KR102784271B1 - Photosensitive resin composition, cured material thereof, substrate with that cured material, and producing method of that substrate - Google Patents
Photosensitive resin composition, cured material thereof, substrate with that cured material, and producing method of that substrate Download PDFInfo
- Publication number
- KR102784271B1 KR102784271B1 KR1020200036056A KR20200036056A KR102784271B1 KR 102784271 B1 KR102784271 B1 KR 102784271B1 KR 1020200036056 A KR1020200036056 A KR 1020200036056A KR 20200036056 A KR20200036056 A KR 20200036056A KR 102784271 B1 KR102784271 B1 KR 102784271B1
- Authority
- KR
- South Korea
- Prior art keywords
- group
- photosensitive resin
- resin composition
- acid
- cured film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011342 resin composition Substances 0.000 title claims abstract description 75
- 239000000758 substrate Substances 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims description 30
- 239000000463 material Substances 0.000 title description 16
- 150000001875 compounds Chemical class 0.000 claims abstract description 75
- 239000004593 Epoxy Substances 0.000 claims abstract description 69
- 229920005989 resin Polymers 0.000 claims abstract description 55
- 239000011347 resin Substances 0.000 claims abstract description 55
- 239000002904 solvent Substances 0.000 claims abstract description 36
- 238000011161 development Methods 0.000 claims abstract description 31
- 239000007787 solid Substances 0.000 claims abstract description 30
- 239000003999 initiator Substances 0.000 claims abstract description 20
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 claims abstract description 17
- 125000003700 epoxy group Chemical group 0.000 claims abstract description 14
- 239000000178 monomer Substances 0.000 claims abstract description 8
- -1 fluorene-9,9-diyl group Chemical group 0.000 claims description 54
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 52
- 239000002245 particle Substances 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 20
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 18
- 125000000217 alkyl group Chemical group 0.000 claims description 17
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 14
- 239000003086 colorant Substances 0.000 claims description 11
- 125000001424 substituent group Chemical group 0.000 claims description 11
- 125000004432 carbon atom Chemical group C* 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 claims description 9
- 239000012860 organic pigment Substances 0.000 claims description 9
- 125000003118 aryl group Chemical group 0.000 claims description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- 125000005843 halogen group Chemical group 0.000 claims description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 239000001023 inorganic pigment Substances 0.000 claims description 4
- 125000002947 alkylene group Chemical group 0.000 claims description 3
- 125000003277 amino group Chemical group 0.000 claims description 3
- 125000002252 acyl group Chemical group 0.000 claims description 2
- 125000003545 alkoxy group Chemical group 0.000 claims description 2
- 125000006165 cyclic alkyl group Chemical group 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 125000002843 carboxylic acid group Chemical group 0.000 claims 2
- 239000002981 blocking agent Substances 0.000 claims 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims 1
- 239000003513 alkali Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 129
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 55
- 239000002253 acid Substances 0.000 description 33
- 238000011156 evaluation Methods 0.000 description 30
- 238000000576 coating method Methods 0.000 description 29
- 230000018109 developmental process Effects 0.000 description 29
- 239000011248 coating agent Substances 0.000 description 28
- 239000000049 pigment Substances 0.000 description 28
- 239000006185 dispersion Substances 0.000 description 22
- 150000008065 acid anhydrides Chemical class 0.000 description 18
- 238000001723 curing Methods 0.000 description 18
- 239000002270 dispersing agent Substances 0.000 description 18
- 239000000243 solution Substances 0.000 description 18
- 150000003628 tricarboxylic acids Chemical class 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 17
- 150000002009 diols Chemical class 0.000 description 16
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 16
- 239000000203 mixture Substances 0.000 description 15
- 238000004040 coloring Methods 0.000 description 13
- 239000011521 glass Substances 0.000 description 13
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 12
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 12
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 11
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 10
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 150000002430 hydrocarbons Chemical group 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Inorganic materials [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 238000003786 synthesis reaction Methods 0.000 description 9
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 9
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 8
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 8
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 7
- 239000004215 Carbon black (E152) Substances 0.000 description 7
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 7
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 7
- 229930195733 hydrocarbon Natural products 0.000 description 7
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 7
- 229910052753 mercury Inorganic materials 0.000 description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 6
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 6
- 150000001732 carboxylic acid derivatives Chemical group 0.000 description 6
- 150000001991 dicarboxylic acids Chemical class 0.000 description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- 238000005227 gel permeation chromatography Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 150000005846 sugar alcohols Polymers 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- 238000013007 heat curing Methods 0.000 description 5
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 5
- 239000011112 polyethylene naphthalate Substances 0.000 description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- HWCKGOZZJDHMNC-UHFFFAOYSA-M tetraethylammonium bromide Chemical compound [Br-].CC[N+](CC)(CC)CC HWCKGOZZJDHMNC-UHFFFAOYSA-M 0.000 description 5
- UFDHBDMSHIXOKF-UHFFFAOYSA-N tetrahydrophthalic acid Natural products OC(=O)C1=C(C(O)=O)CCCC1 UFDHBDMSHIXOKF-UHFFFAOYSA-N 0.000 description 5
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 4
- 229930185605 Bisphenol Natural products 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 4
- 239000006229 carbon black Substances 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 125000006159 dianhydride group Chemical group 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 4
- 239000003112 inhibitor Substances 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 238000000016 photochemical curing Methods 0.000 description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000012719 thermal polymerization Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 4
- GGAUUQHSCNMCAU-ZXZARUISSA-N (2s,3r)-butane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C[C@H](C(O)=O)[C@H](C(O)=O)CC(O)=O GGAUUQHSCNMCAU-ZXZARUISSA-N 0.000 description 3
- QYGBYAQGBVHMDD-XQRVVYSFSA-N (z)-2-cyano-3-thiophen-2-ylprop-2-enoic acid Chemical compound OC(=O)C(\C#N)=C/C1=CC=CS1 QYGBYAQGBVHMDD-XQRVVYSFSA-N 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 3
- JVERADGGGBYHNP-UHFFFAOYSA-N 5-phenylbenzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C=2C=CC=CC=2)=C1C(O)=O JVERADGGGBYHNP-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000008064 anhydrides Chemical class 0.000 description 3
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 3
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- IFDVQVHZEKPUSC-UHFFFAOYSA-N cyclohex-3-ene-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCC=CC1C(O)=O IFDVQVHZEKPUSC-UHFFFAOYSA-N 0.000 description 3
- ISAOCJYIOMOJEB-UHFFFAOYSA-N desyl alcohol Natural products C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 3
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000003918 potentiometric titration Methods 0.000 description 3
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 3
- KMOUUZVZFBCRAM-UHFFFAOYSA-N 1,2,3,6-tetrahydrophthalic anhydride Chemical compound C1C=CCC2C(=O)OC(=O)C21 KMOUUZVZFBCRAM-UHFFFAOYSA-N 0.000 description 2
- GIWQSPITLQVMSG-UHFFFAOYSA-N 1,2-dimethylimidazole Chemical compound CC1=NC=CN1C GIWQSPITLQVMSG-UHFFFAOYSA-N 0.000 description 2
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 2
- FDSUVTROAWLVJA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)COCC(CO)(CO)CO FDSUVTROAWLVJA-UHFFFAOYSA-N 0.000 description 2
- PTJWCLYPVFJWMP-UHFFFAOYSA-N 2-[[3-hydroxy-2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)COCC(CO)(CO)CO PTJWCLYPVFJWMP-UHFFFAOYSA-N 0.000 description 2
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 2
- LAQYHRQFABOIFD-UHFFFAOYSA-N 2-methoxyhydroquinone Chemical compound COC1=CC(O)=CC=C1O LAQYHRQFABOIFD-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 2
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical class C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 2
- UITKHKNFVCYWNG-UHFFFAOYSA-N 4-(3,4-dicarboxybenzoyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 UITKHKNFVCYWNG-UHFFFAOYSA-N 0.000 description 2
- OECTYKWYRCHAKR-UHFFFAOYSA-N 4-vinylcyclohexene dioxide Chemical compound C1OC1C1CC2OC2CC1 OECTYKWYRCHAKR-UHFFFAOYSA-N 0.000 description 2
- YWFPGFJLYRKYJZ-UHFFFAOYSA-N 9,9-bis(4-hydroxyphenyl)fluorene Chemical compound C1=CC(O)=CC=C1C1(C=2C=CC(O)=CC=2)C2=CC=CC=C2C2=CC=CC=C21 YWFPGFJLYRKYJZ-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 2
- ROWKJAVDOGWPAT-UHFFFAOYSA-N Acetoin Chemical compound CC(O)C(C)=O ROWKJAVDOGWPAT-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 2
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 2
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 244000028419 Styrax benzoin Species 0.000 description 2
- 235000000126 Styrax benzoin Nutrition 0.000 description 2
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- DEIWDECRWOVFGW-UHFFFAOYSA-N cycloheptane-1,1,2,2-tetracarboxylic acid Chemical compound C1(C(CCCCC1)(C(=O)O)C(=O)O)(C(=O)O)C(=O)O DEIWDECRWOVFGW-UHFFFAOYSA-N 0.000 description 1
- RZIPTXDCNDIINL-UHFFFAOYSA-N cyclohexane-1,1,2,2-tetracarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCCCC1(C(O)=O)C(O)=O RZIPTXDCNDIINL-UHFFFAOYSA-N 0.000 description 1
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- YZFOGXKZTWZVFN-UHFFFAOYSA-N cyclopentane-1,1-dicarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCCC1 YZFOGXKZTWZVFN-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
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- 239000003759 ester based solvent Substances 0.000 description 1
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- 150000002170 ethers Chemical class 0.000 description 1
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- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- JNWGOCSTXJQFEP-UHFFFAOYSA-N hexane-1,1,1,2-tetracarboxylic acid Chemical compound CCCCC(C(O)=O)C(C(O)=O)(C(O)=O)C(O)=O JNWGOCSTXJQFEP-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
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- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 125000002883 imidazolyl group Chemical group 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- PXZQEOJJUGGUIB-UHFFFAOYSA-N isoindolin-1-one Chemical compound C1=CC=C2C(=O)NCC2=C1 PXZQEOJJUGGUIB-UHFFFAOYSA-N 0.000 description 1
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- 125000001624 naphthyl group Chemical group 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- NWAHZAIDMVNENC-UHFFFAOYSA-N octahydro-1h-4,7-methanoinden-5-yl methacrylate Chemical compound C12CCCC2C2CC(OC(=O)C(=C)C)C1C2 NWAHZAIDMVNENC-UHFFFAOYSA-N 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- MIVZUXGHPJSKRI-UHFFFAOYSA-N pentane-1,1,1,2-tetracarboxylic acid Chemical compound CCCC(C(O)=O)C(C(O)=O)(C(O)=O)C(O)=O MIVZUXGHPJSKRI-UHFFFAOYSA-N 0.000 description 1
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical compound C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229950000688 phenothiazine Drugs 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- ZJLMKPKYJBQJNH-UHFFFAOYSA-N propane-1,3-dithiol Chemical compound SCCCS ZJLMKPKYJBQJNH-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- FYNROBRQIVCIQF-UHFFFAOYSA-N pyrrolo[3,2-b]pyrrole-5,6-dione Chemical compound C1=CN=C2C(=O)C(=O)N=C21 FYNROBRQIVCIQF-UHFFFAOYSA-N 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- IZMJMCDDWKSTTK-UHFFFAOYSA-N quinoline yellow Chemical compound C1=CC=CC2=NC(C3C(C4=CC=CC=C4C3=O)=O)=CC=C21 IZMJMCDDWKSTTK-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- WPPDXAHGCGPUPK-UHFFFAOYSA-N red 2 Chemical compound C1=CC=CC=C1C(C1=CC=CC=C11)=C(C=2C=3C4=CC=C5C6=CC=C7C8=C(C=9C=CC=CC=9)C9=CC=CC=C9C(C=9C=CC=CC=9)=C8C8=CC=C(C6=C87)C(C=35)=CC=2)C4=C1C1=CC=CC=C1 WPPDXAHGCGPUPK-UHFFFAOYSA-N 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 125000001302 tertiary amino group Chemical group 0.000 description 1
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- CWERGRDVMFNCDR-UHFFFAOYSA-M thioglycolate(1-) Chemical compound [O-]C(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-M 0.000 description 1
- JOUDBUYBGJYFFP-FOCLMDBBSA-N thioindigo Chemical compound S\1C2=CC=CC=C2C(=O)C/1=C1/C(=O)C2=CC=CC=C2S1 JOUDBUYBGJYFFP-FOCLMDBBSA-N 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- FRGPKMWIYVTFIQ-UHFFFAOYSA-N triethoxy(3-isocyanatopropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCN=C=O FRGPKMWIYVTFIQ-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- CMLWFCUAXGSMBB-UHFFFAOYSA-N tris(2,6-dimethoxyphenyl)phosphane Chemical compound COC1=CC=CC(OC)=C1P(C=1C(=CC=CC=1OC)OC)C1=C(OC)C=CC=C1OC CMLWFCUAXGSMBB-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- JLQFVGYYVXALAG-CFEVTAHFSA-N yasmin 28 Chemical compound OC1=CC=C2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1.C([C@]12[C@H]3C[C@H]3[C@H]3[C@H]4[C@@H]([C@]5(CCC(=O)C=C5[C@@H]5C[C@@H]54)C)CC[C@@]31C)CC(=O)O2 JLQFVGYYVXALAG-CFEVTAHFSA-N 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/4007—Curing agents not provided for by the groups C08G59/42 - C08G59/66
- C08G59/4014—Nitrogen containing compounds
- C08G59/4021—Ureas; Thioureas; Guanidines; Dicyandiamides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/15—Heterocyclic compounds having oxygen in the ring
- C08K5/151—Heterocyclic compounds having oxygen in the ring having one oxygen atom in the ring
- C08K5/1515—Three-membered rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/315—Compounds containing carbon-to-nitrogen triple bonds
- C08K5/3155—Dicyandiamide
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/34—Heterocyclic compounds having nitrogen in the ring
- C08K5/3442—Heterocyclic compounds having nitrogen in the ring having two nitrogen atoms in the ring
- C08K5/3445—Five-membered rings
- C08K5/3447—Five-membered rings condensed with carbocyclic rings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Architecture (AREA)
- Optics & Photonics (AREA)
- Structural Engineering (AREA)
- Engineering & Computer Science (AREA)
- Materials For Photolithography (AREA)
- Optical Filters (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Epoxy Resins (AREA)
Abstract
(과제) 내열성이 낮은 기판을 사용한 경우이어도 현상 밀착성이나 직선성이 우수하고, 또한, 용제 내성이나 알칼리 내성 등이 우수한 수지막 패턴을 형성할 수 있는 감광성 수지 조성물을 제공하는 것.
(해결수단) 본 발명의 감광성 수지 조성물은 내열온도가 140℃ 이하인 기판 상에 경화막을 형성하기 위해서 사용되는 감광성 수지 조성물로서, (A)불포화기 함유 알칼리 가용성 수지와, (B)적어도 2개 이상의 에틸렌성 불포화 결합을 갖는 광중합성 모노머와, (C)에폭시기를 2개 이상 갖는 에폭시 화합물과, (D)디시안디아미드와, (E)광중합 개시제와, (F)용제를 포함한다. (C)성분과 (D)성분의 질량의 합계는 고형분의 전체 질량에 대해서 6∼24질량%이다.(Task) To provide a photosensitive resin composition capable of forming a resin film pattern having excellent development adhesion and linearity, and also excellent solvent resistance and alkali resistance, even when a substrate having low heat resistance is used.
(Solution) The photosensitive resin composition of the present invention is a photosensitive resin composition used for forming a cured film on a substrate having a heat-resistant temperature of 140°C or lower, comprising (A) an unsaturated group-containing alkali-soluble resin, (B) a photopolymerizable monomer having at least two or more ethylenically unsaturated bonds, (C) an epoxy compound having two or more epoxy groups, (D) dicyandiamide, (E) a photopolymerization initiator, and (F) a solvent. The total mass of the component (C) and the component (D) is 6 to 24 mass% with respect to the total mass of the solid content.
Description
본 발명은 감광성 수지 조성물, 감광성 수지 조성물을 경화해서 이루어지는 경화막, 경화막 부착 기판 및 경화막 부착 기판의 제조 방법에 관한 것이다.The present invention relates to a photosensitive resin composition, a cured film formed by curing the photosensitive resin composition, a substrate to which a cured film is attached, and a method for producing a substrate to which a cured film is attached.
최근, 디바이스의 플렉시블화나 원칩화를 목적으로 해서, 예를 들면, PET(폴리에틸렌테레프탈레이트)나 PEN(폴리에틸렌나프탈레이트) 등의 플라스틱 기판(플라스틱 필름, 수지제 필름)에 대해서 직접 경화막(투명 절연막 등) 패턴, 착색막 패턴, 및 차광막 패턴을 형성할 수 있는 것, 또한 유리 기판이나 실리콘 웨이퍼 상에 유기 EL이나 유기 박막 트랜지스터(TFT) 등을 구비한 유기 디바이스 부착 기판에 대해서 직접 경화막 패턴, 착색막 패턴, 차광막 패턴을 형성할 수 있는 것이 요구되고 있다.Recently, with the aim of making devices more flexible or more one-chip, for example, it has been demanded that a cured film (transparent insulating film, etc.) pattern, a colored film pattern, and a light-shielding film pattern can be formed directly on a plastic substrate (plastic film, resin film) such as PET (polyethylene terephthalate) or PEN (polyethylene naphthalate), and that a cured film pattern, a colored film pattern, and a light-shielding film pattern can be formed directly on an organic device attachment substrate equipped with an organic EL or an organic thin-film transistor (TFT), etc., on a glass substrate or silicon wafer.
그런데, 상기 플라스틱 기판, 및 유기 디바이스 부착 기판은 내열성이 140℃ 이하로 낮기 때문에, 종래의 감광성 수지 조성물을 이용하여 140℃ 이하라는 낮은 소성 온도에서 플라스틱 기판 또는 유기 디바이스 부착 기판에 직접 수지막 패턴, 착색막 패턴, 및 차광막 패턴을 형성하면, 형성한 패턴의 막강도가 불충분해지고, 후공정(현상 처리 등)에 있어서 도막의 막손실, 표면 거칠음, 패턴 박리 등의 불량이 발생하는 문제가 있다.However, since the plastic substrate and the organic device attachment substrate have low heat resistance of 140°C or less, if a conventional photosensitive resin composition is used to directly form a resin film pattern, a colored film pattern, and a light-shielding film pattern on the plastic substrate or the organic device attachment substrate at a low firing temperature of 140°C or less, there is a problem that the film strength of the formed pattern becomes insufficient, and defects such as film loss, surface roughness, and pattern peeling of the coating occur in the post-process (development, etc.).
그래서, 내열성이 낮은 기판에 사용할 수 있는 감광성 수지 조성물이 검토되고 있다. 예를 들면, 특허문헌 1에는 아크릴 공중합체의 알칼리 가용성 수지, 광중합 개시제 및 열중합 개시제를 함유하는 감방사선성 조성물이 개시되어 있다. 상기 감방사선성 조성물은 광중합 개시제 및 열중합 개시제를 포함함으로써 황변되지 않는 저온(100∼140℃)에서의 소성이어도 기판과의 충분한 밀착성을 갖는 컬러 필터를 형성할 수 있다고 되어 있다.Accordingly, a photosensitive resin composition that can be used on a substrate having low heat resistance is being studied. For example, Patent Document 1 discloses a radiation-sensitive composition containing an alkali-soluble resin of an acrylic copolymer, a photopolymerization initiator, and a thermal polymerization initiator. It is stated that the radiation-sensitive composition can form a color filter having sufficient adhesion to a substrate even when fired at a low temperature (100 to 140°C) without yellowing by including a photopolymerization initiator and a thermal polymerization initiator.
그러나, 본 발명자들의 지견에 의하면, 특허문헌 1에 기재된 감방사선성 조성물은 기판과의 밀착성은 있지만, 소망하는 현상 특성(예를 들면 패턴 선폭, 패턴 직선성), 내용제성이 얻어지지 않았다.However, according to the inventors' observation, the radiation-sensitive composition described in Patent Document 1 has adhesion to a substrate, but does not obtain the desired development characteristics (e.g., pattern line width, pattern linearity) and solvent resistance.
본 발명은 이러한 점을 감안하여 이루어진 것이며, 내열성이 낮은 기판을 사용한 경우이어도 현상 밀착성이나 직선성이 우수하고, 또한, 용제 내성이나 알칼리 내성 등이 우수한 수지막 패턴을 형성할 수 있는 감광성 수지 조성물, 감광성 수지 조성물을 경화해서 이루어지는 경화막, 경화막 부착 기판, 및 경화막 부착 기판의 제조 방법을 제공하는 것을 목적으로 한다.The present invention has been made in consideration of these points, and has as its object the provision of a photosensitive resin composition which can form a resin film pattern having excellent development adhesion and linearity, and also excellent solvent resistance and alkali resistance, even when a substrate having low heat resistance is used, a cured film formed by curing the photosensitive resin composition, a substrate to which a cured film is attached, and a method for producing a substrate to which a cured film is attached.
본 발명의 감광성 수지 조성물은 내열온도가 140℃ 이하인 기판 상에 경화막을 형성하기 위해서 사용되는 감광성 수지 조성물로서, (A)불포화기 함유 알칼리 가용성 수지와, (B)적어도 2개 이상의 에틸렌성 불포화 결합을 갖는 광중합성 모노머와, (C)에폭시기를 2개 이상 갖는 에폭시 화합물과, (D)디시안디아미드와, (E)광중합 개시제와, (F)용제를 포함하고, (C)성분과 (D)성분의 질량의 합계는 고형분의 전체 질량에 대해서 6∼24질량%이다.The photosensitive resin composition of the present invention is a photosensitive resin composition used for forming a cured film on a substrate having a heat-resistant temperature of 140°C or lower, comprising (A) an unsaturated group-containing alkali-soluble resin, (B) a photopolymerizable monomer having at least two or more ethylenically unsaturated bonds, (C) an epoxy compound having two or more epoxy groups, (D) dicyandiamide, (E) a photopolymerization initiator, and (F) a solvent, wherein the total mass of the component (C) and the component (D) is 6 to 24 mass% with respect to the total mass of the solid content.
본 발명의 경화막은 상기 감광성 수지 조성물을 경화해서 이루어진다.The cured film of the present invention is formed by curing the photosensitive resin composition.
본 발명의 경화막 부착 기판은 상기 경화막을 갖는다.The cured film-attached substrate of the present invention has the cured film.
본 발명의 경화막 부착 기판의 제조 방법은 내열온도가 140℃ 이하인 기판 상에 경화막 패턴을 형성해서 경화막 부착 기판을 제조하는 방법으로서, 상기 감광성 수지 조성물을 기판 상에 도포하고, 포토마스크를 통해 노광하고, 현상에 의해 미노광부를 제거하고, 140℃ 이하에서 가열해서 경화막 패턴을 형성한다.The method for manufacturing a substrate having a cured film attached according to the present invention is a method for manufacturing a substrate having a cured film attached by forming a cured film pattern on a substrate having a heat-resistant temperature of 140°C or lower, wherein the photosensitive resin composition is applied onto a substrate, exposed through a photomask, unexposed portions are removed by development, and the cured film pattern is formed by heating at 140°C or lower.
본 발명에 의하면, 내열성이 낮은 기판을 사용한 경우이어도 현상 밀착성이나 직선성이 우수하고, 또한, 용제 내성이나 알칼리 내성 등이 우수한 수지막 패턴을 형성할 수 있는 감광성 수지 조성물, 감광성 수지 조성물을 경화해서 이루어지는 경화막, 경화막 부착 기판, 및 경화막 부착 기판의 제조 방법을 제공할 수 있다.According to the present invention, a photosensitive resin composition capable of forming a resin film pattern having excellent development adhesion and linearity, and also excellent solvent resistance and alkali resistance, even when a substrate having low heat resistance is used, a cured film formed by curing the photosensitive resin composition, a substrate to which a cured film is attached, and a method for producing a substrate to which a cured film is attached can be provided.
이하, 본 발명의 실시형태를 설명하지만, 본 발명은 이하의 실시형태에 한정되는 것은 아니다. 또, 본 발명에 있어서, 각 성분의 함유량에 대해서 소수 제1위가 0일 때는 소수점 이하의 표기를 생략하는 일이 있다.Hereinafter, embodiments of the present invention will be described, but the present invention is not limited to the embodiments below. In addition, in the present invention, when the first decimal place of the content of each component is 0, the notation after the decimal point may be omitted.
본 발명의 감광성 수지 조성물에 포함되는 (A)불포화기 함유 알칼리 가용성 수지에 대해서 설명한다.The alkali-soluble resin containing an unsaturated group (A) included in the photosensitive resin composition of the present invention is described.
본 발명의 일반식(1)로 나타내어지는 1분자내에 카르복시기 및 중합성 불포화기를 갖는 알칼리 가용성 수지(A)는 1분자내에 2개의 에폭시기를 갖는 에폭시 화합물(a-1)과 불포화기 함유 모노카르복실산의 반응물에 대해서 디카르복실산 또는 트리카르복실산 또는 이들의 산 1무수물(b), 및 테트라카르복실산 또는 그 산 2무수물(c)을 반응시킴으로써 얻어진다.An alkali-soluble resin (A) having a carboxyl group and a polymerizable unsaturated group in one molecule represented by the general formula (1) of the present invention is obtained by reacting a reaction product of an epoxy compound (a-1) having two epoxy groups in one molecule and a monocarboxylic acid containing an unsaturated group with a dicarboxylic acid or a tricarboxylic acid or an acid dianhydride thereof (b), and a tetracarboxylic acid or an acid dianhydride thereof (c).
(식(1) 중, R1, R2, R3 및 R4는 각각 독립적으로 수소원자, 탄소수 1∼5의 알킬기, 할로겐원자 또는 페닐기이며, R5는 수소원자 또는 메틸기이며, X는 -CO-, -SO2-, -C(CF3)2-, -Si(CH3)2-, -CH2-, -C(CH3)2-, -O-, 플루오렌-9,9-디일기 또는 직결합이며, Y는 4가의 카르복실산 잔기이며, Z는 각각 독립적으로 수소원자 또는 일반식(2)로 나타내어지는 치환기이다. 단, Z 중 1개 이상은 일반식(2)로 나타내어지는 치환기이며, n은 1∼20의 정수이다.)(In formula (1), R 1 , R 2 , R 3 and R 4 are each independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a halogen atom or a phenyl group, R 5 is a hydrogen atom or a methyl group, X is -CO-, -SO 2 -, -C(CF 3 ) 2 -, -Si(CH 3 ) 2 -, -CH 2 -, -C(CH 3 ) 2 -, -O-, a fluorene-9,9-diyl group or a direct bond, Y is a tetravalent carboxylic acid residue, and Z is each independently a hydrogen atom or a substituent represented by general formula (2). However, at least one of Z is a substituent represented by general formula (2), and n is an integer of 1 to 20.)
(식(2) 중, W는 2가 또는 3가의 카르복실산 잔기이며, m은 1 또는 2이다.)(In formula (2), W is a divalent or trivalent carboxylic acid residue, and m is 1 or 2.)
일반식(1)로 나타내어지는 1분자내에 카르복시기 및 중합성 불포화기를 갖는 알칼리 가용성 수지(이하, 단지, 「일반식(1)로 나타내어지는 알칼리 가용성 수지」라고도 한다)의 제조 방법에 대해서 상세하게 설명한다.A method for producing an alkali-soluble resin having a carboxyl group and a polymerizable unsaturated group in one molecule represented by general formula (1) (hereinafter, also referred to simply as “alkali-soluble resin represented by general formula (1)”) is described in detail.
우선, 일반식(4)로 나타내어지는 1분자내에 2개의 에폭시기를 갖는 에폭시 화합물(a-1)(이하, 단지 「에폭시 화합물(a-1)」이라고도 한다)에 불포화기 함유 모노카르복실산(예를 들면 (메타)아크릴산)을 반응시켜서 에폭시(메타)아크릴레이트를 얻는다.First, an epoxy compound (a-1) having two epoxy groups in one molecule represented by general formula (4) (hereinafter also referred to simply as “epoxy compound (a-1)”) is reacted with an unsaturated group-containing monocarboxylic acid (e.g., (meth)acrylic acid) to obtain an epoxy (meth)acrylate.
(식(4) 중, R1, R2, R3 및 R4는 각각 독립적으로 수소원자, 탄소수 1∼5의 알킬기, 할로겐원자 또는 페닐기이며, X는 -CO-, -SO2-, -C(CF3)2-, -Si(CH3)2-, -CH2-, -C(CH3)2-, -O-, 플루오렌-9,9-디일기 또는 직결합이다.)(In formula (4), R 1 , R 2 , R 3 and R 4 are each independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a halogen atom or a phenyl group, and X is -CO-, -SO 2 -, -C(CF 3 ) 2 -, -Si(CH 3 ) 2 -, -CH 2 -, -C(CH 3 ) 2 -, -O-, a fluorene-9,9-diyl group or a direct bond.)
에폭시 화합물(a-1)은 비스페놀류와 에피클로로히드린을 반응시켜서 2개의 글리시딜에테르기를 갖는 에폭시 화합물이다.Epoxy compound (a-1) is an epoxy compound having two glycidyl ether groups produced by reacting bisphenol and epichlorohydrin.
에폭시 화합물(a-1)의 원료로서 사용되는 비스페놀류의 예에는 비스(4-히드록시페닐)케톤, 비스(4-히드록시-3,5-디메틸페닐)케톤, 비스(4-히드록시-3,5-디클로로페닐)케톤, 비스(4-히드록시페닐)술폰, 비스(4-히드록시-3,5-디메틸페닐)술폰, 비스(4-히드록시-3,5-디클로로페닐)술폰, 비스(4-히드록시페닐)헥사플루오로프로판, 비스(4-히드록시-3,5-디메틸페닐)헥사플루오로프로판, 비스(4-히드록시-3,5-디클로로페닐)헥사플루오로프로판, 비스(4-히드록시페닐)디메틸실란, 비스(4-히드록시-3,5-디메틸페닐)디메틸실란, 비스(4-히드록시-3,5-디클로로페닐)디메틸실란, 비스(4-히드록시페닐)메탄, 비스(4-히드록시-3,5-디클로로페닐)메탄, 비스(4-히드록시-3,5-디브로모페닐)메탄, 2,2-비스(4-히드록시페닐)프로판, 2,2-비스(4-히드록시-3,5-디메틸페닐)프로판, 2,2-비스(4-히드록시-3,5-디클로로페닐)프로판, 2,2-비스(4-히드록시-3-메틸페닐)프로판, 2,2-비스(4-히드록시-3-클로로페닐)프로판, 비스(4-히드록시페닐)에테르, 비스(4-히드록시-3,5-디메틸페닐)에테르, 비스(4-히드록시-3,5-디클로로페닐)에테르, 9,9-비스(4-히드록시페닐)플루오렌, 9,9-비스(4-히드록시-3-메틸페닐)플루오렌, 9,9-비스(4-히드록시-3-클로로페닐)플루오렌, 9,9-비스(4-히드록시-3-브로모페닐)플루오렌, 9,9-비스(4-히드록시-3-플루오로페닐)플루오렌, 9,9-비스(4-히드록시-3-메톡시페닐)플루오렌, 9,9-비스(4-히드록시-3,5-디메틸페닐)플루오렌, 9,9-비스(4-히드록시-3,5-디클로로페닐)플루오렌, 9,9-비스(4-히드록시-3,5-디브로모페닐)플루오렌, 4,4'-비페놀, 3,3'-비페놀 등이 포함된다. 이들은 그 1종만을 단독으로 사용해도 좋고, 2종 이상을 병용해도 좋다.Examples of bisphenols used as raw materials for epoxy compounds (a-1) include bis(4-hydroxyphenyl)ketone, bis(4-hydroxy-3,5-dimethylphenyl)ketone, bis(4-hydroxy-3,5-dichlorophenyl)ketone, bis(4-hydroxyphenyl)sulfone, bis(4-hydroxy-3,5-dimethylphenyl)sulfone, bis(4-hydroxy-3,5-dichlorophenyl)sulfone, bis(4-hydroxyphenyl)hexafluoropropane, bis(4-hydroxy-3,5-dimethylphenyl)hexafluoropropane, bis(4-hydroxy-3,5-dichlorophenyl)hexafluoropropane, bis(4-hydroxyphenyl)dimethylsilane, bis(4-hydroxy-3,5-dimethylphenyl)dimethylsilane, Bis(4-hydroxy-3,5-dichlorophenyl)dimethylsilane, bis(4-hydroxyphenyl)methane, bis(4-hydroxy-3,5-dichlorophenyl)methane, bis(4-hydroxy-3,5-dibromophenyl)methane, 2,2-bis(4-hydroxyphenyl)propane, 2,2-bis(4-hydroxy-3,5-dimethylphenyl)propane, 2,2-bis(4-hydroxy-3,5-dichlorophenyl)propane, 2,2-bis(4-hydroxy-3-methylphenyl)propane, 2,2-bis(4-hydroxy-3-chlorophenyl)propane, bis(4-hydroxyphenyl)ether, bis(4-hydroxy-3,5-dimethylphenyl)ether, Bis(4-hydroxy-3,5-dichlorophenyl)ether, 9,9-bis(4-hydroxyphenyl)fluorene, 9,9-bis(4-hydroxy-3-methylphenyl)fluorene, 9,9-bis(4-hydroxy-3-chlorophenyl)fluorene, 9,9-bis(4-hydroxy-3-bromophenyl)fluorene, 9,9-bis(4-hydroxy-3-fluorophenyl)fluorene, 9,9-bis(4-hydroxy-3-methoxyphenyl)fluorene, 9,9-bis(4-hydroxy-3,5-dimethylphenyl)fluorene, 9,9-bis(4-hydroxy-3,5-dichlorophenyl)fluorene, 9,9-bis(4-hydroxy-3,5-dibromophenyl)fluorene, These include 4,4'-biphenol, 3,3'-biphenol, etc. These can be used alone, or two or more types can be used together.
상기 불포화기 함유 모노카르복실산 화합물의 예에는 아크릴산, 메타크릴산 이외에, 아크릴산이나 메타크릴산에 무수 숙신산, 무수 말레산, 무수 프탈산 등의 산 1무수물을 반응시킨 화합물 등이 포함된다.Examples of the above unsaturated group-containing monocarboxylic acid compound include, in addition to acrylic acid and methacrylic acid, compounds produced by reacting acrylic acid or methacrylic acid with an acid 1-anhydride such as succinic anhydride, maleic anhydride, or phthalic anhydride.
상기 에폭시 화합물(a-1)과 (메타)아크릴산의 반응은 공지의 방법을 사용할 수 있다. 예를 들면, 일본 특허공개 평 4-355450호 공보에는 2개의 에폭시기를 갖는 에폭시 화합물 1몰에 대해서 약 2몰의 (메타)아크릴산을 사용함으로써, 중합성 불포화기를 함유하는 디올 화합물이 얻어지는 것이 기재되어 있다. 본 발명에 있어서, 상기 반응에서 얻어지는 화합물은 중합성 불포화기를 함유하는 디올 화합물이며, 일반식(5)로 나타내어지는 중합성 불포화기를 함유하는 디올(d)(이하, 단지 「일반식(5)로 나타내어지는 디올(d)」이라고도 한다)이다.The reaction of the above epoxy compound (a-1) and (meth)acrylic acid can be carried out using a known method. For example, Japanese Patent Application Laid-Open No. 4-355450 discloses that by using about 2 mol of (meth)acrylic acid for 1 mol of an epoxy compound having two epoxy groups, a diol compound containing a polymerizable unsaturated group is obtained. In the present invention, the compound obtained by the above reaction is a diol compound containing a polymerizable unsaturated group, and is a diol (d) containing a polymerizable unsaturated group represented by the general formula (5) (hereinafter also referred to simply as "diol (d) represented by the general formula (5)").
(식(5) 중, R1, R2, R3 및 R4는 각각 독립적으로 수소원자, 탄소수 1∼5의 알킬기, 할로겐원자 또는 페닐기이며, R5는 수소원자 또는 메틸기이며, X는 -CO-, -SO2-, -C(CF3)2-, -Si(CH3)2-, -CH2-, -C(CH3)2-, -O-, 플루오렌-9,9-디일기 또는 직결합이다.)(In formula (5), R 1 , R 2 , R 3 and R 4 are each independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a halogen atom or a phenyl group, R 5 is a hydrogen atom or a methyl group, and X is -CO-, -SO 2 -, -C(CF 3 ) 2 -, -Si(CH 3 ) 2 -, -CH 2 -, -C(CH 3 ) 2 -, -O-, a fluorene-9,9-diyl group or a direct bond.)
일반식(5)로 나타내어지는 디올(d)의 합성, 및 그것에 계속되는 다가 카르복실산 또는 그 무수물의 부가반응, 또한 카르복시기와의 반응성을 갖는 중합성 불포화기를 갖는 단관능 에폭시 화합물 등을 반응시키고, 일반식(1)로 나타내어지는 알칼리 가용성 수지의 제조에 있어서는 통상, 용매 중에서 필요에 따라 촉매를 이용하여 반응을 행한다.In the synthesis of diol (d) represented by general formula (5), and subsequent addition reaction of a polycarboxylic acid or anhydride thereof, and further reaction of a monofunctional epoxy compound having a polymerizable unsaturated group reactive with a carboxyl group, and the production of an alkali-soluble resin represented by general formula (1), the reaction is usually carried out in a solvent using a catalyst as necessary.
용매의 예에는 에틸셀로솔브아세테이트, 부틸셀로솔브아세테이트 등의 셀로솔브계 용매; 디글라임, 에틸카르비톨아세테이트, 부틸카르비톨아세테이트, 프로필렌글리콜모노메틸에테르아세테이트 등의 고비점의 에테르계 또는 에스테르계의 용매; 시클로헥사논, 디이소부틸케톤 등의 케톤계 용매 등이 포함된다. 또, 사용하는 용매, 촉매 등의 반응 조건에 관해서는 특별히 제한되지 않지만, 예를 들면 수산기를 갖지 않고, 반응온도보다 높은 비점을 갖는 용매를 반응 용매로서 사용하는 것이 바람직하다.Examples of the solvent include cellosolve solvents such as ethyl cellosolve acetate and butyl cellosolve acetate; high-boiling-point ether or ester solvents such as diglyme, ethyl carbitol acetate, butyl carbitol acetate and propylene glycol monomethyl ether acetate; ketone solvents such as cyclohexanone and diisobutyl ketone, etc. In addition, there are no particular restrictions on the reaction conditions such as the solvent and catalyst used, but, for example, it is preferable to use a solvent that does not have a hydroxyl group and has a boiling point higher than the reaction temperature as the reaction solvent.
또한 카르복시기와 에폭시기의 반응에 있어서는 촉매를 사용하는 것이 바람직하고, 일본 특허공개 평 9-325494호 공보에는 테트라에틸암모늄브로마이드, 트리에틸벤질암모늄클로라이드 등의 암모늄염, 트리페닐포스핀, 트리스(2,6-디메톡시페닐)포스핀 등의 포스핀류 등이 기재되어 있다.In addition, it is preferable to use a catalyst for the reaction between a carboxyl group and an epoxy group, and Japanese Patent Application Laid-Open No. 9-325494 discloses ammonium salts such as tetraethylammonium bromide and triethylbenzylammonium chloride, and phosphines such as triphenylphosphine and tris(2,6-dimethoxyphenyl)phosphine.
다음에 에폭시 화합물(a-1)과 (메타)아크릴산의 반응에서 얻어지는 일반식(5)로 나타내어지는 디올(d)과, 디카르복실산 또는 트리카르복실산 또는 그 산 1무수물(b), 및 테트라카르복실산 또는 그 산 2무수물(c)을 반응시켜서 일반식(1)로 나타내어지는 알칼리 가용성 수지를 얻을 수 있다.Next, by reacting a diol (d) represented by general formula (5) obtained by the reaction of an epoxy compound (a-1) and (meth)acrylic acid, with a dicarboxylic acid or a tricarboxylic acid or an acid dianhydride thereof (b), and a tetracarboxylic acid or an acid dianhydride thereof (c), an alkali-soluble resin represented by general formula (1) can be obtained.
(식(1) 중, R1, R2, R3 및 R4는 각각 독립적으로 수소원자, 탄소수 1∼5의 알킬기, 할로겐원자 또는 페닐기이며, R5는 수소원자 또는 메틸기이며, X는 -CO-, -SO2-, -C(CF3)2-, -Si(CH3)2-, -CH2-, -C(CH3)2-, -O-, 플루오렌-9,9-디일기 또는 직결합이며, Y는 4가의 카르복실산 잔기이며, Z는 각각 독립적으로 수소원자 또는 일반식(2)로 나타내어지는 치환기이다. 단, Z 중 1개 이상은 일반식(2)로 나타내어지는 치환기이며, n은 1∼20의 정수이다.)(In formula (1), R 1 , R 2 , R 3 and R 4 are each independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a halogen atom or a phenyl group, R 5 is a hydrogen atom or a methyl group, X is -CO-, -SO 2 -, -C(CF 3 ) 2 -, -Si(CH 3 ) 2 -, -CH 2 -, -C(CH 3 ) 2 -, -O-, a fluorene-9,9-diyl group or a direct bond, Y is a tetravalent carboxylic acid residue, and Z is each independently a hydrogen atom or a substituent represented by general formula (2). However, at least one of Z is a substituent represented by general formula (2), and n is an integer of 1 to 20.)
(식(2) 중, W는 2가 또는 3가의 카르복실산 잔기이며, m은 1 또는 2이다.)(In formula (2), W is a divalent or trivalent carboxylic acid residue, and m is 1 or 2.)
일반식(1)로 나타내어지는 알칼리 가용성 수지를 합성하기 위해서 사용되는 산성분은 일반식(5)로 나타내어지는 디올(d) 분자 중의 수산기와 반응할 수 있는 다가의 산성분이며, 디카르복실산 또는 트리카르복실산 또는 이들의 산 1무수물(b)과 테트라카르복실산 또는 그 산 2무수물(c)을 병용하는 것이 필요하다. 상기 산성분의 카르복실산 잔기는 포화 탄화수소기 또는 불포화 탄화수소기 어느 것이라도 좋다. 또한 이들 카르복실산 잔기에는 -O-, -S-, 카르보닐기 등의 헤테로 원소를 포함하는 결합을 포함하고 있어도 좋다.The acid component used to synthesize the alkali-soluble resin represented by the general formula (1) is a polyvalent acid component capable of reacting with a hydroxyl group in a diol (d) molecule represented by the general formula (5), and it is necessary to use a dicarboxylic acid or a tricarboxylic acid or an acid dianhydride thereof (b) in combination with a tetracarboxylic acid or an acid dianhydride thereof (c). The carboxylic acid residue of the acid component may be either a saturated hydrocarbon group or an unsaturated hydrocarbon group. Furthermore, these carboxylic acid residues may include a bond containing a heteroatom such as -O-, -S-, or a carbonyl group.
디카르복실산 또는 트리카르복실산 또는 이들의 산 1무수물(b)로서는 쇄식 탄화수소 디카르복실산 또는 트리카르복실산, 지환식 탄화수소 디카르복실산 또는 트리카르복실산, 방향족 탄화수소 디카르복실산 또는 트리카르복실산, 또는 이들의 산 1무수물 등을 사용할 수 있다.As the dicarboxylic acid or tricarboxylic acid or the acid anhydride thereof (b), a chain hydrocarbon dicarboxylic acid or tricarboxylic acid, an alicyclic hydrocarbon dicarboxylic acid or tricarboxylic acid, an aromatic hydrocarbon dicarboxylic acid or tricarboxylic acid, or the acid anhydride thereof can be used.
쇄식 탄화수소 디카르복실산 또는 트리카르복실산의 산 1무수물의 예에는 숙신산, 아세틸숙신산, 말레산, 아디프산, 이타콘산, 아젤라산, 시트라말산, 말론산, 글루타르산, 시트르산, 주석산, 옥소글루타르산, 피멜산, 세바신산, 수베르산, 디글리콜산 등의 산 1무수물, 및 임의의 치환기가 도입된 디카르복실산 또는 트리카르복실산의 산 1무수물등이 포함된다. 또한 지환식 디카르복실산 또는 트리카르복실산의 산 1무수물의 예에는 시클로부탄디카르복실산, 시클로펜탄디카르복실산, 헥사히드로프탈산, 테트라히드로프탈산, 노르보르난디카르복실산 등의 산 1무수물, 및 임의의 치환기가 도입된 디카르복실산 또는 트리카르복실산의 산 1무수물 등이 포함된다. 또한 방향족 디카르복실산 또는 트리카르복실산의 산 1무수물의 예에는 프탈산, 이소프탈산, 트리멜리트산 등의 산 1무수물, 및 임의의 치환기가 도입된 디카르복실산 또는 트리카르복실산의 산 1무수물이 포함된다.Examples of acid anhydrides of chain hydrocarbon dicarboxylic acids or tricarboxylic acids include acid anhydrides such as succinic acid, acetylsuccinic acid, maleic acid, adipic acid, itaconic acid, azelaic acid, citramalic acid, malonic acid, glutaric acid, citric acid, tartaric acid, oxoglutaric acid, pimelic acid, sebacic acid, suberic acid, and diglycolic acid, and acid anhydrides of dicarboxylic acids or tricarboxylic acids having an optional substituent introduced therein. In addition, examples of acid anhydrides of alicyclic dicarboxylic acids or tricarboxylic acids include acid anhydrides such as cyclobutanedicarboxylic acid, cyclopentanedicarboxylic acid, hexahydrophthalic acid, tetrahydrophthalic acid, and norbornanedicarboxylic acid, and acid anhydrides of dicarboxylic acids or tricarboxylic acids having an optional substituent introduced therein. Also, examples of acid anhydrides of aromatic dicarboxylic acids or tricarboxylic acids include acid anhydrides such as phthalic acid, isophthalic acid, trimellitic acid, and the like, and acid anhydrides of dicarboxylic acids or tricarboxylic acids to which an optional substituent has been introduced.
디카르복실산 또는 트리카르복실산의 산 1무수물 중에서는 숙신산, 이타콘산, 테트라히드로프탈산, 헥사히드로트리멜리트산, 프탈산, 트리멜리트산이 바람직하고, 숙신산, 이타콘산, 테트라히드로프탈산인 것이 보다 바람직하다. 또한 디카르복실산 또는 트리카르복실산에 있어서는 이들 산 1무수물을 사용하는 것이 바람직하다. 상술한 디카르복실산 또는 트리카르복실산의 산 1무수물은 그 1종만을 단독으로 사용해도 좋고, 2종 이상을 병용해도 좋다.Among the acid anhydrides of dicarboxylic acids or tricarboxylic acids, succinic acid, itaconic acid, tetrahydrophthalic acid, hexahydrotrimellitic acid, phthalic acid, and trimellitic acid are preferable, and succinic acid, itaconic acid, and tetrahydrophthalic acid are more preferable. In addition, for dicarboxylic acids or tricarboxylic acids, it is preferable to use these acid anhydrides. The acid anhydrides of the above-mentioned dicarboxylic acids or tricarboxylic acids may be used alone, or two or more may be used in combination.
또한 테트라카르복실산 또는 그 산 2무수물(c)로서는 쇄식 탄화수소 테트라카르복실산, 지환식 탄화수소 테트라카르복실산, 방향족 탄화수소 테트라카르복실산, 또는 이들의 산 2무수물 등을 사용할 수 있다.In addition, as the tetracarboxylic acid or its acid dianhydride (c), chain hydrocarbon tetracarboxylic acid, alicyclic hydrocarbon tetracarboxylic acid, aromatic hydrocarbon tetracarboxylic acid, or their acid dianhydrides can be used.
쇄식 탄화수소 테트라카르복실산의 예에는 부탄테트라카르복실산, 펜탄테트라카르복실산, 헥산테트라카르복실산, 및 지환식 탄화수소기, 불포화 탄화수소기 등의 치환기가 도입된 쇄식 탄화수소 테트라카르복실산 등이 포함된다. 또한 상기 지환식 테트라카르복실산의 예에는 시클로부탄테트라카르복실산, 시클로펜탄테트라카르복실산, 시클로헥산테트라카르복실산, 시클로헵탄테트라카르복실산, 노르보르난테트라카르복실산, 및 쇄식 탄화수소기, 불포화 탄화수소기 등의 치환기가 도입된 지환식 테트라카르복실산 등이 포함된다. 또한 방향족 테트라카르복실산의 예에는 피로멜리트산, 벤조페논테트라카르복실산, 비페닐테트라카르복실산, 디페닐에테르테트라카르복실산, 디페닐술폰테트라카르복실산 등이 포함된다.Examples of chain hydrocarbon tetracarboxylic acids include butanetetracarboxylic acid, pentanetetracarboxylic acid, hexanetetracarboxylic acid, and chain hydrocarbon tetracarboxylic acids having a substituent such as an alicyclic hydrocarbon group or an unsaturated hydrocarbon group introduced therein. In addition, examples of the alicyclic tetracarboxylic acids include cyclobutanetetracarboxylic acid, cyclopentanetetracarboxylic acid, cyclohexanetetracarboxylic acid, cycloheptanetetracarboxylic acid, norbornanetetracarboxylic acid, and alicyclic tetracarboxylic acids having a substituent such as a chain hydrocarbon group or an unsaturated hydrocarbon group introduced therein. In addition, examples of aromatic tetracarboxylic acids include pyromellitic acid, benzophenonetetracarboxylic acid, biphenyltetracarboxylic acid, diphenylethertetracarboxylic acid, diphenylsulfonetetracarboxylic acid, and the like.
테트라카르복실산 또는 그 산 2무수물 중에서는 비페닐테트라카르복실산, 벤조페논테트라카르복실산, 디페닐에테르테트라카르복실산인 것이 바람직하고, 비페닐테트라카르복실산, 디페닐에테르테트라카르복실산인 것이 보다 바람직하다. 또한 테트라카르복실산 또는 그 산 2무수물에 있어서는 그 산 2무수물을 사용하는 것이 바람직하다. 또, 상술한 테트라카르복실산 또는 그 산 2무수물은 그 1종만을 단독으로 사용해도 좋고, 2종 이상을 병용해도 좋다.Among tetracarboxylic acids or their dianhydrides, biphenyltetracarboxylic acid, benzophenonetetracarboxylic acid, and diphenylethertetracarboxylic acid are preferable, and biphenyltetracarboxylic acid and diphenylethertetracarboxylic acid are more preferable. In addition, among tetracarboxylic acids or their dianhydrides, it is preferable to use the acid dianhydride. In addition, the above-mentioned tetracarboxylic acids or their dianhydrides may be used alone, or two or more may be used in combination.
일반식(5)로 나타내어지는 디올(d)과 산성분(b) 및 (c)의 반응에 대해서는 특별히 한정되는 것은 아니고, 공지의 방법을 채용할 수 있다. 예를 들면, 일본 특허공개 평 9-325494호 공보에는 반응온도가 90∼140℃에서 에폭시(메타)아크릴레이트와 테트라카르복실산 2무수물을 반응시키는 방법이 기재되어 있다.There is no particular limitation on the reaction of the diol (d) represented by the general formula (5) and the acid components (b) and (c), and a known method can be adopted. For example, Japanese Patent Application Laid-Open No. 9-325494 discloses a method of reacting epoxy (meth)acrylate and tetracarboxylic dianhydride at a reaction temperature of 90 to 140°C.
여기에서, 화합물의 말단이 카르복시기가 되도록 일반식(5)로 나타내어지는 디올(d), 디카르복실산 또는 트리카르복실산 또는 이들의 산 1무수물(b), 테트라카르복실산 또는 그 산 2무수물(c)의 몰비가 (d):(b):(c)=1:0.01∼1.0:0.2∼1.0이 되도록 반응시키는 것이 바람직하다.Here, it is preferable to react the diol (d), dicarboxylic acid or tricarboxylic acid or their acid dianhydride (b), and tetracarboxylic acid or their acid dianhydride (c) represented by general formula (5) so that the terminal of the compound becomes a carboxyl group in a molar ratio of (d):(b):(c) = 1:0.01∼1.0:0.2∼1.0.
예를 들면, 디카르복실산 또는 트리카르복실산 또는 이들의 산 1무수물(b), 테트라카르복실산 또는 그 산 2무수물(c)을 사용하는 경우에는 일반식(5)로 나타내어지는 디올(d)에 대한 산성분의 양〔(b)/2+(c)〕의 몰비[(d)/〔(b)/2+(c)〕]가 0.5∼1.0이 되도록 반응시키는 것이 바람직하다. 여기에서, 몰비가 1.0 이하인 경우에는 미반응의 중합성 불포화기를 함유하는 디올의 함유량을 증대시키는 일이 없으므로 알칼리 가용성 수지 조성물의 경시 안정성을 높일 수 있다. 한편, 몰비가 0.5를 초과하는 경우에는 일반식(1)로 나타내어지는 알칼리 가용성 수지의 말단이 산 무수물로 되지 않으므로, 미반응의 산 2무수물의 함유량이 증대하는 것을 억제할 수 있는 점에서 알칼리 가용성 수지 조성물의 경시 안정성을 높일 수 있다. 또, 일반식(1)로 나타내어지는 알칼리 가용성 수지의 산가, 분자량을 조정할 목적으로 (d), (b) 및 (c)의 각 성분의 몰비는 상술의 범위에서 임의로 변경할 수 있다.For example, when using dicarboxylic acid or tricarboxylic acid or anhydride thereof (b), tetracarboxylic acid or anhydride thereof (c), it is preferable to react so that the molar ratio [(d)/〔(b)/2+(c)〕] of the amount of the acid component to the diol (d) represented by the general formula (5) is 0.5 to 1.0. Here, when the molar ratio is 1.0 or less, the content of the diol containing an unreacted polymerizable unsaturated group does not increase, so the stability over time of the alkali-soluble resin composition can be improved. On the other hand, when the molar ratio exceeds 0.5, the terminal of the alkali-soluble resin represented by the general formula (1) does not become an acid anhydride, so the content of the unreacted acid dianhydride can be suppressed from increasing, and therefore the stability over time of the alkali-soluble resin composition can be improved. In addition, for the purpose of adjusting the acid value and molecular weight of the alkali-soluble resin represented by general formula (1), the molar ratio of each component of (d), (b) and (c) can be arbitrarily changed within the above-described range.
또한 일반식(1)로 나타내어지는 알칼리 가용성 수지의 산가의 바람직한 범위는 20∼180mgKOH/g이며, 80mgKOH/g 이상 120mgKOH/g 이하인 것이 바람직하다. 산가가 20mgKOH/g 이상인 경우에는 알칼리 현상시에 잔사가 남기 어려워지고, 180mgKOH/g 이하인 경우에는 알칼리 현상액의 침투가 지나치게 빨라지므로, 박리현상을 억제할 수 있다. 또, 산가는 전위차 적정 장치 「COM-1600」(히라누마 산교 가부시키가이샤제)을 이용하여 1/10N-KOH 수용액으로 적정해서 구할 수 있다.In addition, the preferable range of the acid value of the alkali-soluble resin represented by general formula (1) is 20 to 180 mgKOH/g, and it is preferably 80 mgKOH/g or more and 120 mgKOH/g or less. When the acid value is 20 mgKOH/g or more, it is difficult for a residue to remain during alkaline development, and when it is 180 mgKOH/g or less, the penetration of the alkaline developer becomes too fast, so that the peeling phenomenon can be suppressed. In addition, the acid value can be obtained by titrating with a 1/10 N-KOH aqueous solution using a potentiometric titration device "COM-1600" (manufactured by Hiranuma Sangyo Co., Ltd.).
일반식(1)로 나타내어지는 알칼리 가용성 수지의 겔퍼미에이션 크로마토그래피(GPC) 측정(HLC-8220GPC, 토소 가부시키가이샤제)에 의한 폴리스티렌 환산의 중량 평균 분자량(Mw)은 통상 1000∼100000이며, 2000∼20000인 것이 바람직하고, 2000∼6000인 것이 보다 바람직하다. 중량 평균 분자량이 1000 이상인 경우에는 알칼리 현상시의 패턴의 밀착성의 저하를 억제할 수 있다. 또한 중량 평균 분자량이 100000 미만인 경우에는 도포에 적합한 감광성 수지 조성물의 용액 점도로 조정하기 쉽고, 알칼리 현상에 시간을 지나치게 필요로 하는 일이 없다.The weight average molecular weight (Mw) in polystyrene conversion by gel permeation chromatography (GPC) measurement (HLC-8220GPC, manufactured by Tosoh Corporation) of the alkali-soluble resin represented by general formula (1) is usually 1,000 to 100,000, preferably 2,000 to 20,000, and more preferably 2,000 to 6,000. When the weight average molecular weight is 1,000 or more, the decrease in the adhesion of the pattern during alkaline development can be suppressed. Furthermore, when the weight average molecular weight is less than 100,000, it is easy to adjust the solution viscosity of the photosensitive resin composition to be suitable for application, and alkaline development does not require excessive time.
다음에, 본 발명의 일반식(1)로 나타내어지는 알칼리 가용성 수지를 사용한 감광성 수지 조성물에 대해서 설명한다.Next, a photosensitive resin composition using an alkali-soluble resin represented by the general formula (1) of the present invention will be described.
여기에서, (A)성분의 질량은 착색재를 포함하지 않는 경우는 고형분의 전체 질량에 대해서 30∼80질량%인 것이 바람직하고, 착색재를 포함하는 경우에는 2∼70질량%인 것이 바람직하다.Here, the mass of component (A) is preferably 30 to 80 mass% with respect to the total mass of the solid content when no coloring agent is included, and is preferably 2 to 70 mass% when a coloring agent is included.
본 발명의 감광성 수지 조성물은 (B)적어도 2개의 에틸렌성 불포화 결합을 갖는 광중합성 모노머를 포함한다.The photosensitive resin composition of the present invention comprises (B) a photopolymerizable monomer having at least two ethylenically unsaturated bonds.
(B)성분은 경화막의 밀착성을 보다 높게 하고, 또한 노광부의 알칼리 현상액에 대한 용해성을 높게 해서 경화막의 직선 재현성을 보다 높게 한다. 단, 경화막을 무르게 하기 어렵게 하고, 또한, 조성물의 산가의 저하를 억제해서 알칼리 현상액에 대한 미노광부의 용해성을 높이고, 경화막의 직선 재현성을 보다 높게 하기 위해서는 (B)성분의 양은 지나치게 높지 않는 것이 바람직하다.(B) Component increases the adhesion of the cured film and also increases the solubility of the exposed area in an alkaline developer, thereby increasing the straight line reproducibility of the cured film. However, in order to make it difficult for the cured film to become soft, and also to suppress a decrease in the acid value of the composition, thereby increasing the solubility of the unexposed area in an alkaline developer, and thereby increasing the straight line reproducibility of the cured film, it is preferable that the amount of (B) component is not excessively high.
(B)성분의 함유량은 (A)성분 100질량부에 대해서 10∼60질량부인 것이 바람직하다.(B) The content of component is preferably 10 to 60 parts by mass per 100 parts by mass of component (A).
(B)적어도 2개의 에틸렌성 불포화 결합을 갖는 광중합성 모노머의 예에는 에틸렌글리콜디(메타)아크릴레이트, 디에틸렌글리콜디(메타)아크릴레이트, 트리에틸렌글리콜디(메타)아크릴레이트, 테트라에틸렌글리콜디(메타)아크릴레이트, 테트라메틸렌글리콜디(메타)아크릴레이트, 글리세롤디(메타)아크릴레이트, 트리메티롤프로판트리(메타)아크릴레이트, 트리메티롤에탄트리(메타)아크릴레이트, 펜타에리스리톨디(메타)아크릴레이트, 펜타에리스리톨트리(메타)아크릴레이트, 펜타에리스리톨테트라(메타)아크릴레이트, 디펜타에리스리톨테트라(메타)아크릴레이트, 글리세롤트리(메타)아크릴레이트, 소르비톨펜타(메타)아크릴레이트, 디펜타에리스리톨펜타(메타)아크릴레이트, 디펜타에리스리톨헥사(메타)아크릴레이트, 소르비톨헥사(메타)아크릴레이트, 포스파젠의 알킬렌옥사이드 변성 헥사(메타)아크릴레이트, 카프로락톤 변성 디펜타에리스리톨헥사(메타)아크릴레이트 등의 (메타)아크릴산 에스테르류, 에틸렌성 이중결합을 갖는 화합물로서 (메타)아크릴기를 갖는 수지상 폴리머 등이 포함된다. 또, 이들은 그 1종만을 단독으로 사용해도 좋고, 2종 이상을 병용해도 좋다.(B) Examples of photopolymerizable monomers having at least two ethylenically unsaturated bonds include ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, tetramethylene glycol di(meth)acrylate, glycerol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, trimethylolethane tri(meth)acrylate, pentaerythritol di(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol tetra(meth)acrylate, glycerol tri(meth)acrylate, sorbitol penta(meth)acrylate, (Meth)acrylic acid esters such as dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, sorbitol hexa(meth)acrylate, alkylene oxide-modified hexa(meth)acrylate of phosphazene, caprolactone-modified dipentaerythritol hexa(meth)acrylate, and the like; resinous polymers having a (meth)acryl group as a compound having an ethylenic double bond; In addition, these may be used alone or in combination of two or more.
상기 에틸렌성 이중결합을 갖는 화합물로서의 (메타)아크릴기를 갖는 수지상 폴리머의 예에는 다관능 (메타)아크릴레이트의 (메타)아크릴레이트기 중의 탄소-탄소 이중결합의 일부에 다가 메르캅토 화합물을 부가해서 얻어지는 수지상 폴리머가 포함된다. 구체적으로는 일반식(6)으로 나타내어지는 다관능 (메타)아크릴레이트의 (메타)아크릴로일기와 일반식(7)로 나타내어지는 다가 메르캅토 화합물을 반응시켜서 얻어지는 수지상 폴리머가 있다.Examples of the resinous polymer having a (meth)acrylic group as a compound having the above-mentioned ethylenic double bond include a resinous polymer obtained by adding a polyvalent mercapto compound to some of the carbon-carbon double bonds in the (meth)acrylate group of a polyfunctional (meth)acrylate. Specifically, there is a resinous polymer obtained by reacting a (meth)acryloyl group of a polyfunctional (meth)acrylate represented by general formula (6) with a polyvalent mercapto compound represented by general formula (7).
(식(6) 중, R9는 수소원자 또는 메틸기이며, R10은 R11(OH)k의 k개의 히드록실기 중 l개의 히드록실기를 식 중의 에스테르 결합에 공여한 나머지 부분이다. 바람직한 R11(OH)k로서는 탄소수 2∼8의 비방향족의 직쇄 또는 분지쇄의 탄화수소 골격에 의거한 다가 알콜이거나, 상기 다가 알콜의 복수 분자가 알콜의 탈수 축합에 의해 에테르 결합을 통해 연결되어 이루어지는 다가 알콜에테르이거나, 또는 이들의 다가 알콜 또는 다가 알콜에테르와 히드록시산의 에스테르이다. k 및 l은 독립적으로 2∼20의 정수이며, k≥l이다.)(In formula (6), R 9 is a hydrogen atom or a methyl group, and R 10 is the remainder of the k hydroxyl groups of R 11 (OH) k donated to the ester bond in the formula. Preferred R 11 (OH) k is a polyhydric alcohol based on a non-aromatic straight-chain or branched-chain hydrocarbon skeleton having 2 to 8 carbon atoms, a polyhydric alcohol ether formed by connecting multiple molecules of the polyhydric alcohol via an ether bond by dehydration condensation of the alcohol, or an ester of these polyhydric alcohols or polyhydric alcohol ethers and a hydroxy acid. k and l are independently integers of 2 to 20, and k ≥ l.)
(식(7) 중, R12는 단결합 또는 2∼6가의 C1∼C6의 탄화수소기이며, p는 R12가 단결합일 때는 2이며, R12가 2∼6가의 기일 때는 2∼6의 정수이다.)(In formula (7), R 12 is a single bond or a C1 to C6 hydrocarbon group having a valence of 2 to 6, and p is 2 when R 12 is a single bond, and is an integer from 2 to 6 when R 12 is a group having a valence of 2 to 6.)
일반식(6)으로 나타내어지는 다관능 (메타)아크릴레이트의 예에는 에틸렌글리콜디(메타)아크릴레이트, 디에틸렌글리콜디(메타)아크릴레이트, 트리에틸렌글리콜디(메타)아크릴레이트, 테트라에틸렌글리콜디(메타)아크릴레이트, 테트라메틸렌글리콜디(메타)아크릴레이트, 트리메티롤프로판트리(메타)아크릴레이트, 에틸렌옥사이드 변성 트리메티롤프로판트리(메타)아크릴레이트, 프로필렌옥사이드 변성 트리메티롤프로판트리(메타)아크릴레이트, 트리메티롤에탄트리(메타)아크릴레이트, 펜타에리스리톨디(메타)아크릴레이트, 펜타에리스리톨트리(메타)아크릴레이트, 펜타에리스리톨테트라(메타)아크릴레이트, 디펜타에리스리톨펜타(메타)아크릴레이트, 디펜타에리스리톨헥사(메타)아크릴레이트, 트리펜타에리스리톨옥타(메타)아크릴레이트, 트리펜타에리스리톨헵타(메타)아크릴레이트, 카프로락톤 변성 펜타에리스리톨트리(메타)아크릴레이트, 카프로락톤 변성 펜타에리스리톨테트라(메타)아크릴레이트, 카프로락톤 변성 디펜타에리스리톨헥사(메타)아크릴레이트, 에피클로로히드린 변성 헥사히드로프탈산 디(메타)아크릴레이트, 히드록시피바린산 네오펜틸글리콜디(메타)아크릴레이트, 네오펜틸글리콜디(메타)아크릴레이트, 에틸렌옥사이드 변성 네오펜틸글리콜디(메타)아크릴레이트, 프로필렌옥사이드 변성 네오펜틸글리콜디(메타)아크릴레이트, 에틸렌옥사이드 변성 트리메티롤프로판트리(메타)아크릴레이트, 프로필렌옥사이드 변성 트리메티롤프로판트리(메타)아크릴레이트, 트리메티롤프로판벤조에이트(메타)아크릴레이트, 트리스((메타)아크릴옥시에틸)이소시아누레이트, 알콕시 변성 트리메티롤프로판트리(메타)아크릴레이트, 디펜타에리스리톨 폴리(메타)아크릴레이트, 알킬 변성 디펜타에리스리톨트리(메타)아크릴레이트, 디트리메티롤프로판테트라(메타)아크릴레이트 등의 (메타)아크릴산 에스테르가 포함된다. 이들 화합물은 그 1종만을 단독으로 사용해도 좋고, 2종 이상을 병용해도 좋다.Examples of the polyfunctional (meth)acrylate represented by the general formula (6) include ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, tetramethylene glycol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, ethylene oxide-modified trimethylolpropane tri(meth)acrylate, propylene oxide-modified trimethylolpropane tri(meth)acrylate, trimethylolethane tri(meth)acrylate, pentaerythritol di(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, Dipentaerythritol hexa(meth)acrylate, tripentaerythritol octa(meth)acrylate, tripentaerythritol hepta(meth)acrylate, caprolactone-modified pentaerythritol tri(meth)acrylate, caprolactone-modified pentaerythritol tetra(meth)acrylate, caprolactone-modified dipentaerythritol hexa(meth)acrylate, epichlorohydrin-modified hexahydrophthalic acid di(meth)acrylate, hydroxypivalic acid neopentyl glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, ethylene oxide-modified neopentyl glycol di(meth)acrylate, propylene oxide-modified neopentyl glycol di(meth)acrylate, ethylene oxide-modified (Meth)acrylic acid esters such as trimethylolpropane tri(meth)acrylate, propylene oxide-modified trimethylolpropane tri(meth)acrylate, trimethylolpropane benzoate (meth)acrylate, tris((meth)acryloxyethyl)isocyanurate, alkoxy-modified trimethylolpropane tri(meth)acrylate, dipentaerythritol poly(meth)acrylate, alkyl-modified dipentaerythritol tri(meth)acrylate, and ditrimethylolpropane tetra(meth)acrylate are included. These compounds may be used alone, or two or more types may be used in combination.
일반식(7)로 나타내어지는 다가 메르캅토 화합물의 예에는 1,2-디메르캅토에탄, 1,3-디메르캅토프로판, 1,4-디메르캅토부탄, 비스디메르캅토에탄티올, 트리메티롤프로판트리(메르캅토아세테이트), 트리메티롤프로판트리(메르캅토프로피오네이트), 펜타에리스리톨테트라(메르캅토아세테이트), 펜타에리스리톨트리(메르캅토아세테이트), 펜타에리스리톨테트라(메르캅토프로피오네이트), 디펜타에리스리톨헥사(메르캅토아세테이트), 디펜타에리스리톨헥사(메르캅토프로피오네이트) 등이 포함된다. 이들 화합물은 그 1종만을 단독으로 사용해도 좋고, 2종 이상을 병용해도 좋다.Examples of polyhydric mercapto compounds represented by general formula (7) include 1,2-dimercaptoethane, 1,3-dimercaptopropane, 1,4-dimercaptobutane, bisdimercaptoethanethiol, trimethylolpropane tri(mercaptoacetate), trimethylolpropane tri(mercaptopropionate), pentaerythritol tetra(mercaptoacetate), pentaerythritol tri(mercaptoacetate), pentaerythritol tetra(mercaptopropionate), dipentaerythritol hexa(mercaptoacetate), dipentaerythritol hexa(mercaptopropionate), etc. These compounds may be used alone, or two or more may be used in combination.
또한 상기 수지상 폴리머의 합성에 있어서는 필요에 따라 중합 방지제를 추가해도 좋다. 중합 방지제의 예에는 히드로퀴논계 화합물, 페놀계 화합물이 포함된다. 이들의 구체예에는 히드로퀴논, 메톡시히드로퀴논, 카테콜, p-tert-부틸카테콜, 크레졸, 디부틸히드록시톨루엔, 2,4,6-트리-tert-부틸페놀(BHT) 등이 포함된다.In addition, in the synthesis of the above resinous polymer, a polymerization inhibitor may be added as needed. Examples of the polymerization inhibitor include hydroquinone-based compounds and phenol-based compounds. Specific examples thereof include hydroquinone, methoxyhydroquinone, catechol, p-tert-butylcatechol, cresol, dibutylhydroxytoluene, 2,4,6-tri-tert-butylphenol (BHT), and the like.
(A)성분과 (B)성분의 배합 비율은 중량비 (A)/(B)로 30/70∼90/10인 것이 바람직하고, 60/40∼80/20인 것이 보다 바람직하다. (A)성분의 배합 비율이 30/70 이상이면 광경화 후의 경화막이 물러지기 어렵고, 또한 미노광부에 있어서 도막의 산가가 낮아지기 어렵기 때문에 알칼리 현상액에 대한 용해성의 저하를 억제할 수 있다. 따라서, 패턴 에지가 거칠은 것이나, 샤프하게 되지 않는다는 문제가 발생하기 어렵다. 또한 (A)성분의 배합 비율이 90/10 이하이면 수지에 차지하는 광반응성 관능기의 비율이 충분하므로, 소망하는 가교구조의 형성을 행할 수 있다. 또한 수지성분에 있어서의 산가도가 지나치게 높지 않으므로, 노광부에 있어서의 알칼리 현상액에 대한 용해성이 높아지기 어려운 점에서 형성된 패턴이 목표로 하는 선폭보다 가늘어지는 것이나, 패턴의 결락을 억제할 수 있다.The mixing ratio of component (A) and component (B) is preferably 30/70 to 90/10 in a weight ratio (A)/(B), more preferably 60/40 to 80/20. When the mixing ratio of component (A) is 30/70 or more, the cured film after photocuring is unlikely to become brittle, and furthermore, since the acid value of the film in the unexposed area is unlikely to decrease, the decrease in solubility in an alkaline developer can be suppressed. Therefore, the problem of the pattern edge being rough or not becoming sharp is unlikely to occur. In addition, when the mixing ratio of component (A) is 90/10 or less, the ratio of the photoreactive functional group in the resin is sufficient, so that the formation of the desired crosslinked structure can be performed. In addition, since the acid value in the resin component is not too high, the solubility in an alkaline developer in the exposed area is unlikely to increase, so that the formed pattern becomes thinner than the target line width or the pattern is suppressed from being lost.
본 발명의 감광성 수지 조성물은 (C)에폭시기를 2개 이상 갖는 에폭시 화합물을 포함한다.The photosensitive resin composition of the present invention comprises (C) an epoxy compound having two or more epoxy groups.
(C)에폭시기를 2개 이상 갖는 에폭시 화합물의 예에는 비스페놀A형 에폭시 화합물, 비스페놀F형 에폭시 화합물, 비스페놀플루오렌형 에폭시 화합물, 페놀노볼락형 에폭시 화합물, 크레졸노볼락형 에폭시 화합물(예를 들면, EPPN-501H:니폰 카야쿠 가부시키가이샤제), 페놀아랄킬형 에폭시 화합물, 나프탈렌 골격을 포함하는 페놀노볼락 화합물(예를 들면, NC-7000L:니폰 카야쿠 가부시키가이샤제), 나프톨아랄킬형 에폭시 화합물, 트리스페놀메탄형 에폭시 화합물, 테트라키스페놀에탄형 에폭시 화합물, 다가 알콜의 글리시딜에테르, 다가 카르복실산의 글리시딜에스테르, 메타크릴산과 메타크릴산 글리시딜의 공중합체로 대표되는 (메타)아크릴산 글리시딜을 유닛으로서 포함하는 (메타)아크릴기를 갖는 모노머의 공중합체, 3',4'-에폭시시클로헥실메틸 3,4-에폭시시클로헥산카르복실레이트(예를 들면 셀록사이드 2021P: 가부시키가이샤 다이셀제), 부탄테트라카르복실산 테트라(3,4-에폭시시클로헥실메틸) 수식 ε-카프로락톤(예를 들면 에포리드 GT401:가부시키가이샤 다이셀제), 시코쿠 카세이 고교 가부시키가이샤제의 HiREM-1로 대표되는 에폭시시클로헥실기를 갖는 에폭시 화합물, 디시클로펜타디엔 골격을 갖는 다관능 에폭시 화합물(예를 들면, HP7200시리즈:DIC 가부시키가이샤제), 2,2-비스(히드록시메틸)-1-부탄올의 1,2-에폭시-4-(2-옥시라닐)시클로헥산 부가물(예를 들면 EHPE3150: 가부시키가이샤 다이셀제), 엑폭시화 폴리부타디엔(예를 들면 NISSO-PB·JP-100: 니폰 소다 가부시키가이샤제), 실리콘 골격을 갖는 에폭시 화합물 등이 포함된다.(C) Examples of epoxy compounds having two or more epoxy groups include bisphenol A type epoxy compounds, bisphenol F type epoxy compounds, bisphenol fluorene type epoxy compounds, phenol novolac type epoxy compounds, cresol novolac type epoxy compounds (e.g., EPPN-501H: manufactured by Nippon Kayaku Co., Ltd.), phenol aralkyl type epoxy compounds, phenol novolac compounds containing a naphthalene skeleton (e.g., NC-7000L: manufactured by Nippon Kayaku Co., Ltd.), naphthol aralkyl type epoxy compounds, trisphenol methane type epoxy compounds, tetrakisphenol ethane type epoxy compounds, glycidyl ethers of polyhydric alcohols, glycidyl esters of polyhydric carboxylic acids, copolymers of monomers having (meth)acrylic groups containing (meth)acrylic acid glycidyl as a unit, represented by copolymers of methacrylic acid and glycidyl methacrylate. 3',4'-epoxycyclohexylmethyl 3,4-epoxycyclohexanecarboxylate (e.g., Celoxide 2021P: manufactured by Daicel Corporation), butanetetracarboxylic acid tetra(3,4-epoxycyclohexylmethyl) formula ε-caprolactone (e.g., Eporide GT401: manufactured by Daicel Corporation), epoxy compounds having an epoxycyclohexyl group represented by HiREM-1 manufactured by Shikoku Kasei Kogyo Co., Ltd., polyfunctional epoxy compounds having a dicyclopentadiene skeleton (e.g., HP7200 series: manufactured by DIC Corporation), 1,2-epoxy-4-(2-oxiranyl)cyclohexane adduct of 2,2-bis(hydroxymethyl)-1-butanol (e.g., EHPE3150: manufactured by Daicel Corporation), These include epoxy polybutadiene (e.g., NISSO-PB JP-100: manufactured by Nippon Soda Co., Ltd.), epoxy compounds having a silicone skeleton, etc.
(C)에폭시기를 2개 이상 갖는 에폭시 화합물 중에서는 3,4-에폭시시클로헥실기를 갖는 에폭시 화합물, 또는 글리시딜기를 갖는 에폭시 화합물인 것이 바람직하고, 글리시딜기를 2개 이상 갖는 에폭시 화합물인 것이 보다 바람직하다. 글리시딜기를 2개 이상 갖는 에폭시 화합물을 사용함으로써, 경시에 의한 패턴 선폭의 변화를 억제할 수 있다. 또한 에폭시기를 2개 이상 갖는 에폭시 수지를 사용하는 것이 바람직한 것은 1분자내의 관능기수가 많을수록 열경화시에 에폭시 수지가 고분자량화되기 쉬워지므로, 경화막의 내용제성이 향상되기 쉬워진다.(C) Among the epoxy compounds having two or more epoxy groups, an epoxy compound having a 3,4-epoxycyclohexyl group or an epoxy compound having a glycidyl group is preferable, and an epoxy compound having two or more glycidyl groups is more preferable. By using an epoxy compound having two or more glycidyl groups, a change in pattern line width due to time can be suppressed. In addition, the reason why an epoxy resin having two or more epoxy groups is preferable is because the greater the number of functional groups in one molecule, the more easily the epoxy resin becomes high molecular weight during heat curing, and thus the solvent resistance of the cured film is easily improved.
(C)성분의 에폭시 화합물의 에폭시 당량은 100∼300g/eq인 것이 바람직하고, 100∼250g/eq인 것이 보다 바람직하다. 또한 (C)성분의 에폭시 화합물의 수 평균 분자량(Mn)은 100∼5000인 것이 바람직하다. 상기 에폭시 당량이 100∼300g/eq이며, 상기 에폭시 화합물의 수 평균 분자량(Mn)은 100∼5000이면 현상시의 현상 밀착성을 확보한 후에 내용제성이 좋은 경화막으로 할 수 있다. 또한 에폭시 당량이 300g/eq 이하이면 현상 속도가 적정한 범위가 되는 감광성 수지 조성물의 설계가 가능하며, 경화막의 내용제성도 확보할 수 있다. 또, 이들 화합물은 그 1종류의 화합물만을 이용해도 좋고, 2종 이상을 병용해도 좋다.(C) The epoxy equivalent of the epoxy compound of component is preferably 100 to 300 g/eq, more preferably 100 to 250 g/eq. In addition, the number average molecular weight (Mn) of the epoxy compound of component (C) is preferably 100 to 5000. When the epoxy equivalent is 100 to 300 g/eq and the number average molecular weight (Mn) of the epoxy compound is 100 to 5000, a cured film having good solvent resistance can be formed after securing developing adhesion at the time of development. In addition, when the epoxy equivalent is 300 g/eq or less, it is possible to design a photosensitive resin composition in which the developing speed is within an appropriate range, and the solvent resistance of the cured film can also be secured. In addition, these compounds may use only one type of compound, or two or more types may be used in combination.
본 발명의 감광성 수지 조성물은 (D)디시안디아미드를 포함한다. 에폭시 화합물의 경화제로서 디시안디아미드를 사용함으로써, 본 발명의 감광성 수지 조성물을 140℃ 이하의 저온에서 소성한 경우에도, 경화막의 선폭 재현성, 직선 재현성, 내용제성을 충분히 높일 수 있다. 예를 들면 산 무수물을 경화제로서 사용하는 계와 비교해서 반응성이 높고, 소량이라도 경화막의 내용제성을 확보할 수 있고, 보존 안정성도 우수한 점에서 디시안디아미드를 경화제로서 사용하는 것은 유용하다.The photosensitive resin composition of the present invention contains (D) dicyandiamide. By using dicyandiamide as a curing agent for an epoxy compound, even when the photosensitive resin composition of the present invention is fired at a low temperature of 140°C or lower, the line width reproducibility, linear reproducibility, and solvent resistance of the cured film can be sufficiently improved. For example, compared to a system using an acid anhydride as a curing agent, it is useful to use dicyandiamide as a curing agent because it has high reactivity, can secure the solvent resistance of the cured film even in a small amount, and has excellent storage stability.
(C)성분의 에폭시기의 당량수(Eep)와 (D)성분의 디시안디아미드의 아미노기의 당량수(Eam)의 비율은 Eep/Eam=0.5∼2.0인 것이 바람직하고, Eep/Eam=0.7∼1.5인 것이 보다 바람직하다. Eep/Eam이 0.5 이상이면 에폭시 화합물을 충분히 경화시킬 수 있으므로, 미반응의 에폭시 화합물이 감광성 수지 조성물 중에 남는 것을 억제할 수 있다. 또한 Eep/Eam이 2.0 이하이면 경화막의 밀착성 및 직선 재현성을 충분히 높일 수 있다.The ratio of the equivalent number (E ep ) of the epoxy group of component (C) to the equivalent number (E am ) of the amino group of dicyandiamide of component (D) is preferably E ep /E am = 0.5 to 2.0, and more preferably E ep /E am = 0.7 to 1.5. When E ep /E am is 0.5 or more, the epoxy compound can be sufficiently cured, so that unreacted epoxy compound can be suppressed from remaining in the photosensitive resin composition. In addition, when E ep /E am is 2.0 or less, the adhesion and straight line reproducibility of the cured film can be sufficiently improved.
또한 (C)성분과 (D)성분의 질량의 합계량은 고형분의 전체 질량에 대해서 6∼24질량%인 것이 바람직하고, 8∼22질량%인 것이 보다 바람직하다. 6∼24질량%의 (C)성분 및 (D)성분을 포함함으로써, 형성되는 경화막의 선폭 재현성, 직선 재현성, 내용제성을 충분히 높일 수 있다.In addition, the total mass of the (C) component and the (D) component is preferably 6 to 24 mass%, and more preferably 8 to 22 mass%, based on the total mass of the solid content. By including 6 to 24 mass% of the (C) component and the (D) component, the line width reproducibility, straight line reproducibility, and content resistance of the formed cured film can be sufficiently improved.
본 발명의 감광성 수지 조성물은 (E)광중합 개시제를 포함한다.The photosensitive resin composition of the present invention contains (E) a photopolymerization initiator.
(E)성분의 예에는 아세토페논, 2,2-디에톡시아세토페논, p-디메틸아세토페논, p-디메틸아미노프로피오페논, 디클로로아세토페논, 트리클로로아세토페논, p-tert-부틸아세토페논 등의 아세토페논류; 벤조페논, 2-클로로벤조페논, p,p'-비스디메틸아미노벤조페논 등의 벤조페논류; 벤질, 벤조인, 벤조인메틸에테르, 벤조인이소프로필에테르, 벤조인이소부틸에테르 등의 벤조인에테르류; 2-(o-클로로페닐)-4,5-페닐비이미다졸, 2-(o-클로로페닐)-4,5-디(m-메톡시페닐)비이미다졸, 2-(o-플루오로페닐)-4,5-디페닐비이미다졸, 2-(o-메톡시페닐)-4,5-디페닐비이미다졸, 2,4,5-트리아릴비이미다졸 등의 비이미다졸계 화합물류; 2-트리클로로메틸-5-스티릴-1,3,4-옥사디아졸, 2-트리클로로메틸-5-(p-시아노스티릴)-1,3,4-옥사디아졸, 2-트리클로로메틸-5-(p-메톡시스티릴)-1,3,4-옥사디아졸 등의 할로메틸디아졸 화합물류; 2,4,6-트리스(트리클로로메틸)-1,3,5-트리아진, 2-메틸-4,6-비스(트리클로로메틸)-1,3,5-트리아진, 2-페닐-4,6-비스(트리클로로메틸)-1,3,5-트리아진, 2-(4-클로로페닐)-4,6-비스(트리클로로메틸)-1,3,5-트리아진, 2-(4-메톡시페닐)-4,6-비스(트리클로로메틸)-1,3,5-트리아진, 2-(4-메톡시나프틸)-4,6-비스(트리클로로메틸)-1,3,5-트리아진, 2-(4-메톡시스티릴)-4,6-비스(트리클로로메틸)-1,3,5-트리아진, 2-(3,4,5-트리메톡시스티릴)-4,6-비스(트리클로로메틸)-1,3,5-트리아진, 2-(4-메틸티오스티릴)-4,6-비스(트리클로로메틸)-1,3,5-트리아진 등의 할로메틸-s-트리아진계 화합물류; 1,2-옥탄디온, 1-[4-(페닐티오)페닐]-,2-(O-벤조일옥심), 1-(4-페닐술파닐페닐)부탄-1,2-디온-2-옥심-O-벤조에이트, 1-(4-메틸술파닐페닐)부탄-1,2-디온-2-옥심-O-아세테이트, 1-(4-메틸술파닐페닐)부탄-1-온옥심-O-아세테이트 등의 O-아실옥심계 화합물류; 벤질디메틸케탈, 티옥산톤, 2-클로로티옥산톤, 2,4-디에틸티옥산톤, 2-메틸티옥산톤, 2-이소프로필티옥산톤 등의 황 화합물; 2-에틸안트라퀴논, 옥타메틸안트라퀴논, 1,2-벤즈안트라퀴논, 2,3-디페닐안트라퀴논 등의 안트라퀴논류; 아조비스이소부틸니트릴, 벤조일퍼옥사이드, 쿠멘퍼옥사이드 등의 유기 과산화물; 2-메르캅토벤조이미다졸, 2-메르캅토벤조옥사졸, 2-메르캅토벤조티아졸, 펜타에리스리톨테트라키스(3-메르캅토프로피오네이트) 등의 티올 화합물; 트리에탄올아민, 트리에틸아민 등의 제3급 아민 등이 포함된다. 또, 이들 광중합 개시제는 그 1종만을 단독으로 사용해도 좋고, 2종 이상을 병용해도 좋다.(E) Examples of components include acetophenones such as acetophenone, 2,2-diethoxyacetophenone, p-dimethylacetophenone, p-dimethylaminopropiophenone, dichloroacetophenone, trichloroacetophenone, and p-tert-butylacetophenone; benzophenones such as benzophenone, 2-chlorobenzophenone, and p,p'-bisdimethylaminobenzophenone; benzoin ethers such as benzyl, benzoin, benzoin methyl ether, benzoin isopropyl ether, and benzoin isobutyl ether; Biimidazole compounds such as 2-(o-chlorophenyl)-4,5-phenylbiimidazole, 2-(o-chlorophenyl)-4,5-di(m-methoxyphenyl)biimidazole, 2-(o-fluorophenyl)-4,5-diphenylbiimidazole, 2-(o-methoxyphenyl)-4,5-diphenylbiimidazole, and 2,4,5-triarylbiimidazole; Halomethyldiazole compounds such as 2-trichloromethyl-5-styryl-1,3,4-oxadiazole, 2-trichloromethyl-5-(p-cyanostyryl)-1,3,4-oxadiazole, and 2-trichloromethyl-5-(p-methoxystyryl)-1,3,4-oxadiazole; 2,4,6-Tris(trichloromethyl)-1,3,5-triazine, 2-methyl-4,6-bis(trichloromethyl)-1,3,5-triazine, 2-phenyl-4,6-bis(trichloromethyl)-1,3,5-triazine, 2-(4-chlorophenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, 2-(4-methoxynaphthyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, 2-(4-methoxystyryl)-4,6-bis(trichloromethyl)-1,3,5-triazine, Halomethyl-s-triazine compounds, such as 2-(3,4,5-trimethoxystyryl)-4,6-bis(trichloromethyl)-1,3,5-triazine, 2-(4-methylthiostyryl)-4,6-bis(trichloromethyl)-1,3,5-triazine; O-acyl oxime compounds, such as 1,2-octanedione, 1-[4-(phenylthio)phenyl]-,2-(O-benzoyloxime), 1-(4-phenylsulfanylphenyl)butane-1,2-dione-2-oxime-O-benzoate, 1-(4-methylsulfanylphenyl)butane-1,2-dione-2-oxime-O-acetate, and 1-(4-methylsulfanylphenyl)butane-1-one oxime-O-acetate; Sulfur compounds such as benzyl dimethyl ketal, thioxanthone, 2-chlorothioxanthone, 2,4-diethylthioxanthone, 2-methylthioxanthone, and 2-isopropylthioxanthone; anthraquinones such as 2-ethylanthraquinone, octamethylanthraquinone, 1,2-benzanthraquinone, and 2,3-diphenylanthraquinone; organic peroxides such as azobisisobutylnitrile, benzoyl peroxide, and cumene peroxide; thiol compounds such as 2-mercaptobenzimidazole, 2-mercaptobenzoxazole, 2-mercaptobenzothiazole, and pentaerythritol tetrakis(3-mercaptopropionate); tertiary amines such as triethanolamine and triethylamine, etc. In addition, these photopolymerization initiators may be used alone, or two or more may be used in combination.
특히, 착색재를 포함하는 감광성 수지 조성물로 하는 경우에는 O-아실옥심계 화합물류(케토옥심을 포함한다)를 사용하는 것이 바람직하다. 구체적 화합물군의 예에는 일반식(3) 또는 일반식(8)로 나타내어지는 O-아실옥심계 광중합 개시제가 포함되는 것이 바람직하다. 이들 화합물군 중에서 착색재를 고안료 농도로 사용하는 경우 및 차광막 패턴을 형성하는 경우에는 365nm에 있어서의 몰 흡광계수가 10000L/㏖·㎝ 이상인 O-아실옥심계 광중합 개시제를 사용하는 것이 보다 바람직하다. 그 구체적 화합물군으로서는 일반식(3)으로 나타내어지는 O-아실옥심계 광중합 개시제가 있다. 또, 본 발명에서 말하는 「광중합 개시제」란 증감제를 포함하는 의미로 사용된다.In particular, when using a photosensitive resin composition including a coloring material, it is preferable to use O-acyl oxime compounds (including ketoxime). Specific examples of the compound group preferably include an O-acyl oxime photopolymerization initiator represented by the general formula (3) or the general formula (8). Among these compound groups, when using the coloring material at a high concentration and when forming a light-shielding film pattern, it is more preferable to use an O-acyl oxime photopolymerization initiator having a molar absorption coefficient at 365 nm of 10,000 L/mol cm or more. Specific examples of the compound group include an O-acyl oxime photopolymerization initiator represented by the general formula (3). In addition, the "photopolymerization initiator" as used in the present invention is used to mean including a sensitizer.
(식(3) 중, R6, R7은 각각 독립적으로 C1∼C15의 알킬기, C6∼C18의 아릴기, C7∼C20의 아릴알킬기 또는 C4∼C12의 복소환기이며, R8은 C1∼C15의 알킬기, C6∼C18의 아릴기 또는 C7∼C20의 아릴알킬기이다. 여기에서, 알킬기 및 아릴기는 C1∼C10의 알킬기, C1∼C10의 알콕시기, C1∼C10의 알카노일기, 할로겐으로 치환되어 있어도 좋고, 알킬렌 부분은 불포화 결합, 에테르 결합, 티오에테르 결합, 에스테르 결합을 포함하고 있어도 좋다. 또한 알킬기는 직쇄, 분기 또는 환상의 어느 알킬기이어도 좋다.(In formula (3), R 6 and R 7 are each independently a C1 to C15 alkyl group, a C6 to C18 aryl group, a C7 to C20 arylalkyl group, or a C4 to C12 heterocyclic group, and R 8 is a C1 to C15 alkyl group, a C6 to C18 aryl group, or a C7 to C20 arylalkyl group. Here, the alkyl group and the aryl group may be substituted with a C1 to C10 alkyl group, a C1 to C10 alkoxy group, a C1 to C10 alkanoyl group, or a halogen, and the alkylene moiety may include an unsaturated bond, an ether bond, a thioether bond, or an ester bond. In addition, the alkyl group may be any linear, branched, or cyclic alkyl group.
(식(8) 중, R13 및 R14는 각각 독립적으로 탄소수 1∼10의 직쇄상 또는 분기상의 알킬기이거나, 탄소수 4∼10의 시클로알킬기, 시클로알킬알킬기 또는 알킬시클로알킬기이거나, 또는 탄소수 1∼6의 알킬기로 치환되어 있어도 좋은 페닐기이다. R15는 독립적으로 탄소수 2∼10의 직쇄상 또는 분기상의 알킬기 또는 알케닐기이며, 상기 알킬기 또는 알케닐기 중의 -CH2-기의 일부가 -O-기로 치환되어 있어도 좋다. 또한, 이들 R13∼R15의 기 중의 수소원자의 일부가 할로겐원자로 치환되어 있어도 좋다.)(In formula (8), R 13 and R 14 are each independently a linear or branched alkyl group having 1 to 10 carbon atoms, a cycloalkyl group, a cycloalkylalkyl group or an alkylcycloalkyl group having 4 to 10 carbon atoms, or a phenyl group which may be substituted with an alkyl group having 1 to 6 carbon atoms. R 15 is independently a linear or branched alkyl group or an alkenyl group having 2 to 10 carbon atoms, and a part of the -CH 2 - group in the alkyl group or alkenyl group may be substituted with an -O- group. Furthermore, a part of the hydrogen atoms in the groups R 13 to R 15 may be substituted with a halogen atom.)
(E)성분의 질량은 (A)성분과 (B)성분의 전체 질량에 대해서 0.1∼30질량%인 것이 바람직하고, 1∼25질량%인 것이 보다 바람직하다. (E)성분의 질량이 (A)성분과 (B)성분의 전체 질량에 대해서 0.1질량% 이상인 경우에는 적당한 광중합의 속도를 가지므로, 감도의 저하를 억제할 수 있다. 또한 30질량% 이하인 경우에는 마스크에 대해서 충실한 선폭을 재현할 수 있음과 아울러 패턴 에지를 샤프하게 할 수 있다.The mass of the (E) component is preferably 0.1 to 30 mass% with respect to the total mass of the (A) component and the (B) component, and more preferably 1 to 25 mass%. When the mass of the (E) component is 0.1 mass% or more with respect to the total mass of the (A) component and the (B) component, an appropriate photopolymerization speed is achieved, so that a decrease in sensitivity can be suppressed. Furthermore, when it is 30 mass% or less, a faithful line width with respect to the mask can be reproduced, and the pattern edge can be made sharp.
본 발명의 감광성 수지 조성물은 (F)용제를 포함한다.The photosensitive resin composition of the present invention contains (F) a solvent.
(F)감광성 수지 조성물에 포함되는 용제의 예에는 메탄올, 에탄올, n-프로판올, 이소프로판올, 에틸렌글리콜, 프로필렌글리콜, 3-메톡시-1-부탄올, 에틸렌글리콜모노부틸에테르, 3-히드록시-2-부타논, 디아세톤알콜 등의 알콜류; α- 또는 β-테르피네올 등의 테르펜류; 아세톤, 메틸에틸케톤, 시클로헥사논, N-메틸-2-피롤리돈 등의 케톤류; 톨루엔, 크실렌, 테트라메틸벤젠 등의 방향족 탄화수소류; 셀로솔브, 메틸셀로솔브, 에틸셀로솔브, 카르비톨, 메틸카르비톨, 에틸카르비톨, 부틸카르비톨, 디에틸렌글리콜에틸메틸에테르, 프로필렌글리콜모노메틸에테르, 프로필렌글리콜모노에틸에테르, 디프로필렌글리콜모노메틸에테르, 디프로필렌글리콜모노에틸에테르, 트리에틸렌글리콜모노메틸에테르, 트리에틸렌글리콜모노에틸에테르 등의 글리콜에테르류; 아세트산 에틸, 아세트산 부틸, 락트산 에틸, 3-메톡시부틸아세테이트, 3-메톡시-3-부틸아세테이트, 셀로솔브아세테이트, 에틸셀로솔브아세테이트, 부틸셀로솔브아세테이트, 카르비톨아세테이트, 에틸카르비톨아세테이트, 부틸카르비톨아세테이트, 프로필렌글리콜모노메틸에테르아세테이트, 프로필렌글리콜모노에틸에테르아세테이트 등의 에스테르류 등이 포함된다. 이들을 이용하여 용해, 혼합시킴으로써, 균일한 용액상의 조성물로 할 수 있다. 이들 용제는 도포성 등의 필요특성으로 하기 위해서 이들을 단독 또는 2종 이상을 병용해도 좋다.(F) Examples of solvents included in the photosensitive resin composition include alcohols such as methanol, ethanol, n-propanol, isopropanol, ethylene glycol, propylene glycol, 3-methoxy-1-butanol, ethylene glycol monobutyl ether, 3-hydroxy-2-butanone, and diacetone alcohol; terpenes such as α- or β-terpineol; ketones such as acetone, methyl ethyl ketone, cyclohexanone, and N-methyl-2-pyrrolidone; aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene; Glycol ethers such as cellosolve, methyl cellosolve, ethyl cellosolve, carbitol, methyl carbitol, ethyl carbitol, butyl carbitol, diethylene glycol ethyl methyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, triethylene glycol monomethyl ether, and triethylene glycol monoethyl ether; esters such as ethyl acetate, butyl acetate, ethyl lactate, 3-methoxybutyl acetate, 3-methoxy-3-butyl acetate, cellosolve acetate, ethyl cellosolve acetate, butyl cellosolve acetate, carbitol acetate, ethyl carbitol acetate, butyl carbitol acetate, propylene glycol monomethyl ether acetate, and propylene glycol monoethyl ether acetate. By dissolving and mixing these, a uniform solution composition can be made. These solvents may be used alone or in combination of two or more in order to provide necessary properties such as applicability.
(F)성분의 함유량은 목표로 하는 점도에 의해 변화되지만, 감광성 수지 조성물 용액 중에 있어서 60∼90질량%인 것이 바람직하다.(F) The content of the component varies depending on the target viscosity, but is preferably 60 to 90 mass% in the photosensitive resin composition solution.
본 발명의 감광성 수지 조성물은 경화 촉진제로서 (G)이미다졸 화합물을 포함해도 좋다.The photosensitive resin composition of the present invention may contain a (G)imidazole compound as a curing accelerator.
상기 (G)이미다졸 화합물의 예에는 이미다졸, 1H 이미다졸, 2-메틸이미다졸, 1,2-디메틸이미다졸, 2-에틸이미다졸, 2-에틸-4-메틸이미다졸, 2-페닐이미다졸, 4-페닐이미다졸, 1-벤질-2-메틸이미다졸, 1-벤질-2-페닐이미다졸, 1-시아노에틸-2-페닐이미다졸, 1-(2-시아노에틸)-2-에틸-4-메틸이미다졸 등이 포함된다.Examples of the above (G)imidazole compounds include imidazole, 1H-imidazole, 2-methylimidazole, 1,2-dimethylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 4-phenylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-(2-cyanoethyl)-2-ethyl-4-methylimidazole, and the like.
또한 (G)이미다졸 화합물의 질량은 (C)에폭시 화합물과 (D)디시안디아미드의 고형분의 전체 질량에 대해서 0.05∼2질량%인 것이 바람직하고, 0.1∼1질량%인 것이 보다 바람직하다. (G)이미다졸 화합물의 질량을 (C)에폭시 화합물과 (D)디시안디아미드의 고형분의 전체 질량에 대해서 0.05질량% 이상으로 함으로써 에폭시 수지와의 반응을 촉진시킬 수 있고, 경화막의 내용제성을 향상시킬 수 있다. 또한 (G)이미다졸 화합물의 질량을 2질량% 이하로 함으로써, 용제에 대한 용해성이 높지 않은 디시안디아미드가 감광성 수지 조성물 중에서 석출되지 않아 에폭시 화합물과의 반응을 촉진시킬 수 있다.In addition, the mass of the (G) imidazole compound is preferably 0.05 to 2 mass%, more preferably 0.1 to 1 mass%, based on the total mass of the solid content of the (C) epoxy compound and (D) dicyandiamide. By setting the mass of the (G) imidazole compound to 0.05 mass% or more based on the total mass of the solid content of the (C) epoxy compound and (D) dicyandiamide, the reaction with the epoxy resin can be promoted, and the solvent resistance of the cured film can be improved. In addition, by setting the mass of the (G) imidazole compound to 2 mass% or less, dicyandiamide, which has low solubility in solvents, does not precipitate in the photosensitive resin composition, thereby promoting the reaction with the epoxy compound.
본 발명의 감광성 수지 조성물은 (H)착색재를 포함해도 좋다.The photosensitive resin composition of the present invention may contain (H) a coloring agent.
상기 착색재는 유기 안료 또는 무기 안료로 이루어지는 군에서 선택되는 착색재인 것이 바람직하고, 유기 흑색 안료 또는 무기 흑색 안료로 이루어지는 군에서 선택되는 차광재인 것이 보다 바람직하다.It is preferable that the above coloring material is a coloring material selected from the group consisting of organic pigments or inorganic pigments, and it is more preferable that the above coloring material is a light-blocking material selected from the group consisting of organic black pigments or inorganic black pigments.
(H)성분인 착색재의 함유량은 소망의 차광도에 의해 임의로 정할 수 있다. 감광성 수지 조성물 중의 고형분에 대해서 20∼80질량%인 것이 바람직하고, 40∼70질량%인 것이 보다 바람직하다. 착색재가 감광성 수지 조성물 중의 고형분에 대해서 20질량% 이상이이면 차광성을 충분히 얻을 수 있다. 착색재가 감광성 수지 조성물 중의 고형분에 대해서 80질량% 이하이면 본래의 바인더가 되는 감광성 수지의 함유량이 감소하는 일이 없기 때문에, 소망하는 현상 특성 및 막형성능을 얻을 수 있다.(H) The content of the coloring agent as the component can be arbitrarily determined according to the desired light-shielding degree. It is preferably 20 to 80 mass% based on the solid content in the photosensitive resin composition, and more preferably 40 to 70 mass%. If the coloring agent is 20 mass% or more based on the solid content in the photosensitive resin composition, sufficient light-shielding properties can be obtained. If the coloring agent is 80 mass% or less based on the solid content in the photosensitive resin composition, the content of the photosensitive resin, which is the original binder, does not decrease, so the desired developing characteristics and film-forming performance can be obtained.
(H)성분인 흑색 유기 안료의 예에는 페릴렌 블랙, 아닐린 블랙, 시아닌 블랙, 락탐 블랙 등이 포함된다. 혼색 유기 안료의 예에는 아조 안료, 축합 아조 안료, 아조메틴 안료, 프탈로시아닌 안료, 퀴나크리돈 안료, 이소인돌리논 안료, 이소인돌린 안료, 디옥사진 안료, 스렌 안료, 페릴렌 안료, 페리논 안료, 퀴노프탈론 안료, 디케토피롤로피롤 안료, 티오인디고 안료 등의 유기 안료로부터 선택되는 적어도 2색이 혼합해서 의사 흑색화된 것이 포함된다. 흑색 무기 안료로서는 카본블랙, 산화크롬, 산화철, 티타늄 블랙 등이 포함된다. 이들 (H)성분은 목적으로 하는 감광성 수지 조성물의 기능에 따라, 그 1종만을 단독으로 사용해도 좋고, 2종 이상을 병용해도 좋다. 상기 안료 중에서는 차광성, 표면 평활성, 분산 안정성, 수지와의 친화성의 관점으로부터 카본블랙인 것이 바람직하다. 또한 유기 안료를 사용하는 경우에는 평균 입자지름 50nm 이하의 미분산을 달성하기 위해서 미립화 가공이 된 것(BET법에 의한 비표면적이 50㎡/g 이상인 것)이 바람직하다.(H) Examples of black organic pigments, which are components, include perylene black, aniline black, cyanine black, lactam black, etc. Examples of mixed color organic pigments include at least two colors selected from organic pigments, such as azo pigments, condensed azo pigments, azomethine pigments, phthalocyanine pigments, quinacridone pigments, isoindolinone pigments, isoindoline pigments, dioxazine pigments, srene pigments, perylene pigments, perinone pigments, quinophthalone pigments, diketopyrrolopyrrole pigments, and thioindigo pigments, which are mixed to create a pseudo-black color. Black inorganic pigments include carbon black, chromium oxide, iron oxide, titanium black, etc. Depending on the function of the intended photosensitive resin composition, these (H) components may be used alone or in combination of two or more. Among the above pigments, carbon black is preferable from the viewpoints of light-shielding properties, surface smoothness, dispersion stability, and compatibility with resin. In addition, when using an organic pigment, one that has undergone atomization processing (one having a specific surface area of 50 m2/g or more by the BET method) is preferable in order to achieve fine dispersion with an average particle diameter of 50 nm or less.
상기 (H)성분으로서 사용 가능한 유기 안료의 예에는 컬러 인덱스명에서 이하의 넘버의 것이 포함되지만, 이들에 한정되는 것은 아니다.Examples of organic pigments that can be used as the above (H) component include, but are not limited to, those with the following numbers in the color index name.
피그먼트 레드 2, 3, 4, 5, 9, 12, 14, 22, 23, 31, 38, 112, 122, 144, 146, 147, 149, 166, 168, 170, 175, 176, 177, 178, 179, 184, 185, 187, 188, 202, 207, 208, 209, 210, 213, 214, 220, 221, 242, 247, 253, 254, 255, 256, 257, 262, 264, 266, 272, 279 등 Pigment Red 2, 3, 4, 5, 9, 12, 14, 22, 23, 31, 38, 112, 122, 144, 146, 147, 149, 166, 168, 170, 175, 176, 177, 178, 179, 184, 185, 187, 188, 202, 207, 208, 209, 210, 213, 214, 220, 221, 242, 247, 253, 254, 255, 256, 257, 262, 264, 266, 272, 279, etc.
피그먼트 오렌지 5, 13, 16, 34, 36, 38, 43, 61, 62, 64, 67, 68, 71, 72, 73, 74, 81 등 Pigment Orange 5, 13, 16, 34, 36, 38, 43, 61, 62, 64, 67, 68, 71, 72, 73, 74, 81, etc.
피그먼트 옐로 1, 3, 12, 13, 14, 16, 17, 55, 73, 74, 81, 83, 93, 95, 97, 109, 110, 111, 117, 120, 126, 127, 128, 129, 130, 136, 138, 139, 150, 151, 153, 154, 155, 173, 174, 175, 176, 180, 181, 183, 185, 191, 194, 199, 213, 214 등 Pigment Yellow 1, 3, 12, 13, 14, 16, 17, 55, 73, 74, 81, 83, 93, 95, 97, 109, 110, 111, 117, 120, 126, 127, 128, 129, 130, 136, 138, 139, 150, 151, 153, 154, 155, 173, 174, 175, 176, 180, 181, 183, 185, 191, 194, 199, 213, 214, etc.
피그먼트 그린 7, 36, 58 등 Pigment Green 7, 36, 58, etc.
피그먼트 블루 15, 15:1, 15:2, 15:3, 15:4, 15:6, 16, 60, 80 등 Pigment Blue 15, 15:1, 15:2, 15:3, 15:4, 15:6, 16, 60, 80, etc.
피그먼트 바이올렛 19, 23, 37 등Pigment Violet 19, 23, 37, etc.
또한 (H)성분의 착색재는 미리 용제에 분산제와 함께 분산시켜서 착색재 분산액으로 한 후에, 착색막용 감광성 수지 조성물로서 배합하는 것이 바람직하다. 여기에서, 분산시키는 용제는 상술한 것을 사용할 수 있다. 상술한 용제 중에서는 프로필렌글리콜모노메틸에테르아세테이트, 3-메톡시부틸아세테이트 등이 바람직하다.In addition, it is preferable to disperse the coloring material of the (H) component in advance in a solvent together with a dispersant to make a coloring material dispersion, and then mix it as a photosensitive resin composition for a colored film. Here, the solvent for dispersing can be any of the above-mentioned ones. Among the above-mentioned solvents, propylene glycol monomethyl ether acetate, 3-methoxybutyl acetate, etc. are preferable.
상기 분산제는 각종 고분자 분산제 등의 공지의 분산제를 사용할 수 있다. 분산제의 예에는 종래 안료 분산에 사용되고 있는 공지의 화합물(분산제, 분산 습윤제, 분산 촉진제 등의 명칭으로 시판되어 있는 화합물 등)을 특별히 제한 없이 사용할 수 있다. 상기 분산제의 예에는 양이온성 고분자계 분산제, 음이온성 고분자계 분산제, 비이온성 고분자계 분산제, 안료 유도체형 분산제(분산 조제) 등이 포함된다. 특히, 안료에의 흡착점으로서 이미다졸릴기, 피롤릴기, 피리딜기, 1급, 2급 또는 3급의 아미노기 등의 양이온성의 관능기를 갖고, 아민가가 1∼100mgKOH/g, 수 평균 분자량이 1000∼10만인 양이온성 고분자계 분산제인 것이 바람직하다. 상기 분산제의 배합량에 대해서는 착색재에 대해서 1∼30질량%인 것이 바람직하고, 2∼25질량%인 것이 보다 바람직하다.The dispersant may be a known dispersant such as various polymer dispersants. Examples of the dispersant include, without particular limitation, known compounds that have been conventionally used for pigment dispersion (compounds sold under the names of dispersant, dispersion wetting agent, dispersion accelerator, etc.). Examples of the dispersant include a cationic polymer-based dispersant, an anionic polymer-based dispersant, a nonionic polymer-based dispersant, a pigment derivative-type dispersant (dispersion assistant), etc. In particular, a cationic polymer-based dispersant having a cationic functional group such as an imidazolyl group, a pyrrolyl group, a pyridyl group, a primary, secondary, or tertiary amino group as an adsorption site for the pigment, and an amine value of 1 to 100 mgKOH/g and a number average molecular weight of 1,000 to 100,000 is preferable. The blending amount of the dispersant is preferably 1 to 30 mass% with respect to the colorant, and more preferably 2 to 25 mass%.
또한 착색재 분산액을 조제할 때에, 상기 분산제에 추가해서 (A)성분의 불포화기 함유 알칼리 가용성 수지의 일부를 공분산시켜도 좋다. (A)성분의 불포화기 함유 알칼리 가용성 수지의 일부를 공분산시킴으로써, 노광 감도를 고감도로 유지하기 쉽고, 현상시의 밀착성이 양호하며 잔사의 문제도 발생하기 어려운 감광성 수지 조성물로 할 수 있다. 그 때의 (A)성분의 배합량은 착색재 분산액 중 2∼20질량%인 것이 바람직하고, 5∼15질량%인 것이 보다 바람직하다. (A)성분이 2질량% 이상이면 공분산에 의한 감도 향상, 밀착성 향상, 잔사 저감이라는 효과를 얻을 수 있다. (A)성분이 20질량% 이하이면 특히 착색재의 함유량이 클 때에도 착색재 분산액의 점도가 지나치게 높아지지 않아 균일하게 분산시킬 수 있다. 얻어진 착색재 분산액은 (A)∼(G)성분과 혼합하고, 필요에 따라 다른 성분을 첨가해서 제막조건에 적합한 점도로 조정함으로써, 본 발명의 제조 방법에 사용하는 감광성 수지 조성물로 할 수 있다.In addition, when preparing a coloring material dispersion, a part of the unsaturated group-containing alkali-soluble resin of component (A) may be co-dispersed in addition to the dispersant. By co-dispersing a part of the unsaturated group-containing alkali-soluble resin of component (A), a photosensitive resin composition can be obtained which is easy to maintain a high exposure sensitivity, has good adhesion during development, and is unlikely to cause a residue problem. The blending amount of component (A) at that time is preferably 2 to 20 mass% in the coloring material dispersion, and is more preferably 5 to 15 mass%. When component (A) is 2 mass% or more, the effects of improved sensitivity, improved adhesion, and reduced residue due to co-dispersion can be obtained. When component (A) is 20 mass% or less, even when the content of the coloring material is particularly large, the viscosity of the coloring material dispersion does not become excessively high, so that it can be uniformly dispersed. The obtained colorant dispersion can be mixed with components (A) to (G), and other components can be added as needed to adjust the viscosity to a viscosity suitable for film forming conditions, thereby producing a photosensitive resin composition used in the manufacturing method of the present invention.
본 발명의 감광성 수지 조성물은 (I)실리카 입자를 포함해도 좋다.The photosensitive resin composition of the present invention may contain (I) silica particles.
(I)성분인 실리카 입자는 기상반응 또는 액상반응이라는 제조 방법이나, 형상(구상, 비구상)은 특별히 제한되지 않는다. 또한 실란커플링제 처리 등으로 표면 처리를 행한 실리카 입자도 특별히 제한 없이 사용할 수 있다.(I) The silica particles, which are the component, are not particularly limited in their manufacturing method (gas phase reaction or liquid phase reaction) or in their shape (spherical or non-spherical). In addition, silica particles that have undergone surface treatment, such as treatment with a silane coupling agent, can also be used without particular limitations.
본 발명에서 사용하는 (I)성분인 실리카 입자의 종류는 특별히 한정되지 않는다. 중실 실리카를 사용해도 좋고, 중공 실리카 입자를 사용해도 좋다. 또, 「중공 실리카 입자」란 입자의 내부에 공동을 갖는 실리카 입자인 것이다.The type of silica particles, which are the (I) component used in the present invention, is not particularly limited. Solid silica particles may be used, or hollow silica particles may be used. In addition, "hollow silica particles" are silica particles having cavities inside the particles.
상기 실리카 입자를 사용함으로써, 상기 실리카 입자를 포함하는 차광막의 굴절율을 낮게 할 수 있다.By using the above silica particles, the refractive index of a light shielding film including the above silica particles can be lowered.
상기 실리카 입자의 평균 입자지름은 1∼95nm인 것이 바람직하고, 5∼90nm인 것이 보다 바람직하다. 평균 입자지름이 작은 실리카 입자를 사용함으로써 세선 패턴 측면의 덜컹거림을 억제할 수 있다. 또한 경화막(도막) 표면의 요철을 저감하는 효과가 있고, 경화막(도막) 면내의 반사율의 불균일을 억제할 수 있다.The average particle diameter of the above silica particles is preferably 1 to 95 nm, and more preferably 5 to 90 nm. By using silica particles having a small average particle diameter, rattling on the side of the fine line pattern can be suppressed. In addition, there is an effect of reducing the unevenness of the surface of the cured film (coating film), and unevenness of reflectivity within the surface of the cured film (coating film) can be suppressed.
또한 상기 실리카 입자의 함유량은 감광성 수지 조성물의 전체 질량에 대해서 0.1∼5질량부인 것이 바람직하고, 0.1∼2질량부인 것이 보다 바람직하다. 실리카 입자의 함유량이 상기 범위내에 있으면 저반사율화를 달성하면서, 양호한 패터닝성을 담보할 수 있다.In addition, the content of the silica particles is preferably 0.1 to 5 parts by mass, and more preferably 0.1 to 2 parts by mass, relative to the total mass of the photosensitive resin composition. When the content of the silica particles is within the above range, low reflectivity can be achieved while ensuring good patterning properties.
상기 실리카 입자의 평균 입자지름은 동적 광산란법의 입도 분포계 「입경 애널라이저 FPAR-1000」(오츠카 덴시 가부시키가이샤제)을 사용하고, 쿰란트법에 의해 측정할 수 있다.The average particle diameter of the above silica particles can be measured by the Qumrant method using a particle size distribution meter “Particle Size Analyzer FPAR-1000” (manufactured by Otsuka Electronics Co., Ltd.) of the dynamic light scattering method.
또한 상기 실리카 입자의 굴절율은 1.10∼1.47의 것을 사용할 수 있다. 통상의 실리카 입자의 굴절율 1.45∼1.47의 것을 사용할 수 있는 것 외에, 낮은 굴절율을 갖는 중공 실리카 입자를 사용함으로써, 통상의 실리카 입자만을 포함하는 차광막의 굴절율보다 차광막의 굴절율을 보다 낮게 할 수도 있다.In addition, the refractive index of the silica particles may be 1.10 to 1.47. In addition to being able to use the refractive index of ordinary silica particles of 1.45 to 1.47, by using hollow silica particles having a low refractive index, the refractive index of the light shielding film may be made lower than the refractive index of a light shielding film containing only ordinary silica particles.
또한 실리카 입자의 굴절율은 상기 실리카 입자를 분말상으로 처리한 것과, 굴절율이 기지의 표준 굴절액을 혼합함으로써 얻어진 투명의 혼합액으로부터 구할 수 있다. 이 경우, 상기 혼합액의 표준 굴절액의 굴절율을 실리카 입자의 굴절율로 한다. 또, 상기 실리카 입자의 굴절율은 아베 굴절율계를 이용하여 측정할 수 있다.In addition, the refractive index of the silica particles can be obtained from a transparent mixture obtained by mixing the silica particles processed into a powder form and a standard refractive liquid having a known refractive index. In this case, the refractive index of the standard refractive liquid of the mixture is taken as the refractive index of the silica particles. In addition, the refractive index of the silica particles can be measured using an Abbe refractometer.
또한 경화막(도막) 상에 형성되는 층과 경화막(도막)의 굴절율의 차에 의해 생기는 반사를 억제할 수 있으므로, 반사 방지막 등을 별도 설치하지 않아도 반사를 억제할 수 있다.In addition, since it is possible to suppress reflection caused by the difference in refractive index between the layer formed on the cured film (coating) and the cured film (coating), reflection can be suppressed without separately installing an anti-reflection film, etc.
상기 실리카 입자의 형상은 진구상이어도 좋고, 타원형상이어도 좋다. 본 발명에서 사용하는 실리카 입자의 형상은 진구상인 것이 바람직하다.The shape of the above silica particles may be spherical or elliptical. It is preferable that the shape of the silica particles used in the present invention is spherical.
상기 실리카 입자는 진구도가 1.0∼1.5인 것이 바람직하다. 실리카 입자의 진구도가 이 범위이면, 입자형상은 진구에 가까워진다. 이 때문에, 막두께가 얇은 차광막 중에 균질하게 충전할 수 있게 되고, 피막 표면 평활성을 유지하면서, 상기 실리카 입자가 피막 표면으로부터 외부로 노출되지 않는 차광막을 형성할 수 있다. 그 때문에 굴절율이 낮고, 충분한 강도를 갖는 차광막을 얻을 수 있다. 이러한 막면측의 저반사를 실현할 수 있는 차광막을 얻으려고 할 경우, 광중합 개시제의 선택도 중요한 요소이며, 차광막에 있어서 일반적으로 사용되는 옥심 에스테르계 광중합 개시제를 사용함과 아울러, 고형분 중 0.5∼5%의 티올 화합물을 첨가하는 것이 바람직하다.The above silica particles preferably have a sphericity of 1.0 to 1.5. When the sphericity of the silica particles is in this range, the particle shape approaches a sphere. Therefore, it is possible to uniformly fill a light-shielding film having a thin film thickness, and a light-shielding film can be formed in which the silica particles are not exposed to the outside from the film surface while maintaining the smoothness of the film surface. Therefore, a light-shielding film having a low refractive index and sufficient strength can be obtained. When attempting to obtain a light-shielding film capable of realizing such low reflection on the film surface side, the selection of a photopolymerization initiator is also an important factor, and it is preferable to use an oxime ester photopolymerization initiator generally used in light-shielding films and add 0.5 to 5% of a thiol compound in the solid content.
상기 실리카 입자의 진구도는 입자의 최장경과 최단경의 비율(임의의 100개의 실리카 입자의 평균값)로부터 구할 수 있다. 여기에서, 실리카 입자의 최장경과 최단경은 실리카 입자를 투과형 전자현미경으로 촬영하고, 얻어진 현미경 사진으로부터 실리카 입자의 최장경과 최단경을 측정해서 구해진 값이다.The sphericity of the above silica particles can be obtained from the ratio of the longest and shortest diameters of the particles (the average value of 100 random silica particles). Here, the longest and shortest diameters of the silica particles are values obtained by photographing the silica particles with a transmission electron microscope and measuring the longest and shortest diameters of the silica particles from the obtained microscopic image.
상기 (I)성분인 실리카 입자는 용제에 분산시킨 실리카 입자 분산체로서 다른 배합 성분과 혼합할 수 있다. 분산제는 안료(차광 성분) 분산에 사용되고 있는 공지의 화합물(분산제, 분산 습윤제, 분산 촉진제 등의 명칭으로 시판되고 있는 화합물 등) 등을 특별히 제한 없이 사용할 수 있다.The silica particles of the above (I) component are a silica particle dispersion dispersed in a solvent and can be mixed with other compounding ingredients. The dispersant can be a known compound used for dispersing pigments (light-blocking components) (compounds sold commercially under the names of dispersant, dispersion wetting agent, dispersion accelerator, etc.) without any particular limitation.
본 발명의 감광성 수지 조성물에는 필요에 따라 열중합 금지제 및 산화 방지제, 가소제, 충전재, 레벨링제, 소포제, 계면활성제, 커플링제 등의 첨가제를 배합할 수 있다. 여기에서, 열중합 금지제 및 산화 방지제의 예에는 히드로퀴논, 히드로퀴논모노메틸에테르, 피로갈롤, tert-부틸카테콜, 페노티아진, 힌다드페놀계 화합물 등이 포함된다. 가소제의 예에는 디부틸프탈레이트, 디옥틸프탈레이트, 인산 트리크레실 등이 포함된다. 충전재의 예에는 유리 섬유, 실리카, 마이카, 알루미나 등이 포함된다. 소포제나 레벨링제의 예에는 실리콘계, 불소계, 아크릴계의 화합물이 포함된다. 계면활성제의 예에는 불소계 계면활성제, 실리콘계 계면활성제 등이 포함된다. 커플링제의 예에는 3-(글리시딜옥시)프로필트리메톡시실란, 3-아크릴옥시프로필트리메톡시실란, 3-이소시아나토프로필트리에톡시실란, 3-우레이도프로필트리에톡시실란 등이 포함된다.The photosensitive resin composition of the present invention may contain additives such as a thermal polymerization inhibitor, an antioxidant, a plasticizer, a filler, a leveling agent, an antifoaming agent, a surfactant, a coupling agent, etc., as needed. Here, examples of the thermal polymerization inhibitor and the antioxidant include hydroquinone, hydroquinone monomethyl ether, pyrogallol, tert-butylcatechol, phenothiazine, hindered phenol compounds, etc. Examples of the plasticizer include dibutyl phthalate, dioctyl phthalate, tricresyl phosphate, etc. Examples of the filler include glass fiber, silica, mica, alumina, etc. Examples of the antifoaming agent or leveling agent include silicone-based, fluorine-based, and acrylic compounds. Examples of the surfactant include fluorine-based surfactants, silicone-based surfactants, etc. Examples of coupling agents include 3-(glycidyloxy)propyltrimethoxysilane, 3-acryloxypropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, and 3-ureidopropyltriethoxysilane.
본 발명의 경화막의 제조 방법은 내열온도가 140℃ 이하인 기판 상에 상술한 감광성 수지 조성물을 도포하고, 포토마스크를 통해 노광하고, 현상에 의해 미노광부를 제거하고, 140℃ 이하에서 가열해서 소정의 경화막 패턴을 형성하는 제조 방법이다.The method for manufacturing a cured film of the present invention is a manufacturing method comprising: applying the photosensitive resin composition described above on a substrate having a heat-resistant temperature of 140°C or lower, exposing through a photomask, removing an unexposed portion by development, and heating at 140°C or lower to form a predetermined cured film pattern.
본 발명의 경화막의 제조 방법에 사용하는 기판의 예에는 내열온도가 140℃ 이하인 PET(폴리에틸렌테레프탈레이트)나 PEN(폴리에틸렌나프탈레이트) 등의 수지제 필름(플라스틱 기판), 수지제 필름 상에 ITO나 금 등의 전극이 증착 또는 패터닝된 것도 기판 등이 포함된다. 여기에서, 「내열온도」란 기판 상에의 경화막의 패턴 형성 등의 가공 프로세스에 있어서 기판이 폭로되어도 변형 등의 문제가 발생하지 않는 온도인 것을 말한다. 또, 수지제 필름은 연신 처리의 정도에 의해서도 변화되지만, 적어도 유리전이온도(Tg)를 초과하지 않는 것이 필요해진다.Examples of the substrate used in the method for manufacturing a cured film of the present invention include a resin film (plastic substrate) such as PET (polyethylene terephthalate) or PEN (polyethylene naphthalate) having a heat-resistant temperature of 140°C or lower, a substrate on which an electrode such as ITO or gold is deposited or patterned on a resin film, and the like. Here, the "heat-resistant temperature" means a temperature at which problems such as deformation do not occur even if the substrate is exposed during a processing process such as pattern formation of a cured film on the substrate. In addition, the resin film changes depending on the degree of stretching treatment, but it is necessary that it does not exceed at least the glass transition temperature (Tg).
또한 본 발명의 경화막의 제조 방법에 사용하는 다른 기판의 예에는 유리 기판, 실리콘 웨이퍼 및 폴리이미드 필름 등과 같이 기판 자체의 내열성은 높지만 기판 상에 내열성이 낮은 박막 등을 형성한 것이 포함된다. 다른 기판의 구체예에는 유리, 실리콘 웨이퍼 또는 폴리이미드 필름 상에 유기 EL(OLED) 또는 유기 박막 트랜지스터(TFT)를 형성한 유기 디바이스 부착 기판 등이 포함된다. 또, 본 발명에서 대상으로 하는 내열성이 낮은 기판의 내열온도는 수지의 종류나 디바이스에 의해서도 다르지만, 80∼140℃인 것이 바람직하다. 또, 유기 디바이스 부착 기판에 대해서는 유기 디바이스 형성 후에 보호막, 보호 필름 등을 형성한 것도 포함한다. 이들 보호막, 보호 필름 자체의 내열성이 150℃ 이상이어도 유기 디바이스의 기능을 담보하기 위해서는 실질적으로 140℃ 이하의 내열성 밖에 없는 경우에는 유기 디바이스 부착 기판에 상당하기 때문이다.In addition, examples of other substrates used in the method for manufacturing a cured film of the present invention include those having high heat resistance of the substrate itself, such as a glass substrate, a silicon wafer, and a polyimide film, but having a thin film or the like having low heat resistance formed on the substrate. Specific examples of other substrates include an organic device attachment substrate having an organic EL (OLED) or an organic thin film transistor (TFT) formed on glass, a silicon wafer, or a polyimide film. In addition, the heat resistance temperature of the low heat resistance substrate targeted in the present invention varies depending on the type of resin or the device, but is preferably 80 to 140°C. In addition, the organic device attachment substrate also includes those having a protective film, protective film, or the like formed after forming the organic device. This is because, even if the heat resistance of these protective films or protective films themselves is 150°C or higher, in order to ensure the function of the organic device, if they have a heat resistance of practically only 140°C or lower, they are considered to be substrates with organic devices attached.
본 발명의 감광성 수지 조성물을 기판 상에 도포하는 방법은 공지의 용액 침지법, 스프레이법 외에, 롤러 코터기, 랜드 코터기, 슬릿 코터기나 스피너기를 사용하는 방법 등의 어느 방법이나 채용할 수 있다. 이들 방법에 의해, 소망의 두께로 도포한 후, 용제를 제거함(프리베이크)으로써, 피막이 형성된다. 프리베이크는 오븐, 핫플레이트 등에 의해 가열함으로써 행해진다. 프리베이크에 있어서의 가열온도 및 가열 시간은 사용하는 용제에 따라 적당하게 선택되고, 예를 들면 60∼110℃의 온도(기판의 내열온도를 초과하지 않도록 설정)에서 1∼3분간 행해진다.The method for applying the photosensitive resin composition of the present invention onto a substrate may be any method, such as a method using a roller coater, a land coater, a slit coater or a spinner, in addition to a known solution immersion method or spraying method. By these methods, after applying to a desired thickness, a film is formed by removing the solvent (prebaking). The prebaking is performed by heating using an oven, a hot plate or the like. The heating temperature and heating time in the prebaking are appropriately selected depending on the solvent used, and are performed, for example, at a temperature of 60 to 110°C (set so as not to exceed the heat-resistant temperature of the substrate) for 1 to 3 minutes.
프리베이크 후에 행해지는 노광은 자외선 노광 장치에 의해 행해지고, 포토마스크를 통해 노광함으로써 패턴에 대응한 부분의 레지스트만을 감광시킨다. 노광 장치 및 그 노광 조사 조건은 적당하게 선택되고, 초고압 수은등, 고압 수은 램프, 메탈할라이드 램프, 원자외선등 등의 광원을 이용하여 노광을 행하고, 도막 중의 감광성 수지 조성물을 광경화시킨다. 바람직하게는 파장 365nm의 광을 일정량 조사함으로써 광경화시킨다.The exposure performed after the prebake is performed by an ultraviolet exposure device, and by exposing through a photomask, only the resist in the portion corresponding to the pattern is exposed. The exposure device and its exposure irradiation conditions are appropriately selected, and exposure is performed using a light source such as an ultra-high pressure mercury lamp, a high pressure mercury lamp, a metal halide lamp, or a deep ultraviolet lamp, and the photosensitive resin composition in the coating is photocured. Preferably, photocuring is performed by irradiating a certain amount of light having a wavelength of 365 nm.
노광에 사용되는 방사선으로서는 예를 들면 가시광선, 자외선, 원자외선, 전자선, X선 등을 사용할 수 있지만, 방사선의 파장의 범위는 250∼450nm인 것이 바람직하다. 또한 이 알칼리 현상에 적합한 현상액으로서는 예를 들면 탄산나트륨, 탄산칼륨, 수산화칼륨, 디에탄올아민, 테트라메틸암모늄히드록시드 등의 수용액을 사용할 수 있다. 이들 현상액은 수지층의 특성에 맞춰서 적당하게 선택할 수 있지만, 필요에 따라 계면활성제를 첨가해도 좋다. 현상 온도는 20∼35℃인 것이 바람직하고, 시판의 현상기나 초음파 세정기 등을 이용하여 미세한 화상을 정밀하게 형성할 수 있다. 또, 알칼리 현상 후에는 통상, 수세된다. 현상 처리법으로서는 샤워 현상법, 스프레이 현상법, 딥(침지) 현상법, 퍼들(액침지) 현상법 등을 적용할 수 있다.As the radiation used for exposure, for example, visible light, ultraviolet rays, ultraviolet rays, electron rays, X-rays, etc. can be used, but the wavelength range of the radiation is preferably 250 to 450 nm. In addition, as a developer suitable for this alkaline development, for example, an aqueous solution of sodium carbonate, potassium carbonate, potassium hydroxide, diethanolamine, tetramethylammonium hydroxide, etc. can be used. These developers can be appropriately selected according to the characteristics of the resin layer, but a surfactant may be added as necessary. The development temperature is preferably 20 to 35°C, and a fine image can be precisely formed using a commercially available developer or ultrasonic cleaner. In addition, after alkaline development, it is usually washed with water. As a developing method, a shower developing method, a spray developing method, a dip developing method, a puddle developing method, etc. can be applied.
노광 후의 알칼리 현상은 노광되지 않는 부분의 레지스트를 제거할 목적으로 행해지고, 이 현상에 의해 소망의 패턴이 형성된다. 이 알칼리 현상에 적합한 현상액의 예에는 알칼리 금속이나 알칼리 토류 금속의 탄산염의 수용액, 알칼리 금속의 수산화물의 수용액 등이 포함된다. 특히, 탄산나트륨, 탄산칼륨, 탄산리튬 등의 탄산염을 0.05∼3질량% 함유하는 약알칼리성 수용액을 이용하여 23∼28℃의 온도에서 현상하는 것이 바람직하다. 또한 시판의 현상기나 초음파 세정기 등을 이용하여 미세한 화상을 정밀하게 형성할 수 있다.Alkaline development after exposure is performed for the purpose of removing the resist in the unexposed portion, and a desired pattern is formed by this development. Examples of developers suitable for this alkaline development include aqueous solutions of carbonates of alkali metals or alkaline earth metals, aqueous solutions of hydroxides of alkali metals, etc. In particular, it is preferable to perform development at a temperature of 23 to 28°C using a weakly alkaline aqueous solution containing 0.05 to 3 mass% of a carbonate such as sodium carbonate, potassium carbonate, or lithium carbonate. In addition, a fine image can be precisely formed using a commercially available developer or ultrasonic cleaner.
현상 후, 80∼140℃의 온도(기판의 내열온도를 초과하지 않도록 설정) 및 20∼90분의 조건으로 열처리(포스트 베이크)가 행해지는 것이 바람직하고, 온도 90∼120℃, 가열 시간 30∼60분의 조건으로 행해지는 것이 보다 바람직하다. 상기 포스트 베이크은 패터닝된 경화막과 기판의 밀착성을 높이기 위해서 등의 목적으로 행해진다. 이것은 프리베이크와 마찬가지로, 오븐, 핫플레이트 등에 의해 가열함으로써 행해진다. 본 발명의 패터닝된 경화막은 이상의 포토리소그래피법에 의한 각 공정을 거쳐 형성된다.After development, it is preferable to perform heat treatment (post-bake) under the conditions of a temperature of 80 to 140°C (set so as not to exceed the heat-resistant temperature of the substrate) and a time of 20 to 90 minutes, and it is more preferable to perform it under the conditions of a temperature of 90 to 120°C and a heating time of 30 to 60 minutes. The above-mentioned post-bake is performed for the purpose of increasing the adhesion between the patterned cured film and the substrate. This is performed by heating with an oven, a hot plate, or the like, similar to the pre-bake. The patterned cured film of the present invention is formed through each process by the above photolithography method.
(실시예)(Example)
이하, 실시예 및 비교예에 의거하여 본 발명의 실시형태를 구체적으로 설명하지만, 본 발명은 이들에 한정되는 것은 아니다.Hereinafter, embodiments of the present invention will be specifically described based on examples and comparative examples, but the present invention is not limited to these.
우선, 일반식(1)로 나타내어지는 불포화기 함유 알칼리 가용성 수지의 합성예로부터 설명하지만, 이들 합성예에 있어서의 수지의 평가는 언급이 없는 한 이하와 같이 행했다.First, the following explains the synthesis examples of unsaturated group-containing alkali-soluble resins represented by general formula (1). The evaluation of the resins in these synthesis examples was performed as follows unless otherwise stated.
[고형분 농도][Solid content concentration]
합성예 중에서 얻어진 수지용액 1g을 유리 필터〔중량:W0(g)〕에 함침시켜서 칭량하고〔W1(g)〕, 160℃에서 2시간 가열한 후의 중량〔W2(g)〕으로부터 다음식으로부터 구했다.Among the synthetic examples, 1 g of the resin solution obtained was impregnated into a glass filter [weight: W 0 (g)] and weighed [W 1 (g)], and the weight after heating at 160°C for 2 hours [W 2 (g)] was obtained from the following formula.
고형분 농도(중량%)=100×(W2-W0)/(W1-W0)Solid concentration (weight %) = 100 × (W 2 -W 0 ) / (W 1 -W 0 )
[에폭시 당량][Epoxy Equivalent]
수지용액을 디옥산에 용해시킨 후에 브롬화 테트라에틸암모늄의 아세트산 용액을 첨가하고, 전위차 적정 장치 「COM-1600」(히라누마 산교 가부시키가이샤제)을 이용하여 1/10N-과염소산 용액으로 적정해서 구했다.After dissolving the resin solution in dioxane, an acetic acid solution of tetraethylammonium bromide was added, and titration was performed with a 1/10 N perchloric acid solution using a potentiometric titration device “COM-1600” (produced by Hiranuma Sangyo Co., Ltd.) to obtain the value.
[산가][Sanga]
수지용액을 디옥산에 용해시켜서 전위차 적정 장치 「COM-1600」(히라누마 산교 가부시키가이샤제)을 이용하여 1/10N-KOH 수용액으로 적정해서 구했다.The resin solution was dissolved in dioxane and titrated with a 1/10N-KOH aqueous solution using a potentiometric titration device “COM-1600” (produced by Hiranuma Sangyo Co., Ltd.).
[분자량][Molecular weight]
겔퍼미에이션 크로마토그래피(GPC)「HLC-8220GPC」(토소 가부시키가이샤제, 용매:테트라히드로푸란, 컬럼:TSKgelSuperH-2000(2개)+TSKgelSuperH-3000(1개)+TSKgelSuperH-4000(1개)+TSKgelSuperH-5000(1개)(토소 가부시키가이샤제), 온도:40℃, 속도:0.6ml/min)로 측정하고, 표준 폴리스티렌(토소 가부시키가이샤제, PS-올리고머 키트) 환산값으로서 중량 평균 분자량(Mw)을 구했다.Gel permeation chromatography (GPC) "HLC-8220GPC" (Tosoh Corporation, solvent: tetrahydrofuran, column: TSKgel SuperH-2000 (2) + TSKgel SuperH-3000 (1) + TSKgel SuperH-4000 (1) + TSKgel SuperH-5000 (1) (Tosoh Corporation), temperature: 40°C, speed: 0.6 ml/min) was measured, and the weight average molecular weight (Mw) was obtained as a value converted to standard polystyrene (Tosoh Corporation, PS-oligomer kit).
[몰 흡광계수][Molecular absorption coefficient]
아실옥심계 광중합 개시제의 몰 흡광계수는 자외 가시 근적외 분광 광도계「UH4150」(가부시키가이샤 히타치 하이테크 사이언스제)를 이용하여 측정했다.The molar absorption coefficient of the acyl oxime photopolymerization initiator was measured using an ultraviolet-visible-near-infrared spectrophotometer “UH4150” (manufactured by Hitachi High-Tech Science Co., Ltd.).
[평균 입자지름][Average particle diameter]
실리카 입자의 평균 입자지름은 동적 광산란법의 입도 분포계 「입경 애널라이저 FPAR-1000」(오츠카 덴시 가부시키가이샤제)을 사용하고, 쿰란트법에 의해 측정했다.The average particle diameter of silica particles was measured using a particle size distribution meter “Particle Size Analyzer FPAR-1000” (manufactured by Otsuka Electronics Co., Ltd.) of dynamic light scattering method and the Qumrant method.
또한 합성예 및 비교 합성예에서 사용하는 약호는 다음과 같다.Additionally, the abbreviations used in the synthetic examples and comparative synthetic examples are as follows.
DCPMA: 디시클로펜타닐메타크릴레이트 DCPMA: Dicyclopentanyl methacrylate
GMA: 글리시딜메타크릴레이트 GMA: Glycidyl Methacrylate
St: 스티렌 St: Styrene
AA: 아크릴산 AA: Acrylic acid
SA: 무수 숙신산 SA: Anhydrous succinic acid
BPFE: 비스페놀플루오렌형 에폭시 화합물(9,9-비스(4-히드록시페닐)플루오렌과 클로로메틸옥시란의 반응물) BPFE: Bisphenol fluorene type epoxy compound (reaction product of 9,9-bis(4-hydroxyphenyl)fluorene and chloromethyloxirane)
BPDA: 3,3',4,4'-비페닐테트라카르복실산 2무수물 BPDA: 3,3',4,4'-Biphenyltetracarboxylic dianhydride
THPA: 테트라히드로 무수 프탈산 THPA: Tetrahydrophthalic anhydride
DPHA: 디펜타에리스리톨펜타아크릴레이트와 헥사아크릴레이트의 혼합물DPHA: A mixture of dipentaerythritol pentaacrylate and hexaacrylate
AIBN: 아조비스이소부틸로니트릴 AIBN: Azobisisobutyronitrile
TDMAMP:트리스디메틸아미노메틸페놀 TDMAMP: Trisdimethylaminomethylphenol
HQ: 히드로퀴논 HQ: Hydroquinone
TEA: 트리에틸아민 TEA: Triethylamine
TEAB: 브롬화 테트라에틸암모늄 TEAB: Tetraethylammonium bromide
PGMEA: 프로필렌글리콜모노메틸에테르아세테이트PGMEA: Propylene glycol monomethyl ether acetate
[합성예 1][Synthesis Example 1]
환류 냉각기 부착 1L의 4구 플라스크 중에 PGMEA(300g)를 넣고, 플라스크계내를 질소 치환한 후 120℃로 승온했다. 이 플라스크 중에 모노머 혼합물(DCPMA(77.1g, 0.35몰), GMA(49.8g, 0.35몰), St(31.2g, 0.30몰))에 AIBN(10g)을 용해한 혼합물을 적하 로트로부터 2시간에 걸쳐서 적하하고, 또한 120℃에서 2시간 교반하고, 공중합체 용액을 얻었다.PGMEA (300 g) was placed in a 1 L four-necked flask equipped with a reflux condenser, the inside of the flask was replaced with nitrogen, and the temperature was raised to 120°C. A mixture of AIBN (10 g) dissolved in a monomer mixture (DCPMA (77.1 g, 0.35 mol), GMA (49.8 g, 0.35 mol), St (31.2 g, 0.30 mol)) was added dropwise from a dropping funnel to the flask over 2 hours, and the mixture was stirred at 120°C for 2 hours to obtain a copolymer solution.
이어서, 플라스크계내를 공기로 치환한 후, 얻어진 공중합체 용액에 AA(24.0g, 글리시딜기의 95%), TDMAMP(0.8g) 및 HQ(0.15g)를 첨가하고, 120℃에서 6시간 교반하고, 중합성 불포화기 함유 공중합체 용액을 얻었다. 얻어진 중합성 불포화기 함유 공중합체 용액에 SA(30.0g, AA 첨가 몰수의 90%), TEA(0.5g)를 첨가하고 120℃에서 4시간 반응시켜서 불포화기 함유 알칼리 가용성 수지(A)-1을 얻었다. 수지용액의 고형분 농도는 46.0질량%이며, 산가(고형분 환산)는 76mgKOH/g이며, GPC분석에 의한 Mw는 5300이었다.Next, after replacing the inside of the flask with air, AA (24.0 g, 95% of glycidyl groups), TDMAMP (0.8 g), and HQ (0.15 g) were added to the obtained copolymer solution, and the mixture was stirred at 120°C for 6 hours to obtain a polymerizable unsaturated group-containing copolymer solution. SA (30.0 g, 90% of the mole number of AA added) and TEA (0.5 g) were added to the obtained polymerizable unsaturated group-containing copolymer solution, and the mixture was reacted at 120°C for 4 hours to obtain an unsaturated group-containing alkali-soluble resin (A)-1. The solid content concentration of the resin solution was 46.0 mass%, the acid value (converted to solid content) was 76 mgKOH/g, and the Mw by GPC analysis was 5300.
[합성예 2][Synthesis Example 2]
환류 냉각기 부착 500ml 4구 플라스크 중에 BPFE(114.4g, 0.23몰), AA(33.2g, 0.46몰), PGMEA(157g) 및 TEAB(0.48g)를 투입하고, 100∼105℃에서 20시간 교반해서 반응시켰다. 이어서, 플라스크내에 BPDA(35.3g, 0.12몰), THPA(18.3g, 0.12몰)를 투입하고, 120∼125℃에서 6시간 교반하고, 불포화기 함유 알칼리 가용성 수지(A)-2를 얻었다. 얻어진 수지용액의 고형분 농도는 56.1질량%이며, 산가(고형분 환산)는 103mgKOH/g이며, GPC분석에 의한 Mw는 3600이었다.BPFE (114.4 g, 0.23 mol), AA (33.2 g, 0.46 mol), PGMEA (157 g), and TEAB (0.48 g) were charged into a 500 ml 4-necked flask equipped with a reflux condenser, and stirred at 100 to 105°C for 20 hours to react. Next, BPDA (35.3 g, 0.12 mol) and THPA (18.3 g, 0.12 mol) were charged into the flask, and stirred at 120 to 125°C for 6 hours to obtain an unsaturated group-containing alkali-soluble resin (A)-2. The solid content concentration of the obtained resin solution was 56.1 mass%, the acid value (converted to solid content) was 103 mgKOH/g, and the Mw by GPC analysis was 3600.
상기 배합 성분을 표 1∼5에 나타내는 비율로 배합해서 실시예 1∼30 및 비교예 1∼18의 감광성 수지 조성물을 조제했다. 또, 표 1∼5의 수치는 전부 질량부를 나타낸다.The photosensitive resin compositions of Examples 1 to 30 and Comparative Examples 1 to 18 were prepared by mixing the above-mentioned mixing components in the ratios shown in Tables 1 to 5. Also, all numerical values in Tables 1 to 5 represent parts by mass.
(불포화기 함유 알칼리 가용성 수지) (unsaturated alkaline soluble resin)
(A)-1:상기 합성예 1에서 얻어진 수지용액(고형분 농도 46.0질량%) (A)-1: Resin solution obtained in the above synthesis example 1 (solid content concentration 46.0 mass%)
(A)-2:상기 합성예 2에서 얻어진 수지용액(고형분 농도 56.1질량%) (A)-2: Resin solution obtained in the above synthesis example 2 (solid content concentration 56.1 mass%)
또, 표 1∼5에 있어서는 중합성 불포화기 함유 알칼리 가용성 수지를 수지로서 기재하고 있다.In addition, in Tables 1 to 5, an alkali-soluble resin containing a polymerizable unsaturated group is described as the resin.
(광중합성 모노머)(photopolymerizable monomer)
(B): 디펜타에리스리톨펜타아크릴레이트와 헥사아크릴레이트의 혼합물(DPHA(아크릴 당량 96∼115), 니폰 카야쿠 가부시키가이샤제)(B): A mixture of dipentaerythritol pentaacrylate and hexaacrylate (DPHA (acrylic equivalent 96-115), manufactured by Nippon Kayaku Co., Ltd.)
(에폭시 화합물)(epoxy compound)
(C)-1: 트리페닐메탄형 에폭시 수지(EPPN-501H, 에폭시 당량 160, 니폰 카야쿠 가부시키가이샤제)(C)-1: Triphenylmethane type epoxy resin (EPPN-501H, epoxy equivalent 160, manufactured by Nippon Kayaku Co., Ltd.)
(C)-2: 2,2-비스(히드록시메틸)-1-부탄올의 1,2-에폭시-4-(2-옥시라닐)시클로헥산 부가물(EHPE3150(에폭시 당량 180), 가부시키가이샤 다이셀제)(C)-2: 1,2-epoxy-4-(2-oxiranyl)cyclohexane adduct of 2,2-bis(hydroxymethyl)-1-butanol (EHPE3150 (epoxy equivalent 180), manufactured by Daicel Corporation)
(C)-3: 3',4'-에폭시시클로헥실메틸 3',4'-에폭시시클로헥산카르복실레이트(셀록사이드 2021P, 에폭시 당량 130, 가부시키가이샤 다이셀제)(C)-3: 3',4'-epoxycyclohexylmethyl 3',4'-epoxycyclohexanecarboxylate (Celoxide 2021P, epoxy equivalent 130, manufactured by Daicel Corporation)
(C)-4: HiREM-1(에폭시 당량 113, 시코쿠 카세이 고교제)(C)-4: HiREM-1 (Epoxy equivalent 113, Shikoku Kasei High School)
(C)-5: 부탄테트라카르복실산 테트라(3,4-에폭시시클로헥실메틸) 수식 ε-카프로락톤(에폭시 당량 197, 가부시키가이샤 다이셀제)(C)-5: Butanetetracarboxylic acid tetra(3,4-epoxycyclohexylmethyl) formula ε-caprolactone (epoxy equivalent 197, manufactured by Daicel Corporation)
(경화제)(hardener)
(D)-1: 디시안디아미드(DICY7, 미츠비시 케미칼 가부시키가이샤제)(D)-1: Dicyandiamide (DICY7, manufactured by Mitsubishi Chemical Co., Ltd.)
(D)-2: 무수 트리멜리트산(D)-2: Trimellitic anhydride
(광중합 개시제)(photopolymerization initiator)
(E)-1: 옥심에스테르계 광중합 개시제(아데카아크루즈 NCI-831, 가부시키가이샤 ADEKA제, 「아데카아크루즈」는 동사의 등록상표)(E)-1: Oxime ester photopolymerization initiator (ADEKA ACRUSE NCI-831, manufactured by ADEKA Co., Ltd., “ADEKA ACRUSE” is a registered trademark of the company)
(E)-2: 펜타에리스리톨테트라키스(3-메르캅토프로피오네이트)(E)-2: Pentaerythritol tetrakis(3-mercaptopropionate)
(용제)(solvent)
(F)-1: 프로필렌글리콜모노메틸에테르아세테이트(PGMEA)(F)-1: Propylene glycol monomethyl ether acetate (PGMEA)
(F)-2: 디에틸렌글리콜에틸메틸에테르(EDM)(F)-2: Diethylene glycol ethyl methyl ether (EDM)
(경화 촉진제)(curing accelerator)
(G): 1,2-디메틸이미다졸을 2.0질량% 함유하는 PGMEA용액(G): PGMEA solution containing 2.0 mass% of 1,2-dimethylimidazole
(착색재)(coloring material)
(H)-1: 수지 피복 카본블랙 25.0질량%, 고분자 분산제 5.0질량%의 PGMEA용제의 안료 분산체(고형분 농도 30.0질량%)(H)-1: Pigment dispersion of PGMEA solvent containing 25.0 mass% of resin-coated carbon black and 5.0 mass% of polymer dispersant (solid content 30.0 mass%)
(H)-2: 카본블랙 25.0질량%, 고분자 분산제 2.0질량%, 분산 수지(합성예 2의 불포화기 함유 알칼리 가용성 수지(A)-2) 8.0질량%의 PGMEA용제의 안료 분산체(고형분 농도 35.0질량%)(H)-2: Pigment dispersion (solid content concentration 35.0 mass%) in PGMEA solvent containing 25.0 mass% of carbon black, 2.0 mass% of polymer dispersant, and 8.0 mass% of dispersion resin (unsaturated group-containing alkali-soluble resin (A)-2 of Synthesis Example 2)
(실리카 입자)(silica particles)
(I)-1: 실리카 PGMEA 분산액 「YA010C」(가부시키가이샤 아도마텍스제, 고형분 농도 20질량%, 평균 입자지름 10nm)(I)-1: Silica PGMEA dispersion “YA010C” (manufactured by Admatex Co., Ltd., solid content concentration 20 mass%, average particle diameter 10 nm)
(I)-2: 실리카 PGMEA 분산액 「YA050C」(가부시키가이샤 아도마텍스제, 고형분 농도 40질량%, 평균 입자지름 50nm)(I)-2: Silica PGMEA dispersion “YA050C” (manufactured by Admatex Co., Ltd., solid content concentration 40 mass%, average particle diameter 50 nm)
(I)-3: 실리카 PGMEA 분산액 「YC100C」(가부시키가이샤 아도마텍스제, 고형분 농도 50질량%, 평균 입자지름 100nm)(I)-3: Silica PGMEA dispersion “YC100C” (manufactured by Admatex Co., Ltd., solid content concentration 50 mass%, average particle diameter 100 nm)
(I)-4: 중공 실리카 이소프로판올 분산액(닛키 쇼쿠바이 카세이 가부시키가이샤제, 고형분 농도 20질량%, 평균 입자지름, 75nm, 공극률 46체적%)(I)-4: Hollow silica isopropanol dispersion (manufactured by Nikki Shokubai Kasei Co., Ltd., solid content concentration 20 mass%, average particle diameter 75 nm, void ratio 46 volume%)
(계면활성제)(Surfactant)
(J): 메가팩 F-475(DIC 가부시키가이샤제, 「메가팩」은 동사의 등록상표)(J): Mega Pack F-475 (manufactured by DIC Corporation, “Mega Pack” is a registered trademark of the company)
[평가][evaluation]
실시예 1∼30, 비교예 1∼18의 감광성 수지 조성물을 경화해서 이루어지는 경화막(도막)을 이용하여 이하의 평가를 행했다. 평가 결과를 표 6∼10에 나타낸다.The following evaluations were conducted using cured films (coatings) formed by curing the photosensitive resin compositions of Examples 1 to 30 and Comparative Examples 1 to 18. The evaluation results are shown in Tables 6 to 10.
(현상 특성 평가용 경화막(도막)의 제작)(Production of cured film (coating film) for evaluating phenomenon characteristics)
표 1∼5에 나타낸 감광성 수지 조성물을 미리 저압 수은등으로 파장 254nm의 조도 1000mJ/㎠의 자외선을 조사해서 표면을 세정한 125mm×125mm의 유리 기판 「#1737」(코닝사제)(이하 「유리 기판」이라고 한다) 상에 가열 경화 처리 후의 막두께가 1.2㎛가 되도록 스핀 코터를 이용하여 도포하고, 핫플레이트를 이용하여 90℃에서 1분간 프리베이크를 해서 경화막(도막)을 제작했다. 이어서, 노광 갭을 100㎛로 조정하고, 상기 경화막(도막) 상에 라인/스페이스=10㎛/50㎛의 네거티브형 포토마스크를 씌우고, i선 조도 30mW/㎠의 초고압 수은 램프로 80mJ/㎠의 자외선을 조사해서 감광 부분의 광경화 반응을 행했다.The photosensitive resin compositions shown in Tables 1 to 5 were applied using a spin coater on a 125 mm × 125 mm glass substrate "#1737" (Corning Corp.) (hereinafter referred to as the "glass substrate") whose surface had been cleaned by irradiating it with ultraviolet rays having a wavelength of 254 nm and an intensity of 1000 mJ/cm2 with a low-pressure mercury lamp in advance, so that the film thickness after heat-curing became 1.2 μm, and a hot plate was used to perform prebaking at 90°C for 1 minute to produce a cured film (coating). Next, the exposure gap was adjusted to 100 μm, and a negative photomask with line/space = 10 μm/50 μm was placed on the cured film (coating), and 80 mJ/cm2 of ultraviolet rays were irradiated with an ultra-high-pressure mercury lamp with an i-line intensity of 30 mW/cm2 to perform a photocuring reaction of the photosensitive portion.
이어서, 노광한 상기 경화막(도막)을 25℃, 0.04% 수산화칼륨 용액에 의해 1kgf/㎠의 샤워압으로 패턴이 드러나기 시작하는 현상 시간(브레이크 타임=BT)부터 10초 및 20초의 현상 처리를 행한 후, 5kgf/㎠의 스프레이 수세를 행하고, 상기 경화막(도막)의 미노광 부분을 제거해서 유리 기판 상에 경화막 패턴을 형성하고, 열풍 건조기를 이용하여 100℃에서 60분간, 본 경화(포스트 베이크)하고, 실시예 1∼30, 비교예 1∼18에 따른 경화막 부착 기판을 얻었다.Next, the exposed cured film (coating) was developed for 10 seconds and 20 seconds from the development time (break time = BT) at which the pattern begins to appear using a 0.04% potassium hydroxide solution at 25°C with a shower pressure of 1 kgf/cm2, and then spray washing was performed at 5 kgf/cm2, and the unexposed portion of the cured film (coating) was removed to form a cured film pattern on a glass substrate, and main curing (post-baking) was performed at 100°C for 60 minutes using a hot air dryer, thereby obtaining substrates with cured films attached thereto according to Examples 1 to 30 and Comparative Examples 1 to 18.
[현상 특성 평가] [Phenomena Characteristics Evaluation]
(패턴 선폭) (pattern line width)
(평가 방법)(Evaluation method)
본 경화(포스트 베이크) 후의 패턴 선폭을 측장 현미경 「XD-20」(가부시키가이샤 니콘제)을 이용하여 마스크 폭 10㎛의 패턴 선폭을 측정했다. 또, 패턴 선폭의 평가는 BT+10초의 경우와 BT+20초의 경우에서 행했다.The pattern line width after the main curing (post-bake) was measured using a measuring microscope “XD-20” (manufactured by Nikon Co., Ltd.) for a pattern line width of 10 μm for a mask width. In addition, the pattern line width was evaluated for BT+10 seconds and BT+20 seconds.
(평가 기준) (evaluation criteria)
○: 패턴 선폭이 10±2㎛의 범위내이다 ○: The pattern line width is within the range of 10±2㎛.
×: 패턴 선폭이 10±2㎛의 범위외이다.×: The pattern line width is outside the range of 10±2㎛.
(패턴 직선성) (pattern linearity)
(평가 방법)(Evaluation method)
본 경화(포스트 베이크)의 10㎛ 마스크 패턴을 광학 현미경을 이용하여 관찰했다. 또, 패턴 직선성의 평가는 BT+10초의 경우와 BT+20초의 경우에서 행했다. 또, △ 이상을 합격으로 했다.The 10㎛ mask pattern of the main curing (post-bake) was observed using an optical microscope. In addition, the pattern linearity was evaluated in the case of BT+10 seconds and BT+20 seconds. In addition, △ or higher was considered as passing.
(평가 기준) (evaluation criteria)
○: 패턴 에지 부분의 거칠음이 확인되지 않는다 ○: No roughness is observed at the pattern edge.
△: 패턴 에지 부분의 거칠음이 일부에 확인된다△: Roughness is observed in some areas of the pattern edge.
×: 패턴 에지 부분의 거칠음이 전체에 걸쳐 확인된다.×: Roughness is observed throughout the pattern edge portion.
(패턴 밀착성) (pattern adhesion)
(평가 방법)(Evaluation method)
본 경화(포스트 베이크) 후의 10㎛ 마스크 패턴을 광학 현미경을 이용하여 관찰했다. 또, 패턴 밀착성의 평가는 BT+20초의 현상 조건으로 행하고, △ 이상을 합격으로 했다.The 10 μm mask pattern after main curing (post-bake) was observed using an optical microscope. In addition, the pattern adhesion was evaluated under the development condition of BT+20 seconds, and △ or higher was considered as passing.
(평가 기준) (evaluation criteria)
○: 패턴에 박리가 보여지지 않는다 ○: No peeling is visible in the pattern
△: 패턴의 극히 일부에 박리가 보여진다 △: Peeling is visible in a very small part of the pattern.
×: 패턴의 대부분이 박리되어 있다×: Most of the pattern is peeled off
(광학농도(OD) 평가용 경화막(도막)의 제작)(Production of cured film (coating) for optical density (OD) evaluation)
표 1∼5에 나타낸 감광성 수지 조성물을 미리 저압 수은등으로 파장 254nm의 조도 1000mJ/㎠의 자외선을 조사해서 표면을 세정한 125mm×125mm의 유리 기판 「#1737」(코닝사제)(이하 「유리 기판」이라고 한다) 상에 가열 경화 처리 후의 막두께가 1.2㎛가 되도록 스핀 코터를 이용하여 도포하고, 핫플레이트를 이용하여 90℃에서 1분간 프리베이크를 해서 경화막(도막)을 제작했다. 이어서, 노광 갭을 100㎛로 조정하고, 상기 경화막(도막) 상에 라인/스페이스=10㎛/ 50㎛의 네거티브형 포토마스크를 씌우고, i선 조도 30mW/㎠의 초고압 수은 램프로 80mJ/㎠의 자외선을 조사하고, 감광 부분의 광경화 반응을 행했다.The photosensitive resin compositions shown in Tables 1 to 5 were applied using a spin coater on a 125 mm × 125 mm glass substrate "#1737" (Corning Corp.) (hereinafter referred to as the "glass substrate") whose surface had been cleaned by irradiating it with ultraviolet rays having a wavelength of 254 nm and an intensity of 1000 mJ/cm2 with a low-pressure mercury lamp in advance, so that the film thickness after heat-curing became 1.2 μm, and a hot plate was used to perform prebaking at 90°C for 1 minute to produce a cured film (coating). Next, the exposure gap was adjusted to 100 μm, and a negative photomask with line/space = 10 μm/50 μm was placed on the cured film (coating), and 80 mJ/cm2 of ultraviolet rays were irradiated with an ultra-high-pressure mercury lamp with an i-line intensity of 30 mW/cm2, so as to perform a photocuring reaction of the photosensitive portion.
이어서, 노광한 상기 경화막(도막)을 25℃, 0.04% 수산화칼륨 용액에 의해 1kgf/㎠의 샤워압으로 패턴이 드러나기 시작하는 현상 시간(브레이크 타임=BT)부터 20초의 현상 처리를 행한 후, 5kgf/㎠의 스프레이 수세를 행하고, 상기 경화막(도막)의 미노광 부분을 제거해서 유리 기판 상에 경화막 패턴을 형성하고, 열풍 건조기를 이용하여 100℃에서 60분간, 본 경화(포스트 베이크)하고, 실시예 1∼30, 비교예 1∼18에 따른 경화막 부착 기판을 얻었다.Next, the exposed cured film (coating) was developed for 20 seconds from the development time (break time = BT) at which the pattern begins to appear with a shower pressure of 1 kgf/cm2 using a 0.04% potassium hydroxide solution at 25°C, and then spray-rinsed at 5 kgf/cm2 to remove the unexposed portion of the cured film (coating) to form a cured film pattern on a glass substrate, and a hot air dryer was used to perform main curing (post-bake) at 100°C for 60 minutes to obtain a substrate having a cured film attached thereto according to Examples 1 to 30 and Comparative Examples 1 to 18.
[광학농도 평가] [Optical density evaluation]
(평가 방법)(Evaluation method)
멕베스 투과 농도계를 이용하여 제작한 경화막(도막)의 광학농도(OD)를 평가했다. 또한 기판에 형성한 경화막(도막)의 막두께를 측정하고, 광학농도(OD)의 값을 막두께로 나눈 값을 OD/㎛로 했다.The optical density (OD) of the cured film (coating) produced was evaluated using a Macbeth transmission densitometer. In addition, the film thickness of the cured film (coating) formed on the substrate was measured, and the value of the optical density (OD) divided by the film thickness was defined as OD/㎛.
광학농도(OD)는 다음의 수식(1)으로 산출했다.Optical density (OD) was calculated using the following formula (1).
광학농도(OD)=-log10T(1)Optical density (OD) = -log 10 T (1)
(T는 투과율을 나타낸다)(T represents transmittance)
[내용제성 평가] [Content Evaluation]
(평가 방법)(Evaluation method)
광학농도(OD) 평가용과 마찬가지로 해서 제작한 경화막(도막)의 표면을 PGMEA에 침지한 기름걸레(waste)로 연속해서 20왕복 문질렀다. 또, △ 이상을 합격으로 했다.As in the case of optical density (OD) evaluation, the surface of the cured film (coating) produced was rubbed repeatedly 20 times with an oily rag (waste) immersed in PGMEA. Also, △ or higher was considered as passing.
(평가 기준) (evaluation criteria)
○: 경화막(도막)의 표면에 용해가 보여지지 않고, 상처도 생기지 않았다○: No dissolution was observed on the surface of the cured film (coat), and no scratches were formed.
△: 경화막(도막)의 표면의 극히 일부에 용해가 보여지고, 극히 일부에 상처도 생겼다△: Dissolution is observed in a very small portion of the surface of the cured film (coat), and scratches are also observed in a very small portion.
×: 경화막(도막)의 표면이 연화되어 있고, 대부분에 상처가 생겼다×: The surface of the cured film (coating) is softened and most of it is scratched.
[경시에 의한 패턴 선폭 변화의 평가] [Evaluation of pattern line width changes due to aging]
(평가 방법)(Evaluation method)
실시예 1∼4, 6, 8, 10, 12, 14, 16∼30, 비교예 1∼4, 6, 8, 17, 18의 감광성 수지 조성물에 대해서 5℃에서 1개월 보관한 후, 현상 특성 평가용과 동일하게 해서 평가용 기판을 제작하고, 패턴 선폭 평가와 동일한 방법으로 패턴 선폭을 측정했다. 경시에 의한 패턴 선폭 변화의 평가는 BT+20초의 현상 조건으로 행했다. 또, △ 이상을 합격으로 했다.For the photosensitive resin compositions of Examples 1 to 4, 6, 8, 10, 12, 14, 16 to 30 and Comparative Examples 1 to 4, 6, 8, 17, and 18, after storing them at 5°C for 1 month, an evaluation substrate was produced in the same manner as for the development characteristic evaluation, and the pattern linewidth was measured in the same manner as for the pattern linewidth evaluation. The evaluation of the change in the pattern linewidth over time was performed under the development condition of BT+20 seconds. In addition, △ or higher was considered as passing.
(평가 기준) (evaluation criteria)
○: 감광성 수지 조성물의 제조 직후와 비교해서 선폭의 변화율이 5% 이내이다 ○: The change rate of line width is within 5% compared to immediately after the photosensitive resin composition is manufactured.
△: 감광성 수지 조성물의 제조 직후와 비교해서 선폭의 변화율이 5∼20%이다 △: The change rate of line width is 5 to 20% compared to immediately after the photosensitive resin composition is manufactured.
×: 감광성 수지 조성물의 제조 직후와 비교해서 선폭의 변화율이 20% 이상이다×: The change rate of line width is 20% or more compared to immediately after the photosensitive resin composition is manufactured.
(반사율 평가용 경화막(도막)의 제작)(Production of cured film (coating) for reflectivity evaluation)
표 1∼5에 나타낸 감광성 수지 조성물을 미리 저압 수은등으로 파장 254nm의 조도 1000mJ/㎠의 자외선을 조사해서 표면을 세정한 125mm×125mm의 유리 기판 「#1737」(코닝사제)(이하 「유리 기판」이라고 한다) 상에 가열 경화 처리 후의 막두께가 1.2㎛가 되도록 스핀 코터를 이용하여 도포하고, 핫플레이트를 이용하여 85℃에서 1분간 프리베이크를 해서 경화막(도막)을 제작했다. 이어서, 열풍 건조기를 이용하여 100℃에서 60분간, 본 경화(포스트 베이크)하고, 실시예 5∼30, 비교예 5∼18에 따른 경화막 부착 기판을 얻었다.The photosensitive resin compositions shown in Tables 1 to 5 were applied using a spin coater on a 125 mm × 125 mm glass substrate "#1737" (Corning Corp.) (hereinafter referred to as "glass substrate") whose surface had been cleaned by irradiating it with ultraviolet rays having a wavelength of 254 nm and an intensity of 1000 mJ/cm2 with a low-pressure mercury lamp in advance, so that the film thickness after heat-curing became 1.2 ㎛, and a hot plate was used for prebaking at 85°C for 1 minute to produce a cured film (coating). Subsequently, a hot air dryer was used for main curing (post-baking) at 100°C for 60 minutes, to obtain substrates with cured films according to Examples 5 to 30 and Comparative Examples 5 to 18.
[반사율 평가] [Reflectivity Evaluation]
(평가 방법)(Evaluation method)
제작한 경화막(도막) 부착 기판에 대해서 자외 가시 근적외 분광 광도 「UH4150」(가부시키가이샤 히타치 하이테크 사이언스제)을 이용하여 입사각 2°에서 경화막(도막)측의 반사율을 측정했다.The reflectance on the cured film (coating) side of the substrate to which the produced cured film (coating) was attached was measured at an incident angle of 2° using an ultraviolet-visible-near-infrared spectrophotometer “UH4150” (manufactured by Hitachi High-Tech Science Co., Ltd.).
실시예 5∼12, 17∼30의 평가 결과로부터 (H)성분인 착색재의 함유량을 감광성 수지 조성물 중의 고형분에 대해서 20∼80질량%로 함으로써, 차광성을 충분히 얻을 수 있음과 아울러, 소망하는 현상 특성(패턴 선폭, 패턴 직선성)을 얻을 수 있는 것을 알 수 있었다. 이것은 본래의 바인더가 되는 감광성 수지의 함유량이 현상 특성, 특히 패턴의 직선성을 적정하게 하기에 충분한 양이 되기 때문이라고 생각된다.From the evaluation results of Examples 5 to 12 and 17 to 30, it was found that by setting the content of the coloring material, which is the (H) component, to 20 to 80 mass% based on the solid content in the photosensitive resin composition, sufficient light-shielding properties can be obtained, and at the same time, desired development characteristics (pattern line width, pattern linearity) can be obtained. This is thought to be because the content of the photosensitive resin, which is the original binder, is sufficient to appropriately achieve development characteristics, particularly pattern linearity.
실시예 1∼30 및 비교예 1∼16의 평가 결과로부터 전체 고형분 중에 있어서의 (C)성분과 (D)성분의 질량의 합계를 고형분의 전체 질량에 대해서 6∼24질량% 로 함으로써, 내용제성이 우수한 경화막(도막)이 얻어지는 것을 알 수 있었다. 이것은 (C)성분과 (D)성분의 질량의 합계가 5질량% 이상이면 내용제성을 확보할 수 있고, 25질량% 이하이면 패턴의 밀착성을 충분히 확보할 수 있으므로, 현상에 의한 패턴 형성을 적정하게 행할 수 있기 때문이라고 생각된다.From the evaluation results of Examples 1 to 30 and Comparative Examples 1 to 16, it was found that a cured film (coating) having excellent solvent resistance was obtained by setting the total mass of the (C) component and the (D) component in the total solid content to 6 to 24 mass% with respect to the total mass of the solid content. This is thought to be because when the total mass of the (C) component and the (D) component is 5 mass% or more, solvent resistance can be secured, and when it is 25 mass% or less, sufficient pattern adhesion can be secured, so that pattern formation by development can be appropriately performed.
실시예 1∼20, 24∼30, 실시예 21∼23의 결과로부터 (C)성분으로서 글리시딜기를 2개 이상 갖는 에폭시 화합물을 사용함으로써 에폭시시클로헥실기를 갖는 에폭시 화합물과 비교해서 경시에 의한 패턴 선폭의 변화를 억제할 수 있는 것을 알 수 있었다. 이것은 글리시딜기를 갖는 에폭시 화합물을 적용함으로써, 실온 이하의 온도에 있어서의 감광성 수지의 카르복실기와 에폭시기의 반응을 억제할 수 있기 때문이라고 생각된다.From the results of Examples 1 to 20, 24 to 30, and Examples 21 to 23, it was found that by using an epoxy compound having two or more glycidyl groups as the (C) component, the change in pattern line width due to time can be suppressed compared to an epoxy compound having an epoxycyclohexyl group. This is thought to be because by applying an epoxy compound having a glycidyl group, the reaction between the carboxyl group of the photosensitive resin and the epoxy group at a temperature below room temperature can be suppressed.
또한 실시예 1∼20, 24∼30, 비교예 17, 18의 결과로부터 (C)성분으로서 글리시딜기를 갖는 에폭시 화합물, (D)성분으로서 디시안디아미드를 사용함으로써, 경시 변화에 의한 패턴 선폭 변화를 현저하게 억제할 수 있는 것을 알 수 있었다. 이것은 예를 들면 에폭시 화합물의 경화제로서 산 무수물을 사용하는 경우에는 경시 변화에 의해 산 무수물이 개환되어 버리면 현상시에 패턴 선폭이 변화되기 쉬운 것에 대해서, 디시안디아미드는 저온 하에서의 안정성이 우수하기 때문에 경시 변화에 의한 패턴 선폭이 변화되기 어렵기 때문이라고 생각된다.In addition, from the results of Examples 1 to 20, 24 to 30 and Comparative Examples 17 and 18, it was found that by using an epoxy compound having a glycidyl group as the (C) component and dicyandiamide as the (D) component, the change in pattern linewidth due to changes over time can be significantly suppressed. This is thought to be because, for example, when an acid anhydride is used as a curing agent for an epoxy compound, the pattern linewidth is likely to change during development if the acid anhydride is ring-opened due to changes over time, whereas dicyandiamide has excellent stability under low temperatures, so it is difficult for the pattern linewidth to change over time.
실시예 1∼30의 결과로부터 (C)성분의 에폭시 당량과 (D)디시안디아미드의 아미노기의 당량의 비가 0.5∼2.0의 범위이면, 형성되는 경화막의 선폭 재현성, 직선 재현성, 내용제성을 충분히 높일 수 있는 것을 알 수 있었다. 이것은 에폭시 화합물을 충분히 경화시킬 수 있으므로, 미반응의 에폭시 화합물이 감광성 수지 조성물 중에 남는 것을 억제할 수 있기 때문이라고 생각된다.From the results of Examples 1 to 30, it was found that when the ratio of the epoxy equivalent of component (C) to the equivalent of the amino group of dicyandiamide (D) is in the range of 0.5 to 2.0, the line width reproducibility, linear reproducibility, and solvent resistance of the formed cured film can be sufficiently improved. This is thought to be because the epoxy compound can be sufficiently cured, thereby suppressing unreacted epoxy compound from remaining in the photosensitive resin composition.
실시예 26∼29의 결과로부터 평균 입자지름이 1∼95nm인 (I)실리카 입자를 첨가함으로써 도막면으로부터 측정하는 반사율을 저감할 수 있는 것을 알 수 있었다. 이것은 평균 입자지름이 작은 실리카 입자를 사용함으로써 경화막(도막) 표면의 요철을 저감할 수 있고, 경화막(도막) 면내의 반사율의 불균일을 억제할 수 있기 때문이라고 생각된다.From the results of Examples 26 to 29, it was found that the reflectance measured from the surface of the coating film could be reduced by adding (I) silica particles having an average particle diameter of 1 to 95 nm. This is thought to be because the use of silica particles having a small average particle diameter can reduce the unevenness of the surface of the cured film (coating film) and suppress the unevenness of the reflectance within the surface of the cured film (coating film).
상기 실시예 1∼30, 비교예 1∼18의 결과로부터 명백하듯이, 본 발명의 일반식(1)의 불포화기 함유 알칼리 가용성 수지 및 에폭시 경화제로서 디시안디아미드를 포함하는 감광성 수지 조성물을 사용함으로써, 140℃ 이하와 같은 저온의 소성에 있어서도 세밀한 패턴 형성을 할 수 있는 경화막을 제작할 수 있는 것을 알 수 있었다.As is clear from the results of Examples 1 to 30 and Comparative Examples 1 to 18, it was found that by using a photosensitive resin composition containing an unsaturated group-containing alkali-soluble resin of the general formula (1) of the present invention and dicyandiamide as an epoxy curing agent, a cured film capable of forming a detailed pattern can be produced even at a low-temperature firing temperature of 140°C or lower.
본 발명의 감광성 수지 조성물은 경화막 패턴을 형성하는 프로세스로 140℃를 초과하는 온도에서 열경화하는 공정을 포함하지 않더라도, 선폭이 10±2㎛인 범위내이며, 현상 밀착성이나 직선성이 우수하고, 또한, 내용제성이 양호한 경화막 패턴을 형성할 수 있다. 그 때문에, 내열온도가 140℃ 이하인 PET, PEN 등의 수지제 필름, 및 유리 기판이나 실리콘 웨이퍼 상에 유기 EL이나 유기 TFT 등을 구비한 유기 디바이스 부착 기판 등에 대해서 상술한 특성을 구비한 경화막 패턴을 형성할 수 있다. 본 발명의 감광성 수지 조성물은 예를 들면 컬러 필터나 유기 EL 화소 또는 터치패널을 형성할 때 등에 필요하게 되는 투명막 패턴, 절연막 패턴, 블랙 매트릭스, 격벽 패턴 등이라는 경화막을 내열온도가 낮은 기판에 대해서 형성하기에 적합하며, 이들 경화막 부착 기판을 액정이나 유기 EL 등의 표시 장치의 제조, 및 CMOS 등의 고체 촬영 소자, 터치패널의 제조에 사용할 수 있게 된다.The photosensitive resin composition of the present invention can form a cured film pattern having a line width of 10±2 ㎛, excellent development adhesion and linearity, and good solvent resistance, even without including a process of heat-curing at a temperature exceeding 140°C as a process for forming a cured film pattern. Therefore, a cured film pattern having the above-described properties can be formed on a resin film such as PET or PEN having a heat-resistant temperature of 140°C or lower, and an organic device attachment substrate having an organic EL or organic TFT on a glass substrate or a silicon wafer. The photosensitive resin composition of the present invention is suitable for forming a cured film such as a transparent film pattern, an insulating film pattern, a black matrix, a partition pattern, or the like required when forming a color filter, an organic EL pixel, or a touch panel, on a substrate having a low heat-resistant temperature, and these cured film attachment substrates can be used for the manufacture of display devices such as liquid crystals or organic EL, and the manufacture of solid-state photographing elements such as CMOS, and touch panels.
Claims (14)
(A)불포화기 함유 알칼리 가용성 수지와,
(B)적어도 2개 이상의 에틸렌성 불포화 결합을 갖는 광중합성 모노머와,
(C)에폭시기를 2개 이상 갖는 에폭시 화합물과,
(D)디시안디아미드와,
(E)광중합 개시제와,
(F)용제,
를 포함하고,
(A)성분의 불포화기 함유 알칼리 가용성 수지는 일반식(1)로 나타내어지는 불포화기 함유 알칼리 가용성 수지이며,
(C)성분과 (D)성분의 질량의 합계는 고형분의 전체 질량에 대해서 6∼24질량%인 감광성 수지 조성물.
(식(1) 중, R1, R2, R3 및 R4는 각각 독립적으로 수소원자, 탄소수 1∼5의 알킬기, 할로겐원자 또는 페닐기이며, R5는 수소원자 또는 메틸기이며, X는 -CO-, -SO2-, -C(CF3)2-, -Si(CH3)2-, -CH2-, -C(CH3)2-, -O-, 플루오렌-9,9-디일기 또는 직결합이며, Y는 4가의 카르복실산 잔기이며, Z는 각각 독립적으로 수소원자 또는 일반식(2)로 나타내어지는 치환기이다. 단, Z 중 1개 이상은 일반식(2)로 나타내어지는 치환기이며, n은 1∼20의 정수이다.)
(식(2) 중, W는 2가 또는 3가의 카르복실산 잔기이며, m은 1 또는 2이다.)A photosensitive resin composition used to form a cured film on a substrate having a heat-resistant temperature of 140°C or lower.
(A) An alkali-soluble resin containing an unsaturated group,
(B) A photopolymerizable monomer having at least two ethylenically unsaturated bonds, and
(C) An epoxy compound having two or more epoxy groups,
(D) Dicyandiamide, and
(E) Photopolymerization initiator and,
(F)Solvent,
Including,
(A) The unsaturated group-containing alkali-soluble resin of component is an unsaturated group-containing alkali-soluble resin represented by general formula (1).
A photosensitive resin composition in which the sum of the masses of components (C) and (D) is 6 to 24 mass% with respect to the total mass of the solid content.
(In formula (1), R 1 , R 2 , R 3 and R 4 are each independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a halogen atom or a phenyl group, R 5 is a hydrogen atom or a methyl group, X is -CO-, -SO 2 -, -C(CF 3 ) 2 -, -Si(CH 3 ) 2 -, -CH 2 -, -C(CH 3 ) 2 -, -O-, a fluorene-9,9-diyl group or a direct bond, Y is a tetravalent carboxylic acid residue, and Z is each independently a hydrogen atom or a substituent represented by general formula (2). However, at least one of Z is a substituent represented by general formula (2), and n is an integer of 1 to 20.)
(In formula (2), W is a divalent or trivalent carboxylic acid residue, and m is 1 or 2.)
상기 (C)성분의 에폭시 화합물은 에폭시 당량이 100∼300g/eq인 감광성 수지 조성물.In the first paragraph,
The epoxy compound of the above (C) component is a photosensitive resin composition having an epoxy equivalent of 100 to 300 g/eq.
상기 (C)성분의 에폭시 화합물은 글리시딜기를 2개 이상 갖는 에폭시 화합물인 감광성 수지 조성물.In the first paragraph,
A photosensitive resin composition in which the epoxy compound of the above (C) component is an epoxy compound having two or more glycidyl groups.
상기 (C)성분의 에폭시기의 당량수(Eep)와, (D)성분의 디시안디아미드의 아미노기의 당량수(Eam)의 비율은 Eep/Eam=0.5∼2인 감광성 수지 조성물.In the first paragraph,
A photosensitive resin composition in which the ratio of the equivalent number (E ep ) of the epoxy group of the above-mentioned (C) component and the equivalent number (E am ) of the amino group of dicyandiamide of the (D) component is E ep /E am = 0.5 to 2.
경화 촉진제로서 (G)이미다졸 화합물을 포함하고, 경화 촉진제의 질량은 상기 (C)성분의 에폭시 화합물과 상기 (D)성분의 디시안디아미드의 고형분의 전체 질량에 대해서 0.05∼2질량%인 감광성 수지 조성물.In the first paragraph,
A photosensitive resin composition comprising an imidazole compound (G) as a curing accelerator, wherein the mass of the curing accelerator is 0.05 to 2 mass% with respect to the total mass of the solid content of the epoxy compound of the component (C) and the dicyandiamide of the component (D).
유기 안료 또는 무기 안료로 이루어지는 군에서 선택되는 (H)착색재를 포함하는 감광성 수지 조성물.In the first paragraph,
A photosensitive resin composition comprising a (H) coloring agent selected from the group consisting of organic pigments or inorganic pigments.
상기 (H)착색재는 흑색 유기 안료, 혼색 유기 안료 또는 흑색 무기 안료로 이루어지는 군에서 선택되는 차광재인 감광성 수지 조성물.In paragraph 7,
A photosensitive resin composition in which the above (H) coloring agent is a light-blocking agent selected from the group consisting of a black organic pigment, a mixed color organic pigment, or a black inorganic pigment.
(I)실리카 입자를 포함하고, 상기 실리카 입자의 평균 입자지름이 1∼95nm인 감광성 수지 조성물.In the first paragraph,
(I) A photosensitive resin composition containing silica particles, wherein the average particle diameter of the silica particles is 1 to 95 nm.
상기 (E)광중합 개시제는 365nm에 있어서의 몰 흡광계수가 10000L/㏖·㎝ 이상인 아실옥심계 광중합 개시제인 감광성 수지 조성물.In the first paragraph,
A photosensitive resin composition wherein the above (E) photopolymerization initiator is an acyl oxime photopolymerization initiator having a molar absorption coefficient of 10,000 L/mol cm or more at 365 nm.
상기 (E)광중합 개시제는 일반식(3)으로 나타내어지는 아실옥심계 광중합 개시제인 감광성 수지 조성물.
(R6, R7은 각각 독립적으로 C1∼C15의 알킬기, C6∼C18의 아릴기, C7∼C20의 아릴알킬기 또는 C4∼C12의 복소환기이며, R8은 C1∼C15의 알킬기, C6∼C18의 아릴기 또는 C7∼C20의 아릴알킬기이다. 여기에서, 알킬기 및 아릴기는 C1∼C10의 알킬기, C1∼C10의 알콕시기, C1∼C10의 알카노일기, 할로겐으로 치환되어 있어도 좋고, 알킬렌 부분은 불포화 결합, 에테르 결합, 티오에테르 결합, 에스테르 결합을 포함하고 있어도 좋다. 또한 알킬기는 직쇄, 분기 또는 환상의 어느 알킬기이어도 좋다.)In Article 10,
A photosensitive resin composition in which the above (E) photopolymerization initiator is an acyl oxime photopolymerization initiator represented by general formula (3).
( R6 , R7 are each independently a C1∼C15 alkyl group, a C6∼C18 aryl group, a C7∼C20 arylalkyl group, or a C4∼C12 heterocyclic group, and R8 is a C1∼C15 alkyl group, a C6∼C18 aryl group, or a C7∼C20 arylalkyl group. Here, the alkyl group and the aryl group may be substituted with a C1∼C10 alkyl group, a C1∼C10 alkoxy group, a C1∼C10 alkanoyl group, or a halogen, and the alkylene moiety may contain an unsaturated bond, an ether bond, a thioether bond, or an ester bond. In addition, the alkyl group may be any linear, branched, or cyclic alkyl group.)
제 1 항, 제 3 항 내지 제 11 항 중 어느 한 항에 기재된 감광성 수지 조성물을 기판 상에 도포하고, 포토마스크를 통해 노광하고, 현상에 의해 미노광부를 제거하고, 140℃ 이하에서 가열해서 경화막 패턴을 형성하는 경화막 부착 기판의 제조 방법.A method for manufacturing a substrate having a cured film attached thereto by forming a cured film pattern on a substrate having a heat-resistant temperature of 140°C or lower,
A method for producing a substrate with a cured film attached, comprising: applying the photosensitive resin composition according to any one of claims 1, 3 to 11 onto a substrate, exposing through a photomask, removing unexposed portions by development, and heating at 140° C. or lower to form a cured film pattern.
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JP2007057797A (en) * | 2005-08-24 | 2007-03-08 | Fujifilm Corp | Photosensitive film and method for producing the same, and permanent pattern and method for forming the same |
JP2014106458A (en) | 2012-11-29 | 2014-06-09 | Hitachi Chemical Co Ltd | Photosensitive resin composition and photosensitive element using the same |
JP2018169518A (en) * | 2017-03-30 | 2018-11-01 | 株式会社タムラ製作所 | Photosensitive resin composition and printed wiring board |
JP2018173609A (en) | 2017-03-31 | 2018-11-08 | 太陽インキ製造株式会社 | Curable resin composition, dry film, cured product, and printed wiring board |
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JP6383621B2 (en) | 2014-09-24 | 2018-08-29 | 太陽インキ製造株式会社 | Curable composition, dry film, cured product, printed wiring board and method for producing printed wiring board |
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JP2007057797A (en) * | 2005-08-24 | 2007-03-08 | Fujifilm Corp | Photosensitive film and method for producing the same, and permanent pattern and method for forming the same |
JP2014106458A (en) | 2012-11-29 | 2014-06-09 | Hitachi Chemical Co Ltd | Photosensitive resin composition and photosensitive element using the same |
JP2018169518A (en) * | 2017-03-30 | 2018-11-01 | 株式会社タムラ製作所 | Photosensitive resin composition and printed wiring board |
JP2018173609A (en) | 2017-03-31 | 2018-11-08 | 太陽インキ製造株式会社 | Curable resin composition, dry film, cured product, and printed wiring board |
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JP2020166253A (en) | 2020-10-08 |
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