KR102734544B1 - Semiconductor device - Google Patents

Abstract

An embodiment discloses a semiconductor device including: a conductive substrate; a light-emitting structure disposed on the conductive substrate, the structure including a first conductive semiconductor layer; a second conductive semiconductor layer; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; and an insulating layer including a protrusion penetrating a portion of the second conductive semiconductor layer, the active layer, and the first conductive semiconductor layer, wherein the protrusion includes at least one first protrusion having a through hole therein; and a second protrusion extending along an outer surface of the light-emitting structure, the active layer being divided into an active region and an inactive region surrounding the active region by the second protrusion, and the light-emitting structure including a step portion located between an outermost portion and a bottom surface.

Description

Semiconductor device {SEMICONDUCTOR DEVICE}

The embodiment relates to a semiconductor device.

Semiconductor devices containing compounds such as GaN and AlGaN have many advantages such as wide and easily tunable band gap energy, and can be used in various ways such as light-emitting devices, light-receiving devices, and various diodes.

In particular, light-emitting devices such as light-emitting diodes (LEDs) or laser diodes using semiconductor materials of groups III-V or II-VI can implement various colors such as red, green, blue, and ultraviolet through the development of thin film growth technology and device materials, and can also implement efficient white light by using fluorescent substances or combining colors, and have the advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to existing light sources such as fluorescent lamps and incandescent lamps.

In addition, when photodetectors or solar cells are made using semiconductor materials of groups 3-5 or 2-6, light-receiving devices can be developed to absorb light of various wavelengths and generate photocurrents, thereby utilizing light of various wavelengths from gamma rays to radio wavelengths. In addition, they have the advantages of fast response speed, safety, environmental friendliness, and easy control of device materials, so they can be easily used in power control or ultra-high frequency circuits or communication modules.

Accordingly, semiconductor devices are being used in a wide range of applications, including transmission modules for optical communication means, light-emitting diode backlights that replace cold cathode fluorescence lamps (CCFLs) that constitute the backlights of LCD (Liquid Crystal Display) displays, white light-emitting diode lighting devices that can replace fluorescent or incandescent bulbs, automobile headlights and signal lights, and sensors that detect gas or fire. In addition, semiconductor devices can be used in a wide range of applications, including high-frequency application circuits, other power control devices, and communication modules.

In particular, light-emitting elements that emit light in the ultraviolet wavelength range can be used for curing, medical, and sterilization purposes by having a curing or sterilizing effect.

Recently, research on ultraviolet light-emitting devices has been active, but there are still problems with vertical implementation of ultraviolet light-emitting devices, and problems with delamination and oxidation due to moisture, which reduces light output.

The embodiment can provide a semiconductor device that is resistant to peeling and moisture.

In addition, a semiconductor device with improved peeling problem due to reduced reliability can be provided.

In addition, a semiconductor device with excellent optical output can be provided.

The problem to be solved in the embodiment is not limited to this, and it can be said that the purpose or effect that can be understood from the solution or embodiment of the problem described below is also included.

According to one feature of the present invention, a semiconductor device comprises: a conductive substrate; a light-emitting structure disposed on the conductive substrate, the light-emitting structure including a first conductive semiconductor layer; a second conductive semiconductor layer; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; and an insulating layer including a protrusion penetrating a portion of the second conductive semiconductor layer, the active layer, and the first conductive semiconductor layer, wherein the protrusion includes at least one first protrusion having a through hole therein; and a second protrusion extending along an outer surface of the light-emitting structure, surrounding the at least one first protrusion, the active layer being divided into an active region and an inactive region surrounding the active region by the second protrusion, and the light-emitting structure including a step portion located between the outermost portion and the bottom surface.

The length between the above-mentioned bottom surface and the above-mentioned outermost portion may be different from the length between the above-mentioned bottom surface and the upper surface of the second protrusion.

The length between the above-mentioned bottom surface and the above-mentioned outermost portion may be greater than the length between the above-mentioned bottom surface and the upper surface of the second protrusion.

The above-mentioned step portion can surround the above-mentioned second protrusion portion.

The length between the above-mentioned bottom surface and the above-mentioned outermost portion may be equal to the length between the above-mentioned bottom surface and the upper surface of the above-mentioned second protrusion.

The conductive substrate may further include an electrode pad spaced apart from the light-emitting structure.

The device further comprises a first conductive layer electrically connected to the first conductive semiconductor layer; and a second conductive layer electrically connected to the second conductive semiconductor layer; wherein the first conductive layer is electrically connected to the first conductive semiconductor layer through a through hole of the first protrusion, and the second conductive layer can overlap with the second protrusion and the step in a vertical direction.

The length between the upper surface of the semiconductor structure and the outermost portion may be greater than or equal to the length between the lower surface and the upper surface of the second protrusion.

According to an embodiment, a semiconductor device with improved reliability can be manufactured by blocking the light-emitting region of the semiconductor device from external moisture or other contaminants.

In addition, the problem of the light-emitting structure being peeled off can be improved.

Additionally, it can improve the optical output of semiconductor devices.

The various advantageous and beneficial advantages and effects of the present invention are not limited to the above-described contents, and will be more easily understood in the course of explaining specific embodiments of the present invention.

Figure 1 is a cross-sectional view of a semiconductor device according to the first embodiment of the present invention.
Figure 2 is an enlarged view of part A in Figure 1.
Figure 3 is an enlarged view of part B in Figure 1.
Figure 4 is a plan view of a semiconductor device according to the first embodiment of the present invention.
Fig. 5 is a cross-sectional view of a portion cut along line AA' in Fig. 4.
Figure 6 is an enlarged view of part C in Figure 5.
Fig. 7 is a cross-sectional view of a semiconductor device according to the second embodiment of the present invention.
Figure 8 is an enlarged view of part D in Figure 7.
FIG. 9 is a cross-sectional view of a semiconductor device according to a third embodiment of the present invention.
Figure 10 is an enlarged view of part E in Figure 9.
FIG. 11 is a plan view of a semiconductor device according to the fourth embodiment of the present invention.
Fig. 12 is a cross-sectional view of a semiconductor device according to the fourth embodiment of the present invention.
FIGS. 13A to 13H are drawings for explaining a method for manufacturing a semiconductor device according to the first embodiment of the present invention.
FIG. 14 is a conceptual diagram of a semiconductor device package according to an embodiment of the present invention.
FIG. 15 is a plan view of a semiconductor device package according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

However, the technical idea of the present invention is not limited to some of the embodiments described, but can be implemented in various different forms, and within the scope of the technical idea of the present invention, one or more of the components among the embodiments can be selectively combined or substituted for use.

In addition, terms (including technical and scientific terms) used in the embodiments of the present invention can be interpreted as having a meaning that can be generally understood by a person of ordinary skill in the technical field to which the present invention belongs, unless explicitly and specifically defined and described, and terms that are commonly used, such as terms defined in a dictionary, can be interpreted in consideration of the contextual meaning of the relevant technology.

Additionally, the terms used in the embodiments of the present invention are for the purpose of describing the embodiments and are not intended to limit the present invention.

In this specification, the singular may also include the plural unless specifically stated otherwise in the phrase, and when it is described as "A and (or at least one) of B, C", it may include one or more of all combinations that can be combined with A, B, C.

Additionally, in describing components of embodiments of the present invention, terms such as first, second, A, B, (a), (b), etc. may be used.

These terms are only intended to distinguish one component from another, and are not intended to limit the nature, order, or sequence of the component.

And, when a component is described as being 'connected', 'coupled' or 'connected' to another component, it may include not only cases where the component is directly connected, coupled or connected to the other component, but also cases where the component is 'connected', 'coupled' or 'connected' by another component between the component and the other component.

In addition, when described as being formed or arranged "above or below" each component, above or below includes not only the case where the two components are in direct contact with each other, but also the case where one or more other components are formed or arranged between the two components. In addition, when expressed as "above or below", it can include the meaning of the downward direction as well as the upward direction based on one component.

The light-emitting structure according to an embodiment of the present invention can output light in the ultraviolet wavelength range. For example, the light-emitting structure can output light in the near ultraviolet wavelength range (UV-A), light in the far ultraviolet wavelength range (UV-B), or light in the deep ultraviolet wavelength range (UV-C). The wavelength range can be determined by the composition ratio of Al in the light-emitting structure. In addition, the light-emitting structure can output light in various wavelengths having different intensities, and the peak wavelength of light having the strongest intensity relative to the intensities of other wavelengths among the wavelengths of the emitted light can be near ultraviolet, far ultraviolet, or deep ultraviolet.

For example, light in the near ultraviolet wavelength range (UV-A) can have a main peak in the range of 320 nm to 420 nm, light in the far ultraviolet wavelength range (UV-B) can have a main peak in the range of 280 nm to 320 nm, and light in the deep ultraviolet wavelength range (UV-C) can have a main peak in the range of 100 nm to 280 nm. The light-emitting structure can generate ultraviolet light having a maximum peak wavelength in the wavelength range of 100 nm to 420 nm.

FIG. 1 is a cross-sectional view of a semiconductor device according to a first embodiment of the present invention, FIG. 2 is an enlarged view of portion A in FIG. 1, and FIG. 3 is an enlarged view of portion B in FIG. 1.

Referring to FIGS. 1 to 3, a semiconductor device (10) according to the first embodiment may include a light-emitting structure (120) including a first conductive semiconductor layer (124), a second conductive semiconductor layer (127), and an active layer (126), a first electrode (142) electrically connected to the first conductive semiconductor layer (124), and a second electrode (146) electrically connected to the second conductive semiconductor layer (127).

First, regarding the light-emitting structure (120), the first conductive semiconductor layer (124) can be implemented with a compound semiconductor of group III-V, group II-VI, etc., and can be doped with a first dopant. The first conductive semiconductor layer (124) can be selected from a semiconductor material having a composition formula of In _x1 Al _y1 Ga _{1 -x1- y1} N (0≤x1≤1, 0≤y1≤1, 0≤x1+y1≤1), for example, AlGaN, InGaN, InAlGaN, etc. And, the first dopant can be an n-type dopant, such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductive semiconductor layer (124) doped with the first dopant can be an n-type semiconductor layer.

The active layer (126) may be arranged between the first conductive semiconductor layer (124) and the second conductive semiconductor layer (127). The active layer (126) may be a layer in which electrons (or holes) injected through the first conductive semiconductor layer (124) and holes (or electrons) injected through the second conductive semiconductor layer (127) recombine.

The active layer (126) can generate light having a wavelength corresponding to the band gap energy of the well layer, which will be described later, as electrons and holes recombine, causing electrons to transition to a lower energy level and the active layer (126) to generate light. Among the wavelengths of light emitted by the semiconductor device, the wavelength of light having the highest intensity may be ultraviolet light, and the ultraviolet light may be the near ultraviolet light, the deep ultraviolet light, or the deep ultraviolet light described above.

The active layer (126) may have any one of a single well structure, a multi-well structure, a single quantum well structure, a multi-quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure, and the structure of the active layer (126) is not limited thereto.

The second conductive semiconductor layer (127) is formed on the active layer (126) and can be implemented with a compound semiconductor of group III-V, group II-VI, etc., and a second dopant can be doped into the second conductive semiconductor layer (127). The second conductive semiconductor layer (127) can be formed with a semiconductor material having a composition formula of In _x5 Al _y2 Ga _{1 -x5- y2} N (0≤x5≤1, 0≤y2≤1, 0≤x5+y2≤1) or a material selected from among AlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductive semiconductor layer (127) doped with the second dopant can be a p-type semiconductor layer.

An electron blocking layer (not shown) may be placed between the active layer (126) and the second conductive semiconductor layer (127). The electron blocking layer (not shown) blocks the flow of electrons supplied from the first conductive semiconductor layer (124) to the active layer (126) from escaping to the second conductive semiconductor layer (127) without recombining in the active layer (126) and emitting light, thereby increasing the probability that electrons and holes recombine within the active layer (126). The energy band gap of the electron blocking layer (not shown) may be larger than the energy band gap of the active layer (126) and/or the second conductive semiconductor layer (127).

The first conductive semiconductor layer (124), the active layer (126), and the second conductive semiconductor layer (127) may all include aluminum (Al). Accordingly, the compositions of the first conductive semiconductor layer (124), the active layer (126), and the second conductive semiconductor layer (127) may all be AlGaN. However, this is not necessarily limited to this, and the compositions of the semiconductor layers may be appropriately adjusted depending on the output wavelength.

Additionally, the light emitting structure (120) may include a first recess (128) and a second recess (129) that penetrate the second conductive semiconductor layer (127) and the active layer (126) and extend to a portion of the first conductive semiconductor layer (124).

A plurality of first recesses (128) may be arranged on the inside of the second recesses (129). The first recesses (128) may have a first electrode (142) arranged therein to serve as a passage for injecting current into the first conductive semiconductor layer (124).

The second recess (129) may extend continuously along the side surface of the light-emitting structure (120). The second recess (129) may be a single recess that extends along the outer surface of the light-emitting structure (120) to form a closed loop, but is not necessarily limited thereto and may be arranged by being divided into a plurality of recesses.

By means of this second recess (129), the active layer (126) can be separated into an inactive area (OA1) disposed on the outside of the second recess (129) and an active area (IA1) disposed on the inside of the second recess (129).

The active region (IA1) can generate light having maximum intensity in the ultraviolet wavelength range by injecting electrons and holes through the first conductive semiconductor layer (124) and the second conductive semiconductor layer (127).

The inactive region (OA1) may be a region where electrons and holes do not combine. The inactive region (OA1) may absorb light irradiated from the active region (IA1) or the outside, and excited electrons may recombine to emit light. However, the emission intensity of the inactive region (OA1) may be very weak compared to the emission intensity of the active region. Alternatively, the inactive region (OA1) may not emit light at all. Therefore, the emission intensity of the inactive region (OA1) may be lower than the emission intensity of the active region (IA1).

The area of the active area (IA1) arranged on the inner side of the second recess (129) may be wider than the area of the inactive area (OA1) arranged on the outer side of the second recess (129).

The ratio of the maximum area of the light-emitting structure (120) to the maximum area of the second recess (129) may be 1:0.01 to 1:0.03. If the ratio of the maximum area of the light-emitting structure (120) to the maximum area of the second recess (129) is less than 1:0.01, the area of the second recess (129) becomes small, making it difficult to prevent oxidation of the active layer (126) by contaminants. In addition, if the ratio of the maximum area of the light-emitting structure (120) to the maximum area of the second recess (129) is greater than 1:0.03, the light-emitting area becomes small, which may lower the light efficiency.

The passivation layer (180) covering the side and upper surface of the light-emitting structure (120) may peel off from the light-emitting structure (120) due to heat generation caused by the operation of the semiconductor element, high temperature and humidity outside, and a difference in thermal expansion coefficient with respect to the light-emitting structure (120). Alternatively, cracks may occur in the passivation layer (180).

If peeling or cracking occurs in the passivation layer (180), the light-emitting structure (120) may be oxidized by external moisture or contaminants that penetrate into the light-emitting structure (120) from the outside.

In the case of ultraviolet light-emitting devices, the Al composition of the active layer (126) is relatively high, so it may be more vulnerable to oxidation. Accordingly, if the side wall of the light-emitting structure (120) is exposed due to a crack or the like, the active layer (126) may be rapidly oxidized, resulting in a decrease in light output.

According to an embodiment, the second recess (129) may be arranged between the inactive area (OA1) and the active area (IA1) to function as a barrier. In addition, the distance between the inactive area (OA1) and the active area (IA1) may be increased by the second recess (129). Accordingly, even if the inactive area (OA1) of the active layer (126) is oxidized, the active area (IA1) of the active layer (126) may be prevented from being oxidized by the second recess (129).

In addition, the semiconductor device (10A) according to the first embodiment may further include a first insulating layer (131), a second insulating layer (132), a first conductive layer (165), a second conductive layer (150), a cover layer (143), a bonding layer (160), and a conductive substrate (170).

The first insulating layer (131) is arranged at the bottom of the light-emitting structure (120) to electrically insulate the first electrode (142) from the active layer (126) and the second conductive semiconductor layer (127).

The first insulating layer (131) may be formed by selecting at least one from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , SixNy, SiOxNy, Al ₂ O ₃ , TiO ₂ , AlN, etc., but is not limited thereto. The first insulating layer (131) may be formed as a single layer or multiple layers. For example, the first insulating layer (131) may be a DBR (distributed Bragg reflector) having a multilayer structure including Si oxide or Ti compound. However, the first insulating layer (131) is not necessarily limited thereto, and may include various reflective structures.

The thickness (T1) of the first insulating layer (131) may correspond to the height (h1) of the first recess (128) and the height (h2) of the second recess (129). That is, the thickness (T1) of the first insulating layer (131) may be equal to or greater than the depth of the first recess (128) and the second recess (129). Accordingly, the first insulating layer (131) may fill the interior of the first recess (128) and the second recess (129).

The first insulating layer (131) may include a first protrusion (131a) positioned inside the first recess (128) and a second protrusion (131b) positioned inside the second recess (129). The second protrusion (131b) and the first protrusion (131a) may extend to the bottom surface (BS) of the light-emitting structure (120) and be connected to each other.

The first protrusion (131a) can be positioned inside the first recess (128). Therefore, the first protrusion (131a) can penetrate into the second conductive semiconductor layer (127), the active layer (126), and a portion of the first conductive semiconductor layer (124).

The first protrusion (131a) may include a through hole (TH1) arranged therein. And the first electrode (142) may be arranged within the through hole (TH1) of the first protrusion (131a) and electrically connected to the first conductive semiconductor layer (124).

The second protrusion (131b) can be positioned inside the second recess (129). Accordingly, the second protrusion (131b) can penetrate into a portion of the second conductive semiconductor layer (127), the active layer (126), and the first conductive semiconductor layer (124).

The second protrusion (131b) can separate the active layer (126) into an inactive area (OA1) and an active area (IA1). Therefore, current may hardly be distributed in the active layer (126) positioned on the outside of the second protrusion (131b). In addition, the second protrusion (131b) can effectively prevent the active layer (126) of the active area (IA1) from being oxidized.

The height (h1) of the first recess (128) may be the same as the height (h1) of the second recess (129). However, it is not necessarily limited thereto, and the height (h1) of the first recess (128) may be different from the height (h1) of the second recess (129). For example, the height (h1) of the first recess (128) may be higher than the height (h1) of the second recess (129). In addition, the first recess (128) should be formed up to a region of the first conductive semiconductor layer (124) having a low contact resistance with the first electrode (142), while the second recess (129) may be sufficient if it has a height that can separate the active layer (126). Conversely, the height (h1) of the second recess (129) may be higher than the height (h1) of the first recess (128). In this case, the moisture penetration path on the side of the light-emitting structure (120) may be lengthened, thereby improving reliability.

The first inclination angle (θ ₁ ) of the first recess (128) may be the same as the second inclination angle (θ ₂ ) of the second recess (129). However, it is not necessarily limited thereto, and the inclination angles of the second recess (129) and the first recess (128) may be different. For example, the inclination angle of the second recess (129) may be greater than the inclination angle of the first recess (128). In this case, the width of the second recess (129) may be reduced to increase the area of the active area (IA1). Alternatively, the inclination angle of the second recess (129) may be smaller than the inclination angle of the first recess (128). In this case, the distance between the active area (IA1) and the inactive area (OA1) of the active layer (126) may be increased, thereby improving reliability.

And in the semiconductor element (10A) according to the first embodiment, the light-emitting structure (120) may have a bottom surface (BS) and an outermost portion (SE). First, the bottom surface (BS) of the light-emitting structure (120) may be the lower surface of the second conductive semiconductor layer (127), and the outermost portion (SE) may be the portion that is arranged at the highest point at the interface where the first conductive semiconductor layer (124) and the first insulating layer (131) come into contact. This outermost portion (SE) may vary depending on the shape of the light-emitting structure (120), but may be arranged on the outer side of the first protrusion (131a) and the second protrusion (131b) described above, and may be positioned to surround the first protrusion (131a) and the second protrusion (131b).

Specifically, the light-emitting structure (120) may have a boundary surface that comes into contact with the first insulating layer (131) disposed thereunder. For example, the bottom surface (BS) of the light-emitting structure (120) may be a part of the boundary surface described above. In addition, the boundary surface may include the bottom surface (BS), the upper surface of the first protrusion (131a), the upper surface of the second protrusion (131b), and a step portion (IS) that is inclined outward from the bottom surface (BS) of the light-emitting structure (120). In this case, the outermost portion (SE) may be located at the top of the step portion (IS).

And the height (h1) of the first recess (129) may be equal to the length between the bottom surface (BS) of the light-emitting structure (120) and the upper surface of the second protrusion (131b). In addition, the height (h2) of the second recess (129) may be equal to the length between the bottom surface (BS) of the light-emitting structure (120) and the upper surface of the first protrusion (131a).

In the present embodiment, the outermost portion (SE) may be positioned above the bottom surface (BS). In addition, the length (h3) between the outermost portion (SE) and the bottom surface (BS) may be different from the top surface (same as the height of the second recess (129), h2) of the bottom surface (BS) and the second protrusion (131b). In an embodiment, the length (h3) between the outermost portion (SE) and the bottom surface (BS) may be greater than or equal to the top surface (h2) of the bottom surface (BS) and the second protrusion (131b).

By this configuration, the contact surface between the first insulating layer (131) and the light-emitting structure (120) can be increased. Accordingly, the peeling phenomenon occurring on the outside of the light-emitting structure (120) due to the intrinsic stress of the light-emitting structure (120) and the stress between the insulating layer (131) and the conductive layer can be easily prevented. In addition, the light-emitting structure (120) can have an increased contact surface with the first insulating layer (131) described above, thereby increasing the path through which oxidation penetrates into the active area (IA1) through the inactive area (OA1). Accordingly, the moisture resistance characteristic can be improved, and the reliability of the semiconductor device can be improved.

In addition, since the outermost part (SE) is arranged above the bottom surface (BS), even if the light generated in the active area (IA1) passes through the second protrusion (131b) in the second recess (129) and is output to the side of the light-emitting structure (120), the light can be reflected upward by the first conductive layer (165) or the second conductive layer (150) arranged under the first insulating layer (131) (increasing the light output). In addition, as described above, even if the light is generated in the inactive area (OA1), the first conductive layer (165) or the second conductive layer (150) can reflect the light upward to increase the light output. This is because the first insulating layer (131) fills the entire inside of the second recess (129), so that the light generated in the active area (IA1) passes through the first insulating layer (131) in the second recess (129) and is output to the side of the light-emitting structure (120) in large quantities. Because.

In addition, when the length (h3) between the bottom surface (BS) and the outermost portion (SE) is the same as the length (h2) between the bottom surface (BS) and the upper surface of the second protrusion (131b), the second recess (129) and the step portion (IS) can be easily formed by etching or the like.

And the length (h3) between the outermost portion (SE) and the bottom surface (BS) may be smaller than the maximum length of the light-emitting structure (120). Here, the maximum length (h4) of the light-emitting structure (120) may be equal to the length from the bottom surface (BS) to the top surface of the first conductive semiconductor layer (124) (corresponding to the top surface of the light-emitting structure).

Specifically, the maximum length (h4) of the light-emitting structure (120) may include high points (HP) and low points (LP) that are alternately arranged in a repeating manner when roughness exists on the upper surface (TS) of the light-emitting structure (120).

At this time, the maximum length (h4) of the light-emitting structure (120) may be the length between the bottom surface (BS) of the light-emitting structure (120) and the lowest point of the top surface (TS) of the light-emitting structure (120). The lowest point may be located at the lowest point (LP) of the top surface (TS) of the light-emitting structure (120).

In addition, the height of the roughness on the upper surface (TS) of the light-emitting structure (120) can be expressed as rms (root mean square). At this time, the roughness can generally be measured using an atomic force microscope (AFM). Specifically, the AFM detects microscopic forces represented by van der Waals forces between atoms and the probe while moving an atomic-sized probe along the surface, and can measure the roughness by detecting that the force changes due to a slight difference in the distance between atoms. In addition, the roughness obtained using the AFM can typically be expressed as the RMS (Root Mean Square) of the detected points.

In an embodiment, for example, the upper surface of the light-emitting structure (120) may have a roughness of 0.5 μm to 1 μm rms. At this time, the height of the roughness may be measured based on the lowest point of the upper surface (TS) of the light-emitting structure (120). And in the embodiment, the length (h5) between the lowest point of the upper surface (TS) of the semiconductor structure (120) and the outermost portion (SE) may be greater than or equal to the length (h2) between the lower surface (BS) and the upper surface of the second protrusion (131b). By this configuration, the minimum gap (LG) between the high point (HP) of the upper surface (TS) of the semiconductor structure (120) and the outermost portion (SE) may increase. By this configuration, the bonding area between the semiconductor structure (120) and the passivation layer (180) or the first insulating layer (131) may increase. In other words, the bonding strength between the passivation layer (180) and the semiconductor structure (120) and the bonding strength between the bottom surface (BS) of the semiconductor structure (120) and the first insulating layer (131) are increased, so that the reliability of the semiconductor element can be improved. In addition, the separation distance between the outermost portion (SE) and the active area (IA1) is increased, so that the reliability of the active area (IA1) can also be significantly improved.

The first electrode (142) may be placed inside the first recess (128) and electrically connected to the first conductive semiconductor layer (124). In addition, the second electrode (146) may be placed on the lower surface of the second conductive semiconductor layer (127) and electrically connected.

The first electrode (142) and the second electrode (146) may be ohmic electrodes. The first electrode (142) and the second electrode (146) can be formed by including at least one of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, or Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, Hf, but are not limited to these materials. For example, the first electrode (142) may have multiple metal layers (e.g., Cr/Al/Ni), and the second electrode (146) may be ITO.

The first conductive layer (165) may include a plurality of protruding electrodes (165-1) that penetrate the first recess (128) and the second insulating layer (132) and are electrically connected to a plurality of first electrodes (142). Accordingly, the first conductive layer (165) and the plurality of first electrodes (142) may form one channel electrode, and this channel electrode may be defined as a first channel electrode.

And the first conductive layer (165) can be made of a material having excellent reflectivity. For example, the first conductive layer (165) can include a metal such as Ti, Ni, or Al. For example, when the first conductive layer (165) includes aluminum, ultraviolet light emitted from the active layer (126) can be reflected upward.

And the first conductive layer (165) may be partially disposed on the outside of the light-emitting structure (120) as described above. In other words, the first conductive layer (165) may have an uppermost surface (165a) disposed on the outside of the light-emitting structure (120). And the uppermost surface (165a) of the first conductive layer (165) may reflect upward when light generated in the active area (IA1) is output to the first conductive layer (165). In addition, as described above, the first conductive layer (165) may also reflect upward for light output from the side of the light-emitting structure (120) in the inactive area (OA1).

The second conductive layer (150) may be electrically connected to the second electrode (146) and the electrode pad (166). Therefore, the electrode pad (166), the second conductive layer (150), and the second electrode (146) may form one electrical channel. Therefore, the second electrode (146) and the second conductive layer (150) may be defined as a second channel electrode. At this time, a cover layer (143) may be arranged between the second electrode (146) and the second conductive layer (150). The cover layer (143) may prevent the second conductive layer (150) from being oxidized by the second electrode (146). For example, the cover layer (143) may include Ni, Au, Ti, or the like, but is not necessarily limited thereto.

The second conductive layer (150) may be disposed on the lower portion of the second electrode (146), the lower portion of the first insulating layer (131), the lower portion of the second recess (129), the lower portion of the light-emitting structure (120), and the lower portion of the electrode pad (166). The second conductive layer (150) may be electrically connected to the active area (IA1) and may extend from the active area (IA1) to the outside of the light-emitting structure (120) through the inactive area (OA1).

The second conductive layer (150) is made of a material having good adhesion to the first insulating layer (131), and may be made of at least one material selected from the group consisting of materials such as Cr, Ti, Ni, and Au, and an alloy thereof, and may be made of a single layer or multiple layers.

The second conductive layer (150) may be arranged between the first insulating layer (131) and the second insulating layer (132). Accordingly, the second conductive layer (150) may be protected from penetration of external moisture or contaminants by the first insulating layer (131) and the second insulating layer (132). In addition, the second conductive layer (150) may be arranged inside the semiconductor element, and an end thereof may be wrapped by the first insulating layer (131) and the second insulating layer (132) so as not to be exposed from the outermost side of the semiconductor element.

The second conductive layer (150) may include a first conductive region (150a), a second conductive region (150b), and an inclined region (150c). The first conductive region (150a) may be arranged on the inner side with respect to the second recess (129), and the second conductive region (150b) may be arranged on the outer side with respect to the second recess (129). That is, the first conductive region (150a) may be arranged in the active region (IA1). And the second conductive region (150b) may be partially arranged in the inactive region (OA1).

The inclined region (150c) may be arranged inside the second recess (129) and may overlap with the second recess (129) and the second protrusion (131b) in the vertical direction of the light-emitting structure (120). In addition, the inclined region (150c) may be arranged on the outside of the second protrusion (131b) and may be arranged to surround the second protrusion (131b). Accordingly, the inclined region (150c) may preferentially prevent external materials from penetrating into the active region (IA1) through the second protrusion (131b). Here, the overall vertical direction of the light-emitting structure (120) may be the stacking direction of the first conductive semiconductor layer (124), the active layer (126), and the second conductive semiconductor layer (127) in the light-emitting structure (120). And the inner side is a direction perpendicular to the vertical direction toward the center of the semiconductor structure, and the outer side means the opposite of the inner side. And the semiconductor structure can be formed in various shapes, and the center can be the center of the semiconductor structure. For example, if the semiconductor structure is circular in planar shape, the center of the semiconductor structure can be located at the center of the circle.

According to an embodiment, since the first insulating layer (131) entirely fills the inside of the second recess (129), the inclined region (150c) can be relatively lowered. In some cases, the inclined region (150c) can be removed. Accordingly, the upper surface (150c-1) of the inclined region (150c) can be positioned lower than the lower surface of the active layer (126). In addition, the upper surface (150c-1) of the inclined region (150c) can be positioned lower than the bottom surface (BS) of the light-emitting structure (120). According to this configuration, the flatness of the second conductive layer (150) is improved, so that the problem of the light-emitting structure (120) being peeled off during a process such as a laser lift off (LLO) can be improved.

In addition, the second conductive layer (150) may have a plurality of steps in addition to the inclined region (150c). In addition, the second conductive layer (150) may extend to the outside of the light-emitting structure (120). That is, the second conductive layer (150) may extend to the outside of the inactive region (OA1) of the light-emitting structure (120). Accordingly, the second conductive layer (150) may be electrically connected to the electrode pad (166) on the outside of the light-emitting structure (120). At this time, the second conductive layer (150) may extend to the outside of the electrode pad (166). However, it is not necessarily limited thereto, and the second conductive layer (150) may be formed to correspond to the electrode pad (166).

In addition, in the embodiment, the second conductive layer (150) may be positioned so that the highest point inside the light-emitting structure (120) is located below the bottom surface (BS) of the light-emitting structure (120) with respect to the conductive substrate (170), but the highest point outside the light-emitting structure (120) may be positioned above the bottom surface (BS) of the light-emitting structure (120). Accordingly, since the flatness of the second conductive layer (150) is improved inside the light-emitting structure (120), the optical and/or electrical characteristics may be improved, and outside the light-emitting structure (120), the light emitted outside may be reflected upward to improve the light output. In addition, as described above, the contact surface between the light-emitting structure (120) and the first insulating layer (131) increases, so that the adhesive strength between them is improved, and thus the reliability may be improved.

The second insulating layer (132) can electrically insulate the first conductive layer (165) and the second conductive layer (150). The first insulating layer (131) and the second insulating layer (132) can be made of the same material or can be made of different materials.

The second insulating layer (132) may extend into the interior of the first recess (128). However, since the second recess (129) is covered by the first insulating layer (131), the second insulating layer (132) may not be disposed inside the second recess (129). Accordingly, the first insulating layer (131) may be disposed inside both the first recess (128) and the second recess (129), while the second insulating layer (132) may be disposed only inside the first recess (128).

The bonding layer (160) may be arranged along the shape of the lower surface (BS) of the light-emitting structure (120). The bonding layer (160) may include a conductive material. For example, the bonding layer (160) may include a material selected from the group consisting of gold, tin, indium, aluminum, silicon, silver, nickel, and copper, or an alloy thereof.

The conductive substrate (170) may include a metal or a semiconductor material. The conductive substrate (170) may be a metal having excellent electrical conductivity and/or thermal conductivity. In this case, heat generated during the operation of the semiconductor element may be quickly released to the outside. In addition, the first electrode (142) may receive current from the outside through the conductive substrate (170).

The conductive substrate (170) may include a material selected from the group consisting of silicon, molybdenum, silicon, tungsten, copper, and aluminum, or an alloy thereof.

A passivation layer (180) may be arranged on the upper surface and side surfaces of the light-emitting structure (120). The thickness of the passivation layer (180) may be 200 nm or more and 500 nm or less. When the thickness is 200 nm or more, the device can be protected from external moisture or foreign substances, thereby improving the electrical and optical reliability of the device. When the thickness is 500 nm or less, the stress applied to the semiconductor device can be reduced, and the problem of the optical and electrical reliability of the semiconductor device being lowered or the unit price of the semiconductor device being increased due to the lengthening of the process time of the semiconductor device can be improved.

The upper surface of the light-emitting structure (120) may be formed with irregularities. These irregularities may improve the extraction efficiency of light emitted from the light-emitting structure (120). The irregularities may have different average heights depending on the wavelength of ultraviolet rays, and in the case of UV-C, they may have a height of about 300 nm to 800 nm, and when they have an average height of about 500 nm to 600 nm, the light extraction efficiency may be improved.

FIG. 4 is a plan view of a semiconductor device according to the first embodiment of the present invention, FIG. 5 is a cross-sectional view taken along line AA' in FIG. 4, and FIG. 6 is an enlarged view of section C in FIG. 5.

Referring to FIG. 4, the outermost portion (SE) of the light-emitting structure (120) includes a first outermost portion (S1) and a third outermost portion (S3) facing each other, a second outermost portion (S2) and a fourth outermost portion (S4) facing each other, and a fifth outermost portion (S5) facing the electrode pad, and the fifth outermost portion (S5) may have a curvature corresponding to the shape of the electrode pad.

The second conductive layer (150) may include a first extension portion (150a) extending outwardly of the first outermost portion (S1), a second extension portion (150b) extending outwardly of the second outermost portion (S2), a third extension portion (150c) extending outwardly of the third outermost portion (S3), a fourth extension portion (150d) extending outwardly of the fourth outermost portion (S4), and a fifth extension portion (150e) extending outwardly of the fifth outermost portion (S5). That is, the second conductive layer (150) may be formed to have a larger area than the light-emitting structure (120) on a plane. According to this configuration, the second conductive layer (150) may be further extended outwardly to improve flatness. Therefore, the occurrence of peeling during the LLO process may be improved, thereby improving yield. Additionally, the second challenge layer (150) can easily reflect light output from the side of the light-emitting structure (120) to the upper portion of the light-emitting structure (120).

Referring to FIG. 5, the step portion (IS) may have a third inclination angle (θ ₃ ) formed with a horizontally extended surface of the bottom surface (BS) that is smaller than or equal to the second inclination angle (θ ₂ ) of the second recess (129). In an embodiment, when the third inclination angle (θ ₃ ) is equal to the second inclination angle (θ ₂ ) of the second recess (129), the step portion (IS) may be formed at the same time as the second recess (129), thereby reducing the process time. In addition, when the third inclination angle (θ ₃ ) is smaller than the second inclination angle (θ ₂ ), the area of the step portion (IS) may increase, thereby further increasing the area of the contact surface between the light emitting structure (120) and the first insulating layer (131). As a result, the peeling phenomenon may be prevented, thereby further improving the reliability of the semiconductor device.

Referring to FIGS. 4 and 6, in the first embodiment, the second recess (129) may be arranged along the outer surface of the light-emitting structure (120) to form a closed loop in a planar view. Accordingly, the active layer of the light-emitting structure (120) may be partitioned into an inactive area (OA1) and an active area (IA1) by the second recess (129). That is, the light-emitting structure (120) may be oxidized by external moisture or contaminants that penetrate into the light-emitting structure (120) from the outside. Furthermore, the active layer of the ultraviolet light-emitting element may be more vulnerable to oxidation because it has a high composition of Al. In response to this, the second recess (129) may block oxidation from spreading to the active area (IA1) when the inactive area (OA1) is oxidized.

Additionally, the first recess (128) may be circular. Corresponding to this shape, the first electrode (142) may also be circular, but is not limited to this shape, and the first recess (128) and the first electrode (142) may have an oval or polygonal shape.

Additionally, the second electrode (146) may be arranged in a polygonal structure (e.g., a honeycomb structure) to surround the first recess 9128) and the first electrode (142), but is not limited thereto.

FIG. 7 is a cross-sectional view of a semiconductor device according to a second embodiment of the present invention, and FIG. 8 is an enlarged view of portion D in FIG. 7.

Referring to FIGS. 7 and 8, a semiconductor device (10B) according to the second embodiment may include a light-emitting structure (120) including a first conductive semiconductor layer (124), a second conductive semiconductor layer (127), and an active layer (126), a first electrode (142) electrically connected to the first conductive semiconductor layer (124), and a second electrode (146) electrically connected to the second conductive semiconductor layer (127). In addition, the semiconductor device (10B) according to the second embodiment may further include a first insulating layer (131), a second insulating layer (132), a first conductive layer (165), a second conductive layer (150), a cover layer (143), a bonding layer (160), and a conductive substrate (170).

The semiconductor device (10B) according to the second embodiment may be applied with the same contents as those of the light-emitting structure (120), the first electrode (142), the second electrode (146), the first insulating layer (131), the second insulating layer (132), the first conductive layer (165), the second conductive layer (150), the cover layer (143), the bonding layer (160), and the conductive substrate (170) described in the semiconductor device according to the first embodiment, except for the contents described below.

First, the light-emitting structure (120) may have a boundary surface that comes into contact with the first insulating layer (131) disposed underneath. In addition, the bottom surface (BS) of the light-emitting structure (120) may be a portion of the boundary surface described above.

Specifically, the boundary surface may include a bottom surface (BS), an upper surface of the first protrusion (131a), an upper surface of the second protrusion (131b), and a step portion (IS) that is inclined outward from the bottom surface (BS) of the light-emitting structure (120). As described above, the outermost portion (SE) of the light-emitting structure (120) may be located at the top of the step portion (IS).

And in the second embodiment, the step portion (IS) may include a plurality of steps. For example, the step portion (IS) may include a first step (IS1) arranged at the top and a second step (IS2) arranged at the bottom. In addition, the plurality of steps may have different inclination angles, and a plurality of flat surfaces may be arranged between the plurality of steps. For example, a flat surface (FS) may be arranged between the first step (IS1) and the second step (IS2).

In an embodiment, the third inclination angle (θ ₃ ) may be larger than the fourth inclination angle (θ ₄ ). Accordingly, the semiconductor device (10B) according to the second embodiment prevents a decrease in moisture resistance due to a decrease in the area of the inactive area (OA1) since the area of the inactive area (OA1) is not reduced by the second step (IS2), and at the same time, the reliability can be improved by improving the bonding force between the first insulating layer (131) and the light emitting structure (120) through the large area of the first step (IS1). Here, the fourth inclination angle (θ ₄ ) is the angle formed by the first step (IS1) and an extension plane of the flat surface (FS) or the bottom surface (BS).

Additionally, the plurality of steps may have different areas due to the difference between the third inclination angle (θ ₃ ) and the fourth inclination angle (θ ₄ ). For example, the area of the first step (IS1) may be larger than the area of the second step (IS2).

However, the number of steps is not limited to two as described above. For example, the first step (IS1) may also be divided into multiple steps, thereby increasing the contact area between the first insulating layer (131) and the light-emitting structure (120), and thus significantly increasing the bonding strength.

In addition, in the semiconductor element (10B) according to the second embodiment, the height (h3) of the second step (IS2) may be the same as the height (h2) of the second recess (129). Accordingly, the step may be formed at the same time as the second recess (129), thereby reducing the process time.

And by this configuration, the outer surface of the light-emitting structure (120) can be formed into a stepped structure having multiple steps.

FIG. 9 is a cross-sectional view of a semiconductor device according to a third embodiment of the present invention, and FIG. 10 is an enlarged view of portion E in FIG. 9.

Referring to FIGS. 9 and 10, a semiconductor device (10C) according to a third embodiment may include a light-emitting structure (120) including a first conductive semiconductor layer (124), a second conductive semiconductor layer (127), and an active layer (126), a first electrode (142) electrically connected to the first conductive semiconductor layer (124), and a second electrode (146) electrically connected to the second conductive semiconductor layer (127). In addition, the semiconductor device (10C) according to the third embodiment may further include a first insulating layer (131), a second insulating layer (132), a first conductive layer (165), a second conductive layer (150), a cover layer (143), a bonding layer (160), and a conductive substrate (170).

The semiconductor device (10C) according to the third embodiment may be applied with the same contents as those of the light-emitting structure (120), the first electrode (142), the second electrode (146), the first insulating layer (131), the second insulating layer (132), the first conductive layer (165), the second conductive layer (150), the cover layer (143), the bonding layer (160), and the conductive substrate (170) described in the semiconductor device according to the first embodiment, except for the contents described below.

In this third embodiment, the semiconductor device may further include an intermediate layer (190) disposed between the first conductive layer (165) and the bonding layer (160).

The intermediate layer (190) may be arranged under the first conductive layer (165) and may be arranged on the outside of the light-emitting structure (120). This intermediate layer (190) may be arranged under the inclined lower surface (165b-1) among the lower surfaces (165b) of the first conductive layer (165). Accordingly, the intermediate layer (190) may extend along the inclined lower surface (165b-1) of the first conductive layer (165).

Specifically, in a semiconductor device, the first insulating layer (131), the second conductive layer (150), and the second insulating layer (132) arranged at the bottom of the light-emitting structure (120) by the step portion (IS) of the light-emitting structure (120) may be arranged to correspond to the step portion (IS) and may be arranged at an angle.

Accordingly, the inclined lower surface (165b-1) of the first conductive layer (165) may have the same shape as the step corresponding to the step (IS) of the light-emitting structure (120). That is, when the bonding layer (160) is bonded to the substrate (170), the upper surface of the bonding layer (160) has the same slope as the step, so that when the bonding layer (160) is formed, a gap may be generated due to the height difference according to the slope inside the bonding layer (160). At this time, the gap may have various shapes and sizes. In addition, the gap may reduce the bonding strength between the plurality of layers (the first conductive layer (165), the second insulating layer (132), the second conductive layer (146), the electrode pad (166), etc.) located on the upper portion of the bonding layer (160) and the bonding layer (160). Accordingly, when pressure, etc. is applied to the plurality of layers located at the upper portion, or when heat is generated during operation of the semiconductor element, a peel-off problem may occur in which the plurality of layers are peeled off due to a difference in thermal expansion coefficients between the light-emitting structure (120) and the plurality of layers (for example, due to a difference in thermal expansion coefficients between the substrate (170) and the semiconductor element). In response to this, the intermediate layer (190) can compensate for the step difference of the light-emitting structure (120) and prevent the phenomenon in which the electrode pad (166), etc., peels off due to the gap inside the bonding layer (160). As a result, the reliability of the semiconductor element (10C) can be improved.

In addition, in the third embodiment, the intermediate layer (190) may have a thickness (T2) equal to the length (h3) between the outermost portion (SE) and the bottom surface (BS). This allows compensation for the height difference and/or step coverage between the top surface and the bottom surface of the bonding layer (160). In addition, the occurrence of voids within the intermediate layer (190) is reduced, and as a result, the intermediate layer (190) can prevent the peeling phenomenon of the electrode pad (166).

In addition, the intermediate layer (190) may include a metal material, for example, Au, Rb, Ag, etc., but is not limited thereto, and may be composed of a material including an oxide or nitride, such as an insulating material or a dielectric material.

FIG. 11 is a plan view of a semiconductor device according to a fourth embodiment of the present invention, and FIG. 12 is a cross-sectional view of a semiconductor device according to the fourth embodiment of the present invention.

Referring to FIGS. 11 and 12, a semiconductor device (10D) according to the fourth embodiment may include a light-emitting structure (120) including a first conductive semiconductor layer (124), a second conductive semiconductor layer (127), and an active layer (126), a first electrode (142) electrically connected to the first conductive semiconductor layer (124), and a second electrode (146) electrically connected to the second conductive semiconductor layer (127). In addition, the semiconductor device (10D) according to the fourth embodiment may further include a first insulating layer (131), a second insulating layer (132), a first conductive layer (165), a second conductive layer (150), a cover layer (143), a bonding layer (160), and a conductive substrate (170).

The semiconductor device (10D) according to the fourth embodiment may be applied with the same contents as those of the light-emitting structure (120), the first electrode (142), the second electrode (146), the first insulating layer (131), the second insulating layer (132), the first conductive layer (165), the second conductive layer (150), the cover layer (143), the bonding layer (160), and the conductive substrate (170) described in the semiconductor device according to the first embodiment, except for the contents described below.

First, as shown in FIG. 4, the outermost part (SE) of the light-emitting structure (120) includes a first outermost part (S1) and a third outermost part (S3) facing each other, a second outermost part (S2) and a fourth outermost part (S4) facing each other, and a fifth outermost part (S5) facing the electrode pad, and the fifth outermost part (S5) may have a curvature corresponding to the shape of the electrode pad.

At this time, the second conductive layer (150) may include only a fifth extension portion (150e) extending outwardly of the fifth outermost portion (S5). That is, the second conductive layer (150) may extend outwardly from the light-emitting structure (120) only in the region closest to the electrode pad (166) on a plane, thereby forming an electrical connection with the electrode pad (166).

Accordingly, the second conductive layer (150) can be positioned inside the light-emitting structure (120) at the first outermost portion (S1), the second outermost portion (S2), the third outermost portion (S3), and the fourth outermost portion (S4) excluding the fifth outermost portion (S5). With this configuration, the second conductive layer (150) is not arranged to extend outward along the step portion (IS) of the light-emitting structure (120), but is arranged along the bottom surface (BS) of the light-emitting structure (120), so that the flatness can be increased. Accordingly, the occurrence of peeling during the LLO process can be improved, thereby improving the yield.

Additionally, the first conductive layer (165) may have its uppermost surface positioned above the upper surface of the second recess (129). Accordingly, even if the second conductive layer (150) is positioned below the second recess (129), light output from the active layer (126) in the active area (IA1) to the outside of the light-emitting structure (120) may be reflected by the first conductive layer (165) after transmitting through the first insulating layer (131) and the second insulating layer (132) and may move to the upper portion of the light-emitting structure (120). Accordingly, the light output of the semiconductor element may be improved.

FIGS. 13A to 13H are drawings for explaining a method for manufacturing a semiconductor device according to the first embodiment of the present invention.

FIGS. 13A to 13H are drawings for explaining a method for manufacturing a semiconductor device according to an embodiment of the present invention.

Referring to FIG. 13a, a first conductive semiconductor layer (124), an active layer (126), and a second conductive semiconductor layer (127) can be sequentially formed on a growth substrate (110). The growth substrate (110) can be formed of at least one of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, or Ge, but is not necessarily limited thereto.

The first conductive semiconductor layer (124), the active layer (126), and the second conductive semiconductor layer (127) can be formed using a method such as metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), molecular beam epitaxy (MBE), and hydride vapor phase epitaxy (HVPE), but are not limited thereto.

At this time, a first recess (128) and a second recess (129) formed up to a portion of the second conductive semiconductor layer (127), the active layer (126), and the first conductive semiconductor layer (124) can be formed. The first recess (128) can be formed in a plurality of hole types, and the second recess (129) can be formed in a line shape along the outer surface of the light-emitting structure (120).

Referring to FIG. 13b, a first insulating layer (131) can be formed on a light-emitting structure (120) in which a first recess (128) and a second recess (129) are formed. Since the first insulating layer (131) is formed relatively thickly, it can fill the interior of the first recess (128) and the second recess (129). At this time, the first recess (128) can form a separate through hole (TH1).

According to an embodiment, since the second recesses (129) arranged on the outside are all filled with the first insulating layer (131), the penetration of external moisture can be effectively prevented.

The first insulating layer (131) may be formed by selecting at least one from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , SixNy, SiOxNy, Al ₂ O ₃ , TiO ₂ , AlN, etc., but is not limited thereto. The first insulating layer (131) may be formed as a single layer or multiple layers.

Referring to Fig. 13c, a first electrode (142) can be formed inside the through hole of the first recess (128), and a second electrode (146) can be formed on the second conductive semiconductor layer (127). At this time, a cover layer (143) can be formed on the second electrode (146).

The first electrode 142, the second electrode 146, and the cover layer 143 are made of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), and indium aluminum zinc oxide (IAZO). , IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au , or Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, It may be formed containing at least one of Sn, In, Ru, Mg, Zn, Pt, Au, and Hf, but these materials It is not limited. For example, the first electrode (142) has multiple metal layers (e.g., Cr/Al/Ni), the second electrode (146) is ITO, and the cover layer (143) is Ni/Au. Can be.

Referring to FIG. 13d, a second conductive layer (150) can be formed on the first insulating layer (131). The second conductive layer (150) is made of a material having good adhesion to the first insulating layer (131), and can be made of at least one material selected from the group consisting of materials such as Cr, Ti, Ni, and Au, and an alloy thereof, and can be made of a single layer or multiple layers.

The second conductive layer (150) may have a step in an area vertically overlapping the second recess (129). However, since the first insulating layer (131) fills the second recess (129), the second conductive layer (150) disposed on the second recess (129) may not be inserted into the interior of the second recess (129). That is, the flatness of the second recess (129) may be improved.

Referring to FIG. 13e, the second insulating layer (132) may be formed on the second conductive layer (150). The second insulating layer (132) may extend into the interior of the first recess (128). The material of the second insulating layer (132) may be the same as that of the first insulating layer (131), but is not necessarily limited thereto.

Referring to FIG. 13f, a first conductive layer (165), a bonding layer (160), and a conductive substrate (170) can be sequentially laminated on a second insulating layer (132). The first conductive layer (165) can extend into the first recess (128) and be electrically connected to the first electrode (142). That is, the first conductive semiconductor layer (124) can be electrically connected to the conductive substrate (170) through the first electrode (142), the first conductive layer (165), and the bonding layer (160).

After laminating the conductive substrate (170), the growth substrate (110) can be removed. The method for removing the growth substrate (110) is not particularly limited, but as an example, it can be removed using the LLO (Laser Lift Off) process.

In this LLO process, if the second conductive layer (150) has a large step, the light-emitting structure (120) may be peeled off. However, according to an embodiment, the flatness of the second conductive layer (150) may be improved, thereby improving the peeling problem of the light-emitting structure (120).

And a passivation layer (180) can be placed on the upper surface and side surface of the light-emitting structure (120). As mentioned above, the passivation layer (180) can protect the element from external moisture or foreign substances, thereby improving the electrical and optical reliability of the element and reducing the stress applied to the semiconductor element.

Additionally, before placing the passivation layer (180), etching or the like may be performed to have an uneven structure on the upper surface of the light-emitting structure (120).

Referring to FIGS. 13g and 13h, after mesa etching between chips, the chips can be separated through a dicing process. In addition, electrode pads (166) can be formed through etching or the like.

FIG. 14 is a conceptual diagram of a semiconductor device package according to an embodiment of the present invention, and FIG. 15 is a plan view of a semiconductor device package according to an embodiment of the present invention.

Referring to FIG. 14, a semiconductor device package may include a body (2) in which a groove (3) is formed, a semiconductor device (10) disposed in the body (2), and a pair of lead frames (5a, 5b) disposed in the body (2) and electrically connected to the semiconductor device (10). The semiconductor device (10) may include all of the semiconductor devices (10A, 10B, 10C, 10D) described above.

The body (2) may include a material or coating layer that reflects ultraviolet light. The body (2) may be formed by laminating a plurality of layers (2a, 2b, 2c, 2d, 2e). The plurality of layers (2a, 2b, 2c, 2d, 2e) may be the same material or may include different materials.

The home (3) is formed to become wider as it gets farther away from the semiconductor element (10), and a step (3a) can be formed on the inclined surface.

Referring to Fig. 15, a semiconductor element (10) may be placed on a first lead frame (5a) and connected to a second lead frame (5b) by a wire. At this time, the first lead frame (5a) and the second lead frame (5b) may be placed to surround a side of the semiconductor element (10).

The light-transmitting layer (4) can cover the groove (3). The light-transmitting layer (4) may be made of glass, but is not necessarily limited thereto. The light-transmitting layer (4) is not particularly limited as long as it is a material that can effectively transmit ultraviolet light. The interior of the groove (3) may be an empty space.

The semiconductor device can be applied to various types of light source devices. For example, the light source device can be a concept including a sterilizing device, a curing device, a lighting device, and a display device and a vehicle lamp. That is, the semiconductor device can be applied to various electronic devices that are placed in a case and provide light.

The sterilizing device can sterilize a desired area by having a semiconductor element according to the embodiment. The sterilizing device can be applied to household appliances such as water purifiers, air conditioners, and refrigerators, but is not necessarily limited thereto. In other words, the sterilizing device can be applied to various products (e.g., medical devices) that require sterilization.

For example, the water purifier may be equipped with a sterilizing device according to an embodiment to sterilize circulating water. The sterilizing device may be placed at a nozzle or outlet through which water circulates and may irradiate ultraviolet rays. At this time, the sterilizing device may include a waterproof structure.

The curing device can cure various types of liquids by having semiconductor elements according to the embodiment. The liquid can be a concept that includes various materials that can be cured when irradiated with ultraviolet rays. For example, the curing device can cure various types of resins. Alternatively, the curing device can be applied to cure cosmetic products such as nail polish.

The lighting device may include a light source module including a substrate and a semiconductor element of the embodiment, a heat dissipation unit that dissipates heat from the light source module, and a power supply unit that processes or converts an electrical signal provided from the outside and provides the signal to the light source module. In addition, the lighting device may include a lamp, a head lamp, or a streetlight.

The display device may include a bottom cover, a reflector, a light-emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter. The bottom cover, the reflector, the light-emitting module, the light guide plate, and the optical sheet may constitute a backlight unit.

A reflector is arranged on the bottom cover, and a light-emitting module can emit light. A light guide plate is arranged in front of the reflector to guide light emitted from the light-emitting module forward, and an optical sheet may include a prism sheet or the like and may be arranged in front of the light guide plate. A display panel is arranged in front of the optical sheet, an image signal output circuit supplies an image signal to the display panel, and a color filter may be arranged in front of the display panel.

Although the above has been described with reference to examples, these are merely examples and do not limit the present invention. Those skilled in the art will appreciate that various modifications and applications not exemplified above are possible without departing from the essential characteristics of the present invention. For example, each component specifically shown in the examples can be modified and implemented. In addition, differences related to such modifications and applications should be interpreted as being included in the scope of the present invention defined in the appended claims.

Claims (8)

challenging substrate;
A light-emitting structure comprising a first conductive semiconductor layer; a second conductive semiconductor layer; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; and
An insulating layer including a protrusion penetrating a portion of the second conductive semiconductor layer, the active layer, and a portion of the first conductive semiconductor layer;
The above protrusion is,
At least one first protrusion having a through hole therein; and
a second protrusion extending along an outer surface of the light-emitting structure, surrounding at least one first protrusion;
The above active layer is separated into an active region and an inactive region surrounding the active region by the second protrusion,
The above light-emitting structure is arranged on the conductive substrate and includes a step portion located between the outermost portion and the bottom surface,
A semiconductor device in which the second conductive semiconductor layer is disposed between the active layer and the conductive substrate.
In the first paragraph,
A semiconductor device wherein the length between the lower surface and the outermost portion is different from the length between the lower surface and the upper surface of the second protrusion.
In the first paragraph,
A semiconductor device wherein the length between the lower surface and the outermost portion is greater than the length between the lower surface and the upper surface of the second protrusion.
In the first paragraph,
The above-mentioned step portion is a semiconductor element surrounding the second protrusion portion.
In the first paragraph,
A semiconductor device wherein the length between the lower surface and the outermost portion is the same as the length between the lower surface and the upper surface of the second protrusion.
In the first paragraph,
A semiconductor device further comprising an electrode pad spaced apart from the light-emitting structure on the conductive substrate.
In Article 6,
A first conductive layer electrically connected to the first conductive semiconductor layer; and
Further comprising a second conductive layer electrically connected to the second conductive semiconductor layer;
The first conductive layer is electrically connected to the first conductive semiconductor layer through the through hole of the first protrusion,
The second conductive layer is a semiconductor element that overlaps the second protrusion and the step in a vertical direction.
In the first paragraph,
A semiconductor device in which the length between the upper surface of the light-emitting structure and the outermost portion is greater than or equal to the length between the lower surface and the upper surface of the second protrusion.

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