KR102748549B1 - Display device and method for manufacturing thereof - Google Patents

Abstract

The present invention provides a display device capable of preventing moisture from penetrating into a bank and a manufacturing method thereof. According to one embodiment of the present invention, a display device includes a plurality of pixels arranged on a substrate, a bank dividing the plurality of pixels, a blocking film arranged on the bank and composed of a plurality of patterns, and a spacer arranged on the blocking film so as to overlap the blocking film.

Description

DISPLAY DEVICE AND METHOD FOR MANUFACTURING THEREOF

The present invention relates to a display device and a method for manufacturing the same.

As the information society develops, the demand for display devices for displaying images is increasing in various forms. Accordingly, various display devices such as liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light emitting displays (OLEDs) are being utilized recently.

Among display devices, organic light-emitting display devices are self-luminous, and have superior viewing angles and contrast ratios compared to liquid crystal displays (LCDs). They do not require a separate backlight, so they can be made thin and light, and have the advantage of low power consumption. In addition, organic light-emitting display devices can be driven by low DC voltage, have a fast response speed, and have the advantage of low manufacturing costs.

An organic light-emitting display device includes pixels, each including an organic light-emitting element, and a bank that partitions the pixels to define the pixels. The bank can serve as a pixel definition film. The organic light-emitting element includes an anode electrode, a hole transporting layer, an organic light emitting layer, an electron transporting layer, and a cathode electrode. In this case, when a high potential voltage is applied to the anode electrode and a low potential voltage is applied to the cathode electrode, holes and electrons move to the organic light-emitting layer through the hole transporting layer and the electron transporting layer, respectively, and combine with each other in the organic light-emitting layer to emit light.

Organic light-emitting diodes have the disadvantage of being easily deteriorated by external factors such as external moisture and oxygen. To prevent this, the organic light-emitting display device forms a sealing film to prevent external moisture and oxygen from penetrating the organic light-emitting diode. At this time, the sealing film includes an inorganic film to prevent oxygen or moisture from penetrating the organic light-emitting layer and the cathode electrode.

This encapsulation film is formed to cover the organic light-emitting element. The organic light-emitting element may use a mask to apply an organic light-emitting layer to each pixel partitioned into banks, but the mask may damage the bank. When an inorganic film forming an encapsulation film is laminated on a damaged bank, a seam in which the inorganic film is broken, as illustrated in FIG. 1, may occur in the damaged area. When the inorganic film seam occurs, moisture may permeate into the bank through the inorganic film seam. The moisture that has permeated into the bank may permeate into the organic light-emitting layer and cathode electrode formed adjacent to the bank and oxidize them, thereby causing deterioration of the organic light-emitting element.

The present invention provides a display device capable of preventing moisture from penetrating into a bank and a method for manufacturing the same.

A display device according to one embodiment of the present invention includes a plurality of pixels arranged on a substrate, a bank that partitions the plurality of pixels, a blocking film arranged on the bank and composed of a plurality of patterns, and a spacer arranged on the blocking film so as to overlap the blocking film.

A display device according to another embodiment of the present invention includes the steps of forming a first electrode on a substrate, forming a bank to cover an edge of the first electrode, forming a blocking film on the bank, and forming a spacer on the blocking film.

In an embodiment of the present invention, a spacer is formed on a bank so that a mask (FMM, Fine Metal Mask) can be supported by the spacer when depositing an organic light-emitting layer. Accordingly, in an embodiment of the present invention, the bank can be prevented from being damaged by the mask.

In addition, the embodiment of the present invention can block moisture that has penetrated into the spacer from spreading to the bank by forming a barrier film between the bank and the spacer. Accordingly, the embodiment of the present invention can prevent the organic light-emitting layer and the cathode electrode in contact with the bank from being oxidized, and improve the yield and reliability of the display device.

In addition, the embodiment of the present invention can prevent the film from being lifted due to stress by forming the barrier film thinly, while preventing the process time from being extended.

Figure 1 is a drawing showing an example of a seam occurring in a weapon membrane.
FIG. 2 is a perspective view showing a display device according to one embodiment of the present invention.
FIG. 3 is a plan view showing the first substrate, gate driver, source driver IC, flexible film, circuit board, and timing controller of FIG. 2.
Figure 4 is a plan view showing an example of pixels in a display area.
Figure 5 is a cross-sectional view showing an example of I-I' of Figure 4.
Figure 6 is an enlarged view of area A of Figure 5.
Figure 7 is a flowchart for explaining a method for manufacturing a display device according to one embodiment of the present invention.
FIGS. 8A to 8H are cross-sectional views illustrating a method for manufacturing a display device according to one embodiment of the present invention.

The advantages and features of the present invention, and the methods for achieving them, will become clear with reference to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and the embodiments are provided only to make the disclosure of the present invention complete and to fully inform a person having ordinary skill in the art to which the present invention belongs of the scope of the invention, and the present invention is defined only by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining embodiments of the present invention are exemplary, and the present invention is not limited to the matters illustrated. The same reference numerals refer to the same components throughout the specification. In addition, in explaining the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the gist of the present invention, the detailed description will be omitted.

In the present specification, when the words "includes," "has," and "consists of," are used, other parts may be added unless "only" is used. When a component is expressed in the singular, it includes the plural unless there is a special explicit description.

When interpreting a component, it is interpreted as including the error range even if there is no separate explicit description.

When describing a positional relationship, for example, when the positional relationship between two parts is described as 'on ~', 'upper ~', 'lower ~', 'next to ~', etc., one or more other parts may be located between the two parts, unless 'right' or 'directly' is used.

When describing a temporal relationship, for example, when describing a temporal relationship using phrases such as 'after', 'following', 'next to', or 'before', it can also include cases where there is no continuity, as long as 'right away' or 'directly' is not used.

Although the terms first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, a first component referred to below may also be a second component within the technical concept of the present invention.

“X-axis direction”, “Y-axis direction” and “Z-axis direction” should not be interpreted as merely geometric relationships in which the relationship between them is perpendicular to each other, but may mean a wider directionality within the range in which the configuration of the present invention can function functionally.

The term "at least one" should be understood to include all combinations that can be represented from one or more of the associated items. For example, the meaning of "at least one of the first, second, and third items" can mean not only each of the first, second, or third items, but also all combinations of items that can be represented from two or more of the first, second, and third items.

The features of each of the various embodiments of the present invention may be partially or wholly combined or combined with one another, and may be technically linked and driven in various ways, and each embodiment may be implemented independently of one another or may be implemented together in a related relationship.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

FIG. 2 is a perspective view showing a display device according to one embodiment of the present invention. FIG. 3 is a plan view showing a first substrate, a gate driver, a source driver IC, a flexible film, a circuit board, and a timing controller of FIG. 2.

Hereinafter, the display device according to one embodiment of the present invention is described mainly as an organic light emitting display, but is not limited thereto. That is, the display device according to one embodiment of the present invention may be implemented as any one of a liquid crystal display, a field emission display, and an electrophoresis display, in addition to an organic light emitting display.

Referring to FIGS. 2 and 3, a display device (100) according to one embodiment of the present invention includes a display panel (110), a gate driver (120), a source driver integrated circuit (hereinafter referred to as “IC”) (130), a flexible film (140), a circuit board (150), and a timing control unit (160).

The display panel (110) includes a first substrate (111) and a second substrate (112). The second substrate (112) may be a sealing substrate. The first substrate (111) may be a plastic film or a glass substrate. The second substrate (112) may be a plastic film, a glass substrate, or a sealing film.

Gate lines, data lines, and pixels are formed on one surface of the first substrate (111) facing the second substrate (112). The pixels are provided in an area defined by the intersection structure of the gate lines and data lines.

Each of the pixels may include an organic light-emitting element having a thin film transistor, a first electrode, an organic light-emitting layer, and a second electrode. Each of the pixels supplies a predetermined current to the organic light-emitting element according to a data voltage of a data line when a gate signal is input from a gate line using the thin film transistor. Accordingly, the organic light-emitting element of each of the pixels can emit light with a predetermined brightness according to a predetermined current. A description of the structure of each of the pixels will be described below with reference to FIGS. 4 and 5.

The display panel (110) can be divided into a display area (DA) where pixels are formed to display an image, as shown in Fig. 3, and a non-display area (NDA) where no image is displayed. Gate lines, data lines, and pixels can be formed in the display area (DA). Gate driving units (120) and pads can be formed in the non-display area (NDA).

The gate driver (120) supplies gate signals to the gate lines according to the gate control signal input from the timing controller (160). The gate driver (120) may be formed in a non-display area (DA) outside one side or both sides of the display area (DA) of the display panel (110) in a GIP (gate driver in panel) manner. Alternatively, the gate driver (120) may be manufactured as a driving chip, mounted on a flexible film, and attached to a non-display area (DA) outside one side or both sides of the display area (DA) of the display panel (110) in a TAB (tape automated bonding) manner.

The source drive IC (130) receives digital video data and a source control signal from the timing control unit (160). The source drive IC (130) converts digital video data into analog data voltages according to the source control signal and supplies the same to data lines. When the source drive IC (130) is manufactured as a driving chip, it can be mounted on a flexible film (140) in a COF (chip on film) or COP (chip on plastic) manner.

Pads such as data pads may be formed in the non-display area (NDA) of the display panel (110). Wires connecting the pads and the source drive IC (130) and wires connecting the pads and the wires of the circuit board (150) may be formed in the flexible film (140). The flexible film (140) is attached onto the pads using an anisotropic conducting film, thereby connecting the pads and the wires of the flexible film (140).

The circuit board (150) may be attached to the flexible films (140). The circuit board (150) may have a plurality of circuits implemented with driving chips mounted thereon. For example, a timing control unit (160) may be mounted on the circuit board (150). The circuit board (150) may be a printed circuit board or a flexible printed circuit board.

The timing control unit (160) receives digital video data and timing signals from an external system board through a cable of the circuit board (150). The timing control unit (60) generates a gate control signal for controlling the operation timing of the gate driver (120) and a source control signal for controlling the source drive ICs (130) based on the timing signal. The timing control unit (160) supplies the gate control signal to the gate driver (120) and the source control signal to the source drive ICs (130).

Fig. 4 is a plan view showing an example of pixels in a display area. In Fig. 4, only the light-emitting parts (RE, GE, BE), bank (B), blocking film (BL), and spacer (S) of the pixels are shown for convenience of explanation.

Referring to FIG. 4, the display area (DA) includes a light-emitting area (EA) and a non-light-emitting area (NEA). The light-emitting area (EA) includes light-emitting portions (RE, GE, BE). Each of the light-emitting portions (RE, GE, BE) includes a first electrode corresponding to an anode electrode, an organic light-emitting layer, and a second electrode corresponding to a cathode electrode, which are sequentially laminated so that holes from the first electrode and electrons from the second electrode combine with each other in the organic light-emitting layer to emit light.

The organic light-emitting layers of the light-emitting units (RE, GE, BE) may include a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer. Specifically, the organic light-emitting layer of the red light-emitting unit (RE) is formed as a red light-emitting layer and emits red light. The organic light-emitting layer of the green light-emitting unit (GE) is formed as a green light-emitting layer and emits green light. The organic light-emitting layer of the blue light-emitting unit (BE) is formed as a blue light-emitting layer and emits blue light. Although not shown in FIG. 4, a white light-emitting unit may be further included. The organic light-emitting layer of the white light-emitting unit is formed as a white light-emitting layer and may emit white light.

Meanwhile, in Fig. 4, a red sub-pixel including a red light-emitting portion (RE), a green sub-pixel including a green light-emitting portion (GE), and a blue sub-pixel including a blue light-emitting portion (BE) may be defined as one unit pixel. However, the embodiment of the present invention is not limited thereto, and a red sub-pixel, a green sub-pixel, a blue sub-pixel, and a white sub-pixel including a white light-emitting portion may be defined as one unit pixel.

The non-emission area (NEA) includes a bank (B), a blocking film (BL), and a spacer (S). The bank (B) is arranged in the non-emission area (NEA) to partition the light-emitting parts (RE, GE, BE). The bank (B) is arranged between the light-emitting parts (RE, GE, BE) and can be formed to cover an edge of a first electrode of each of the light-emitting parts (RE, GE, BE).

The spacer (S) is arranged to protrude on the bank (B) and supports the mask (FMM, Fine Metal Mask) when an organic light-emitting layer is deposited on each of the light-emitting portions (RE, GE, BE). The spacer (S) can prevent the bank (B) from being damaged by the mask by supporting the mask. The spacer (S) is not necessarily positioned in every pixel. The spacer (S) can be formed anywhere within the non-light-emitting area (NEA) considering the load of the mask and the distance between the bank (B) and the spacer (S). For example, the spacer (S) can be arranged between sub-pixels or between unit pixels.

In Fig. 4, the cross-section of the spacer (S) is depicted as a square, but is not limited thereto. The spacer (S) may have a cross-section of a circle, an ellipse, or a polygon.

A barrier film (BL) is arranged between the bank (B) and the spacer (S) to block moisture that has penetrated into the spacer (S) from penetrating to the bank (B). The barrier film (BL) is arranged to overlap with the spacer (S) as illustrated in Fig. 4, and its formation area includes the formation area of the spacer (S).

In Fig. 4, the cross-section of the barrier (BL) is illustrated as a square, but is not limited thereto. The barrier (BL) may have a cross-section of a circle, an ellipse, or a polygon. In addition, in Fig. 4, the cross-section of the barrier (BL) is illustrated as having the same shape as that of the spacer (S), but is not limited thereto. The cross-sections of the barrier (BL) and the spacer (S) may have the same shape or different shapes. Even if they have different cross-sections, the barrier (BL) must include the formation area of the spacer (S) within the formation area.

Fig. 5 is a cross-sectional view showing an example of I-I' of Fig. 4, and Fig. 6 is an enlarged view of area A of Fig. 5.

Referring to FIG. 5, a buffer film is formed on one surface of a first substrate (111) facing a second substrate (112). The buffer film is formed on one surface of the first substrate (111) to protect the thin film transistors (220) and the organic light-emitting elements (260) from moisture penetrating through the first substrate (111) which is vulnerable to moisture permeation. The buffer film may be formed of a plurality of inorganic films that are alternately laminated. For example, the buffer film may be formed as a multi-film in which one or more inorganic films of a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), and SiON are alternately laminated. The buffer film may be omitted.

A thin film transistor (210) is formed on the buffer film. The thin film transistor (210) includes an active layer (211), a gate electrode (212), a source electrode (213), and a drain electrode (214). In FIG. 5, the thin film transistor (210) is exemplified as being formed in a top gate manner in which the gate electrode (212) is positioned above the active layer (211), but it should be noted that the present invention is not limited thereto. That is, the thin film transistors (210) may be formed in a bottom gate manner in which the gate electrode (212) is positioned below the active layer (211), or in a double gate manner in which the gate electrode (212) is positioned above and below the active layer (211).

An active layer (211) is formed on the buffer film. The active layer (211) may be formed of a silicon-based semiconductor material or an oxide-based semiconductor material. A light-blocking layer may be formed between the buffer film and the active layer (211) to block external light incident on the active layer (211).

A gate insulating film (220) may be formed on the active layer (211). The gate insulating film (220) may be formed of an inorganic film, for example, a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), or a multi-film thereof.

A gate electrode (212) and a gate line may be formed on the gate insulating film (220). The gate electrode (212) and the gate line may be formed as a single layer or multiple layers made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

An interlayer insulating film (230) may be formed on the gate electrode (212) and the gate line. The interlayer insulating film (230) may be formed of an inorganic film, for example, a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), or a multi-film thereof.

A source electrode (213), a drain electrode (214), and a data line may be formed on the interlayer insulating film (230). Each of the source electrode (213) and the drain electrode (214) may be connected to the active layer (211) through a contact hole penetrating the gate insulating film (220) and the interlayer insulating film (230). The source electrode (213), the drain electrode (214), and the data line may be formed as a single layer or multiple layers made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

A protective film (240) for insulating the thin film transistor (220) may be formed on the source electrode (223), the drain electrode (224), and the data line. The protective film (240) may be formed of an inorganic film, for example, a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), or a multi-film thereof.

A planarization film (250) may be formed on the protective film (240) to level the step caused by the thin film transistor (210). The planarization film (250) may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

An organic light-emitting element (260) and a bank (270) are formed on a flat film (250). The organic light-emitting element (260) includes a first electrode (261), an organic light-emitting layer (262), and a second electrode (263). The first electrode (261) may be an anode electrode, and the second electrode (263) may be a cathode electrode.

The first electrode (261) may be formed on the planarization film (250). The first electrode (261) is connected to the source electrode (223) of the thin film transistor (210) through a contact hole penetrating the protective film (240) and the planarization film (250). The first electrode (261) may be formed of a metal material having a high reflectivity, such as a laminated structure of aluminum and titanium (Ti/Al/Ti), a laminated structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, and a laminated structure of an APC alloy and ITO (ITO/APC/ITO). The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

The bank (B) may be formed to cover the edge of the first electrode (261) on the planarization film (250) to partition the light-emitting portions (RE, GE, BE). That is, the bank (B) serves to define the light-emitting portion. In addition, the area where the bank (B) is formed does not emit light, and thus may be defined as a non-light-emitting area. The bank (B) may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

The spacer (S) can be formed on the bank (B). The spacer (S) can be formed as a plurality of protruding patterns having a predetermined height and a cross section of a circle, an ellipse, or a polygon on the bank (B). The spacer (S) can support a mask when depositing an organic light-emitting layer using the mask in a subsequent process, thereby preventing the mask from damaging the bank (B).

The spacers (S) can be formed in an appropriate number at an appropriate position within the non-emitting area (NEA) considering the load of the mask and the distance between the bank (B) and the spacers (S). The spacers (S) can be arranged between a plurality of sub-pixels or between a plurality of unit pixels. In this case, the spacers (S) can be formed both between a plurality of sub-pixels or between a plurality of unit pixels, but are not limited thereto. The spacers (S) can also be formed between a plurality of sub-pixels or between a portion of a plurality of unit pixels.

These spacers (S) can be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

A blocking film (BL) is formed between the bank (B) and the spacer (S) to block moisture that has penetrated into the spacer (S) from being transmitted to the bank (B). The blocking film (BL) overlaps the spacer (S) and may be formed of a plurality of patterns having a cross-section of a circle, an ellipse, or a polygon. At this time, the blocking film (BL) may be formed to have a lower area equal to or larger than the area of the spacer (S). Accordingly, in the display device according to the embodiment of the present invention, the bank (B) and the spacer (S) may be separated by the blocking film (BL). Since the bank (B) and the spacer (S) do not come into contact with each other due to the blocking film (BL) formed therebetween, moisture that has penetrated into the spacer (S) cannot be transmitted to the bank (B).

Specifically, an inorganic film (271) may be formed on the bank (B) and the spacer (S) as illustrated in FIG. 6. The inorganic film (271) may have a seam that is broken in two cases during deposition. First, as a step occurs between the bank (B) and the spacer (S), a seam of the inorganic film (271) may occur at the boundary of the spacer (S) due to the step. Second, as the upper surface of the spacer (S) is damaged by the mask and a foreign substance is formed, a seam of the inorganic film (271) may occur on the upper surface of the spacer (S) due to the foreign substance. Moisture may penetrate through the gap where the inorganic film (271) is broken and may propagate to the spacer (S) and may propagate from the spacer (S) toward the bank (B). However, the embodiment of the present invention can prevent moisture from spreading to the bank (B) by forming a blocking film (BL) between the spacer (S) and the bank (B). Accordingly, the embodiment of the present invention can prevent the organic light-emitting layer (262) and the cathode electrode (263) in contact with the bank (B) from being oxidized.

Meanwhile, if the organic light-emitting layer (262) and the cathode electrode (263) in contact with the bank (B) are oxidized by moisture, light is not emitted from the light-emitting portions (RE, GE, BE), which causes serious defects in the display device. In addition, the bank (B) is formed of an organic material and has a high WVTR (Water Vapor Transmission Rate). Since the bank (B) has a fast moisture transmission speed, the light-emitting portions where defects occur can spread quickly. On the other hand, the cathode electrode (263) in contact with the spacer (S) is arranged in the non-light-emitting area (NEA), so even if it is oxidized by moisture, the effect on the light-emitting portions (RE, GE, BE) is small. In addition, since the cathode electrode (263) oxidizes slowly, it can take a long time for it to be oxidized to the light-emitting portions. Accordingly, the embodiment of the present invention places greater importance on the structure that blocks moisture from penetrating into the organic light-emitting layer (262) and cathode electrode (263) in contact with the bank (B).

This barrier film (BL) is an inorganic film and can be formed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide or titanium oxide.

Meanwhile, the blocking film (BL) may be formed thinner than the inorganic films (271, 273) forming the sealing film (270), and specifically, may be formed thinner than 1 ㎛. If the blocking film (BL) is formed to be 1 ㎛ or more, the step between the bank (B) and the spacer (S) becomes larger, so that the possibility of occurrence of a seam in the inorganic film (271) when depositing the inorganic film (271) increases. In addition, the process time of the inorganic film increases in proportion to its thickness. When forming the blocking film (BL) by a separate manufacturing process, if the blocking film (BL) is formed thickly, the process time increases, which reduces the process productivity. To prevent this, the blocking film (BL) formed between the spacer (S) and the bank (B) is preferably thinner than 1 ㎛. In addition, by forming the blocking film (BL) to be thinner than 1 ㎛, the blocking film (BL) can be prevented from being lifted due to stress.

An organic light-emitting layer (262) is formed on the first electrode (261) and the bank (B). The organic light-emitting layer (262) may include a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer. Specifically, the organic light-emitting layer (262) may include a red light-emitting layer that emits red light formed on the first electrode (261) corresponding to the red light-emitting portion (RE). The organic light-emitting layer (262) may include a green light-emitting layer that emits green light formed on the first electrode (261) corresponding to the green light-emitting portion (GE). The organic light-emitting layer (262) may include a blue light-emitting layer that emits blue light formed on the first electrode (261) corresponding to the blue light-emitting portion (BE). Meanwhile, the organic light-emitting layer (262) may further include a white light-emitting layer that emits white light.

The second electrode (263) is formed on the organic light-emitting layer (262). The second electrode (263) is a common layer formed in common on the light-emitting parts (RE, GE, BE). The second electrode (263) may be formed of a transparent metal material (TCO, Transparent Conductive Material) such as ITO or IZO that can transmit light, or a semi-transmissive metal material (Semi-transmissive Conductive Material) such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). A capping layer may be formed on the second electrode (263).

A sealing film (270) is formed on the second electrode (263). The sealing film (270) serves to prevent oxygen or moisture from penetrating into the organic light-emitting layer (262) and the second electrode (263). To this end, the sealing film (270) may include at least one inorganic film and at least one organic film.

For example, the sealing film (270) may include a first inorganic film (271), an organic film (272), and a second inorganic film (273). In this case, the first inorganic film (271) is formed to cover the second electrode (263). The organic film (272) is formed to cover the first inorganic film (271). It is preferable that the organic film (272) be formed to have a sufficient thickness to prevent foreign substances (particles) from penetrating the first inorganic film (271) and entering the organic light-emitting layer (262) and the second electrode (263). The second inorganic film (273) is formed to cover the organic film (272).

Each of the first and second inorganic films (271, 273) may be formed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide or titanium oxide. The organic film (272) may be formed of acrylic resin, epoxy resin, phenolic resin, polyamide resin or polyimide resin.

First to third color filters (not shown) and a black matrix (not shown) may be formed on the sealing film (270). A red color filter may be formed on the red light-emitting portion, a blue color filter may be formed on the blue light-emitting portion, and a green color filter may be formed on the green light-emitting portion.

The sealing film (270) of the first substrate (111) and the color filters (not shown) of the second substrate (112) are bonded using an adhesive layer (not shown), thereby allowing the first substrate (111) and the second substrate (112) to be bonded together. The adhesive layer (not shown) may be a transparent adhesive resin.

FIG. 7 is a flowchart for explaining a method for manufacturing a display device according to one embodiment of the present invention, and FIGS. 8a to 8h are cross-sectional views for explaining a method for manufacturing a display device according to one embodiment of the present invention.

First, a first electrode (261) is formed in a display area (DA) on a first substrate (111) (S701).

As shown in Fig. 8a, a first electrode (261) is formed in the display area (DA). More specifically, a thin film transistor (210) may be formed on a first substrate (111) before forming the first electrode (261). A buffer film may be formed on the first substrate (111). The buffer film is intended to protect the thin film transistor (210) and the organic light-emitting element (260) from moisture penetrating through the first substrate (111) which is vulnerable to moisture permeation, and may be formed of a plurality of inorganic films that are alternately laminated. For example, the buffer film may be formed as a multi-film in which one or more inorganic films of a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), and SiON are alternately laminated. The buffer film may be formed using a CVD (Chemical Vapor Deposition) method.

Then, an active layer (211) of a thin film transistor is formed on the buffer film. Specifically, an active metal layer is formed on the entire surface of the buffer film using a sputtering method or a MOCVD method (Metal Organic Chemical Vapor Deposition). Then, the active metal layer is patterned using a mask process using a photoresist pattern to form the active layer (211). The active layer (211) can be formed of a silicon-based semiconductor material or an oxide-based semiconductor material.

Then, a gate insulating film (220) is formed on the active layer (211). The gate insulating film (220) can be formed of an inorganic film, for example, a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), or a multi-film thereof.

Then, a gate electrode (212) of a thin film transistor (210) is formed on the gate insulating film (220). Specifically, a first metal layer is formed on the entire surface of the gate insulating film (220) using a sputtering method or a MOCVD method. Then, the first metal layer is patterned using a mask process using a photoresist pattern to form the gate electrode (212). The gate electrode (212) can be formed as a single layer or multiple layers made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

Then, an interlayer insulating film (230) is formed on the gate electrode (212). The interlayer insulating film (230) can be formed of an inorganic film, for example, a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), or a multi-film thereof.

Then, contact holes are formed to expose the active layer (211) by penetrating the gate insulating film (220) and the interlayer insulating film (230).

Then, the source and drain electrodes (213, 214) of the thin film transistor (210) are formed on the interlayer insulating film (230). Specifically, a second metal layer is formed on the entire surface of the interlayer insulating film (230) using a sputtering method or a MOCVD method. Then, the second metal layer is patterned using a mask process using a photoresist pattern to form the source and drain electrodes (213, 214). Each of the source and drain electrodes (213, 214) can be connected to the active layer (211) through a contact hole penetrating the gate insulating film (220) and the interlayer insulating film (230). The source and drain electrodes (213, 214) may be formed as a single layer or multiple layers made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof.

Then, a protective film (240) is formed on the source and drain electrodes (213, 214) of the thin film transistor (210). The protective film (240) may be formed of an inorganic film, for example, a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), or a multi-film thereof. The protective film (240) may be formed using a CVD method.

Then, a planarization film (250) is formed on the protective film (240) to planarize the step caused by the thin film transistor (210). The planarization film (250) can be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

Then, a first electrode (261) of an organic light-emitting element (260) is formed on the planarization film (250). Specifically, a third metal layer is formed on the entire surface of the planarization film (280) using a sputtering method or an MOCVD method. Then, the third metal layer is patterned using a mask process using a photoresist pattern to form the first electrode (261). The first electrode (261) can be connected to the source electrode (223) of the thin film transistor (220) through a contact hole penetrating the protective film (240) and the planarization film (250). The first electrode (261) can be formed of a metal material having a high reflectivity, such as a laminated structure of aluminum and titanium (Ti/Al/Ti), a laminated structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, and a laminated structure of an APC alloy and ITO (ITO/APC/ITO).

Next, a bank (B) is formed to cover the edge of the first electrode (261) (S702).

As shown in Fig. 8b, a bank (B) is formed on a planarizing film (250) to cover the edge of the first electrode (261) in order to partition the light-emitting parts (RE, GE, BE). The bank (B) can be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

More specifically, after applying a bank forming material on the flattening film (250) and the first electrode (261), exposure treatment is performed. At this time, the exposure treatment can use a first mask consisting of an opening and a blocking portion. The opening portion corresponds to an area where a bank (B) is to be formed. Thereafter, the bank forming material in an area corresponding to the blocking portion of the first mask is removed using a developer.

Next, a barrier film (BL) is formed on the bank (B) (S703).

As shown in Fig. 8c, a barrier film (BL) is formed on a bank (B) consisting of a plurality of patterns spaced at regular intervals. This barrier film (BL) is an inorganic film and can be formed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, or titanium oxide.

The barrier film (BL) can be deposited on the bank (B) using a chemical vapor deposition (CVD) technique or an atomic layer deposition (ALD) technique. More specifically, after a second mask is placed on the bank (B), a gas including an element for forming the barrier film (BL) is supplied. At this time, the second mask is composed of an opening and a barrier film, and the opening corresponds to a region where the barrier film (BL) is to be formed. The supplied gas causes a chemical reaction on the surface of the bank (B) in the region corresponding to the opening of the second mask, thereby forming the barrier film (BL).

Next, a spacer (S) is formed on the barrier film (BL) (S704).

A spacer (S) is formed on the blocking film (BL) as shown in Fig. 8d. The spacer (S) overlaps the blocking film (BL) and is formed so that the formation area is included within the area where the blocking film (BL) is formed. At this time, the lower area of the spacer (S) is equal to or smaller than the formation area of the blocking film (BL).

These spacers (S) can be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. More specifically, a spacer-forming material is applied on a blocking film (BL) and a bank (B), and then exposure treatment is performed. At this time, the exposure treatment can use a third mask composed of an opening and a blocking part. The opening part corresponds to an area where the spacer (S) is to be formed. Thereafter, the spacer-forming material in an area corresponding to the blocking part of the third mask is removed by a developer.

Next, an organic light-emitting layer (262) and a second electrode (263) are formed on the first electrode (261) (S705).

As shown in Fig. 8e, an organic light-emitting layer (262) is formed on the first electrode (261). The organic light-emitting layer (262) may include a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer. After a fourth mask is placed on the spacer (S), a red light-emitting layer is formed. At this time, the fourth mask is composed of an opening and a blocking portion, and the opening corresponds to the red light-emitting portion (RE). Then, the fourth mask is moved and placed on the spacer (S), and a green light-emitting layer is formed. At this time, the opening of the fourth mask corresponds to the green light-emitting portion (GE). Then, the fourth mask is moved and placed on the spacer (S), and a blue light-emitting layer is formed. At this time, the opening of the fourth mask corresponds to the blue light-emitting portion (BE). According to the above, the organic light-emitting layer (262) is formed in the order of a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer, but is not limited thereto. The stacking order of the red emitting layer, green emitting layer, and blue emitting layer can be changed.

Then, as shown in FIG. 8f, a second electrode (263) is formed on the organic light-emitting layer (262). The second electrode (263) may be formed of a transparent metal material (TCO, Transparent Conductive Material) such as ITO or IZO that can transmit light, or a semi-transmissive metal material (Semi-transmissive Conductive Material) such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). A capping layer may be formed on the second electrode (263).

Next, a sealing film (270) is formed to cover the display area (DA) (S706).

As shown in Fig. 8g, a sealing film (270) is formed on the second electrode (263). More specifically, a first inorganic film (271) is formed to cover the display area (DA). At this time, the first inorganic film (271) is formed using a CVD technique or an ALD technique. The first inorganic film (271) may be formed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, or titanium oxide.

Then, an organic film (272) is formed to cover the first inorganic film (271). The organic film (272) may be formed of an organic material capable of transmitting 99% or more of the light emitted from the organic light-emitting layer (262), such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

Then, a second inorganic film (273) is formed to cover the organic film (272). The second inorganic film (273) can be formed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, or titanium oxide.

Next, the first substrate (111) and the second substrate (112) are joined (S707).

As shown in FIG. 8h, a second substrate (112) is bonded to a first substrate (111). Although not specifically shown in the drawing, first to third color filters (not shown) and a black matrix (not shown) may be formed on the second substrate (112). A red color filter may be formed on a red light-emitting portion, a blue color filter may be formed on a blue light-emitting portion, and a green color filter may be formed on a green light-emitting portion. In this case, the sealing film (270) of the first substrate (111) and the color filters (not shown) of the second substrate (112) are bonded using an adhesive layer (not shown), and thus the first substrate (111) and the second substrate (112) may be bonded.

Alternatively, the first to third color filters (not shown) and the black matrix (not shown) may be directly formed on the sealing film (270) of the first substrate (111) through a subsequent process. In this case, the color filters (not shown) of the first substrate (111) and the second substrate (112) are bonded using an adhesive layer (not shown).

Although the embodiments of the present invention have been described in more detail with reference to the attached drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made without departing from the technical idea of the present invention. Accordingly, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain it, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are exemplary in all aspects and not restrictive. The protection scope of the present invention should be interpreted by the claims, and all technical ideas within a scope equivalent thereto should be interpreted as being included in the scope of the rights of the present invention.

100: Display device 110: Display panel
111: Lower substrate 112: Upper substrate
120: Gate driver 130: Source driver IC
140: Flexible film 150: Circuit board
160: Timing controller 210: Thin film transistor
211: Active layer 212: Gate electrode
213: Source electrode 214: Drain electrode
220: Gate insulating film 230: Interlayer insulating film
240: Shield 250: Flattening Shield
260: Organic light-emitting device 261: First electrode
262: Organic light-emitting layer 263: Second electrode
B: Bank BL: Barrier
S: Spacer 270: Sealing film
271: 1st weapon membrane 272: Organic membrane
273: Second Weapon Screen

Claims (15)

A plurality of pixels arranged on a substrate;
A bank that partitions the above plurality of pixels;
A barrier film formed of a plurality of patterns and arranged on the bank so as to expose both ends of the bank;
A spacer positioned on the barrier so as to expose the upper surface of both ends of the barrier;
An organic light-emitting layer disposed on the bank, covering the upper surface of both ends of the bank exposed by the barrier film, contacting side surfaces of both ends of the barrier film, and positioned so as to sandwich the barrier film disposed on the bank;
A second electrode arranged to cover the spacer, both ends of the blocking film, and the organic light-emitting layer; and
It includes a sealing film arranged to cover the second electrode,
A display device in which the thickness of the organic light-emitting layer disposed on the bank is smaller than the thickness of the blocking film. In the first paragraph,
A display device characterized in that the above barrier film is formed of an inorganic film. In the first paragraph,
A display device characterized in that the above-mentioned barrier film is formed to be larger than the lower area of the spacer. In the first paragraph,
A display device characterized in that the formation area of the spacer is included within the formation area of the blocking film. In the first paragraph,
A display device characterized in that the above bank and the above spacer are formed of an organic film. In the first paragraph,
A display device characterized in that the spacer does not come into contact with the bank. In the first paragraph,
The above pixel is,
The above organic light-emitting layer;
A first electrode disposed between the organic light-emitting layer and the substrate in the area exposed by the bank; and
Including the second electrode disposed on the organic light-emitting layer,
A display device, characterized in that the organic light-emitting layer includes a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer. In the first paragraph,
A display device characterized in that the above-mentioned sealing film includes an inorganic film. In Article 8,
A display device characterized in that the thickness of the above-mentioned barrier film is thinner than the thickness of the inorganic film included in the above-mentioned sealing film. In the first paragraph,
A display device characterized in that the thickness of the above barrier film is less than 1㎛. A step of forming a first electrode on a substrate;
A step of forming a bank to cover the edge of the first electrode;
A step of forming a barrier film on the bank so as to expose both ends of the bank;
A step of forming a spacer on the barrier film so as to expose the upper surface of both ends of the barrier film;
A step of forming an organic light-emitting layer so as to cover the upper surface of both ends of the bank exposed by the barrier film and contact the side surfaces of both ends of the barrier film, and to sandwich the barrier film disposed on the bank;
A step of forming a second electrode to cover the spacer, both ends of the blocking film, and the organic light-emitting layer; and
A step of forming a sealing film to cover the second electrode is included.
A method for manufacturing a display device, wherein the thickness of the organic light-emitting layer disposed on the bank is smaller than the thickness of the blocking film. In the 11th paragraph, the step of forming the barrier film comprises:
A method for manufacturing a display device, characterized in that the above-mentioned barrier film is formed of a plurality of patterns spaced at regular intervals. In the 11th paragraph, the step of forming the barrier film comprises:
A method for manufacturing a display device, characterized in that the barrier film is formed by depositing an inorganic film using a CVD (Chemical Vapor Deposition) technique or an ALD (Atomic Layer Deposition) technique. In Article 11,
A method for manufacturing a display device, characterized in that the spacer is formed to overlap the remaining portion of the blocking film except for both ends. In Article 11,
A method for manufacturing a display device, characterized in that the above-mentioned barrier film is formed to have a larger area than the lower surface of the spacer.

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