of first discharge holes are formed along the longitudinal direction so as to receive the process gas from the gas supply means at one end and inject it into the vacuum chamber, and a second discharge pipe having a plurality of second discharge holes formed along the longitudinal direction in a direction opposite to the first discharge holes so as to form a space separated by a predetermined interval from the first discharge pipe so as to receive the process gas injected from the first discharge hole and discharge the received process gas into the vacuum chamber.

In another aspect, the expanded mask portion can provide a centered arc ion plating deposition device that covers at least a portion of the plurality of first injection holes depending on the change in size.

In another aspect, a centered arc ion plating deposition device may be provided, further comprising a cooling means having an inlet for supplying cooling water into the interior of the target member, and an outlet for discharging the cooling water inside the target member, and a support for supporting the lower end of the target member so that the target member can be placed vertically in the center of the vacuum chamber.

In another aspect, a centered arc ion plating deposition apparatus includes a vacuum chamber, a cylindrical target member, a trigger, a gas supply means, a gas injection means, a spot blocking unit, and a control unit. The vacuum chamber has an exhaust port to create a vacuum inside. The target member is arranged vertically at the center of the vacuum chamber and receives power to emit a target material. The trigger generates an arc spot on the target member. The gas supply means has a plurality of supply gas units for respectively supplying each process gas to generate plasma in the vacuum chamber, and a gas mixing unit for mixing each process gas supplied from the supply gas units, and supplies the mixed process gas from the gas mixing unit to the vacuum chamber. The gas injection unit receives the process gas from the gas supply means and injects it into the vacuum chamber. The spot blocking units are respectively mounted on the upper and lower portions of the target member to limit the movement range of the arc spot. The control unit controls the power supplied to the target member.

In another aspect, it is preferable that the gas injection means of the centered arc ion plating deposition apparatus have a gas discharge unit including a first discharge pipe arranged vertically in the vacuum chamber at a predetermined distance from the target member in the radial direction so as to receive the process gas from the gas supply means at one end and inject it into the vacuum chamber, and a second discharge pipe having a plurality of second injection holes formed along the longitudinal direction in a direction opposite to the first injection hole so as to form a space separated by a predetermined distance from the first discharge pipe so as to receive the process gas injected from the first discharge hole and to discharge the received process gas into the vacuum chamber.

In another aspect, it is preferable that the gas injection means of the center-arc ion plating deposition device be provided in multiple numbers along the circumferential direction of the target member. In this case, the gas supply means supplies the process gas from the top to the first discharge pipe of one of the gas injection means, and from the bottom to the first discharge pipe of another adjacent gas injection means.

In another aspect, the second exhaust pipe of the centered arc ion plating deposition device preferably has the second injection hole facing in the opposite direction of the exhaust port so that the process gas is discharged in the opposite direction of the exhaust port.

In another aspect, the centered arc ion plating deposition apparatus includes a vacuum chamber, a hollow cylindrical target member, a cooling means, a trigger, a gas injection means, a spot blocking unit, and a control unit. The vacuum chamber makes the inside of the vacuum chamber vacuum. The hollow cylindrical target member has a predetermined thickness and is disposed inside the vacuum chamber and has an open bottom to receive power and discharge a target material. The cooling means has an inlet for supplying cooling water into the inside of the target member and an outlet for discharging the cooling water inside the target member, and has a support for supporting the bottom of the target member so that the target member can be disposed up and down at the center of the vacuum chamber. The trigger generates an arc spot on the target member. The gas injection means injects a process gas into the vacuum chamber to generate plasma within the vacuum chamber. The spot blocking unit is mounted on the upper and lower portions of the target member, respectively, to limit the movement range of the arc spot. The above control unit controls power supplied to the target member.

In another aspect, it is preferable that the cooling means of the centered arc ion plating deposition device further has a guide tube vertically mounted inside the target member so that both ends are open and the other end surrounds the discharge port so that the cooling water introduced into the injection port within the target member can be guided to be introduced into one end and discharged to the discharge port through the other end.

In another aspect, the support of the centered arc ion plating deposition apparatus is preferably formed with the outlet formed radially in the center of the support so that the cooling water can flow into the outer periphery of the target member and be discharged to the center, and the injection port is formed radially and at a certain distance from the outlet. In this case, the guide tube is formed so that the injection port is located on the outside of the guide tube so that the cooling water flowing into the injection port can flow along the outer periphery, flow into the inner periphery, and be discharged through the outlet.

The embodiment can provide a centered arc ion plating deposition apparatus capable of manufacturing a deposition target having a high-quality coating layer by controlling the formation of a uniform coating layer on the deposition target and the movement of a material to be coated depending on the type of the deposition target.

In the embodiment, process gas is mixed in a gas supply means, and the mixed process gas is injected into the inside of a vacuum chamber through a second injection hole formed along the longitudinal direction of the gas injection means. Therefore, the process gas can be uniformly mixed and distributed within the vacuum chamber. This makes it easy to control the color and thickness of the deposited substrate.

In the embodiment, cooling water is supplied and discharged into the interior of the target member through the support. Therefore, even if the target member is heated, the cooling water cools the target member, thereby preventing the target member from overheating. Therefore, the emission efficiency of metal atoms in the target member can be maintained.

FIG. 1a and FIG. 1b schematically illustrate a centered arc ion plating deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic diagram illustrating the interior of a center-arc ion plating deposition apparatus according to an embodiment of the present invention as viewed from above.
Figure 3 schematically illustrates a gas injection means.
Figure 4 schematically illustrates an injection hole in a gas injection means.
Figure 5 is an enlarged view of the target member and cooling means.
Figure 6 schematically illustrates a jig device mounted in an embodiment of the present invention.
FIG. 7 is a schematic diagram illustrating the interior of a center-arc ion plating deposition equipment having a jig device installed according to an embodiment of the present invention.
FIG. 8 is a perspective view of an arc ion plating deposition equipment according to another embodiment of the present invention.
Figure 9 is a schematic diagram illustrating the interior of the arc ion plating deposition equipment of Figure 8 with the jig device installed.
Figure 10 is a schematic diagram illustrating the interior of the arc ion plating deposition equipment of Figure 8 in plan view.
Figure 11 is a schematic diagram for explaining the operation of a mask device installed in a gas injection means.
FIG. 12 is a diagram for explaining a method for controlling a spot by a control unit and a power unit constituting an arc ion plating deposition device according to an embodiment of the present invention.

The present invention can be modified in various ways and has various embodiments, and thus specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention and the methods for achieving them will become clear with reference to the embodiments described in detail below together with the drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various forms. In the following embodiments, the terms first, second, etc. are not used in a limiting sense, but are used for the purpose of distinguishing one component from another component. In addition, the singular expression includes the plural expression unless the context clearly indicates otherwise. In addition, the terms include or have mean that the features or components described in the specification are present, and do not preemptively exclude the possibility that one or more other features or components may be added. In addition, the sizes of the components in the drawings may be exaggerated or reduced for the convenience of explanation. For example, the sizes and thicknesses of each component shown in the drawings are arbitrarily shown for the convenience of explanation, and therefore the present invention is not necessarily limited to what is shown.

Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. When describing with reference to the drawings, identical or corresponding components are given the same drawing reference numerals and redundant descriptions thereof are omitted.

FIG. 1A and FIG. 1B schematically illustrate a centered arc ion plating deposition apparatus according to an embodiment of the present invention, FIG. 2 schematically illustrates the interior of the centered arc ion plating deposition apparatus according to an embodiment of the present invention when viewed from above, FIG. 3 schematically illustrates a gas injection means, and FIG. 4 schematically illustrates an injection hole in the gas injection means.

Referring to FIGS. 1A to 4, one embodiment of a centered arc ion plating deposition apparatus according to the present invention is described.

A centered arc ion plating deposition device (1) according to an embodiment of the present invention includes a vacuum chamber (10), a cylindrical target member (15), a trigger (20), a gas supply means (25), a gas injection means (30), a spot blocking unit (35), an ion source (16), and a control unit (not shown).

A centered arc ion plating deposition device (1) according to an embodiment of the present invention may be configured as a two-door type. The vacuum chamber (10) is configured with a first door chamber (10a) and a second door chamber (10b), and either the first door chamber (10a) or the second door chamber (10b) can be connected to a main chamber (10c) and perform a deposition process.

Each of the first and second door chambers (10a, 10b) may be provided with a cylindrical target member (15), a trigger (20), a gas supply means (25), a gas injection means (30), a spot blocking unit (35), at least one ion source (16), and a control unit.

The pressure of the internal space of the vacuum chamber (10) is maintained in a vacuum state by a vacuum pump.

An exhaust port (11) is formed in the vacuum chamber (10), and when the vacuum pump operates, the air inside the vacuum chamber (10) is discharged through the exhaust port (11) by the vacuum pump and maintained as a vacuum.

The exhaust port (11) may be located on one side of the vacuum chamber (10). The exhaust port (110) may be installed in the main chamber (10c).

In various embodiments, the exhaust port (11) may be located at the rear side within the main chamber (10c).

The internal vacuum pressure of the vacuum chamber (10) in a state where either one of the first and second door chambers (10a, 10b) and the main chamber (10c) are connected may be approximately 1.0 to 5.0 × 10-5 Torr, but is not limited thereto.

The target member (15) serves as a source of a film to be deposited on the surface of the deposition object. It is mainly formed of a titanium group element such as titanium (Ti) or zirconium (Zr), and is mounted from top to bottom in the center of the inside of the vacuum chamber (10). Power is applied to the target member (15) from the top and bottom, and when power is supplied and an arc spot is generated, surface particles are vaporized or ionized. Therefore, the evaporated metal ions, etc. move by an electric field, diffusion, etc. At this time, when a process gas is introduced into the vacuum chamber (10), the evaporated metal ions and the process gas can combine to be deposited on the deposition object.

The trigger (20) generates an arc on the target member (15). When the arc is generated, the arc moves up and down along the surface of the target member (15).

The gas supply means (25) serves to supply process gas for generating plasma within the vacuum chamber (10). For this purpose, the gas supply means (25) is provided with a plurality of supply gas sections (26) and a gas mixing section (28). A plurality of supply gas sections (26) are prepared for each gas to be injected, and supply the gas respectively. The supplied supply gases include argon (Ar), nitrogen (N2), acetylene (C2H2), oxygen (O2), etc., and can be selectively injected depending on the color of the coating.

The gas mixing unit (28) mixes each process gas supplied from the supply gas unit (26). If each gas is directly supplied from the supply gas unit (26) into the interior of the vacuum chamber (10), the supply gases are not uniformly mixed within the vacuum chamber (10), and thus the coating performance deteriorates. Therefore, the gas mixing unit (28) mixes the process gases supplied from each supply gas unit (26) and supplies them to the vacuum chamber (10).

The gas injection means (30) receives process gas from the gas supply means (25) and injects it into the vacuum chamber (10). To this end, the gas injection means (30) is equipped with a first discharge pipe (31) and a second discharge pipe (33) to further mix and inject the process gas.

The first discharge pipe (31) can receive process gas from the gas supply means (25) at the end, and is vertically arranged at a predetermined interval in the radial direction from the target member (15) inside the vacuum chamber (10). At this time, the first discharge pipe (31) has a plurality of first injection holes (31a) formed along the longitudinal direction to inject the process gas toward the vacuum chamber (10). The second discharge pipe (33) surrounds the first discharge pipe (31) so that a receiving portion (34) is formed at a predetermined interval from the first discharge pipe (31) so that it can receive the first discharge pipe (31). Therefore, the process gas injected from the first injection hole (31a) can be received in the receiving portion (34) inside the second discharge pipe (33). And the second discharge pipe (33) is formed with a plurality of second discharge holes (33a) spaced apart at a certain interval along the longitudinal direction so that the process gas injected from the first discharge hole (31a) and received in the receiving portion (34) can be injected into the interior of the vacuum chamber (10). At this time, the gas injection means (30) may be formed so that the directions of the first injection hole (31a) and the second injection hole (33a) are opposite so that the process gas supplied from the gas supply means (25) can be further mixed inside. That is, if the first injection hole (31a) and the second injection hole (33a) are formed in the same direction, the process gas injected from the first injection hole (31a) can be directly discharged through the second injection hole (33a), so in this case it is difficult for the process gases to be mixed. Therefore, the second injection hole (33a) is formed in the opposite direction of the first injection hole (31a) so that the gas can be mixed once more inside the second discharge pipe (33). Therefore, when the process gas is injected from the first injection hole (31a), it is received in the receiving portion (34) inside the first discharge pipe (33), mixed once more, and then discharged through the second injection hole (33a) formed in the opposite direction to the first injection hole (31a). Meanwhile, the second injection hole (33a) is formed in multiple numbers along the longitudinal direction in the second discharge pipe (33). Therefore, the second injection holes (33a) are formed at regular intervals vertically inside the vacuum chamber (10) to inject the process gas, so that the process gas can be uniformly distributed within the vacuum chamber (10).

At this time, a plurality of gas injection means (30) are formed. In the case of this embodiment, two gas injection means (30) are formed at 180-degree intervals. Therefore, in order to make the mixing of the process gas supplied inside the vacuum chamber (10) more uniform, in the case of the first gas injection means (30), the process gas is supplied from the gas supply means (25) to the upper end of the first discharge pipe (31), and in the case of the second gas injection means (30), the process gas is supplied to the lower end of the first discharge pipe (31).

Meanwhile, the vacuum chamber (10) is maintained as a vacuum inside by a vacuum pump. Therefore, the air inside is continuously discharged through the exhaust port (11). At this time, if the process gas is sprayed in the direction of the exhaust port (11), it can be easily discharged to the outside by the vacuum pump, so the gas spraying means (30) forms a second spray hole (33a) so that the discharged process gas is directed in the opposite direction of the exhaust port (11) toward the target member (15). Therefore, in the case of the present embodiment, as shown in FIG. 2, the second spray hole (33a) is formed so that the process gas can be sprayed at an angle of 45 degrees toward the target member (15) in the opposite direction of the exhaust port (11).

Spot blocking parts (35) are respectively mounted on the upper and lower parts of the target member (14) to limit the range of movement of the arc spot. The spot blocking parts (35) are equipped with permanent magnets to form a magnetic field, thereby preventing the arc spot from moving further along the target member (14).

The control unit controls the power supplied to the target member (15). The target member (15) is supplied with power at different voltages so as to have a potential difference at the top and bottom. Here, the control unit controls the voltage to be alternately high at the top and bottom at regular time intervals. Therefore, the direction of the arc spot can be changed, such as moving downward and then upward at regular time intervals.

In the embodiment, the process gas is mixed in the gas supply means (25) and supplied to the vacuum chamber (10), and is mixed once more in the gas injection means (30) before being sprayed inside the vacuum chamber (10), so that the process gas can be uniformly mixed. In addition, since a plurality of second injection holes (33a) are formed at a predetermined interval along the longitudinal direction in the second discharge pipe (33) of the gas injection means (30), the process gas can be sprayed so as to be uniformly distributed inside the vacuum chamber (10), and since the process gas is sprayed in the opposite direction of the exhaust port (11) of the vacuum chamber (10), the loss of the process gas can be reduced.

Figure 5 is an enlarged view of the target member and cooling means.

Referring to FIG. 1b and FIG. 5, when power is supplied to the target member (15) and an arc spot continues to occur, the target member (15) overheats and the resistance increases. Therefore, to prevent this, the target member (15) of the present embodiment has a certain thickness and is formed hollow so that it can accommodate cooling water (54) inside, and the bottom is open.

The cooling means (50) serves to supply and discharge cooling water (54) into the interior of the target member (15) to prevent the target member (15) from being overheated. To this end, the cooling means (50) is provided with a support (51) and a guide tube (53). The support (51) is mounted at the lower part of the center of the vacuum chamber (10) and supports the lower part of the target member (15) so that the target member (15) can be arranged vertically in the center of the vacuum chamber (10). At this time, the support (15) is formed with an injection port (51a) for supplying cooling water (54) to the target member (15) and an exhaust port (51b) for discharging cooling water (54) contained in the target member (15). Here, a discharge port (51b) is formed in the center so that the coolant (54) can be supplied to the inner surface of the target member (15) and discharged from the center, and an injection port (51a) is formed at a certain distance in the radial direction from the discharge port (51b). This is to allow the coolant (54) introduced from the injection port (51a) to contact the target member (15) and cool the target member (15), and to discharge the coolant (54) heated from the target member (15) from the center of the target member (15).

The guide tube (53) serves to guide the coolant (54) within the target member (15) so that it can flow along the inner surface and reach the center. To this end, the guide tube (53) is opened at both ends and installed within the target member (15). At this time, the guide tube (53) is arranged so that the coolant (54) introduced into the target member (15) through the injection port (51a) flows axially along the inner surface of the target member (15), enters one end of the guide tube (53), and then exits through the other end of the guide tube (53) to the discharge port (51b). Therefore, the guide tube (53) is installed vertically so that the other end surrounds the discharge port (51b), and the injection port (51a) is located outside the guide tube (53).

Figure 6 schematically illustrates a jig device mounted in an embodiment of the present invention.

In Fig. 6, (a) is a plan view of the jig device, and (b) is a front view of the jig device and an enlarged view of the deposition target and the jig arm, which are part of the jig device.

FIG. 7 is a schematic diagram illustrating the interior of a center-arc ion plating deposition equipment having a jig device installed according to an embodiment of the present invention.

Referring to FIG. 1a, FIG. 6 and FIG. 7, the jig device (80) is mounted on the first door chamber (10a) and the second door chamber (10b). The jig device (80) is installed on a rotation device (38) provided in each of the first door chamber (10a) and the second door chamber (10b) and can rotate on its own axis. In addition, a plurality of jig devices (80) can be mounted on the first door chamber (10a) and the second door chamber (10b) and can rotate around the target member (15) by an idle device (39) provided in each of the first door chamber (10a) and the second door chamber (10b). The jig device (80) rotates around the jig rod (81) described later as an axis by the rotation device (38) and revolves through the orbital device (39), thereby forming a coating layer on the surfaces of a plurality of deposition targets (90) mounted on the jig device (80). In addition, when one of the first door chamber (10a) and the second door chamber (10b) is connected to the main chamber (10c) and the deposition process is in progress, the deposition device (80) can be separated in the other door chamber where the deposition process is completed, and the deposition target (90) mounted on the jig device (80) can be separated from the jig device (80) to obtain a coated deposition target (90).

The jig device (80) may be composed of a jig rod (81), a jig plate (82), and a jig arm (83). The lower portion of the jig rod (81) may be formed into a structure that is fastened to a rotating device.

A jig plate (82) can be installed on the jig rod (81). The jig plates (82) are composed of a plurality of pieces, and they can be installed on the jig rod (81) while being spaced apart from each other. Accordingly, a plurality of jig plates (82) can be installed on the jig rod (81) in a multi-layer structure.

A plurality of jig arms (83) may be formed on the jig plate (82). Each of the plurality of jig arms (83) may be configured to extend from the jig plate (82) and be inclined at a predetermined angle. A deposition target (90) may be placed on each of the jig arms (83). Since the jig arms (83) have a shape inclined at a predetermined angle, the deposition target (90) placed on the jig arms (83) may also be placed inclined at a predetermined angle. However, the jig arms (83) of the jig device (80) are not limited to those described above or illustrated in the drawings, and may have various shapes, which may vary depending on the type of the deposition target (90) and the components of the coaching layer.

FIG. 8 is a perspective view of an arc ion plating deposition equipment according to another embodiment of the present invention, FIG. 9 is a schematic diagram illustrating the interior of the arc ion plating deposition equipment of FIG. 8 with a jig device installed, FIG. 10 is a plan view schematically illustrating the interior of the arc ion plating deposition equipment of FIG. 8, and FIG. 11 is a schematic diagram for explaining the operation of a mask device installed in a gas injection means.

Referring to FIGS. 8 to 11, a mask device (70) may be installed in the gas injection means (30) of the arc ion plating deposition equipment (1) according to another embodiment of the present invention.

A mask device (70) can be installed on each of two gas injection means (30) positioned with a cylindrical target member (15) spaced 180 degrees apart. The two mask devices (70) can be positioned facing each other.

The mask device (70) can be located in the upper region of the gas injection means (30).

The mask device (70) may include a rotating part (71) and an expandable mask part (72).

The rotating part (71) can be installed on the gas injection means (30). The rotating part (71) can be installed along the perimeter of one area of the gas injection means (30). The expandable mask part (72) can be installed on the rotating part (71). The control part can control the rotating part (71) to control the expandable mask part (72) to rotate along the perimeter of the gas injection means (30) at a predetermined rotation angle. The control part can control the position of the expandable mask part (72) by controlling the rotating part (71), thereby controlling the amount or direction of gas injected from the gas injection means (30), and can further increase the uniformity of the coating layer on the surface of the deposition target (90) by controlling the movement of evaporated metal ions, etc. when the surface particles of the cylindrical target member (15) are vaporized or ionized by an electric field, diffusion, etc.

The extended mask portion (72) may be configured as a plate type. The extended mask portion (72) may be configured with a main mask (72a) and first and second auxiliary masks (72b, 72c). The first auxiliary mask (72b) can be stored inside the main mask (72a), and the second auxiliary mask (72c) can be stored inside the first auxiliary mask (72b), and as a result, can be stored inside the main mask (72a).

The first auxiliary mask (72b) is configured to be withdrawable from the main mask (72a) in the downward direction of the main mask (72a), and the second auxiliary mask (72c) is configured to be withdrawable from the first auxiliary mask (72b) in the downward direction of the first auxiliary mask (72b).

The control unit can adjust the overall size of the expandable mask portion (72) by controlling the withdrawal or storage of the first and second auxiliary masks (72b, 72c). Specifically, the control unit can adjust the upper and lower lengths of the expandable mask portion (72).

In various embodiments, at least some of the plurality of second exhaust holes (33a) provided in the gas injection means (30) may be covered depending on a change in the size of the expandable mask portion (72).

In various embodiments, regardless of the change in the size of the expandable mask portion (72), all of the second exhaust holes (33a) can be opened according to the rotation angle of the expandable mask portion (72) on the rotating portion (71).

In addition, the gas output from at least some of the second exhaust holes (33a) among the plurality of second exhaust holes is sprayed onto the expandable mask part (72), and depending on the rotation angle of the expandable mask part (72) on the rotating part (71), the gas may be reflected by the expandable mask part (72) and diffuse in another direction.

The control unit can physically control the direction of diffusion of ions into the deposition target (90) and the amount of movement in a specific direction of gas ejected from the gas ejection means (30) by adjusting the size of the expandable mask unit (72) and the position of the expandable mask unit (72) by the rotation unit (71). Accordingly, a uniform and high-quality coating layer can be applied to the deposition target (90) by flexibly responding to the number, type, and coating layer components of the deposition target (90) mounted on the jig device (80).

FIG. 12 is a diagram for explaining a method for controlling a spot by a control unit and a power unit constituting an arc ion plating deposition device according to an embodiment of the present invention.

Referring to FIG. 12, in an embodiment, the control unit (200) and the power unit (300) may be configured to be physically separated from each other. The control unit (200) is connected to the power unit (300) via a control line so that they can communicate with each other. In various embodiments, the control unit (200) may exchange communication data with an external computing device. The control unit (200) may cause an arc discharge in a cylindrical target member (15) through triggering by a high voltage or triggering by a trigger (20).

In addition, the power unit (300) can control the arc time by applying power to each electrode at one end and the other end of the cylindrical target member (15) and controlling the time of the power applied to each electrode, and can control the speed and output of the arc spot.

The embodiments of the present invention described above may be implemented in the form of program commands that can be executed through various computer components and recorded on a computer-readable recording medium. The computer-readable recording medium may include program commands, data files, data structures, etc., alone or in combination. The program commands recorded on the computer-readable recording medium may be those specially designed and configured for the present invention or those known and available to those skilled in the art of computer software. Examples of the computer-readable recording medium include magnetic media such as hard disks, floppy disks, and magnetic tapes, optical recording media such as CD-ROMs and DVDs, magneto-optical media such as floptical disks, and hardware devices specially configured to store and execute program commands, such as ROMs, RAMs, and flash memories. Examples of the program commands include not only machine language codes generated by a compiler, but also high-level language codes that can be executed by a computer using an interpreter, etc. The hardware devices may be changed into one or more software modules to perform processing according to the present invention, and vice versa.

The specific implementations described in the present invention are only exemplary embodiments and do not limit the scope of the present invention in any way. For the sake of brevity of the specification, descriptions of conventional electronic configurations, control systems, software, and other functional aspects of the systems may be omitted. In addition, the connections or lack of connections of lines between components illustrated in the drawings are merely exemplary of functional connections and/or physical or circuit connections, and may be replaced or represented as various additional functional connections, physical connections, or circuit connections in an actual device. In addition, if there is no specific mention such as “essential,” “important,” etc., it may not be a component absolutely necessary for the application of the present invention.

In addition, although the detailed description of the present invention has been described with reference to preferred embodiments of the present invention, it will be understood by those skilled in the art or having common knowledge in the art that various modifications and changes can be made to the present invention without departing from the spirit and technical scope of the present invention as described in the claims below. Accordingly, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

Claims (6)

vacuum chamber;
A cylindrical target member arranged vertically in the center of the vacuum chamber to receive power and emit a target material;
A gas injection means for injecting the process gas supplied from the supply gas section into the vacuum chamber to generate plasma within the vacuum chamber; and
A mask device installed in the above gas injection means to control the diffusion of the target material and the process gas;
The above gas injection means includes a first discharge pipe that receives process gas from the supply gas unit, and a second discharge pipe that accommodates the first discharge pipe and discharges the supplied process gas into the vacuum chamber.
The above mask device includes a rotating part arranged along a perimeter of a region of the second discharge pipe, and an expandable mask part connected to the rotating part,
The above-mentioned extended mask part is composed of a main mask of a plate-type structure, a first auxiliary mask that can be stored inside the main mask, and a second auxiliary mask that can be stored inside the first auxiliary mask.
The above first and second auxiliary masks control the diffusion direction or the amount of movement in a specific direction of the process gas discharged while being withdrawn or received in the longitudinal direction of the second discharge pipe.
Centered arc ion plating deposition equipment. In the first paragraph,
The above-mentioned expandable mask part rotates along the circumference of the second discharge pipe by the above-mentioned rotating part.
Centered arc ion plating deposition equipment. In the second paragraph,
The above first discharge pipe is arranged to be spaced apart from the target member at a certain interval, and a plurality of first injection holes are formed along the length direction.
The second discharge pipe is arranged so that a space is formed at a certain distance from the first discharge pipe so that the process gas injected from the first injection hole can be received, and a plurality of second injection holes are formed along the length direction so that the process gas injected from the first injection hole can be discharged into the vacuum chamber.
Centered arc ion plating deposition equipment. In the third paragraph,
The above-mentioned extended mask part covers or opens some of the plurality of second injection holes by withdrawing and storing the first and second auxiliary masks.
Centered arc ion plating deposition equipment. In the fourth paragraph,
A cooling means further comprising a support member that supports the lower end of the target member so that the target member can be placed up and down in the center of the vacuum chamber, wherein an inlet for supplying cooling water into the interior of the target member and an outlet for discharging the cooling water inside the target member are formed.
Centered arc ion plating deposition equipment. delete